WO2016100538A1 - Bulk direct gap mos2 by plasma induced layer decoupling - Google Patents

Bulk direct gap mos2 by plasma induced layer decoupling Download PDF

Info

Publication number
WO2016100538A1
WO2016100538A1 PCT/US2015/066139 US2015066139W WO2016100538A1 WO 2016100538 A1 WO2016100538 A1 WO 2016100538A1 US 2015066139 W US2015066139 W US 2015066139W WO 2016100538 A1 WO2016100538 A1 WO 2016100538A1
Authority
WO
WIPO (PCT)
Prior art keywords
tmdc
bulk
plasma
plasma exposure
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2015/066139
Other languages
French (fr)
Inventor
Stephen B. Cronin
Rohan DHALL
Roger Lake
Zhen Li
Mahesh NEUPANE
Darshana WICKRAMARATNE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Southern California USC
University of California Berkeley
University of California San Diego UCSD
Original Assignee
University of Southern California USC
University of California Berkeley
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Southern California USC, University of California Berkeley, University of California San Diego UCSD filed Critical University of Southern California USC
Priority to US15/536,628 priority Critical patent/US10680403B2/en
Publication of WO2016100538A1 publication Critical patent/WO2016100538A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G39/00—Compounds of molybdenum
    • C01G39/06—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G41/00—Compounds of tungsten
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/28—Solid content in solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • This disclosure relates to bulk direct transition metal dichalcogenides (TMDCs).
  • Transition metal dichalcogenides such as M0S 2 , WS 2 , and WSe 2 , on the other hand, are found to exist in similar layered structures and exhibit finite band gaps in the visible wavelength range [Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano, Nature Nanotechnology 2012, 7, 699; M.
  • TMDCs have traditionally been used as lubricants and host materials for intercalation compounds [M. Dresselhaus, MRS Bulletin 1987, 12, 24; S. M.
  • TMDCs may vary significantly with layer thickness [K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Physical Review Letters 2010, 105, 136805]. While monolayer M0S 2 and WSe 2 are direct band gap materials, their few layer counterparts are indirect semiconductors, which show a greatly suppressed photoluminescence(PL) [K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz,
  • TMDC Bulk direct transition metal dichalcogenide
  • the TMDC may have an increased interlayer separation of at least .5, 1 , or 3 angstroms more than its bulk value.
  • the TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe 2 ).
  • Oxygen may be between the interlayers.
  • a device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a
  • thermoelectric generator or a thermoelectric cooler.
  • a method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma.
  • the plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.
  • FIG. 1 illustrates an optical microscope image of a few layer M0S2 flake (a) before and (b) after 3 minutes of oxygen plasma treatment.
  • FIG. 1 (C) illustrates photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A exciton, the narrowing of the spectral linewidth, and the emergence of the asymmetry in PL lineshape after plasma treatment at 300K.
  • FIG. 1 (d) is an inset that shows the emergence of a distinct, low energy peak at 100K. The relative intensity of the low energy PL peak is shown as a function of temperature.
  • FIG. 2 illustrates AFM (height) images of a MoS 2 flake taken (a) before and (b) after a 3 minute oxygen plasma treatment (Plotted on different color scales). The step height profiles along the dashed lines are shown in (c). A significant increase in sample thickness, of about 2nm, is observed after plasma treatment.
  • FIG. 3 illustrates an optical microscope image of a few layer M0S2 flake (a) before and (b) after 3 minutes of oxygen plasma treatment.
  • FIG. 1 (C) illustrates Raman spectra before and after plasma treatment. No significant shift in the Raman peaks is observed, although the Raman intensity for both peaks is reduced, and a slight narrowing of the peaks is observed.
  • FIG. 4(a) illustrates atomistic structure of the 4L- MoS 2 with the equilibrium vdW gap, d vc iw, and the modified vdW gap, d vc iw (new).
  • FIG. 4(b) illustrates direct gap (solid) and indirect gap (dotted) energy transitions for 2L, 3L and 4L M0S2 for a range of increases in the vdW gap ( d vdvJ ).
  • the dotted vertical lines indicate the indirect to direct transition vdW gaps for 2L (green), 3L (blue), and 4L (red) MoS 2 .
  • FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma treatment for 35 M0S2 flakes measured in this study.
  • FIG. 6 is a table of Raman scattering peak position and width for the E 1 2 g and Ai g Raman modes for 17 flakes measured before and after optimized oxygen plasma treatment.
  • FIG. 7 illustrates AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of M0S2 indicating a significant reduction in the surface residue due to plasma cleaning.
  • FIG. 8 shows the increase in flake thickness for 12 different many-layer M0S2 flakes.
  • FIG. 9 illustrates correlation of the observed PL enhancement with the relative increase in interlayer separation (Ah/h) showing trend lines corresponding to two types of samples with uniformly intercalated layers (blue) and top-layer only intercalation (red).
  • FIGS. 10(a) and 10(b) illustrate the structural quality of the flake was confirmed using high resolution imaging and electron diffraction at 200kV.
  • FIG. 10(c) illustrates an electron diffraction pattern.
  • FIG. 10(d) illustrates an EELS spectrum.
  • FIG. 10(e) illustrates the shift of the plasmon loss peak is plotted as a function of the oxygen plasma exposure time.
  • Gas phase treatment of M0S2 with oxygen radicals generated in an upstream N2-O2 plasma may enhance the photoluminescence (PL) of many-layer, mechanically exfoliated M0S2 flakes by up to 20 times, without reducing the layer thickness of the material.
  • a blue shift in the photoluminescence spectra and narrowing of linewidth may be consistent with a transition of M0S2 from indirect to direct band gap material.
  • Atomic force microscopy and Raman spectra reveal that the flake thickness may actually increase as a result of the plasma treatment, indicating an increase in the interlayer separation in MoS 2 .
  • a gentle oxygen plasma treatment may produce a direct band gap transition in many-layer MoS 2 .
  • the band structure of M0S 2 with more than 4 layers in thickness is almost identical to that of bulk MoS 2 , and flakes thicker than that are considered "many-layer" in this disclosure.
  • the data gathered was obtained from samples with thicknesses up to 15 layers (approximately 12nm), and approximately 5-15pm in size. This transition was studied using
  • remote plasma has been used to selectively etch away metallic carbon nanotubes and surface contaminants, to enable fabrication of semiconducting single wall carbon nanotube field effect transistors [G. Zhang, P. Qi, X. Wang, Y. Lu, X. Li, R. Tu, S. Bangsaruntip, D. Mann, L. Zhang, H. Dai, Science 2006, 314, 974].
  • An XEI Evactron Soft Clean plasma cleaner may be used, in which the plasma is generated by flowing room air past an electrode supplied with 20W of RF power at 200mTorr. The sample is placed a certain distance (6-10cm) away from the plasma source, and ionized oxygen atoms diffuse towards the sample chamber with low kinetic energies. Samples were exposed to the O 2 plasma for about 3 minutes. While typical plasma cleaners used in semiconductor fabrication operate using a "sputtering" mechanism, wherein the sample is bombarded with ions carrying significant kinetic energy, remote plasma cleaners rely mainly on the chemical reactivity of the ionized oxygen to remove surface contaminants. Despite the presence of nitrogen in the gas mixture, the plasma itself mainly consists of oxygen radicals, since the N 2 molecule has a much higher bonding energy.
  • FIGS. 1 (a) and 1 (b) show optical microscope image of a mechanically exfoliated flake of MoS 2 on an oxidized silicon wafer.
  • the photoluminescence (PL) spectra of these flakes are obtained using a 532nm excitation laser focused to a ⁇ . ⁇ spot, attenuated in power to 10pW/pm 2 , to minimize sample heating.
  • the PL spectra of the same M0S2 flake taken before and after three minutes of oxygen plasma treatment are shown in FIG. 1 (C).
  • the two peaks labeled A and B correspond to transitions between the conduction band and the two (spin-orbit split) valence bands at the K point in the Brillouin zone.
  • FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma treatment for 35 M0S2 flakes measured in this study. Enhanced PL intensities were observed for 32 out of 35 many-layer M0S2 flakes tested, indicating this method is robust and scalable.
  • the large intensity enhancement and blueshift of the PL peak observed after oxygen treatment is not the result of a reduction in the layer thickness of the M0S2, as shown by AFM and Raman measurements.
  • the AFM images taken before and after oxygen treatment reveal an increase in flake thickness, as shown in Figure 2c.
  • the error in height measurements can be estimated from the standard deviation of the measured profile on the underlying Si0 2 substrate, which is found to be 2.4A both before and after plasma treatment.
  • the step height along the white dashed lines in FIGS. 2a and 2b increases by about 20 ⁇ 5A due to the treatment with oxygen plasma.
  • vdW van-der-Waals
  • Density functional theory calculations described below show that this increased interlayer distance is sufficient to cause an indirect to direct band gap transition suggesting that the enhanced PL observed is the result of plasma-assisted layer decoupling of the MoS 2 lattice.
  • Raman spectra taken before and after oxygen treatment also indicate that no thinning of the sample is occurring. In FIG.
  • the Raman spectra of an MoS 2 flake exhibit two peaks corresponding to the E 1 2g (in plane) and A g (out of plane) vibrational modes [C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, S. Ryu, ACS Nano 2010, 4, 2695].
  • the separation between these two peaks provides a good measure of the layer thickness of the material, varying from 19cm "1 for monolayer to 25cm "1 for N-layer (N>6) MoS 2 [C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, S. Ryu, ACS Nano 2010, 4, 2695].
  • a plane-wave basis kinetic energy cutoff of 300 eV was used.
