WO2016147296A1 - Substrate treating device, method for manufacturing semiconductor, and recording medium - Google Patents

Abstract

Provided is a technology with which it is possible to obtain uniform film thickness during a substrate treatment in which plasma is used. It is possible to provide a technology having: a reaction tube for forming a treatment chamber in which a substrate is treated; a gas supply part provided inside the treatment chamber, the gas supply part supplying, into the treatment chamber, a reaction gas and a feedstock gas for forming a prescribed film on the surface of the substrate; a plasma generation device for exciting the reaction gas supplied by the gas supply part; and a magnetic-field-generating device provided outside the plasma generation device, the magnetic-field-generating device generating a magnetic field in a direction that is the same as the direction in which the reaction gas excited by the plasma generation device is supplied.

Description

Substrate processing apparatus, semiconductor device manufacturing method, and recording medium

The present invention relates to a substrate processing apparatus using plasma, a method for manufacturing a semiconductor device, and a recording medium.

As one step of a semiconductor device manufacturing process, there is a case where a substrate processing step is performed in which a processing gas is supplied into a processing chamber containing a substrate to form a thin film on the substrate.

In the above-described substrate processing step, it is desired to perform film formation at a relatively low temperature using a catalyst gas or plasma in order to reduce the thermal history received by the semiconductor device.

However, in the conventional substrate processing process using plasma, a sufficient amount of plasma cannot reach the substrate surface due to attenuation of the plasma itself or attenuation due to collision with gas, etc., and the film thickness to be formed is uniform. There was a case that could not get to.

An object of the present invention is to provide a technique capable of obtaining a uniform film thickness in substrate processing using plasma.

According to one aspect of the invention,
A reaction tube forming a processing chamber for processing a substrate;
A gas supply unit which is provided in the processing chamber and supplies a source gas and a reaction gas which form a predetermined film on the surface of the substrate into the processing chamber;
A plasma generating apparatus for exciting the reaction gas supplied from the gas supply unit;
A magnetic field generation device that is provided outside the plasma generation device and generates a magnetic field in the same direction as a supply direction of the reaction gas excited by the plasma generation device;
A technique is provided.

According to the present invention, it is possible to provide a technique capable of obtaining a uniform film thickness in substrate processing using plasma.

It is a schematic block diagram of the vertical processing furnace of the substrate processing apparatus used suitably by this embodiment, and is a figure which shows a processing furnace part with a vertical cross section. FIG. 2 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus preferably used in the present embodiment, and is a view showing a processing furnace part by a cross-sectional view taken along line AA of FIG. It is the figure which showed the installation position of the magnetic field production | generation part of the substrate processing apparatus used suitably by this embodiment. (A) is the schematic which showed the movement with respect to the magnetic field of the cation and electron of a plasma. (B) is the schematic which showed the relationship between plasma and a magnetic field. It is a schematic block diagram of the controller of the substrate processing apparatus used suitably by this embodiment. It is a figure which shows the processing flow in this embodiment. It is a figure which shows the timing of the gas supply in the process sequence of this embodiment, the production | generation of a plasma, and the production | generation of a magnetic field. It is a figure which shows the modification 1 of the timing of the gas supply in the process sequence of this embodiment, the production | generation of a plasma, and the production | generation of a magnetic field. It is a figure which shows the modification 2 of the timing of the gas supply in the process sequence of this embodiment, the production | generation of a plasma, and the production | generation of a magnetic field. It is the figure which showed the installation position of the magnetic field production | generation part of the substrate processing apparatus used suitably by this embodiment as the outer side of a heater. It is the figure which showed the case where the magnetic field production | generation part of the substrate processing apparatus used suitably by this embodiment was provided with two or more as a permanent magnet. It is the figure which showed the case where the cooling device was provided around the magnetic field production | generation part of the substrate processing apparatus used suitably by this embodiment.

<One Embodiment of the Present Invention>
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

(1) Configuration of Substrate Processing Apparatus One embodiment of the substrate processing apparatus of the present invention will be described with reference to FIGS. 1 and 2. The present invention is not limited to the substrate processing apparatus according to the present embodiment, and can be suitably applied to a substrate processing apparatus having a single wafer type, hot wall type, or cold wall type processing furnace.

(Processing room)
As shown in FIG. 1, the processing furnace 202 includes a reaction tube 203 that constitutes a reaction vessel (processing vessel). The reaction tube 203 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened. A processing chamber 201 is formed in a hollow cylindrical portion of the reaction tube 203, and is configured to be able to accommodate wafers 200 as substrates in a state of being aligned in multiple stages in a horizontal posture and in a vertical direction by a boat 217 described later.

Below the reaction tube 203, a seal cap 219 is provided as a furnace opening lid capable of airtightly closing the lower end opening of the reaction tube 203. The seal cap 219 is configured to contact the lower end of the reaction tube 203 from the lower side in the vertical direction. The seal cap 219 is made of a metal such as stainless steel and has a disk shape. An O-ring 220 is provided on the upper surface of the seal cap 219 as a seal member that contacts the lower end of the reaction tube 203. On the opposite side of the seal cap 219 from the processing chamber 201, a rotation mechanism 267 for rotating a boat 217 as a substrate holder described later is installed. A rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be lifted and lowered in the vertical direction by a boat elevator 115 as a lifting mechanism vertically installed outside the reaction tube 203. The boat elevator 115 is configured such that the boat 217 can be carried into and out of the processing chamber 201 by moving the seal cap 219 up and down.

(Substrate holder)
The boat 217 as a substrate holder is made of a heat-resistant material such as quartz or silicon carbide, and supports a plurality of wafers 200 in a horizontal posture and in a state where the centers are aligned with each other and supported in multiple stages. It is configured. A heat insulating member 218 made of a heat resistant material such as quartz or silicon carbide is provided at the lower part of the boat 217 so that heat from the heater 207 described later is hardly transmitted to the seal cap 219 side. ing. The heat insulating member 218 may be constituted by a plurality of heat insulating plates made of a heat resistant material such as quartz or silicon carbide, and a heat insulating plate holder that supports the heat insulating plates in a horizontal posture in multiple stages.

(Heating device)
The processing furnace 202 has a heater 207 as a heating device (heating mechanism). The heater 207 has a cylindrical shape, and is vertically installed by being supported by a heater base (not shown) as a holding plate so as to be concentric with the reaction tube 203. The heater 207 also functions as an activation mechanism that activates gas with heat, as will be described later.

(Gas supply part)
In the lower part of the reaction tube 203 in the processing chamber 201, a first nozzle 233a as a first gas introduction unit and a second nozzle 233b as a second gas introduction unit are provided on the lower side wall of the reaction tube 203 or not shown. It is provided so as to penetrate the side wall surface of the manifold. A first gas supply pipe 232a and a second gas supply pipe 232b are connected to the first nozzle 233a and the second nozzle 233b, respectively. A third gas supply pipe 232c is connected to the second gas supply pipe 232b. As described above, the reaction tube 203 is provided with the two nozzles 233a and 233b and the three gas supply tubes 232a, 232b, and 232c. It is comprised so that it can supply.

The first gas supply pipe 232a is provided with a mass flow controller (hereinafter referred to as MFC) 241a that is a flow rate controller (flow rate control unit) and a valve 243a that is an on-off valve in order from the upstream direction. A first inert gas supply pipe 232d is connected to the downstream side of the valve 243a of the first gas supply pipe 232a. The first inert gas supply pipe 232d is provided with an MFC 241d as a flow rate controller (flow rate control unit) and a valve 243d as an on-off valve in order from the upstream direction. The first nozzle 233a is connected to the downstream end of the first gas supply pipe 232a. The first nozzle 233a is provided in an annular space between the inner wall of the reaction tube 203 and the wafer 200 so as to rise upward from the lower portion of the inner wall of the reaction tube 203 in the stacking direction of the wafer 200. It has been. That is, the first nozzle 233a is provided on the side of the wafer arrangement area where the wafers 200 are arranged. The first nozzle 233a is configured as an L-shaped long nozzle. A gas supply port 248a for supplying gas is provided on the side surface of the first nozzle 233a. The gas supply port 248 a is opened so as to face the center of the reaction tube 203, and gas can be supplied toward the wafer 200. A plurality of gas supply ports 248a are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch.

