WO2016190203A1 - Cleaning device - Google Patents

Cleaning device Download PDF

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Publication number
WO2016190203A1
WO2016190203A1 PCT/JP2016/064812 JP2016064812W WO2016190203A1 WO 2016190203 A1 WO2016190203 A1 WO 2016190203A1 JP 2016064812 W JP2016064812 W JP 2016064812W WO 2016190203 A1 WO2016190203 A1 WO 2016190203A1
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WO
WIPO (PCT)
Prior art keywords
cleaning
cleaning solution
unit
solution
liquefying
Prior art date
Application number
PCT/JP2016/064812
Other languages
French (fr)
Japanese (ja)
Inventor
兼次 長尾
中村　健一
Original Assignee
住友電気工業株式会社
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Publication date
Application filed by 住友電気工業株式会社 filed Critical 住友電気工業株式会社
Publication of WO2016190203A1 publication Critical patent/WO2016190203A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a cleaning apparatus.
  • a cleaning solution is used for the purpose of removing metal impurities such as Fe (iron), Ni (nickel), Cu (copper), and Zn (zinc) attached to the surface of a semiconductor substrate. Washing is performed.
  • a cleaning apparatus for performing such cleaning a structure in which the object to be processed and the cleaning solution are not exposed to the atmosphere has been proposed (see, for example, Japanese Patent Application Laid-Open No. 2001-110773 (Patent Document 1)).
  • the cleaning device is a cleaning device for cleaning a semiconductor with a cleaning solution.
  • the cleaning apparatus includes a cleaning solution holding unit that holds a cleaning solution, and a liquefaction unit connected to the cleaning solution holding unit.
  • the liquefying unit is installed so that the cleaning solution that has reached the liquefying unit from the cleaning solution holding unit by being vaporized is liquefied in the liquefying unit and flows into the cleaning solution holding unit.
  • the concentration of the cleaning solution is low (for example, even when the cleaning solution contains 65% by mass or less of sulfuric acid and the balance is made of water and inevitable impurities) It can be employed as a cleaning solution.
  • concentration of a cleaning solution is low, the influence which the change of the said density
  • an object is to provide a cleaning apparatus capable of suppressing the change in the concentration of the cleaning solution.
  • the cleaning apparatus of the present application is a cleaning apparatus for cleaning a semiconductor with a cleaning solution.
  • the cleaning apparatus includes a cleaning solution holding unit that holds a cleaning solution, and a liquefaction unit connected to the cleaning solution holding unit.
  • the liquefying unit is installed so that the cleaning solution that has reached the liquefying unit from the cleaning solution holding unit by being vaporized is liquefied in the liquefying unit and flows into the cleaning solution holding unit.
  • the liquefaction unit is installed so that the cleaning solution that has reached the liquefaction unit from the cleaning solution holding unit by being vaporized is liquefied in the liquefaction unit and flows into the cleaning solution holding unit. Therefore, it is possible to prevent the solvent and solute of the vaporized cleaning solution from being discharged to the outside. As a result, according to the cleaning apparatus of the present application, a change in the concentration of the cleaning solution can be suppressed.
  • the liquefying unit may be installed so that the cleaning solution liquefied in the liquefying unit can flow into the cleaning solution holding unit by gravity. By doing so, the cleaning solution liquefied in the liquefaction unit can be flowed into the cleaning solution holding unit without providing a separate power source.
  • the cleaning apparatus may further include a heating unit that heats the cleaning solution held in the cleaning solution holding unit.
  • a heating unit that heats the cleaning solution held in the cleaning solution holding unit.
  • the cleaning device may further include a cooling unit that cools the space in the liquefying unit.
  • the cleaning device may further include an air supply pipe connected to at least one of the liquefying unit and the cleaning solution holding unit.
  • the cleaning device may further include an exhaust pipe connected to the liquefaction unit or the cleaning solution holding unit, and a valve installed in the exhaust pipe.
  • a valve installed in the exhaust pipe, it is possible to prevent the solvent or solute of the vaporized cleaning solution from being discharged from the exhaust pipe to the outside.
  • the exhaust pipe may be connected to the liquefaction unit.
  • the solvent or solute of the vaporized cleaning solution passes through the liquefying section before reaching the exhaust pipe. Therefore, it can suppress more reliably that the solvent and solute of the vaporized cleaning solution are discharged from the exhaust pipe to the outside.
  • the exhaust pipe may be connected to the side of the liquefying unit opposite to the side connected to the cleaning solution holding unit as viewed from the region cooled by the cooling unit.
  • the cleaning apparatus may further include a pressure measurement unit connected to at least one of the liquefaction unit and the cleaning solution holding unit. By doing in this way, the pressure inside a liquefying part and a washing solution holding part can be grasped.
  • cleaning device 1 in the present embodiment is a cleaning device for cleaning semiconductor substrate 91 with cleaning solution 92.
  • the semiconductor composing the semiconductor substrate 91 is, for example, a III-V group compound semiconductor.
  • the III-V compound semiconductor is, for example, a gallium nitride based semiconductor containing at least one element selected from the group consisting of As (arsenic), P (phosphorus), Sb (antimony), and N (nitrogen) as a group V element. There may be.
  • Ga (gallium), In (indium), Al (aluminum), or the like can be used as a group III element constituting the gallium nitride semiconductor.
  • the gallium nitride semiconductor is, for example, Ga U1 In U2 Al 1-U1-U2 As V1 P V2 Sb V3 N 1-V1-V2-V3 (U1 exceeds 0 and 1 or less, U2, V1, V2 and V3 are 0 or more 1 or less, U1 + U2 may exceed 0 and be 1 or less, and V1 + V2 + V3 may be 0 or more and 1 or less.
  • the gallium nitride based semiconductor is, for example, GaN.
  • the semiconductor substrate 91 may be a substrate made of a semiconductor, or may be one in which a conductor such as an insulator functioning as an insulating region, a metal functioning as an electrode or a wiring is formed on the substrate.
  • the cleaning solution 92 various acidic, alkaline, and neutral solutions can be employed.
  • the cleaning solution 92 includes pure water and 65 mass% or less sulfuric acid.
  • the cleaning solution 92 contains 65% by mass or less of sulfuric acid, and the balance consists of water and inevitable impurities.
  • the hydrogen ion concentration pH of the cleaning solution 92 is 2 or less.
  • the oxidation-reduction potential of the cleaning solution 92 is 0.6V or more.
  • the cleaning solution 92 may contain pure water and 50% by mass or less of sulfuric acid.
  • the cleaning solution 92 may contain 50% by mass or less of sulfuric acid, and the balance may be made of water and inevitable impurities.
  • the cleaning apparatus 1 includes a solution tank 10 as a cleaning solution holding unit that holds a cleaning solution 92, and a liquefaction unit 20 connected to the solution tank 10.
  • the solution tank 10 has, for example, a cylindrical shape having an upper wall 10A and a bottom wall 10B as end surfaces.
  • the upper wall 10A is a wall of the solution tank 10 corresponding to the upper end face in the vertical direction in the state where the cleaning device 1 is installed.
  • the bottom wall 10B is a wall of the solution tank 10 corresponding to the end surface on the lower side in the vertical direction in the state where the cleaning device 1 is installed.
  • An opening 11 as a connection portion is formed in the upper wall 10 ⁇ / b> A of the solution tank 10.
  • a connecting pipe 51 as a connecting member is connected to the opening 11 of the solution tank 10.
  • the connecting pipe 51 has a cylindrical shape with both end faces opened.
  • One end of the connection pipe 51 is connected to the solution tank 10.
  • the other end of the connecting pipe 51 is connected to the liquefying unit 20.
  • the solution tank 10 and the liquefying unit 20 are connected by a connecting pipe 51.
  • the liquefying part 20 includes a main body part 21 having a cylindrical shape and a liquid collecting part 22 connected to the main body part 21 and having a truncated cone shape.
  • the main body 21 has an upper wall 21A as an end surface in a region corresponding to one end.
  • the other end of the main body 21 is open.
  • the other end of the main body portion 21 is connected to the liquid collecting portion 22.
  • the central axis of the cylinder corresponding to the main body portion 21 coincides with the central axis of the truncated cone corresponding to the liquid collecting portion 22.
  • the liquid collection part 22 is connected to the main body part 21 in a region corresponding to the end face of the truncated cone having the larger diameter.
  • the liquid collection unit 22 is connected to the connection pipe 51 in a region corresponding to the end surface on the side having a smaller diameter.
  • the region corresponding to the end surface of the liquid collection portion 22 on the side having the larger diameter and the region corresponding to the other end portion of the main body portion 21 have a circular shape with the same diameter.
  • the region corresponding to the end surface on the side where the diameter of the liquid collecting portion 22 is small and the region corresponding to the other end portion of the connection pipe 51 have a circular shape with the same diameter.
  • the cross-sectional area perpendicular to the axial direction of the internal space of the liquid collecting part 22 decreases as the connecting pipe 51 is approached.
  • the liquefying unit 20 is installed so that the end surface of the liquid collection unit 22 on the larger diameter side is the upper side in the vertical direction and the end surface on the smaller diameter side is the lower side in the vertical direction.
  • the height of the inner wall surface of the liquid collection unit 22 decreases as the connection pipe 51 is approached.
  • the liquefying unit 20 is installed so that the cleaning solution 92 liquefied in the liquefying unit 20 flows into the connection pipe 51 by gravity.
  • the cleaning solution 92 liquefied in the liquefying unit 20 and flows into the connection pipe 51 flows into the solution tank 10 by gravity.
  • the cleaning apparatus 1 includes a heater 31 as a heating unit. Although the heater 31 is not an essential component in the cleaning apparatus of the present application, the heater 31 can easily adjust the temperature of the cleaning solution.
  • the heater 31 is disposed so as to face the outer peripheral surface of the solution tank 10.
  • the heater 31 may be disposed so as to contact the outer peripheral surface of the solution tank 10.
  • the heater 31 is connected to a power source (not shown).
  • the heater 31 heats the wall surface (outer peripheral surface) of the solution tank 10 with electric power supplied from the power source. As a result, the cleaning solution 92 held in the solution tank 10 is heated to a desired temperature.
  • the heater 31 may be arranged so as to face the bottom wall 10B instead of being arranged so as to face the outer peripheral surface or in addition to being arranged so as to face the outer peripheral surface. . Further, the heater 31 may be arranged inside the solution tank 10 instead of or in addition to the above arrangement.
  • the cleaning device 1 includes a cooling water flow path 34 as a cooling unit.
  • the cooling water flow path 34 is not an essential component in the cleaning device of the present application, it becomes easy to liquefy the cleaning solution 92 vaporized by providing this.
  • the cooling water channel 34 is installed in the main body 21 of the liquefying unit 20.
  • the cooling water channel 34 is disposed in contact with the outer peripheral surface of the main body 21.
  • the cooling water channel 34 is disposed so as to surround the outer peripheral surface of the main body 21.
  • a cooling water pipe 79 as a cooling liquid pipe is connected to the cooling water flow path 34.
  • the cooling water pipe 79 is connected to the pure water manufacturing apparatus 3 as a coolant supply unit. Pure water produced in the pure water production apparatus 3 is supplied to the cooling water flow path 34 via the cooling water pipe 79 as cooling water.
  • the pure water that is the cooling water is sent to the cooling water flow path 34 by, for example, a pump (not shown).
  • the cleaning device 1 includes a pipe 75 as a solute flow path connected to the solution tank 10.
  • the pipe 75 is connected to the solute holding unit 2.
  • the solute holder 2 holds the solute of the cleaning solution 92.
  • sulfuric acid is retained. Sulfuric acid retained in the solute retaining unit 2 can be supplied to the solution tank 10 via the pipe 75.
  • the cleaning apparatus 1 includes a pipe 74 as a solvent flow path connected to the solution tank 10.
  • the pipe 74 is connected to the pure water production apparatus 3 as a solvent supply unit.
  • the pure water produced in the pure water production apparatus 3 can be supplied to the solution tank 10 via the pipe 74.
  • the pure water production apparatus 3 functions as both a solvent supply unit and a coolant supply unit.
  • the cleaning apparatus 1 includes an exhaust pipe 77A connected to the liquefaction unit 20 and a valve 33 installed in the exhaust pipe 77A. Installation of the valve 33 in the exhaust pipe 77A is not an essential configuration in the cleaning apparatus of the present application, but by installing this, the solvent or solute of the vaporized cleaning solution 92 is discharged from the exhaust pipe 77A to the outside. Can be more reliably suppressed.
  • the exhaust pipe 77A is connected to the upper wall 21A of the main body 21.
  • the exhaust pipe 77 ⁇ / b> A is connected to the side of the liquefying unit 20 opposite to the side connected to the solution tank 10 (the side of the connection pipe 51) when viewed from the region cooled by the cooling water flow path 34.
  • the exhaust pipe 77 ⁇ / b> A is connected to the exhaust treatment device 6.