  • the lattice constants for the bilayer and trilayer structures are obtained from our prior calculations on the bulk structure of M0S2 that have been optimized with vdW interactions accounted for using a semi-empirical correction to the Kohn-Sham energies [D. Wickramaratne, F. Zahid, R. K. Lake, The Journal of Chemical Physics 2014, 140, 124710].
  • a vacuum spacing of 15 A is added along the z-axis for all the structures.
  • the atomic coordinates for each structure were optimized in all directions using the DFT-D2 dispersion corrections [S. Grimme, Journal of Computational Chemistry 2006, 27, 1787] until all the interatomic forces are below 0.01 eV/A.
  • the default level of theory in all calculations is HSE with spin-orbit coupling. Only deviations from the defaults are noted.
  • the equilibrium vdW gap, d vc iw, is 3.12A for the 2L, 3L and 4L MoS 2 structures.
  • the valence band edge, ⁇ ⁇ is composed of 28% p z orbitals from the S atoms and 67% d z 2 orbitals from Mo atoms.
  • the valence bands at K v contain no d z 2 or Pz components and are primarily composed of d x 2 , and dxy orbitals. Because of the large p z orbital component of the S atoms, the ⁇ ⁇ valley has the largest interlayer coupling and is, therefore, most sensitive to the presence of adjacent layers. When two monolayers are brought together, the ⁇ ⁇ valleys of the two layers couple and split. At the equilibrium interlayer distance of 3.12A, the energy splitting is 620 meV.
  • the corresponding energy splitting at K v due to interlayer coupling is 74 meV.
  • the interlayer coupling causes the ⁇ ⁇ valley to rise above the K v valley as two monolayers are brought into close proximity.
  • the orbital composition of the conduction band at K c is 67% d z 2 with no Pz component.
  • the next closest conduction band valley is at ⁇ c composed of 36% d z 2 and a minor contribution from the p z orbitals of the S atoms.
  • the conduction band at K c has no p z components from the sulfur atoms.
  • the K c valley is only weakly affected by the proximity of an adjacent layer, and as two monolayers are brought together, the conduction band remains at K c for the 2L, 3L and 4L structures.
  • the energy of ⁇ ⁇ decreases by 470 meV with respect to the vacuum energy.
  • the K v -K c direct gap transition changes by only 2 meV.
  • a crossover from an indirect to direct gap transition occurs when the equilibrium vdW gap in 2L, 3L, and 4L M0S2 is increased by 1 .0 A, 1 .13 A, and 1 .45 A, respectively. At these separation distances the direct gap and indirect gap energies are equal. With further increases in the vdW gap the band gap becomes direct.
  • the direct gap K v -K c and the indirect gap ⁇ ⁇ - ⁇ 0 band gap energies calculated using DFT are illustrated for the 2L ,3L, and 4L structures in FIG. 4b. The calculated increases in the vdW gaps that produce the indirect to direct transition are consistent with the experimentally measured increase in the film thickness shown in FIG. 2(C).
  • the guest species may cover only a fraction of the area in any one interlayer gap, leaving the host atomic layers weakly bound to one another. It would be expected, that completely saturating the interlayer spaces with guest species would lead to complete exfoliation of MoS 2 . Overexposure of M0S2 flakes to the plasma treatment may sometimes leads to complete removal of the flakes. However, unlike previous liquid based exfoliation methods, by controlling the plasma treatment parameters, only partial coverage of the interlayer spaces may be ensured, and hence prevent complete exfoliation.
  • FIG. 8 shows the increase in flake thickness for 12 different many-layer MoS 2 flakes. 1 1 out of 12 flakes show an increase in the thickness after plasma treatment. 10 of these 12 samples showed an increase in the PL intensity.
  • FIG. 9 shows the PL enhancement factor plotted as a function of the change in flake thickness for these 10 samples.
  • FIGS. 7(a) and 7(b) Another aspect of the oxygen plasma treatment, evident from the AFM images in FIGS. 7(a) and 7(b), is the dramatic reduction in surface contaminants arising from lithographic and exfoliation residues, which is expected to contribute to the dramatic increase in PL efficiency shown in FIG. 1 (C).
  • the plasma cleaning treatment also leads to a consistent narrowing of the PL linewidth, as evident in FIG. 1 C. While the intensity of the A exciton luminescence is greatly enhanced, the intensity of the B exciton is actually diminished. This is also to be expected, since optically generated higher energy (B) excitons, due to their increased lifetimes, now have more time to find a decay path to the more energetically favorable (A) state before radiative recombination.
  • B optically generated higher energy
  • the lineshape of the observed luminescence from the A exciton is found to be asymmetric, with a significant shift of the spectral weight towards the low energy side, as shown in FIG. 1 C. This apparent asymmetry is the result of the emergence of a peak near the low energy shoulder of the A excitonic peak.
  • FIG. 1 d shows the relative intensity of this low energy A d peak to the dominant A exciton peak, as a function of sample temperature.
  • FIG. 10(a-e) HRTEM and EELS analysis presented in FIG. 10(a-e).
  • FIG. 10(a-c) also does not reveal significant flake deterioration, even after several minutes of exposure to remote oxygen plasma. As a consequence of disorder, one would expect the PL intensity to vary spatially.
  • FIGS. 5A and5B show photoluminescence peak height, position, and linewidth for the A exciton peak for 35 flakes of M0S 2 before and after 0 2 plasma treatment.
  • the narrowing in peak linewidth and blueshift of peak position are also listed.
  • 32 out of 35 flakes show an enhanced PL intensity.
  • the last line indicates on average PL is enhanced 6.7 times, blueshifted by 26.4 meV, and the peak linewidth reduces by 14 meV due to the plasma treatment.
  • FIG. 6 is a table of Raman scattering peak position and width for the E 1 2 g and Ai g Raman modes for 17 flakes measured before and after optimized oxygen plasma treatment. No systematic change in the peak position is observed for all 17 samples. However, the A g peak width is seen to consistently reduce after the plasma treatment. Raman data was not collected for all samples in the table illustrated in FIGS. 5A and 5B, however, sample numbers given in the tables illustrates in FIGS. 5A, 5B, and 6 correspond to the same flakes of M0S 2 .
  • FIG. 7 illustrates AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of M0S2 indicating a significant reduction in the surface residue due to plasma cleaning.
  • FIG. 8 shows the increase in flake thickness for 12 different many-layer M0S2 flakes. 1 1 out of 12 flakes show in increase in the thickness after plasma treatment. 10 of these 12 samples showed an increase in the PL intensity.
  • Figure S3 shows the PL enhancement factor plotted as a function of the change in flake thickness for these 10 samples. Two distinct trends are evident in this plot. For the samples indicated in blue, the PL enhancement factor scales linearly with the relative increase in thickness (ah/h), indicating that all of the M0S2 layers are being evenly intercalated. Samples in red, on the other hand, show a universal PL enhancement factor of approximately 2.2X independent of the relative increase in thickness, which we attribute to intercalation only of the top layer.
  • FIG. 9 illustrates correlation of the observed PL enhancement with the relative increase in interlayer separation (Ah/h) showing trend lines corresponding to two types of samples with uniformly intercalated layers (blue) and top-layer only intercalation (red).
  • a few layer flake of M0S2 was transferred to a TEM grid, using the standard PMMA transfer technique [X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, R. S. Ruoff, Nano Letters 2009, 9, 4359].
  • the structural quality of the flake was confirmed using high resolution imaging and electron diffraction at 200kV, as shown in Figs 10(a) and 10(b), and STEM-EELS images were collected on a post column Gatan Imaging Filter Quantum system after successive oxygen plasma steps. EEL spectra obtained are fitted to a Gaussian function to determine the plasmon energy. The shift of the plasmon loss peak is plotted as a function of the oxygen plasma exposure time in FIG. 10(e), showing a consistent increase in plasmon energy, which indicates an increase in charge density in the MoS 2 . It should be noted that the first data point in this plot is affected by beam induced surface contamination of the M0S2 during our initial high resolution imaging, which required exposure to the beam for a few hours.
  • LEDs light emitting diodes
  • VCSELs vertical cavity surface emitting lasers
  • direct gap semiconductors are not limited by this requirement, and hence, are inherently better suited for efficient optoelectronic devices.
  • direct gap semiconductors are not limited by this requirement, and hence, are inherently better suited for efficient optoelectronic devices.
  • TMDCs transition metal dichalcogenides
  • single atomic layers of this material are direct gap (and hence desirable for optoelectronics)
  • multiple layer TMDCs are indirect gap, and hence form inefficient optoelectronic devices.
  • Our approach based on a scalable exposure to remotely generate oxygen plasma, has been shown to convert such multiple layer TMDCs from indirect to direct gap materials through electronic decoupling. This process opens up the possibility of creating efficient optoelectronic devices from multilayer TMDCs desirable for potential future application such as LEDs, lasers, and photovoltaic solar cells.
  • TMDCs transition metal dichalcogenides
  • single atomic layers of this material are direct gap (and hence desirable for optoelectronics)
  • multiple layer TMDCs are indirect gap, and hence form inefficient optoelectronic devices.
  • the approach described herein, based on a scalable exposure to remotely generate oxygen plasma, has been shown to convert such multiple layer TMDCs from indirect to direct gap materials through electronic decoupling. This process opens up the possibility of creating efficient optoelectronic devices from multilayer TMDCs desirable for potential future application such as LEDs, lasers, and photovoltaic solar cells.
  • this material could be as a light emitting diode (LED), solid state laser, photodetector, solar cell, field effect transistor (FET), or thermoelectric generator or cooler.
  • LED light emitting diode
  • FET field effect transistor
  • thermoelectric generator or cooler thermoelectric generator