Mainly, the first gas supply system is configured by the first gas supply pipe 232a, the MFC 241a, and the valve 243a. The first nozzle 233a may be included in the first gas supply system. Further, a first inert gas supply system is mainly configured by the first inert gas supply pipe 232d, the MFC 241d, and the valve 243d. The first inert gas supply system also functions as a purge gas supply system.

The second gas supply pipe 232b is provided with an MFC 241b and an on-off valve 243b in order from the upstream direction. A second inert gas supply pipe 232e is connected to the downstream side of the valve 243b of the second gas supply pipe 232b. The second inert gas supply pipe 232e is provided with an MFC 241e and a valve 243e that is an on-off valve in order from the upstream direction. The second nozzle 233b is connected to the downstream end of the second gas supply pipe 232b. The second nozzle 233b is provided in a buffer chamber 237 that is a gas dispersion space.

The buffer chamber 237 is provided in an annular space between the inner wall of the reaction tube 203 and the wafer 200 in a portion extending from the lower portion to the upper portion of the inner wall of the reaction tube 203 along the loading direction of the wafer 200. That is, the buffer chamber 237 is provided on the side of the wafer arrangement region. A gas supply port 248 c for supplying a gas is provided at the end of the buffer chamber 237 adjacent to the wafer 200. The gas supply port 248 c is opened so as to face the center of the reaction tube 203, and gas can be supplied toward the wafer 200. A plurality of gas supply ports 248c are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch.

The second nozzle 233b is located at the end of the buffer chamber 237 opposite to the end where the gas supply port 248c is provided, and extends upward from the bottom of the inner wall of the reaction tube 203 in the stacking direction of the wafer 200. It is provided to stand up. That is, the second nozzle 233b is provided on the side of the wafer arrangement region. The second nozzle 233b is configured as an L-shaped long nozzle. A gas supply hole 248b for supplying gas is provided on the side surface of the second nozzle 233b. The gas supply hole 248 b is opened to face the center of the buffer chamber 237. A plurality of gas supply holes 248 b are provided from the lower part to the upper part of the reaction tube 203, similarly to the gas supply port 248 c of the buffer chamber 237. Each of the plurality of gas supply holes 248b has the same opening area from the upstream side (lower part) to the downstream side (upper part) when the differential pressure in the buffer chamber 237 and the processing chamber 201 is small. However, when the differential pressure is large, the opening area is increased or the opening pitch is decreased from the upstream side toward the downstream side.

In the present embodiment, by adjusting the opening area and the opening pitch of the gas supply holes 248b of the second nozzle 233b from the upstream side to the downstream side as described above, first, from each of the gas supply holes 248b, Although there is a difference in flow velocity, gas with the same flow rate is ejected. The gas ejected from each of the gas supply holes 248b is once introduced into the buffer chamber 237, and the difference in gas flow velocity is made uniform in the buffer chamber 237. That is, the gas ejected into the buffer chamber 237 from each of the gas supply holes 248b of the second nozzle 233b is reduced in the particle velocity of each gas in the buffer chamber 237, and then is processed from the gas supply port 248c of the buffer chamber 237 into the processing chamber. It spouts into 201. Accordingly, when the gas ejected into the buffer chamber 237 from each of the gas supply holes 248b of the second nozzle 233b is ejected into the processing chamber 201 from each of the gas supply ports 248c of the buffer chamber 237, a uniform flow rate is obtained. And a gas having a flow rate.

A second gas supply system is mainly configured by the second gas supply pipe 232b, the MFC 241b, and the valve 243b. Note that the second nozzle 233b and the buffer chamber 237 may be included in the second gas supply system. In addition, a second inert gas supply system is mainly configured by the second inert gas supply pipe 232e, the MFC 241e, and the valve 243e. The second inert gas supply system also functions as a purge gas supply system.

The third gas supply pipe 232c is provided with an MFC 241c and a valve 243c that is an on-off valve in order from the upstream direction. A third inert gas supply pipe 232f is connected to the downstream side of the valve 243c of the third gas supply pipe 232c and upstream of the connection portion with the second gas supply pipe. The third inert gas supply pipe 232f is provided with an MFC 241f and a valve 243f that is an on-off valve in order from the upstream direction. The downstream end of the third gas supply pipe 232c is connected to the downstream side of the valve 243b of the second gas supply pipe 232b.

A third gas supply system is mainly configured by the third gas supply pipe 232c, the MFC 241c, and the valve 243c. The second gas supply pipe 232b may be considered to include the second nozzle 233b and the buffer chamber 237 in the third gas supply system on the downstream side of the connection portion between the second gas supply pipe 232b and the third gas supply pipe 232c. In addition, a third inert gas supply system is mainly configured by the third inert gas supply pipe 232f, the MFC 241f, and the valve 243f. The third inert gas supply system also functions as a purge gas supply system.

From the first gas supply pipe 232a, for example, dichlorosilane (SiH ₂ Cl ₂ , abbreviated as DCS) gas is used as a source gas containing a predetermined element, that is, a source gas containing silicon (Si) as a predetermined element (silicon-containing gas). , MFC 241a, valve 243a, and first nozzle 233a are supplied into the processing chamber 201. That is, the first gas supply system is configured as a source gas supply system (silicon-containing gas supply system). At the same time, the inert gas may be supplied from the first inert gas supply pipe 232d into the first gas supply pipe 232a via the MFC 241d and the valve 243d.

From the second gas supply pipe 232b, as a first reaction gas containing a predetermined element, that is, a source gas containing nitrogen atoms (N) as a predetermined element (nitrogen-containing gas), for example, NH ₃ gas is used as an MFC 241b and a valve 243b. The second nozzle 233b and the buffer chamber 237 are supplied into the processing chamber 201. That is, the second gas supply system is configured as a reaction gas supply system. At the same time, the inert gas may be supplied from the second inert gas supply pipe 232e into the second gas supply pipe 232b via the MFC 241e and the valve 243e.

From the third gas supply pipe 232c, for example, oxygen (O ₂ ) gas is used as the second reaction gas containing the predetermined element, that is, the source gas (oxygen-containing gas) containing oxygen atoms (O) as the predetermined element, as the MFC 241c. The gas is supplied into the processing chamber 201 through the valve 243c, the second gas supply pipe 232b, the second nozzle 233b, and the buffer chamber 237. That is, the third gas supply system is configured as a hydrogen-containing gas supply system. At the same time, the inert gas may be supplied from the third inert gas supply pipe 232f into the third gas supply pipe 232c via the MFC 241f and the valve 243f.

In the present embodiment, NH ₃ gas and O ₂ gas are supplied from the same nozzle into the processing chamber 201 (in the buffer chamber 237), but each is processed from a separate nozzle and a separate buffer chamber. You may make it supply in the chamber 201. FIG. That, NH ₃ gas only nozzle and the buffer chamber and the O ₂ gas only nozzle and the buffer chamber may be provided, respectively.
Further, a buffer chamber for accommodating the first nozzle 233a may be provided.

(Plasma generator)
In the buffer chamber 237, as shown in FIG. 2, there are a first rod-shaped electrode 269 which is a first electrode having a long and narrow structure as a plasma generation device, and a second electrode which is a counter electrode of the first electrode. A certain second rod-like electrode 270 is arranged along the stacking direction of the wafers 200 from the lower part to the upper part of the reaction tube 203. Each of the first rod-shaped electrode 269 and the second rod-shaped electrode 270 is provided in parallel with the second nozzle 233b. Each of the first rod-shaped electrode 269 and the second rod-shaped electrode 270 is protected by being covered with an electrode protection tube 275 that is a protection tube that protects each electrode from the top to the bottom. Either the first rod-shaped electrode 269 or the second rod-shaped electrode 270 is connected to the high-frequency power source 273 via the matching unit 272, and the other is connected to the ground as the reference potential. As a result, plasma is generated in the plasma generation region 224 between the first rod-shaped electrode 269 and the second rod-shaped electrode 270. The first rod-shaped electrode 269, the second rod-shaped electrode 270, the electrode protection tube 275, the matching unit 272, and the high-frequency power source 273 mainly constitute a plasma source as a plasma generator (plasma generating unit). The plasma source functions as an activation mechanism that activates a gas with plasma as will be described later.