  • the cleaning apparatus 1 includes a pressure gauge 32 as a pressure measuring unit connected to the liquefying unit 20.
  • a pressure gauge 32 as a pressure measuring unit connected to the liquefying unit 20.
  • the cleaning device 1 includes an air supply pipe 78 connected to the solution tank 10.
  • the supply pipe 78 is not an essential component in the cleaning apparatus of the present application, but the cleaning apparatus 1 includes the supply pipe 78 to supply an appropriate gas from the supply pipe 78 to the solution tank 10 and adjust the pressure in the solution tank 10. be able to.
  • a valve 35 is installed in the air supply pipe 78.
  • An inert gas flows through the supply pipe 78.
  • As the inert gas for example, nitrogen, argon or the like can be employed.
  • the supply pipe 78 is connected to an inert gas holding unit 4 that holds an inert gas such as nitrogen or argon. After the gas existing in the internal space of the solution tank 10 is replaced by the inert gas supplied from the air supply pipe 78, the cleaning solution 92 is prepared in the solution tank 10.
  • the cleaning device 1 has a disk shape (dish shape), a holding unit 41 that holds a semiconductor substrate 91 that is an object to be processed, and is connected to the holding unit 41 and extends along the central axis of the holding unit 41.
  • a shaft portion 42 that supports the holding portion 41, a rotation drive portion 44 that is connected to the shaft portion 42 and rotatably supports the holding portion 41 via the shaft portion 42, and the holding portion 41 and the holding portion 41.
  • the cup part 45 has a shape that can surround the semiconductor substrate 91 to be held, and the elevating part 43 that is connected to the cup part 45 and supports the cup part 45 so that it can be raised and lowered.
  • the holding unit 41 holds, for example, the semiconductor substrate 91 by vacuum suction.
  • the rotation drive unit 44 is, for example, a motor connected to a power source (not shown).
  • the cup portion 45 surrounds the semiconductor substrate 91, thereby preventing the cleaning solution 92 used for cleaning the semiconductor substrate 91 from being scattered.
  • the cleaning device 1 includes a pipe 76 connected to the cup portion 45.
  • the pipe 76 is connected to the waste liquid treatment apparatus 5.
  • the pipe 76 is connected to the exhaust treatment device 6 via the exhaust pipe 77B.
  • the waste liquid that has entered the pipe 76 is processed in the waste liquid processing apparatus 5.
  • the exhaust gas that has entered the pipe 76 is processed by the exhaust gas processing device 6.
  • the cleaning apparatus includes a housing 1A and an exhaust pipe 77C that connects the housing 1A and the exhaust pipe 77B. Exhaust gas from inside the housing 1A is conveyed to the exhaust treatment device 6 via the exhaust pipe 77C and the exhaust pipe 77B, and is processed in the exhaust treatment device 6.
  • the cleaning apparatus 1 includes a first nozzle 61, a second nozzle 62, and a third nozzle 63.
  • the first nozzle 61, the second nozzle 62 and the third nozzle 63 are arranged so as to face the semiconductor substrate 91 held by the holding unit 41.
  • the first nozzle 61 is connected to the solution tank 10 via a pipe 71.
  • the second nozzle 62 is connected to the pure water production apparatus 3 via a pipe 72.
  • the third nozzle 63 is connected to the inert gas holding unit 4 via the pipe 73.
  • an object to be processed is prepared (S11).
  • a semiconductor substrate 91 that is an object to be processed is prepared.
  • a semiconductor constituting the semiconductor substrate 91 is, for example, a gallium nitride semiconductor.
  • the semiconductor substrate 91 may be a substrate made of a gallium nitride-based semiconductor, or may be one in which a conductor such as an insulator functioning as an insulating region, a metal functioning as an electrode or a wiring is formed on the substrate. Good.
  • a substrate made of a gallium nitride semiconductor can be obtained by slicing an ingot made of a gallium nitride semiconductor.
  • a semiconductor layer formed by epitaxial growth may be formed on a substrate obtained by slicing an ingot.
  • the semiconductor substrate 91 that is the object to be processed prepared in the step (S11) is set in the holding unit 41 of the cleaning apparatus 1 (S12).
  • the elevating unit 43 is operated to lower the cup unit 45.
  • the holding portion 41 is separated from the space surrounded by the cup portion 45.
  • the semiconductor substrate 91 is placed on the holding unit 41.
  • the placed semiconductor substrate 91 is held, for example, by vacuum suction.
  • the raising / lowering part 43 is operated and the cup part 45 is raised.
  • the holding portion 41 and the semiconductor substrate 91 held by the holding portion 41 are surrounded by the cup portion 45.
  • step (S12) the semiconductor substrate 91 set on the holding unit 41 is cleaned with the cleaning solution 92 (S13).
  • the cleaning solution 92 held in the solution tank 10 contains 65% by mass or less of sulfuric acid, and the balance is composed of pure water and inevitable impurities.
  • the cleaning solution 92 is adjusted to a desired concentration by sulfuric acid supplied from the solute holding unit 2 to the solution tank 10 and pure water supplied from the pure water production apparatus 3 to the solution tank 10.
  • the cleaning solution 92 in the solution tank 10 is heated by the heater 31.
  • the cleaning solution 92 is heated so that the temperature at which the cleaning solution 92 reaches the semiconductor substrate 91 is 70 ° C. or higher.
  • the cleaning solution 92 contains 50% by mass or less of sulfuric acid and the balance is composed of pure water and unavoidable impurities
  • the cleaning solution 92 is set so that the temperature when the cleaning solution 92 reaches the semiconductor substrate 91 is 80 ° C. or higher. 92 is heated.
  • the holding unit 41 is driven by the rotation driving unit 44 and rotates around the rotation axis passing through the shaft unit 42. As a result, the semiconductor substrate 91 held by the holding unit 41 rotates around the rotation axis.
  • the cleaning solution 92 held in the solution tank 10 is transported to the first nozzle 61 via the pipe 71 while the semiconductor substrate 91 is rotating. Then, the cleaning solution 92 is discharged from the first nozzle 61 along the arrow ⁇ .
  • the discharged cleaning solution 92 contacts the surface (main surface) of the semiconductor substrate 91.
  • the cleaning solution 92 on the surface of the semiconductor substrate 91 flows radially outward due to the centrifugal force generated by the rotation of the semiconductor substrate 91. Thereby, the surface of the semiconductor substrate 91 is cleaned.
  • the cleaning solution 92 that has flowed through the surface of the semiconductor substrate 91 and contributed to the cleaning is collected by the cup portion 45 and sent to the waste liquid processing apparatus 5 as a waste liquid through the pipe 76. Then, in the waste liquid treatment apparatus 5, a treatment such as neutralization of the cleaning solution 92 is performed. Further, the gas that has entered the pipe 76 from the cup portion 45 is sent to the exhaust treatment device 6 through the exhaust pipe 77B and processed. After the cleaning with the cleaning solution 92 has sufficiently progressed, the supply of the cleaning solution 92 from the solution tank 10 is stopped, and the step (S13) ends.
  • the semiconductor substrate 91 is washed with pure water (S14). Specifically, pure water is transported from the pure water production apparatus 3 to the second nozzle 62 via the pipe 72 while the semiconductor substrate 91 is rotating as in the step (S13). Then, pure water is discharged from the second nozzle 62 along the arrow ⁇ . The discharged pure water comes into contact with the surface (main surface) of the semiconductor substrate 91. The pure water on the surface of the semiconductor substrate 91 flows outward in the radial direction by the centrifugal force generated by the rotation of the semiconductor substrate 91. Thereby, the cleaning solution 92 remaining on the surface of the semiconductor substrate 91 is removed.
  • the pure water that has flowed on the surface of the semiconductor substrate 91 is collected by the cup portion 45 and sent to the waste liquid treatment apparatus 5 as a waste liquid through the pipe 76. And in the waste liquid processing apparatus 5, processes, such as neutralization, are implemented. Further, the gas that has entered the pipe 76 from the cup portion 45 is sent to the exhaust treatment device 6 through the exhaust pipe 77B and processed. After the removal of the cleaning solution 92 with pure water has sufficiently progressed, the supply of pure water from the pure water production apparatus 3 is stopped, and the step (S14) ends.
  • the semiconductor substrate 91 is dried (S15). Specifically, as in the steps (S13) and (S14), in a state where the semiconductor substrate 91 is rotating, for example, nitrogen gas is supplied from the inert gas holding unit 4 to the third nozzle 63 via the pipe 73. Transported. Then, nitrogen gas is discharged from the third nozzle 63 along the arrow ⁇ . The discharged nitrogen gas is blown onto the surface (main surface) of the semiconductor substrate 91. Thereby, evaporation of moisture remaining on the surface of the semiconductor substrate 91 proceeds, and the surface of the semiconductor substrate 91 is dried.
  • nitrogen gas is supplied from the inert gas holding unit 4 to the third nozzle 63 via the pipe 73. Transported. Then, nitrogen gas is discharged from the third nozzle 63 along the arrow ⁇ . The discharged nitrogen gas is blown onto the surface (main surface) of the semiconductor substrate 91. Thereby, evaporation of moisture remaining on the surface of the semiconductor substrate 91 proceeds, and the surface of the semiconductor substrate
  • the supply of the nitrogen gas from the inert gas holding unit 4 is stopped, and the step (S15) is completed. While the steps (S13) to (S15) are performed, the gas in the housing 1A of the cleaning device 1 is sent to the exhaust treatment device 6 through the exhaust pipe 77C and the exhaust pipe 77B and processed as necessary.
  • the semiconductor substrate 91 as the object to be processed is taken out from the cleaning apparatus 1 (S16). Specifically, referring to FIG. 1, for the purpose of facilitating removal of the semiconductor substrate 91, the cup unit 45 is lowered by operating the elevating unit 43. As a result, the holding portion 41 is separated from the space surrounded by the cup portion 45. Next, the semiconductor substrate 91 is removed from the holding portion 41. For example, after the vacuum suction by the holding unit 41 is released, the semiconductor substrate 91 is taken out from the cleaning apparatus 1 by a substrate transfer arm (not shown). With the above procedure, the cleaning of the semiconductor substrate 91 using the cleaning apparatus 1 is completed.
  • the concentration of the cleaning solution 92 in the solution tank 10 is appropriately adjusted before the cleaning of the semiconductor substrate 91 by the cleaning apparatus 1 is started.
  • the solute and solvent of the cleaning solution 92 are vaporized, the composition of the cleaning solution 92 changes, and there is a possibility that desired cleaning cannot be performed.
  • the cleaning solution 92 is heated by the heater 31. Therefore, vaporization of the solute and solvent of the cleaning solution 92 is likely to proceed.
  • the concentration of sulfuric acid, which is a solute tends to increase due to the evaporation of water, which is a solvent.
  • the cleaning device 1 includes the liquefaction unit 20. Therefore, the solute and the solvent of the cleaning solution 92 that have reached the liquefying unit 20 from the solution tank 10 by being vaporized are liquefied in the liquefying unit 20 and flow into the solution tank 10.
  • the solute or solvent of the cleaning solution 92 liquefied in the liquefying unit 20 flows into the solution tank 10 by gravity. For this reason, it is possible to suppress the exhausted solvent or solute of the cleaning solution 92 from the exhaust pipe 77A. Further, the cleaning solution 92 liquefied in the liquefying unit 20 is guided to the solution tank 10 without providing a separate power source. As a result, the change in the concentration of the cleaning solution 92 is suppressed.
  • the cleaning device 1 includes a cooling water channel 34. Therefore, the solute and solvent of the cleaning solution 92 that has entered the liquefying unit 20 can be efficiently liquefied. Further, by the cooling with the cooling water (pure water) flowing through the cooling water flow path 34, it is possible to suppress an increase in the gas pressure in the solution tank 10 and the liquefying unit 20 due to a temperature rise or the like. Further, the exhaust pipe 77 ⁇ / b> A is connected to the liquefaction unit 20. Therefore, the solvent or solute of the vaporized cleaning solution 92 passes through the liquefying unit 20 before reaching the exhaust pipe 77A, and is efficiently liquefied.
  • the cooling water pure water
  • the exhaust pipe 77 ⁇ / b> A is connected to the side of the liquefying unit 20 opposite to the side connected to the solution tank 10 when viewed from the region cooled by the cooling water flow path 34. Therefore, before the evaporated solvent or solute of the cleaning solution 92 reaches the exhaust pipe 77A, it passes through the region cooled by the cooling water flow path 34 and is efficiently liquefied.
  • the pressure of the gas in the solution tank 10 and the liquefaction part 20 is adjusted as follows.
  • the pressure gauge 32, the valve 33, and the valve 35 are connected to a control unit 9 such as a relay circuit or a PLC (Programmable Logic Controller).
  • the control unit 9 controls the valve 33 and the valve 35 based on the pressure information obtained from the pressure gauge 32 to adjust the pressure.
