WO2016117253A1

WO2016117253A1 - Exhaust gas treatment device and substrate treatment device

Info

Publication number: WO2016117253A1
Application number: PCT/JP2015/085390
Authority: WO
Inventors: 隆之沼田; 藤倉　序章; 今野　泰一郎; 秀聖根本
Original assignee: 住友化学株式会社
Priority date: 2015-01-20
Filing date: 2015-12-17
Publication date: 2016-07-28
Also published as: JP6591164B2; TW201634730A; JP2016131932A

Abstract

A technique is provided for reducing the replacement frequency of a filter. This exhaust gas treatment device is provided with a container into which the exhaust gas emitted from a reaction container is introduced, a filter which is provided in the container and which captures reaction byproducts contained in the exhaust gas, and a collision member which collides with the filter and thereby removes from the filter the reaction byproducts captured by the filter.

Description

Exhaust gas processing apparatus and substrate processing apparatus

The present invention relates to an exhaust gas processing apparatus and a substrate processing apparatus connected to a reaction vessel for processing a substrate.

Conventionally, there has been proposed an exhaust gas processing apparatus that is connected to a reaction vessel for processing a substrate and captures a reaction by-product contained in exhaust gas discharged from the reaction vessel with a filter (see, for example, Patent Document 1). .

JP 2009-016635 A

In the exhaust gas processing apparatus described above, when the filter captures a predetermined amount of reaction by-products, the filter may become clogged. Therefore, it is necessary to replace the filter before the filter is completely clogged.

An object of the present invention is to provide a technique capable of solving the above-described problems and reducing the frequency of filter replacement.

According to one aspect of the invention,
An exhaust gas processing apparatus connected to a reaction vessel for processing a substrate,
A container into which exhaust gas discharged from the reaction container is introduced;
A filter provided in the container for capturing reaction by-products contained in the exhaust gas;
There is provided an exhaust gas processing apparatus comprising: a collision member that collides with the filter and removes the reaction byproduct captured by the filter from the filter by the impact.

According to another aspect of the invention,
A substrate processing apparatus comprising an exhaust gas processing apparatus connected to a reaction vessel for processing a substrate,
The exhaust gas treatment device comprises:
A container into which exhaust gas discharged from the reaction container is introduced;
A filter provided in the container for capturing reaction by-products contained in the exhaust gas;
There is provided a substrate processing apparatus comprising: a collision member that collides with the filter and removes the reaction byproduct captured by the filter from the filter by the impact.

According to the present invention, the frequency of filter replacement can be reduced.

1 is a schematic vertical sectional view of a substrate processing apparatus including an exhaust gas processing apparatus according to an embodiment of the present invention. It is the schematic of the exhaust-gas processing apparatus concerning one Embodiment of this invention, (a) shows a longitudinal cross-sectional view, (b) shows a cross-sectional view. The schematic plan view of the collision member with which the exhaust-gas processing apparatus concerning one Embodiment of this invention is provided is shown. The schematic of the collision member with which the exhaust-gas processing apparatus concerning other embodiment of this invention is provided is shown. The cross-sectional schematic of the exhaust-gas processing apparatus concerning other embodiment of this invention is shown.

(Knowledge obtained by the inventors)
First, prior to the description of the embodiment of the present invention, knowledge obtained by the inventors will be described. In the exhaust gas processing apparatus described above, it is conceivable to reduce the number of filter replacements by injecting inert gas from the inert gas injection unit to the filter and removing reaction byproducts captured by the filter from the filter. ing. However, in such a configuration, the reaction by-product can be removed only at and near the filter portion where the inert gas is injected (struck by the inert gas), and the removal of the reaction by-product is local. The present inventors have found that there is a possibility of becoming a problem. The present invention is based on the above findings found by the inventors.

<One Embodiment of the Present Invention>
(1) Configuration of Substrate Processing Apparatus and Exhaust Gas Processing Apparatus Hereinafter, a substrate processing apparatus according to an embodiment of the present invention and an exhaust gas processing apparatus included in the substrate processing apparatus will be described with reference mainly to FIGS. While explaining. In this embodiment, a case where the substrate processing apparatus is a hydride vapor phase epitaxy (HVPE) apparatus will be described as an example.

As shown in FIG. 1, the HVPE apparatus as the substrate processing apparatus 20 includes a reaction vessel 21 formed of a heat resistant material such as quartz (SiO ₂ ). A processing chamber 22 is formed in the cylindrical hollow portion in the reaction vessel 21. In the processing chamber 22, a susceptor 23 is provided as a substrate support unit that supports the substrate 100 in the processing chamber 22. The susceptor 23 is provided with a rotating shaft 23a, and the susceptor 23 is configured to be rotatable.