The electrode protection tube 275 has a structure in which each of the first rod-shaped electrode 269 and the second rod-shaped electrode 270 can be inserted into the buffer chamber 237 while being isolated from the atmosphere of the buffer chamber 237. Here, if the inside of the electrode protection tube 275 has the same atmosphere as the outside air (atmosphere), the first rod-shaped electrode 269 and the second rod-shaped electrode 270 inserted into the electrode protection tube 275 are oxidized by heat from the heater 207. Will be. Therefore, the inside of the electrode protection tube 275 is filled or purged with an inert gas such as nitrogen to suppress the oxygen concentration sufficiently low to prevent oxidation of the first rod-shaped electrode 269 or the second rod-shaped electrode 270. An active gas purge mechanism is provided.

The plasma generation apparatus described above is not limited to the one using the above-described capacitively coupled plasma (abbreviation: CCP), but is also an inductively coupled plasma (abbreviation: ICP) electron cyclotron resonance plasma (Electrotron Cyclotron Resonance Plasma). Either an abbreviation: ECR plasma, a helicon wave excited plasma (Helicon Wave Excited Plasma, abbreviation: HWP), or a surface wave plasma (Surface Wave Plasma, abbreviation: SWP) may be used.

(Gas exhaust means)
The reaction tube 203 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201. The exhaust pipe 231 is evacuated through a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure adjustment unit). A vacuum pump 246 as an exhaust device is connected. The APC valve 244 is an open / close valve configured to open and close the valve to stop evacuation / stop of evacuation in the processing chamber 201 and further adjust the pressure by adjusting the valve opening. By adjusting the opening degree of the APC valve 244 based on the pressure information detected by the pressure sensor 245 while operating the vacuum pump 246, the pressure in the processing chamber 201 becomes a predetermined pressure (degree of vacuum). It is configured so that it can be evacuated. An exhaust system is mainly configured by the exhaust pipe 231, the APC valve 244, the vacuum pump 246, and the pressure sensor 245.

(Magnetic field generator)
As shown in FIGS. 1, 2, and 3, between the reaction tube 203 and the heater 207, there is a magnetic coil 280 (electromagnet) as a magnetic field generating device that generates a magnetic field (magnetic field) in the processing chamber 201. A variable DC power supply 282 is provided in connection. The current flowing in the magnetic coil 280 is the direction in which the direction of the magnetic field generated inside the coil by the variable DC power source 282 as the power source is from the heater 207 side to the reaction tube 203 side (the direction of the magnetic force line 402 that is the broken line arrow in FIG. ) Is generated, and the positive terminal of the variable DC power supply 282 is electrically connected to the conductive wire 280a which is the input / output terminal of the magnetic coil 280, and the input / output terminal of the magnetic coil 280 is The negative terminal of the variable DC power supply 282 is electrically connected to the conducting wire 280b. Further, the magnetic coil 280 is arranged so as to cover the outer wall of the reaction tube 203 at a position corresponding to the buffer chamber 237 as shown in FIG. That is, the magnetic coil 280 is disposed so as to cover and partially cover a part of the outer wall surface of the reaction tube 203, and the direction of the magnetic field generated by the magnetic coil 280 is parallel to the surface of the wafer 200, more specifically, the processing. It is provided so as to be generated in a direction parallel to the direction in which the gas is supplied.
Here, although the magnetic coil 280 is shown as the magnetic field generating device, the magnetic field generating device is not limited to this, and may include the conducting wires 280a and 280b and the variable DC power supply 282.

Here, the property of the magnetic field on the plasma will be briefly described with reference to FIG.
In FIG. 4, a plasma (active species, radical) 401 generated by exciting a reactive gas has a positive ion 401a having a positive charge and an electron 401b having a negative charge, and the plasma is generated in a magnetic field. When 401 is present, as shown in FIG. 4A, the electron 401b performs a spiral motion with a small diameter in the clockwise direction around the magnetic force line, and the positive ion 401a is in the direction opposite to the electron 401b around the magnetic force line. Perform a counterclockwise spiral movement around Such a spiral motion (rotational motion) is called a so-called cyclotron motion, and as a result of this motion, the plasma 401 moves along the magnetic field lines 402 in the same direction as the direction of the magnetic field, as shown in FIG.

Using the property that the magnetic field exerts on the plasma in this way, the magnetic coil 280 is generated in the buffer chamber 237 by installing at least the gas supply port 248c of the buffer chamber 237 so as to cover from the lowermost part to the uppermost part. It is possible to efficiently affect the generated plasma with a magnetic field, and the magnetic field is generated in the direction from the heater 207 side to the reaction tube 203 side (preferably the direction from the gas supply port 248c of the buffer chamber 237 to the wafer 200). As described above, by passing a current through the magnetic coil 280, it is possible to obtain a force for moving the plasma generated in the buffer chamber 237 from the buffer chamber 237 to the wafer 200 by the magnetic field.
As a result of this configuration, it is easier to move the wafer 200 while maintaining the activated state of the plasma as compared with the case where no magnetic field is generated, and the plasma is supplied uniformly onto the wafer 200. Is possible.

At this time, the magnetic coil 281 is arranged at a position facing the magnetic coil 280 provided on the buffer chamber 237 side, and the power supply is variable so that the magnetic field is generated in the same direction as the magnetic field generated by the magnetic coil 280. The positive side terminal of the DC power supply 283 may be connected to the lead wire 281b which is an input / output terminal of the magnetic coil, and the negative side terminal may be connected to the lead wire 281a. In that case, the magnetic field generator may include the magnetic coil 281, the conductive wires 281 a and 281 b, and the variable DC power supply 283.
With this configuration, the directivity of the magnetic field generated in the reaction tube 203 is strengthened, and plasma can be supplied onto the wafer 200 more efficiently.

In the present embodiment, the direction of the magnetic field is described so as to be directed from the heater 207 side to the reaction tube 203 side. However, the magnetic field is preferably generated in the direction from the gas supply port 248c of the buffer chamber 237 toward the wafer 200. Plasma can be efficiently supplied onto the wafer 200.
In the present embodiment, the magnetic coils 280 and 281 which are magnetic field generating devices for generating a magnetic field have been described as being provided between the heater 207 and the reaction tube 203. However, the present invention is not limited to this, as shown in FIG. It may be configured to reduce the influence of the heating received from the heater 207 by being provided outside the heater.

In the present embodiment, a magnetic coil is exemplified as a magnetic field generation device that generates a magnetic field. However, the present invention is not limited thereto, and one permanent magnet 290a, 290b, and 290c that does not require a power source is provided as shown in FIG. The permanent magnets 291a, 291b, and 291c may be provided at positions facing the permanent magnets 290a, 290b, and 290c via the reaction tube. When this permanent magnet is used, the surfaces of the permanent magnets 290a, 290b, and 290c facing the reaction tube side must be N poles, and the surface facing the heater side must be S poles. Further, it is necessary to provide the permanent magnets 291a, 291b, and 291c so that the surfaces facing the reaction tube side are S poles and the surfaces facing the heater side are N poles.

In the present embodiment, the magnetic coil is exemplified as the magnetic field generating device that generates the magnetic field, but an electromagnet different from the magnetic coil may be provided.

Furthermore, as shown in FIG. 12, by providing cooling devices 284 and 285 for supplying a refrigerant such as an inert gas around the magnetic coils 280 and 281 as the magnetic field generating device, current is supplied to the magnetic coils 280 and 281. You may comprise so that the heat which arises by doing may be cooled. With this configuration, heat is generated in the magnetic coils 280 and 281 by continuously supplying current to the magnetic coils 280 and 281 and heat generated when a large current supply is required to stabilize the magnetic field in a short time. Thus, it is possible to suppress the heat generated for these reasons from affecting each film forming step. At this time, what is used as a cooling medium may be an inert gas such as N ₂ gas or a cooling gas such as air, or a cooling pipe to which a cooling liquid is supplied. Also good. The cooling devices 284 and 285 may be provided between the reaction tube and the magnetic field generation device, or may be provided so as to correspond to the magnetic coils 280 and 281 that are the magnetic field generation devices. Alternatively, the cooling devices 284 and 285 may be configured as a single unit so that both the magnetic coils 280 and 281 are cooled.

