WO2016097017A1 - Substituted 1,2,3-triylidenetris(cyanomethanylylidene)) cyclopropanes for vte, electronic devices and semiconducting materials using them - Google Patents

Substituted 1,2,3-triylidenetris(cyanomethanylylidene)) cyclopropanes for vte, electronic devices and semiconducting materials using them Download PDF

Info

Publication number
WO2016097017A1
WO2016097017A1 PCT/EP2015/080046 EP2015080046W WO2016097017A1 WO 2016097017 A1 WO2016097017 A1 WO 2016097017A1 EP 2015080046 W EP2015080046 W EP 2015080046W WO 2016097017 A1 WO2016097017 A1 WO 2016097017A1
Authority
WO
WIPO (PCT)
Prior art keywords
trifluormethyl
trifluorphenyl
cyano
compound
radialene
Prior art date
Application number
PCT/EP2015/080046
Other languages
French (fr)
Inventor
Markus Hummert
Achim Bruch
Christiane KÖHN
Max P. Nüllen
Original Assignee
Novaled Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Novaled Gmbh filed Critical Novaled Gmbh
Priority to EP15813358.7A priority Critical patent/EP3233787B1/en
Priority to CN202310716552.1A priority patent/CN116789565A/en
Priority to JP2017532070A priority patent/JP6649952B2/en
Priority to CN201580069040.4A priority patent/CN107207420A/en
Priority to KR1020177019758A priority patent/KR102601563B1/en
Priority to CN202310717101.XA priority patent/CN116789566A/en
Priority to US15/536,778 priority patent/US10128442B2/en
Publication of WO2016097017A1 publication Critical patent/WO2016097017A1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C255/00Carboxylic acid nitriles
    • C07C255/01Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
    • C07C255/32Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring
    • C07C255/35Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring the carbon skeleton being further substituted by halogen atoms, or by nitro or nitroso groups
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C255/00Carboxylic acid nitriles
    • C07C255/49Carboxylic acid nitriles having cyano groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
    • C07C255/50Carboxylic acid nitriles having cyano groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton to carbon atoms of non-condensed six-membered aromatic rings
    • C07C255/51Carboxylic acid nitriles having cyano groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton to carbon atoms of non-condensed six-membered aromatic rings containing at least two cyano groups bound to the carbon skeleton
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D213/00Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
    • C07D213/02Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
    • C07D213/04Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D213/60Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D213/61Halogen atoms or nitro radicals
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D213/00Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
    • C07D213/02Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
    • C07D213/04Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D213/60Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D213/78Carbon atoms having three bonds to hetero atoms, with at the most one bond to halogen, e.g. ester or nitrile radicals
    • C07D213/84Nitriles
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D239/00Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings
    • C07D239/02Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings
    • C07D239/24Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings having three or more double bonds between ring members or between ring members and non-ring members
    • C07D239/26Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings having three or more double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D239/00Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings
    • C07D239/02Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings
    • C07D239/24Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings having three or more double bonds between ring members or between ring members and non-ring members
    • C07D239/28Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings not condensed with other rings having three or more double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, directly attached to ring carbon atoms
    • C07D239/30Halogen atoms or nitro radicals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/654Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00Systems containing only non-condensed rings
    • C07C2601/02Systems containing only non-condensed rings with a three-membered ring
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00Systems containing only non-condensed rings
    • C07C2601/12Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/16Systems containing only non-condensed rings with a six-membered ring the ring being unsaturated
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1003Carbocyclic compounds
    • C09K2211/1007Non-condensed systems
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1018Heterocyclic compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1018Heterocyclic compounds
    • C09K2211/1025Heterocyclic compounds characterised by ligands
    • C09K2211/1029Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1018Heterocyclic compounds
    • C09K2211/1025Heterocyclic compounds characterised by ligands
    • C09K2211/1044Heterocyclic compounds characterised by ligands containing two nitrogen atoms as heteroatoms
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/50Oxidation-reduction potentials, e.g. excited state redox potentials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • H10K50/155Hole transporting layers comprising dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Definitions

  • the present invention relates to l,2,3-triylidenetris(cyanomethanylylidene)) cyclopropane substituted with aryl or heteroaryl groups, its use as p-dopant or hole injecting material in semiconducting electronic devices and to robust vacuum thermal evaporation (VTE) processes for manufacturing such devices.