The 1st heater 24 and the 2nd heater 25 are provided in the outer periphery of the reaction container 21 as a heating part. A processing gas generator 26 described later is heated to a predetermined temperature (for example, 600 ° C. to 900 ° C.) mainly by the first heater 24. The substrate 100 in the processing chamber 22 is heated to a predetermined temperature (for example, 500 ° C. to 1200 ° C.) mainly by the second heater 25.

In the reaction vessel 21, there is provided a processing gas generator 26 that generates a processing gas by reacting the metal raw material 27 with a reactive gas. The processing gas generator 26 includes a container 28 that stores a metal raw material 27. For example, the container 28 is formed in a rectangular shape in plan view. The container 28 is formed of a nonmetallic material having heat resistance and corrosion resistance. For example, the container 28 may be made of high-purity quartz.

As the metal raw material 27, for example, a raw material that is solid at room temperature is used. For example, a gallium (Ga) solid, an indium (In) solid, or an aluminum (Al) solid, which is a metal raw material containing a group III element, is used as the metal raw material 27. The metal raw material 27 may be solid or liquid depending on the temperature in the processing gas generator 26 and the metal used.

The reaction vessel 21 is provided with a first process gas supply pipe 29 and a reaction gas supply pipe 30 in an airtight manner so as to penetrate the side portion of the reaction vessel 21. The first processing gas supply pipe 29 and the reaction gas supply pipe 30 are formed of a nonmetallic material (for example, quartz) having heat resistance, corrosion resistance, and the like.

On the outside of the reaction vessel 21 in the first processing gas supply pipe 29, supply and stop of the first processing gas to the substrate 100 in the first processing gas supply source 29a and the processing chamber 22 in order from the upstream side. A valve 29b is provided as a valve for performing the above. From the first processing gas supply pipe 29, for example, ammonia (NH ₃ ) gas is supplied as the first processing gas to the substrate 100 in the processing chamber 22.

Outside the reaction vessel 21 in the reaction gas supply pipe 30, a reaction gas supply source 30 a and a valve 30 b as a valve for supplying and stopping the reaction gas to the process gas generator 26 are provided in order from the upstream side. . For example, chlorine (Cl ₂ ) gas or hydrogen chloride (HCl) gas is supplied from the reaction gas supply pipe 30 as a reaction gas into the processing gas generator 26 (container 28). The processing gas generator 26 includes a second processing gas supply pipe 31 that supplies the processing gas (second processing gas) generated in the processing gas generator 26 to the substrate 100. The second processing gas supply pipe 31 is formed of a nonmetallic material (for example, quartz) having heat resistance, corrosion resistance, and the like. For example, gallium chloride (GaCl) gas is supplied from the second processing gas supply pipe 31 to the substrate 100 in the processing chamber 22 as the second processing gas.

The reaction vessel 21 is provided with an exhaust pipe 32 for exhausting the atmosphere in the processing chamber 22. The exhaust pipe 32 is provided with a vacuum pump (or blower) 32a as an exhaust device.

The exhaust gas treatment device 1 is connected to the reaction vessel 21. Specifically, the exhaust gas treatment device 1 is connected to the exhaust pipe 32 on the upstream side of the vacuum pump 32a. The exhaust gas treatment device 1 is configured to remove reaction byproducts contained in the exhaust gas discharged from the reaction vessel 21.

As shown in FIG. 2 (a), the exhaust gas treatment device 1 includes a container 2 into which exhaust gas discharged from the reaction container 21 is introduced. The container 2 is made of a corrosion-resistant metal material (for example, SUS) or a non-metal material (for example, quartz) having heat resistance and corrosion resistance.

In the container 2, a partition wall 2c that partitions (divides) the space in the container 2 into two upper and lower spaces is provided. The space below the partition wall 2c in the container 2 becomes a chamber 2a (exhaust gas introduction chamber 2a) into which exhaust gas is introduced. The space above the partition wall 2c in the container 2 becomes a chamber 2b (filtered gas introduction chamber 2b) into which exhaust gas (filtered gas) from which reaction byproducts have been removed (filtered) by a filter 4 described later is introduced. The exhaust gas introduction chamber 2a and the filtered gas introduction chamber 2b are communicated with each other through a filter 4 described later.

For example, as shown in FIG. 2B, the partition wall 2c is provided with a plurality of (for example, four) filters 4 for capturing (filtering) reaction byproducts contained in the exhaust gas. The filter 4 is formed in a cylindrical shape having a cylindrical hollow portion of, for example, a cylindrical shape or a rectangular tube shape. When the substrate processing apparatus 20 performs a substrate processing for forming a GaN film on the substrate 100 using NH ₃ gas as the first processing gas and GaCl gas as the second processing gas, the filter 4 Thus, as a reaction by-product, for example, ammonium chloride (NH ₄ Cl) having a fine particle shape and high viscosity is captured.