  • the control unit 9 When the difference between the pressure of the gas in the solution tank 10 and the liquefaction unit 20 measured by the pressure gauge 32 and the atmospheric pressure is, for example, 1 kPa or less, the control unit 9 maintains the valve 33 and the valve 35 in the closed state.
  • the pressure of the gas in the solution tank 10 and the liquefaction unit 20 measured by the pressure gauge 32 is 1 kPa above atmospheric pressure due to an increase in the cleaning solution 92, an increase in temperature in the solution tank 10 and the liquefaction unit 20, and the like.
  • the control unit 9 opens the valve 33. Thereby, the gas in the solution tank 10 and the liquefaction part 20 is discharged
  • the control unit 9 35 is opened.
  • the nitrogen gas held in the inert gas holding unit 4 flows into the solution tank 10 through the air supply pipe 78.
  • the control unit 9 closes the valve 35.
  • the gas in the solution tank 10 and the liquefying unit 20 is discharged to the outside through the exhaust pipe 77A, and the pressure in the solution tank 10 and the liquefying unit 20 is close to atmospheric pressure. To maintain. Thereby, invasion of gas from the outside due to the negative pressure in the solution tank 10 and the liquefying section 20 while suppressing the exhausted solvent and solute of the cleaning solution 92 from the exhaust pipe 77A to the outside. Can be suppressed.
  • the structure which is made may be adopted.
  • the gas pressure in the solution tank 10 and the liquefaction unit 20 is managed, and an inert gas (nitrogen gas) is allowed to flow into the solution tank 10 and the liquefaction unit 20 only when necessary.
  • an inert gas is always allowed to flow into the solution tank 10 and the liquefying unit 20 and is discharged from the exhaust pipe 77A may be employed.
  • the flow rate of the inert gas in the exhaust pipe 77A is preferably 5 cm / sec or more.
  • the controller 9 the pressure gauge 32, the valve 33, the cooling water passage 34 and the cooling water pipe 79 are omitted, and the stability of the concentration of the cleaning solution 92 is confirmed.
  • An experiment was conducted. The specific method of the experiment is as follows.
  • the cleaning solution 92 adjusted to a sulfuric acid concentration of 1.00 vol% by mixing sulfuric acid and water is held in the solution tank 10, and the temperature of the cleaning solution 92 is in the range of 89.5 ° C. or higher and 90.5 ° C. or lower. Maintained.
  • the inert gas was supplied from the inert gas holding unit 4 to the solution tank 10 through the air supply pipe 78 so that the flow rate of the inert gas (nitrogen gas) in the exhaust pipe 77A was 5.25 cm / sec. .
  • the temperature around the liquefaction unit 20 was maintained at 26 ° C.
  • the decrease amount of the cleaning solution 92 was measured from the height of the cleaning solution 92 every day. Since the vapor pressure of sulfuric acid in the vicinity of 90 ° C.
  • the decrease amount of the cleaning solution 92 is assumed to be the evaporation amount of water, and the evaporation rate and concentration of the cleaning solution 92 are Calculated.
  • the evaporation rate of the cleaning solution 92 means a ratio of a decrease amount of the cleaning solution 92 to the initial amount of the cleaning solution 92.
  • the area of the inner wall of the liquefying unit 20 is the surface area of the cleaning solution 92 that contacts the gas in the solution tank 10 (the area of the liquid surface of the cleaning solution 92 in the solution tank 10). Is set to be equal to.
  • the experimental results are shown in FIG.
  • the horizontal axis indicates the number of days elapsed.
  • the left vertical axis indicates the concentration of the cleaning solution 92, and the right vertical axis indicates the evaporation rate of the cleaning solution 92.
  • the diamond data points correspond to the concentration of the cleaning solution 92, and the square data points correspond to the evaporation rate of the cleaning solution 92.
  • the evaporation rate of cleaning solution 92 at the elapse of 11 days is 3.58 vol%
  • the concentration of cleaning solution 92 is 1.04 vol%. That is, the amount of change in the concentration of the cleaning solution 92 is suppressed to 0.04 vol%.
  • the cleaning solution 92 is generally discarded within one day after preparation, it can be said that the concentration of the cleaning solution 92 has hardly changed. This is probably because most of the cleaning solution 92 evaporated from the solution tank 10 is liquefied in the liquefaction unit 20 and returned to the solution tank 10.
  • the change in the concentration of the cleaning solution can be suppressed according to the cleaning device of the present application.
  • the evaporation rate and concentration of the cleaning solution 92 slightly increase with the passage of time. This is considered to be because a part of the cleaning solution 92 evaporated from the solution tank 10 is discharged through the exhaust pipe 77A.
  • the area of the inner wall of the liquefying unit 20 is the surface area of the cleaning solution 92 that contacts the gas in the solution tank 10. It is preferably set to be equal to or greater than (the area of the liquid surface of the cleaning solution 92 in the solution tank 10).
  • a cooling unit for cooling the space in the liquefaction unit 20, a cooling water pipe 79, a valve 33 installed in the exhaust pipe 77A, a pressure gauge 32, a control unit 9 and the like are added.
  • a structure that can cool the liquefying unit 20 and seal the liquefying unit 20.

Abstract

A cleaning device for cleaning semiconductors using a cleaning solution is provided with a cleaning-solution-holding part for holding the cleaning solution, and a liquefying part connected to the cleaning-solution-holding part. The liquefying part is disposed in such a manner that, upon reaching the liquefying part from the cleaning-solution-holding part, the cleaning solution is liquefied in the liquefying part due to gasification and flows into the cleaning-solution-holding part.

Description

洗浄装置Cleaning device
　本発明は、洗浄装置に関する。 The present invention relates to a cleaning apparatus.
　本出願は、２０１５年５月２２日出願の日本出願第２０１５－１０４１９５号に基づく優先権を主張し、前記日本出願に記載された全ての記載内容を援用するものである。 This application claims priority based on Japanese Patent Application No. 2015-104195 filed on May 22, 2015, and incorporates all the content described in the Japanese application.
　半導体装置の製造プロセスなどにおいて、洗浄溶液を用いた半導体の洗浄が実施される。たとえば、半導体装置の製造プロセスでは、半導体基板の表面に付着したＦｅ（鉄）、Ｎｉ（ニッケル）、Ｃｕ（銅）、Ｚｎ（亜鉛）などの金属不純物を除去する目的で、洗浄溶液を用いた洗浄が実施される。このような洗浄を実施するための洗浄装置において、被処理物および洗浄溶液を大気に晒さない構造が提案されている（たとえば、特開２００１－１１０７７３号公報（特許文献１）参照）。 In semiconductor device manufacturing processes, etc., semiconductor cleaning using a cleaning solution is performed. For example, in a semiconductor device manufacturing process, a cleaning solution is used for the purpose of removing metal impurities such as Fe (iron), Ni (nickel), Cu (copper), and Zn (zinc) attached to the surface of a semiconductor substrate. Washing is performed. In a cleaning apparatus for performing such cleaning, a structure in which the object to be processed and the cleaning solution are not exposed to the atmosphere has been proposed (see, for example, Japanese Patent Application Laid-Open No. 2001-110773 (Patent Document 1)).
特開２００１－１１０７７３号公報JP 2001-110773 A
　本発明に従った洗浄装置は、洗浄溶液により半導体を洗浄するための洗浄装置である。この洗浄装置は、洗浄溶液を保持する洗浄溶液保持部と、洗浄溶液保持部に接続される液化部と、を備える。気化することにより洗浄溶液保持部から液化部に到達した洗浄溶液が液化部において液化されて洗浄溶液保持部に流入するように液化部が設置される。 The cleaning device according to the present invention is a cleaning device for cleaning a semiconductor with a cleaning solution. The cleaning apparatus includes a cleaning solution holding unit that holds a cleaning solution, and a liquefaction unit connected to the cleaning solution holding unit. The liquefying unit is installed so that the cleaning solution that has reached the liquefying unit from the cleaning solution holding unit by being vaporized is liquefied in the liquefying unit and flows into the cleaning solution holding unit.
洗浄装置の構造を示す概略図である。It is the schematic which shows the structure of a washing | cleaning apparatus. 洗浄方法の手順の概略を示すフローチャートである。It is a flowchart which shows the outline of the procedure of a washing | cleaning method. 経過日数と洗浄溶液の濃度および蒸発率との関係を示す図である。It is a figure which shows the relationship between elapsed days, the density | concentration of a cleaning solution, and an evaporation rate.
　［本開示が解決しようとする課題］
　被処理物および洗浄溶液を大気に晒さない構造が採用された場合でも、たとえば特許文献１の図２等に示されるように、洗浄溶液を保持する洗浄溶液保持部（液体貯留槽３０）には排気管が接続される。そのため、気化した洗浄溶液の溶媒および溶質の一方または両方が、排気管から外部へと排出される。その結果、時間の経過とともに洗浄溶液の濃度が変化する。洗浄溶液の濃度が高い場合、このような濃度の変化は大きな問題とならない。そのため、このような濃度変化は、従来は問題として認識されていなかった。しかし、本発明者らの検討によれば、洗浄溶液の濃度が低い場合でも（たとえば洗浄溶液が６５質量％以下の硫酸を含み、残部が水および不可避的不純物からなるものである場合でも）、洗浄溶液として採用可能である。そして、洗浄溶液の濃度が低い場合、上記濃度の変化が洗浄溶液の特性に及ぼす影響が大きい。そのため、上記濃度の変化により所望の洗浄溶液の特性が維持できないという問題が生じ得ることを本発明者らは見出した。 [Problems to be solved by the present disclosure]
Even when a structure in which the object to be processed and the cleaning solution are not exposed to the atmosphere is adopted, as shown in FIG. An exhaust pipe is connected. Therefore, one or both of the solvent and the solute of the vaporized cleaning solution are discharged from the exhaust pipe to the outside. As a result, the concentration of the cleaning solution changes with time. When the concentration of the cleaning solution is high, such a change in concentration is not a big problem. For this reason, such a change in density has not been recognized as a problem in the past. However, according to the study by the present inventors, even when the concentration of the cleaning solution is low (for example, even when the cleaning solution contains 65% by mass or less of sulfuric acid and the balance is made of water and inevitable impurities) It can be employed as a cleaning solution. And when the density | concentration of a cleaning solution is low, the influence which the change of the said density | concentration has on the characteristic of a cleaning solution is large. For this reason, the present inventors have found that the problem that the characteristics of the desired cleaning solution cannot be maintained due to the change in the concentration can occur.
　そこで、洗浄溶液の濃度の変化を抑制することが可能な洗浄装置を提供することを目的の１つとする。 Therefore, an object is to provide a cleaning apparatus capable of suppressing the change in the concentration of the cleaning solution.
　［本開示の効果］
　本開示の洗浄装置によれば、洗浄溶液の濃度の変化を抑制することができる。 [Effects of the present disclosure]
According to the cleaning device of the present disclosure, a change in the concentration of the cleaning solution can be suppressed.
　［本願発明の実施形態の説明］
　最初に本願発明の実施態様を列記して説明する。本願の洗浄装置は、洗浄溶液により半導体を洗浄するための洗浄装置である。この洗浄装置は、洗浄溶液を保持する洗浄溶液保持部と、洗浄溶液保持部に接続される液化部と、を備える。気化することにより洗浄溶液保持部から液化部に到達した洗浄溶液が液化部において液化されて洗浄溶液保持部に流入するように液化部が設置される。 [Description of Embodiment of Present Invention]
First, embodiments of the present invention will be listed and described. The cleaning apparatus of the present application is a cleaning apparatus for cleaning a semiconductor with a cleaning solution. The cleaning apparatus includes a cleaning solution holding unit that holds a cleaning solution, and a liquefaction unit connected to the cleaning solution holding unit. The liquefying unit is installed so that the cleaning solution that has reached the liquefying unit from the cleaning solution holding unit by being vaporized is liquefied in the liquefying unit and flows into the cleaning solution holding unit.
　本願の洗浄装置においては、気化することにより洗浄溶液保持部から液化部に到達した洗浄溶液が液化部において液化されて洗浄溶液保持部に流入するように液化部が設置される。そのため、気化した洗浄溶液の溶媒や溶質が、外部へと排出されることが抑制される。その結果、本願の洗浄装置によれば、洗浄溶液の濃度の変化を抑制することができる。 In the cleaning apparatus of the present application, the liquefaction unit is installed so that the cleaning solution that has reached the liquefaction unit from the cleaning solution holding unit by being vaporized is liquefied in the liquefaction unit and flows into the cleaning solution holding unit. Therefore, it is possible to prevent the solvent and solute of the vaporized cleaning solution from being discharged to the outside. As a result, according to the cleaning apparatus of the present application, a change in the concentration of the cleaning solution can be suppressed.
