WO2016201788A1 - Dispositif et procédé de détection de qualité d'imagerie multicanaux in situ pour aligneur de masque - Google Patents

Dispositif et procédé de détection de qualité d'imagerie multicanaux in situ pour aligneur de masque Download PDF

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Publication number
WO2016201788A1
WO2016201788A1 PCT/CN2015/088311 CN2015088311W WO2016201788A1 WO 2016201788 A1 WO2016201788 A1 WO 2016201788A1 CN 2015088311 W CN2015088311 W CN 2015088311W WO 2016201788 A1 WO2016201788 A1 WO 2016201788A1
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WO
WIPO (PCT)
Prior art keywords
grating
gratings
sensor
projection objective
image
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PCT/CN2015/088311
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English (en)
Chinese (zh)
Inventor
唐锋
李�杰
王向朝
冯鹏
徐世福
卢云君
Original Assignee
中国科学院上海光学精密机械研究所
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Publication of WO2016201788A1 publication Critical patent/WO2016201788A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Definitions

  • the invention relates to a lithography machine, in particular to a lithography machine in-situ multi-channel imaging quality detecting device and method.
  • the lithography machine is one of the core devices for the manufacture of very large scale integrated circuits.
  • the projection objective is one of the most important subsystems of the lithography machine.
  • the imaging quality of the projection objective is one of the key factors determining the quality of the lithographic line. As the lithographic node progresses below 1x nm resolution, a yield of 250 wph is required. The increase of the yield causes the thermal effect of the lithography mask and the thermal aberration of the projection objective, which affects the precision of the lithography machine and the imaging quality of the projection objective. It is required to be able to measure the distortion, curvature of field and wave aberration of the lithography system in real time.
  • the lithography machine uses different sensors to detect distortion, field curvature and wave aberration parameters.
  • the distortion and field curvature parameters are realized by the scanning of the aligning system of the lithography machine; the wave aberration is realized by the in-situ wave aberration sensor, and the full field wave aberration detection is realized by scanning.
  • ASML in the Netherlands reported a multi-channel image quality sensor (refer to prior art [1], Wim de Boeij, Remi Pieternella, et al., Extending immersion lithography down to 1x nm production nodes. Proc. of SPIE Vol.
  • wavefront detection result From the Z5 ⁇ Z37 Zernike coefficient to the Z2 ⁇ Z64 Zernike coefficient.
  • the in-situ imaging quality detection speed is an important factor affecting the productivity of the lithography machine. Increasing the in-situ imaging quality detection speed is also an important aspect of the improvement of the in-situ imaging quality detection sensor.
  • a lithography machine in-situ multi-channel imaging quality detecting device comprising: a light source of a lithography machine, an illumination system, a mask table, a projection objective lens, a workpiece table and a computer, characterized in that it further comprises a surface grating plate and a wave An aberration sensor; the object grating plate is placed on the mask table, the wave aberration sensor is placed on the workpiece table, and the wave aberration sensor is connected to the computer;
  • the object grating plate is composed of n sets of object gratings with a duty ratio of 50%; each set of surface gratings includes a first grating of the grating line along the y direction and a second grating of the grating line along the x direction, and the period is P oX ;
  • the wave aberration sensor includes an image grating plate, a small hole array and a two-dimensional photoelectric sensor which are sequentially placed along a beam propagation direction;
  • the image surface grating plate comprises n sets of image plane gratings with a duty ratio of 50%, and the period is P iX ;
  • the period P oX of the first grating and the second grating and the period P iX of the image plane grating satisfy the following relationship;
  • M is the imaging magnification of the projection objective (5) of the lithography machine
  • P iX is determined by the shear rate s X , the wavelength ⁇ of the source, and the numerical aperture NA of the projection objective of the lithography machine:
  • the spacing d o between each set of surface gratings on the object grating plate and the spacing d i between each image surface grating on the image grating plate satisfy the following relationship:
  • the spacing between the first grating and the second grating of each set of surface gratings on the object grating plate is equal, and the number of group gratings is equal to the number of image plane gratings, all of which are n, and the n is greater than 1. Natural number.
  • the first grating and the second grating are a one-dimensional reflective grating or a one-dimensional transmissive grating of a phase grating or an amplitude grating type.
  • the period of the aperture array is equal to the pixel period of the photoelectric two-dimensional sensor, and the aperture position of the aperture array is in one-to-one correspondence with the pixel position of the photoelectric two-dimensional sensor, and the photoelectric two-dimensional sensor pixel
  • the ratio of the size to the diameter of the aperture of the array of apertures is S.