  • VTE vacuum thermal evaporation
  • [3]-radialene compounds with cyanomethylidene groups substituted with electron withdrawing aryls or heteroaryls have been found to be specifically useful as p-dopants for common organic light emitting diode (OLED) hole transport materials (HTMs), see e.g. US 8 057 712 B2, herein incorporated as a reference.
  • OLED organic light emitting diode
  • HTMs hole transport materials
  • VTE vacuum thermal evaporation
  • the evaporation source loaded once with the material works as long as possible.
  • Contemporary hole transport matrix compounds used in OLEDs frequently sustain their exposition to their evaporation temperatures for one or two weeks without experiencing a significant change in their impurity profile.
  • an insufficient long-term thermal stability of the state-of-the-art dopants does very often represent a key limitation for the duration of a production campaign.
  • the first object is achieved by a process for preparation of an electrically doped semiconducting material comprising a [3] -radialene p-dopant or for preparation of an electronic device containing a layer comprising a [3] -radialene p-dopant, the process comprising the steps loading an evaporation source with the [3] -radialene p-dopant and
  • a 1 and A 2 are independently aryl- or heteroaryl-substituted cyanomethylidene groups
  • the aryl and/or heteroaryl is selected independently in A 1 and A 2 from 4-cyano-2, 3,5,6- tetrafluorphenyl; 2,3,5,6-tetrafluorpyridine-4-yl; 4-trifluormethyl-2,3,5,6-tetrafluorphenyl; 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifluormethyl)-l ,3-diazine-5-yl; 3,4-dicyano-2,5,6-trifluorphenyl; 2-cyano-3,5,6- trifluorpyridine-4-yl; 2-trifiuormethyl-3 J 5,6-triiluorpyridine-4-yl; 2,5,6-trifiuor-l,3-diazine-4- yl and 3-trifluormethyl-4-cyano-2,5,6-trifiuorpheny
  • aryl or heteroaryl is 2,3,5,6-tetrafiuorpyridine-4-yl; 2,4-bis(trifluormethyl)- 3 ,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifluormethyl)- l,3-diazine-5-yl; 3,4-dicyano-2,5,6-trifluorphenyl; 2-cyano-3,5,6-trifluorpyridine-4-yl; 2- trifluormemyl-3,5,6-trifluorpyridine-4-yl; 2,5,6-trifluor-l t 3-diazine-4-yl or 3-trifluormethyl-4- cyano-2,5,6-trifluorphenyl, provided that the heteroaryl in both A 1 and A 2 cannot be 2,3,5,6- tetrafluorpyridine-4-yl at the same time.
  • the vaporized compound (I) is, subsequently, either deposited in form of a neat layer, or co- deposited with an appropriate matrix material.
  • Neat layers of compound (I) are advantageously used as hole injection or charge generation layers, which are preferably adjacent to a layer comprising the matrix material.
  • the matrix material is preferably a hole transport matrix material comprising at least one hole transport matrix compound. Examples of hole transport matrix compounds which can be electrically doped with radialene p-dopants are well-known from earlier Novaled applications, including the applications cited herein.
  • the evaporation temperature in step (ii) is in the range of 100-300 °C, more preferably in the range of 125-275 °C, even more preferably in the range of 150-250 °C.
  • the pressure in step (ii) is preferably less than 10 "1 Pa, more preferably less than less than 10 "2 Pa, even more preferably less than 10 "3 Pa, most preferably less than 1 Q A Pa.
  • Duration of the evaporation step (ii) is, preferably, longer than 100 hours, more preferably longer than 150 hours, even more preferably longer than 200 hours.
  • the redox potential of the [3]-radialene p-dopant measured by cyclic voltammetry (CV) in acetonitrile (ACN) against redox couple ferro- cene/ferricenium (Fc/Fc 1 ) as standard, is preferably in the range from +0.10 V to +0.50 V, more preferably in the range from ⁇ 0.20 to + 0.40 V, even more preferably in the range from + 0.25 to + 0.35 V.