The exhaust pipe 32 is hermetically connected to the container 2 (for example, the side wall) constituting the exhaust gas introduction chamber 2a, and an introduction port 3a for introducing the exhaust gas discharged from the reaction container 21 is provided in the container 2. ing. A container 2 (for example, a top plate) constituting the filtered gas introduction chamber 2b is provided with a discharge port 3b through which the filtered gas that has passed through the filter 4 is discharged from the container 2.

In the exhaust gas treatment device 1, the exhaust gas introduced from the introduction port 3a flows through the exhaust gas introduction chamber 2a, passes through the filter 4, is introduced into the filtered gas introduction chamber 2b, and is discharged from the discharge port 3b to the outside of the container 2. It is configured to be discharged. While the exhaust gas passes through the filter 4, reaction byproducts contained in the exhaust gas are captured by the filter 4.

The exhaust gas treatment device 1 includes a collision member 5 that causes the filter 4 to collide (hit). For example, when four filters 4 are provided, the collision member 5 is preferably disposed between the

adjacent filters

4 and 4. The collision member 5 is made of, for example, a metal material having corrosion resistance (for example, SUS). When the collision member 5 collides with the filter 4, it is possible to give an impact to the filter 4 and the reaction byproduct captured by the filter 4. Thereby, the reaction by-product captured by the filter 4 can be removed from the filter 4 (dropped from the filter 4).

The collision member 5 is configured to be slidable with respect to at least a part of the outer peripheral surface of the filter 4 after colliding with the filter 4. For example, the collision member 5 is configured to be movable along the circumferential direction of the filter 4 so as to rub at least a part of the outer peripheral side surface of the filter 4 after colliding with the filter 4.

As shown in FIG. 3, the collision member 5 includes, for example, a rod-shaped member 5a, and is configured to cause the rod-shaped member 5a to collide with the filter 4. When the filter 4 has a cylindrical shape, for example, the rod-like member 5a is provided along the side wall of the filter 4 (that is, extends along the side wall of the container 2). The rod-shaped member 5a is made of, for example, a metal material having corrosion resistance (for example, SUS).

When the collision member 5 collides with the filter 4, for example, a plate-like member 5 b formed of a flexible member is attached (provided) to a portion of the rod-shaped member 5 a that collides with the filter 4. preferable. As the flexible member, for example, a rubber member such as silicon rubber, natural rubber, or synthetic rubber can be used.

The plate-like member 5b preferably has a slit 5c on its side, for example, and is configured to reduce impact applied to the filter 4 by being deformed when colliding with the filter 4. Each of the slits 5c has a predetermined width and is formed in the plate-like member 5b at a predetermined interval.

As shown in FIG. 2 (a), the rod-like member 5a is supported by the support member 6 from below. The support member 6 is provided airtight so as to penetrate the side wall of the container 2. The support member 6 is made of, for example, a metal material having corrosion resistance (for example, SUS).

For example, a handle 7 as a drive mechanism for moving the collision member 5 is provided outside the container 2 in the support member 6. Thereby, the collision member 5 can be moved from the outside of the container 2. The support member 6 may be included in the drive mechanism. When the handle 7 is manually moved in a predetermined direction, for example, the rod-shaped member 5a (plate-shaped member 5b) is moved in a predetermined direction via the support member 6, and the rod-shaped member 5a (plate-shaped member 5b) collides with the filter 4. be able to. Further, by moving the handle 7 in a predetermined direction, the plate-like member 5b is moved in the predetermined direction via the support member 6 and the rod-like member 5a, and the plate-like member 5b is moved against at least a part of the outer peripheral surface of the filter 4. Can be slid.

The exhaust gas treatment device 1 includes a trapping amount measurement sensor 8 that measures the amount of trapped reaction by-products (capture amount). When the trapping amount measured by the trapping amount measuring sensor 8 exceeds a predetermined value, the collision member 5 is moved by the handle 7 to cause the collision member 5 (for example, the plate-like member 5b) to collide with the filter 4. For example, a pressure measurement sensor that detects the pressure in the container 2 is used as the trapping amount measurement sensor 8, and when the pressure (internal pressure) in the container 2 (for example, in the exhaust gas introduction chamber 2 a) becomes a predetermined value or more, the handle 7 The collision member 5 is moved by this to cause the collision member 5 (for example, the plate-like member 5b) to collide with the filter 4.

In the container 2, a deposition space 10 for depositing reaction byproducts removed from the filter 4 is provided. Specifically, the deposition space 10 is provided in the lower part of the container 2 (exhaust gas introduction chamber 2a) in the vertical direction. In this case, the introduction port 3a is preferably provided above the deposition space 10 so as not to be blocked even when reaction by-products are deposited in the deposition space 10. . That is, the deposition space 10 is preferably formed in a region below the introduction port 3 a in the container 2.

