WO2017011156A1 - Process for removing contamination on ruthenium surface - Google Patents

Process for removing contamination on ruthenium surface Download PDF

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Publication number
WO2017011156A1
WO2017011156A1 PCT/US2016/038551 US2016038551W WO2017011156A1 WO 2017011156 A1 WO2017011156 A1 WO 2017011156A1 US 2016038551 W US2016038551 W US 2016038551W WO 2017011156 A1 WO2017011156 A1 WO 2017011156A1
Authority
WO
WIPO (PCT)
Prior art keywords
photomask
euvl
oxidizing
subjecting
reducing environment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2016/038551
Other languages
French (fr)
Inventor
Jerry Dustin Leonhard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR1020247029045A priority Critical patent/KR20240133789A/en
Priority to KR1020187004321A priority patent/KR20180019763A/en
Publication of WO2017011156A1 publication Critical patent/WO2017011156A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/16—Metals

Definitions

  • EUVL extreme ultra-violet lithography
  • EUVL lithography reflection photomask In extreme ultra-violet lithography (EUVL), an EUVL lithography reflection photomask in used.
  • EUVL photomasks In contrast with a conventional lithography transmission photomask (compare FIGURES 5A and 5B), EUVL photomasks use a multi-layer stack to maximize reflective power of the short (13.5 nm) wavelength projecting a pattern onto the workpiece.
  • the EUVL photomask is periodically cleaned to remove surface contamination. Aggressive cleaning can damage the surface and shorten the lifetime of the mask. However, insufficient cleaning can allow contamination to build and decrease the reflectivity in the EUVL photomask.
  • a method for pretreating an EUVL photomask having an exposed ruthenium surface includes subjecting the photomask to surface treatment in an oxidizing and reducing environment.
  • a method for cleaning an EUVL photomask having an exposed ruthenium surface includes subjecting the photomask to surface treatment in an oxidizing and reducing environment, and cleaning the photomask with a cleaning solution.
  • subjecting the photomask to an oxidizing and reducing environment may include treatment with water vapor plasma.
  • subjecting the photomask to an oxidizing and reducing environment may include treatment with hydroxyl OH* and hydrogen radicals H*.
  • the surface treatment may oxidize carbon on the surface on the photomask.
  • the surface treatment may reduce the exposed ruthenium layer.
  • the cleaning solution may include ammonium hydroxide, hydrogen peroxide, and deionized water.
  • FIGURE 1 is an exemplary EUVL reflection photomask blank including multiple layers of different materials, in accordance with embodiments of the present disclosure
  • FIGURE 2 is a fabricated EUVL reflection photomask showing exposed capping layer, in accordance with embodiments of the present disclosure
  • FIGURE 3 is a comparative graph showing Ru composition and oxidative state of the capping layer on the EUVL photomask of FIGURE 2, as deposited, post carbon removal, and post clean using a previously developed carbon removal technology;
  • FIGURE 4 is a comparative graph showing Ru composition and oxidative state of the capping layer on the EUVL photomask of FIGURE 2, as deposited, post carbon removal, and post clean in accordance with embodiments of the present disclosure;
  • FIGURE 5A is a previously developed conventional lithography transmission photomask showing absorption
  • FIGURE 5B is an EUVL reflection photomask showing reflection.
  • the present disclosure relates to methods for cleaning extreme ultra-violet lithography (EUVL) photomasks.
  • EUVL extreme ultra-violet lithography
  • EUVL photomasks are reflection photomasks.
  • an exemplary EUVL reflection photomask 20 may include multiple layers of different materials. The layers include a backside coating layer 22, a substrate 24, a Bragg reflector 26 including multiple layers, a capping layer 28, an absorber layer 30, an anti -reflective coating layer 32, and a photoresist layer 34.
  • the capping layer 28 when fabricated, the capping layer 28 may be exposed on the EUVL photomask.
  • Ruthenium is typically used as the capping layer 28.
  • the ruthenium capping layer has a thickness of 2.5 nm.
  • One drawback of a ruthenium capping layer is its tendency to oxidize quickly.
  • the most common contamination on an EUVL photomask is carbon.
  • the carbon layer grows on the exposed surface of the mask as it is exposed to air over time.
  • other process-induced contaminations on mask surfaces may include residual photoresist, metalorganic compounds, and sub -micrometer particles during patterning.
  • the most common way to remove carbon from the surface is to oxidize the surface. However, such oxidation for carbon removal also oxidizes the ruthenium capping surface of the EUVL photomask to the various oxidative states of Ru0 2 , Ru0 3 , and Ru0 4 .
  • the EUVL photomask is pre-treated in a reducing and oxidizing environment prior to cleaning.
  • Such treatment has the effect of oxidizing carbon on the surface of the EUVL photomask, while reducing the ruthenium surface to maintain lower oxidative states on the ruthenium surface.
  • the EUVL photomask is pre-treated using a water vapor plasma prior to cleaning.
  • the treatment uses OH* and H* radicals to produce both a reducing and oxidizing environment.
  • the oxidizing nature of the plasma removes the carbon contamination, while the competing reducing reaction maintains the ruthenium layer oxidative state.
  • the ruthenium material oxidative state of Ru03 remains the same after carbon removal.
  • the EUVL photomask can be cleaned using an SCI cleaning solution, which may include ammonium hydroxide, hydrogen peroxide, and de-ionized water.
  • SCI cleaning solution may include ammonium hydroxide, hydrogen peroxide, and de-ionized water.
  • Other cleaning solutions are also within the scope of the present disclosure.
  • oxide reduction can be achieved at a lower temperature using water plasma to reduce the metal oxide and also remove carbon from the seed layer surface.
  • the hydrogen plasma includes H* radicals that can be used to uniformly reduce oxides and clean the seed layer surface in the feature.
  • An exemplary EUVL reflection photomask includes 106 layers of eight different materials.
  • the layers include a backside coating having a thickness of about 70 nm, a substrate having a thickness of about 6.35 mm, a Bragg reflector multilayer having 100 layers and a total thickness of about 275nm, a capping layer of about 2.5 nm, a bulk absorber having a thickness of about 55 nm, an anti -reflective coating layer having a thickness of about 15 nm, and a photoresist layer having a thickness of about 100 nm.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

