WO2016157317A1

WO2016157317A1 - Substrate processing device, semiconductor device production method, and recording medium

Info

Publication number: WO2016157317A1
Application number: PCT/JP2015/059708
Authority: WO
Inventors: 野内　英博
Original assignee: 株式会社日立国際電気
Priority date: 2015-03-27
Filing date: 2015-03-27
Publication date: 2016-10-06

Abstract

Problem: To improve the quality of a substrate being processed in a process wherein an etching gas is used to etch a silicon layer on the substrate. Solution: Provided is a configuration comprising: a processing chamber for housing a substrate having a silicon layer on the surface thereof; and a gas introducing part for introducing, into the processing chamber, the etching gas for etching the silicon layer. The gas introducing part comprises: a dispersion plate configured in such a manner that the etching gas, which has been supplied from an etching gas supply tube to the gas introducing part, passes therethrough; and a shower plate configured in such a manner that the etching gas, which has passed through the dispersion plate, passes therethrough and enters the processing chamber. The dispersion plate is configured in such a manner that the ratio of the pressure in the space between the supply tube and the dispersion plate, over the pressure in the space between the dispersion plate and the shower plate, is 1.07 or less.

Description

Substrate processing apparatus, semiconductor device manufacturing method, and recording medium

The present disclosure relates to a substrate processing apparatus, a semiconductor device manufacturing method, and a recording medium.

As one of the processes for forming a circuit pattern of a semiconductor device, a gas having a characteristic of etching a silicon layer (for example, when performing a process of removing (etching) a silicon (Si) layer formed on a substrate) (for example, The substrate is treated with iodine heptafluoride (IF ₇ ) gas.

An object of the present disclosure is to provide a substrate processing technique suitable for performing a silicon layer removal process using a gas having a characteristic of etching a silicon layer.

According to one aspect of the present invention, a processing chamber in which a substrate having a silicon layer on the surface is accommodated, a gas supply system that supplies an etching gas for etching the silicon layer, and the etching that is supplied from the gas supply system A dispersion plate configured to pass the etching gas supplied from the supply pipe of the gas supply system to the gas introduction unit. And a shower plate configured to allow the etching gas that has passed through the dispersion plate to pass through and be introduced into the processing chamber, and the supply pipe with respect to the pressure in the space between the dispersion plate and the shower plate There is provided a substrate processing apparatus in which the dispersion plate is configured such that the ratio of the pressure in the space between the dispersion plate and the dispersion plate is 1.07 or less.

According to the above substrate processing technology, it is possible to improve the quality of the substrate to be processed in the process of etching the silicon layer on the substrate using the etching gas.

It is sectional drawing for demonstrating the structure of the substrate processing apparatus which concerns on an Example. It is sectional drawing for demonstrating the structure of the substrate processing apparatus which concerns on an Example. It is sectional drawing for demonstrating the structure of the gas introduction part of the substrate processing apparatus which concerns on an Example. It is sectional drawing for demonstrating the structure of the susceptor of the substrate processing apparatus which concerns on an Example. FIG. 5 is a cross-sectional view taken along line AA in FIG. FIG. 5 is a sectional view taken along line BB in FIG. It is an upper surface sectional view for explaining the composition of the conveyance system of the substrate processing apparatus concerning an example. It is a block diagram for demonstrating the structure of the controller of the substrate processing apparatus which concerns on an Example. It is a flowchart for demonstrating the substrate processing process which concerns on an Example. It is sectional drawing for demonstrating the gas introduction part of the substrate processing apparatus which concerns on a comparative example. It is a figure for demonstrating the generation | occurrence | production condition of a pressure ratio and a point-like singularity. It is a figure which shows the calculation result of the gas temperature change by the adiabatic expansion effect in a pressure ratio. It is a figure for demonstrating the generation | occurrence | production mechanism of a point-like singularity. It is a figure for demonstrating the generation | occurrence | production mechanism of a point-like singularity. It is sectional drawing for demonstrating the gas introduction part of the substrate processing apparatus which concerns on embodiment. The partial pressure of the IF ₇ gas is a diagram showing an evaluation result of the etching rate and uniformity in 80 Pa. The partial pressure of the IF ₇ gas is a diagram showing an evaluation result of the etching rate and uniformity in 300 Pa. Is a diagram showing the correlation between the partial pressure and the etching rate of the IF ₇ gas.

Hereinafter, embodiments and examples will be described with reference to the drawings. However, in the following description, the same components may be denoted by the same reference numerals and repeated description may be omitted. In order to clarify the description, the drawings may be schematically represented with respect to the width, thickness, shape, etc. of each part as compared to the actual embodiment, but are merely examples, and the interpretation of the present invention is not limited to them. It is not limited.

<Comparative example>
First, a gas introduction part according to a technique (hereinafter referred to as a comparative example) studied by the inventor prior to the present application will be described with reference to FIG.

The substrate processing apparatus 10R is a substrate processing apparatus that performs an etching process on a silicon layer on a substrate using a processing gas including an etching gas. The substrate processing apparatus 10R includes a main body container 31 and a gas introduction unit 5R. The main body container 31 includes a susceptor 2 on which a substrate is placed. The gas introduction unit 5R is configured such that the processing gas supplied to the gas introduction port 516 passes through the dispersion plate 512R and the processing gas that passes through the dispersion plate 512R passes through and is introduced into the processing chamber 50R. A shower plate 511R. The dispersion plate 512R and the shower plate 511R are provided so as to be parallel to each other, and each of the dispersion plate 512R and the shower plate 511R includes a plurality of holes through which the processing gas passes.

When the pressure in the processing chamber 50R is Pc, the pressure in the space 513 above the shower plate 511R is Ps, and the pressure in the space 515 above the dispersion plate 512R is Pu, in the substrate processing apparatus 10R according to the comparative example, Pu >> Ps A pressure condition of ≈Pc is realized. The difference between Pu and Ps is increased, and the gas introduced from the gas inlet 516 is diffused in the radial and circumferential directions on the dispersion plate 512R. In the shower plate 511R, the rectifying effect is assumed to be the main, so that pressure loss with the processing chamber 50R is not applied, Ps≈Pc is set, and the flow velocity from the shower plate 511R is suppressed to reduce the influence of the hole. The distance (Hs) between the shower plate 511R and the susceptor 2 is 5 to 10 mm. However, as a result of using IF ₇ gas as an etching gas under such conditions, it was confirmed that a spot-like singular point (Spot) was generated immediately below the hole of the dispersion plate 512R. That is, etching progresses only at a specific portion on the substrate, and the etching process is uneven. This may be caused by the fact that the etching gas IF ₇ gas is not stably supplied into the wafer surface.