The exhaust gas processing apparatus 1 is configured to introduce exhaust gas into the deposition space 10 from the introduction port 3a, and cause the exhaust gas to collide with the inner wall of the deposition space 10 (the inner wall of the container 2 constituting the deposition space 10). Preferably it is. For example, the inlet 3a is preferably provided with a rectifying plate 11 that guides exhaust gas that has passed through the inlet 3a into the deposition space 10. A nozzle may be connected to the introduction port 3a. Usually, the temperature of the inner wall of the deposition space 10 is lower than the temperature of the exhaust gas. For this reason, when the exhaust gas collides with the inner wall of the deposition space 10, the exhaust gas is cooled. As a result, the reaction by-product contained in the exhaust gas is also cooled and liquefied or solidified. Therefore, by causing the exhaust gas to collide with the inner wall of the deposition space 10, at least a part of the reaction byproduct contained in the exhaust gas can be adsorbed on the inner wall of the deposition space 10.

(2) Substrate Processing Step Next, a substrate processing step that is performed as one step of the semiconductor manufacturing process according to the present embodiment will be described. Such a process is performed by the substrate processing apparatus 20 described above. Here, an example in which a gallium nitride (GaN) film is formed as a semiconductor film over the substrate 100 will be described.

(Substrate loading process)
First, for example, Ga solid is accommodated (supplemented) in the processing gas generator 26 (container 28). Then, for example, a sapphire substrate as the substrate 100 is carried into the processing chamber 22 and placed on the susceptor 23.

(Pressure / temperature adjustment process)
After the atmosphere in the processing chamber 22 is evacuated by the vacuum pump 32a, for example, nitrogen (N ₂ ) gas is introduced into the processing chamber 22 to bring it to atmospheric pressure (pressure adjustment). Next, rotation of the susceptor 23 is started. The rotation of the susceptor 23 is continued at least until a film forming process described later is completed. Thereafter, the inside of the container 28 is heated by the first heater 24 so as to reach a predetermined temperature (for example, 600 ° C. to 900 ° C.). Thereby, the Ga solid in the container 28 is melted, and a Ga melt as the metal raw material 27 is generated. In parallel with the heating by the first heater 24, the substrate 100 in the processing chamber 22 is heated by the second heater 25 so that the substrate 100 reaches a predetermined temperature (for example, 500 ° C. to 1200 ° C.).

(Film formation process)
When the inside of the processing chamber 22 becomes atmospheric pressure, Ga melt is generated in the processing gas generator 26 (container 28), and the substrate 100 reaches a predetermined temperature, the valve 29b is opened to open the first processing gas. Supply of the first processing gas (for example, NH ₃ gas) from the supply pipe 29 to the substrate 100 in the processing chamber 22 is started.

Further, the valve 30b is opened, and supply of the reaction gas (for example, HCl gas) from the reaction gas supply pipe 30 into the processing gas generator 26 is started. As a result, the Ga melt and the reaction gas react in the processing gas generator 26 to generate a second processing gas (for example, GaCl gas).

The second processing gas generated in the processing gas generator 26 is supplied from the second processing gas supply pipe 31 to the substrate 100 in the processing chamber 22. Then, the first processing gas and the second processing gas are reacted to form a GaN film having a predetermined thickness on the substrate 100.

(Cooling temperature, return to atmospheric pressure, substrate unloading process)
When the thickness of the GaN film reaches a predetermined thickness, the supply of the first processing gas to the substrate 100 and the supply of the reaction gas into the processing gas generator 26 are stopped. In addition, heating by the first heater 24 and the second heater 25 is stopped, and the temperature in the processing gas generator 26, the processing chamber 22, and the substrate 100 is lowered. Further, after the reaction gas remaining in the processing chamber 22 and the first and second processing gases are exhausted by the vacuum pump 32a, for example, N ₂ gas is introduced into the processing chamber 22 to return to atmospheric pressure. Then, the substrate 100 is removed from the susceptor 23 and the substrate 100 is carried out of the processing chamber 22.

(Exhaust gas treatment process)
In the temperature lowering / atmospheric pressure recovery / substrate unloading process from the film forming process described above, the exhaust gas is exhausted from the reaction vessel 21 by exhaust gas processing apparatus 1 (exhaust gas) by exhausting (evacuating) the inside of the processing chamber 22 by the vacuum pump 32a. It is introduced into the introduction chamber 2a). Specifically, the exhaust gas is guided into the deposition space 10 from the introduction port 3 a by the rectifying plate 11 so that the exhaust gas collides with the inner wall of the deposition space 10. Then, a part of the reaction by-product contained in the exhaust gas is adsorbed on the inner wall of the deposition space 10. Further, the exhaust gas is passed through the filter 4, and the reaction by-product contained in the exhaust gas is captured by the filter 4.