　上記洗浄装置において、液化部は、液化部内において液化した洗浄溶液が重力によって洗浄溶液保持部内に流入可能なように設置されてもよい。このようにすることにより、別途動力源を設けることなく、液化部内において液化した洗浄溶液を洗浄溶液保持部内へと流入させることができる。 In the cleaning device, the liquefying unit may be installed so that the cleaning solution liquefied in the liquefying unit can flow into the cleaning solution holding unit by gravity. By doing so, the cleaning solution liquefied in the liquefaction unit can be flowed into the cleaning solution holding unit without providing a separate power source.
　上記洗浄装置は、洗浄溶液保持部内に保持される洗浄溶液を加熱する加熱部をさらに備えていてもよい。加熱部により洗浄溶液が加熱される場合、洗浄溶液の気化（溶媒および溶質の一方または両方の気化）が進行しやすくなる。そのため、気化した洗浄溶液の外部への排出を抑制可能な本願の洗浄装置の採用が有効である。 The cleaning apparatus may further include a heating unit that heats the cleaning solution held in the cleaning solution holding unit. When the cleaning solution is heated by the heating unit, vaporization of the cleaning solution (evaporation of one or both of the solvent and the solute) easily proceeds. Therefore, it is effective to employ the cleaning device of the present application that can suppress the discharge of the vaporized cleaning solution to the outside.
　上記洗浄装置は、液化部内の空間を冷却する冷却部をさらに備えていてもよい。このようにすることにより、液化部内に進入した洗浄溶液を効率よく液化させることができる。その結果、気化した洗浄溶液の溶媒や溶質が、外部へと排出されることが一層抑制される。 The cleaning device may further include a cooling unit that cools the space in the liquefying unit. By doing in this way, the washing | cleaning solution which approached into the liquefying part can be liquefied efficiently. As a result, it is further suppressed that the solvent and solute of the vaporized cleaning solution are discharged to the outside.
　上記洗浄装置は、液化部および洗浄溶液保持部の少なくともいずれか一方に接続される給気管をさらに備えていてもよい。このようにすることにより、給気管から適切な気体を液化部や洗浄溶液保持部に供給し、液化部や洗浄溶液保持部内の圧力を調整することができる。その結果、液化部や洗浄溶液保持部の内部の圧力が低下して外部から気体が侵入することを抑制することができる。 The cleaning device may further include an air supply pipe connected to at least one of the liquefying unit and the cleaning solution holding unit. By doing in this way, suitable gas can be supplied to a liquefying part and a washing | cleaning solution holding part from an air supply pipe, and the pressure in a liquefaction part or a washing | cleaning solution holding part can be adjusted. As a result, it is possible to prevent the gas from entering from the outside due to a decrease in the pressure inside the liquefying section or the cleaning solution holding section.
　上記洗浄装置は、液化部または洗浄溶液保持部に接続される排気管と、排気管に設置されるバルブと、をさらに備えていてもよい。排気管にバルブを設置することにより、気化した洗浄溶液の溶媒や溶質が排気管から外部に排出されることを抑制することができる。 The cleaning device may further include an exhaust pipe connected to the liquefaction unit or the cleaning solution holding unit, and a valve installed in the exhaust pipe. By installing a valve in the exhaust pipe, it is possible to prevent the solvent or solute of the vaporized cleaning solution from being discharged from the exhaust pipe to the outside.
　上記洗浄装置において、排気管は、液化部に接続されてもよい。このようにすることにより、気化した洗浄溶液の溶媒や溶質が排気管に到達する前に液化部を通過する。そのため、気化した洗浄溶液の溶媒や溶質が排気管から外部に排出されることを一層確実に抑制することができる。 In the above cleaning device, the exhaust pipe may be connected to the liquefaction unit. By doing so, the solvent or solute of the vaporized cleaning solution passes through the liquefying section before reaching the exhaust pipe. Therefore, it can suppress more reliably that the solvent and solute of the vaporized cleaning solution are discharged from the exhaust pipe to the outside.
　上記洗浄装置において、排気管は、液化部の、冷却部により冷却される領域から見て洗浄溶液保持部に接続される側とは反対側に接続されていてもよい。このようにすることにより、気化した洗浄溶液の溶媒や溶質が排気管に到達する前に、液化部において冷却部により冷却される領域を通過する。そのため、気化した洗浄溶液の溶媒や溶質が排気管から外部に排出されることを一層確実に抑制することができる。 In the above cleaning apparatus, the exhaust pipe may be connected to the side of the liquefying unit opposite to the side connected to the cleaning solution holding unit as viewed from the region cooled by the cooling unit. By doing so, before the solvent or solute of the vaporized cleaning solution reaches the exhaust pipe, it passes through the region cooled by the cooling unit in the liquefaction unit. Therefore, it can suppress more reliably that the solvent and solute of the vaporized cleaning solution are discharged from the exhaust pipe to the outside.
　上記洗浄装置は、液化部および洗浄溶液保持部の少なくともいずれか一方に接続される圧力測定部をさらに備えていてもよい。このようにすることにより、液化部や洗浄溶液保持部の内部の圧力を把握することができる。 The cleaning apparatus may further include a pressure measurement unit connected to at least one of the liquefaction unit and the cleaning solution holding unit. By doing in this way, the pressure inside a liquefying part and a washing solution holding part can be grasped.
　［本願発明の実施形態の詳細］
　次に、本発明にかかる洗浄装置の一実施の形態を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。 [Details of the embodiment of the present invention]
Next, an embodiment of a cleaning apparatus according to the present invention will be described below with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.
　図１を参照して、本実施の形態における洗浄装置１は、洗浄溶液９２により半導体基板９１を洗浄するための洗浄装置である。半導体基板９１を構成する半導体は、たとえばＩＩＩ－Ｖ族化合物半導体である。ＩＩＩ－Ｖ族化合物半導体は、たとえばＶ族元素としてＡｓ（砒素）、Ｐ（リン）、Ｓｂ（アンチモン）およびＮ（窒素）からなる群から選択される少なくとも１つの元素を含む窒化ガリウム系半導体であってもよい。窒化ガリウム系半導体を構成するＩＩＩ族元素としては、Ｇａ（ガリウム）のほか、Ｉｎ（インジウム）、Ａｌ（アルミニウム）などを採用することができる。窒化ガリウム系半導体は、たとえばＧａＵ１ＩｎＵ２Ａｌ１－Ｕ１－Ｕ２ＡｓＶ１ＰＶ２ＳｂＶ３Ｎ１－Ｖ１－Ｖ２－Ｖ３（Ｕ１は０を超え１以下、Ｕ２、Ｖ１、Ｖ２およびＶ３は０以上１以下、Ｕ１＋Ｕ２は０を超え１以下、Ｖ１＋Ｖ２＋Ｖ３は０以上１以下）と表示できるものであってもよい。窒化ガリウム系半導体は、たとえばＧａＮである。半導体基板９１は、半導体からなる基板であってもよいし、基板上に絶縁領域として機能する絶縁体、電極または配線として機能する金属などの導電体が形成されたものであってもよい。 Referring to FIG. 1, cleaning device 1 in the present embodiment is a cleaning device for cleaning semiconductor substrate 91 with cleaning solution 92. The semiconductor composing the semiconductor substrate 91 is, for example, a III-V group compound semiconductor. The III-V compound semiconductor is, for example, a gallium nitride based semiconductor containing at least one element selected from the group consisting of As (arsenic), P (phosphorus), Sb (antimony), and N (nitrogen) as a group V element. There may be. In addition to Ga (gallium), In (indium), Al (aluminum), or the like can be used as a group III element constituting the gallium nitride semiconductor. The gallium nitride semiconductor is, for example, Ga U1 In U2 Al 1-U1-U2 As V1 P V2 Sb V3 N 1-V1-V2-V3 (U1 exceeds 0 and 1 or less, U2, V1, V2 and V3 are 0 or more 1 or less, U1 + U2 may exceed 0 and be 1 or less, and V1 + V2 + V3 may be 0 or more and 1 or less. The gallium nitride based semiconductor is, for example, GaN. The semiconductor substrate 91 may be a substrate made of a semiconductor, or may be one in which a conductor such as an insulator functioning as an insulating region, a metal functioning as an electrode or a wiring is formed on the substrate.
　洗浄溶液９２としては、酸性、アルカリ性、中性の種々の溶液を採用することができる。本実施の形態においては、洗浄溶液９２は、純水と、６５質量％以下の硫酸とを含む。洗浄溶液９２は、６５質量％以下の硫酸を含み、残部が水および不可避的不純物からなる。洗浄溶液９２の水素イオン濃度ｐＨは２以下である。洗浄溶液９２の酸化還元電位は０．６Ｖ以上である。洗浄溶液９２は、純水と、５０質量％以下の硫酸とを含むものであってもよい。洗浄溶液９２は、５０質量％以下の硫酸を含み、残部が水および不可避的不純物からなっていてもよい。 As the cleaning solution 92, various acidic, alkaline, and neutral solutions can be employed. In the present embodiment, the cleaning solution 92 includes pure water and 65 mass% or less sulfuric acid. The cleaning solution 92 contains 65% by mass or less of sulfuric acid, and the balance consists of water and inevitable impurities. The hydrogen ion concentration pH of the cleaning solution 92 is 2 or less. The oxidation-reduction potential of the cleaning solution 92 is 0.6V or more. The cleaning solution 92 may contain pure water and 50% by mass or less of sulfuric acid. The cleaning solution 92 may contain 50% by mass or less of sulfuric acid, and the balance may be made of water and inevitable impurities.
　図１を参照して、洗浄装置１は、洗浄溶液９２を保持する洗浄溶液保持部としての溶液槽１０と、溶液槽１０に接続される液化部２０とを備えている。溶液槽１０は、たとえば端面として上壁１０Ａおよび底壁１０Ｂを有する円筒状の形状を有している。上壁１０Ａは、洗浄装置１を設置した状態において、鉛直方向上側の端面に対応する溶液槽１０の壁である。底壁１０Ｂは、洗浄装置１を設置した状態において、鉛直方向下側の端面に対応する溶液槽１０の壁である。溶液槽１０の上壁１０Ａには、接続部としての開口部１１が形成されている。 1, the cleaning apparatus 1 includes a solution tank 10 as a cleaning solution holding unit that holds a cleaning solution 92, and a liquefaction unit 20 connected to the solution tank 10. The solution tank 10 has, for example, a cylindrical shape having an upper wall 10A and a bottom wall 10B as end surfaces. The upper wall 10A is a wall of the solution tank 10 corresponding to the upper end face in the vertical direction in the state where the cleaning device 1 is installed. The bottom wall 10B is a wall of the solution tank 10 corresponding to the end surface on the lower side in the vertical direction in the state where the cleaning device 1 is installed. An opening 11 as a connection portion is formed in the upper wall 10 </ b> A of the solution tank 10.
　溶液槽１０の開口部１１には、接続部材としての接続管５１が接続されている。接続管５１は、両端面が開口した円筒状の形状を有している。接続管５１の一方の端部は溶液槽１０に接続されている。接続管５１の他方の端部は液化部２０に接続されている。溶液槽１０と液化部２０とは、接続管５１により接続されている。 A connecting pipe 51 as a connecting member is connected to the opening 11 of the solution tank 10. The connecting pipe 51 has a cylindrical shape with both end faces opened. One end of the connection pipe 51 is connected to the solution tank 10. The other end of the connecting pipe 51 is connected to the liquefying unit 20. The solution tank 10 and the liquefying unit 20 are connected by a connecting pipe 51.
　液化部２０は円筒状の形状を有する本体部２１と、本体部２１に接続され、円錐台状の形状を有する集液部２２とを含んでいる。本体部２１は、一方の端部に対応する領域に端面として上壁２１Ａを有している。本体部２１の他方の端部は開口している。本体部２１の他方の端部は集液部２２に接続されている。本体部２１に対応する円筒の中心軸と集液部２２に対応する円錐台の中心軸とは一致する。 The liquefying part 20 includes a main body part 21 having a cylindrical shape and a liquid collecting part 22 connected to the main body part 21 and having a truncated cone shape. The main body 21 has an upper wall 21A as an end surface in a region corresponding to one end. The other end of the main body 21 is open. The other end of the main body portion 21 is connected to the liquid collecting portion 22. The central axis of the cylinder corresponding to the main body portion 21 coincides with the central axis of the truncated cone corresponding to the liquid collecting portion 22.