  • the first object is further achieved by the use of [3]-radialene compound selected from compounds having a structure according to formula (I)
  • a and A are independently aryl- or heteroaryl-substituted cyanomethylidene groups, the aryl and/or heteroaryl is selected independently in A 1 and A 2 from 4-cyano-2,3,5 5 6- tetrafluorphenyl; 2,3,5,6-tetrafluorpyridine-4-yl; 4-trifluormethyl-2,3 J 5,6-tetrafluorphenyl; 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl; 2,5-bis(trifiuormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifluormethyl)-l,3-diazine-5-yl; 3,4-dicyano-2,5,6-trifluorphenyl; 2-cyano-3,5,6- trifluorpyridine-4-yl; 2- fluormethyl-3 5 5,6-trifiuorpyridine-4-yl; 2,5,6-trifluor-l ,3-diazine
  • the first object is further achieved by a semiconducting material, semiconducting layer and / or electronic device comprising the radialene compound having formula (I), wherein the experimental OLED built on a glass substrate provided with an ITO anode, 10 nm thick hole injection transport layer (HIL) consisting of commercially available biphenyl-4-yl(9,9- diphenyl-9H-fluoren-2-yl)- [4-9-phenyl-9H-carbazol-3 -yl)phenyl] -amine (CAS number 1242056-42-3) doped with 8 weight % of the tested compound, 130 nm thick hole transport layer made of the same matrix compound as the HIL, 20 nm thick emitting layer made of commercially available host compound ABH113 with 3 wt % emitter NUBD 70 (both from the same supplier Sun Fine Chemicals, Korea), 36 nm thick electron transport layer made of (3-(dibenzo[c,h]acridin-7-yl)phenyl)dipheny
  • the semiconducting material or semiconducting layer comprising the compound having formula (I) is comprised between a first electrode and a second electrode.
  • the first electrode is anode and the second electrode is cathode.
  • the layer comprising the compound of formula (I) is adjacent to the anode.
  • the layer comprising the compound of formula (I) serves as a charge generating layer.
  • the electronic device is an OLED, in one of preferred embodiments, a tandem OLED.
  • a 1 and A 2 are independently aryl- or heteroaryl-substituted cyanomethylidene groups, the aryl and/or heteroaryl is selected independently in A 1 and A 2 from 4-cyano-2,3,5,6- tetrafluorphenyl ; 2,3,5 ,6-tetrafluorpyridme-4-yl; 4-trifluoimethyl-2,3, 5,6-tetrafluorphenyl ; 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifluormethyl)-l,3-diazine-5-yl; 3,4-dicyano-2,5,6-t ⁇ ifluo hen l; 2-cyano-3 ,5,6- trifluorpyridine-4-yl; 2-trifluormemyl-3,5,6-trifluorpyridine-4-yl; 2,5,6-trifluor
  • inventive design of compound (I) enables that in embodiments of the inventive process, wherein the compound (I) is co-evaporated and subsequently co-deposited with a hole transport matrix material, for any hole transport matrix compound having the vaporization temperature in the range 100-300 °C and redox potential in the range 0.00-0.50 V vs Fc + /Fc reference redox pair in acetonitrile, a thermally robust compound (I) with sufficient p-doping strength and with vaporization temperature differing less than 50 °C from the vaporization temperature of the chosen hole transport matrix compound can be selected.
  • the third object is achieved by process for synthesis of a [3]-radialene compound having a structure according to formula (I) wherein
  • a 1 and A 2 are independently aryl- or heteroaryl-substituted cyanomethylidene groups, the aryl and/or heteroaryl is selected independently in A and A from 4-cyano-2,3,5,6- tetrafluorphenyl; 2,3,5,6-tetrafluorpyridine-4-yl; 4-trifiuormethyl-2,3,5,6-tetrafluorphenyl; 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3 s 4,6-trifluo henyl; 2,4,6-tris(trifluormethyl)-l,3-diazine-5-yl; 3,4-dicyano-2,5,6-trifluorphenyl; 2-cyano-3,5,6- trifluorpyridine-4-yl; 2-trifluormethyl-3 ,5,6-trifluorpyridine-4-yl; 2,5,6-trifluor- 1 ,3 -dia
  • the saturated carboxylic acid does comprise only single (sigma) carbon-carbon bonds.