  • the two-dimensional photosensor is a camera, CCD, CMOS image sensor, PEEM, or a two-dimensional photodetector array.
  • the image plane grating is a two-dimensional transmission grating of a phase grating or an amplitude grating type.
  • the detection method of the in-situ multi-channel imaging quality detecting device of the above lithography machine comprises the following steps:
  • the wave aberration sensor collects a shearing interferogram input to the computer, and the computer is obtained from the acquisition.
  • the x-direction shear phase information of the n field of view points is calculated in the interferogram;
  • phase shifting technology moving the workpiece table multiple times in the y direction. After each movement, the wave aberration sensor collects a shearing interferogram and inputs it into the computer, and the computer calculates from the acquired interferogram. Obtaining y-direction shear phase information of n field of view points;
  • the present invention has the following advantages:
  • the present invention introduces a small aperture array in a wavefront aberration sensor, and uses a small aperture array to increase the spatial resolution of the in-situ detection of imaging quality by S 2 times, thereby effectively reducing the pixels used by the two-dimensional photoelectric sensor of each channel. Number, the number of parallel detection channels is improved, and the parallel detection channel can increase S 2 times.
  • the wavefront aberration sensor has the ability to simultaneously detect image quality parameters such as distortion and field curvature.
  • FIG. 1 is a structural view of an in-situ multi-channel imaging quality detecting device of the lithography machine of the present invention.
  • Figure 2 is a schematic view of the object grating plate of the present invention.
  • Figure 3 is a schematic view showing the structure of a wave aberration sensor of the present invention.
  • Figure 4 is a schematic view of an image surface grating plate according to the present invention.
  • Figure 5 corresponds to the detection error of the apertureless array.
  • Figure 6 is equivalent to the detection error of the aperture array.
  • FIG. 1 is a block diagram of an in-situ multi-channel imaging quality detecting apparatus of a lithography machine of the present invention.
  • the in-situ multi-channel imaging quality detecting device of the lithography machine of the present invention comprises a light source 1, a lighting system 2, a mask table 4, a lithography projector objective lens 5, a workpiece table 7, and a masking table 4 a surface grating plate 3 and a wave aberration sensor 6 disposed on the workpiece stage 7 and a data processing computer 8 connected to the wave aberration sensor 6;
  • the object grating plate 3 is composed of 14 sets of object gratings having a period of 41.52 ⁇ m and a duty ratio of 50% (see FIG.
  • the image plane grating plate 601 includes 14 groups of image plane gratings 601A to 601N having a duty ratio of 50%; the image plane gratings 601A to 601N adopt a two-dimensional checkerboard grating; and the image plane gratings 601A to 601N
  • the period is 10.38 ⁇ m; the object grating and the image grating are transmissive amplitude gratings; the numerical aperture of the projection objective 5 of the lithography machine is 0.93, and the imaging magnification of the projection objective 5 of the lithography machine is 1/4, the shear rate 1%; the wave aberration sensor 6 (see Fig.
  • the two-dimensional photoelectric sensor 603 uses a CMOS camera, the pixel size is 5.6 ⁇ m ⁇ 5.6 ⁇ m, the number of pixels is 2040 ⁇ 1084; the aperture size of the aperture array 602 is 1.4 ⁇ m, The ratio of the pixel size to the aperture diameter of the CMOS camera is 4, the period of the aperture array 602 is equal to 5.6 ⁇ m of the pixel period of the photodiode sensor 603, and the spacing between adjacent two-dimensional gratings 601X on the image plane grating 601 is 1.5 mm; The spacing between adjacent first gratings on the surface grating plate 3 and the spacing between adjacent second gratings are equal to 6 mm; the first grating 3X1 and the second grating 3X2 of each group of surface gratings on the object grating plate 3 The spacing between them is equal to 3mm
  • the object grating plate 3 is composed of 14 sets of object gratings whose periods are both P o and a duty ratio of 50%; each set of surface gratings includes a grating grating along the y direction of the first grating 3X1 and a grating line along the x The second grating 3X2 of the direction; the X is the number of each set of gratings, denoted by A, B, C, ..., N, such as the first grating 3A1 and the second grating 3A2 of the group A object grating, the group B object a first grating 3B1 and a second grating 3B2 of the grating;
  • the first grating 3X1 and the second grating 3X2 are diffraction gratings of a phase grating or an amplitude grating type
  • the first grating 3X1 and the second grating 3X2 are reflective gratings or transmissive gratings;
  • the wave aberration sensor 6 includes an image surface grating plate 601, an aperture array 602 and a two-dimensional photoelectric sensor 603 which are sequentially placed in the beam propagation direction;
  • the image surface grating plate 601 (see FIG. 4) includes 14 sets of image surface gratings 601X having the same period and a duty ratio of 50%, and the X is the number of each set of gratings, and is represented by A, B, C, and the like;
  • the image plane grating 601X is a two-dimensional transmission grating of a checkerboard grating type
  • the image plane grating 601X is a phase grating or an amplitude grating type diffraction grating