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

Description

BULK DIRECT GAP MOS2 BY PLASMA INDUCED LAYER
DECOUPLING
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is based upon and claims priority to U.S. provisional patent application 62/092,602, entitled "BULK DIRECT GAP MOS2 BY PLASMA INDUCED LAYER DECOUPLING," filed December 16, 2014, attorney docket 094852-0048. The entire content of this application is incorporated herein by reference.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH
[0002] This invention was made with government support under Contract No. DE-FG02-07ER46376 awarded by the Department of Energy; this invention was also made with government support under Contract Nos. 1124733 and 1128304 awarded by the National Science Foundation. The government has certain rights in the invention.
BACKGROUND
TECHNICAL FIELD
[0003] This disclosure relates to bulk direct transition metal dichalcogenides (TMDCs).
DESCRIPTION OF RELATED ART
[0004] Two dimensional materials, such as graphene and few layer transition metal dichalcogenides (TMDCs) have attracted great research interest in the past decade, since mechanical exfoliation of these materials from their three
dimensional bulk counterparts was demonstrated [K. Novoselov, D. Jiang, F.
Schedin, T. Booth, V. Khotkevich, S. Morozov, A. Geim, Proceedings of the National Academy of Sciences of the United States of America 2005, 102, 10451 ]. Graphene, in particular, is of tremendous interest from a scientific standpoint due to its linear band dispersion [A. C. Neto, F. Guinea, N. Peres, K. S. Novoselov, A. K. Geim, Reviews of Modern Physics 2009, 81 , 109], and excellent carrier mobility [K. I. Bolotin, K. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. Stormer, Solid State Communications 2008, 146, 351 ], allowing observation of phenomena such as the quantum hall effect [Y. Zhang, Y.-W. Tan, H. L. Stormer, P. Kim, Nature 2005, 438, 201 ; A. K. Geim, K. S. Novoselov, Nature Materials 2007, 6, 183; V. Singh, M. M. Deshmukh, Physical Review B 2009, 80, 081404], non-adiabatic phonon anomalies [S. Pisana, M. Lazzeri, C. Casiraghi, K. S.
Novoselov, A. K. Geim, A. C. Ferrari, F. Mauri, Nature Materials 2007 ', 6, 198], and Dirac Fermion nature of electrons [S. Pisana, M. Lazzeri, C. Casiraghi, K. S. Novoselov, A. K. Geim, A. C. Ferrari, F. Mauri, Nature Materials 2007 ', 6, 1988; J. Tsang, M. Freitag, V. Perebeinos, J. Liu, P. Avouris, Nature Nanotechnology 2007, 2, 725]. However, due to its gapless dispersion, its utility in the field of optoelectronics may be limited.
[0005] Transition metal dichalcogenides, such as M0S2, WS2, and WSe2, on the other hand, are found to exist in similar layered structures and exhibit finite band gaps in the visible wavelength range [Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano, Nature Nanotechnology 2012, 7, 699; M.
Chhowalla, H. S. Shin, G. Eda, L.-J. Li, K. P. Loh, H. Zhang, Nature Chemistry 2013, 5, 263; K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Physical Review Letters 2010, 105, 136805].
[0006] TMDCs have traditionally been used as lubricants and host materials for intercalation compounds [M. Dresselhaus, MRS Bulletin 1987, 12, 24; S. M.
Whittingha, Intercalation chemistry, Elsevier, 2012]. The optical properties of these TMDCs may vary significantly with layer thickness [K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Physical Review Letters 2010, 105, 136805]. While monolayer M0S2 and WSe2 are direct band gap materials, their few layer counterparts are indirect semiconductors, which show a greatly suppressed photoluminescence(PL) [K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz,
Physical Review Letters 2010, 105, 136805; A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang, Nano Letters 2010, 10, 1271 ].
Consequently, most recent research efforts have been directed towards
monolayer TMDCs. Monolayers, while direct band gap, have small optical densities, which may limit their potential use in practical devices. SUMMARY
[0007] Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least .5, 1 , or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a
thermoelectric generator, or a thermoelectric cooler.
[0008] A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.
[0009] These, as well as other components, steps, features, objects, benefits, and advantages, will now become clear from a review of the following detailed description of illustrative embodiments, the accompanying drawings, and the claims.
BRI EF DESCRIPTION OF DRAWINGS
[0010] The drawings are of illustrative embodiments. They do not illustrate all embodiments. Other embodiments may be used in addition or instead. Details that may be apparent or unnecessary may be omitted to save space or for more effective illustration. Some embodiments may be practiced with additional components or steps and/or without all of the components or steps that are illustrated. When the same numeral appears in different drawings, it refers to the same or like components or steps.
[0011] FIG. 1 illustrates an optical microscope image of a few layer M0S2 flake (a) before and (b) after 3 minutes of oxygen plasma treatment. FIG. 1 (C) illustrates photoluminescence spectra before and after oxygen plasma treatment, plotted on different Y scales, highlighting the blue shift of the A exciton, the narrowing of the spectral linewidth, and the emergence of the asymmetry in PL lineshape after plasma treatment at 300K. FIG. 1 (d) is an inset that shows the emergence of a distinct, low energy peak at 100K. The relative intensity of the low energy PL peak is shown as a function of temperature.
[0012] FIG. 2 illustrates AFM (height) images of a MoS2 flake taken (a) before and (b) after a 3 minute oxygen plasma treatment (Plotted on different color scales). The step height profiles along the dashed lines are shown in (c). A significant increase in sample thickness, of about 2nm, is observed after plasma treatment.
[0013] FIG. 3 illustrates an optical microscope image of a few layer M0S2 flake (a) before and (b) after 3 minutes of oxygen plasma treatment. FIG. 1 (C) illustrates Raman spectra before and after plasma treatment. No significant shift in the Raman peaks is observed, although the Raman intensity for both peaks is reduced, and a slight narrowing of the peaks is observed.
[0014] FIG. 4(a) illustrates atomistic structure of the 4L- MoS2 with the equilibrium vdW gap, dvciw, and the modified vdW gap, dvciw (new). FIG. 4(b) illustrates direct gap (solid) and indirect gap (dotted) energy transitions for 2L, 3L and 4L M0S2 for a range of increases in the vdW gap ( dvdvJ). The dotted vertical lines indicate the indirect to direct transition vdW gaps for 2L (green), 3L (blue), and 4L (red) MoS2 .
[0015] FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma treatment for 35 M0S2 flakes measured in this study.
[0016] FIG. 6 is a table of Raman scattering peak position and width for the E1 2g and Aig Raman modes for 17 flakes measured before and after optimized oxygen plasma treatment.
[0017] FIG. 7 illustrates AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of M0S2 indicating a significant reduction in the surface residue due to plasma cleaning.
[0018] FIG. 8 shows the increase in flake thickness for 12 different many-layer M0S2 flakes.
[0019] FIG. 9 illustrates correlation of the observed PL enhancement with the relative increase in interlayer separation (Ah/h) showing trend lines corresponding to two types of samples with uniformly intercalated layers (blue) and top-layer only intercalation (red).
[0020] FIGS. 10(a) and 10(b) illustrate the structural quality of the flake was confirmed using high resolution imaging and electron diffraction at 200kV. FIG. 10(c) illustrates an electron diffraction pattern. FIG. 10(d) illustrates an EELS spectrum. FIG. 10(e) illustrates the shift of the plasmon loss peak is plotted as a function of the oxygen plasma exposure time.
DETAILED DESCRIPTION OF I LLUSTRATIVE EMBODIMENTS
[0021] Illustrative embodiments are now described. Other embodiments may be used in addition or instead. Details that may be apparent or unnecessary may be omitted to save space or for a more effective presentation. Some embodiments may be practiced with additional components or steps and/or without all of the components or steps that are described.
[0022] A robust method for engineering the optoelectronic properties of many- layer M0S2 using low energy oxygen plasma treatment is now described.
[0023] Gas phase treatment of M0S2 with oxygen radicals generated in an upstream N2-O2 plasma may enhance the photoluminescence (PL) of many-layer, mechanically exfoliated M0S2 flakes by up to 20 times, without reducing the layer thickness of the material. A blue shift in the photoluminescence spectra and narrowing of linewidth may be consistent with a transition of M0S2 from indirect to direct band gap material. Atomic force microscopy and Raman spectra reveal that the flake thickness may actually increase as a result of the plasma treatment, indicating an increase in the interlayer separation in MoS2. Ab-initio calculations reveal that the increased interlayer separation may be sufficient to decouple the electronic states in individual layers, leading to a transition from an indirect to direct gap semiconductor. With optimized plasma treatment parameters, enhanced PL signals for 32 out of 35 many-layer MoS2 flakes (2-15 layers) tested were observed, indicating this method may be robust and scalable. Monolayer M0S2, while direct band gap, may have a small optical density, which may limits it potential use in practical devices. The results presented here may provide a material with the direct band gap of monolayer MoS2, without reducing sample thickness, and hence optical density. [0024] A gentle oxygen plasma treatment may produce a direct band gap transition in many-layer MoS2.The band structure of M0S2 with more than 4 layers in thickness is almost identical to that of bulk MoS2, and flakes thicker than that are considered "many-layer" in this disclosure. The data gathered was obtained from samples with thicknesses up to 15 layers (approximately 12nm), and approximately 5-15pm in size. This transition was studied using
photoluminescence spectroscopy, Raman Spectroscopy, atomic force microscopy (AFM), and electron energy loss spectroscopy (EELS). Ab-initio calculations provide insight into the layer decoupling mechanism responsible for this indirect to direct gap transition.
[0025] Low power, remote (or downstream) plasma treatment has been effectively used to remove hydrocarbon impurities in situations where the sample itself is known to be susceptible to damage by fast moving ionic species [B.