  • the saturated halogenated carboxylic acid may be aliphatic or alicyclic. More preferred is the saturated halogenated carboxylic acid which is liquid at 20 G C, even more preferred is the saturated halogenated carboxylic acid which is liquid at 0°C.
  • the saturated halogenated carboxylic acid is a saturated perhalogenated carboxylic acid.
  • the saturated perhalogenated carboxylic acid is trifluoroacetic acid.
  • the concentration of the saturated halogenated carboxylic acid is in the range 5-95 wt%, more preferably in the range 10-90 wt%, even more preferably in the range 15-85 wt%, most preferably in the range 20-80 wt%.
  • the solvent may further comprise a saturated carboxylic acid and / or an inorganic acid.
  • the saturated carboxylic acid may be acetic acid, the inorganic acid may be nitric acid.
  • an oxidant is present in the last synthesis step, wherein compound (I) is formed.
  • nitric acid serves also as the oxidant.
  • nitric acid comprises water.
  • the last synthesis step, wherein compound (I) is formed is substantially free of a free halogen, as described in WO2015/007729.
  • the reaction temperature in the last synthesis step is in the range 0-100 °C, more preferably in the range 10-90 °C, even more preferably in the range 15-85 °C, most preferably in the range 20-80 C C. Particularly high yield and / or purity is achieved when using this process.
  • [3]-radialene p-dopants known from US 8 057 712 B2 were proven as a very successful p- doping concept, especially for OLED displays, as may be taken from further documents like WO2010/075836, WO2010/132236, WO2011/134458, WO2014/009310, US2012/223296, WO2013/135237, WO2014/037512, WO2014/060526.
  • the energy level of the lowest unoccupied molecular orbital (LUMO) of the dopant as well as its optimum evaporation temperature required for the optimum fit with the chosen hole transport matrix and with properties of materials chosen for adjacent layers may vary in a quite broad range.
  • the common denominator for selection of applicable structures was the requirement of high long-term thermal stability of the offered p-dopant, allowing reasonably long production campaign with the evaporation source loaded with the compound.
  • the new structural motives consist in new substitution patterns of the aryl or heteroaryl sub- stituent in the formula (I). Further research showed that by combining newly identified advantageous structural features in one radialene molecule together or combining them with selected substitution patterns already known from the previous art allows for the desired broad series of thermally robust p-dopants with various strength and volatility.
  • the dopant strength expressed as redox potential of the compound measured by cyclic voltammetry at standard conditions in acetonitrile solution against Fc Fc + reference redox couple can be within 10 % accuracy derived from redox potentials of parent symmetric radialene compounds comprising the aryl/heteroaryl substitution patterns combined in the resulting asymmetric structure.
  • each (hetero)aryl-substituted cyanomethylidene structural unit in the [3]- radialene molecule behaves as an independent moiety contributing to overall redox potential by a constant increment which does not depend on the substitution pattern of the (hetero)aryl substituents attached to remaining two corners of the [3]-radialene core. This fact enables an easy prediction of redox potentials for asymmetric structures on the basis of measured redox potentials for "parent" symmetric structures comprising corresponding substitution patterns.
  • the redox potential of any asymmetric structure falling within formula (I) can be estimated as a linear combination of increments from structural moieties of corresponding symmetric structures.
  • the technical effect of the invention can be summarized in three points:
  • the improved radialene p-dopants according to the invention retain good performance of the already known compounds in electronic devices like OLED displays and in semiconducting materials for them and enable robust VTE processes for manufacturing organic electronic devices comprising radialene p-dopants, applicable on the industrial scale.
  • the invention enables adjusting, independently, the doping strength as well as the volatility of the dopant to the dopability and to the volatility of a chosen matrix, in a sufficiently broad range of their values.
