WO2016107975A1 - Transducteur micro-électromécanique piézoélectrique - Google Patents

Transducteur micro-électromécanique piézoélectrique Download PDF

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Publication number
WO2016107975A1
WO2016107975A1 PCT/FI2015/050914 FI2015050914W WO2016107975A1 WO 2016107975 A1 WO2016107975 A1 WO 2016107975A1 FI 2015050914 W FI2015050914 W FI 2015050914W WO 2016107975 A1 WO2016107975 A1 WO 2016107975A1
Authority
WO
WIPO (PCT)
Prior art keywords
membrane
piezoelectric
actuators
piezoelectric actuators
transducer
Prior art date
Application number
PCT/FI2015/050914
Other languages
English (en)
Inventor
Bin Guo
James R. DEKKER
Sergey GORELICK
Original Assignee
Teknologian Tutkimuskeskus Vtt Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknologian Tutkimuskeskus Vtt Oy filed Critical Teknologian Tutkimuskeskus Vtt Oy
Publication of WO2016107975A1 publication Critical patent/WO2016107975A1/fr

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • MEMS microelectromechanical systems
  • electromechanical transducers particularly, however not exclusively, the invention pertains to electromechanical transducers.
  • MEMS devices and manufacturing techniques are widely used in various different applications.
  • MEMS structures allow for even smaller devices with mechanical and electric properties, which is convenient since there is a growing trend in electronics towards smaller and more efficient solutions.
  • hearing aid and small speaker solutions rely predominantly on miniaturized electromechanical coils which makes it difficult to manufacture these on a micro scale. Further on, it is very hard to achieve high acoustic performance with such miniaturized devices. Consequently they require amplification and often digital to analog conversion (DAC), which further leads to greater power consumption, less compact and more complicated and expensive systems..
  • DAC digital to analog conversion
  • CMOS- MEMS speakers solutions used in digital sound reconstruction need high driving voltage (e.g. 40V) and show bipolar response (i.e. there are both positive and negative peaks in a single output pressure pulse).
  • driving voltage e.g. 40V
  • bipolar response i.e. there are both positive and negative peaks in a single output pressure pulse.
  • the response time of a CMOS-MEMS speaker is long (i.e. 250 ⁇ 8).
  • digital sound reconstructing speaker solutions that are electrostatic suffer from high driving voltage and the pull-in problem.
  • array-based digital MEMS speakers suffer from high distortion due to speaker non-uniformity and phase cancellation. All the above mentioned limitations significantly lower the performance of the previous reported digital sound reconstructing MEMS speakers.
  • the objective of the embodiments of the present invention is to at least alleviate one or more of the aforementioned drawbacks evident in the prior art arrangements particularly in the context of MEMS transducers and electroacoustic solutions.
  • the objective is generally achieved with a device and a method according to the claims in accordance with the present invention.
  • One of the advantageous features of the present invention is that it omits the use of digital to analog conversion and consequently analog amplification by actuating the membrane directly with digital signals.
  • a linear and analog-type membrane movement can thus be achieved without a digital- to-analog converter (DAC) and analog amplifier.
  • DAC digital- to-analog converter
  • This is especially beneficial when the membrane is used to produce sound and allows for digital sound reconstruction.
  • the solution may be seen to act as an electromechanical DAC.
  • the present solution has the advantage of overcoming the intrinsic nonlinear and bipolar response of such existing solutions by utilizing the digital actuation.
  • One of the further advantageous features of the present invention is that by using piezoelectric actuation the driving voltage may be kept low.
  • Other benefits of the present invention include improved frequency response.
  • the proposed digital MEMS speaker features more predictable and controllable performance than the prior arts, while keeping low power consumption.
  • the present solution gains advantageously from that it may be produced in the wafer and integrated circuit (IC) manufacturing foundries.
  • MEMS technology also benefits from high accuracy patterning and structuring by semiconductor mass production facilities, which is thus ideal for fabricating micro speakers with small form factors and ultra-low power consumptions.
  • speakers based on piezoelectric or electrostatic actuation offers the IC-compatible process and thus the possibility for integration with electronics (driving, signal processing and wireless communication).
  • this integration with electronics can be achieved in a wafer scale thanks to the full compatibility of the process and the mature enabling technologies such as through- silicon via (TSV) and wafer bonding.
  • TSV through- silicon via
  • the electrodes 108, 1 12 are connected to each of the piezoelectric actua- tors 1 10.
  • Each piezoelectric actuator has a first electrode 108 and a second electrode 1 12. This allows for controlling the piezoelectric actuators 1 10 individually or consequently as groups of actuators 1 10 to actuate the membrane 106.
  • Both of the electrodes 108, 1 12 are used essentially to conduct digital signals to, or analog signals from, the piezoelectric actua- tors 1 10.
  • the overall structure of the piezoelectric MEMS transducer 100 may comprise recesses 1 14 in the substrate 102, either of the electrically isolating layers 104a, 104b, and/or membrane 106. However, at least such re- cess(es) 1 14 exist that the membrane 106 may move in accordance to the preferred properties of the transducer. This may include a number of venting holes from the recess(es) and out of the structure to enable i.a. pressure stabilization in the recess(es).