The inventors inferred the cause of the occurrence of point-like singularities as follows. FIG. 10 is a diagram showing the pressure ratio of Pu and Ps (Pu / Ps) and the state of occurrence of point-like singularities. FIG. 11 is a diagram showing the calculation result of the gas temperature change due to the adiabatic expansion effect with respect to Pu / Ps. FIG. 12A and FIG. 12B are diagrams showing the generation mechanism of point-like singularities.

As shown in FIG. 10, as an index of pressure loss in the dispersion plate 512R, when the presence / absence of a point-like singular point is verified for four patterns having different Pu / Ps, a condition (Pu) with a small Pu / Ps is obtained. /Ps≦1.07), point-like singularities are not generated, whereas point-like singularities are generated under conditions where Pu / Ps is large. Further, when the hole arrangement was compared with the apparatus shape, it was found that the generation position of the point-like singular point coincided with the hole position of the dispersion plate 512R.

From these facts, it is considered that the temperature decrease of the IF ₇ gas due to adiabatic expansion is one factor in the generation of point singularities. That is, the larger the Pu / Ps, the larger the volume change before and after the dispersion plate 512R, and the greater the degree of temperature decrease. It is presumed that the IF ₇ gas whose temperature has decreased is discharged from the holes of the dispersion plate 512R, passes through the shower plate 511R without obtaining sufficient diffusion, and proceeds to adsorption and desorption on the wafer.

FIG. 11 shows an example of diatomic molecule A and monoatomic molecule B assuming that the supplied IF ₇ gas exists as IF ₇ and decomposition is proceeding. In the region SOA of the pressure ratio (Pu / Ps> 1.07) where the point singularities are generated, the temperature instantaneously drops below the boiling point of IF ₇ (about 5 ° C.), and a part of IF ₇ Or the whole may be liquefied. Also, as shown in FIG. 12A, when the IF ₇ gas at normal temperature passes through the holes of the dispersion plate 512R, the temperature decreases due to adiabatic expansion and becomes low temperature IF ₇ gas. Thereafter, as shown in FIG. 12B, the low-temperature IF ₇ gas repeatedly collides with the surrounding normal-temperature gas and the wall surface, and the temperature rise gradually proceeds (temperature recovery). However, when the wafer processing temperature is, for example, about 20 to 60 ° C. and the chamber temperature of the processing chamber 50R is also a low temperature such as room temperature (about 25 ° C.), the low temperature IF ₇ gas arrives at the wafer 200 without recovering the temperature. The possibility of low temperature adsorption is high. In addition, since the generation of point singularities is concentrated and directly below the holes of the dispersion plate 512R, sufficient heat exchange is performed by colliding with the shower plate 511R between the dispersion plate 512R and the shower plate 511R. it IF ₇ that cold IF ₇ and gas and liquefaction could not be assumed that form a point-like singularities at the core on the wafer 200.

<Embodiment>
Next, a substrate processing apparatus and a gas introduction unit according to an embodiment of the present application will be described with reference to FIG. FIG. 13 is a sectional view schematically showing the substrate processing apparatus according to the embodiment.
(Gas introduction part)
The substrate processing apparatus 10 is a substrate processing apparatus that performs an etching process on a silicon layer formed on a substrate using a processing gas containing an etching gas. The substrate processing apparatus 10 includes a main body container 31 and a gas introduction unit 5. The main body container 31 includes a susceptor 2 on which a substrate is placed. The gas introduction unit 5 is configured such that the processing gas supplied from the gas introduction port 516 passes therethrough, and the processing gas that passes through the dispersion plate 512 passes through and is introduced into the processing chamber 50. A shower plate 511. The dispersion plate 512 and the shower plate 511 are provided so as to be parallel to each other, and each of the dispersion plate 512 and the shower plate 511 includes a plurality of holes through which the processing gas passes. When the pressure in the processing chamber 50 is Pc, the pressure in the space 513 above the shower plate 511 is Ps, and the pressure in the space 515 above the dispersion plate 512 is Pu, a pressure condition of Pu / Ps ≦ 1.07 is realized. The dispersion plate 512 is configured as described above. Pu is larger than Ps, and the difference (pressure loss) between Pu and Ps is set to 7% or less.
Before and after such a pressure satisfying the distribution plate 512, because the rapid temperature drop or liquefaction of etching gas, such as in the comparative example due to adiabatic expansion (mist) is not generated, when using the IF ₇ as an etching gas Even so, the occurrence of point-like singularities in etching can be suppressed.

General etching gases (Cl ₂ (boiling point −34 ° C.), HBr (boiling point −66 ° C.), CF ₄ (boiling point −127 ° C.), SF ₆ (boiling point −63 ° C.), etc.) are compared to IF ₇ gas. Because of its low boiling point, liquefaction due to adiabatic expansion hardly occurs. In general, in order to uniformly disperse the gas, it is desirable to increase the pressure difference before and after the dispersion plate to some extent. Therefore, normally, there is no necessity to adopt the structure of the dispersion plate as in this embodiment in order to suppress liquefaction due to adiabatic expansion. On the other hand, IF ₇ has a very high boiling point (about 5 ° C. at atmospheric pressure) compared to a general etching gas, and therefore liquefaction due to adiabatic expansion is particularly likely to occur. Therefore, the effect by the structure of the gas introduction part 5 is remarkable.

The shower plate 511 has a pressure difference between the pressure (Ps) in the space 513 between the dispersion plate 512 and the shower plate 511 and the pressure (Pc) in the processing chamber 50, that is, the pressure difference between the front and back of the shower plate 511 is 1 Pa or more and 10 Pa or less. Configured to be within range. Further, it is desirable that the pressure loss before and after the shower plate 511 is smaller than that of the dispersion plate 512.

By providing the shower plate 511, the processing gas diffused by the dispersion plate 512 can be further diffused and rectified to uniformly supply the processing gas (etching gas) to the substrate in the processing chamber 50.

It is preferable that the holes of the dispersion plate 512 and the shower plate 511 are provided at positions that do not overlap each other. Accordingly, it is possible to reduce the probability that the processing gas whose temperature has decreased when passing through the holes of the dispersion plate 512 directly enters the processing chamber 50 without colliding with the shower plate 511. Accordingly, since the processing gas whose temperature has been increased by colliding with the shower plate 511 can be supplied into the processing chamber 50, it is possible to prevent the gas from adsorbing to the substrate at a low temperature and the liquefied gas from directly adhering to the substrate. Generation of point-like singularities in the etching of the layer can be suppressed.

The temperature control is performed by the temperature adjustment unit of the susceptor 2 so that the processing temperature of the substrate in the processing chamber 50 is maintained in a range of 20 ° C. or more and 60 ° C. or less, for example. The temperature adjustment unit is configured by at least one of a heater and a chiller. The temperature of the processing chamber 50 (particularly the temperature of the wall surface) is set to room temperature (about 25 ° C.). Note that the temperature of the processing chamber 50 may be higher than room temperature. When IF ₇ gas is used as an etching gas, the melting point (97 ° C.) of IF ₅ that is a reaction byproduct when the silicon layer is etched. ).