  • the inventive process for manufacturing of the inventive p-dopants enables their manufacturing in an industrial scale, with more robust quality and higher yields in comparison with the state of the art.
  • the new compound of formula (I) is used instead of a state-of-art p- dopant having smaller redox potential, the stronger p-dopant can be used in lower concentration. It provides additional degrees of freedom for designers of electronic devices, e.g. in terms of lower optical absorption of doped layers which can be provided using the inventive materials in comparison with state-of-art p-dopants.
  • T tc is the evaporation temperature of the compound in a high- vacuum test chamber, provided with a temperature sensor measuring the temperature at the bottom of vaporization crucible filled with a standard amount of the tested compound. The temperature corresponding to the onset of vaporization measured by a detector put above the crucible is reported in the table.
  • the second parameter, T99 , 5 / 0 corresponds to the temperature at which the TGA curve showed a 0.5 % weight loss of the tested compound at normal pressure and 10 K/min heating rate, and it corresponds to the start of compound evaporation at normal pressure.
  • stands for the value of electrochemical redox potential derived from the cyclic voltammetry curves measured in acetonitrile solutions of the tested compounds, against reference redox couple Fc/Fc + as a standard. All the tested compounds showed reversible redox behavior under these conditions. It was found that the arithmetic average calculated from the values T tc and T99. 5 % for a specific material fits well with the vaporization temperature observed for this material in mass production vaporization sources. For compounds, wherein both values T t0 and T99. 5 % were available, the estimation of vaporization temperature in the industrial vaporization source T est reported in the table corresponds to this arithmetic average.
  • the Table 1 shows that properties of new compounds fulfil the object of the invention, providing a broad spectrum of available redox potentials and vaporization temperatures. For the tested compounds, reasonable long-term thermal stability was proven at vaporization temperatures expected in industrial VTE sources.
  • inventive compounds can be advantageous also in processes which are developed as alternatives for VTE, especially in solution processing. It was proven that the new compounds provide not only broad spectrum of volatility but also broad spectrum of solubility in various solvents.
  • Analogous betaine intermediates C3-B, Al-B, A2-B, A3-B, A4-B, A5-B, A6-B, A7-B and A8-B which correspond in their substitution to symmetrical radialenes C3, Al, A2, A3, A4, A5, A6, A7 and A8 may be prepared analogously to C2-B and C4-B.
  • Precursor C5-P (4.82g) was dissolved in glacial acetic acid (67 mL) and aqueous nitric acid (65 % w/w, 67 mL) was added dropwise at room temperature. The solution turned from black/green to red/orange. After stirring for 16 h, an orange precipitate formed and the mixture was cooled on ice. Water (70 mL) was added dropwise and the mixture was stirred for 15 min. Filtration gave an orange solid which was washed with cold water (10 x 40 mL) until the filtrate is neutral. Drying in air and in oil pump vacuum gave 3.25 g of a solid which was dissolved in hot 1-chlorobutane (100 °C, 400 mL).
  • the solution was cooled to room temperature and filtered through a glass frit.
  • the filtrate was concentrated to approx. 50 mL to give a suspension comprising an orange solid.
  • the product was obtained as an orange powder (2.62 g) and further purified by sublimation in high vacuum.
  • Precursor C6-P (6.29 g) was dissolved in 83 mL glacial acetic acid and 83 mL aqueous nitric acid (65 % w/w) were added dropwise at room temperature. The solution turned from black- green to red-orange. After stirring for 16 h, an orange precipitate has formed and the mixture was cooled on ice. 100 mL water were added dropwise and the mixture was stirred for 15 min. Filtration gave an orange solid which was washed with cold water (8 x 30 mL) until the filtrate was neutral. After drying in air and in oil pump vacuum, the product was obtained as an orange powder (3.07 g) which was further purified by sublimation in high vacuum.
  • UV-Vis (ACN): X msx 454 nm.