(Control device)
As shown in FIG. 5, the controller 121 which is a control unit (control device) includes MFCs 241a, 241b, 241c, 241d, 241e, 241f, valves 243a, 243b, 243c, 243d, 243e, 243f, pressure sensors 245, and APC valves. 244, a vacuum pump 246, a heater 207, a temperature sensor 263, a boat rotation mechanism 267, a boat elevator 115, a high frequency power supply 273, a matching unit 272, and the like. Based on the controller 121, various gas flow rate adjustment operations by the MFCs 241 a, 241 b, 241 c, 241 d, 241 e, and 241 f, the opening and closing operations of the valves 243 a, 243 b, 243 c, 243 d, 243 e, 243 f, the opening and closing of the APC valve 244, and the pressure sensor 245. Control of pressure adjustment operation, temperature adjustment operation of the heater 207 based on the temperature sensor 263, start / stop of the vacuum pump 246, rotation speed adjustment operation of the boat rotation mechanism 267, raising / lowering operation of the boat 217 by the boat elevator 115, etc., high frequency power supply The power supply control of 273, the impedance control by the matching unit 272, and the power supply control of the variable DC power sources 282 and 283 are performed.

The controller 121 is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e. For example, an input / output device 122 configured as a touch panel or the like is connected to the controller 121.

The storage device 121c includes, for example, a flash memory, an HDD (Hard Disk Drive), and the like. In the storage device 121c, a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of substrate processing such as thin film formation described later, and the like are stored in a readable manner. The process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 121 to execute each procedure in a substrate processing process such as a thin film forming process to be described later. Hereinafter, the process recipe, the control program, and the like are collectively referred to simply as a program. When the term “program” is used in this specification, it may include only a process recipe alone, may include only a control program alone, or may include both. The RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.

The I / O port 121d includes the above-described MFCs 241a to 241f, valves 243a to 243f, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, matching device 272, high frequency power supply 273, rotation mechanism 267, boat It is connected to the elevator 115, variable DC power sources 282, 283, and the like.

The CPU 121a is configured to read out and execute a control program from the storage device 121c, and to read out a process recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like. Then, the CPU 121a adjusts the flow rate of various gases by the MFCs 241a to 241f, the opening / closing operation of the valves 243a to 243f, the opening / closing operation of the APC valve 244, and the APC valve 244 based on the pressure sensor 245 in accordance with the contents of the read process recipe. Pressure adjustment operation by means of, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment operation of the boat 217 by the rotation mechanism 267, the raising and lowering operation of the boat 217 by the boat elevator 115, and the alignment The controller 272 is configured to control the impedance adjustment operation, power supply of the high frequency power supply 273, power supply of the variable DC power supplies 282 and 283, and the like.

The controller 121 is connected to an external storage device 123 (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card). The stored program can be configured by installing it in a computer. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. When the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both. The program may be provided to the computer using a communication means such as the Internet or a dedicated line without using the external storage device 123.

(Peripheral configuration)
A temperature sensor 263 as a temperature detector is installed in the reaction tube 203, and the temperature in the processing chamber 201 is adjusted by adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263. It is configured to have a desired temperature distribution. Similar to the first nozzle 233 a and the second nozzle 233 b, the temperature sensor 263 is configured in an L shape and is provided along the inner wall of the reaction tube 203.

(2) Substrate Processing Step Next, using a processing furnace of the above-described substrate processing apparatus, a silicon nitride oxide film (SiON) as an insulating film is formed on the substrate as one step of the semiconductor device (device) manufacturing process. An example of how to do this will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.

As shown in FIGS. 6 and 7, in the processing sequence of the present embodiment, a nitride film forming step for forming a silicon nitride film (SiN) on the surface of the wafer 200, and the wafer 200 on which the SiN film is formed are oxidized. An oxidation process for forming a SiON film by processing is continuously performed. Thereby, for example, a gate insulating film of a MOS field effect transistor is formed.

In this specification, when the term “wafer” is used, it means “wafer itself” or “a laminate (aggregate) of a wafer and a predetermined layer or film formed on the surface”. In other words, it may be called a wafer including a predetermined layer or film formed on the surface. In addition, when the term “wafer surface” is used in this specification, it means “the surface of the wafer itself (exposed surface)” or “the surface of a predetermined layer or film formed on the wafer”. That is, it may mean “the outermost surface of the wafer as a laminated body”.

Therefore, in the present specification, the phrase “supplying a predetermined gas to the wafer” means “supplying a predetermined gas to the surface (exposed surface) of the wafer itself”, It may mean that “a predetermined gas is supplied to a layer, a film, or the like formed on the wafer, that is, to the outermost surface of the wafer as a laminated body”. Further, in this specification, when “describe a predetermined layer (or film) on the wafer” is described, “determine a predetermined layer (or film) on the surface (exposed surface) of the wafer itself”. , Or "to form a predetermined layer (or film) on the layer or film formed on the wafer, that is, on the outermost surface of the wafer as a laminate" There is.

In this specification, the term “substrate” is also synonymous with the term “wafer”.

(Import process (S501))
First, a plurality of wafers 200 are loaded into the boat 217 (wafer charge). Next, the boat elevator 115 is driven based on the control of the controller 121 to raise the boat 217. As a result, as shown in FIGS. 1 and 2, the boat 217 holding a plurality of wafers 200 is loaded into the processing chamber 201 (boat loading). At this time, the seal cap 219 closes the lower end of the reaction tube 203 via the O-ring 220. Thereby, the processing chamber 201 is hermetically sealed.

Further, when the boat 217 is carried in, Ar gas as a purge gas is caused to flow into the processing chamber 201 via the first purge gas supply system. Specifically, while adjusting the flow rate by the MFC 241d, the valve 243d is opened, and Ar gas is introduced into the processing chamber 201. Thereby, effects such as suppression of particle intrusion into the processing chamber 201 when the boat 217 is conveyed can be obtained. At this time, in the second purge gas supply system and the third purge gas supply system, which are other purge gas supply systems, the valves 243e and 243f are opened while the flow rate is adjusted by the MFCs 241e and 241f in the same manner as in the first purge gas supply system. And Ar gas may be controlled to be introduced into the processing chamber 201.

(Pressure adjustment step and temperature raising step (S502))
When the loading of the boat 217 into the processing chamber 201 is completed, the atmosphere in the processing chamber 201 is exhausted so that the inside of the processing chamber 201 becomes a predetermined pressure (for example, 10 to 100 Pa). More specifically, the valve opening degree of the APC valve 244 is feedback-controlled based on the pressure information detected by the pressure sensor while evacuating by the vacuum pump 246, and the inside of the processing chamber 201 is set to a predetermined pressure. Further, the inside of the processing chamber 201 is heated by the heater 207 so as to reach a predetermined temperature. Specifically, the degree of energization to the heater 207 is controlled based on the temperature information detected by the temperature sensor, and the inside of the processing chamber 201 is set to a predetermined temperature (for example, 300 to 600 ° C.). Then, the rotation mechanism 267 is operated to start the rotation of the wafer 200 loaded into the processing chamber 201. The rotation of the wafer 200 is continued until a nitride film formation step (S503) and an oxidation step (S504) described later are completed.

(Nitride film forming step (S503))
As shown in FIG. 6, in the nitride film forming step (S503), two or more kinds of processing gases are alternately supplied onto the wafer one by one under predetermined film forming conditions (temperature, time, etc.). A SiN film is formed on the surface of the wafer 200 using a DCS gas and NH ₃ gas by an alternating supply method, which is a method of forming a thin film in units of several atomic layers from less than one atomic layer using a reaction on 200. . Film thickness control in this alternate supply method can be performed by controlling the number of times of alternate supply of the processing gas.

In the nitride film forming step, first, DCS gas as a source gas is supplied from the first nozzle 233a into the processing chamber 201, and the surface of the wafer 200 contains silicon (Si) having a thickness of less than one atomic layer to several atomic layers. A layer is formed (source gas supply step (S503-1)). Thereafter, Ar gas is supplied into the processing chamber 201 as a purge gas, and the DCS gas that is the source gas is exhausted (source gas exhausting step (S503-2)). Thereafter, activated species (NH ₃ radicals) generated by plasma excitation of NH ₃ gas as the first reaction gas are supplied into the processing chamber 201 to form a SiN layer on the wafer 200 (first reaction gas supply). Step (S503-3)). Thereafter, Ar gas is supplied as a purge gas into the processing chamber 201, and NH ₃ gas as the first reaction gas is exhausted (first reaction gas exhausting step (S503-4)). The SiN film having a desired thickness is obtained by performing this cycle a predetermined number of times, with the source gas supply step, the source gas exhaust step, the first reaction gas supply step, and the first reaction gas exhaust step as one cycle. Form.

In this specification, this film forming sequence may be indicated as follows for convenience. Note that the same notation is used in the description of the following modified examples and other embodiments.