However, when the silicon layer is etched using IF ₇ gas as an etching gas, it is desirable to lower the substrate processing temperature and the processing chamber 50 temperature in order to maintain high selectivity (described later) regarding the etching of the silicon layer. . In this case, since the temperature of the dispersion plate 512, the shower plate 511, and the surrounding gas is low, when the temperature of the etching gas is reduced due to adiabatic expansion, even if the etching gas collides with these, the temperature recovery does not proceed and the liquefaction occurs. (Misting) is particularly likely to occur. Therefore, under this condition, the effect (liquefaction suppression) by the configuration of the present embodiment becomes more remarkable.

The susceptor 2 can be moved up and down by an elevating mechanism (not shown), a substrate transfer position (height when a wafer is carried in / out of the processing chamber 50), and a substrate processing position (substrate) It is possible to move to the height at the time of etching.

According to the above-described embodiment, it is possible to reduce the occurrence of point-like singular points on the wafer surface.

(Etching gas partial pressure)
Next, the partial pressure of the etching gas supplied to the substrate will be described with reference to FIGS. Here, the partial pressure of the etching gas is the partial pressure of the etching gas supplied to the substrate, for example, the partial pressure of the etching gas with respect to the total pressure in the processing chamber 50.
FIG. 14 is a diagram showing the results of trials for evaluating the etching rate and uniformity multiple times (12 times) when IF ₇ gas is used as the etching gas and the partial pressure of IF ₇ gas is 80 Pa. FIG. 15 is a diagram showing the results of trials for evaluating the etching rate and uniformity multiple times (11 times) when IF ₇ gas is used as the etching gas and the partial pressure of IF ₇ gas is 300 Pa. FIG. 16 is a diagram showing the correlation between the partial pressure of IF ₇ gas, which is an etching gas, and the etching rate.

As shown in FIG. 14, when the wafer is processed using an IF ₇ gas having a high-speed removal etching characteristic of the silicon layer as an etching gas, an etching rate defect (E / R defect) sometimes occurs even in a process condition where etching proceeds. Sometimes.

For example, when a polysilicon (Poly-Si) film as a silicon layer is etched under the condition that the partial pressure of IF ₇ gas is 80 Pa, as shown in FIG. 14, the etching rate (Etch Rate) is approximately 600 to 800 nm / min. On the other hand, it was confirmed that the etching rate did not suddenly occur like # 6 and # 12.

Such a phenomenon is assumed to be caused by a reaction process between the IF ₇ gas and the silicon layer. That is, it is considered that IF ₇ is caused to undergo etching in the reaction process of the silicon layer formed on the substrate surface and IF ₇ + Si⇒SiF ₄ + IF ₅ . More specifically, when the surface of the substrate after etching is observed with an SEM or the like, it progresses in the form of a fine crater, so that the fluorine component of IF ₇ is separated from silicon where the silicon bond is easily cut off in sequence. It is considered that the etching of silicon proceeds by separating from the substrate surface as SiF ₄ (silicon tetrafluoride) and IF ₅ (iodine pentafluoride).

In the etching process of silicon using IF ₇ gas, in order to maintain high selectivity of silicon removal by IF ₇ gas, it goes through a reaction process in a low temperature range (for example, about 20 to 60 ° C.), and plasma or high temperature heating is performed. Etching proceeds slowly at the initial stage of the reaction because there is no supply of such high energy. For this reason, the variation in incubation time until SiF ₄ and IF ₅ are separated increases, and it is considered that an etching rate defect occurs due to a slight difference in conditions even under the same process conditions.

On the other hand, when polysilicon (Poly-Si), which is a silicon layer, is etched under the condition that the partial pressure of IF ₇ gas is 300 Pa, as shown in FIG. 15, the etching rate (Etch) is about 1000 to 1200 nm / min. Rate) is out. In this case, the sudden etching rate reduction phenomenon that occurred when the partial pressure of the IF ₇ gas was 80 Pa was not confirmed, and it was confirmed that stable etching (Etching) was reproduced.

Further, as shown in FIG. 16, the etching progress is very slow when the partial pressure of the IF ₇ gas is 40-50 Pa or less. In the range of 50 Pa to 200 Pa, although etching (etching) proceeds, the state is unstable. On the other hand, when the partial pressure of IF ₇ gas is 300 Pa or more, stable etching (Etching) can be performed. The partial pressure of IF ₇ gas is desirably 1000 Pa or less.

Therefore, the occurrence of etching defects can be prevented by setting the partial pressure (component force) of IF _{7 in} the processing chamber to a certain value or more, preferably 300 Pa or more.

(Effects of this embodiment)
According to the present embodiment, the pressure condition before and after the dispersion plate 512 is set to Pu / Ps ≦ 1.07, thereby reducing the occurrence of point-like singularities on the wafer surface in the etching process of the silicon layer using the etching gas. It becomes possible to do.
Further, when the partial pressure of the etching gas in the processing chamber is set to a certain value or more, preferably 300 Pa or more, it is possible to reduce the occurrence of defective etching of the silicon layer.
These effects are more remarkable when IF ₇ gas is used as an etching gas for removing silicon.

(1) Configuration of Substrate Processing Apparatus Hereinafter, a configuration of a substrate processing apparatus according to a specific example of the above-described embodiment will be described with reference to FIGS. The substrate processing apparatus according to the present embodiment is a single-wafer type substrate processing apparatus for carrying out one step of a semiconductor device manufacturing method.

FIG. 1 is a cross-sectional view of the main part during processing in the substrate processing apparatus according to the embodiment. FIG. 2 is a cross-sectional view of a main part of the substrate processing apparatus according to the embodiment, and shows a state where the susceptor is lowered and is in a transfer position where the transfer process can be performed. FIG. 3 is a cross-sectional view showing a gas introduction part according to the embodiment. FIG. 4 is a cross-sectional view for explaining the configuration of the susceptor of the substrate processing apparatus according to the embodiment. 5A is a cross-sectional view taken along the line AA in FIG. 4, and shows a heating element path. FIG. 5B is a cross-sectional view taken along the line BB in FIG. 4 and shows a cooling flow path. FIG. 6 is a top cross-sectional view for explaining the configuration of the transport system of the substrate processing apparatus according to the embodiment. FIG. 7 is a block diagram for explaining the structure of the controller of the substrate processing apparatus according to the embodiment.

(Processing container)
The substrate processing apparatus 10 according to the embodiment includes a processing container 30 for processing a substrate 1 such as a wafer, a substrate transport container 39 in which the substrate 1 is carried in and out adjacent to the processing container 30, and And a gas supply unit (gas supply system) 6 for supplying gas to the processing container 30.