  • Step 1 potassium l-cyano-l-(2-cyano-3 ⁇ 5,6-trifluoropyridin-4-yl)-2-ethoxy-2-oxoethan-l-ide (ester intermediate A3-eE)
  • Step 3 (Z)-4-(cyano(2-(cyano(2,3,5,6-tefrafluoro-4-(trifluoromemyl)-phenyl)methyl)-3- (cyano(2,3,5,6-tetrafluoro-4-(rrifluoromethyl)phenyl)-methylene)cycloprop- 1 -en- 1 - yl)methyl)-3,5,6-trifluoropicolinonitrile
  • Step 4 (2Z,2 ⁇ )-2,2 , -((E) -(cyano(2-cymo-3,5,6-trifiuoropyridin-4-yl)methylene)cyclo- propane- 1 ,2 -diylidene)bis(2-(2,3 ,5 ,6-tetrafluoro -4 -(trifluoromethyl)-phenyl)acetonitrile) (radialene compound B5)
  • Step 3 4-(cyano(2-(cyano(2,3,5-trifluoro-4,6-bis(1rifluoromethyl)phenyl)-methyl)-3- (cyano(4-cyano-2,3 , 5 ,6-tetrafluorophenyl)methyl)cycloprop-2-en- 1 -y lidene)-methyl)-2,3 , 5,6- tetrafluorobenzonitrile
  • Step 4 (4 5 4'-((lZ,l'E)-((E)-3-(cyano(3,5,6-trifluoro-2,4-bis(trifluoromethyl)phenyl) meth- ylene)cyclopropane-l,2-diylidene)bis(cyanomethanylylidene))bis(2,3,5,6- tetrafluorobenzonitrile)
  • the wet raw material was dried in a vacuum drying cabinet at 40 °C for 3 h and then at ambient temperature in high vacuum (10 "2 mbar). The dried material was then recrystallized from 3:2 (v/v) mixture of l-chlorobutane and cyclohex- ane.
  • IR ATR, cm -1 ): 2185, 1738, 1646, 1606, 1539, 1461, 1442, 1377, 1281, 1198, 1155, 1115,
  • a pressure tube with a screw cap was charged with 5.5 g (17.7 mmol) A7-tbE and 60 mL dioxane. To this mixture, 17.7 mL 4 M anhydrous HCl in dioxane were added and the tube was sealed. The reaction mixture was heated for 4 h to 100 °C and subsequently poured into 100 mL water. This mixture was extracted with 3 x 50 mL EtOAc and the collected organic layers washed with 50 mL water and 50 mL brine. After drying with Na 2 SC «4, the solvent was removed and the crude product was purified by bulb-to-bulb distillation (140 °C @ 3x10 "3 mbar).
  • IR (ATR, cm “1 ): 2269, 1609, 1462, 1402, 1243, 1105, 1050, 1017, 928, 769, 725.
  • Step 3 (Z)-2-(2-(cyano(2,3,5,6-tetrafluoro-4-(trifluoromethyl)phenyl)-methyl)-3- (cyano(2,3 ,5 ,6-tetrafluoro-4-(trifluoromethyl)phenyl)methylene)cycloprop- 1 -en- 1 -yl)-2- (2,5,6-trifluoropyrimidin-4-yl)acetonitrile
  • Step 4 (2Z,2 ⁇ -2,2'-((E)-3-(cyano(2,5,6-trifluoropyrimidin ⁇
  • the crude product was recrystallized from a mixture of cyclohexane and chlorohexane.