(DCS → NH ₃ ) × n => SiN

Hereinafter, the nitride film forming step will be specifically described.

(Raw material gas supply process (S503-1))
First, a DCS gas is filled in a gas reservoir (not shown) provided in the first gas supply pipe 232a. Specifically, first, supply of DCS gas as a raw material gas into the gas reservoir is started while the valve 243a is closed and the MFC 241a adjusts to a predetermined flow rate. When a predetermined time (eg, 2 to 4 seconds) elapses and the pressure in the gas reservoir reaches a predetermined pressure (eg, 20000 Pa), high-pressure DCS gas is confined in the gas reservoir.

When the inside of the processing chamber 201 reaches a predetermined pressure (for example, 20 Pa) and the inside of the gas reservoir reaches a predetermined pressure (for example, 20000 Pa), the APC valve 244 is closed to temporarily stop the exhaust in the processing chamber 201. To do. Then, the valve 243a is opened, and the high-pressure DCS gas filled in the gas reservoir is supplied in a pulsed manner (flash supply) into the buffer chamber 237 (that is, inside the processing chamber 201). At this time, since the valve of the APC valve 244 is closed, the pressure in the processing chamber 201 rapidly increases to, for example, 931 Pa (7 Torr). The DCS gas supplied into the processing chamber 201 generates a silicon (Si) -containing layer having a thickness of less than one atomic layer to several atomic layers as a first layer on the outermost surface of the wafer 200. DCS gas that has not contributed to the generation of the Si-containing layer flows down in the processing chamber 201 and is exhausted from the exhaust pipe 231.

(Raw material gas exhaust process (S503-2))
When a predetermined time (for example, 2 to 4 seconds) elapses, the valve 243a is closed, and the supply of DCS gas into the buffer chamber 237 (that is, the processing chamber 201) is stopped. At this time, the APC valve 244 is kept open, and the DCS gas remaining in the processing chamber 201 or contributing to the formation of the first layer is discharged from the processing chamber 201 by the vacuum pump 246. At this time, after the valve 243a is closed, the valve 243d is opened, and Ar gas is supplied into the processing chamber 201 as a purge gas, thereby discharging DCS gas and reaction byproducts remaining in the processing chamber 201. Can enhance the effect.

At this time, the gas remaining in the processing chamber 201 may not be completely discharged, and the processing chamber 201 may not be completely purged. If the amount of gas remaining in the processing chamber 201 is very small, no adverse effect will occur in the first reaction gas supply step performed thereafter. The flow rate of Ar gas supplied into the processing chamber 201 does not need to be a large flow rate. For example, the first reaction is performed by supplying an amount of Ar gas equivalent to the volume of the reaction tube 203 (processing chamber 201). Purge can be performed to such an extent that no adverse effect occurs in the gas supply process. Thus, by not completely purging the inside of the processing chamber 201, the purge time can be shortened and the throughput can be improved. It is possible to minimize the consumption of Ar gas.

(First reactive gas supply step (S503-3))
When the source gas exhaust process is completed, Ar gas as an excitation gas is supplied into the buffer chamber 237. Specifically, the flow rate is adjusted by the MFC 241 e, the valve 243 e is opened, and Ar gas is supplied into the buffer chamber 237. Then, by supplying high-frequency power from the high-frequency power source 273 to the first rod-shaped electrode 269 and the second rod-shaped electrode 270, Ar gas plasma is generated in the plasma generation region 224 in the buffer chamber 237, and Ar is activated. .

Next, NH ₃ gas is supplied into the buffer chamber 237 as a first reaction gas. Specifically, the valve 232b is opened while the NH ₃ gas is supplied into the buffer chamber 237 while adjusting the flow rate within the range of 1 to 10 slm by MFC. The NH ₃ gas supplied into the buffer chamber 237 collides with activated Ar (Ar radical) and is indirectly activated (indirect excitation). Note that NH ₃ gas may be directly activated (directly excited) in the same manner as O ₂ gas described later.
The activated NH ₃ (NH ₃ radical) is ejected together with Ar radicals from the gas supply port 248 c toward the wafer 200 and supplied into the processing chamber 201. At this time, as shown in FIG. 7, a variable DC power source (not shown) is supplied to the magnetic coil 280 or 281 as the magnetic field generation device or both of the magnetic coils 280 and 281 by the control unit 121 during the process of supplying the raw material gas. (Magnetic field source) 282 or 283 or both of the variable DC power sources 282 and 283 are controlled so that electric power (current) is supplied, and the magnetic field generation device is in an ON state, that is, a state in which a magnetic field is generated. Yes. Therefore, when the NH ₃ radical is generated, a magnetic field is already generated, and the NH ₃ radical moves toward the direction of the generated magnetic field, that is, the direction of the magnetic force line 402 and reaches the surface of the wafer 200. Become.

Here, the magnetic field generation device requires a certain time from when a current is supplied to the magnetic coils 280 and 281 by the variable DC power source until the magnetic field is generated and stabilized. For this reason, as shown in FIG. 7, it is possible to always generate a stable magnetic field by always operating the magnetic field generating device during the nitride film forming step (S503) which is a film forming step. Preferably, electric power is supplied from the variable DC power supply 282 or 283 or both of the variable DC power supplies 282 and 283 before the first reaction gas supply step, and the magnetic field generator is in an ON state, that is, The magnetic field is preferably controlled so as to be generated. More preferably, in order to generate a stable magnetic field immediately after the magnetic field generating device is turned on, the current supplied to the magnetic coils 280 and 281 is larger than the current supplied to generate the magnetic field in advance. It is preferable to do so. By controlling in this way, it is possible to control the magnetic field generator to be turned on at the same timing as the plasma generator is turned on. Furthermore, since it becomes possible to control in this way, it becomes possible to control so that operation | movement of a plasma production | generation apparatus and a magnetic field production | generation apparatus may interlock | cooperate, and a power saving can be achieved.

The NH ₃ radicals supplied into the processing chamber 201 react with at least a part of the first layer, that is, the Si-containing layer formed on the surface of the wafer 200 in the source gas supply process. Thereby, the first layer is plasma-nitrided and changed (modified) into a second layer containing Si and N, that is, a silicon nitride layer (SiN layer), and a SiN film is formed. At this time, NH ₃ gas and Ar gas that have not contributed to the deposition on the surface of the wafer 200 flow down in the processing chamber 201 and are exhausted from the gas exhaust pipe 231. Thus, the Ar gas functions as an excitation gas that indirectly activates NH ₃ and also functions as a carrier gas that promotes the supply of NH ₃ radicals into the processing chamber 201.

(First reactive gas exhausting step (S503-4))
When a predetermined time (for example, 2 to 120 seconds) elapses, the supply of high-frequency power from the high-frequency power source 273 to the first rod-shaped electrode 269 and the second rod-shaped electrode 270 is stopped. Further, the valve 232b is closed, and the supply of NH ₃ gas into the buffer chamber 237 is stopped. Then, NH ₃ gas and reaction by-products remaining in the processing chamber 201 or contributed to the formation of the second layer are exhausted from the processing chamber 201 by the same processing procedure as the source gas exhaust process. . At this time, the gas remaining in the processing chamber 201 does not need to be completely exhausted, as in the raw material gas exhaust process.

(Performed times)
Thereafter, a source gas supply step (S503-1), a source gas exhaust step (S503-2), a first reaction gas supply step (S503-3), and a first reaction gas exhaust step (S503-4) Are performed a predetermined number of times to form a SiN film having a desired film thickness. For example, the thickness of the SiN layer formed when the above cycle is performed once is made smaller than the desired thickness, and the thickness of the SiN film formed by stacking the SiN layers becomes the desired thickness. It is preferable to repeat the above-described cycle a plurality of times until it becomes.

As processing conditions when performing the nitride film forming step, for example,
Processing temperature (wafer temperature): 200 to 600 ° C.
Processing pressure (pressure in the processing chamber): 10 to 100 Pa,
Magnetic field strength: 100-1000G (= 0.01-0.1T)
DCS gas supply flow rate: 1 to 2000 sccm,
NH ₃ gas supply flow rate: 100-10000 sccm,
Ar gas supply flow rate: 100 to 10,000 sccm,
Is exemplified. By setting each processing condition to a certain value within each range, the film forming process can be appropriately advanced.