A method for pretreating an EUVL photomask having an exposed ruthenium surface includes subjecting the photomask to surface treatment in an oxidizing and reducing environment. Another method for pretreating an EUVL photomask having an exposed ruthenium surface includes subjecting the photomask to surface treatment in an oxidizing and reducing environment, and cleaning the photomask with a cleaning solution.

Description

PROCESS FOR REMOVING CONTAMINATION
ON RUTHENIUM SURFACE
BACKGROUND
In extreme ultra-violet lithography (EUVL), an EUVL lithography reflection photomask in used. In contrast with a conventional lithography transmission photomask (compare FIGURES 5A and 5B), EUVL photomasks use a multi-layer stack to maximize reflective power of the short (13.5 nm) wavelength projecting a pattern onto the workpiece.
To maintain the highest level of reflectivity, the EUVL photomask is periodically cleaned to remove surface contamination. Aggressive cleaning can damage the surface and shorten the lifetime of the mask. However, insufficient cleaning can allow contamination to build and decrease the reflectivity in the EUVL photomask.
Therefore, there exists a need for an improved process for cleaning an EUVL photomask to optimize the lifetime of the mask.
SUMMARY
This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This summary is not intended to identify key features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
In accordance with one embodiment of the present disclosure, a method for pretreating an EUVL photomask having an exposed ruthenium surface is provided. The method includes subjecting the photomask to surface treatment in an oxidizing and reducing environment.
In accordance with another embodiment of the present disclosure, a method for cleaning an EUVL photomask having an exposed ruthenium surface is provided. The method includes subjecting the photomask to surface treatment in an oxidizing and reducing environment, and cleaning the photomask with a cleaning solution.
In any of the embodiments described herein, subjecting the photomask to an oxidizing and reducing environment may include treatment with water vapor plasma.
In any of the embodiments described herein, subjecting the photomask to an oxidizing and reducing environment may include treatment with hydroxyl OH* and hydrogen radicals H*. In any of the embodiments described herein, the surface treatment may oxidize carbon on the surface on the photomask.
In any of the embodiments described herein, the surface treatment may reduce the exposed ruthenium layer.
In any of the embodiments described herein, the cleaning solution may include ammonium hydroxide, hydrogen peroxide, and deionized water.
DESCRIPTION OF THE DRAWINGS
The foregoing aspects and many of the attendant advantages of this disclosure will become more readily appreciated by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:
FIGURE 1 is an exemplary EUVL reflection photomask blank including multiple layers of different materials, in accordance with embodiments of the present disclosure;
FIGURE 2 is a fabricated EUVL reflection photomask showing exposed capping layer, in accordance with embodiments of the present disclosure;
FIGURE 3 is a comparative graph showing Ru composition and oxidative state of the capping layer on the EUVL photomask of FIGURE 2, as deposited, post carbon removal, and post clean using a previously developed carbon removal technology;
FIGURE 4 is a comparative graph showing Ru composition and oxidative state of the capping layer on the EUVL photomask of FIGURE 2, as deposited, post carbon removal, and post clean in accordance with embodiments of the present disclosure;
FIGURE 5A is a previously developed conventional lithography transmission photomask showing absorption; and
FIGURE 5B is an EUVL reflection photomask showing reflection.
DETAILED DESCRIPTION
The present disclosure relates to methods for cleaning extreme ultra-violet lithography (EUVL) photomasks.