Further, at a predetermined timing (for example, when the captured amount measured by the captured amount measuring sensor 8 becomes a predetermined value), the collision member 5 is collided with the filter 4 by moving the collision member 5 in a predetermined direction by the handle 7 as a driving mechanism. Let As a result, reaction by-products captured by the filter 4 fall from the filter 4 and accumulate in the deposition space 10.

After colliding the collision member 5 with the filter 4, the collision member 5 is moved in a predetermined direction by the handle 7, and the collision member 5 is slid with respect to at least a part of the outer peripheral surface of the filter 4. As a result, the reaction by-product captured by the filter 4 is wiped off (stripped) from the filter 4 and falls and accumulates in the deposition space 10.

(3) Effects According to the Present Embodiment According to the present embodiment, one or a plurality of effects described below are exhibited.

(A) By causing the collision member 5 to collide with the filter 4, it is possible to give an impact to the filter 4. Thereby, the reaction by-product captured by the filter 4 can be removed (dropped) from the filter 4. As a result, it is possible to lengthen the period from the start of use of the filter 4 until the filter 4 is clogged, and the replacement frequency of the filter 4 can be reduced. Thereby, the fall of the productivity of the semiconductor device formed with the substrate processing apparatus 20 can be suppressed. For example, the operation stop time of the substrate processing apparatus 20 accompanying the replacement of the filter 4 can be shortened.

(B) Further, reaction by-products can be removed from the filter 4 without interrupting or stopping the substrate processing (film formation processing) and without disassembling the exhaust gas processing apparatus 1. . Therefore, the effect (a) can be further obtained.

(C) By causing the collision member 5 to collide with the filter 4, a strong impact can be given to the filter 4. Thereby, an impact can be given over a wide range of the filter 4, and reaction by-products can be removed over a wide range of the filter 4. Therefore, the effect (a) can be further obtained.

On the other hand, in the exhaust gas treatment device that removes reaction byproducts captured by the filter 4 from the filter 4 by injecting inert gas from the inert gas injection unit to the filter 4, the reaction byproducts are removed. May be local. For example, the reaction by-product may be removed only at the location where the inert gas is injected and at the location of the filter 4 in the vicinity thereof.

Further, when the nozzle included in the inert gas injection unit swings due to the reaction when the inert gas is injected, at least a part of the nozzle collides with the filter 4, and the reaction by-product is filtered out by the impact. It is considered to drop from. However, the impact applied to the filter 4 when the nozzle collides with the filter 4 due to the reaction when the inert gas is injected is more than the impact when the collision member 5 collides with the filter 4 as in this embodiment. It is a very small impact. Therefore, the impact caused by the nozzle colliding with the filter 4 may not be transmitted to a wide range of the filter 4. As a result, the reaction byproduct may be removed only at the location where the nozzle collides and the location of the filter 4 in the vicinity thereof. That is, the reaction by-product may not be removed over a wide range of the filter 4. Further, the impact applied to the filter 4 when the nozzle collides with the filter 4 is an impact that can give a small vibration to the filter 4 and the reaction by-product captured by the filter 4. In some cases, reaction by-products cannot be reliably removed.

(D) After colliding the collision member 5 with the filter 4, the collision member 5 is slid with respect to at least a part of the outer peripheral surface of the filter 4, so that the impact member 5 collides with the filter 4 from the filter 4. In addition to dropping the reaction by-products, the reaction by-products can be wiped off (removed and removed) from the filter 4. That is, more reaction by-products can be removed from the filter 4. Therefore, the effect (a) can be further obtained.

(E) Also, by sliding the collision member 5, reaction by-products can be removed over a wider range of the filter 4. Therefore, the effects (a) and (d) can be obtained more.

(F) When the collision member 5 collides with the filter 4 by attaching the plate-like member 5b made of a flexible member to the rod-shaped member 5a provided in the collision member 5, the collision member 5 (plate-like member 5b) is turned into the filter 4. It can be made to collide softly. That is, the impact applied to the filter 4 when the collision member 5 collides with the filter 4 can be reduced. Thereby, the damage of the filter 4 etc. can be reduced. Further, when the collision member 5 is slid, it is easy to slide along the outer peripheral surface of the filter 4. Therefore, the effect (d) is easily obtained.

(G) By providing the slit 5c in the plate-like member 5b, the plate-like member 5b is deformed when colliding with the filter 4, and the impact applied to the filter 4 can be further reduced. Therefore, the effect (f) can be further obtained.

(H) The exhaust gas is introduced into the deposition space 10 from the introduction port 3a, and at least a part of the reaction byproducts contained in the exhaust gas is adsorbed on the inner wall of the deposition space 10, and then the exhaust gas passes through the filter 4. By doing so, the period until the filter 4 is clogged can be made longer. That is, at least a part of the reaction gas by-product contained in the exhaust gas is removed in advance in the deposition space 10, and the exhaust gas in which the content of the reaction by-product is reduced passes through the filter 4. It is possible to reduce the amount of reaction by-products trapped by. As a result, the period until the filter 4 is clogged can be made longer. Therefore, the effects (a) to (c) and the like can be further obtained.