  • the piezoelectric actuators 310 are arranged to produce center actuation. In other words, the piezoelectric actuators 310 reside essentially closer to the center than the edge of the membrane 306 (and the isolating layer 304b) (horizontally when viewed from this perspective). However, even though not explicitly illustrated, the piezoelectric actuators 310 may be arranged to produce actuation essentially in any location on the membrane 306. In other words, the piezoelectric actuators 310 may reside in preferred locations closer to the center, closer to the edge or somewhere in between these locations on the membrane 306 horizontally when viewed from this perspective. The piezoelectric actuators 310 may be also in different actuation positions, such as in an asymmetric manner, in relation to each other.
  • the total number of piezoelectric actuators 402a, 402b, 402c, 402d as well as the number of piezoelectric actuators 402a, 402b, 402c, 402d used to pertain to unit bit values and bit values depends on many aspects, such as the piezoelectric actuator mechanical functioning, number bits needed and the overall size of the piezoelectric MEMS transducer 400 structure.
  • group and its plural form “groups” which are used to refer to the number of actuators 402a, 402b, 402c, 402d assimilated or pertaining to unit bit values, bit values and binary values are not limiting in a physical sense, i.e. there doesn't necessarily exist any (physical) relation be- tween actuators 402a, 402b, 402c, 402d of a group.
  • the group is used as a more of a figurative manner to express that actually a number of actuators 402a, 402b, 402c, 402d are used to produce another bit value. Determining the groups is as such more of a configuration and controlling matter than actual manufacturing result or actual device structure property.
  • electroacoustic applications gain from at least 8-bit digital sound reconstruction.
  • different transducer 400 applications may require different bit control, which again is a matter of design in relation to the specific application.
  • digital sound reconstruction the transducer is working in a digital "on-of ' mode and the actuators 402a, 402b, 402c, 402d are either actuated or not with a digital signal.
  • the piezoelectric actuators may be used for calibration of the transducer, i.e. the bending action, flatness, stress and actuation properties of the membrane. At least one or more of said plural piezoelectric actuators can be used for sensing the bending (and or the stress and flatness) of the membrane. At least one or more of said plural piezoelectric actuators can be used to adjust the bending (and or the stress and flatness) of the membrane. Further on, at least one or more of said plural piezoelectric ac- tuators can be used for sensing the deflection of the membrane and functioning as a pressure or acoustic sensor/receiver. The acoustic sensing may be used to give directionality information of the source.
  • the MEMS transducer 400 structure may be also such that it comprises separated membranes: the one membrane being separated or having at least two individual membranes in the structure. This is advantageous from the perspective of for example having two drivers (driven with dif- ferent clock frequencies, such as tweeters: 44.1kHz and woofer: 1 1kHz) in the one overall piezoelectric MEMS transducer 400. Obviously recesses may be made such in these embodiments e.g. that separate drivers have separate resonant cavities, etc. According to an example, the membrane preferably works under DC driving condition, i.e. the working frequency f is much lower than the resonance frequency fO:
  • the post-resonance response is much smaller than the DC response
  • the working frequency f can be set to be 44.1kHz (i.e. CD audio);
  • the resonance frequency fO is designed to be > 80-100kHz.
  • FIG. 5 illustrates an embodiment of a system 500 comprising a piezoelectric MEMS transducer 502 in accordance with the present invention.
  • the system 500 may comprise a driver 504, signal processing, communication or remote control unit 506 and/or a directional microphone 508.
  • a substrate is produced.
  • the substrate may be pre- formed to a desired shape, such as to comprise the designed shape and/or recesses of the final structure.
  • the substrate may be preconditioned to allow for the manufacturing or attachment of the other elements and structures to the substrate. Recess and cavities may be preformed in the substrate. Further on, these cavities may include porous Si.
  • CMOS circuit may also be formed on the substrate.
  • the substrate may be manufactured and/or constitute a part of a larger wafer constituting essentially an area such as to allow for microfabrication, MEMS fabrication and wafer fabrication thereon, from which it may be diced. However, other means of manufacturing on said substrate are possible as well as having the substrate as an individual die.
  • at least one (first) electrically isolating layer is produced to a preferred location on the substrate.
  • the isolating layer is produced such that it at least separates the substrate from a membrane. Obviously this may be accomplished by many means and depends on the design of the overall structure of the MEMS transducer.
  • the electrically isolating layer may completely cover a one face of the substrate's structure or a part of it e.g. essentially the area whereupon a membrane is produced.
  • a membrane is produced. The membrane is preferably produced essentially directly to the substrate by deposition and preferably such that the electrically isolating layer separates the membrane and substrate.
  • the membrane can also be the Si layer of a SOI wafer.
  • the substrate, the membrane and the electrically isolating layer are obtained together as a starting wafer.