In contrast with convention lithography transmission photomasks, EUVL photomasks are reflection photomasks. Referring to FIGURE 1, an exemplary EUVL reflection photomask 20 may include multiple layers of different materials. The layers include a backside coating layer 22, a substrate 24, a Bragg reflector 26 including multiple layers, a capping layer 28, an absorber layer 30, an anti -reflective coating layer 32, and a photoresist layer 34. Referring to FIGURE 2, when fabricated, the capping layer 28 may be exposed on the EUVL photomask. Ruthenium is typically used as the capping layer 28. In one non-limiting example, the ruthenium capping layer has a thickness of 2.5 nm. One drawback of a ruthenium capping layer, is its tendency to oxidize quickly.
The most common contamination on an EUVL photomask is carbon. The carbon layer grows on the exposed surface of the mask as it is exposed to air over time. In addition, other process-induced contaminations on mask surfaces may include residual photoresist, metalorganic compounds, and sub -micrometer particles during patterning. The most common way to remove carbon from the surface is to oxidize the surface. However, such oxidation for carbon removal also oxidizes the ruthenium capping surface of the EUVL photomask to the various oxidative states of Ru02, Ru03, and Ru04.
The higher oxidative states of ruthenium have higher etch rates in conventional mask cleaning chemistry causing loss of the total ruthenium thickness and reducing the lifespan of the EUVL photomask. As can be seen in FIGURE 3, Ru04 material is lost from the capping layer during the clean. The formation of oxides and increase in surface roughness as a result to material loss can negatively impact the reflectivity of the ruthenium capping layer.
In accordance with one embodiment of the present disclosure, the EUVL photomask is pre-treated in a reducing and oxidizing environment prior to cleaning. Such treatment has the effect of oxidizing carbon on the surface of the EUVL photomask, while reducing the ruthenium surface to maintain lower oxidative states on the ruthenium surface.
In one embodiment of the present disclosure, the EUVL photomask is pre-treated using a water vapor plasma prior to cleaning. The treatment uses OH* and H* radicals to produce both a reducing and oxidizing environment. The oxidizing nature of the plasma removes the carbon contamination, while the competing reducing reaction maintains the ruthenium layer oxidative state. As can be seen in FIGURE 4, the ruthenium material oxidative state of Ru03 remains the same after carbon removal.
After such treatment, the EUVL photomask can be cleaned using an SCI cleaning solution, which may include ammonium hydroxide, hydrogen peroxide, and de-ionized water. Other cleaning solutions are also within the scope of the present disclosure.
In accordance with embodiments of the present disclosure, oxide reduction can be achieved at a lower temperature using water plasma to reduce the metal oxide and also remove carbon from the seed layer surface. The hydrogen plasma includes H* radicals that can be used to uniformly reduce oxides and clean the seed layer surface in the feature.
EXAMPLE
An exemplary EUVL reflection photomask includes 106 layers of eight different materials. The layers include a backside coating having a thickness of about 70 nm, a substrate having a thickness of about 6.35 mm, a Bragg reflector multilayer having 100 layers and a total thickness of about 275nm, a capping layer of about 2.5 nm, a bulk absorber having a thickness of about 55 nm, an anti -reflective coating layer having a thickness of about 15 nm, and a photoresist layer having a thickness of about 100 nm.
While illustrative embodiments have been illustrated and described, it will be appreciated that various changes can be made therein without departing from the spirit and scope of the disclosure.

