WO2017004242A1 - Dispositif de détection de température et son procédé de fabrication - Google Patents

Dispositif de détection de température et son procédé de fabrication Download PDF

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Publication number
WO2017004242A1
WO2017004242A1 PCT/US2016/040155 US2016040155W WO2017004242A1 WO 2017004242 A1 WO2017004242 A1 WO 2017004242A1 US 2016040155 W US2016040155 W US 2016040155W WO 2017004242 A1 WO2017004242 A1 WO 2017004242A1
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WO
WIPO (PCT)
Prior art keywords
resistance
trace
thin film
temperature
temperature sensing
Prior art date
Application number
PCT/US2016/040155
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English (en)
Inventor
Brent Donald Alfred ELLIOT
Dennis G. Rex
Gunnar WETLESEN
Original Assignee
Component Re-Engineering Company, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Component Re-Engineering Company, Inc. filed Critical Component Re-Engineering Company, Inc.
Publication of WO2017004242A1 publication Critical patent/WO2017004242A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Definitions

  • the present invention relates to a temperature sensing device, and more particularly to a temperature sensing wafer.
  • Substrate temperature is often a critical variable in successful processing, especially in the processing of semiconductor wafers. Temperature monitoring, and calibration of processing equipment, may be critical to run processes with exacting requirements. Also, when a wafer process is not providing the desired results, it may be important to be assess the temperatures a wafer is achieving while being run on a heater, electrostatic chuck, or other similar device.
  • thermocouple wafers are silicon substrates, appropriately sized to match the substrates to be processed, with thermocouples embedded in the silicon wafer.
  • the thermocouples are connected to a data processing machine, and the temperature of the wafer in the various locations of the thermocouples can be recorded during simulated processing.
  • TC wafers have a number of limitations which significantly impact their performance:
  • TC wafers cannot be operated in conjunction with plasma. Many thin film processes utilize plasma, and in these cases, the plasma can also affect the substrate temperature. Thermocouples utilize a very low voltage DC signal correlated with the TC temperature. This signal is so affected by plasma that it is unusable, making TC wafers applicable only in non-plasma environments.
  • TC wafers have high cost, and short lifetimes.
  • the manufacturing processes utilized for TC wafers are largely manual, and therefor labor intensive. Yields are low, requiring substantial rework. Wiring connections are fragile, allowing many opportunities for damage. And thermocouples themselves are made of metals which are subject to oxidation at elevated temperatures, thereby inducing a built-in mechanism for end-of-life. Typical lifetimes for a TC wafer in production use is on the order of one year.
  • TC wafers have limited numbers of sensing locations.
  • the maximum number of sensors currently available on 300mm TC wafers is 34. It is not uncommon for hundreds of individual chips to be manufactured on a 300mm wafer. With only 34 temperature sensing locations, correlation between actual temperature data measured by TC wafers, and processing results is significantly limited.
  • FIG. 1 is a view of a temperature sensing device according to some embodiments of the present invention.
  • FIG. 2 is a view of a TCR-based temperature sensor according to some embodiments.
  • FIG. 3 is a view of an embodiment of the TCR-based temperature sensor of FIG. 2 with certain dimensions noted thereon.
  • FIG. 4 is a view of a TCR-based temperature sensor according to some embodiments.
  • FIG. 5 is a view of an embodiment of the TCR-based temperature sensor of FIG. 4 with certain dimensions noted thereon.
  • FIG. 6 is a view of a TCR-based temperature sensor according to some embodiments.
  • FIG. 7 is a view of an embodiment of the TCR-based temperature sensor of FIG. 6 with certain dimensions noted thereon. Detailed Description
  • a temperature sensing wafer or device which allows for a large number of sensing positions on a single substrate.
  • the sensing positions which in one embodiment can be temperature sensors, may be put onto a silicon wafer and may be of a high temperature coefficient material. Changes in resistance of the sensing positions or temperature sensors allow for determination of temperatures for the sensing positions or temperature sensors.
  • a temperature-testing wafer or device with a plurality of temperatures thereon is provided.
  • the wafer can be of any suitable size and shape, for example the size and shape of a wafer to be processed in a semiconductor processing chamber.
  • the temperature-testing wafer can be utilized to measure the temperature of a variety of locations on the top surface of a pedestal of a heater or electrostatic chuck provided in the chamber. In one embodiment, such temperature measurements can be used to characterize or calibrate a heater.
  • At least one temperature sensor and in one embodiment a plurality of temperature sensors, can be provided on the temperature-testing wafer. When a plurality of temperature sensors are utilized, they can be arranged in any suitable pattern on the wafer. In one embodiment, such pattern can correspond in some manner to the heating elements provided in the heater pedestal. In one embodiment, a plurality of temperature sensors are spaced across the entire surface of the temperature-sensing wafer. In one embodiment, a plurality of temperature sensors are evenly spaced across the entire surface of the temperature-sensing wafer. In one embodiment, a plurality of temperature sensors are spaced across the entire surface of the temperature sensing wafer to facilitate temperature readings across the entire surface of the pedestal.