  • the period P o of the first object surface grating 3X1 and the second object surface grating 3X2 on the object grating plate 3 and the period P i of the image plane grating 601X satisfy the following relationship:
  • M is an imaging magnification of the projection objective 5 of the lithography machine
  • P i is determined by a shear rate s, a wavelength ⁇ of the light source, and a numerical aperture NA of the projection objective of the lithography machine
  • the distance d o between each set of surface gratings on the object grating plate 3 and the distance d i between each set of image surface gratings on the image grating plate 601 satisfy the following relationship:
  • the spacing between the first grating 3X1 and the second grating 3X2 of the object grating on the object grating plate 3 is equal.
  • the period of the small holes on the aperture array 602 is equal to the period of the pixels on the photoelectric two-dimensional sensor 603, and the small hole position corresponds to the pixel position of the photoelectric two-dimensional sensor, and the small hole diameter is the pixel size of the photoelectric two-dimensional sensor 603. 1/4;
  • the mask table 4 is a displacement stage for moving the object grating plate 3 into the object optical path of the projection objective 5 of the lithography machine;
  • the workpiece stage 7 is a displacement stage for moving the wavefront aberration sensor 6 into the image side optical path of the projector objective lens 5 and driving the wave aberration sensor 6 to move;
  • the two-dimensional photosensor 603 is a camera, a CCD, a CMOS image sensor, a PEEM, or a two-dimensional photodetector array, the detection surface receives a shear interference image generated by the image plane grating 601X and sampled by the aperture array 602;
  • the computer 8 is used to control the wave aberration detection process, store measurement data, and process and analyze the interference map.
  • the detection method of the in-situ multi-channel imaging quality detecting device of the above lithography machine is adopted, and the steps of the method are as follows:
  • the workpiece stage 7 is moved a plurality of times in the x direction. After each movement, the wave aberration sensor 603 collects a shearing interferogram, and the 14 field points calculated from the acquired interferogram are obtained. Shear phase information of the position in the x direction;
  • the workpiece table 7 is moved a plurality of times in the y direction for measurement. After each movement, the wave aberration sensor 603 acquires a shear interferogram, and the 14 views calculated from the acquired interferogram are obtained. Shear phase information of the field position in the y direction;
  • the invention uses the aperture array to sample the wave aberration and increases the detection spatial resolution by S 2 times.
  • the simulation was performed using a 256 pixel ⁇ 256 pixel wave aberration (root mean square value of 0.0995 ⁇ ).
  • the average value of every 4 pixels in the differential wavefront is equivalent to the absence of an aperture array, and a differential wavefront of 64 pixels ⁇ 64 pixels is obtained, and the differential wavefront is reconstructed.
  • the error is shown in Fig. 5, and the error rms
  • the value is 00141 ⁇ ; the differential wavefront of the wave aberration is sampled, and one pixel is selected every 4 pixels, which is equivalent to adding a small hole array on the detector to obtain a differential wavefront of 64 pixels ⁇ 64 pixels, and the differential wavefront is obtained.
  • the error is shown in Figure 6, and the rms error is 0.0001 ⁇ .
  • the embodiment proves that the device and the method of the invention improve the resolution of the projection object wavefront aberration detection by 16 times. Therefore, the number of channels of the in-situ multi-channel imaging quality detecting device of the lithography machine can be increased by 16 times and the detection speed is maximum. It can also be increased by 16 times.
  • the wavefront aberration sensor has the ability to simultaneously detect image quality parameters such as distortion and curvature of field.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un dispositif et un procédé de détection de qualité d'imagerie multicanaux in situ pour un aligneur de masque. Le dispositif comprend une source de lumière (1) de l'aligneur de masque, un système d'éclairage (2), une table de masque (4), une lentille de projection (5), une paillasse (7), et un ordinateur (8), et comprend également une plaque de grille de plan d'objet (3) et un capteur d'aberration d'onde (6). Grâce au dispositif, la qualité d'imagerie de l'aligneur de masque, qui est liée à l'aberration d'onde, à la distorsion et à la courbure de champ, est détectée in situ, ce qui permet d'augmenter le nombre de canaux parallèles et la vitesse de détection de la qualité d'imagerie.
PCT/CN2015/088311 2015-06-15 2015-08-27 Dispositif et procédé de détection de qualité d'imagerie multicanaux in situ pour aligneur de masque WO2016201788A1 (fr)

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CN201510325941.7A CN106324996B (zh) 2015-06-15 2015-06-15 光刻机原位多通道成像质量检测装置及方法
CN201510325941.7 2015-06-15

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CN106773552B (zh) * 2017-02-04 2019-01-22 深圳市优盛科技有限公司 无掩膜实时微纳打码系统
CN108803248B (zh) * 2018-05-03 2024-04-02 中国科学院光电研究院 投影物镜的数值孔径的在线检测装置及方法
CN110568729B (zh) * 2018-06-05 2021-07-09 上海微电子装备（集团）股份有限公司 像差测量装置及方法
CN109141291A (zh) * 2018-09-25 2019-01-04 南昌航空大学 一种快速相位解包裹算法

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