WO2016118536A3 - Printable high dielectric constant and self-healable dielectric polymer composition - Google Patents

Printable high dielectric constant and self-healable dielectric polymer composition Download PDF

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Publication number
WO2016118536A3
WO2016118536A3 PCT/US2016/013974 US2016013974W WO2016118536A3 WO 2016118536 A3 WO2016118536 A3 WO 2016118536A3 US 2016013974 W US2016013974 W US 2016013974W WO 2016118536 A3 WO2016118536 A3 WO 2016118536A3
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WO
WIPO (PCT)
Prior art keywords
self
polymer
depositing
metal
substrate
Prior art date
Application number
PCT/US2016/013974
Other languages
French (fr)
Other versions
WO2016118536A2 (en
Inventor
Howard E. Katz
Weiguo HUANG
Original Assignee
The Johns Hopkins University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by The Johns Hopkins University filed Critical The Johns Hopkins University
Publication of WO2016118536A2 publication Critical patent/WO2016118536A2/en
Publication of WO2016118536A3 publication Critical patent/WO2016118536A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Provided is a method for making a self-healing polymer-based organic field-effect transistor (SHP-OFET). The method includes a method for making a self-healing polymer- based organic field-effect transistor (SHP-OFET). The method includes depositing a first metal and a second metal over a flexible substrate, patterning the first metal and the second metal to form a source electrode and a drain electrode, respectively, depositing a solution comprising an organic semiconductor over the substrate to form an organic semiconductor channel, depositing a solution including a first polymer and a second polymer over the substrate to form a self-healing polymer blend dielectric layer,, and depositing a conductor over the substrate to form a gate. The first polymer includes at least one of a hydroxyalkyl methacrylate, an acrylate, methacrylamide, acrylamides, or mixtures thereof, and the second polymer includes a polyimine additive.
PCT/US2016/013974 2015-01-20 2016-01-19 Printable high dielectric constant and self-healable dielectric polymer composition WO2016118536A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562105559P 2015-01-20 2015-01-20
US62/105,559 2015-01-20

Publications (2)

Publication Number Publication Date
WO2016118536A2 WO2016118536A2 (en) 2016-07-28
WO2016118536A3 true WO2016118536A3 (en) 2016-09-01

Family

ID=56417919

Family Applications (1)

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PCT/US2016/013974 WO2016118536A2 (en) 2015-01-20 2016-01-19 Printable high dielectric constant and self-healable dielectric polymer composition

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WO (1) WO2016118536A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3051979B1 (en) * 2016-05-25 2018-05-18 Soitec METHOD FOR THE HEALING OF DEFECTS IN A LAYER OBTAINED BY IMPLANTATION AND DETACHMENT OF A SUBSTRATE
EP3841377B1 (en) 2018-08-21 2024-10-02 Technion Research & Development Foundation Limited Multi-functional field effect transistor with intrinsic self-healing properties
WO2022098892A1 (en) * 2020-11-05 2022-05-12 The Regents Of The University Of Colorado, A Body Corporate Self-healable, recyclable, and reconfigurable wearable electronics device
CN113793901B (en) * 2021-09-16 2023-11-07 南京大学 Pentacene organic field effect transistor based on polymer doped N-type organic semiconductor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060338A (en) * 1989-01-10 2000-05-09 Mitsubishi Denki Kabushiki Kaisha Method of making a field effect transistor
US20070270675A1 (en) * 2006-05-17 2007-11-22 Michael John Kane Implantable Medical Device with Chemical Sensor and Related Methods
US20130200345A1 (en) * 2012-02-07 2013-08-08 Polyera Corporation Photocurable Polymeric Materials and Related Electronic Devices
US20130256643A1 (en) * 2006-02-17 2013-10-03 Samsung Electronics Co., Ltd. Methods for forming banks and organic thin film transistors comprising such banks

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060338A (en) * 1989-01-10 2000-05-09 Mitsubishi Denki Kabushiki Kaisha Method of making a field effect transistor
US20130256643A1 (en) * 2006-02-17 2013-10-03 Samsung Electronics Co., Ltd. Methods for forming banks and organic thin film transistors comprising such banks
US20070270675A1 (en) * 2006-05-17 2007-11-22 Michael John Kane Implantable Medical Device with Chemical Sensor and Related Methods
US20130200345A1 (en) * 2012-02-07 2013-08-08 Polyera Corporation Photocurable Polymeric Materials and Related Electronic Devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WEIGUO HUANG ET AL.: "A High-Capacitance Salt-Free Dielectric for Self- Healable, Printable, and Flexible Organic Field Effect Transistors and Chemical Sensor", ADVANCED FUNCTIONAL MATERIALS, vol. 25, no. 24, 12 May 2015 (2015-05-12), pages 3745 - 3755 *

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WO2016118536A2 (en) 2016-07-28

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