  • one or more temperature sensors are provided on the top surface of the wafer, but is appreciated that the one or more temperature sensors can be provided on the bottom of the wafer or any combination of sensors on the top and bottom surface of the wafer.
  • Each of the temperature sensors can be of any suitable type, and in one embodiment each of the temperature sensors is formed from a thin film resistive trace provided on the surface of the wafer.
  • Each of the traces can be formed in any suitable pattern.
  • the thin film resistive trace of each sensor is identical.
  • a plurality of patterns of traces can be provided for the plurality of sensors.
  • each of the sensors can be formed from a distinct trace.
  • a plurality of patterns can be provided and one or more sensors can be formed from one of such plurality of patterns of traces.
  • each of the traces is formed from any suitable oxidation resistant material, and in one embodiment each of the traces is formed from the same oxidation resistant material.
  • oxidation resistant material means a metallic material that resists chemical degradation caused by the action of air or other gaseous mediums utilized in semiconductor processing chambers.
  • oxidation resistant materials include
  • molybdenum molybdenum, tungsten, silicon-germanium and manganite-silver.
  • a temperature sensing wafer or device 11 is provided.
  • the wafer or device 11 includes a wafer 12 be formed from any suitable material.
  • the wafer 12 of device 11 is formed from silicon.
  • the wafer 12 can be circular in shape and provided with opposite top and bottom surfaces 13.
  • each of the surfaces 13 is planar.
  • the large gray circle represents a 300mm silicon wafer, a typical substrate used for temperature sensing devices.
  • One or more temperature sensors 16 can be provided on one or both of surfaces 13 as discussed above. In one embodiment, a plurality of temperature sensors 16 are provided on the top surface 13 of the wafer 12.
  • the plurality of temperature sensors can be arranged on surface 13 in any suitable partem or configuration.
  • FIG. 1 for simplicity only a four temperature sensors 16 of a pattern are illustrated on wafer 12, it being appreciated that device 11 illustrated in FIG. 1 includes additional temperature sensors 16 on top surface 13 in such pattern of temperature sensors.
  • Each of the temperature sensors 16 can be formed from a thin film resistive trace 17 deposited or otherwise formed on surface 13 in any suitable manner.
  • each trace 17 can be formed in a pattern 18.
  • each trace 17 is formed from the same pattern 18, although the pattem 18 of each trace 17 on wafer 12 can be different or one or more traces 17 can be formed form the same pattern 18.
  • FIG. 1 each trace 17 is formed from the same pattern 18, although the pattem 18 of each trace 17 on wafer 12 can be different or one or more traces 17 can be formed form the same pattern 18.
  • FIG. 1 each trace 17 is formed from the same pattern 18, although the pattem 18 of each trace 17 on wafer 12 can be different or one or more traces 17 can be formed form the same pattern 18.
  • the black spirals of each trace 17 represent circuits of any suitable oxidation resistant material.
  • the oxidation-resistant material is a high TCR, oxidation-resistant material, such as molybdenum, tungsten, silicon-germanium or manganite-silver.
  • oxidation-resistant material such as molybdenum, tungsten, silicon-germanium or manganite-silver.
  • four such circuits are shown, but is can be seen that many of these circuits can be applied. With standard sputtering or electrochemical plating methods, it is possible to apply hundreds of such circuits, which would be sufficient for most applications, and lower cost than utilizing CVD and etch processes such as those used in semiconductor manufacturing.
  • the lines 21 connected to each end of the black spiral trace 17 at the top of the wafer represent sample electrical connections to the temperature sensing circuit of the temperature sensor 16.
  • Soldering pads (not shown in FIG. 1) may be applied to each end of the temperature sensing circuits or pattern 18, and wires could be directly soldered to those pads.
  • connecting traces of near-zero TCR materials such as NiCr or AgPt
  • connecting traces of copper may be used in conjunction with resistive trace elements of higher resistance.
  • copper traces are used to route connection to the temperature sensors 18.
  • a multi-layer trace approach may be used to create a
  • temperature sensing wafer with a plurality of high TCR temperature sensing circuits interconnected with a plurality of copper traces.
  • FIGS. 2-7 illustrate other sample patterns which may be used for the temperature sensors 18 of device 1 1 to provide temperature sensing in accord with the above descriptions.
  • the temperature sensing circuits need not be spiral in shape, many different shapes could be utilized, as seen in FIGS. 2-7.
  • temperature sensor 31 illustrated in FIGS. 2-3 is formed from a thin film resistive trace 32 having a zig-zag or serpentine shape or pattem 33.
  • the circuit 36 provided by trace 32 has first and second ends 37, 38 provided with respective soldering pads 41, 42 thereon for permitting connections to the circuit 36.
  • Sample dimensions of one embodiment of the trace 32 and pattern 33 are provided in FIG. 3.
  • Sample temperature sensor 71 illustrated in FIGS. 6-7 is similar in shape to temperature sensor 31 and is formed from a thin film resistive trace 72 having a zig-zag or serpentine shape or pattern 73.
  • the circuit 76 provided by trace 72 has first and second ends 77, 78 provided with respective soldering pads 81, 82 thereon for permitting connections to the circuit 76.
  • Soldering or connection pads 81, 82 extend outside the profile of pattern 73 to facilitate electrical connection to the pads 81, 82 and thus sensor 71. Sample dimensions of one embodiment of the trace 72 and pattern 73 are provided in FIG. 7.
  • TCR Thermal Coefficient of Resistance
