WO2016136240A1 - Nanonimprint liquid material, method for manufacturing nanoimprint liquid material, method for manufacturing cured product pattern, method for manufacturing optical component, and method for manufacturing circuit board - Google Patents
Nanonimprint liquid material, method for manufacturing nanoimprint liquid material, method for manufacturing cured product pattern, method for manufacturing optical component, and method for manufacturing circuit board Download PDFInfo
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- WO2016136240A1 WO2016136240A1 PCT/JP2016/000956 JP2016000956W WO2016136240A1 WO 2016136240 A1 WO2016136240 A1 WO 2016136240A1 JP 2016000956 W JP2016000956 W JP 2016000956W WO 2016136240 A1 WO2016136240 A1 WO 2016136240A1
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- liquid material
- manufacturing
- mold
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- pattern
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- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- WUKMCKCDYKBLBG-UHFFFAOYSA-N tris(4-methoxyphenyl)sulfanium Chemical compound C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 WUKMCKCDYKBLBG-UHFFFAOYSA-N 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- INRGAWUQFOBNKL-UHFFFAOYSA-N {4-[(Vinyloxy)methyl]cyclohexyl}methanol Chemical compound OCC1CCC(COC=C)CC1 INRGAWUQFOBNKL-UHFFFAOYSA-N 0.000 description 1
Images
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
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- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/005—Surface shaping of articles, e.g. embossing; Apparatus therefor characterised by the choice of material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00269—Fresnel lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
- B29D11/00769—Producing diffraction gratings
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L35/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least one other carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L35/02—Homopolymers or copolymers of esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09D133/08—Homopolymers or copolymers of acrylic acid esters
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0079—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the method of application or removal of the mask
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2033/00—Use of polymers of unsaturated acids or derivatives thereof as moulding material
- B29K2033/04—Polymers of esters
- B29K2033/08—Polymers of acrylic acid esters, e.g. PMA, i.e. polymethylacrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
Abstract
Description
In this embodiment, the pattern forming curable composition (composition (1)) is preferably a curable composition containing at least the following component (A) and component (B). However, the composition (1) is not limited to that described above as long as being a composition curable by light irradiation or heat application. For example, the composition (1) may contain a compound having intramolecular reactive functional groups functioning as the component (A) and the component (B).
Component (A): polymerizable component
Component (B): polymerization initiator
The component (A) is a polymerizable component. The polymerizable component in this embodiment is a component which reacts with polymerization factors (radicals, cations, or the like) generated from the polymerization initiator (component (B)) to form a polymer by a chain reaction (polymerization reaction). The polymerizable component is preferably a component which forms a cured product of a high molecular weight compound by this chain reaction.
The component (B) is a polymerization initiator. As the polymerization initiator according to this embodiment, for example, there may be mentioned a photopolymerization initiator which is a compound generating polymerization factors by light and a thermal polymerization initiator which is a compound generating polymerization factors by heat.
diphenyl(4-tert-butylphenyl)sulfonium n-octanesulfonate,
tris(4-methoxyphenyl)sulfonium perfluoro-n-butanesulfonate,
tris(4-methoxyphenyl)sulfonium trifluoromethanesulfonate,
tris(4-methoxyphenyl)sulfonium 2-trifluoromethylbenzenesulfonate, tris(4-methoxyphenyl)sulfonium pyrenesulfonate,
tris(4-methoxyphenyl)sulfonium n-dodecylbenzenesulfonate, tris(4-methoxyphenyl)sulfonium p-toluenesulfonate, tris(4-methoxyphenyl)sulfonium benzenesulfonate, tris(4-methoxyphenyl)sulfonium 10-camphorsulfonate, or tris(4-methoxyphenyl)sulfonium n-octanesulfonate. However, the onium salt compound is not limited to those mentioned above.
diphenyliodonium hexafluorophosphate,
diphenyliodonium hexafluoroborate,
triphenylsulfonium hexafluoroantimonate, triphenylsulfonium hexafluorophosphate, or triphenylsulfonium hexafluoroborate.
Besides the component (A) and the component (B), in accordance with various purposes, the composition (1) according to this embodiment may also contain at least one addition component (C) without degrading the advantage of the present invention. As the addition component (C) described above, for example, a sensitizer, a hydrogen donor, an internal addition type mold release agent, a surfactant, an antioxidant, a solvent, a polymer component, and a polymerization initiator other than the above component (B) may be mentioned.