The processing container 30 is composed of a container main body 31 having an upper opening and a lid 32 that closes the upper opening of the container main body 31, and forms a sealed processing chamber 50 therein. Note that the processing chamber 50 may be formed in a space surrounded by the lid 32 and the substrate mounting table (hereinafter referred to as susceptor) 2.

The container body 31 is provided with a susceptor 2 having a built-in exhaust port 7, a transfer port 8, and a temperature adjustment unit. The exhaust port 7 is provided on the upper portion of the container body 31 and communicates with the annular passage 14 formed in the upper inner periphery of the container body 31 so as to exhaust the inside of the processing chamber 50 through the annular passage 14. ing. The transfer port 8 is provided on one side below the exhaust port 7 of the container body 31, and the transfer port 8 is transferred from the substrate transfer chamber 40 formed in the transfer container 39 to the processing chamber 50 in the processing container 30. The unprocessed substrate 1 such as a silicon wafer is carried in via the substrate, or the processed substrate 1 is unloaded from the processing chamber 50 to the substrate transfer chamber 40. A gate valve 9 for isolating the atmosphere between the substrate transfer chamber 40 and the processing chamber 50 is provided at the transfer port 8 of the container body 31 so as to be openable and closable.

(Susceptor)
The susceptor 2 is provided in the processing chamber 50 of the processing container 30 so as to be movable up and down, and the substrate 1 is held on the surface of the susceptor 2. The substrate 1 is adjusted to a temperature within a predetermined range by a temperature adjusting unit (described later) built in the susceptor 2.

A plurality of support pins 4 are erected on the substrate support pin up-and-down mechanism 11, and these support pins 4 are provided so as to penetrate the temperature adjusting unit and the susceptor 2. The support pin 4 is configured to be able to protrude and retract from the surface of the susceptor 2 in accordance with raising or lowering one or both of the susceptor 2 and the substrate support pin raising / lowering mechanism 11.

As shown in FIG. 2, when the substrate processing apparatus 10 is at a position where the susceptor 2 is lowered and can perform a transport process (hereinafter, this position is referred to as a transport position A), the plurality of support pins 4 include the susceptor. 2, the substrate 1 can be supported on a plurality of support pins 4, and the substrate 1 can be loaded and unloaded between the processing chamber 50 and the substrate transfer chamber 40 via the transfer port 8. . Further, as shown in FIG. 1, the substrate processing apparatus 10 is in a position where the susceptor 2 is raised and can be processed through an intermediate position above the transfer position A (hereinafter, this position is set). The support pins 4 do not protrude from the susceptor 2 (that is, they are hidden below the upper surface of the susceptor 2), and the substrate 1 is placed on the susceptor 2.

The susceptor 2 is provided such that its support shaft 24 is connected to an elevating mechanism and moves up and down in the processing chamber 50. The lifting mechanism can adjust the vertical position of the susceptor 2 (processing position A, substrate processing position B, etc.) in the processing chamber 50 in multiple stages in each process such as a substrate loading process, a substrate processing process, and a substrate unloading process. It is configured as follows.

As shown in FIG. 4, the susceptor 2 is mainly composed of a plate portion 241 and a stem portion 242, and is designed so that it can be deployed to various devices by changing the design of the attachment portion 243. A heating element (heater) 244 that is a heating unit of the temperature adjustment unit and a cooling flow path (chiller) 245 that is a cooling unit are arranged on the plate unit 241 from above. As shown in FIGS. 5A and 5B, the heating element 244 and the cooling channel 245 are based on an arc-shaped element arrangement, and are arranged so as to be double or multiple. The diameters of the heating element 244 and the cooling channel 245 are, for example, as follows. D3: φ20 to 40 mm, D4: φ130 to 170 mm, D5: φ230 to 270 mm. As shown in FIGS. 5A and 5B, the portion indicated by the width D4 forms the inner peripheral portion, and the portion indicated by the width D5 forms the outer peripheral portion. That is, the heating element 244 and the cooling flow path 245 are each composed of at least an inner peripheral part and an outer peripheral part, and the inner peripheral part of the heating element 244 is provided so as to overlap the inner peripheral part of the cooling flow path 245 in the vertical direction. The outer peripheral portion of the heating element 244 is provided so as to overlap with the outer peripheral portion of the cooling channel 245 in the vertical direction. With such a configuration, heat transfer loss from the heating element 244 to the cooling flow path 245 can be reduced, and temperature control can be facilitated. The temperature adjustment unit may be configured by one of the heating element 244 and the cooling flow path 245.

The material of the susceptor 2 main body includes aluminum, stainless steel, Hastelloy and the like. An interface plate 246 is provided on the bottom surface of the stem portion 242, and is fixed to the attachment portion 243 with bolts (not shown) from the back surface. Further, a heat detector (T / C) 247 for detecting the temperature of the plate part 241 is inserted from below the attachment part 243. Since the plate portion 241 of the susceptor 2 needs to be integrally formed with the T / C guide tube 248, a material suitable for welding such as stainless steel or hastelloy is preferable.

As shown in FIG. 4, the heat detector 247 is configured such that the tip (heat detector) is disposed below the upper surface of the susceptor 2 and above the lower end of the heating element 244. In addition, by controlling a heating element power supply 253 and a refrigerant supply unit 264, which will be described later, by the control unit 500, electric power is supplied to the heating element 244 while supplying the refrigerant to the cooling channel 245. In this way, by providing the tip of the heat detector 247 below the upper surface of the susceptor 2 and above the lower end of the heating element 244, the temperature of the substrate due to reaction heat generated during substrate processing (etching processing) can be reduced. Changes can be detected. Further, by providing the cooling channel 245 below the heating element 244 (away from the substrate 1), it is possible to prevent the substrate 1 from being overcooled. Even if it is cooled too much, the substrate 1 can be heated because the heating element 244 is on the upper side. Furthermore, when the substrate 1 is placed on the susceptor 2, the temperature overshoot due to reaction heat generated when the substrate 1 is processed can be suppressed by reducing the power supply.

The initial temperature Tw of the substrate 1 is assumed to be around room temperature (about 20 to 25 ° C.). The susceptor 2 always introduces a refrigerant having a set temperature Tc (about 15 to 20 ° C.) into the cooling channel 245. The heat generating body 244 is adjusted to a set temperature Th (about 40 to 50 ° C.), and heat transfer between the heat generating body 244 and the cooling channel 245 is mainly performed when substrate processing is not performed. . After the substrate processing is started, the temperature of the substrate 1 rises due to reaction heat. As the temperature of the substrate 1 rises, the set temperature of the heating element 244 is changed, or the power supply is narrowed down based on the temperature rise result of the heat detector 247 so that the total heat supply amount due to the heat generation of the heating element 244 and the substrate 1 becomes equal. The control unit 500 performs monitoring and control. By performing the above process, the temperature of the substrate 1 after the process becomes Ttg, and the temperature can be kept below a predetermined temperature (for example, about 50 to 60 ° C.), suppressing deterioration of selectivity in silicon etching, It becomes possible to stabilize the performance of substrate processing.