  • This property is defined as the change in electrical resistance as a function of temperature for any given material, including for the oxidation resistant materials of the invention. If the TCR of a given material is high enough, then it is possible to utilize the electrical resistance change in said material as a measurement of temperature. Measurement of the resistance of the subject material at a first temperature, and then a second temperature, and correlating the resistance measurements to those temperatures provides an accurate, repeatable method for utilizing electrical resistance measurements to determine temperature.
  • Utilizing electrical resistance measurements correlated to temperature provides the ability to operate in a plasma environment. Electrical resistance measurements can be done with signals strong enough to filter out the electrical noise induced by plasma which drowns thermocouple signals. There are many materials with TCR values high enough for practical use of resistance levels correlated with temperature. Many of those materials are oxidation resistant, particularly at elevated temperatures, eliminating the oxidation issue inherent with thermocouples. Such materials include the oxidation resistant materials of the invention. [0026] Small circuits of a suitable material can easily be deposited onto a temperature measuring substrate utilizing methods such as sputtering or electrochemical plating among others, allowing for the use of hundreds or thousands of sensing locations on a 300mm wafer. Such circuits can be formed from thin film resistive traces, and can form the temperature sensors of the invention.
  • connection circuitry for example the connection leads to the temperature sensors of the invention, between the deposited patterns and the measurement instrumentation.
  • the connection circuitry will have some resistance that requires its subtraction from the measured values. Also, the connection circuitry will have its own TCR value(s) that similarly require compensation when deriving the pattern temperature(s).
  • connection material(s) that have very linear TCRs in the temperature range of interest.
  • Linear connection TCRs allow a simple numerical correction to the measured values in a way the same as the required correction for the baseline connection resistance. In other words, we subtract R + AR of the connection material. This is much easier if the AR component is linear. If it is not linear, then the TCR curve must be incorporated as a nonlinear equation or as a "lookup table" to allow correct compensation.
  • connection material(s) that have sufficiently small TCRs to be ignored. There are some candidates, as we shall see.
  • molybdenum is used as the material for the temperature sensor.
  • tungsten in used as the material for the temperature sensor.
  • Molybdenum may be used as an exemplary material for the temperature
  • L and A are fixed, and so the resistance of the partem is directly proportional to the material resistivity.
  • connection materials include Constantan (aka Ferry Alloy, 55% Ni, 55% Cu), Manganin (CuMnNi), and Evanohm R and S alloys (NiCrAlCuMnSi), among others.
  • Molybdenum has a TCR of .004579 or a bit more than 100X that of Ferry. Although that provides the sought 1%, another decade of relative resistance between the measurement pattern resistance and the connection resistance is desired/needed.
  • temperature measurement patterned sensor which has a resistance that is significantly higher than that of the connection wires, or connection traces.
  • temperature measurement patterned sensors are used which have resistances on the order of two (or more) orders of magnitude higher than that of the connection wire resistances for that circuit.
  • the patterned temperature measurement sensor is a thin film resistive element with a resistance of 2000 Ohms.
  • Copper lead traces may be used with a resistance of 25 Ohms.
  • the resistance change in the lead wires (or traces) over a 500C change in temperature would be 500 x 0.0039, which is approximately 2 ohms.
  • the resistive element resistance of 2000 Ohms the variation introduced by the copper leads is low enough that it would not interfere with a design of 0.5 degree accuracy, for example.
  • the resistance of the lead wires and connecting traces for each patterned temperature measurement sensor could be measured and then subtracted from the measured resistance value of the circuit, allowing for a more accurate temperature measurement based on the change in resistance of the high TCR thin film resistance element.
  • a temperature sensing wafer may be fabricated using known and achievable processes.
  • a temperature sensor is made with tungsten applied with a thin film deposition technique.
  • the thin film resistance of a 0.25 micron film of tungsten is approximately 4 x 10 _1 Q/sq. With such a resistance, for each 1000 Ohm of resistance a sensor trace length of approximately 2.5 cm is needed, such that a 10,000 Ohm trace would be 25 cm in length. With a 1 micron copper trace at each end of the resistive sensor trace of 300 mm (600 mm total), the resistance of the copper lead traces would be approximately 50 Ohms.
  • the resistance of the temperature sensor of the invention is at least 1000 Ohms. In some embodiments, the resistance of the temperature sensor of the invention is greater than 1000 Ohms. In some embodiments, the resistance of the
  • the temperature sensor is in the range of 1000 to 10,000 Ohms. In some embodiments, the resistance of the temperature sensor is in the range of 2000 to 6000 Ohms. In some embodiments, the temperature sensor is made from any suitable oxidation-resistant materials. In some embodiments, the temperature sensor comprises molybdenum. In some
  • the temperature sensor comprises tungsten.
  • the temperature sensor of the invention including those discussed in this paragraph, is referred to as a patterned temperature sensor.
  • a plurality of patterned temperature measurement sensors or temperature sensors are created of tungsten using a thin film deposition technique.