When the composition (1) according to this embodiment is prepared, at least the component (A) and the component (B) are mixed and dissolved with each other under predetermined temperature conditions. In particular, this operation is performed in a temperature range of 0°C to 100°C. When the component (C) is contained, an operation similar to that described above is performed.
The viscosity of a mixture of the components of the composition (1) according to this embodiment other than the solvent at 23°C is preferably 1 to 100 mPa s. In addition, the viscosity described above is more preferably 1 to 50 mPa s and further preferably 1 to 20 mPa s.
The surface tension of the mixture of the components of the composition (1) according to this embodiment other than the solvent at 23°C is preferably 5 to 70 mN/m. In addition, the surface tension described above is more preferably 7 to 35 mN/m and further preferably 10 to 32 mN/m. In his case, since the surface tension is set to 5 mN/m or more, when the composition (1) is brought into contact with the mold, the time required to fill the composition (1) into the concave portions of the fine pattern of the mold cannot be long.
In this embodiment, a cured layer forming composition (composition (2)) is a composition containing the following component (D) and component (E). The composition (2) is preferably a curable composition further containing a component (B) besides the component (D) and the component (E) but is not limited thereto as long as being a composition forming a cured layer by stimulation such as light or heat. For example, after the composition (2) in which the component (D) is dissolved or dispersed in the component (E) is applied, when the component (E) is removed out of the composition (2) by heating or the like, a cured layer may also be formed. In addition, the composition (2) may contain a compound having intramolecular reactive functional groups functioning as the component (D) and the component (B).
Component (D): a polymerizable component and/or a polymer component
Component (E): a solvent
The component (D) is a polymerizable component and/or a polymer component. The polymer component according to this embodiment is a polymer which has a structure of repeating units each derived from at least one type of monomer and which has a molecular weight of 1,000 or more.
As is the composition (1), the composition (2) according to this embodiment may also contain a polymerization initiator as the component (B).
The component (E) is a solvent. The component (E) according to this embodiment is not particularly limited as long as being a solvent dissolving the component (D) or the component (D) and the component (B). As a preferable solvent, a solvent having a boiling point of 80°C to 200°C at a normal pressure may be mentioned. A solvent having at least one of a hydroxyl group, an ether structure, an ester structure, and a ketone structure is further preferable. Those solvents are preferable since excellent in dissolving the component (D) and the component (B) and excellent in wetting the base material.
Besides the component (D), the component (E), and the component (B), in accordance with various purposes, the composition (2) according to this embodiment may further contain at least one addition component (F) without degrading the advantage of the present invention. As the addition component described above, for example, a sensitizer, a hydrogen donor, a surfactant, a cross-linking agent, an antioxidant, or a polymerization inhibitor may be mentioned.
Although varied depending on the types of component (D), component (E), and component (B) and the blending rates thereof, the viscosity of the composition (2) according to this embodiment at 23°C is preferably 0.5 to 20 mPa s. The viscosity described above is more preferably 1 to 10 mPa s and further preferably 1 to 5 mPa s. Since the viscosity of the composition (2) is set to 20 mPa s or less, excellent coatability is obtained, and the thickness of the cured layer can be easily adjusted.
The particles according to this embodiment indicate minute foreign particles. The particles each typically indicate a gel or a solid particulate substance having a particle diameter of several nanometers to several micrometers or an air bubble (hereinafter simply referred to as "nanobubble") such as a nanobubble or a microbubble.
As described above, when many particles having a certain particle diameter or more are contained in the liquid material L, the nanoimprint process may be adversely influenced thereby in some cases. In particular, when the nanoimprint process is repeatedly performed on different regions on the substrate as described below, if damage is done to the mold during the process, every subsequent transferred pattern has a defect. As a result, the yield is seriously decreased.
When the distance between front ends of convex portions of the concave-convex pattern formed in the surface of the mold is increased by some sort of force applied to the pattern, and the front end is brought into contact with a front end adjacent thereto, damage is liable to be done to the mold. Hereinafter, the influence of the particles contained in the liquid material L is considered.