The thickness of the substrate 1 is about 0.8 mm, and the substrate 1 is placed on a float pin (not shown) made of a material such as ceramics or quartz in order to prevent the back surface of the substrate 1 from coming into direct contact with the metal on the upper surface of the susceptor 2. Can also be placed. The height of the float pin is about 0.1 to 0.3 mm.

(Gas supply part)
The gas supply unit (gas supply system) 6 is connected to the gas introduction unit 5 and configured to supply a processing gas into the processing chamber 50 via the gas introduction unit 5. Specifically, the gas supply unit 6 is connected to the gas introduction unit 5 and communicates with the gas introduction port 516. The gas supply unit 6 opens and closes the gas flow paths provided in the

gas supply tubes

15a and 15b. Provided with

valves

18a and 18b and mass flow controllers (MFC) 16a and 16b as gas flow controllers, a desired type of gas is supplied into the processing chamber 50 at a desired gas flow rate and a desired gas ratio. It is configured to be possible. In this embodiment, an IF ₇ gas that is an etching gas in the processing gas is supplied from the gas supply source 17a, and an N ₂ gas that is an additive gas in the processing gas is supplied from the gas supply source 17b. The

gas supply sources

17 a and 17 b may be included in the gas supply unit 6. Further, the N ₂ gas supplied from the gas supply source 17b may be used as an inert gas (purge gas) in a purge process described later.

(Exhaust part)
The substrate processing apparatus 10 includes an exhaust unit 60 that exhausts the atmosphere in the processing chamber 50. The exhaust unit 60 includes an exhaust pipe 231, a pressure regulator (APC) 59, an on-off valve 243, and a vacuum pump 51, and is configured to exhaust the atmosphere in the processing chamber 50 from the exhaust port 7.
The pressure in the processing chamber 50 is controlled to a desired value by adjusting the gas supply amount and the exhaust amount by the

MFCs

16a and 16b and the APC 59 provided in the exhaust part.

(Gas introduction part)
The lid 32 is provided with a gas introduction part 5 and a gas supply part 6. The gas introduction unit 5 is disposed to face the substrate 1 in the processing chamber 50 and is provided to supply the processing gas into the processing chamber 50. As shown in FIG. 3, the gas introduction part 5 is provided so as to fit into the hole of the lid 32, and has a shower plate 511 that has a large number of gas holes and disperses the gas in a shower shape, and a plurality of gas holes. The dispersion plate 512, the space 513 provided between the shower plate 511 and the dispersion plate 512, the space 515 provided between the dispersion plate 512 and the ceiling plate 514 of the gas introduction unit 5, and the ceiling plate 514. And a gas inlet 516 provided in the main body.

Here, the dispersion plate 512 is provided with gas holes so as to realize a pressure condition where the pressure ratio Pu / Ps ≦ 1.07 before and after the dispersion plate 512. (That is, the pressure Pu of the space 515 is larger than the pressure Ps of the space 513, and the difference between Pu and Ps is 7% or less.) Specifically, for example, the hole diameter of the gas holes of the dispersion plate 512 is φ1.0 mm. above φ2.0mm less, the distribution of the pore provided such that the 0.5 / cm ² or less 0.1 / cm ² or more. Thereby, the pressure condition of Pu / Ps ≦ 1.07 is realized. When the diameter of the dispersion plate 512 is 30 cm, it is more preferable that the hole diameter is 1.0 mm and the number of holes is 110 (the hole distribution is 0.16 holes / cm ² ). In FIG. 3, the case of one dispersion plate 512 is shown, but the present invention is not limited to this, and a plurality of dispersion plates may be used. When a plurality of dispersion plates 512 are provided, the ratio of the upper pressure Pu of the uppermost dispersion plate to the lower pressure Ps of the lowermost dispersion plate may satisfy Pu / Ps ≦ 1.07. . The upper limit of Pu / Ps is usually Pu / Ps> 1.

Further, the shower plate 511 is provided with gas holes so as to realize a pressure condition in which the pressure difference Pc−Ps before and after the shower plate 511 is in a range of 1 Pa to 10 Pa. Specifically, for example, the diameter of the gas holes of the shower plate 511 is set to φ1.0 mm to φ3.0 mm, and the hole distribution is set to 2.9 / cm ^{2 to} 10 / cm ² . When the diameter of the shower plate 511 is 30 cm, it is more preferable that the gas holes of the shower plate 511 have a hole diameter of φ1.0 mm and the number of holes of 2600 (the distribution of the holes is 3.68 / cm ² ). By providing the shower plate 511, the processing gas diffused by the dispersion plate 512 can be further diffused and rectified to uniformly supply the processing gas (etching gas) to the substrate in the processing chamber 50.

Also, the hole of the dispersion plate 512 and the hole of the shower plate 511 are provided at positions that do not overlap each other. In particular, in the shower plate 511, when a gas hole is provided in the center of the plate, a point-like singular point is likely to be generated particularly in the etching process.

In the present embodiment, the structure of the dispersion plate 512 is configured as described above to realize the condition that the pressure ratio Pu / Pc ≦ 1.07 before and after the dispersion plate 512. However, the

MFC

16a, 16b or APC59 The pressure ratio Pu / Pc may be adjusted by controlling at least one of them. That is, the pressure ratio Pu / Pc is adjusted to a desired ratio by controlling the

MFCs

16a and 16b and the APC 59 to adjust the pressure Pu in the space 515 and the pressure in the processing chamber 50.

In the etching process using IF ₇ gas, the distance (Hs) between the shower plate 511 and the upper surface of the susceptor 2 is preferably set in the range of 10 to 30 mm. The etching rate can be kept high as compared with the case where the distance is set to another distance.

(Substrate transport system)
Next, the substrate transport system in this embodiment will be described with reference to FIG. A transport system for transporting a substrate includes an EFEM (Equipment FrontEnd Module) 100, a load lock chamber unit 200, and a transfer module unit (substrate transport chamber) 40.

The EFEM 100 includes an FOUP (Front Opening Unified Unified Pod) 110 and 120 and an atmospheric transfer robot 130 which is a first transfer unit that transfers a wafer from each FOUP to the

load lock chambers

250 and 260. The

FOUPs

110 and 120 have 25 wafers mounted thereon, and the arm unit of the atmospheric transfer robot 130 extracts the wafers from the FOUPs five by five.

The load lock chamber unit 200 includes

load lock chambers

250 and 260 and buffer units for holding the wafers transferred from the FOUP in the

load lock chambers

250 and 260, respectively.

The substrate transfer chamber 40 includes a transfer module 310 used as a transfer chamber, and the

load lock chambers

250 and 260 described above are transferred via a gate valve 313 (corresponding to the gate valve 9 in FIGS. 1 and 2). Attached to the module 310. The transfer module 310 is provided with a vacuum arm robot unit 320 used as a second transfer unit.