　集液部２２は、円錐台の直径が大きい側の端面に対応する領域において本体部２１に接続されている。集液部２２は、直径が小さい側の端面に対応する領域において接続管５１に接続されている。集液部２２の直径が大きい側の端面に対応する領域と、本体部２１の他方の端部に対応する領域とは同径の円形形状を有している。集液部２２の直径が小さい側の端面に対応する領域と、接続管５１の他方の端部に対応する領域とは同径の円形形状を有している。集液部２２の内部空間の軸方向に垂直な断面積は、接続管５１に近づくに従って小さくなっている。洗浄装置１を設置した状態において、集液部２２の直径が大きい側の端面が鉛直方向上側、直径の小さい側の端面が鉛直方向下側となるように、液化部２０は設置されている。洗浄装置１を設置した状態において、集液部２２の内壁面の高さは接続管５１に近づくにしたがって低くなっている。液化部２０は、液化部２０内において液化した洗浄溶液９２が重力によって接続管５１へと流入するように設置されている。液化部２０内において液化し、接続管５１に流入した洗浄溶液９２は、重力によって溶液槽１０内に流入する。 The liquid collection part 22 is connected to the main body part 21 in a region corresponding to the end face of the truncated cone having the larger diameter. The liquid collection unit 22 is connected to the connection pipe 51 in a region corresponding to the end surface on the side having a smaller diameter. The region corresponding to the end surface of the liquid collection portion 22 on the side having the larger diameter and the region corresponding to the other end portion of the main body portion 21 have a circular shape with the same diameter. The region corresponding to the end surface on the side where the diameter of the liquid collecting portion 22 is small and the region corresponding to the other end portion of the connection pipe 51 have a circular shape with the same diameter. The cross-sectional area perpendicular to the axial direction of the internal space of the liquid collecting part 22 decreases as the connecting pipe 51 is approached. In the state in which the cleaning device 1 is installed, the liquefying unit 20 is installed so that the end surface of the liquid collection unit 22 on the larger diameter side is the upper side in the vertical direction and the end surface on the smaller diameter side is the lower side in the vertical direction. In the state in which the cleaning device 1 is installed, the height of the inner wall surface of the liquid collection unit 22 decreases as the connection pipe 51 is approached. The liquefying unit 20 is installed so that the cleaning solution 92 liquefied in the liquefying unit 20 flows into the connection pipe 51 by gravity. The cleaning solution 92 liquefied in the liquefying unit 20 and flows into the connection pipe 51 flows into the solution tank 10 by gravity.
　洗浄装置１は、加熱部としてのヒータ３１を備えている。ヒータ３１は、本願の洗浄装置において必須の構成ではないが、これを備えることにより洗浄溶液の温度を容易に調整することが可能となる。ヒータ３１は、溶液槽１０の外周面に面するように配置されている。ヒータ３１は、溶液槽１０の外周面に接触するように配置されていてもよい。ヒータ３１は、電源（図示しない）に接続されている。電源から供給される電力により、ヒータ３１は溶液槽１０の壁面（外周面）を加熱する。その結果、溶液槽１０に保持される洗浄溶液９２が所望の温度に加熱される。なお、ヒータ３１は、外周面に面するように配置されることに代えて、または外周面に面するように配置されることに加えて、底壁１０Ｂに面するように配置されてもよい。また、ヒータ３１は、上記配置に代えて、または上記配置に加えて溶液槽１０の内部に配置されてもよい。 The cleaning apparatus 1 includes a heater 31 as a heating unit. Although the heater 31 is not an essential component in the cleaning apparatus of the present application, the heater 31 can easily adjust the temperature of the cleaning solution. The heater 31 is disposed so as to face the outer peripheral surface of the solution tank 10. The heater 31 may be disposed so as to contact the outer peripheral surface of the solution tank 10. The heater 31 is connected to a power source (not shown). The heater 31 heats the wall surface (outer peripheral surface) of the solution tank 10 with electric power supplied from the power source. As a result, the cleaning solution 92 held in the solution tank 10 is heated to a desired temperature. The heater 31 may be arranged so as to face the bottom wall 10B instead of being arranged so as to face the outer peripheral surface or in addition to being arranged so as to face the outer peripheral surface. . Further, the heater 31 may be arranged inside the solution tank 10 instead of or in addition to the above arrangement.
　洗浄装置１は、冷却部としての冷却水流路３４を備えている。冷却水流路３４は、本願の洗浄装置において必須の構成ではないが、これを備えることにより気化した洗浄溶液９２を液化させることが容易となる。冷却水流路３４は、液化部２０の本体部２１に設置されている。冷却水流路３４は、本体部２１の外周面に接触して配置されている。冷却水流路３４は、本体部２１の外周面を取り囲むように配置されている。冷却水流路３４には、冷却液配管としての冷却水配管７９が接続されている。冷却水配管７９は、冷却液供給部としての純水製造装置３に接続されている。純水製造装置３において製造された純水が、冷却水として冷却水配管７９を介して冷却水流路３４に供給される。冷却水である純水は、たとえばポンプ（図示しない）により冷却水流路３４へと送られる。 The cleaning device 1 includes a cooling water flow path 34 as a cooling unit. Although the cooling water flow path 34 is not an essential component in the cleaning device of the present application, it becomes easy to liquefy the cleaning solution 92 vaporized by providing this. The cooling water channel 34 is installed in the main body 21 of the liquefying unit 20. The cooling water channel 34 is disposed in contact with the outer peripheral surface of the main body 21. The cooling water channel 34 is disposed so as to surround the outer peripheral surface of the main body 21. A cooling water pipe 79 as a cooling liquid pipe is connected to the cooling water flow path 34. The cooling water pipe 79 is connected to the pure water manufacturing apparatus 3 as a coolant supply unit. Pure water produced in the pure water production apparatus 3 is supplied to the cooling water flow path 34 via the cooling water pipe 79 as cooling water. The pure water that is the cooling water is sent to the cooling water flow path 34 by, for example, a pump (not shown).
　洗浄装置１は、溶液槽１０に接続される溶質流路としての配管７５を備えている。配管７５は、溶質保持部２に接続されている。溶質保持部２には、洗浄溶液９２の溶質が保持されている。本実施の形態では、硫酸が保持される。溶質保持部２に保持される硫酸が、配管７５を介して溶液槽１０に供給可能となっている。 The cleaning device 1 includes a pipe 75 as a solute flow path connected to the solution tank 10. The pipe 75 is connected to the solute holding unit 2. The solute holder 2 holds the solute of the cleaning solution 92. In the present embodiment, sulfuric acid is retained. Sulfuric acid retained in the solute retaining unit 2 can be supplied to the solution tank 10 via the pipe 75.
　洗浄装置１は、溶液槽１０に接続される溶媒流路としての配管７４を備えている。配管７４は、溶媒供給部としての純水製造装置３に接続されている。純水製造装置３において製造された純水が、配管７４を介して溶液槽１０に供給可能となっている。本実施の形態において、純水製造装置３は、溶媒供給部および冷却液供給部の両方として機能する。 The cleaning apparatus 1 includes a pipe 74 as a solvent flow path connected to the solution tank 10. The pipe 74 is connected to the pure water production apparatus 3 as a solvent supply unit. The pure water produced in the pure water production apparatus 3 can be supplied to the solution tank 10 via the pipe 74. In the present embodiment, the pure water production apparatus 3 functions as both a solvent supply unit and a coolant supply unit.
　洗浄装置１は、液化部２０に接続される排気管７７Ａと、排気管７７Ａに設置されるバルブ３３とを備えている。排気管７７Ａにバルブ３３を設置することは本願の洗浄装置において必須の構成ではないが、これを設置することにより、気化した洗浄溶液９２の溶媒や溶質が排気管７７Ａから外部に排出されることをより確実に抑制することができる。排気管７７Ａは、本体部２１の上壁２１Ａに接続されている。排気管７７Ａは、液化部２０の、冷却水流路３４により冷却される領域から見て溶液槽１０に接続される側（接続管５１の側）とは反対側に接続されている。排気管７７Ａは、排気処理装置６に接続されている。 The cleaning apparatus 1 includes an exhaust pipe 77A connected to the liquefaction unit 20 and a valve 33 installed in the exhaust pipe 77A. Installation of the valve 33 in the exhaust pipe 77A is not an essential configuration in the cleaning apparatus of the present application, but by installing this, the solvent or solute of the vaporized cleaning solution 92 is discharged from the exhaust pipe 77A to the outside. Can be more reliably suppressed. The exhaust pipe 77A is connected to the upper wall 21A of the main body 21. The exhaust pipe 77 </ b> A is connected to the side of the liquefying unit 20 opposite to the side connected to the solution tank 10 (the side of the connection pipe 51) when viewed from the region cooled by the cooling water flow path 34. The exhaust pipe 77 </ b> A is connected to the exhaust treatment device 6.
　洗浄装置１は、液化部２０に接続される圧力測定部としての圧力計３２を備える。圧力計３２の設置は本願の洗浄装置において必須の構成ではないが、これを設置することにより、液化部２０の内部の圧力を把握することができる。 The cleaning apparatus 1 includes a pressure gauge 32 as a pressure measuring unit connected to the liquefying unit 20. Although the installation of the pressure gauge 32 is not an essential component in the cleaning apparatus of the present application, the pressure inside the liquefying unit 20 can be grasped by installing this.
　洗浄装置１は、溶液槽１０に接続される給気管７８を備えている。給気管７８は本願の洗浄装置において必須の構成ではないが、洗浄装置１がこれを備えることにより、給気管７８から適切な気体を溶液槽１０に供給し、溶液槽１０内の圧力を調整することができる。給気管７８には、バルブ３５が設置される。給気管７８には、不活性ガスが流れる。不活性ガスとしては、たとえば窒素、アルゴンなどを採用することができる。給気管７８は、窒素、アルゴンなどの不活性ガスを保持する不活性ガス保持部４に接続される。溶液槽１０の内部空間に存在する気体が給気管７８から供給される不活性ガスにより置換された後、溶液槽１０内に洗浄溶液９２が準備される。 The cleaning device 1 includes an air supply pipe 78 connected to the solution tank 10. The supply pipe 78 is not an essential component in the cleaning apparatus of the present application, but the cleaning apparatus 1 includes the supply pipe 78 to supply an appropriate gas from the supply pipe 78 to the solution tank 10 and adjust the pressure in the solution tank 10. be able to. A valve 35 is installed in the air supply pipe 78. An inert gas flows through the supply pipe 78. As the inert gas, for example, nitrogen, argon or the like can be employed. The supply pipe 78 is connected to an inert gas holding unit 4 that holds an inert gas such as nitrogen or argon. After the gas existing in the internal space of the solution tank 10 is replaced by the inert gas supplied from the air supply pipe 78, the cleaning solution 92 is prepared in the solution tank 10.
　洗浄装置１は、円盤状（皿状）の形状を有し、被処理物である半導体基板９１を保持する保持部４１と、保持部４１に接続され、保持部４１の中心軸に沿って延在し、保持部４１を支持する軸部４２と、軸部４２に接続され、軸部４２を介して保持部４１を回転可能に支持する回転駆動部４４と、保持部４１および保持部４１に保持される半導体基板９１を取り囲むことが可能な形状を有するカップ部４５と、カップ部４５に接続され、カップ部４５を昇降可能に支持する昇降部４３とを備える。保持部４１は、たとえば半導体基板９１を真空吸着により保持する。回転駆動部４４は、たとえば電源（図示しない）に接続されたモータである。カップ部４５は、半導体基板９１を取り囲むことにより、半導体基板９１の洗浄に用いられる洗浄溶液９２が飛散すること等を抑制する。 The cleaning device 1 has a disk shape (dish shape), a holding unit 41 that holds a semiconductor substrate 91 that is an object to be processed, and is connected to the holding unit 41 and extends along the central axis of the holding unit 41. A shaft portion 42 that supports the holding portion 41, a rotation drive portion 44 that is connected to the shaft portion 42 and rotatably supports the holding portion 41 via the shaft portion 42, and the holding portion 41 and the holding portion 41. The cup part 45 has a shape that can surround the semiconductor substrate 91 to be held, and the elevating part 43 that is connected to the cup part 45 and supports the cup part 45 so that it can be raised and lowered. The holding unit 41 holds, for example, the semiconductor substrate 91 by vacuum suction. The rotation drive unit 44 is, for example, a motor connected to a power source (not shown). The cup portion 45 surrounds the semiconductor substrate 91, thereby preventing the cleaning solution 92 used for cleaning the semiconductor substrate 91 from being scattered.
　洗浄装置１は、カップ部４５に接続される配管７６を備える。配管７６は廃液処理装置５に接続される。また、配管７６は、排気管７７Ｂを介して排気処理装置６に接続される。配管７６に進入した排液は廃液処理装置５において処理される。配管７６に進入した排気は、排気処理装置６において処理される。 The cleaning device 1 includes a pipe 76 connected to the cup portion 45. The pipe 76 is connected to the waste liquid treatment apparatus 5. The pipe 76 is connected to the exhaust treatment device 6 via the exhaust pipe 77B. The waste liquid that has entered the pipe 76 is processed in the waste liquid processing apparatus 5. The exhaust gas that has entered the pipe 76 is processed by the exhaust gas processing device 6.