  • SOI wafer can be formed by deposition or by bonding and thinning.
  • the membrane is chosen in accordance to the shape and form factor re- quired from the overall MEMS transducer structure. This may be determined in accordance to the properties required from the transducer. For example, an electroacoustic structure requires different properties from a mirror or mechanical actuation solution, such as a jet pump.
  • the membrane may undergo microfabrication to be formed or produce structures. The microfabrication may comprise inter alia doping of the membrane, forming the membrane to a desired shape, optionally with recesses therein, such as by etching.
  • at least one other (second) electrically isolating layer is produced to a preferred location on the substrate. Preferably, the isolating layer is produced such that it at least separates the membrane from the electrodes.
  • the electrically isolating layer may completely cover a one face of the membrane's structure or a part of it e.g. essentially the area whereupon electrodes/or and piezoelectric actuators are produced.
  • a number of (bottom) electrodes are produced on the (second) isolating layer.
  • the (bottom) electrodes for each piezoelectric actuator may be produced by forming a conductive plate as a one layer that is later separated into (e.g. trench) isolated sections of (bottom) electrodes.
  • the electrodes may be produced individually.
  • the conductive plate and/or electrodes may be produced by deposition or printing but other means known in the state of art may also be used.
  • the conductive plate may be further any desired size or shape preferably in accordance to the shape and locations of the piezoelectric actuators.
  • the conductive plate may further on act as a growth seed layer and a bottom electrode for the piezoelectric actuators.
  • piezoelectric actuators are produced on the membrane and option- ally (directly) on the electrodes (or the conductive plate) on the isolating layer.
  • the piezoelectric actuators may be produced on essentially on the same side of the membrane or to essentially opposite sides of the membrane.
  • the piezoelectric actuators may be laid on the membrane (or on the conductive plate) as premanufactured units or they may be manufactured directly on the membrane by deposition or printing. They may be produced by first making as an essentially single layer on the conductive plate(s) that is then divided into individual actuators of preferred size and shape.
  • (top) electrodes are produced on the piezoelectric actuators.
  • Each piezoelectric actuator needs to have an electrode such that it may be actuated. They may be produced by deposition or printing but other means known in the state of art may also be used.
  • the electrodes are preferably produced on the top side of each piezoelec- trie actuator although other locations are also feasible. However, the face with largest area is preferred since the size of the electrode also affects the functioning of a piezoelectric actuators on which it is attached.
  • recesses are formed to the structure such as that the preferred overall design of the MEMS transducer is attained.
  • many different options for the recesses exist of which many depend on the desired properties of the structure.
  • at least one recess must be formed such that the membrane may move about at least in either direction perpendicular to the initial state of the membrane.
  • the recess may hence be formed to the substrate, electrically isolating layer, conductive layer, membrane or a combination of these such that there exists a recess at some point in between the substrate and the membrane.
  • this recess may exist in any of the aforementioned or a combination of them as any desired shape.
  • the shape of the recess is such that the membrane may move about as much as desired, i.e. as much as is wanted to produce by the actuation of the piezoelectric actuation.
  • the recess or any additional recesses are made to improve other properties of the overall structure, such as the me- chanical properties and form factor of the membrane enabling for example different actuation as a function of the membrane's shape.
  • the recess and cavities may be preformed in the substrate and these cavities may include porous Si.
  • one or more vent holes for the recess(es) are formed constituting e.g. a cavity from the bigger recess for the membrane out of the structure such as to allow for a fluid to flow through it e.g. as an effect of the membrane actuation and movement.
  • the vent holes and the cavity may be designed to optimize the acoustic performance of the membrane.
  • Recesses may be attained by for example etching but other means known in the state of art may also be used, for example, SOI wafers with pre- etched cavities beneath the device layer, e.g., Cavity-SOI or CSOI, which essentially includes forming recesses into the insulating layer and or the substrate and attach a single crystal Si membrane above the cavity
  • Recess may also be formed by release etch of at least one sacrificial material (e.t. oxide) below the membrane. Such release etch may be performed through some holes formed into the membrane, or from the substrate.
  • sacrificial material e.t. oxide
  • the overall structure of the MEMS transducer may be added the conductors, such as by TSV or wafer bonding means. Additionally insulating layers and structures may be added as well as other desired finishes such as wafers or chips containing CMOS circuits, overlays or structures. Lithography and further etching may be done to form structures and isolators. Additionally, the MEMS transducer may be tested, packaged and/or integrated to another device such as a (micro)processor or digital signal processor (DSP) and config- ured.
  • a (micro)processor or digital signal processor (DSP) digital signal processor