Anthony, L. Breaux, T. Hsu, S. Banerjee, A. Tasch, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1989, 7, 621 ]. For example, remote plasma has been used to selectively etch away metallic carbon nanotubes and surface contaminants, to enable fabrication of semiconducting single wall carbon nanotube field effect transistors [G. Zhang, P. Qi, X. Wang, Y. Lu, X. Li, R. Tu, S. Bangsaruntip, D. Mann, L. Zhang, H. Dai, Science 2006, 314, 974]. An XEI Evactron Soft Clean plasma cleaner may be used, in which the plasma is generated by flowing room air past an electrode supplied with 20W of RF power at 200mTorr. The sample is placed a certain distance (6-10cm) away from the plasma source, and ionized oxygen atoms diffuse towards the sample chamber with low kinetic energies. Samples were exposed to the O2 plasma for about 3 minutes. While typical plasma cleaners used in semiconductor fabrication operate using a "sputtering" mechanism, wherein the sample is bombarded with ions carrying significant kinetic energy, remote plasma cleaners rely mainly on the chemical reactivity of the ionized oxygen to remove surface contaminants. Despite the presence of nitrogen in the gas mixture, the plasma itself mainly consists of oxygen radicals, since the N2 molecule has a much higher bonding energy.
[0026] FIGS. 1 (a) and 1 (b) show optical microscope image of a mechanically exfoliated flake of MoS2 on an oxidized silicon wafer. The photoluminescence (PL) spectra of these flakes are obtained using a 532nm excitation laser focused to a Ο.δμΓΠ spot, attenuated in power to 10pW/pm2, to minimize sample heating. The PL spectra of the same M0S2 flake taken before and after three minutes of oxygen plasma treatment are shown in FIG. 1 (C). The two peaks labeled A and B correspond to transitions between the conduction band and the two (spin-orbit split) valence bands at the K point in the Brillouin zone. In this particular case, there is a sixteen fold enhancement of the PL intensity after the oxygen plasma treatment, along with significant (about 46%) narrowing of the spectral linewidth, indicating an improvement in material quality. The PL peak also shifts from typical energies between 1.81 -1 .83eV before O2 plasma to 1 .86 eV after the plasma treatment. This is consistent with the observations of Mak et. al on suspended, monolayer, direct gap MoS2 [K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Physical Review Letters 2010, 105, 136805].
[0027] FIGS. 5(a) and 5(b) illustrate different parts of a table that provides a list of PL peak positions and linewidths measured before and after oxygen plasma treatment for 35 M0S2 flakes measured in this study. Enhanced PL intensities were observed for 32 out of 35 many-layer M0S2 flakes tested, indicating this method is robust and scalable.
[0028] The large intensity enhancement and blueshift of the PL peak observed after oxygen treatment is not the result of a reduction in the layer thickness of the M0S2, as shown by AFM and Raman measurements. The AFM images taken before and after oxygen treatment, surprisingly, reveal an increase in flake thickness, as shown in Figure 2c. The error in height measurements can be estimated from the standard deviation of the measured profile on the underlying Si02 substrate, which is found to be 2.4A both before and after plasma treatment. For the AFM data shown in Figure 2c, the step height along the white dashed lines in FIGS. 2a and 2b increases by about 20±5A due to the treatment with oxygen plasma. The 20A increase in the film thickness, distributed across the 9 nm MoS2 film consisting of 1 1 to 13 monolayers, corresponds to an average increase in each van-der-Waals (vdW) gap of 1 .5A to 1 .8A. Density functional theory calculations described below show that this increased interlayer distance is sufficient to cause an indirect to direct band gap transition suggesting that the enhanced PL observed is the result of plasma-assisted layer decoupling of the MoS2 lattice. [0029] Raman spectra taken before and after oxygen treatment also indicate that no thinning of the sample is occurring. In FIG. 3C, the Raman spectra of an MoS2 flake exhibit two peaks corresponding to the E1 2g (in plane) and A g (out of plane) vibrational modes [C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, S. Ryu, ACS Nano 2010, 4, 2695]. The separation between these two peaks provides a good measure of the layer thickness of the material, varying from 19cm"1 for monolayer to 25cm"1 for N-layer (N>6) MoS2 [C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, S. Ryu, ACS Nano 2010, 4, 2695]. The Raman spectra of 17 flakes of M0S2 were studied, before and after O2 plasma treatment. On average, the separation between the two Raman peaks reduced from 22.6 cm"1 to 21.4 cm" 1 after plasma treatment, indicating that the flakes are still multilayer MoS2. We consistently see a downshift in the Aig (out of plane) Raman mode position and a narrowing of the Raman linewidth. However, no consistent and systematic change of the in plane (E1 2g) mode is observed, which is also seen to upshift slightly at times. These results indicate that the intralayer spring constant is unaffected by the plasma treatment, and the interlayer "spring constant" is consistently weakened (albeit by a small amount). This shows that a mere flake thinning is not the mechanism responsible for the enhanced PL intensity observed after O2 plasma treatment. On the contrary, an increase in the flake thickness shown by AFM, and the softening of the interlayer spring constant seen in the Raman spectra, point to a mechanism in which the interlayer van der Waals coupling is weakened. The reduction in Raman intensity is a possible consequence of the change in lattice symmetry, which determines the matrix elements and selection rules for Raman active vibrational modes. A tabulated summary of the Raman data is given in FIG. 6. While Raman spectroscopy can only differentiate single layer, bilayer and trilayer M0S2 reliably, the Raman data excludes the possibility that the flake thickness has actually been reduced to monolayer M0S2.
[0030] To explain the observed change in the PL peak with oxygen
intercalation, the emergence of the PL peak at 1 .8 eV is attributed to an increase in the van-der-Waals (vdW) gap between the adjacent layers of MoS2. To support this argument, the electronic band structure of bilayer (2L) was calculated, trilayer (3L) and quad-layer (4L) M0S2, as shown in FIG. 4(b), for a range of vdW gap distances between the adjacent layers. Calculations are based on first-principles density functional theory (DFT) using the projector augmented wave method as implemented in the software package VASP [G. Kresse, J. Hafner, Physical Review B 1993, 47, 558]. The screened Heyd-Scuseria-Ernzerhof (HSE) hybrid functional has been employed for this study [J. Heyd, G. E. Scuseria, M.
Ernzerhof, The Journal of Chemical Physics 2003, 1 18, 8207]. Spin-orbit coupling was included self-consistently within the band structure calculations. The HSE calculations incorporate 25% short-range Hartree Fock exchange, and the screening parameter is set to 0.4A [F. Zahid, L. Liu, Y. Zhu, J. Wang, H. Guo, AIP Advances 2013, 3, 0521 1 1 ]. A Monkhorst-Pack scheme was adopted to integrate over the Brillouin zone with a k-mesh 9 x 9 x 1 for the bilayer and trilayer structures. The k-mesh was reduced to a converged 4 x 4 x 1 grid for the quad- layer structure HSE calculations. A plane-wave basis kinetic energy cutoff of 300 eV was used. The lattice constants for the bilayer and trilayer structures are obtained from our prior calculations on the bulk structure of M0S2 that have been optimized with vdW interactions accounted for using a semi-empirical correction to the Kohn-Sham energies [D. Wickramaratne, F. Zahid, R. K. Lake, The Journal of Chemical Physics 2014, 140, 124710]. A vacuum spacing of 15 A is added along the z-axis for all the structures. The atomic coordinates for each structure were optimized in all directions using the DFT-D2 dispersion corrections [S. Grimme, Journal of Computational Chemistry 2006, 27, 1787] until all the interatomic forces are below 0.01 eV/A. The default level of theory in all calculations is HSE with spin-orbit coupling. Only deviations from the defaults are noted. The equilibrium vdW gap, dvciw, is 3.12A for the 2L, 3L and 4L MoS2 structures.
[0031] The valence band edge, Γν, is composed of 28% pz orbitals from the S atoms and 67% dz 2 orbitals from Mo atoms. The valence bands at Kv contain no dz 2 or Pz components and are primarily composed of dx 2, and dxy orbitals. Because of the large pz orbital component of the S atoms, the Γν valley has the largest interlayer coupling and is, therefore, most sensitive to the presence of adjacent layers. When two monolayers are brought together, the Γν valleys of the two layers couple and split. At the equilibrium interlayer distance of 3.12A, the energy splitting is 620 meV. The corresponding energy splitting at Kv due to interlayer coupling is 74 meV. Thus, the interlayer coupling causes the Γν valley to rise above the Kv valley as two monolayers are brought into close proximity. [0032] The orbital composition of the conduction band at Kc is 67% dz 2 with no Pz component. The next closest conduction band valley is at∑c composed of 36% dz 2 and a minor contribution from the pz orbitals of the S atoms. The conduction band at Kc has no pz components from the sulfur atoms. Thus, the Kc valley is only weakly affected by the proximity of an adjacent layer, and as two monolayers are brought together, the conduction band remains at Kc for the 2L, 3L and 4L structures.
[0033] The electronic band structures for 2L, 3L, and 4L M0S2 are calculated for a range of vdW gap distances starting from the equilibrium value of dvciw = 3.12A and increasing it up to a maximum of 1 .6 times the equilibrium value. When the vdW gap is increased by a factor of 1 .6 in a 2L structure, the energy of Γν decreases by 470 meV with respect to the vacuum energy. The Kv-Kc direct gap transition changes by only 2 meV. A crossover from an indirect to direct gap transition occurs when the equilibrium vdW gap in 2L, 3L, and 4L M0S2 is increased by 1 .0 A, 1 .13 A, and 1 .45 A, respectively. At these separation distances the direct gap and indirect gap energies are equal. With further increases in the vdW gap the band gap becomes direct. The direct gap Kv-Kc and the indirect gap Γν-Κ0 band gap energies calculated using DFT are illustrated for the 2L ,3L, and 4L structures in FIG. 4b. The calculated increases in the vdW gaps that produce the indirect to direct transition are consistent with the experimentally measured increase in the film thickness shown in FIG. 2(C).