  • the thin film tungsten traces may have a resistance in the range of 1000 to 10000 Ohms.
  • a plurality of patterned temperature measurement sensors or temperature sensors are created of
  • the thin film molybdenum traces may have a resistance in the range of 1000 to 10000 Ohms.
  • the substrate can be a silicon wafer.
  • the wafer can have a size corresponding to the size of a conventional wafer used in mass semiconductor processing.
  • the oxidation resistant material can have a high temperature coefficient of resistivity.
  • the oxidation resistant material can be selected from the group consisting of molybdenum and tungsten.
  • Each thin film resistive trace can have a resistance between the first and second ends of at least 1000 ohms.
  • the resistance of the thin film resistive trace between first and second ends can be in the range of 1000 to 10000 ohms.
  • the temperature sensing device can include a first connection lead coupled to the first end of each thin film resistive trace and a second connection lead coupled to the second end of each thin film resistive trace.
  • Each thin film resistive trace can have a resistance and the respective first connection lead and the second connection lead of the trace can have a combined resistance that is less than 10% of the resistance of the trace.
  • Each thin film resistive trace can have a resistance and the respective first connection lead and the second connection lead of the trace can have a combined resistance that is less than 1% of the resistance of the trace.
  • Each of the first and second connection leads can be made of copper.
  • Each of the first and second connection leads can be a thin film deposited on the substrate.
  • Each thin film resistive trace can be a deposited thin film resistive trace having a thickness of less than one micron.
  • a method for manufacturing a temperature sensing device includes depositing a plurality of thin film resistive traces made from an oxidation resistant material on a substrate, each of the thin film resistive traces having first and second ends, depositing a first connection lead to the first end of each thin film resistive trace and depositing a second connection lead to the second end of each thin film resistive trace.
  • the substrate can be a silicon wafer.
  • the oxidation resistant material can be selected from the group consisting of molybdenum and tungsten.
  • Each thin film resistive trace can have a resistance between the first and second ends of at least 1000 ohms.
  • Each thin film resistive trace can have a resistance and the respective first connection lead and the second connection lead of the trace can have a combined resistance that is less than 10% of the resistance of the trace.
  • Each thin film resistive trace can have a resistance and the respective first connection lead and the second connection lead of the trace can have a combined resistance that is less than 1% of the resistance of the trace.
  • a temperature sensing wafer can include a substrate and a plurality of temperature sensing positions on said substrate, wherein each of said plurality of temperature sensing positions comprises a pattern of high temperature coefficient of resistivity material, said pattern of high temperature coefficient of resistivity material having a first end and a second end.
  • the high temperature coefficient of resistivity material can be molybdenum.
  • the high temperature coefficient of resistivity material can be tungsten.
  • the temperature sensing wafer can include a plurality of connection leads, wherein each of the plurality of temperature sensing positions has a first connection lead coupled to its first end and a second connection lead coupled to its second end.
  • the resistance of the molybdenum sensing position partem can be in the range of 1000 to 10000 ohms.
  • the resistance of the tungsten sensing position pattern can be in the range of 1000 to 10000 ohms.
  • the combined resistance of the first connection lead and the second connection lead can be less than 10% of the resistance of the molybdenum sensing position partem.
  • the combined resistance of the first connection lead and the second connection lead can be less than 1% of the resistance of the molybdenum sensing position pattern.
  • the combined resistance of the first connection lead and the second connection lead can be less than 10% of the resistance of the tungsten sensing position pattern.
  • the combined resistance of the first connection lead and the second connection lead can be less than 1% of the resistance of the tungsten sensing position partem.
  • the connection leads can be copper.
  • the molybdenum sensing position pattern can be deposited on said substrate to a thickness of less than one micron.
  • the connection leads can be copper traces deposited on said substrate.
  • the molybdenum sensing position pattern can be deposited on said substrate to a thickness of less than one micron.
  • the connection leads can be copper traces deposited on said substrate.
  • a method for manufacturing a temperature sensing wafer can include depositing a plurality of patterns of high temperature coefficient of resistivity material on a substrate, depositing a first connection lead to a first end of said patterns of high temperature coefficient of resistivity material and depositing a second connection lead to a second end of said patterns of high temperature coefficient of resistivity material.
  • the high temperature coefficient of resistivity material can be molybdenum.
  • the high temperature coefficient of resistivity material can be tungsten.
  • the combined resistance of the first connection lead and the second connection lead connected to a pattern of high temperature coefficient of resistivity material can be less than 10% of the resistance of the pattern.
  • the first connection lead and the second connection lead connected to a pattern of high temperature coefficient of resistivity material can be less than 1% of the resistance of the pattern.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