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Micromachines (AREA)

Abstract

Cette invention concerne un transducteur micro-électromécanique piézoélectrique, comprenant un substrat, au moins une membrane, au moins une couche électriquement isolante entre la membrane et le substrat, une pluralité d'actionneurs piézo-électriques agencés sur la membrane, au moins une couche électriquement isolante entre la membrane et les actionneurs piézoélectriques, des électrodes pour la commande électrique de chacun des actionneurs piézoélectriques. La structure comprend en outre au moins un évidement formé dans le substrat, une couche électriquement isolante entre la membrane et le substrat et/ou sur la membrane afin de libérer la membrane pour son déplacement. Le transducteur est en outre conçu pour recevoir des signaux numériques afin de commander les actionneurs piézo-électriques par l'intermédiaire des électrodes pour convertir les signaux en l'actionnement mécanique des actionneurs et par conséquent en l'actionnement de la membrane, lesdits actionneurs étant en outre conçus pour être commandés en tant que groupes se rapportant à des valeurs binaires. L'invention concerne en outre des systèmes et des procédés correspondants.
PCT/FI2015/050914 2014-12-31 2015-12-21 Transducteur micro-électromécanique piézoélectrique WO2016107975A1 (fr)

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FI20146176 2014-12-31
FI20146176 2014-12-31

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160269827A1 (en) * 2015-03-02 2016-09-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Device with actuated membranes and a digital loudspeaker including the device thereof
CN110603817A (zh) * 2017-05-09 2019-12-20 富士胶片株式会社 压电麦克风芯片及压电麦克风
US20200059721A1 (en) * 2018-08-19 2020-02-20 xMEMS Labs, Inc. Method for manufacturing air pulse generating element
CN111669690A (zh) * 2020-07-10 2020-09-15 瑞声科技（南京）有限公司 一种压电式麦克风及其制备工艺
US10805751B1 (en) 2019-09-08 2020-10-13 xMEMS Labs, Inc. Sound producing device
US11057716B1 (en) 2019-12-27 2021-07-06 xMEMS Labs, Inc. Sound producing device
US20210352413A1 (en) * 2018-10-23 2021-11-11 Tdk Electronics Ag Sound Transducer and Method for Operating the Sound Transducer
US11252511B2 (en) 2019-12-27 2022-02-15 xMEMS Labs, Inc. Package structure and methods of manufacturing sound producing chip, forming package structure and forming sound producing apparatus
US11730451B2 (en) 2018-03-22 2023-08-22 Exo Imaging, Inc. Integrated ultrasonic transducers