[0034] The consistency between the increase in interlayer separation revealed by AFM and Raman spectroscopy, and the corresponding increase in PL yields with theoretical calculations point to a mechanism in which exposure to oxygen plasma disturbs the interlayer van der Waals bonding. One scenario which could lead to this effect is intercalation of van der Waals gap of M0S2 by a foreign species during expose to oxygen plasma. Electrochemical techniques, using liquid phase solvents, have been shown to enable intercalation of small chemical species (such as lithium ions) into lattices of layered materials like graphite [Z. Shu, R. McMillan, J. Murray, Journal of The Electrochemical Society 1993, 140, 922]. More recently, such methods have been used to completely separate the individual layers of two dimensional materials [V. Nicolosi, M. Chhowalla, M. G. Kanatzidis, M. S. Strano, J. N. Coleman, Science 2013, 340; J. N. Coleman, M. Lotya, A. O'Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, R. J. Smith, Science 201 1 , 331 , 568; Y. Hernandez, V. Nicolosi, M. Lotya, F. M. Blighe, Z. Sun, S. De, I. McGovern, B. Holland, M. Byrne, Y. K. Gun'Ko, Nature Nanotechnology 2008, 3, 563; G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M.
Chen, M. Chhowalla, Nano Letters 201 1 , 1 1 , 51 1 1 ]. Layer separation is achieved by completely saturating the interlayer gaps in the host TMDC lattice with guest species, followed by mechanical agitation. From intercalation chemistry, we know that a guest species need not distribute itself evenly in the interlayer gaps of the host lattice. It is common to find staging of guest atoms, which is the occupation of every other interlayer gap [M. Dresselhaus, MRS Bulletin 1987, 12, 24; S. M. Whittingha, Intercalation chemistry, Elsevier, 2012; G. Wiegers, Physica B+ C 1980, 99, 151 ]. Similarly, the guest species may cover only a fraction of the area in any one interlayer gap, leaving the host atomic layers weakly bound to one another. It would be expected, that completely saturating the interlayer spaces with guest species would lead to complete exfoliation of MoS2. Overexposure of M0S2 flakes to the plasma treatment may sometimes leads to complete removal of the flakes. However, unlike previous liquid based exfoliation methods, by controlling the plasma treatment parameters, only partial coverage of the interlayer spaces may be ensured, and hence prevent complete exfoliation. FIG. 8 shows the increase in flake thickness for 12 different many-layer MoS2 flakes. 1 1 out of 12 flakes show an increase in the thickness after plasma treatment. 10 of these 12 samples showed an increase in the PL intensity. FIG. 9 shows the PL enhancement factor plotted as a function of the change in flake thickness for these 10 samples.
[0035] In M0S2, such an engineered system may be tremendously
advantageous for device applications. By reducing the inter-planar overlap of electronic states in many-layer M0S2, one would expect the material to behave as a stack of isolated "monolayer" M0S2, each with a direct band gap desirable for optoelectronic applications. One of the challenges in creating an optoelectronic device such as a p-n junction from a "monolayer" crystal arises from local fluctuations in charge densities due to surface impurities, which precludes controlled doping of the material. The direct band gap many-layer crystal obtained in this work would be far less susceptible to surface effects. Furthermore, many layer, direct band gap M0S2 would enable cross plane p-n junctions to be fabricated with finite space charge regions, as in conventional p-n junctions. The applicability of this method in decoupling layers is likely limited for significantly thicker flakes, due to the kinetics of the intercalation process. The intercalation of foreign species appears to be quite stable, and plasma-treated M0S2 does not revert to its indirect form over time. The presence of foreign species, however, significantly destabilizes the interlayer van der Waals bonding in the MoS2, and some delamination of the M0S2 is observed when stored under ambient conditions over the span of a few weeks. By applying various strategies for hermetic sealing, this instability may be overcome in practical device applications.
[0036] Another aspect of the oxygen plasma treatment, evident from the AFM images in FIGS. 7(a) and 7(b), is the dramatic reduction in surface contaminants arising from lithographic and exfoliation residues, which is expected to contribute to the dramatic increase in PL efficiency shown in FIG. 1 (C). The plasma cleaning treatment also leads to a consistent narrowing of the PL linewidth, as evident in FIG. 1 C. While the intensity of the A exciton luminescence is greatly enhanced, the intensity of the B exciton is actually diminished. This is also to be expected, since optically generated higher energy (B) excitons, due to their increased lifetimes, now have more time to find a decay path to the more energetically favorable (A) state before radiative recombination. This transition from B to A is disallowed in defect free M0S2, since those states are orthonormal. However, oxygen plasma treatment perturbs the crystal potential, thereby allowing this transition, and explaining the reduction of B exciton luminescence. This observed blue shift in the PL peak is consistent with previous studies on suspended M0S2 [K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Physical Review Letters 2010, 105, 136805] and M0S2 passivated by ionic liquids [Z. Li, S.-W. Chang, C.-C. Chen, S. B.
Cronin, 2014]. The lineshape of the observed luminescence from the A exciton is found to be asymmetric, with a significant shift of the spectral weight towards the low energy side, as shown in FIG. 1 C. This apparent asymmetry is the result of the emergence of a peak near the low energy shoulder of the A excitonic peak.
Photoluminescence spectra taken at cryogenic temperatures provide insight into the underlying nature of this lineshape asymmetry. Here, the lower energy peak may be distinguished clearly, shown in the inset of FIG. 1 (d). As shown recently by Korn et al. [T. Korn, S. Heydrich, M. Hirmer, J. Schmutzler, C. Schuller, Applied Physics Letters 201 1 , 99, 102109], this peak (labeled Ad) is characteristic of the formation of a localized excitonic state, due to the creation of defects, or alternatively, the emergence of disorder. FIG. 1 d shows the relative intensity of this low energy Ad peak to the dominant A exciton peak, as a function of sample temperature. At room temperature, the excitonic state is no longer well localized, leading to a diminished intensity of the observed disorder related peak. When higher RF power plasmas are used, the emergence of disorder and defects as indicated by the sub-band gap Ad peak in the PL spectra at room temperature are observed. However, under the optimized conditions used in this work, any Ad peak in the PL spectra at room temperature is not observed. HRTEM and EELS analysis presented in FIG. 10(a-e). FIG. 10(a-c) also does not reveal significant flake deterioration, even after several minutes of exposure to remote oxygen plasma. As a consequence of disorder, one would expect the PL intensity to vary spatially. However, in 2D PL maps, inhomogeneity of PL intensity over a MoS2 flake of uniform thickness was not detected. This may be because both the exciton radius, and the size of any defect state, are expected to be at least an order of magnitude smaller than the diffraction limit. While interpretation of far field optical spectroscopy, as presented in this disclosure, sheds some light on the possible mechanisms at play, more direct evidence may be found by near field optical studies. Similarly, a more detailed ab-initio calculation by including guest species in the van der Waals gap would prove to be useful.
[0037] A recent report in literature [H. Nan, Z. Wang, W. Wang, Z. Liang, Y. Lu, Q. Chen, D. He, P. Tan, F. Miao, X. Wang, ACS Nano 2014] also observes similar PL enhancement, attributed to formation of Mo-0 bonds based on XPS signals. However, XPS measurements are ill suited to flakes of MoS2, as the illuminated spot size is typically 15-20pm, which is considerably larger than the typical flake size. Such a bond formation may have a dramatic impact on the Raman spectrum, due to a change in the atomic mass. No such shift was observed, hence ruling out Mo-0 bond formation.
[0038] In summary, an indirect to direct band gap transition in many-layer MoS2 has been demonstrated using a simple, scalable oxygen plasma induced process. The PL efficiency is found to increase due to the decoupling of electronic states in individual layers. Furthermore, a significant narrowing in spectral linewidth is observed, indicating an increase in the exciton lifetime in M0S2, due to removal of surface contaminants. The mechanism for the photoluminescence enhancement relies on incomplete filling (or intercalation) of the interlayer gap with a guest species, with a very slight change in doping. While the increase in interlayer separation confines the carriers in two dimensions, the possible creation of defects in MoS2 likely gives rise localized excitonic states with longer lifetimes. This simple processing step could have vast implications for future generations of optoelectronic devices by providing direct band gap transition metal
dichalcogenides with large optical densities.
[0039] The table in FIGS. 5A and5B show photoluminescence peak height, position, and linewidth for the A exciton peak for 35 flakes of M0S2 before and after 02 plasma treatment. The narrowing in peak linewidth and blueshift of peak position are also listed. Overall, 32 out of 35 flakes show an enhanced PL intensity. The last line indicates on average PL is enhanced 6.7 times, blueshifted by 26.4 meV, and the peak linewidth reduces by 14 meV due to the plasma treatment.
[0040] The large standard deviation in table in FIGS. 5A and 5B is to be expected since the study investigates plasma induced decoupling in a variety of layer thicknesses of the "as-exfoliated" flakes. Furthermore, the surface conditions vary from sample to sample in mechanically exfoliated flakes, due to a lack of control over surface morphology and residues. This is apparent in the wide spread of the PL emission energies (1 .81 -1 .86 eV) before oxygen plasma treatment. After treatment with O2 plasma, however, a much more narrow distribution of PL emission energies (1 .86-1 .88 eV) is observed, particularly for flakes showing substantial PL enhancement.