When a semiconductor device is manufactured using the liquid material L according to this embodiment, if metal impurities are present in the liquid material L, a substrate to be processed is contaminated by the metal impurities when the liquid material L is applied thereon. As a result, the semiconductor properties of a semiconductor device to be obtained may be adversely influenced thereby in some cases. That is, the yield of the nanoimprint process may be decreased in some cases.
When a semiconductor device is manufactured using the liquid material L according to this embodiment, if organic impurities are present in the liquid material L, defects may be generated in some cases. For example, when the organic impurities are present in the composition (1), for example, defects may be generated in a pattern obtained after molding.
[a] a step of filtrating a crude nanoimprint liquid material at a flow rate of less than 0.03 L/min using a filter having a pore diameter of 50 nm or less, and
[b] a step of recovering a flow fraction other than an initial flow fraction of the crude nanoimprint liquid material passing through the filter in a container connected to a particle number concentration measurement system.
[1] a first step (arrangement step) of arranging the above photocurable composition according to this embodiment on a substrate;
[2] a second step (mold contact step) of bringing the photocurable composition into contact with a mold;
[4] a third step (light irradiation step) of irradiating the photocurable composition with light; and
[5] a fourth step (mold release step) of releasing the cured product obtained in the step [4] from the mold.
In this step (arrangement step), as shown in Fig. 1A, a
Next, as shown in Fig. 1B, a
Next, if needed, as shown in Fig. 1C, the position of the mold and/or that of the substrate to be processed are adjusted so that a mold-
Next, as shown in Fig. 1D, while the alignment is performed in the step [3], a contact portion between the
Next, the cured
Although the cured film obtained in the mold release step, which is the step [5], has a specific pattern shape, in a region other than the region in which the pattern shape is formed, the cured film may partially remain in some cases (hereinafter, the part of the cured film as described above is called "residual film"). In the case as described above, as shown in Fig. 1F, from the cured film having a pattern shape thus obtained, a cured film (residual film) present in the region in which the cured film should be removed is removed. Accordingly, a cured
The cured
A cured layer obtained by the cured layer forming step which is the step [α] may include an adhesion layer, an underlayer, an intermediate layer, a topcoat layer, or a smooth layer but is not limited thereto.
(1) Preparation of Curable Composition (b-1)
First, the following component (A), component (B), and addition component (C) were blended together, and in a
<A-1> isobornyl acrylate (trade name: IB-XA, manufactured by Kyoeisha Chemical Co., Ltd.): 9.0 parts by weight
<A-2> benzyl acrylate (trade name: V#160, manufactured by Osaka Organic Industry Ltd.): 38.0 parts by weight
<A-3> neopentyl glycol diacrylate (trade name: NP-A, manufactured by Kyoeisha Chemical Co., Ltd.): 47.0 parts by weight
<B-1> Lucirin TPO (manufactured by BASF) (Formula (f)): 3 parts by weight
<C-1> SR-730 (manufactured by Aoki Oil Industrial Co., Ltd.) (Formula (i)): 1.6 parts by weight
<C-2> 4,4'-bis(diethylamine)benzophenone (manufactured by Tokyo Chemical Industry Co., Ltd.) (Formula (g)): 0.5 parts by weight
The measurement of particle number concentration of particles in a curable composition in each of Examples and Comparative Examples was performed using a liquid-borne particle sensor KS-41B (with option for 0.07-μm size particle, manufactured by Rion Co., Ltd.). However, since a purification step, such as filtration, was not performed on the curable composition (b-1) of this Comparative Example, the particle number concentration of particles thereof is estimated remarkably high. When the measurement of particle number concentration of particles in the curable composition (b-1) as described above is performed, a measurement cell and a flow path of the liquid-borne particle sensor are probably seriously contaminated by the particles. Hence, the measurement of particle number concentration of particles in the curable composition (b-1) was not performed.