　洗浄装置は、筐体１Ａと、筐体１Ａと排気管７７Ｂとを接続する排気管７７Ｃとを備える。筐体１Ａ内からの排気は、排気管７７Ｃおよび排気管７７Ｂを介して排気処理装置６へと運ばれ、排気処理装置６において処理される。 The cleaning apparatus includes a housing 1A and an exhaust pipe 77C that connects the housing 1A and the exhaust pipe 77B. Exhaust gas from inside the housing 1A is conveyed to the exhaust treatment device 6 via the exhaust pipe 77C and the exhaust pipe 77B, and is processed in the exhaust treatment device 6.
　洗浄装置１は、第１ノズル６１と、第２ノズル６２と、第３ノズル６３とを備えている。第１ノズル６１、第２ノズル６２および第３ノズル６３は、保持部４１に保持される半導体基板９１に面するように配置される。第１ノズル６１は、配管７１を介して溶液槽１０に接続される。第２ノズル６２は、配管７２を介して純水製造装置３に接続される。第３ノズル６３は、配管７３を介して不活性ガス保持部４に接続される。 The cleaning apparatus 1 includes a first nozzle 61, a second nozzle 62, and a third nozzle 63. The first nozzle 61, the second nozzle 62 and the third nozzle 63 are arranged so as to face the semiconductor substrate 91 held by the holding unit 41. The first nozzle 61 is connected to the solution tank 10 via a pipe 71. The second nozzle 62 is connected to the pure water production apparatus 3 via a pipe 72. The third nozzle 63 is connected to the inert gas holding unit 4 via the pipe 73.
　次に、図１および図２を参照して、上記洗浄装置１を用いた半導体基板９１の洗浄方法について説明する。図２を参照して、本実施の形態における半導体基板９１の洗浄方法では、まず被処理物が準備される（Ｓ１１）。この工程（Ｓ１１）においては、被処理物である半導体基板９１が準備される。半導体基板９１を構成する半導体は、たとえば窒化ガリウム系半導体である。半導体基板９１は、窒化ガリウム系半導体からなる基板であってもよいし、基板上に絶縁領域として機能する絶縁体、電極または配線として機能する金属などの導電体が形成されたものであってもよい。窒化ガリウム系半導体からなる基板は、窒化ガリウム系半導体からなるインゴットをスライスすることにより得られる。インゴットをスライスすることにより得られた基板上にエピタキシャル成長により形成された半導体層が形成されていてもよい。 Next, with reference to FIG. 1 and FIG. 2, a method for cleaning the semiconductor substrate 91 using the cleaning apparatus 1 will be described. Referring to FIG. 2, in the method for cleaning semiconductor substrate 91 in the present embodiment, first, an object to be processed is prepared (S11). In this step (S11), a semiconductor substrate 91 that is an object to be processed is prepared. A semiconductor constituting the semiconductor substrate 91 is, for example, a gallium nitride semiconductor. The semiconductor substrate 91 may be a substrate made of a gallium nitride-based semiconductor, or may be one in which a conductor such as an insulator functioning as an insulating region, a metal functioning as an electrode or a wiring is formed on the substrate. Good. A substrate made of a gallium nitride semiconductor can be obtained by slicing an ingot made of a gallium nitride semiconductor. A semiconductor layer formed by epitaxial growth may be formed on a substrate obtained by slicing an ingot.
　次に、工程（Ｓ１１）において準備された被処理物である半導体基板９１を、洗浄装置１の保持部４１にセットする（Ｓ１２）。具体的には、図１を参照して、まず半導体基板９１のセットを容易にする目的で、昇降部４３を動作させてカップ部４５を降下させる。これにより、保持部４１がカップ部４５に取り囲まれる空間から離脱した状態となる。次に、半導体基板９１を保持部４１上に載置する。載置された半導体基板９１は、たとえば真空吸着により保持される。その後、昇降部４３を動作させてカップ部４５を上昇させる。これにより、保持部４１および保持部４１により保持される半導体基板９１がカップ部４５に取り囲まれる状態となる。 Next, the semiconductor substrate 91 that is the object to be processed prepared in the step (S11) is set in the holding unit 41 of the cleaning apparatus 1 (S12). Specifically, referring to FIG. 1, first, for the purpose of facilitating the setting of the semiconductor substrate 91, the elevating unit 43 is operated to lower the cup unit 45. As a result, the holding portion 41 is separated from the space surrounded by the cup portion 45. Next, the semiconductor substrate 91 is placed on the holding unit 41. The placed semiconductor substrate 91 is held, for example, by vacuum suction. Then, the raising / lowering part 43 is operated and the cup part 45 is raised. As a result, the holding portion 41 and the semiconductor substrate 91 held by the holding portion 41 are surrounded by the cup portion 45.
　次に、工程（Ｓ１２）において保持部４１にセットされた半導体基板９１を洗浄溶液９２にて洗浄する（Ｓ１３）。上述のように、溶液槽１０において保持される洗浄溶液９２は、６５質量％以下の硫酸を含み、残部が純水および不可避的不純物からなる。洗浄溶液９２は、溶質保持部２から溶液槽１０に供給される硫酸と、純水製造装置３から溶液槽１０に供給される純水とにより、所望の濃度に調整される。溶液槽１０内の洗浄溶液９２は、ヒータ３１により加熱される。洗浄溶液９２が半導体基板９１に到達する時点における温度が７０℃以上となるように、洗浄溶液９２が加熱される。洗浄溶液９２が、５０質量％以下の硫酸を含み、残部が純水および不可避的不純物からなる場合、洗浄溶液９２が半導体基板９１に到達する時点における温度が８０℃以上となるように、洗浄溶液９２が加熱される。 Next, in step (S12), the semiconductor substrate 91 set on the holding unit 41 is cleaned with the cleaning solution 92 (S13). As described above, the cleaning solution 92 held in the solution tank 10 contains 65% by mass or less of sulfuric acid, and the balance is composed of pure water and inevitable impurities. The cleaning solution 92 is adjusted to a desired concentration by sulfuric acid supplied from the solute holding unit 2 to the solution tank 10 and pure water supplied from the pure water production apparatus 3 to the solution tank 10. The cleaning solution 92 in the solution tank 10 is heated by the heater 31. The cleaning solution 92 is heated so that the temperature at which the cleaning solution 92 reaches the semiconductor substrate 91 is 70 ° C. or higher. When the cleaning solution 92 contains 50% by mass or less of sulfuric acid and the balance is composed of pure water and unavoidable impurities, the cleaning solution 92 is set so that the temperature when the cleaning solution 92 reaches the semiconductor substrate 91 is 80 ° C. or higher. 92 is heated.
　保持部４１は、回転駆動部４４により駆動されて軸部４２を通る回転軸周りに回転する。これにより、保持部４１に保持される半導体基板９１が当該回転軸周りに回転する。このように半導体基板９１が回転している状態で、溶液槽１０に保持される洗浄溶液９２が配管７１を介して第１ノズル６１へと輸送される。そして、第１ノズル６１から矢印αに沿って洗浄溶液９２が吐出される。吐出された洗浄溶液９２は、半導体基板９１の表面（主面）に接触する。半導体基板９１の表面上の洗浄溶液９２は、半導体基板９１の回転による遠心力により、径方向外側へと流れる。これにより、半導体基板９１の表面が洗浄される。半導体基板９１の表面を流れて洗浄に寄与した洗浄溶液９２は、カップ部４５により集められ、配管７６を介して廃液として廃液処理装置５に送られる。そして、廃液処理装置５において、洗浄溶液９２に対する中和などの処理が実施される。また、カップ部４５から配管７６へと進入した気体は、排気管７７Ｂを介して排気処理装置６へと送られ、処理される。洗浄溶液９２による洗浄が十分に進行した後、溶液槽１０からの洗浄溶液９２の供給が停止され、工程（Ｓ１３）が終了する。 The holding unit 41 is driven by the rotation driving unit 44 and rotates around the rotation axis passing through the shaft unit 42. As a result, the semiconductor substrate 91 held by the holding unit 41 rotates around the rotation axis. In this state, the cleaning solution 92 held in the solution tank 10 is transported to the first nozzle 61 via the pipe 71 while the semiconductor substrate 91 is rotating. Then, the cleaning solution 92 is discharged from the first nozzle 61 along the arrow α. The discharged cleaning solution 92 contacts the surface (main surface) of the semiconductor substrate 91. The cleaning solution 92 on the surface of the semiconductor substrate 91 flows radially outward due to the centrifugal force generated by the rotation of the semiconductor substrate 91. Thereby, the surface of the semiconductor substrate 91 is cleaned. The cleaning solution 92 that has flowed through the surface of the semiconductor substrate 91 and contributed to the cleaning is collected by the cup portion 45 and sent to the waste liquid processing apparatus 5 as a waste liquid through the pipe 76. Then, in the waste liquid treatment apparatus 5, a treatment such as neutralization of the cleaning solution 92 is performed. Further, the gas that has entered the pipe 76 from the cup portion 45 is sent to the exhaust treatment device 6 through the exhaust pipe 77B and processed. After the cleaning with the cleaning solution 92 has sufficiently progressed, the supply of the cleaning solution 92 from the solution tank 10 is stopped, and the step (S13) ends.
　工程（Ｓ１３）が終了した後、半導体基板９１が純水にて洗浄される（Ｓ１４）。具体的には、工程（Ｓ１３）と同様に半導体基板９１が回転している状態で、純水製造装置３から純水が配管７２を介して第２ノズル６２へと輸送される。そして、第２ノズル６２から矢印βに沿って純水が吐出される。吐出された純水は、半導体基板９１の表面（主面）に接触する。半導体基板９１の表面上の純水は、半導体基板９１の回転による遠心力により、径方向外側へと流れる。これにより、半導体基板９１の表面に残存している洗浄溶液９２が除去される。半導体基板９１の表面を流れた純水は、カップ部４５により集められ、配管７６を介して廃液として廃液処理装置５に送られる。そして、廃液処理装置５において、中和などの処理が実施される。また、カップ部４５から配管７６へと進入した気体は、排気管７７Ｂを介して排気処理装置６へと送られ、処理される。純水による洗浄溶液９２の除去が十分に進行した後、純水製造装置３からの純水の供給が停止され、工程（Ｓ１４）が終了する。 After the step (S13) is completed, the semiconductor substrate 91 is washed with pure water (S14). Specifically, pure water is transported from the pure water production apparatus 3 to the second nozzle 62 via the pipe 72 while the semiconductor substrate 91 is rotating as in the step (S13). Then, pure water is discharged from the second nozzle 62 along the arrow β. The discharged pure water comes into contact with the surface (main surface) of the semiconductor substrate 91. The pure water on the surface of the semiconductor substrate 91 flows outward in the radial direction by the centrifugal force generated by the rotation of the semiconductor substrate 91. Thereby, the cleaning solution 92 remaining on the surface of the semiconductor substrate 91 is removed. The pure water that has flowed on the surface of the semiconductor substrate 91 is collected by the cup portion 45 and sent to the waste liquid treatment apparatus 5 as a waste liquid through the pipe 76. And in the waste liquid processing apparatus 5, processes, such as neutralization, are implemented. Further, the gas that has entered the pipe 76 from the cup portion 45 is sent to the exhaust treatment device 6 through the exhaust pipe 77B and processed. After the removal of the cleaning solution 92 with pure water has sufficiently progressed, the supply of pure water from the pure water production apparatus 3 is stopped, and the step (S14) ends.