[0041] FIG. 6 is a table of Raman scattering peak position and width for the E1 2g and Aig Raman modes for 17 flakes measured before and after optimized oxygen plasma treatment. No systematic change in the peak position is observed for all 17 samples. However, the A g peak width is seen to consistently reduce after the plasma treatment. Raman data was not collected for all samples in the table illustrated in FIGS. 5A and 5B, however, sample numbers given in the tables illustrates in FIGS. 5A, 5B, and 6 correspond to the same flakes of M0S2. [0042] FIG. 7 illustrates AFM images taken before (a) and after (b) 3 minutes of oxygen plasma treatment for a flake of M0S2 indicating a significant reduction in the surface residue due to plasma cleaning.
PL Enhancement Mechanisms: Layer Decoupling and Removal of Surface Residue
[0043] FIG. 8 shows the increase in flake thickness for 12 different many-layer M0S2 flakes. 1 1 out of 12 flakes show in increase in the thickness after plasma treatment. 10 of these 12 samples showed an increase in the PL intensity. Figure S3 shows the PL enhancement factor plotted as a function of the change in flake thickness for these 10 samples. Two distinct trends are evident in this plot. For the samples indicated in blue, the PL enhancement factor scales linearly with the relative increase in thickness (ah/h), indicating that all of the M0S2 layers are being evenly intercalated. Samples in red, on the other hand, show a universal PL enhancement factor of approximately 2.2X independent of the relative increase in thickness, which we attribute to intercalation only of the top layer.
[0044] In FIG. 8, the measured thicknesses of 12 different many-layer M0S2 flakes before and after treatment is shown with remote oxygen plasma, as measured using atomic force microscopy.
TEM and EELS Analysis
[0045] To ensure structural integrity of the M0S2 is not disturbed by the oxygen plasma treatment, high resolution transmission electron microscopy was performed. To investigate any change in the charge density of the sample, the plasmon loss peak in the electron energy loss spectrum [R. F. Egerton, Electron energy-loss spectroscopy in the electron microscope, Springer, 201 1 ] (EELS) was studied for M0S2 in a transmission electron microscope (TEM). To first order, the unscreened plasmon frequency is defined by the Drude model as
ne2
[0046] FIG. 9 illustrates correlation of the observed PL enhancement with the relative increase in interlayer separation (Ah/h) showing trend lines corresponding to two types of samples with uniformly intercalated layers (blue) and top-layer only intercalation (red). [0047] A few layer flake of M0S2 was transferred to a TEM grid, using the standard PMMA transfer technique [X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, R. S. Ruoff, Nano Letters 2009, 9, 4359]. The structural quality of the flake was confirmed using high resolution imaging and electron diffraction at 200kV, as shown in Figs 10(a) and 10(b), and STEM-EELS images were collected on a post column Gatan Imaging Filter Quantum system after successive oxygen plasma steps. EEL spectra obtained are fitted to a Gaussian function to determine the plasmon energy. The shift of the plasmon loss peak is plotted as a function of the oxygen plasma exposure time in FIG. 10(e), showing a consistent increase in plasmon energy, which indicates an increase in charge density in the MoS2. It should be noted that the first data point in this plot is affected by beam induced surface contamination of the M0S2 during our initial high resolution imaging, which required exposure to the beam for a few hours. All subsequent EELS images required considerably shorter exposures to the electron beam. This upshift in the plasmon loss peak indicates about a 1 % increase in the density of valence electrons in the sample, which would be explained by partial intercalation with a foreign species having more valence shell electrons than molybdenum. The emergence of the trion state, however, is deemed unlikely with just a 1 % modulation of charge density.
Applications
[0048] Semiconductor optoelectronic devices have revolutionized technology over the last decade, with the rapid emergence of light emitting diodes (LEDs) and photovoltaic solar cells. Similarly, diode pumped lasers such as vertical cavity surface emitting lasers (VCSELs) are a class of optoelectronic devices which currently form the backbone of the optical communication channels which power the internet. This progress has been enabled by research efforts to enhance the interaction of light (photons) with the semiconducting material and its charge carriers (electrons and holes). In indirect gap semiconductors (such as silicon), the transfer of energy from photons to electrons is inherently inefficient, since it requires the creation of lattice vibration to conserve momentum. However, direct gap semiconductors are not limited by this requirement, and hence, are inherently better suited for efficient optoelectronic devices. However, direct gap semiconductors are not limited by this requirement, and hence, are inherently better suited for efficient optoelectronic devices.
[0049] Recently, two dimensional semiconductors such as transition metal dichalcogenides (TMDCs) have been explored as potential semiconductors of for future device application. While single atomic layers of this material are direct gap (and hence desirable for optoelectronics), multiple layer TMDCs are indirect gap, and hence form inefficient optoelectronic devices. Our approach, based on a scalable exposure to remotely generate oxygen plasma, has been shown to convert such multiple layer TMDCs from indirect to direct gap materials through electronic decoupling. This process opens up the possibility of creating efficient optoelectronic devices from multilayer TMDCs desirable for potential future application such as LEDs, lasers, and photovoltaic solar cells.
[0050] Recently, two dimensional semiconductors such as transition metal dichalcogenides (TMDCs) have been explored as potential semiconductors of for future device application. While single atomic layers of this material are direct gap (and hence desirable for optoelectronics), multiple layer TMDCs are indirect gap, and hence form inefficient optoelectronic devices. The approach described herein, based on a scalable exposure to remotely generate oxygen plasma, has been shown to convert such multiple layer TMDCs from indirect to direct gap materials through electronic decoupling. This process opens up the possibility of creating efficient optoelectronic devices from multilayer TMDCs desirable for potential future application such as LEDs, lasers, and photovoltaic solar cells.
[0051] The components, steps, features, objects, benefits, and advantages that have been discussed are merely illustrative. None of them, nor the
discussions relating to them, are intended to limit the scope of protection in any way. Numerous other embodiments are also contemplated. These include embodiments that have fewer, additional, and/or different components, steps, features, objects, benefits, and/or advantages. These also include embodiments in which the components and/or steps are arranged and/or ordered differently.
[0052] For example, this material could be as a light emitting diode (LED), solid state laser, photodetector, solar cell, field effect transistor (FET), or thermoelectric generator or cooler. [0053] Unless otherwise stated, all measurements, values, ratings, positions, magnitudes, sizes, and other specifications that are set forth in this specification, including in the claims that follow, are approximate, not exact. They are intended to have a reasonable range that is consistent with the functions to which they relate and with what is customary in the art to which they pertain.
[0054] All articles, patents, patent applications, and other publications that have been cited in this disclosure are incorporated herein by reference.
[0055] The phrase "means for" when used in a claim is intended to and should be interpreted to embrace the corresponding structures and materials that have been described and their equivalents. Similarly, the phrase "step for" when used in a claim is intended to and should be interpreted to embrace the corresponding acts that have been described and their equivalents. The absence of these phrases from a claim means that the claim is not intended to and should not be interpreted to be limited to these corresponding structures, materials, or acts, or to their equivalents.
[0056] The scope of protection is limited solely by the claims that now follow. That scope is intended and should be interpreted to be as broad as is consistent with the ordinary meaning of the language that is used in the claims when interpreted in light of this specification and the prosecution history that follows, except where specific meanings have been set forth, and to encompass all structural and functional equivalents.
[0057] Relational terms such as "first" and "second" and the like may be used solely to distinguish one entity or action from another, without necessarily requiring or implying any actual relationship or order between them. The terms "comprises," "comprising," and any other variation thereof when used in
connection with a list of elements in the specification or claims are intended to indicate that the list is not exclusive and that other elements may be included. Similarly, an element preceded by an "a" or an "an" does not, without further constraints, preclude the existence of additional elements of the identical type.
[0058] None of the claims are intended to embrace subject matter that fails to satisfy the requirement of Sections 101 , 102, or 103 of the Patent Act, nor should they be interpreted in such a way. Any unintended coverage of such subject matter is hereby disclaimed. Except as just stated in this paragraph, nothing that has been stated or illustrated is intended or should be interpreted to cause a dedication of any component, step, feature, object, benefit, advantage, or equivalent to the public, regardless of whether it is or is not recited in the claims.
[0059] The abstract is provided to help the reader quickly ascertain the nature of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. In addition, various features in the foregoing detailed description are grouped together in various embodiments to streamline the disclosure. This method of disclosure should not be interpreted as requiring claimed embodiments to require more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive subject matter lies in less than all features of a single disclosed embodiment. Thus, the following claims are hereby incorporated into the detailed description, with each claim standing on its own as separately claimed subject matter.