(1) Preparation of Curable Composition (b-2)
After the curable composition (b-1) of Comparative Example 1 was prepared, a pressure filtration was performed using the purification system shown in Fig. 3B, so that a curable composition (b-2) was obtained. In this step, as a filter of the
The measurement of particle number concentration of particles in the curable composition (b-2) thus prepared was performed using a liquid-borne particle sensor KS-41B (with an option for 0.07-μm size particle, manufactured by Rion Co., Ltd.). In addition, a controller KE-40B1 (manufactured by Rion Co., Ltd.) and a syringe sampler KZ-30W1 (manufactured by Rion Co., Ltd.) were also used together therewith. By driving the syringe sampler, 10 mL of the curable composition (b-2) was transported so as to pass through a measurement cell of the liquid-borne particle sensor at a flow rate of 5 mL/min. By the method described above, the particle number concentration of particles having a particle diameter of 0.07 μm or more in the curable composition (b-2) was measured. The operation described above was repeatedly performed three times, and the average value was obtained from the particle number concentrations thus measured and was regarded as the particle number concentration (average) of particles having a particle diameter of 0.07 μm or more. The particle number concentration (average) of particles having a particle diameter of 0.07 μm or more in the curable composition (b-2) was 616/mL.
(1) Preparation of Curable Composition (b-3)
After the curable composition (b-1) of Comparative Example 1 was prepared, a pressure filtration was performed using the purification system shown in Fig. 3B, so that a curable composition (b-3) was obtained. In this step, as a filter of the
When the particle number concentration of particles was measured in a manner similar to that of Comparative Example 2, the particle number concentration (average) of particles having a particle diameter of 0.07 μm or more in the curable composition (b-3) was 444/mL.
(1) Preparation of Curable Composition (b-4)
After the curable composition (b-3) of Comparative Example 3 was prepared, a cycle filtration was performed using a purification system shown in Fig. 5A, so that a curable composition (b-4) was obtained. In this step, as a filter of a purification device, a filter having a pore diameter of 5 nm (Impact Mini, manufactured by Nihon Entegris K.K.) was used. By a dispensing device (IntelliGen Mini, manufactured by Nihon Entegris K.K.) of the purification device shown in Fig. 5A, the curable composition (b-3) received in a container was transported to the purification device, so that a cycle filtration was performed. In this step, by the use of compressed nitrogen at a pressure of 0.27 MPa, the dispensing device was set so that the curable composition (b-3) was allowed to pass through the filter at an average flow rate of 4.5 mL/min.
When the particle number concentration of particles was measured in a manner similar to that of Comparative Example 2, the particle number concentration (average) of particles having a particle diameter of 0.07 μm or more in the curable composition (b-4) was 889/mL.
(1) Preparation of Curable Composition (a-1)
After the curable composition (b-3) of Comparative Example 3 was prepared, a cycle filtration was performed in a manner similar to that of Comparative Example 4. In this step, as shown in Fig. 6A, before the cycle filtration was performed, a front end of a liquid sampling tube of a particle sensor was placed in advance in the curable composition (b-3). As described above a curable composition (a-1) of Example 1 was prepared.
Except that before the cycle filtration was started, the front end of the liquid sampling tube of the particle sensor was placed in advance in a liquid to be formed into the curable composition (a-1), the particle number concentration of particles was measured in a manner similar to that of Comparative Example 2. The particle number concentration (average) of particles having a particle diameter of 0.07 μm or more in the curable composition (a-1) was 99.9/mL.
(1) Preparation of Curable Composition (a-2)
Except that after the curable composition (b-3) of Comparative Example 3 was prepared, the dispensing number was set to 120 times, a cycle filtration was performed in a manner similar to that of Example 1, and a targeted flow fraction (curable composition (a-2)) was obtained in a
The particle number concentration of particles was measured in a manner similar to that of Example 1. The particle number concentration (average) of particles having a particle diameter of 0.07 μm or more in the curable composition (a-2) was 303/mL.
(1) Preparation of Curable Composition (b-5)
Except that after the curable composition (b-3) of Comparative Example 3 was prepared, a P-bottle was used for a cycle filtration, the cycle filtration was performed in a manner similar to that of Comparative Example 4, and a targeted flow fraction (curable composition (b-5)) was obtained in the P-bottle (Fig. 5B). As described above, the curable composition (b-5) of Comparative Example 5 was prepared.
Except that the particle number concentration of particles in the P-bottle was measured, the particle number concentration of particles was measured in a manner similar to that of Comparative Example 4. The particle number concentration (average) of particles having a particle diameter of 0.07 μm or more in the curable composition (b-5) was 3,268/mL.