The

processing containers

30a and 30b constituting the process chamber unit 400 are attached to the transfer module 310 via

gate valves

313 and 314. Here, the

processing containers

30 a and 30 b have the same configuration as the processing container 30.

(controller)
The controller 500 controls the above-described units so as to perform a substrate processing process described later. As shown in FIG. 7, a controller 500 as a control unit (control means) is configured as a computer including a CPU (Central Processing Unit) 500a, a RAM (Random Access Memory) 500b, a storage device 500c, and an I / O port 500d. Has been. The RAM 500b, the storage device 500c, and the I / O port 500d are configured to exchange data with the CPU 500a via the internal bus 500e. For example, an input / output device 501 configured as a touch panel or the like is connected to the controller 500.

The storage device 500c includes, for example, a flash memory, a HDD (Hard Disk Drive), and the like. In the storage device 500c, a control program for controlling the operation of the substrate processing apparatus 10, a process recipe in which a procedure and conditions for substrate processing described later, and the like are stored are readable. Note that the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 500 to execute each procedure in a substrate processing step to be described later, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to as simply a program. When the term “program” is used in this specification, it may include only a process recipe alone, may include only a control program alone, or may include both. The RAM 500b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 500a are temporarily stored.

The I / O port 500d includes the above-described substrate support pin vertical mechanism 11, heating element power supply 253, APC 59,

MFCs

16a and 16b, on-off

valves

18a and 18b, exhaust pump 51, atmospheric transfer robot 52, gate valve 313, and vacuum arm robot unit. 320 or the like.

The CPU 500a is configured to read and execute a control program from the storage device 500c, and to read a process recipe from the storage device 500c in response to an operation command input from the input / output device 501. Then, the CPU 500a performs the vertical movement of the support pins 4 by the substrate support pin vertical mechanism 11, the heating / cooling operation of the substrate 1 by the temperature adjustment unit, the pressure adjustment operation by the APC 59, the mass flow so as to follow the contents of the read process recipe. The

controller

16a, 16b and the on-off

valves

18a, 18b are configured to control the flow rate adjustment operation of the processing gas, and the like. In FIG. 7, for example, a configuration such as a robot rotating unit or an atmospheric transfer robot surrounded by a broken line may be provided.

The controller 500 is an external storage device (eg, magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, USB memory (USB FlashＭＯDrive), memory card, etc. The above-mentioned program stored in the (semiconductor memory) 123 can be configured by installing it in a computer. The storage device 500c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. When the term “recording medium” is used in this specification, it may include only the storage device 500c, only the external storage device 123, or both. The program may be provided to the computer using a communication means such as the Internet or a dedicated line without using the external storage device 123.

(2) Substrate Processing Step Next, a substrate processing step that is performed as one step of the semiconductor manufacturing process according to the embodiment will be described with reference to FIG. Such a process is performed by the substrate processing apparatus 10 described above. In the following description, the operation of each unit constituting the substrate processing apparatus 10 is controlled by the controller 500.

(Substrate loading step S10)
First, as shown in FIG. 2, the substrate 1 having a silicon-containing film is carried into the processing chamber 50 from the substrate transfer chamber 40 through the transfer port 8 by the substrate transfer robot. The substrate 1 carried into the processing chamber 50 is placed on the support pins 4.

Next, the substrate support pin up / down mechanism 11 is lowered to place the substrate 1 on the susceptor 2. Here, the raising / lowering of the substrate support pin raising / lowering mechanism 11 is performed by being raised / lowered by the raising / lowering driving unit. The temperature adjusting unit provided in the susceptor 2 is set in advance to a predetermined temperature, and adjusts the substrate 1 to a predetermined substrate temperature of about 20 ° C. to a low temperature (for example, 20 ° C. to 60 ° C.). Here, the low temperature is a temperature range in which the processing gas including the etching gas is sufficiently vaporized, and is a temperature at which the film characteristics formed on the substrate 1 do not change. By setting the temperature of the substrate 1 to about 20 ° C. to a low temperature, when IF ₇ gas is used as an etching gas as in this embodiment, high selectivity (described later) with respect to the silicon layer in the etching process can be exhibited. .

Subsequently, the susceptor 2 or the susceptor 2 and the substrate support pin up / down mechanism 11 are raised, the susceptor 2 is moved to the substrate processing position B, and the substrate 1 is placed on the susceptor 2.

(Silicon film removal step S20)
Next, a processing gas containing a predetermined etching gas is supplied from the gas supply pipe 6 to the substrate 1 through the gas introduction unit 5, and the silicon layer (silicon film) formed on the surface of the substrate 1 is etched. Here, the silicon layer to be etched is a layer composed of Si element, such as polysilicon (Poly-Si), amorphous silicon (a-Si), single crystal silicon (c-Si), or the like.

As the etching gas, a halogen-containing gas is used, for example, a gas containing two or more halogen elements selected from fluorine (F), chlorine (Cl), bromine (Br), and iodine (I). Preferably, a gas containing two types of halogen elements is used. For example, iodine pentafluoride (IF ₅ ), iodine heptafluoride (IF ₇ ), bromine trifluoride (BrF ₃ ), bromine pentafluoride (BrF ₅ ), xenon difluoride (XeF ₂ ), trifluoride There is chlorine (ClF ₃ ) and the like. More preferably, IF ₇ gas having a characteristic capable of removing the silicon layer with high selectivity is used. Here, “selective” means, for example, that the etching rate of the silicon layer is higher than the etching rates of other types of layers. For example, the ratio of the etching rate of the silicon layer to the etching rate of other types of layers, SiO layer, SiN layer, and TiO layer, is 1E + 5 (= 1 × 10 ⁵ ), 1E + 5 (= 1 × 10 ⁵ ), 1E + 3, respectively. (= 1 × 10 ³ ).

In the present embodiment, a mixed gas obtained by mixing N ₂ gas as an additive gas in addition to the etching gas is supplied as a processing gas from the gas supply pipe 6 to the substrate 1 through the gas introduction part 5.

That is, in the silicon film removal process, the on-off

valves

18a and 18b are opened and the

MFCs

16a and 16b are controlled to supply the gas introduction source 5 with IF ₇ gas and N ₂ gas as processing gases from the

gas supply sources

17a and 17b, respectively. To do. Further, the pressure in the processing chamber 50 is maintained at a predetermined pressure by controlling the APC 59 simultaneously with the supply of the processing gas to adjust the exhaust amount.