Claims

CLAIMS The invention claimed is:
1 . Bulk direct transition metal dichalcogenide (TMDC) with an increased interiayer separation of at least .5 angstrom more than its bulk value.
2. The TMDC of claim 1 wherein the TMDC is a bulk direct band gap molybdenum disulfide (MoS2).
3. The TMDC of claim 2 wherein the increased separation is at least 1 angstrom.
4. The TMDC of claim 2 wherein the increased separation is at least 3 angstrom.
5. The TMDC of claim 2 further comprising oxygen between the interlayers.
6. The TMDC of claim 1 wherein the TMDC is a bulk direct band gap tungsten diselenide (WSe2).
7. A device comprising the TMDC of claim 1 .
8. The device of claim 7 wherein the device is an optoelectronic device.
9. The device of claim 8 wherein the optoelectronic device is an LED.
10. The device of claim 8 wherein the optoelectronic device is a solid state laser.
1 1 . The device of claim 8 wherein the optoelectronic device is a photodetector.
12. The device of claim 8 wherein the optoelectronic device is a solar cell.
13. The device of claim 8 wherein the optoelectronic device is a FET.
14. The device of claim 8 wherein the optoelectronic device is a thermoelectric generator.
15. The device of claim 8 wherein the optoelectronic device is a thermoelectric cooler.
16. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interiayer separation comprising exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma.
17. The method of claim 16 wherein the plasma exposure causes an increase in the photoluminescence efficiency of the TMDC as compared to the TMDC without the plasma exposure.
18. The method of claim 16 wherein the plasma exposure causes more charge neutral doping as compared to the TMDC without the plasma exposure.
19. The method of claim 10 wherein the plasma exposure results in longer photo-excited carrier lifetimes as compared to the TMDC without the plasma exposure.
PCT/US2015/066139 2014-12-16 2015-12-16 Bulk direct gap mos2 by plasma induced layer decoupling Ceased WO2016100538A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/536,628 US10680403B2 (en) 2014-12-16 2015-12-16 Bulk direct gap MoS2 by plasma induced layer decoupling