(1) Preparation of Curable Composition (a-3)
After the curable composition (b-3) of Comparative Example 3 was prepared, except that before a cycle filtration was started, the front end of the liquid sampling tube of the particle sensor was connected as a long tube of the P-bottle, the cycle filtration was performed in a manner similar to that of Comparative Example 5. Accordingly, a targeted flow fraction (curable composition (a-3)) was obtained in the P-bottle (Fig. 6B). As described above, the curable composition (a-3) of Example 3 was prepared.
Except that before the cycle filtration was started, the front end of the liquid sampling tube of the particle sensor was placed in advance in a liquid to be formed into the curable composition (a-3), the particle number concentration of particles was measured in a manner similar to that of Comparative Example 5. The particle number concentration (average) of particles having a particle diameter of 0.07 μm or more in the curable composition (a-3) was 56.1/mL.
(1) Preparation of Monomer liquid (c-1)
Except that isobornyl acrylate (trade name: IB-XA, manufactured by Kyoeisha Chemical Co., Ltd.) was used instead of using the curable composition (b-1), a pressure filtration was performed in a manner similar to that of Comparative Example 3, and a targeted flow fraction (monomer liquid (c-1)) was obtained in a
The particle number concentration of particles was measured in a manner similar to that of Comparative Example 2. The particle number concentration (average) of particles having a particle diameter of 0.07 μm or more in the monomer liquid (c-1) was 79.5/mL.
(1) Preparation of Curable Composition (a-4)
Except that approximately 92 percent by weight of the acrylic monomer mixture, approximately 5 percent by weight of the photo initiator, and approximately 3 percent by weight of the surfactant, each of which was as same as or similar to each in the curable composition (b-1), were used, a curable composition (a-4) of Example 4 was prepared in a manner similar to that of Example 1.
The particle number concentration of particles was measured in a manner similar to that of Example 1. The particle number concentration (average) of particles having a particle diameter of 0.07 μm or more in the curable composition (a-4) was less than 100/mL.
Next, by the method shown below, a cured product pattern was formed by a nanoimprint process using the curable composition (a-4). Subsequently, the cured product pattern thus formed was observed by an electron microscope (SEMVision G5, manufactured by Applied Materials).
On a 300-mm silicon wafer on which an adhesion layer having a thickness of 3 nm was formed, 1,440 liquid droplets (11 pL/one liquid droplet) of the curable composition (a-4) were dripped by an ink-jet method. In addition, when the liquid droplets were each dripped, dripping was performed in a region of the silicon wafer having a width of 26 mm and a length of 33 mm so that the intervals between the liquid droplets were equivalent to each other in the above region.
Next, a quartz mold (width: 26 mm, length: 33 mm) which was not surface-treated and in which a 28-nm line and space (L/S) pattern having a height of 60 nm was formed was brought into contact with the curable composition (a-4) on the silicon wafer.
Next, the quartz mold was pulled up at a rate of 0.5 mm/s so as to be separated from the cured product. When the quartz mold was released, a cured product pattern having an average thickness of 40.1 nm was formed on the silicon wafer.
The cured product pattern thus formed and a mask pattern of the quartz mold released in the mold release step were observed using an electron microscope. The observation was performed on a 6.75-μm square region of each of the cured product pattern and the mask pattern.
Claims (19)
- A nanoimprint liquid material in which the particle number concentration of particles having a particle diameter of 0.07 μm or more is less than 310/mL.
- The nanoimprint liquid material according to Claim 1, wherein the particle number concentration of particles having a particle diameter of 0.07 μm or more is less than 137/mL.
- The nanoimprint liquid material according to Claim 1 or 2, wherein the nanoimprint liquid material contains at least one of a monofunctional (meth)acrylic compound and a multifunctional (meth)acrylic compound.
- The nanoimprint liquid material according to any one of Claims 1 to 3, wherein the nanoimprint liquid material contains a fluorine-based surfactant or a hydrocarbon-based surfactant.
- The nanoimprint liquid material according to any one of Claims 1 to 4, wherein the viscosity of the nanoimprint liquid material is 1 to 100 mPa s.
- The nanoimprint liquid material according to any one of Claims 1 to 5, wherein the nanoimprint liquid material is a pattern forming curable composition.
- The nanoimprint liquid material according to any one of Claims 1 to 5, wherein the nanoimprint liquid material is an adhesion layer forming composition.