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JP2011182298A (ja) * 2010-03-03 2011-09-15 Yamaha Corp Ｍｅｍｓトランスデューサおよび超音波パラメトリックアレイスピーカー。
US20120087522A1 (en) * 2010-10-08 2012-04-12 Samsung Electronics Co., Ltd. Piezoelectric microspeaker and method of fabricating the same
US20130294636A1 (en) * 2012-05-07 2013-11-07 Commissariat A L'energie Atomique Et Aux Ene Alt Digital loudspeaker with enhanced performance
US20140177881A1 (en) * 2012-12-20 2014-06-26 Commissariat A L'energie Atomique Et Aux Ene Alt Device with a controlled displacement membrane

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US20110051985A1 (en) * 2009-08-31 2011-03-03 Samsung Electronics Co., Ltd. Piezoelectric micro speaker having piston diaphragm and method of manufacturing the same
JP2011182298A (ja) * 2010-03-03 2011-09-15 Yamaha Corp Ｍｅｍｓトランスデューサおよび超音波パラメトリックアレイスピーカー。
US20120087522A1 (en) * 2010-10-08 2012-04-12 Samsung Electronics Co., Ltd. Piezoelectric microspeaker and method of fabricating the same
US20130294636A1 (en) * 2012-05-07 2013-11-07 Commissariat A L'energie Atomique Et Aux Ene Alt Digital loudspeaker with enhanced performance
US20140177881A1 (en) * 2012-12-20 2014-06-26 Commissariat A L'energie Atomique Et Aux Ene Alt Device with a controlled displacement membrane

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160269827A1 (en) * 2015-03-02 2016-09-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Device with actuated membranes and a digital loudspeaker including the device thereof
US10149054B2 (en) * 2015-03-02 2018-12-04 Commissariat à l'énergie atomique et aux énergies alternatives Operable membranes device and digital speaker comprising at least one such device
CN110603817A (zh) * 2017-05-09 2019-12-20 富士胶片株式会社 压电麦克风芯片及压电麦克风
EP3624464A4 (fr) * 2017-05-09 2020-04-01 FUJIFILM Corporation Puce de microphone piézoélectrique et microphone piézoélectrique
CN110603817B (zh) * 2017-05-09 2020-08-25 富士胶片株式会社 压电麦克风芯片及压电麦克风
US11477580B2 (en) 2017-05-09 2022-10-18 Fujifilm Corporation Piezoelectric microphone chip and piezoelectric microphone
US11730451B2 (en) 2018-03-22 2023-08-22 Exo Imaging, Inc. Integrated ultrasonic transducers
US20200059721A1 (en) * 2018-08-19 2020-02-20 xMEMS Labs, Inc. Method for manufacturing air pulse generating element
CN110839199A (zh) * 2018-08-19 2020-02-25 知微电子有限公司 制作空气脉冲产生元件的方法
EP3614372A1 (fr) * 2018-08-19 2020-02-26 Xmems Labs, Inc. Procédé de fabrication d'un élément de production d'impulsion d'air
US10771891B2 (en) 2018-08-19 2020-09-08 xMEMS Labs, Inc. Method for manufacturing air pulse generating element
US20210352413A1 (en) * 2018-10-23 2021-11-11 Tdk Electronics Ag Sound Transducer and Method for Operating the Sound Transducer
US11601762B2 (en) * 2018-10-23 2023-03-07 Tdk Electronics Ag Sound transducer and method for operating the sound transducer
EP3790288A1 (fr) * 2019-09-08 2021-03-10 xMEMS Labs, Inc. Dispositif de production sonore
CN112468945A (zh) * 2019-09-08 2021-03-09 知微电子有限公司 发声装置
US10805751B1 (en) 2019-09-08 2020-10-13 xMEMS Labs, Inc. Sound producing device
US11057716B1 (en) 2019-12-27 2021-07-06 xMEMS Labs, Inc. Sound producing device
KR20210086439A (ko) * 2019-12-27 2021-07-08 엑스멤스 랩스 인코포레이티드 음향 재생 기기
KR102335666B1 (ko) * 2019-12-27 2021-12-06 엑스멤스 랩스 인코포레이티드 음향 재생 기기
US11252511B2 (en) 2019-12-27 2022-02-15 xMEMS Labs, Inc. Package structure and methods of manufacturing sound producing chip, forming package structure and forming sound producing apparatus
CN111669690A (zh) * 2020-07-10 2020-09-15 瑞声科技（南京）有限公司 一种压电式麦克风及其制备工艺

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