<Other embodiments>
As mentioned above, although one Embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, A various change is possible in the range which does not deviate from the summary.

In the above-described embodiment, the plate-like member 5b has the slit 5c on the side thereof, and the plate-like member 5b is deformed when it collides with the filter 4, so that the impact applied to the filter 4 is reduced. However, the present invention is not limited to this. For example, like the collision member 5A shown in FIG. 4, the plate-like member 5 b has a wavy unevenness (wave structure) on the collision surface that collides with the filter 4, and the irregularity is deformed when colliding with the filter 4. The impact applied to the filter 4 may be reduced. That is, the plate-like member 5b may be attached to the rod-like member 5a in a wave shape by alternately passing the rod-like members 5a from the front and back surfaces of the plate-like member 5b.

As a result, when the collision member 5A collides with the filter 4, the concave and convex portion (the corrugated structure portion) is deformed (bent), so that the shock applied to the filter 4 and the collision member 5A (plate member 5b) is absorbed. The As a result, damage to the collision member 5A and the filter 4 can be reduced. Further, when the collision member 5A comes into contact with the filter 4, the projection of the concavo-convex portion is deformed so that the area of the plate-like member 5b (collision member 5A) in contact with the filter 4 is increased. Thereby, the quantity of the reaction by-product removed when sliding the collision member 5 with respect to at least one part of the outer peripheral surface of the filter 4 can be increased more.

Further, for example, a portion of the collision member 5 that collides with the filter 4 (for example, a rod-shaped member 5 a or a plate-shaped member 5 b) is deformed so as to follow the outer peripheral surface of the filter 4 when the collision member 5 collides with the filter 4. The brush part provided with hair may be formed. Thereby, the outer peripheral surface of the filter 4 can be rubbed over a wider range, and as a result, more reaction by-products can be removed from the filter 4.

Further, it is preferable that the collision member 5 is formed so that a contact area with the filter 4 becomes large when the collision member 5 collides with the filter 4. For example, it is preferable that the rod-shaped member 5a is formed so that the diameter increases from the upper side to the lower side. In addition, for example, it is preferable that the plate-like member 5b is formed so that the thickness thereof increases from the upper side to the lower side of the bar-like member 5a. Moreover, for example, it is preferable that the brush portion is formed so that the length of the hair becomes longer as it goes from the upper side to the lower side of the rod-shaped member 5a. Thereby, when sliding the collision member 5 with respect to at least one part of the outer peripheral surface of the filter 4, the wider area of the outer peripheral surface of the filter 4 can be rubbed. As a result, more reaction by-products can be removed from the filter 4. Further, when the collision member 5 collides with the filter 4, an impact can be applied over a wider range of the filter 4. Therefore, more reaction by-products can be removed from the filter 4.

In the above-described embodiment, the case where the slit 5c is formed in the plate-like member 5b has been described, but the present invention is not limited to this. That is, the slit 5c may not be formed in the plate-like member 5b.

In the above-described embodiment, the case where the collision member 5 includes the rod-like member 5a and the plate-like member 5b attached to the rod-like member 5a has been described as an example, but is not limited thereto. For example, the collision member 5 is constituted by a rod-like member 5a, and the plate-like member 5b may not be attached. Also by this, by making the collision member 5 collide with the filter 4, the reaction by-product can be dropped from the filter 4 and removed by the impact. Accordingly, the effects (a) to (c) described above can be obtained.

In the above-described embodiment, the case where the collision member 5 is slid along the circumferential direction of the filter 4 (that is, in the lateral direction) when sliding the collision member 5 with respect to at least a part of the outer peripheral surface of the filter 4 has been described. However, the present invention is not limited to this. For example, the filter 4 may be slid in the longitudinal direction (that is, the axial direction) or in the oblique direction of the filter 4.

In the above-described embodiment, the case where the collision member 5 is disposed between the

adjacent filters

4 and 4 has been described, but the present invention is not limited to this. That is, the number of filters 4, the number of collision members 5, and the location where the collision members 5 are arranged can be adjusted as appropriate. For example, when an even number (for example, six) of filters 4 are provided, three collision members 5 may be arranged in a line between the

filters

4 and 4 as shown in FIG. Also by this, when one collision member 5 swings left and right (front and rear), the collision member 5 collides with two adjacent filters 4 respectively, and the reaction by-product can be removed from the filter 4 by the impact. it can. That is, the effect (a) can be obtained. Further, even when the number of the collision members 5 is reduced as compared with the case where the collision members 5 are arranged as shown in FIG. 2 (b), the collision members 5 are arranged as shown in FIG. 2 (b). The removal efficiency of reaction by-products can be obtained to the same extent as when Moreover, the enlargement of the exhaust gas processing apparatus 1 can be suppressed.