- A nanoimprint liquid material to which a concave-convex pattern is transferred by a nanoimprint process using a mold having the concave-convex pattern in the surface thereof,
wherein when the width of a concave portion of the concave-convex pattern of the mold is S (nm), the particle number concentration of particles having a particle diameter of 2.5S (nm) or more is less than 310/mL. - The nanoimprint liquid material according to Claim 8, wherein the width (S) of the concave portion is 4 to less than 30 nm, and when the depth of the concave portion is H (nm), the aspect ratio (H/S) of the concave portion of the concave-convex pattern is 1 to 10.
- A method for manufacturing a cured product pattern, the method comprising:
a first step of arranging the nanoimprint liquid material according to Claim 6 on a substrate;
a second step of bringing the nanoimprint liquid material into contact with a mold;
a third step of irradiating the nanoimprint liquid material with light to form a cured product; and
a fourth step of releasing the cured product from the mold. - The method for manufacturing a cured product pattern according to Claim 10, further comprising a step of forming an adhesion layer from the nanoimprint liquid material according to Claim 7 on an upper surface of the substrate.
- The method for manufacturing a cured product pattern according to Claim 10 or 11, wherein the mold is a mold having a concave-convex pattern in the surface thereof,
the width of a concave portion of the concave-convex pattern is 4 to less than 30 nm, and
the aspect ratio of a convex portion of the concave-convex pattern is 1 to 10. - The method for manufacturing a cured product pattern according to any one of Claims 10 to 12, further comprising, between the second step and the third step, a step of aligning the substrate with the mold.
- The method for manufacturing a cured product pattern according to any one of Claims 10 to 13, wherein the first step to the fourth step are repeatedly performed a plurality of times on different regions on the substrate.
- The method for manufacturing a cured product pattern according to any one of Claims 10 to 14, wherein the second step is performed in an atmosphere containing a condensable gas.
- A method for manufacturing an optical component, the method comprising: a step of obtaining a cured product pattern by the method for manufacturing a cured product pattern according to any one of Claims 10 to 15.
- A method for manufacturing a circuit board, the method comprising:
a step of obtaining a cured product pattern by the method for manufacturing a cured product pattern according to any one of Claims 10 to 15; and
a step of performing etching or ion implantation on the substrate using the cured product pattern as a mask. - The method for manufacturing a circuit board according to Claim 17, wherein the circuit board is a circuit board used for a semiconductor element.
- A method for manufacturing a nanoimprint liquid material, the method comprising: a purification step of purifying a nanoimprint liquid material by filtration with a filter,
wherein the purification step comprises:
[a] a step of filtrating a crude nanoimprint liquid material at a flow rate of less than 0.03 L/min with a filter having a pore diameter of 50 nm or less; and
[b] a step of recovering a flow fraction of the crude nanoimprint liquid material passing through the filter other than an initial flow fraction in a container connected to a particle number concentration measuring system.
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KR1020177026186A KR20170118191A (en) | 2015-02-27 | 2016-02-23 | Liquid material for nanoimprint, method of manufacturing liquid material for nanoimprint, method of manufacturing cured product, method of manufacturing optical component, and method of manufacturing circuit board |
CN202210677002.9A CN114975098A (en) | 2015-02-27 | 2016-02-23 | Nanoimprint liquid material, method for producing pattern of cured product, and method for producing circuit board |
CN201680012435.5A CN107251193B (en) | 2015-02-27 | 2016-02-23 | Nanoimprint liquid material, method for producing pattern of cured product, method for producing optical component, and method for producing circuit board |
KR1020197013574A KR102484517B1 (en) | 2015-02-27 | 2016-02-23 | Nanonimprint liquid material, method for manufacturing nanoimprint liquid material, method for manufacturing cured product pattern, method for manufacturing optical component, and method for manufacturing circuit board |
US15/553,938 US20180039170A1 (en) | 2015-02-27 | 2016-02-23 | Nanonimprint liquid material, method for manufacturing nanoimprint liquid material, method for manufacturing cured product pattern, method for manufacturing optical component, and method for manufacturing circuit board |
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US20120076948A1 (en) * | 2010-09-27 | 2012-03-29 | Fujifilm Corporation | Method for producing curable composition for imprints |
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