  • HIL hole injection transport layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Optics & Photonics (AREA)
  • Pyridine Compounds (AREA)

Abstract

The present invention relates to a process for preparation of an electrically doped semiconducting material comprising a [3]-radialene p-dopant or for preparation of an electronic device containing a layer comprising a [3]-radialene p-dopant, the process comprising the steps : (i) loading an evaporation source with the [3]-radialene p-dopant; and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure, wherein the [3]-radialene p-dopant is selected from compounds having a structure according to formula (I) wherein A1 and A2 are independently aryl- or heteroaryl- substituted cyanomethylidene groups, the aryl and/or heteroaryl is selected independently in A1 and A2 from 4-cyano-2,3,5,6-tetrafluorphenyl,2,3,5,6-tetrafluorpyridine-4-yl, 4-trifluormethyl-2,3,5,6-tetrafluorphenyl, 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl, 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl, 2,4,6-tris(trifluormethyl)-1,3-diazine-5-yl, 3,4-dicyano-2,5,6-trifluorphenyl, 2-cyano-3,5,6-trifluorpyridine-4-yl, 2-trifluormethyl-3,5,6-trifluorpyridine-4-yl, 2,5,6-trifluor-1,3-diazine-4-yl and 3-trifluormethyl-4-cyano-2,5,6-trifluophenyl), and at least one aryl or heteroaryl is 2,3,5,6-tetrafluorpirydine-4-yl, 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyI, 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl, 2,4,6-tris(trifluormethyl)-1,3-diazine-5-yl, 3,4-dicyano-2,5,6-trifluorphenyl, 2-cyano-3,5,6-trifluorpyridine-4-yl, 2-trifluormethyl-3,5,6-trifluorphenyl, provided that the heteroaryl in both A1 and A2 cannot be 2,3,5,6-tetrafluorpyridine-4-yl at the same time, respective [3]-radialene compounds, and semiconducting materials and layer, and electronic devices comprising said compounds.

Description

Substituted l,2,3-triylidenetris(cyanomethanylylidene)) cyclopropanes for VTE, electronic devices and semiconducting materials using them
The present invention relates to l,2,3-triylidenetris(cyanomethanylylidene)) cyclopropane substituted with aryl or heteroaryl groups, its use as p-dopant or hole injecting material in semiconducting electronic devices and to robust vacuum thermal evaporation (VTE) processes for manufacturing such devices.
[3]-radialene compounds with cyanomethylidene groups substituted with electron withdrawing aryls or heteroaryls have been found to be specifically useful as p-dopants for common organic light emitting diode (OLED) hole transport materials (HTMs), see e.g. US 8 057 712 B2, herein incorporated as a reference. For an industrial production of electronic devices and semiconducting materials utilizing these compounds, mostly vacuum thermal evaporation (VTE) processes are used. In the state-of-the-art evaporation sources and at pressures below 10"4 Pa used in them, presently used materials vaporize mostly at temperatures between 150 and 300 °C. For the sake of effectivity, it is preferred that the evaporation source loaded once with the material works as long as possible. Contemporary hole transport matrix compounds used in OLEDs frequently sustain their exposition to their evaporation temperatures for one or two weeks without experiencing a significant change in their impurity profile. In mass production of organic electronic devices comprising electrical dopants, an insufficient long-term thermal stability of the state-of-the-art dopants does very often represent a key limitation for the duration of a production campaign.
It is therefore an object of the present invention to provide an improved process for manufacturing electronic devices comprising radialene p-dopants and improved semiconducting materials, layers and /or electronic devices preparable by the improved process. Another object of the invention is providing improved radialene p-dopants for the improved process. Still another object of the invention is providing an improved process for preparation of the improved radialene p-dopants.
Summary of the invention
The first object is achieved by a process for preparation of an electrically doped semiconducting material comprising a [3] -radialene p-dopant or for preparation of an electronic device containing a layer comprising a [3] -radialene p-dopant, the process comprising the steps loading an evaporation source with the [3] -radialene p-dopant and
evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure,
wherein the [3]-radialene p-dopant is selected from compounds having a structure according to formula (I)
Figure imgf000003_0001
wherein A1 and A2 are independently aryl- or heteroaryl-substituted cyanomethylidene groups,
the aryl and/or heteroaryl is selected independently in A1 and A2 from 4-cyano-2, 3,5,6- tetrafluorphenyl; 2,3,5,6-tetrafluorpyridine-4-yl; 4-trifluormethyl-2,3,5,6-tetrafluorphenyl; 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifluormethyl)-l ,3-diazine-5-yl; 3,4-dicyano-2,5,6-trifluorphenyl; 2-cyano-3,5,6- trifluorpyridine-4-yl; 2-trifiuormethyl-3J5,6-triiluorpyridine-4-yl; 2,5,6-trifiuor-l,3-diazine-4- yl and 3-trifluormethyl-4-cyano-2,5,6-trifiuorphenyl,
and at least one aryl or heteroaryl is 2,3,5,6-tetrafiuorpyridine-4-yl; 2,4-bis(trifluormethyl)- 3 ,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifluormethyl)- l,3-diazine-5-yl; 3,4-dicyano-2,5,6-trifluorphenyl; 2-cyano-3,5,6-trifluorpyridine-4-yl; 2- trifluormemyl-3,5,6-trifluorpyridine-4-yl; 2,5,6-trifluor-lt3-diazine-4-yl or 3-trifluormethyl-4- cyano-2,5,6-trifluorphenyl, provided that the heteroaryl in both A1 and A2 cannot be 2,3,5,6- tetrafluorpyridine-4-yl at the same time.