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462092602P 2014-12-16 2014-12-16
US62/092,602 2014-12-16

Publications (1)

Publication Number Publication Date
WO2016100538A1 true WO2016100538A1 (en) 2016-06-23

Family

ID=56127551

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/066139 Ceased WO2016100538A1 (en) 2014-12-16 2015-12-16 Bulk direct gap mos2 by plasma induced layer decoupling

Country Status (2)

Country Link
US (1) US10680403B2 (en)
WO (1) WO2016100538A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108666375A (en) * 2018-04-20 2018-10-16 华中科技大学 A kind of nano lamellar transverse direction homogeneity PN diodes and the preparation method and application thereof
KR20190012891A (en) * 2017-07-29 2019-02-11 한국표준과학연구원 Semiconductor device and Method for manufacturing thereof
JP2019084688A (en) * 2017-11-01 2019-06-06 国立研究開発法人産業技術総合研究所 Laminate of two-dimensional layered material
CN111847513A (en) * 2019-04-28 2020-10-30 中国科学院大连化学物理研究所 A kind of polyatomic co-doped molybdenum disulfide and its preparation method and application

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10263107B2 (en) * 2017-05-01 2019-04-16 The Regents Of The University Of California Strain gated transistors and method
US20210217919A1 (en) * 2018-05-28 2021-07-15 Ecole Polytechnique Federale De Lausanne (Epfl) Excitonic device and operating methods thereof
WO2020132152A1 (en) * 2018-12-18 2020-06-25 Northeastern University Two dimensional materials for use in ultra high density information storage and sensor devices
CN112786755B (en) * 2019-11-08 2023-03-17 清华大学 Light emitting diode
CN114371047A (en) * 2020-10-14 2022-04-19 石家庄铁道大学 A Band Gap Tuning Method for Monolayer MoS2
US12037259B2 (en) * 2022-05-06 2024-07-16 The Regents Of The University Of California Metal intercalation in layered MoS2 devices for enhanced photodetection

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050058406A1 (en) * 2003-09-16 2005-03-17 Agilent Technologies Inc. Optoelectronic component with thermoelectric temperature control
US20090178702A1 (en) * 2004-03-25 2009-07-16 Karl Pichler Manufacturing of optoelectronic devices
US20110037033A1 (en) * 2009-08-14 2011-02-17 Green Alexander A Sorting Two-Dimensional Nanomaterials By Thickness
US20120107488A1 (en) * 2001-05-18 2012-05-03 Cambridge University Technical Services Limited Electroluminescent Device
WO2013140181A1 (en) * 2012-03-22 2013-09-26 The University Of Manchester Photovoltaic cells
US20140008616A1 (en) * 2011-03-22 2014-01-09 The University Of Manchester Transistor device and materials for making

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4822590A (en) * 1986-04-23 1989-04-18 Simon Fraser University Forms of transition metal dichalcogenides
US9227186B2 (en) * 2012-10-04 2016-01-05 Northwestern University Synthesis of layered metal sulfide ion-exchangers
EP3107862B1 (en) * 2014-02-17 2023-09-27 UCL Business Ltd Method for producing dispersions of nanosheets

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120107488A1 (en) * 2001-05-18 2012-05-03 Cambridge University Technical Services Limited Electroluminescent Device
US20050058406A1 (en) * 2003-09-16 2005-03-17 Agilent Technologies Inc. Optoelectronic component with thermoelectric temperature control
US20090178702A1 (en) * 2004-03-25 2009-07-16 Karl Pichler Manufacturing of optoelectronic devices
US20110037033A1 (en) * 2009-08-14 2011-02-17 Green Alexander A Sorting Two-Dimensional Nanomaterials By Thickness
US20140008616A1 (en) * 2011-03-22 2014-01-09 The University Of Manchester Transistor device and materials for making
WO2013140181A1 (en) * 2012-03-22 2013-09-26 The University Of Manchester Photovoltaic cells

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190012891A (en) * 2017-07-29 2019-02-11 한국표준과학연구원 Semiconductor device and Method for manufacturing thereof
KR101972739B1 (en) 2017-07-29 2019-04-25 한국표준과학연구원 Semiconductor device and Method for manufacturing thereof
JP2019084688A (en) * 2017-11-01 2019-06-06 国立研究開発法人産業技術総合研究所 Laminate of two-dimensional layered material
JP7012347B2 (en) 2017-11-01 2022-02-14 国立研究開発法人産業技術総合研究所 Laminate of two-dimensional layered material
CN108666375A (en) * 2018-04-20 2018-10-16 华中科技大学 A kind of nano lamellar transverse direction homogeneity PN diodes and the preparation method and application thereof
CN108666375B (en) * 2018-04-20 2019-08-13 华中科技大学 A nano-layered lateral homogeneous PN diode and its preparation method and application
CN111847513A (en) * 2019-04-28 2020-10-30 中国科学院大连化学物理研究所 A kind of polyatomic co-doped molybdenum disulfide and its preparation method and application

Also Published As

Publication number Publication date
US10680403B2 (en) 2020-06-09
US20180026422A1 (en) 2018-01-25

Similar Documents

Publication Publication Date Title
US10680403B2 (en) Bulk direct gap MoS2 by plasma induced layer decoupling
Chen et al. Highly oriented atomically thin ambipolar MoSe2 grown by molecular beam epitaxy
Nayak et al. Probing evolution of twist-angle-dependent interlayer excitons in MoSe2/WSe2 van der Waals heterostructures
Jung et al. Red-to-ultraviolet emission tuning of two-dimensional gallium sulfide/selenide
Zhang et al. Unravelling the effect of sulfur vacancies on the electronic structure of the MoS 2 crystal
Dhall et al. Direct bandgap transition in many‐layer MoS2 by plasma‐induced layer decoupling
Li et al. Edge-controlled growth and etching of two-dimensional GaSe monolayers
Kobayashi et al. Growth and optical properties of high-quality monolayer WS2 on graphite
Shim et al. Large-area single-layer MoSe2 and its van der Waals heterostructures
Najmaei et al. Electrical transport properties of polycrystalline monolayer molybdenum disulfide
Zhang et al. Direct chemical vapor deposition growth and band-gap characterization of MoS2/h-BN van der Waals heterostructures on Au foils
Chen et al. Environmental changes in MoTe2 excitonic dynamics by defects-activated molecular interaction
Wang et al. All chemical vapor deposition growth of MoS2: h-BN vertical van der Waals heterostructures
Liu et al. Controllable growth of vertical heterostructure GaTe x Se1–x/Si by molecular beam epitaxy
Wang et al. Controlled Synthesis of Two-Dimensional 1 T-TiSe2 with Charge Density Wave Transition by Chemical Vapor Transport
Chen et al. Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys
Gutiérrez et al. Extraordinary room-temperature photoluminescence in triangular WS2 monolayers
Mitioglu et al. Optical manipulation of the exciton charge state in single-layer tungsten disulfide
Taghinejad et al. Defect-mediated alloying of monolayer transition-metal dichalcogenides
Zhao et al. Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets
Jeon et al. Controlled MoS2 layer etching using CF4 plasma
Bourrellier et al. Nanometric resolved luminescence in h-BN flakes: excitons and stacking order
Wang et al. Chemical vapor deposition growth of two-dimensional monolayer gallium sulfide crystals using hydrogen reduction of Ga2S3
Hu et al. Controlled growth and photoconductive properties of hexagonal SnS2 nanoflakes with mesa-shaped atomic steps
Ludwiczak et al. Heteroepitaxial growth of high optical quality, wafer-scale van der Waals heterostrucutres

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15871003

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15871003

Country of ref document: EP

Kind code of ref document: A1