(Oxidation step (S504))
After the SiN film having a desired thickness is formed by the nitride film forming step, the SiN film is oxidized by supplying active species (O ₂ radicals) of oxygen gas activated by plasma onto the wafer 200, An oxidation step (S504) for forming a silicon oxynitride (SiON) film is performed.

First, O ₂ gas is supplied into the buffer chamber 237 as the second reactive gas. Specifically, the flow rate is adjusted by the MFC 241 c, the valve 243 c is opened, and O ₂ gas is supplied into the buffer chamber 237. Then, by supplying high-frequency power from the high-frequency power source 273 to the first rod-shaped electrode 269 and the second rod-shaped electrode 270, O ₂ gas plasma is generated in the buffer chamber 237, and the O ₂ gas is directly activated. (Direct excitation). In addition, like NH ₃ gas, O ₂ gas may be indirectly activated (indirect excitation).
The activated O ₂ (O ₂ radical) is ejected together with Ar gas from the gas supply port 248 c of the buffer chamber 237 toward the wafer 200 and is supplied into the processing chamber 12. Note that the supply of O ₂ radicals into the processing chamber 201 is performed by adjusting the flow rate with the MFC 241f, opening the valve 243f, and supplying Ar gas as a carrier gas into the buffer chamber 237 (that is, inside the processing chamber 201). Can be promoted. At this time, the timing of magnetic field generation by the magnetic field generation device is the same as that in the above-described nitride film formation step, and at the timing when the O ₂ gas is activated and supplied into the processing chamber 201, the magnetic field generation device is in the ON state. That is, the magnetic field is generated. Therefore, when the O ₂ radical is generated, a magnetic field is already generated, and the O ₂ radical moves toward the direction of the generated magnetic field, that is, the direction of the magnetic force line 402 and reaches the surface of the wafer 200. Become. As in the nitride film formation step, the magnetic field generation device may be controlled to be always ON during the oxidation step), or the magnetic field generation device is turned ON when the plasma generation device is turned ON. You may control as follows. Furthermore, it is possible to control so that the magnetic field generation device is always turned on from the start of the nitride film formation process to the completion of the oxidation process.

The O ₂ radical supplied into the processing chamber 201 reacts with at least a part of the SiN film. Thereby, the SiN film is plasma oxidized and changed (modified) into a film containing Si, O, and N, that is, a SiON film. As a result, a SiON film is formed on the wafer 200. When a predetermined time (for example, 2 to 120 seconds) elapses, the supply of high-frequency power from the high-frequency power source 273 to the first rod-shaped electrode 269 and the second rod-shaped electrode 270 is stopped. Further, the valve 232c is closed, and the supply of O ₂ gas into the buffer chamber 237 is stopped. Then, O ₂ gas and reaction by-products remaining in the processing chamber 201 or contributed to the formation of the SiON film are discharged from the processing chamber 201 by the same processing procedure as the source gas exhaust process. At this time, the point that it is not necessary to completely discharge the gas remaining in the processing chamber 201 and that the Ar gas may be supplied as the purge gas into the processing chamber is the same as in the raw material gas exhausting step.

The flow of the SiON film formed by the above-described nitride film formation process and oxidation process is expressed as the following sequence.

(DCS → NH ₃ ) × n → O ₂ ⇒ SiON

As processing conditions when performing the oxidation step, for example,
Processing temperature (wafer temperature): 200 to 600 ° C.
Processing pressure (pressure in the processing chamber): 10 to 100 Pa,
Magnetic field strength: 100-1000G (= 0.01-0.1T)
O ₂ gas supply flow rate: 100 to 10,000 sccm,
Ar gas supply flow rate: 100 to 10,000 sccm,

(Atmospheric pressure return step and temperature drop step (S505))
When the oxidation step (S504) is completed, the rotation of the boat 217 is stopped and the rotation of the wafer 200 is stopped. Then, the temperature of the wafer 200 is lowered while returning the pressure in the processing chamber 201 to atmospheric pressure. Specifically, the valve opening of the APC valve 244 is feedback-controlled based on the pressure information detected by the pressure sensor while supplying the Ar gas into the processing chamber 201 with the valve 243e kept open, and the processing chamber 201 The internal pressure is increased to atmospheric pressure. Then, the energization amount to the heater 207 is controlled to lower the temperature of the wafer 200.

(Unloading step (S506))
Thereafter, the wafer 200 that has been subjected to the substrate processing in the reverse order of the above-described loading process is unloaded from the processing chamber 201, and the substrate processing process according to this embodiment is completed.

(3) Effects According to the Embodiment According to the present invention, one or more effects shown below can be obtained.

(A) By generating a magnetic field in the processing chamber 201 by the magnetic field generation device, it is possible to increase the amount of movement of plasma in the direction of the magnetic field, and on the surface of the substrate 200 carried into the processing chamber 201. Inactivation before plasma reaches can be suppressed.

(B) Since the plasma is supplied on the surface of the processing substrate 200 with high efficiency without being deactivated, a predetermined film can be formed uniformly, and the film can be formed with a uniform film thickness. It is also possible to obtain uniform film quality, which is a characteristic of the film.

(C) By installing the magnetic field generator so as to cover the buffer chamber 237, it is possible to efficiently affect the plasma in the buffer chamber 237, and efficiently supply the activated plasma on the surface of the substrate 200. It becomes possible to do.

(D) By generating the direction of the magnetic field from the gas supply port of the buffer chamber 237 toward the substrate 200 and providing directivity in the direction of plasma movement, the generated plasma collides with an unnecessary portion and is lost. It is possible to suppress the possibility of being activated, and it is possible to efficiently supply plasma onto the surface of the substrate 200.

(E) Since the present invention can be implemented only by adding a magnetic field generator without greatly changing the configuration of a conventional substrate processing apparatus, the apparatus can be changed at low cost and a stable magnetic field can be generated. Is possible.

(F) When the magnetic field generation device is provided outside the heater, since the magnetic field generation device is disposed outside the heating source, the thermal influence on the magnetic field generation device can be minimized.

(4) Modified Example The nitride film forming step of the substrate processing step in the present embodiment is not limited to the above-described aspect, and can be changed as in the following modified example.

(Modification 1)
For example, as shown in FIG. 8, the order and length of supply of the source gas, the first reaction gas, and the inert gas are not changed, and the magnetic field generation unit is earlier than the high-frequency power source for plasma generation is turned on. The variable DC power supply connected to is turned ON, and the variable DC power supply is turned OFF at a later timing than the high frequency power supply for plasma generation is turned OFF.
By controlling in this way, it is possible to generate a magnetic field only when supplying a gas that requires a magnetic field. Furthermore, the power is turned on earlier than the plasma generator, and the power is turned off later. Thus, it is possible to obtain an effect that plasma can be stably supplied to the substrate surface.

(Modification 2)
Further, for example, as shown in FIG. 9, after supplying the first reaction gas, O ₂ gas that is the second reaction gas is supplied, and the nitride film formation step and the oxidation step may be combined into one cycle. . That is, first, DCS, which is a raw material gas, is supplied to the processing chamber, and then NH ₃ gas, which is the first reaction gas, is activated and supplied to the processing chamber, and then oxygen (O 2), which is the second reaction gas. ₂ ) The process of supplying gas to the process chamber may be repeated as a cycle until a predetermined film thickness is obtained. That is, the following sequence may be used.

(DCS → NH ₃ → O ₂ ) × n ⇒ SiON

By controlling in this way, it becomes possible to stack the SiON film more uniformly than in the first embodiment in which the surface of the SiN film is oxidized to form the SiON film, and an intermediate between the SiN film and the SiO ₂ film. Since it has physical property values and electrical characteristics, it is possible to obtain an effect that wet etching resistance and dry etching resistance can be further improved as compared with the SiON film formed in the first embodiment.

As mentioned above, although this invention has been demonstrated along embodiment, the above-mentioned embodiment, each modification, etc. are not limited to the above-mentioned content, It uses combining suitably in the range which does not deviate from the summary. And the effect can be obtained.
For example, in this embodiment, a buffer chamber for generating plasma is provided inside the reaction tube, and a first rod-shaped electrode 269 that is a first electrode as a plasma generating device and a second electrode that is a second electrode are provided inside the buffer chamber. However, the present invention is not limited to this, and the buffer chamber 237 is provided on the side wall in the reaction tube so as to protrude toward the heater 207 and only the gas supply nozzle is provided in the buffer chamber. The first electrode and the second electrode, which are plasma generation units, may be provided outside the reaction tube so as to sandwich the buffer chamber from the outside.