L'invention concerne un dispositif de détection de température destiné à être utilisé avec le traitement de semi-conducteurs. Le dispositif peut comprendre un substrat présentant une surface et une pluralité de capteurs de température formés sur la surface. La pluralité de capteurs de température peuvent être formés chacun à partir d'une piste résistive en couche mince faite d'un matériau résistant à l'oxydation. Chaque piste peut présenter des première et seconde extrémités pour permettre des première et seconde connexions électriques à la piste. Un procédé de fabrication du dispositif est également décrit.
PCT/US2016/040155 2015-06-29 2016-06-29 Dispositif de détection de température et son procédé de fabrication WO2017004242A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562186143P 2015-06-29 2015-06-29
US62/186,143 2015-06-29
US201615194563A 2016-06-28 2016-06-28
US15/194,563 2016-06-28

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WO2017004242A1 true WO2017004242A1 (fr) 2017-01-05

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Cited By (1)

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CN112414578A (zh) * 2019-08-23 2021-02-26 台湾积体电路制造股份有限公司 温度传感器、集成电路及确定集成电路操作的方法

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CN112414578A (zh) * 2019-08-23 2021-02-26 台湾积体电路制造股份有限公司 温度传感器、集成电路及确定集成电路操作的方法
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CN112414578B (zh) * 2019-08-23 2024-02-23 台湾积体电路制造股份有限公司 温度传感器、集成电路及确定集成电路操作的方法

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