　工程（Ｓ１４）が終了した後、半導体基板９１が乾燥される（Ｓ１５）。具体的には、工程（Ｓ１３）および（Ｓ１４）と同様に半導体基板９１が回転している状態で、不活性ガス保持部４から、たとえば窒素ガスが配管７３を介して第３ノズル６３へと輸送される。そして、第３ノズル６３から矢印γに沿って窒素ガスが吐出される。吐出された窒素ガスは、半導体基板９１の表面（主面）に吹きつけられる。これにより、半導体基板９１の表面に残存している水分の蒸発が進行し、半導体基板９１の表面が乾燥する。窒素ガスによる半導体基板９１の乾燥が十分に進行した後、不活性ガス保持部４からの窒素ガスの供給が停止され、工程（Ｓ１５）が終了する。工程（Ｓ１３）～（Ｓ１５）が実施される間、洗浄装置１の筐体１Ａ内のガスは、必要に応じて排気管７７Ｃおよび排気管７７Ｂを介して排気処理装置６に送られ、処理される。 After the step (S14) is completed, the semiconductor substrate 91 is dried (S15). Specifically, as in the steps (S13) and (S14), in a state where the semiconductor substrate 91 is rotating, for example, nitrogen gas is supplied from the inert gas holding unit 4 to the third nozzle 63 via the pipe 73. Transported. Then, nitrogen gas is discharged from the third nozzle 63 along the arrow γ. The discharged nitrogen gas is blown onto the surface (main surface) of the semiconductor substrate 91. Thereby, evaporation of moisture remaining on the surface of the semiconductor substrate 91 proceeds, and the surface of the semiconductor substrate 91 is dried. After the semiconductor substrate 91 is sufficiently dried by the nitrogen gas, the supply of the nitrogen gas from the inert gas holding unit 4 is stopped, and the step (S15) is completed. While the steps (S13) to (S15) are performed, the gas in the housing 1A of the cleaning device 1 is sent to the exhaust treatment device 6 through the exhaust pipe 77C and the exhaust pipe 77B and processed as necessary. The
　工程（Ｓ１５）が終了した後、被処理物である半導体基板９１が洗浄装置１から取り出される（Ｓ１６）。具体的には、図１を参照して、まず半導体基板９１の取り出しを容易にする目的で、昇降部４３を動作させてカップ部４５を降下させる。これにより、保持部４１がカップ部４５に取り囲まれる空間から離脱した状態となる。次に、半導体基板９１が保持部４１から取り外される。たとえば、保持部４１による真空吸着が解除された後、基板搬送アーム（図示しない）により半導体基板９１が洗浄装置１から取り出される。以上の手順により、洗浄装置１を用いた半導体基板９１の洗浄が完了する。 After the step (S15) is completed, the semiconductor substrate 91 as the object to be processed is taken out from the cleaning apparatus 1 (S16). Specifically, referring to FIG. 1, for the purpose of facilitating removal of the semiconductor substrate 91, the cup unit 45 is lowered by operating the elevating unit 43. As a result, the holding portion 41 is separated from the space surrounded by the cup portion 45. Next, the semiconductor substrate 91 is removed from the holding portion 41. For example, after the vacuum suction by the holding unit 41 is released, the semiconductor substrate 91 is taken out from the cleaning apparatus 1 by a substrate transfer arm (not shown). With the above procedure, the cleaning of the semiconductor substrate 91 using the cleaning apparatus 1 is completed.
　上記洗浄装置１による半導体基板９１の洗浄の開始前に、溶液槽１０内の洗浄溶液９２の濃度は適切に調整される。しかし、洗浄溶液９２の溶質および溶媒が気化すると、洗浄溶液９２の組成が変化し、所望の洗浄が実施できないおそれがある。本実施の形態においては、洗浄溶液９２がヒータ３１により加熱される。そのため、洗浄溶液９２の溶質および溶媒の気化が進行しやすい。特に、溶媒である水が気化することにより、溶質である硫酸の濃度が高くなりやすい。 The concentration of the cleaning solution 92 in the solution tank 10 is appropriately adjusted before the cleaning of the semiconductor substrate 91 by the cleaning apparatus 1 is started. However, if the solute and solvent of the cleaning solution 92 are vaporized, the composition of the cleaning solution 92 changes, and there is a possibility that desired cleaning cannot be performed. In the present embodiment, the cleaning solution 92 is heated by the heater 31. Therefore, vaporization of the solute and solvent of the cleaning solution 92 is likely to proceed. In particular, the concentration of sulfuric acid, which is a solute, tends to increase due to the evaporation of water, which is a solvent.
　しかし、本実施の形態の洗浄装置１は、液化部２０を備えている。そのため、気化することにより溶液槽１０から液化部２０に到達した洗浄溶液９２の溶質および溶媒が液化部２０において液化されて、溶液槽１０に流入する。液化部２０において液化した洗浄溶液９２の溶質や溶媒は、重力によって溶液槽１０に流入する。そのため、気化した洗浄溶液９２の溶媒や溶質が、排気管７７Ａから外部へと排出されることが抑制される。また、別途動力源を設けることなく、液化部２０内において液化した洗浄溶液９２が溶液槽１０へと導かれる。その結果、洗浄溶液９２の濃度の変化が抑制される。 However, the cleaning device 1 according to the present embodiment includes the liquefaction unit 20. Therefore, the solute and the solvent of the cleaning solution 92 that have reached the liquefying unit 20 from the solution tank 10 by being vaporized are liquefied in the liquefying unit 20 and flow into the solution tank 10. The solute or solvent of the cleaning solution 92 liquefied in the liquefying unit 20 flows into the solution tank 10 by gravity. For this reason, it is possible to suppress the exhausted solvent or solute of the cleaning solution 92 from the exhaust pipe 77A. Further, the cleaning solution 92 liquefied in the liquefying unit 20 is guided to the solution tank 10 without providing a separate power source. As a result, the change in the concentration of the cleaning solution 92 is suppressed.
　また、洗浄装置１は、冷却水流路３４を備えている。そのため、液化部２０内に進入した洗浄溶液９２の溶質および溶媒を効率よく液化させることができる。また、冷却水流路３４を流れる冷却水（純水）による冷却によって、温度上昇等に伴う溶液槽１０および液化部２０内の気体の圧力の上昇を抑制することができる。さらに、排気管７７Ａは、液化部２０に接続されている。そのため、気化した洗浄溶液９２の溶媒や溶質が排気管７７Ａに到達する前に液化部２０を通過し、効率よく液化される。また、排気管７７Ａは、液化部２０の、冷却水流路３４により冷却される領域から見て溶液槽１０に接続される側とは反対側に接続されている。そのため、気化した洗浄溶液９２の溶媒や溶質が排気管７７Ａに到達する前に、冷却水流路３４により冷却される領域を通過し、効率よく液化される。 Further, the cleaning device 1 includes a cooling water channel 34. Therefore, the solute and solvent of the cleaning solution 92 that has entered the liquefying unit 20 can be efficiently liquefied. Further, by the cooling with the cooling water (pure water) flowing through the cooling water flow path 34, it is possible to suppress an increase in the gas pressure in the solution tank 10 and the liquefying unit 20 due to a temperature rise or the like. Further, the exhaust pipe 77 </ b> A is connected to the liquefaction unit 20. Therefore, the solvent or solute of the vaporized cleaning solution 92 passes through the liquefying unit 20 before reaching the exhaust pipe 77A, and is efficiently liquefied. The exhaust pipe 77 </ b> A is connected to the side of the liquefying unit 20 opposite to the side connected to the solution tank 10 when viewed from the region cooled by the cooling water flow path 34. Therefore, before the evaporated solvent or solute of the cleaning solution 92 reaches the exhaust pipe 77A, it passes through the region cooled by the cooling water flow path 34 and is efficiently liquefied.
　また、溶液槽１０および液化部２０内の気体の圧力は、以下のように調整される。圧力計３２、バルブ３３およびバルブ３５は、リレー回路、ＰＬＣ（Ｐｒｏｇｒａｍｍａｂｌｅ　Ｌｏｇｉｃ　Ｃｏｎｔｒｏｌｌｅｒ）などの制御部９に接続される。制御部９は、圧力計３２から得られる圧力の情報に基づいてバルブ３３およびバルブ３５を制御して圧力を調整する。 Moreover, the pressure of the gas in the solution tank 10 and the liquefaction part 20 is adjusted as follows. The pressure gauge 32, the valve 33, and the valve 35 are connected to a control unit 9 such as a relay circuit or a PLC (Programmable Logic Controller). The control unit 9 controls the valve 33 and the valve 35 based on the pressure information obtained from the pressure gauge 32 to adjust the pressure.
　圧力計３２により測定される溶液槽１０および液化部２０内の気体の圧力と大気圧との差が、たとえば１ｋＰａ以下である場合、制御部９はバルブ３３およびバルブ３５を閉状態に維持する。圧力計３２により測定される溶液槽１０および液化部２０内の気体の圧力が、洗浄溶液９２の増加、溶液槽１０および液化部２０内の温度の上昇等に起因して、大気圧よりも１ｋＰａを超えて大きくなると、制御部９はバルブ３３を開状態とする。これにより、溶液槽１０および液化部２０内の気体が排気管７７Ａを介して外部へと排出される。そして、溶液槽１０および液化部２０内の気体の圧力と大気圧との差が、１ｋＰａ以下となると、制御部９はバルブ３３を閉状態とする。 When the difference between the pressure of the gas in the solution tank 10 and the liquefaction unit 20 measured by the pressure gauge 32 and the atmospheric pressure is, for example, 1 kPa or less, the control unit 9 maintains the valve 33 and the valve 35 in the closed state. The pressure of the gas in the solution tank 10 and the liquefaction unit 20 measured by the pressure gauge 32 is 1 kPa above atmospheric pressure due to an increase in the cleaning solution 92, an increase in temperature in the solution tank 10 and the liquefaction unit 20, and the like. When it becomes larger than this, the control unit 9 opens the valve 33. Thereby, the gas in the solution tank 10 and the liquefaction part 20 is discharged | emitted outside via the exhaust pipe 77A. Then, when the difference between the gas pressure in the solution tank 10 and the liquefaction unit 20 and the atmospheric pressure becomes 1 kPa or less, the control unit 9 closes the valve 33.
　一方、圧力計３２により測定される溶液槽１０および液化部２０内の気体の圧力が、洗浄溶液９２の減少等に起因して、大気圧よりも１ｋＰａを超えて小さくなると、制御部９はバルブ３５を開状態とする。これにより、不活性ガス保持部４内に保持される窒素ガスが給気管７８を介して溶液槽１０内に流入する。そして、溶液槽１０および液化部２０内の気体の圧力と大気圧との差が、１ｋＰａ以下となると、制御部９はバルブ３５を閉状態とする。 On the other hand, when the pressure of the gas in the solution tank 10 and the liquefying unit 20 measured by the pressure gauge 32 becomes smaller than the atmospheric pressure by exceeding 1 kPa due to a decrease in the cleaning solution 92 or the like, the control unit 9 35 is opened. As a result, the nitrogen gas held in the inert gas holding unit 4 flows into the solution tank 10 through the air supply pipe 78. Then, when the difference between the gas pressure in the solution tank 10 and the liquefying unit 20 and the atmospheric pressure becomes 1 kPa or less, the control unit 9 closes the valve 35.
　このように、必要な場合にのみ溶液槽１０および液化部２０内の気体を、排気管７７Ａを介して外部へと排出するとともに、溶液槽１０および液化部２０内の圧力を大気圧に近い状態に維持する。これにより、気化した洗浄溶液９２の溶媒や溶質が排気管７７Ａから外部に排出されることを抑制しつつ、溶液槽１０および液化部２０内が負圧になることによる外部からのガスの侵入を抑制することができる。 Thus, only when necessary, the gas in the solution tank 10 and the liquefying unit 20 is discharged to the outside through the exhaust pipe 77A, and the pressure in the solution tank 10 and the liquefying unit 20 is close to atmospheric pressure. To maintain. Thereby, invasion of gas from the outside due to the negative pressure in the solution tank 10 and the liquefying section 20 while suppressing the exhausted solvent and solute of the cleaning solution 92 from the exhaust pipe 77A to the outside. Can be suppressed.
　なお、本実施の形態においては、溶液槽１０内に保持される洗浄溶液９２が第１ノズル６１から吐出される場合について説明したが、半導体基板９１が溶液槽１０内に浸漬されることにより洗浄される構成が採用されてもよい。また、本実施の形態においては、溶液槽１０および液化部２０内の気体の圧力を管理し、必要な場合にのみ不活性ガス（窒素ガス）を溶液槽１０および液化部２０内に流入させる構成について説明したが、溶液槽１０および液化部２０内に常時不活性ガスを流入させ、排気管７７Ａから排出する構造が採用されてもよい。このとき、排気管７７Ａにおける不活性ガスの流速は、５ｃｍ／ｓｅｃ以上とすることが好ましい。これにより、排気管７７Ａから金属等の不純物を含むガス（汚染ガス）が溶液槽１０および液化部２０へと逆流（逆拡散）し、洗浄溶液９２を汚染することを抑制することができる。 In the present embodiment, the case where the cleaning solution 92 held in the solution tank 10 is discharged from the first nozzle 61 has been described, but cleaning is performed by immersing the semiconductor substrate 91 in the solution tank 10. The structure which is made may be adopted. In the present embodiment, the gas pressure in the solution tank 10 and the liquefaction unit 20 is managed, and an inert gas (nitrogen gas) is allowed to flow into the solution tank 10 and the liquefaction unit 20 only when necessary. However, a structure in which an inert gas is always allowed to flow into the solution tank 10 and the liquefying unit 20 and is discharged from the exhaust pipe 77A may be employed. At this time, the flow rate of the inert gas in the exhaust pipe 77A is preferably 5 cm / sec or more. Accordingly, it is possible to suppress the gas (contamination gas) containing impurities such as metals from the exhaust pipe 77 </ b> A from flowing back (back diffusion) into the solution tank 10 and the liquefaction unit 20 and contaminating the cleaning solution 92.
　上記実施の形態において説明した洗浄装置１において、制御部９、圧力計３２、バルブ３３、冷却水流路３４および冷却水配管７９を省略したものを作製し、洗浄溶液９２の濃度の安定性を確認する実験を行った。実験の具体的な方法は以下の通りである。 In the cleaning apparatus 1 described in the above embodiment, the controller 9, the pressure gauge 32, the valve 33, the cooling water passage 34 and the cooling water pipe 79 are omitted, and the stability of the concentration of the cleaning solution 92 is confirmed. An experiment was conducted. The specific method of the experiment is as follows.