In addition, for example, in the above-described embodiment and each modification, an example in which DCS is used as the source gas has been described. However, the present invention is not limited to such an embodiment. For example, as the source gas, in addition to DCS, hexachlorodisilane (Si ₂ Cl ₆ , abbreviation: HCDS) gas, monochlorosilane (SiH ₃ Cl, abbreviation: MCS) gas, dichlorosilane (SiH ₂ Cl ₂ , abbreviation: DCS) Inorganic halosilanes such as gas, trichlorosilane (SiHCl ₃ , abbreviation: TCS) gas, tetrachlorosilane, that is, silicon tetrachloride (SiCl ₄ , abbreviation: STC) gas, octachlorotrisilane (Si ₃ Cl ₈ , abbreviation: OCTS) gas, etc. Source gas, trisdimethylaminosilane (Si [N (CH ₃ ) ₂ ] ₃ H, abbreviation: 3DMAS) gas, tetrakisdimethylaminosilane (Si [N (CH ₃ ) ₂ ] ₄ , abbreviation: 4DMAS) gas, bisdiethylaminosilane _{(Si [N (C 2 H} 5) 2] 2 _2, abbreviation: BDEAS) Gas, Bicester fischeri butylamino silane _{(SiH 2 [NH (C 4} H 9)] 2, abbreviated: BTBAS) halogen-free amino based such as a gas (amine) using a silane raw material gas Can do. The source gas contains no halogen group such as monosilane (SiH ₄ , abbreviation: MS) gas, disilane (Si ₂ H ₆ , abbreviation: DS) gas, trisilane (Si ₃ H ₈ , abbreviation: TS) gas, etc. An inorganic silane source gas can be used.

For example, in the above-described embodiment, an example in which NH ₃ gas is used as the first reaction gas has been described. However, the present invention is not limited to such an embodiment. For example, as the first reaction gas, in addition to NH ₃ gas, hydrogen nitride-based gas such as diazene (N ₂ H ₂ ) gas, hydrazine (N ₂ H ₄ ) gas, and N ₃ H ₈ gas, and these compounds The gas etc. which contain can be used. As the first reaction gas, triethylamine ((C ₂ H ₅ ) ₃ N, abbreviation: TEA) gas, diethylamine ((C ₂ H ₅ ) ₂ NH, abbreviation: DEA) gas, monoethylamine (C ₂ H) ₅ NH ₂ , abbreviation: MEA) gas such as ethylamine gas, trimethylamine ((CH ₃ ) ₃ N, abbreviation: TMA) gas, dimethylamine ((CH ₃ ) ₂ NH, abbreviation: DMA) gas, monomethylamine ( A methylamine gas such as CH ₃ NH ₂ (abbreviation: MMA) gas or the like can be used. As the first reaction gas, an organic hydrazine-based gas such as trimethylhydrazine ((CH ₃ ) ₂ N ₂ (CH ₃ ) H, abbreviation: TMH) gas, or the like can be used.

For example, in the above-described embodiment, an example in which O ₂ gas is used as the second reaction gas has been described. However, the present invention is not limited to such an embodiment. For example, as the second reaction gas, in addition to O ₂ gas, nitrous oxide (N ₂ O) gas, nitrogen monoxide (NO) gas, nitrogen dioxide (NO ₂ ) gas, ozone (O ₃ ) gas, hydrogen (H ₂ ) gas + O ₂ gas, H ₂ gas + O ₃ gas, water vapor (H ₂ O), carbon monoxide (CO) gas, carbon dioxide (CO ₂ ) gas, or the like can be used.

Also, for example, in the above-described embodiment, an example in which a SiN film is formed using DCS as a source gas and a nitrogen (N) -containing gas (nitriding gas) such as NH ₃ gas as a first reaction gas, and An example in which an SiON film is formed using an oxygen (O) -containing gas (oxidizing gas) such as oxygen (O ₂ ) gas after the formation of the SiN film has been described. However, the present invention is not limited to such an embodiment. For example, in addition to these gases, or in addition to these gases, carbon (C) -containing gas such as propylene (C ₃ H ₆ ) gas, boron (B) -containing gas such as boron trichloride (BCl ₃ ) gas, etc. For example, a SiO film, a SiON film, a SiOCN film, a SiOC film, a SiCN film, a SiBN film, a SiBCN film, or the like can be formed by the following film forming sequence. In addition, the order which flows each gas can be changed suitably. Even in the case where these films are formed, the film formation can be performed under the same processing conditions as in the above-described embodiment, and the same effect as in the above-described embodiment can be obtained.

(3DMAS → O ₃ ) × n => SiO

(HCDS → NH ₃ → O ₂ ) × n ⇒ SiON

(HCDS → C ₃ H ₆ → O ₂ → NH ₃ ) × n ⇒ SiOCN

(HCDS → TEA → O ₂ ) × n ⇒ SiOC

(HCDS → C ₃ H ₆ → NH ₃ ) × n ⇒ SiCN

(HCDS → BCl ₃ → NH ₃ ) × n ⇒ SiBN

(HCDS → C ₃ H ₆ → BCl ₃ → NH ₃ ) × n ⇒ SiBCN

For example, in the above-described embodiment, the example in which the silicon-based insulating film such as the SiN film is formed has been described. However, the present invention is not limited to such an embodiment. For example, in the present invention, titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W) is formed on the wafer 200. Even when a film containing a metal element such as a metal film is formed, the present invention can be suitably applied.

For example, the present invention provides a TiN film, a TiO film, a TiON film, a TiOCN film, a TiOC film, a TiCN film, a TiBN film, a TiBCN film, a ZrN film, a ZrO film, a ZrON film, a ZrOC film, a ZrOC film, ZrCN film, ZrBN film, ZrBCN film, HfN film, HfO film, HfON film, HfOCN film, HfOC film, HfCN film, HfBN film, HfBCN film, TaN film, TaO film, TaON film, TaOCN film, TaOC film, TaCN film , TaBN film, TaBCN film, NbN film, NbO film, NbON film, NbOCN film, NbOC film, NbCN film, NbBN film, NbBCN film, AlN film, AlO film, AlON film, AlOCN film, AlOC film, AlCN film, AlBN Film, AlBCN film, MoN film, MoO film, MoON film, MoOCN film, MoO It can be suitably applied to the formation of films, MoCN films, MoBN films, MoBCN films, WN films, WO films, WON films, WOCN films, WOC films, WCN films, WBN films, WBCN films, etc. Become. In addition to these, the present invention is also suitably applied to the case where a film doped (added) with any of these elements, such as a TiAlN film, a TaAlN film, a TiAlC film, a TaAlC film, or a TiSiN film is formed. Is possible.

When forming a metal film, for example, titanium tetrachloride (TiCl ₄ ) gas, titanium tetrafluoride (TiF ₄ ) gas, zirconium tetrachloride (ZrCl ₄ ) gas, zirconium tetrafluoride (ZrF ₄ ) are used as source gases. Gas, hafnium tetrachloride (HfCl ₄ ) gas, hafnium tetrafluoride (HfF ₄ ) gas, tantalum pentachloride (TaCl ₅ ) gas, tantalum pentafluoride (TaF ₅ ) gas, niobium pentachloride (NbCl ₅ ) gas, niobium pentafluoride (NbF ₅₎ gas, aluminum trichloride (AlCl ₃₎ gas, aluminum trifluoride (AlF ₃₎ gas, molybdenum pentachloride (MoCl ₅₎ gas, Mo It can be used Bed Den pentafluoride (MoF ₅₎ Gas, tungsten hexachloride (WCl ₆₎ gas, a tungsten hexafluoride (WF ₆₎ inorganic metal source gas containing a metal element and a halogen element such as a gas. As the source gas, for example, an organic metal source gas containing carbon and a metal element such as trimethylaluminum (Al (CH ₃ ) ₃ , abbreviation: TMA) gas can be used. As the first reaction gas and the second reaction gas, the same gas as that of the above-described embodiment can be used.

For example, a TiN film, a TiO film, a TiON film, a TiCN film, a TiAlC film, a TiAlN film, a TiSiN film, or the like can be formed on the wafer 200 by a film formation sequence described below.