In the above-described embodiment, the case where a pressure sensor that detects the pressure in the container 2 is used as the capture amount measurement sensor 8 has been described as an example, but the present invention is not limited thereto. For example, a sensor that measures the exhaust amount of the filtered gas discharged from the container 2 is used as the capture amount measuring sensor 8, and when the exhaust amount of the filtered gas discharged from the container 2 reaches a predetermined value, the collision member is driven by the drive mechanism. 5 may collide with the filter 4. Further, for example, the amount of traps may be indirectly measured by measuring the pressure in the reaction vessel 21. In other words, for example, a pressure sensor that measures the pressure in the reaction vessel 21 is used as the trapping amount measurement sensor 8. When the pressure in the reaction vessel 21 reaches a predetermined value, the collision member 5 is caused to collide with the filter 4 by the drive mechanism. Also good.

In the above-described embodiment, when the capture amount measured by the capture amount measurement sensor 8 reaches a predetermined value, the collision member 5 is moved by the drive mechanism to cause the collision member 5 to collide with the filter 4, but the present invention is not limited to this. For example, the collision member 5 may be caused to collide with the filter 4 by moving the collision member 5 by a driving mechanism every predetermined time or whenever the film forming process is completed. Further, for example, during the film forming process, the collision member 5 may continue to be moved by the drive mechanism, and the collision member 5 may continue to collide with the filter 4. That is, the exhaust gas treatment process and the film forming process may be performed simultaneously.

In the above-described embodiment, the case where the collision member 5 is moved manually, that is, the case where the handle 7 as the drive mechanism is manually moved has been described as an example, but the present invention is not limited to this. For example, the drive mechanism includes a servo (motor), and automatically drives the servo via the electrically connected control unit in accordance with the capture amount measured by the capture amount measurement sensor 8, and the collision member 5. May be moved automatically.

In the above-described embodiment, the case where the upper part of the filter 4 is held by the partition wall 2c has been described, but the present invention is not limited to this. For example, a filter support member that supports the filter 4 from below in the container 2 may be provided in the container 2. In this case, the filter support member may be formed in a shape such that reaction by-products falling from the filter 4 do not accumulate on the filter support member.

In the above-described embodiment, the case where a Ga melt obtained by melting solid Ga at a high temperature, for example, is used as the metal raw material 27. However, the present invention is not limited to this. As the metal raw material 27, a raw material that is liquid at room temperature may be used.

In the above-described embodiment, the case where the deposition space 10 is provided in the container 2 has been described. However, the present invention is not limited to this. That is, the deposition space 10 may not be provided in the container 2.

In the above-described embodiment, the case where the rectifying plate 11 is provided in the container 2 has been described, but is not limited thereto. That is, the current plate 11 may not be provided in the container 2.

In the above-described embodiment, the case where an HVPE apparatus is used as the substrate processing apparatus 20 has been described, but the present invention is not limited to this. That is, the present invention can be applied to various substrate processing apparatuses as long as the raw material gas reacts in the gas phase to generate dusty reaction by-products. In the above-described embodiment, the processing for forming a GaN film has been described as the substrate processing. However, the present invention is not limited to this. In addition, for example, as the substrate processing, a substrate processing apparatus that performs film formation processing, etching processing, and the like for forming various films such as an oxide film and a metal film, and the substrate processing described above are performed to manufacture the substrate 100. It can also be applied to a substrate processing apparatus.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

[Appendix 1]
According to one aspect of the invention,
An exhaust gas processing apparatus connected to a reaction vessel for processing a substrate,
A container into which exhaust gas discharged from the reaction container is introduced;
A filter provided in the container for capturing reaction by-products contained in the exhaust gas;
There is provided an exhaust gas processing apparatus comprising: a collision member that collides with the filter and removes the reaction byproduct captured by the filter from the filter by the impact.

[Appendix 2]
The exhaust gas treatment device of appendix 1, preferably,
The collision member is configured to be slidable with respect to at least a part of the outer peripheral surface of the filter after colliding with the filter.

[Appendix 3]
The exhaust gas treatment apparatus according to

appendix

1 or 2, preferably,
The collision member includes a rod-shaped member,
The rod-shaped member is configured to collide with the filter.

[Appendix 4]
The exhaust gas treatment device of appendix 3, preferably,
A plate-like member formed of a flexible member is attached to a location where the rod-like member collides with the filter.

[Appendix 5]
The exhaust gas treatment device of appendix 4, preferably,
The plate-like member has a slit on its side, and is configured to reduce an impact applied to the filter by being deformed when colliding with the filter.