For example, the supply amount (gas flow rate) of IF ₇ gas controlled by the MFC 16a is 10 to 1,000 sccm, and the supply pressure (pressure in the supply pipe on the gas supply source 17a side as viewed from the MFC 16a) is 0.005 to 0.2 MPa. . Further, the pressure in the supply pipe of the processing gas before the gas introduction port 516 (pressure in the supply pipe immediately before the gas is supplied to the space 515) is set to about 1 to 10 kPa. The pressure in the processing chamber 50 is set to 300 to 1000 Pa.

In particular, by controlling at least one of the MFC 16a and the APC 59 so that the partial pressure of the IF ₇ gas in the processing chamber 50 is 300 Pa or higher, the occurrence of defective etching of the silicon layer can be suppressed. For example, if the pressure (total pressure) in the processing chamber 50 is 550 Pa and the pressure ratio (partial pressure ratio) of IF ₇ gas and N ₂ gas is 4: 3, the partial pressure of IF ₇ gas is 315 Pa.

At this time, when the gas introduction part 5 is configured as described above and satisfies the conditions of the pressure ratio Pu / Pc = 1.07 before and after the dispersion plate 512 and the pressure difference Pc−Ps = 2 Pa before and after the shower plate 511, Pc = 550 Pa, Ps = 552 Pa, Pu = 593 Pa.

(Purge step S30)
After the silicon film is etched, it is preferable to perform a process of purging the processing gas in the processing chamber 50. In the purge step S <b> 30, the processing gas used for the etching process is discharged from the exhaust port 7 provided on the side surface of the processing chamber 50 and communicating with the annular path 14. Further, for example, N ₂ gas which is an inert gas is supplied into the processing chamber 50 from the gas supply pipe 15b. At this time, the supplied N ₂ gas is preferably supplied in a heated state. The supplied inert gas is preferably heated to a temperature higher than that of the above-described etching gas. As described above, by heating the inert gas to a temperature higher than that of the etching gas, it is possible to improve the removal efficiency of by-products generated during the etching. Furthermore, the temperature of the inert gas supplied to the processing chamber 50 is preferably heated to the sublimation temperature of either or both of by-products and residues generated in the etching process and supplied to the substrate. As a result, it is possible to further improve the removal efficiency of by-products generated during etching. More preferably, the temperature of the inert gas is higher than the sublimation temperature of the by-product and the residue generated in the etching process, or both, the heat resistance temperature of the circuit formed on the substrate, or around the processing chamber 50. Heat to a temperature lower than the heat resistance temperature of the O-ring.

(Substrate unloading step S40)
After the purging process is finished, the temperature is cooled to a temperature at which conveyance is possible. At this time, the support pins 4 may be raised to separate the substrate 1 from the susceptor 2.
When the substrate 1 is cooled to a temperature at which the substrate 1 can be transported and ready to be unloaded from the processing chamber 50, the substrate 1 is unloaded in the reverse procedure of the above-described substrate loading step S10.

<Other Embodiments of the Present Invention>
As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.
Further, the present invention is not limited to a semiconductor manufacturing apparatus that processes a semiconductor wafer such as the substrate processing apparatus according to the present embodiment, but an LCD (Liquid Crystal Display) manufacturing apparatus that processes a glass substrate, a solar cell manufacturing apparatus, or the like. The present invention can also be applied to a substrate processing apparatus and a MEMS (Micro Electro Mechanical Systems) manufacturing apparatus. For example, the present invention can be applied to a process for processing a transistor for driving an LCD or single crystal silicon, polycrystalline silicon, or amorphous silicon used for a solar battery.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.
<Appendix 1>
According to one aspect,
A processing chamber in which a substrate having a silicon layer on the surface is accommodated;
A gas supply system for supplying an etching gas for etching the silicon layer;
A gas introduction part for introducing the etching gas supplied from the gas supply system into the processing chamber;
With
The gas introduction unit includes a dispersion plate configured to pass the etching gas supplied from the supply pipe of the gas supply system to the gas introduction unit, and the etching gas that has passed through the dispersion plate passes through the dispersion plate. A shower plate configured to be introduced into the processing chamber,
The dispersion plate is configured such that the ratio of the pressure in the space between the supply pipe and the dispersion plate to the pressure in the space between the dispersion plate and the shower plate is 1.07 or less.
A substrate processing apparatus is provided.
<Appendix 2>
The substrate processing apparatus according to appendix 1, preferably,
The gas supply system is configured to supply iodine heptafluoride gas (IF7 gas) as the etching gas.
<Appendix 3>
The substrate processing apparatus according to

appendix

1 or 2, preferably,
The processing temperature of the substrate in the processing chamber ranges from 20 ° C. to 60 ° C.
<Appendix 4>
The substrate processing apparatus according to

appendix

1 or 2, preferably,
A temperature adjustment unit configured to change the temperature of the substrate;
A control unit configured to control the temperature adjusting unit so as to maintain a temperature of the substrate in a range of 20 ° C. or more and 60 ° C. or less.
<Appendix 5>
The substrate processing apparatus according to appendix 4, preferably,
The temperature adjusting unit is provided on a substrate mounting table on which the substrate is mounted, and is configured by at least one of a heater and a chiller.
<Appendix 6>
The substrate processing apparatus according to any one of appendices 1 to 5, preferably,
The temperature of the processing chamber is room temperature.
<Appendix 7>
The substrate processing apparatus according to any one of appendices 2 to 6, preferably,
The partial pressure of the iodine heptafluoride gas in the processing chamber is in the range of 300 Pa to 1000 Pa.
<Appendix 8>
The substrate processing apparatus according to appendix 7, preferably,
A pressure adjusting valve (APC valve) for adjusting the pressure in the processing chamber in an exhaust pipe for exhausting the processing chamber;
A controller configured to control the pressure regulating valve so that the pressure in the processing chamber is 300 Pa or more and 1000 Pa or less;
Is provided.
<Appendix 9>
The substrate processing apparatus according to any one of appendices 1 to 8, preferably,
The shower plate is configured such that a pressure difference between a pressure in a space between the dispersion plate and the shower plate and a pressure in the processing chamber is in a range of 1 Pa to 10 Pa.
<Appendix 10>
The substrate processing apparatus according to any one of appendices 1 to 9, preferably,
The dispersion plate and the shower plate are provided to be parallel to each other,
Each of the dispersion plate and the shower plate includes a plurality of holes through which the etching gas passes,
The hole of the dispersion plate and the hole of the shower plate are provided at positions that do not overlap each other.
<Appendix 11>
The substrate processing apparatus according to any one of appendices 1 to 10, preferably,
The dispersion plate has a plurality of holes in which the etching gas passes, the diameter of each hole or 1.0 mm, the distribution of holes per unit area is 0.1 / cm ² or more.
<Appendix 12>
The substrate processing apparatus according to any one of appendices 1 to 11, preferably
A plurality of the dispersion plates are provided.
<Appendix 13>
In the substrate processing apparatus of any one of appendices 1 to 12,
The shower plate has a plurality of holes through which the etching gas passes, the diameter of each hole is Φ1.0 mm or more, and the distribution of holes per unit area is 2.9 / cm ² or more.
<Appendix 14>
According to yet another aspect,
Carrying a substrate having a silicon layer on the surface into the processing chamber;
Supplying an etching gas for etching the silicon layer from a supply pipe into the processing chamber through a gas introduction unit;
Etching the silicon layer on the substrate surface with the etching gas supplied into the processing chamber,
The gas introduction unit includes a dispersion plate configured to pass the etching gas supplied from the supply pipe to the gas introduction unit, and the etching gas that has passed through the dispersion plate passes and is introduced into the processing chamber. With a shower plate configured to be
The dispersion plate is configured such that the ratio of the pressure in the space between the supply pipe and the dispersion plate to the pressure in the space between the dispersion plate and the shower plate is 1.07 or less.
A semiconductor device manufacturing method or a substrate processing method is provided.
<Appendix 15>
According to yet another aspect,
A procedure for carrying a substrate having a silicon layer on the surface thereof into the processing chamber;
A procedure for supplying an etching gas for etching the silicon layer from a supply pipe into the processing chamber through a gas introduction unit;
A program for causing a computer to execute a procedure for etching a silicon layer on the surface of the substrate with the etching gas supplied into the processing chamber, or a computer-readable recording medium recording the program,
The gas introduction unit includes a dispersion plate configured to pass the etching gas supplied from the supply pipe to the gas introduction unit, and the etching gas that has passed through the dispersion plate passes and is introduced into the processing chamber. With a shower plate configured to be
The dispersion plate is configured such that the ratio of the pressure in the space between the supply pipe and the dispersion plate to the pressure in the space between the dispersion plate and the shower plate is 1.07 or less.
A program or recording medium is provided.