Claims

CLAIMS The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:
1. A method for pretreating an EUVL photomask having an exposed ruthenium surface, the method comprising:
subjecting the photomask to surface treatment in an oxidizing and reducing environment.
2. The method of Claim 1, wherein subjecting the photomask to an oxidizing and reducing environment includes treatment with water vapor plasma.
3. The method of Claim 1, wherein subjecting the photomask to an oxidizing and reducing environment includes treatment with hydroxyl OH* and hydrogen radicals H*.
4. The method of Claim 1, wherein the surface treatment oxidizes carbon on the surface on the photomask.
5. The method of Claim 1, wherein the surface treatment reduces the exposed ruthenium layer.
6. A method for cleaning an EUVL photomask having an exposed ruthenium surface, the method comprising:
(a) subjecting the photomask to surface treatment in an oxidizing and reducing environment; and
(b) cleaning the photomask with a cleaning solution.
7. The method of Claim 6, wherein subjecting the photomask to an oxidizing and reducing environment includes treatment with water vapor plasma.
8. The method of Claim 6, wherein subjecting the photomask to an oxidizing and reducing environment includes treatment with hydroxyl OH* and hydrogen radicals H*.
9. The method of Claim 6, wherein the surface treatment oxidizes carbon on the surface on the photomask.
10. The method of Claim 6, wherein the surface treatment reduces the exposed ruthenium layer.
11. The method of Claim 6, wherein the cleaning solution includes ammonium hydroxide, hydrogen peroxide, and deionized water.
PCT/US2016/038551 2015-07-13 2016-06-21 Process for removing contamination on ruthenium surface Ceased WO2017011156A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020247029045A KR20240133789A (en) 2015-07-13 2016-06-21 Process for removing contamination on ruthenium surface
KR1020187004321A KR20180019763A (en) 2015-07-13 2016-06-21 Process for decontamination on ruthenium surface

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/798,311 US20170017146A1 (en) 2015-07-13 2015-07-13 Process for removing contamination on ruthenium surface
US14/798,311 2015-07-13

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WO2017011156A1 true WO2017011156A1 (en) 2017-01-19

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US (1) US20170017146A1 (en)
KR (2) KR20180019763A (en)
CN (1) CN106353968B (en)
TW (1) TW201704857A (en)
WO (1) WO2017011156A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112368638A (en) * 2018-07-05 2021-02-12 应用材料公司 Photomask protection film residual glue removal
US11360384B2 (en) * 2018-09-28 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating and servicing a photomask
US20250157800A1 (en) * 2023-11-09 2025-05-15 Applied Materials, Inc. Oxidation-Reduction Adjustable Plasma

Citations (5)

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US20070054497A1 (en) * 2003-05-09 2007-03-08 Markus Weiss Method for preventing contamination and lithographic device
US20080241711A1 (en) * 2007-03-30 2008-10-02 Yun Henry K Removal and prevention of photo-induced defects on photomasks used in photolithography
US20090061327A1 (en) * 2007-08-31 2009-03-05 Archita Sengupta Removal of ionic residues or oxides and prevention of photo-induced defects, ionic crystal or oxide growth on photolithographic surfaces
US7598503B2 (en) * 2005-06-13 2009-10-06 Asml Netherlands B.V. Lithographic apparatus and cleaning method therefor
US20150107617A1 (en) * 2013-10-17 2015-04-23 Samsung Electronics Co., Ltd. Method of cleaning photomask

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US7140374B2 (en) * 2003-03-14 2006-11-28 Lam Research Corporation System, method and apparatus for self-cleaning dry etch
US6998202B2 (en) * 2003-07-31 2006-02-14 Intel Corporation Multilayer reflective extreme ultraviolet lithography mask blanks
US7473908B2 (en) * 2006-07-14 2009-01-06 Asml Netherlands B.V. Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface
KR20130111524A (en) * 2010-07-27 2013-10-10 아사히 가라스 가부시키가이샤 Substrate provided with reflecting layer for euv lithography, and reflective mask blank for euv lithography

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054497A1 (en) * 2003-05-09 2007-03-08 Markus Weiss Method for preventing contamination and lithographic device
US7598503B2 (en) * 2005-06-13 2009-10-06 Asml Netherlands B.V. Lithographic apparatus and cleaning method therefor
US20080241711A1 (en) * 2007-03-30 2008-10-02 Yun Henry K Removal and prevention of photo-induced defects on photomasks used in photolithography
US20090061327A1 (en) * 2007-08-31 2009-03-05 Archita Sengupta Removal of ionic residues or oxides and prevention of photo-induced defects, ionic crystal or oxide growth on photolithographic surfaces
US20150107617A1 (en) * 2013-10-17 2015-04-23 Samsung Electronics Co., Ltd. Method of cleaning photomask

Also Published As

Publication number Publication date
US20170017146A1 (en) 2017-01-19
CN106353968A (en) 2017-01-25
TW201704857A (en) 2017-02-01
CN106353968B (en) 2021-10-22
KR20180019763A (en) 2018-02-26
KR20240133789A (en) 2024-09-04

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