[Appendix 6]
The exhaust gas treatment device according to

appendix

4 or 5, preferably,
The plate-like member has a wavy unevenness on a collision surface that collides with the filter, and is configured to reduce an impact applied to the filter by deforming the unevenness when colliding with the filter. .

[Appendix 7]
The exhaust gas treatment apparatus according to any one of appendices 1 to 6, preferably,
A brush portion having bristles that deform along the outer peripheral surface of the filter when it collides with the filter is formed at a location where the collision member collides with the filter.

[Appendix 8]
The exhaust gas treatment device according to any one of appendices 1 to 7, preferably,
The collision member is formed so as to have a large contact area with the filter when it collides with the filter.

[Appendix 9]
The exhaust gas treatment device according to any one of appendices 1 to 8, preferably,
The collision member is provided so that it can be moved from outside the container.

[Appendix 10]
The exhaust gas treatment device according to any one of appendices 1 to 9, preferably,
A capture amount measuring sensor for measuring the amount of reaction by-products captured by the filter;
When the trapping amount measured by the trapping amount measurement sensor becomes equal to or greater than a predetermined value, the drive mechanism for causing the collision member to collide with the filter is moved.

[Appendix 11]
The exhaust gas treatment device of appendix 10, preferably,
The captured amount measuring sensor is a pressure sensor that detects a pressure in the container,
When the pressure in the container reaches or exceeds a predetermined value, the drive mechanism is moved.

[Appendix 12]
According to another aspect of the invention,
A substrate processing apparatus comprising an exhaust gas processing apparatus connected to a reaction vessel for processing a substrate,
The exhaust gas treatment device comprises:
A container into which exhaust gas discharged from the reaction container is introduced;
A filter provided in the container for capturing reaction by-products contained in the exhaust gas;
There is provided a substrate processing apparatus comprising: a collision member that collides with the filter and removes the reaction byproduct captured by the filter from the filter by the impact.

[Appendix 13]
According to yet another aspect of the invention,
Introducing an exhaust gas into the container from a reaction container for processing the substrate;
Allowing the filter to capture reaction by-products contained in the exhaust gas by passing the exhaust gas through a filter provided in the container; and
And a step of causing a collision member to collide with the filter and removing the reaction by-product trapped by the filter from the filter by the impact.

DESCRIPTION OF SYMBOLS 1 Exhaust-gas processing apparatus 2 Container 4 Filter 5 Collision member 21 Reaction container 100 Substrate

Claims

An exhaust gas processing apparatus connected to a reaction vessel for processing a substrate,
A container into which exhaust gas discharged from the reaction container is introduced;
A filter provided in the container for capturing reaction by-products contained in the exhaust gas;
An exhaust gas processing apparatus comprising: a collision member that collides with the filter and removes the reaction byproduct captured by the filter from the filter by the impact.
The exhaust gas processing apparatus according to claim 1, wherein the collision member is configured to be slidable with respect to at least a part of an outer peripheral surface of the filter after colliding with the filter.
The collision member includes a rod-shaped member,
The exhaust gas treatment device according to claim 1 or 2, wherein the exhaust gas treatment device is configured to cause the rod-shaped member to collide with the filter.
The exhaust gas processing apparatus according to claim 3, wherein a plate-like member formed of a flexible member is attached to a portion of the rod-like member that collides with the filter.
The exhaust gas treatment according to claim 4, wherein the plate-like member has a slit on a side portion thereof, and is configured to reduce an impact applied to the filter by being deformed when colliding with the filter. apparatus.
The plate-like member has a wavy unevenness on a collision surface that collides with the filter, and is configured to reduce an impact applied to the filter by deforming the unevenness when colliding with the filter. The exhaust gas treatment device according to claim 4 or 5.
The brush part provided with the hair | bristle which deform | transforms into the said filter along an outer peripheral surface when it collides with the said filter is formed in the location which collides with the said filter of the said collision member. The exhaust gas processing apparatus as described.
The exhaust gas processing apparatus according to any one of claims 1 to 7, wherein the collision member is provided so as to be movable from outside the container.
A capture amount measuring sensor for measuring the amount of reaction by-products captured by the filter;
The exhaust gas processing device according to any one of claims 1 to 8, wherein when a trapped amount measured by the trapped amount measurement sensor becomes equal to or greater than a predetermined value, a drive mechanism that causes the collision member to collide with the filter is moved.
A substrate processing apparatus comprising an exhaust gas processing apparatus connected to a reaction vessel for processing a substrate,
The exhaust gas treatment device comprises:
A container into which exhaust gas discharged from the reaction container is introduced;
A filter provided in the container for capturing reaction by-products contained in the exhaust gas;
A substrate processing apparatus comprising: a collision member that collides with the filter and removes the reaction byproduct captured by the filter from the filter by the impact.