WO2016184840A3 - Solar cell and a method for producing a solar cell with oxidised intermediate regions between polysilicon contacts - Google Patents

Solar cell and a method for producing a solar cell with oxidised intermediate regions between polysilicon contacts Download PDF

Info

Publication number
WO2016184840A3
WO2016184840A3 PCT/EP2016/060989 EP2016060989W WO2016184840A3 WO 2016184840 A3 WO2016184840 A3 WO 2016184840A3 EP 2016060989 W EP2016060989 W EP 2016060989W WO 2016184840 A3 WO2016184840 A3 WO 2016184840A3
Authority
WO
WIPO (PCT)
Prior art keywords
type doped
doped regions
solar cell
producing
silicon layer
Prior art date
Application number
PCT/EP2016/060989
Other languages
German (de)
French (fr)
Other versions
WO2016184840A2 (en
Inventor
Robby Peibst
Udo Römer
Original Assignee
Institut Für Solarenergieforschung Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut Für Solarenergieforschung Gmbh filed Critical Institut Für Solarenergieforschung Gmbh
Publication of WO2016184840A2 publication Critical patent/WO2016184840A2/en
Publication of WO2016184840A3 publication Critical patent/WO2016184840A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to a method for producing a solar cell (1), comprising the steps of: (a) providing a silicon substrate (3); (b) producing a boundary surface dielectric layer (5) on a surface of the silicon substrate (3); (c) depositing a silicon layer (7) consisting of amorphous or polycrystalline silicon onto said boundary surface dielectric layer (5), wherein the silicon layer (7) comprises laterally adjoining p-type doped regions (9) and n-type doped regions (11); (d) oxidising the silicon layer (7) in a locally delimited manner in intermediate regions (19) between adjoining p-type doped regions (9) and n-type doped regions (11); and (e) producing p-contacts (31) in contact with the p-type doped regions (9) of the silicon layer (7), and n-contacts (33) in contact with the n-type doped regions (11) of the silicon layer (7). Said locally-delimited oxidation allows the adjoining p-type doped regions (9) and n-type doped regions (11) to be electrically separated from one another, while simultaneously obtaining a good degree of passivation.
PCT/EP2016/060989 2015-05-19 2016-05-17 Solar cell and a method for producing a solar cell with oxidised intermediate regions between polysilicon contacts WO2016184840A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015107842.2A DE102015107842B3 (en) 2015-05-19 2015-05-19 Method for producing a solar cell with oxidized intermediate regions between poly-silicon contacts
DE102015107842.2 2015-05-19

Publications (2)

Publication Number Publication Date
WO2016184840A2 WO2016184840A2 (en) 2016-11-24
WO2016184840A3 true WO2016184840A3 (en) 2017-02-02

Family

ID=55971020

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/060989 WO2016184840A2 (en) 2015-05-19 2016-05-17 Solar cell and a method for producing a solar cell with oxidised intermediate regions between polysilicon contacts

Country Status (2)

Country Link
DE (1) DE102015107842B3 (en)
WO (1) WO2016184840A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020170830A (en) * 2019-04-05 2020-10-15 株式会社アルバック Method for manufacturing crystal based solar battery of topcon-bc structure, and crystal based solar battery of topcon-bc structure
EP3982421A1 (en) 2020-10-09 2022-04-13 International Solar Energy Research Center Konstanz E.V. Method for local modification of etching resistance in a silicon layer, use of this method in the production of passivating contact solar cells and thus-created solar cell

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61134065A (en) * 1984-12-04 1986-06-21 Fuji Electric Co Ltd Manufacture of thyristor
DE102010004497A1 (en) * 2010-01-12 2011-07-14 centrotherm photovoltaics AG, 89143 Method for increasing sheet resistance in partial area of doped semiconductor region e.g. emitter region, of solar cell e.g. silicon solar cell, involves carrying out oxidation of partial area in water-vapor containing environment
US20110318874A1 (en) * 2009-03-27 2011-12-29 Tsutomu Yamazaki Method for manufacturing photoelectric conversion element and photoelectric conversion element
KR101186529B1 (en) * 2011-10-26 2012-10-08 엘지전자 주식회사 Solar cell
EP2797124A1 (en) * 2013-04-23 2014-10-29 LG Electronics, Inc. Solar cell and method for manufacturing the same
EP2879189A2 (en) * 2013-11-28 2015-06-03 LG Electronics Inc. Solar cell and method of manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US8658458B2 (en) 2011-06-15 2014-02-25 Varian Semiconductor Equipment Associates, Inc. Patterned doping for polysilicon emitter solar cells
US10014425B2 (en) 2012-09-28 2018-07-03 Sunpower Corporation Spacer formation in a solar cell using oxygen ion implantation