　硫酸と水とを混合することで硫酸濃度１．００ｖｏｌ％に調整された洗浄溶液９２を溶液槽１０内に保持し、洗浄溶液９２の温度を８９．５℃以上９０．５℃以下の範囲に維持した。このとき、排気管７７Ａにおける不活性ガス（窒素ガス）の流速が５．２５ｃｍ／ｓｅｃとなるように、不活性ガス保持部４から給気管７８を介して溶液槽１０に不活性ガスを供給した。液化部２０周辺の温度は２６℃に維持した。１日経過ごとに洗浄溶液９２の液面の高さから洗浄溶液９２の減少量を測定した。硫酸濃度１．００ｖｏｌ％程度の溶液の９０℃付近における硫酸の蒸気圧はほぼ０であることから、洗浄溶液９２の減少量は水の蒸発量であるとして、洗浄溶液９２の蒸発率および濃度を算出した。洗浄溶液９２の蒸発率は、当初の洗浄溶液９２の量に対する洗浄溶液９２の減少量の割合を意味する。なお、実験に用いた洗浄装置１において、液化部２０の内壁の面積は、溶液槽１０内にて気体に接触する洗浄溶液９２の表面積（溶液槽１０内における洗浄溶液９２の液面の面積）に等しくなるように設定されている。実験結果を図３に示す。 The cleaning solution 92 adjusted to a sulfuric acid concentration of 1.00 vol% by mixing sulfuric acid and water is held in the solution tank 10, and the temperature of the cleaning solution 92 is in the range of 89.5 ° C. or higher and 90.5 ° C. or lower. Maintained. At this time, the inert gas was supplied from the inert gas holding unit 4 to the solution tank 10 through the air supply pipe 78 so that the flow rate of the inert gas (nitrogen gas) in the exhaust pipe 77A was 5.25 cm / sec. . The temperature around the liquefaction unit 20 was maintained at 26 ° C. The decrease amount of the cleaning solution 92 was measured from the height of the cleaning solution 92 every day. Since the vapor pressure of sulfuric acid in the vicinity of 90 ° C. of a solution having a sulfuric acid concentration of about 1.00 vol% is almost 0, the decrease amount of the cleaning solution 92 is assumed to be the evaporation amount of water, and the evaporation rate and concentration of the cleaning solution 92 are Calculated. The evaporation rate of the cleaning solution 92 means a ratio of a decrease amount of the cleaning solution 92 to the initial amount of the cleaning solution 92. In the cleaning apparatus 1 used in the experiment, the area of the inner wall of the liquefying unit 20 is the surface area of the cleaning solution 92 that contacts the gas in the solution tank 10 (the area of the liquid surface of the cleaning solution 92 in the solution tank 10). Is set to be equal to. The experimental results are shown in FIG.
　図３において、横軸は経過日数を示す。左側の縦軸は洗浄溶液９２の濃度、右側の縦軸は洗浄溶液９２の蒸発率を示す。菱形のデータ点は洗浄溶液９２の濃度、正方形のデータ点は洗浄溶液９２の蒸発率に対応する。図３を参照して、１１日経過時点における洗浄溶液９２の蒸発率は３．５８ｖｏｌ％であり、洗浄溶液９２の濃度は１．０４ｖｏｌ％である。つまり、洗浄溶液９２の濃度の変化量は、０．０４ｖｏｌ％に抑えられている。洗浄溶液９２は、作成後、１日以内に廃棄されるのが一般的であることを考慮すると、洗浄溶液９２の濃度はほとんど変化していないといえる。これは、溶液槽１０内から蒸発した洗浄溶液９２のほとんどが液化部２０において液化し、溶液槽１０に戻るためであると考えられる。 In Fig. 3, the horizontal axis indicates the number of days elapsed. The left vertical axis indicates the concentration of the cleaning solution 92, and the right vertical axis indicates the evaporation rate of the cleaning solution 92. The diamond data points correspond to the concentration of the cleaning solution 92, and the square data points correspond to the evaporation rate of the cleaning solution 92. Referring to FIG. 3, the evaporation rate of cleaning solution 92 at the elapse of 11 days is 3.58 vol%, and the concentration of cleaning solution 92 is 1.04 vol%. That is, the amount of change in the concentration of the cleaning solution 92 is suppressed to 0.04 vol%. Considering that the cleaning solution 92 is generally discarded within one day after preparation, it can be said that the concentration of the cleaning solution 92 has hardly changed. This is probably because most of the cleaning solution 92 evaporated from the solution tank 10 is liquefied in the liquefaction unit 20 and returned to the solution tank 10.
　以上の実験結果より、本願の洗浄装置によれば、洗浄溶液の濃度の変化を抑制できることが確認される。なお、図３に示すように、洗浄溶液９２の蒸発率および濃度は、わずかながら時間の経過とともに上昇している。これは、溶液槽１０内から蒸発した洗浄溶液９２の一部が、排気管７７Ａを介して排出されているためであると考えられる。このような洗浄溶液９２の排出を抑制し、洗浄溶液９２の濃度の変化を一層抑制する観点から、液化部２０の内壁の面積は、溶液槽１０内にて気体に接触する洗浄溶液９２の表面積（溶液槽１０内における洗浄溶液９２の液面の面積）以上となるように設定されることが好ましい。また、同様の観点から、液化部２０内の空間を冷却する冷却部（冷却水流路３４）、冷却水配管７９、排気管７７Ａに設置されるバルブ３３、圧力計３２、制御部９などを追加し、液化部２０の冷却や液化部２０の密閉が可能な構造を採用することが好ましい。 From the above experimental results, it is confirmed that the change in the concentration of the cleaning solution can be suppressed according to the cleaning device of the present application. As shown in FIG. 3, the evaporation rate and concentration of the cleaning solution 92 slightly increase with the passage of time. This is considered to be because a part of the cleaning solution 92 evaporated from the solution tank 10 is discharged through the exhaust pipe 77A. From the viewpoint of suppressing the discharge of the cleaning solution 92 and further suppressing the change in the concentration of the cleaning solution 92, the area of the inner wall of the liquefying unit 20 is the surface area of the cleaning solution 92 that contacts the gas in the solution tank 10. It is preferably set to be equal to or greater than (the area of the liquid surface of the cleaning solution 92 in the solution tank 10). From the same point of view, a cooling unit (cooling water flow path 34) for cooling the space in the liquefaction unit 20, a cooling water pipe 79, a valve 33 installed in the exhaust pipe 77A, a pressure gauge 32, a control unit 9 and the like are added. However, it is preferable to employ a structure that can cool the liquefying unit 20 and seal the liquefying unit 20.
　今回開示された実施の形態および実施例はすべての点で例示であって、どのような面からも制限的なものではないと理解されるべきである。本発明の範囲は上記した説明ではなく、請求の範囲によって規定され、請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。 It should be understood that the embodiments and examples disclosed this time are examples in all respects and are not restrictive in any aspect. The scope of the present invention is defined by the scope of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the scope of the claims.
　１　洗浄装置、１Ａ　筐体、２　溶質保持部、３　純水製造装置、４　不活性ガス保持部、５　廃液処理装置、６　排気処理装置、９　制御部、１０　溶液槽、１０Ａ　上壁、１０Ｂ　底壁、１１　開口部、２０　液化部、２１　本体部、２１Ａ　上壁、２２　集液部、３１　ヒータ、３２　圧力計、３３　バルブ、３４　冷却水流路、３５　バルブ、４１　保持部、４２　軸部、４３　昇降部、４４　回転駆動部、４５　カップ部、５１　接続管、６１　第１ノズル、６２　第２ノズル、６３　第３ノズル、７１～７６　配管、７７Ａ，７７Ｂ，７７Ｃ　排気管、７８　給気管、７９　冷却水配管、９１　半導体基板、９２　洗浄溶液。 1 cleaning device, 1A housing, 2 solute holding unit, 3 pure water production device, 4 inert gas holding unit, 5 waste liquid processing device, 6 exhaust processing device, 9 control unit, 10 solution tank, 10A top wall, 10B bottom Wall, 11 opening, 20 liquefaction part, 21 body part, 21A upper wall, 22 liquid collection part, 31 heater, 32 pressure gauge, 33 valve, 34 cooling water flow path, 35 valve, 41 holding part, 42 shaft part, 43 Lifting / lowering part, 44 rotary drive part, 45 cup part, 51 connecting pipe, 61 first nozzle, 62 second nozzle, 63 third nozzle, 71-76 pipe, 77A, 77B, 77C exhaust pipe, 78 air supply pipe, 79 cooling Water piping, 91 semiconductor substrate, 92 cleaning solution.

Claims (7)

  1. 　洗浄溶液により半導体を洗浄するための洗浄装置であって、
    　前記洗浄溶液を保持する洗浄溶液保持部と、
    　前記洗浄溶液保持部に接続される液化部と、を備え、
    　気化することにより前記洗浄溶液保持部から前記液化部に到達した前記洗浄溶液が前記液化部において液化されて前記洗浄溶液保持部に流入するように前記液化部が設置される、洗浄装置。     A cleaning device for cleaning a semiconductor with a cleaning solution,
    A cleaning solution holding unit for holding the cleaning solution;
    A liquefying unit connected to the cleaning solution holding unit,
    A cleaning apparatus in which the liquefaction unit is installed so that the cleaning solution that has reached the liquefaction unit from the cleaning solution holding unit by vaporization is liquefied in the liquefaction unit and flows into the cleaning solution holding unit.
  2. 　前記液化部は、前記液化部内において液化した前記洗浄溶液が重力によって前記洗浄溶液保持部内に流入可能なように設置される、請求項１に記載の洗浄装置。 The cleaning device according to claim 1, wherein the liquefying unit is installed so that the cleaning solution liquefied in the liquefying unit can flow into the cleaning solution holding unit by gravity.
  3. 　前記洗浄溶液保持部内に保持される前記洗浄溶液を加熱する加熱部をさらに備える、請求項１または２に記載の洗浄装置。 The cleaning apparatus according to claim 1 or 2, further comprising a heating unit that heats the cleaning solution held in the cleaning solution holding unit.
  4. 　前記液化部内の空間を冷却する冷却部をさらに備える、請求項１～３のいずれか１項に記載の洗浄装置。 The cleaning apparatus according to any one of claims 1 to 3, further comprising a cooling unit that cools a space in the liquefying unit.
  5. 　前記液化部および前記洗浄溶液保持部の少なくともいずれか一方に接続される給気管をさらに備える、請求項１～４のいずれか１項に記載の洗浄装置。 The cleaning apparatus according to any one of claims 1 to 4, further comprising an air supply pipe connected to at least one of the liquefying unit and the cleaning solution holding unit.
  6. 　前記液化部または前記洗浄溶液保持部に接続される排気管と、
    　前記排気管に設置されるバルブと、をさらに備える、請求項１～５のいずれか１項に記載の洗浄装置。     An exhaust pipe connected to the liquefying unit or the cleaning solution holding unit;
    The cleaning apparatus according to any one of claims 1 to 5, further comprising a valve installed in the exhaust pipe.
  7. 　前記液化部および前記洗浄溶液保持部の少なくともいずれか一方に接続される圧力測定部をさらに備える、請求項１～６のいずれか１項に記載の洗浄装置。 The cleaning apparatus according to any one of claims 1 to 6, further comprising a pressure measurement unit connected to at least one of the liquefaction unit and the cleaning solution holding unit.
PCT/JP2016/064812 2015-05-22 2016-05-19 Cleaning device WO2016190203A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284456A (en) * 1997-04-10 1998-10-23 Matsushita Electric Ind Co Ltd Semiconductor substrate cleaner
JPH10284458A (en) * 1997-04-04 1998-10-23 Nec Corp Semiconductor manufacturing device
JPH11274133A (en) * 1998-03-23 1999-10-08 Nec Corp Chemical liquid treatment apparatus
JP2004128102A (en) * 2002-10-01 2004-04-22 Tokyo Electron Ltd Vapor-liquid separation/recovery apparatus of liquid processing apparatus
JP2012204417A (en) * 2011-03-24 2012-10-22 Dainippon Screen Mfg Co Ltd Substrate processing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284458A (en) * 1997-04-04 1998-10-23 Nec Corp Semiconductor manufacturing device
JPH10284456A (en) * 1997-04-10 1998-10-23 Matsushita Electric Ind Co Ltd Semiconductor substrate cleaner
JPH11274133A (en) * 1998-03-23 1999-10-08 Nec Corp Chemical liquid treatment apparatus
JP2004128102A (en) * 2002-10-01 2004-04-22 Tokyo Electron Ltd Vapor-liquid separation/recovery apparatus of liquid processing apparatus
JP2012204417A (en) * 2011-03-24 2012-10-22 Dainippon Screen Mfg Co Ltd Substrate processing method

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