(TiCl ₄ → NH ₃ ) × n ⇒ TiN

(TiCl ₄ → O ₂ ) × n ⇒ TiO

(TiCl ₄ → NH ₃ → O ₂ ) × n ⇒ TiON

(TiCl ₄ → C ₃ H ₆ → NH ₃ ) × n ⇒ TiCN

(TiCl ₄ → TMA) × n ⇒ TiAlC

(TiCl ₄ → TMA → NH ₃ ) × n ⇒ TiAlN

(TiCl ₄ → HCDS → NH ₃ ) × n ⇒ TiSiN

In addition, the order in which each gas flows can be changed as appropriate. Even in the case where these films are formed, the film formation can be performed under the same processing conditions as in the above-described embodiment, and the same effect as in the above-described embodiment can be obtained.

That is, the present invention can be suitably applied when forming a film containing a predetermined element such as a semiconductor element or a metal element.

As described above, the present invention can provide a technique capable of obtaining a uniform film thickness in substrate processing using plasma.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
According to one aspect of the invention,
A reaction tube forming a processing chamber for processing a substrate;
A gas supply unit which is provided in the processing chamber and supplies a source gas and a reaction gas which form a predetermined film on the surface of the substrate into the processing chamber;
A plasma generating apparatus for exciting the reaction gas supplied from the gas supply unit;
A magnetic field generation device that is provided outside the plasma generation device and generates a magnetic field in the same direction as a supply direction of the reaction gas excited by the plasma generation device;
A substrate processing apparatus is provided.

(Appendix 2)
The substrate processing apparatus according to appendix 1, wherein the magnetic field is generated by the magnetic field generation apparatus in a direction parallel to the substrate surface.

(Appendix 3)
The substrate processing apparatus according to Supplementary Note 1 or 2, wherein the magnetic field generation device is installed to face each other so as to sandwich the reaction tube.

(Appendix 4)
The substrate processing apparatus according to any one of supplementary notes 1 to 3, wherein the magnetic field is generated so as to cover the plasma generation apparatus.

(Appendix 5)
The substrate processing apparatus according to any one of appendices 1 to 4, wherein the magnetic field generated by the magnetic field generation apparatus is generated in a direction from the reaction tube toward the substrate.

(Appendix 6)
The substrate processing apparatus further includes a heating device that heats the processing chamber outside the reaction tube,
6. The substrate processing apparatus according to any one of appendices 1 to 5, wherein the magnetic field generation device is provided between the reaction tube and the heating device.

(Appendix 7)
The magnetic field generation device according to any one of supplementary notes 1 to 6, further comprising: an electromagnetic coil that generates a magnetic field therein; and a power source that is connected to the electromagnetic coil and supplies a current of a predetermined strength to the electromagnetic coil. The described substrate processing apparatus is provided.

(Appendix 8)
The substrate processing apparatus according to any one of appendices 1 to 6, wherein the magnetic field generation device is a permanent magnet.

(Appendix 9)
The substrate processing apparatus according to any one of appendices 1 to 8, wherein a cooling device for cooling heat generated by the magnetic field generation unit generating a magnetic field is provided around the magnetic field generation unit. Provided.

(Appendix 10)
The reaction tube further includes a buffer chamber in which the plasma generation device is disposed,
The substrate processing apparatus according to any one of appendices 1 to 9, wherein the magnetic field is generated in a direction penetrating the buffer chamber.

(Appendix 11)
The buffer chamber further includes a plasma supply port for supplying the excited reaction gas,
The substrate processing apparatus according to appendix 10, wherein the plasma supply port, the central portion of the substrate, and the magnetic field generation device are installed in the same straight line.

(Appendix 12)
The substrate processing apparatus further includes a controller that controls the plasma generation apparatus and the magnetic field generation apparatus so that the magnetic field generation apparatus operates to include at least a timing at which the plasma generation apparatus operates. To the substrate processing apparatus according to any one of 11 to 11.

(Appendix 13)
According to another aspect of the invention,
A reaction gas supply step of generating a plasma of the reaction gas by exciting the reaction gas supplied to the substrate conveyed into the processing chamber;
A source gas supply step for supplying source gas to the substrate;
A magnetic field generation step of generating a magnetic field in the same direction as the supply direction of the excited reaction gas;
A method for manufacturing a semiconductor device or a substrate processing method is provided.

(Appendix 14)
The method according to attachment 13, wherein at least the plasma generation device and the magnetic field generation device are controlled to operate in conjunction with each other.

(Appendix 15)
According to another aspect of the invention,
A reaction gas supply procedure for generating a plasma of the reaction gas by exciting the reaction gas supplied to the substrate conveyed into the processing chamber;
A source gas supply procedure for supplying source gas to the substrate;
A magnetic field generation procedure for generating a magnetic field in the same direction as the supply direction of the excited reaction gas;
Or a computer-readable recording medium on which the program is recorded is provided.

121... Controller (control unit),
200: Wafer (substrate),
201 ... processing chamber,
202 ... Processing furnace,
203 ... reaction tube,
207 ... heater,
231 ... exhaust pipe,
233a, 233b ... nozzles,
232a, 232b, 232c, 232d, 232e, 232f ... gas supply pipes,
237: Buffer room,
269 ... first rod-shaped electrode,
270 ... second rod-shaped electrode,
272: Matching device,
273 ... high frequency power supply,
275 ... Electrode protective tube,
280, 281 ... Magnetic coil,
280a, 280b, 281a, 281b ... Conductor wires 282, 283 ... Variable DC power supply

Claims (13)

1. A reaction tube forming a processing chamber for processing a substrate;
   A gas supply unit which is provided in the processing chamber and supplies a source gas and a reaction gas which form a predetermined film on the surface of the substrate into the processing chamber;
   A plasma generating apparatus for exciting the reaction gas supplied from the gas supply unit;
   A magnetic field generation device that is provided outside the plasma generation device and generates a magnetic field in the same direction as a supply direction of the reaction gas excited by the plasma generation device;
   A substrate processing apparatus.
2. The substrate processing apparatus according to claim 1, wherein the magnetic field is generated by the magnetic field generation device in a direction parallel to the substrate surface.
3. The substrate processing apparatus according to claim 1, wherein the magnetic field generation device is installed so as to face the reaction tube.
4. The substrate processing apparatus according to claim 1, wherein the magnetic field is generated so as to cover the plasma generation apparatus.
5. The substrate processing apparatus according to claim 1, wherein a cooling device for cooling heat generated by the magnetic field generation unit generating a magnetic field is provided around the magnetic field generation unit.
6. The reaction tube further includes a buffer chamber in which the plasma generation device is disposed,
   The substrate processing apparatus according to claim 1, wherein the magnetic field is generated in a direction penetrating the buffer chamber.
7. The buffer chamber further includes a plasma supply port for supplying the excited reaction gas,
   The substrate processing apparatus according to claim 6, wherein the plasma supply port, the central portion of the substrate, and the magnetic field generation device are installed so as to be aligned on the same straight line.
8. The substrate processing apparatus further includes a control unit that controls the plasma generation apparatus and the magnetic field generation apparatus so that the magnetic field generation apparatus operates to include at least a timing at which the plasma generation apparatus operates. 2. The substrate processing apparatus according to 1.
9. The substrate processing apparatus further includes a heating device for heating the inside of the reaction tube,
   The substrate processing apparatus according to claim 1, wherein the magnetic field generation device is provided outside the heating device.
10. A reaction gas supply step of generating a plasma of the reaction gas by exciting the reaction gas supplied to the substrate conveyed into the processing chamber;
    A source gas supply step for supplying source gas to the substrate;
    A magnetic field generation step of generating a magnetic field in the same direction as the supply direction of the excited reaction gas;
    A method for manufacturing a semiconductor device comprising:
11. The method of manufacturing a semiconductor device according to claim 10, wherein the magnetic field is generated in a direction parallel to the substrate surface.
12. The reaction gas supply step further includes a plasma generation step of generating plasma of the reaction gas by a plasma generation device that excites the reaction gas,
    The method of manufacturing a semiconductor device according to claim 10, wherein the magnetic field generation step is performed at a timing including the plasma generation step.
13. A reaction gas supply procedure for generating a plasma of the reaction gas by exciting the reaction gas supplied to the substrate conveyed into the processing chamber;
    A source gas supply procedure for supplying source gas to the substrate;
    A magnetic field generation procedure for generating a magnetic field in the same direction as the supply direction of the excited reaction gas;
    The computer-readable recording medium which recorded the program which makes a computer perform.

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