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61134065A (en) * 1984-12-04 1986-06-21 Fuji Electric Co Ltd Manufacture of thyristor
US20110318874A1 (en) * 2009-03-27 2011-12-29 Tsutomu Yamazaki Method for manufacturing photoelectric conversion element and photoelectric conversion element
DE102010004497A1 (en) * 2010-01-12 2011-07-14 centrotherm photovoltaics AG, 89143 Method for increasing sheet resistance in partial area of doped semiconductor region e.g. emitter region, of solar cell e.g. silicon solar cell, involves carrying out oxidation of partial area in water-vapor containing environment
KR101186529B1 (en) * 2011-10-26 2012-10-08 엘지전자 주식회사 Solar cell
EP2797124A1 (en) * 2013-04-23 2014-10-29 LG Electronics, Inc. Solar cell and method for manufacturing the same
EP2879189A2 (en) * 2013-11-28 2015-06-03 LG Electronics Inc. Solar cell and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GOETZLICH ET AL: "Dopant dependence of the oxidation rate of ion implanted silicon", RADIATION EFFECTS, GORDON AND BREACH SCIENCE PUBLISHERS, NEW YORK, NY, US, vol. 47, no. 1-4, 1 January 1980 (1980-01-01), pages 203 - 209, XP009159026, ISSN: 0033-7579, DOI: 10.1080/00337578008209211 *

Also Published As

Publication number Publication date
WO2016184840A2 (en) 2016-11-24
DE102015107842B3 (en) 2016-10-27

Similar Documents

Publication Publication Date Title
WO2010055346A3 (en) Deep grooved rear contact photovoltaic solar cells
HRP20240417T1 (en) Method for producing a photovoltaic solar cell with at least one heterojunction
WO2010056800A3 (en) A method of forming front contacts to a silicon solar cell without patterning
WO2008039078A3 (en) Back contacted solar cell
WO2010071341A3 (en) Solar cell and method of manufacturing the same
JP2011523231A5 (en)
WO2010093177A3 (en) Solar cell and method for manufacturing the same
EP2395554A3 (en) Fabrication method for interdigitated back contact photovoltaic cells
SG10201805060XA (en) Semiconductor device and method of manufacturing the same
WO2007130188A3 (en) Solar cell having doped semiconductor heterojunction contacts
WO2011091959A3 (en) Method for local high-doping and contacting of a semiconductor structure which comprises a solar cell or a precursor of a solar cell
WO2008156516A3 (en) Methods of fabricating silicon carbide power devices by at least partially removing an n-type silicon carbide substrate, and silicon carbide power devices so fabricated
MY162679A (en) Thin silicon solar cell and method of manufacture
EP2879189A3 (en) Solar cell and method of manufacturing the same
TW200638555A (en) Solar cell and semiconductor device, and manufacturing method thereof
MY187141A (en) Trench process and structure for backside contact solar cells with polysilicon doped regions
WO2009037955A1 (en) Method for manufacturing solar cell
WO2011020124A3 (en) Backside only contact thin-film solar cells and devices, systems and methods of fabricating same, and products produced by processes thereof
PH12016502437A1 (en) Solar cell and method for producing solar cell
WO2010039520A3 (en) Methods for simultaneously forming n-type and p-type doped regions using non-contact printing processes
WO2010013956A3 (en) Solar cell, method of manufacturing the same, and solar cell module
WO2008154526A3 (en) Method to make low resistance contact
WO2013105031A3 (en) Method for manufacturing a photovoltaic module with two etching steps p2 and p3 and corresponding photovoltaic module
EP2595194A3 (en) Solar cell and method for manufacturing the same
EP2626914A3 (en) Solar Cell and Method of Manufacturing the Same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16722907

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16722907

Country of ref document: EP

Kind code of ref document: A2