According to the technique according to the present invention, the quality of the substrate to be processed can be improved in the process of etching the silicon layer on the substrate using the etching gas.

1 Substrate 2 Susceptor 5 Gas introduction part 6 Gas supply part (gas supply system)
8 Transport Port 10 Substrate Processing Apparatus 30 Processing Container 31 Container Body 32 Lid 50 Processing Chamber 60 Exhaust Portion (Exhaust System)

Claims

A processing chamber in which a substrate having a silicon layer on the surface is accommodated;
A gas supply system for supplying an etching gas for etching the silicon layer;
A gas introduction part for introducing the etching gas supplied from the gas supply system into the processing chamber,
The gas introduction unit includes a dispersion plate configured to pass the etching gas supplied from the supply pipe of the gas supply system to the gas introduction unit, and the etching gas that has passed through the dispersion plate passes through the dispersion plate. A shower plate configured to be introduced into the processing chamber,
The dispersion plate is configured such that the ratio of the pressure in the space between the supply pipe and the dispersion plate to the pressure in the space between the dispersion plate and the shower plate is 1.07 or less.
Substrate processing equipment.
The substrate processing apparatus according to claim 1, wherein the gas supply system is configured to supply iodine heptafluoride gas as the etching gas.
A temperature adjustment unit configured to change the temperature of the substrate;
The substrate processing apparatus according to claim 2, further comprising: a control unit configured to control the temperature adjusting unit so as to maintain a temperature of the substrate in a range of 20 ° C. or more and 60 ° C. or less.
4. The substrate processing apparatus according to claim 3, wherein the temperature adjustment unit is provided on a substrate mounting table on which the substrate is mounted, and is configured by at least one of a heater and a chiller.
The substrate processing apparatus according to claim 1, wherein the temperature of the processing chamber is room temperature.
The substrate processing apparatus according to claim 2, wherein a partial pressure of the etching gas in the processing chamber is 300 Pa or more.
A pressure adjusting valve provided in an exhaust pipe for exhausting the processing chamber to adjust the pressure in the processing chamber;
The substrate processing apparatus according to claim 2, further comprising: a control unit configured to control the pressure adjustment valve so that the pressure in the processing chamber is 300 Pa or more and 1000 Pa or less.
The substrate processing according to claim 2, wherein the shower plate is configured such that a pressure difference between a pressure in a space between the dispersion plate and the shower plate and a pressure in the processing chamber is within a range of 1 Pa to 10 Pa. apparatus.
The dispersion plate and the shower plate are provided to be parallel to each other,
Each of the dispersion plate and the shower plate includes a plurality of holes through which the etching gas passes,
The substrate processing apparatus according to claim 2, wherein the holes of the dispersion plate and the holes of the shower plate are provided at positions that do not overlap each other.
The substrate processing apparatus according to claim 9, wherein a diameter of the plurality of holes provided in the dispersion plate is Φ1.0 mm or more, and a distribution of the plurality of holes per unit area is 0.1 or more / cm 2 .
10. The substrate processing apparatus according to claim 9, wherein a plurality of the dispersion plates are provided.
The substrate processing apparatus according to claim 9, wherein a diameter of the plurality of holes provided in the shower plate is Φ1.0 mm or more, and a distribution of the plurality of holes per unit area is 2.9 pieces / cm 2 or more.
Carrying a substrate having a silicon layer on the surface into the processing chamber;
Supplying an etching gas for etching the silicon layer from a supply pipe into the processing chamber through a gas introduction unit;
Etching the silicon layer on the substrate surface with the etching gas supplied into the processing chamber,
The gas introduction unit includes a dispersion plate configured to pass the etching gas supplied from the supply pipe to the gas introduction unit, and the etching gas that has passed through the dispersion plate passes and is introduced into the processing chamber. With a shower plate configured to be
The dispersion plate is configured such that the ratio of the pressure in the space between the supply pipe and the dispersion plate to the pressure in the space between the dispersion plate and the shower plate is 1.07 or less.
A method for manufacturing a semiconductor device.
14. The method of manufacturing a semiconductor device according to claim 13, wherein the etching gas is iodine heptafluoride gas.
15. The method of manufacturing a semiconductor device according to claim 14, wherein in the step of etching the silicon layer on the surface of the substrate with the etching gas, the temperature of the substrate is set in a range of 20 ° C. or more and 60 ° C. or less.
A procedure for carrying a substrate having a silicon layer on the surface thereof into the processing chamber;
An etching gas for etching the silicon layer is a procedure for supplying the processing chamber from a supply pipe through the gas introduction unit,
The gas introduction unit includes a dispersion plate configured to pass the etching gas supplied from the supply pipe to the gas introduction unit, and the etching gas that has passed through the dispersion plate is introduced into the processing chamber. And a ratio of the pressure in the space between the supply pipe and the dispersion plate to the pressure in the space between the dispersion plate and the shower plate is 1.07 or less. A plate is configured, and a procedure for supplying the etching gas into the processing chamber;
A computer-readable recording medium storing a program for causing a computer to execute a procedure for etching a silicon layer on the substrate surface with the etching gas supplied into the processing chamber.