The vaporized compound (I) is, subsequently, either deposited in form of a neat layer, or co- deposited with an appropriate matrix material. Neat layers of compound (I) are advantageously used as hole injection or charge generation layers, which are preferably adjacent to a layer comprising the matrix material. The matrix material is preferably a hole transport matrix material comprising at least one hole transport matrix compound. Examples of hole transport matrix compounds which can be electrically doped with radialene p-dopants are well-known from earlier Novaled applications, including the applications cited herein. Preferably, the evaporation temperature in step (ii) is in the range of 100-300 °C, more preferably in the range of 125-275 °C, even more preferably in the range of 150-250 °C.
The pressure in step (ii) is preferably less than 10"1 Pa, more preferably less than less than 10"2 Pa, even more preferably less than 10"3 Pa, most preferably less than 1 QA Pa.
Duration of the evaporation step (ii) is, preferably, longer than 100 hours, more preferably longer than 150 hours, even more preferably longer than 200 hours.
To achieve the sufficient doping strength, the redox potential of the [3]-radialene p-dopant, measured by cyclic voltammetry (CV) in acetonitrile (ACN) against redox couple ferro- cene/ferricenium (Fc/Fc1) as standard, is preferably in the range from +0.10 V to +0.50 V, more preferably in the range from ÷ 0.20 to + 0.40 V, even more preferably in the range from + 0.25 to + 0.35 V.
The first object is further achieved by the use of [3]-radialene compound selected from compounds having a structure according to formula (I)
Figure imgf000004_0001
wherein A and A are independently aryl- or heteroaryl-substituted cyanomethylidene groups, the aryl and/or heteroaryl is selected independently in A1 and A2 from 4-cyano-2,3,556- tetrafluorphenyl; 2,3,5,6-tetrafluorpyridine-4-yl; 4-trifluormethyl-2,3J5,6-tetrafluorphenyl; 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl; 2,5-bis(trifiuormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifluormethyl)-l,3-diazine-5-yl; 3,4-dicyano-2,5,6-trifluorphenyl; 2-cyano-3,5,6- trifluorpyridine-4-yl; 2- fluormethyl-355,6-trifiuorpyridine-4-yl; 2,5,6-trifluor-l ,3-diazine-4- yl and 3-1xifluomethyl-4-cyano-2,5,6-triftuorphenyl, and at least one aryl or heteroaryl is 2s3,5,6-tetrafiuorpyridine-4-yl; 2,4-bis(trifluormethyl)- 3,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifluormethyl)- l,3-diazine-5-yl; 3,4-dicyano-2J5,6-trifluorphenyl; 2^3ηο-3,5,6-ηΊί1υοι νπάΐηε-4^1; 2- trifluormethyl-3,5,6-trifluorpyridine-4-yl; 2,5,6-trifiuor-l,3-diazine-4-yl or 3-trifluormethyl-4- cyano-2,5,6-trifluorphenyl, provided that the heteroaryl in both A and A cannot be 2,3,5,6- tetrafluorpyridine-4-yl at the same time, as a p-dopant or hole injection material in electronic devices.
The first object is further achieved by a semiconducting material, semiconducting layer and / or electronic device comprising the radialene compound having formula (I), wherein the experimental OLED built on a glass substrate provided with an ITO anode, 10 nm thick hole injection transport layer (HIL) consisting of commercially available biphenyl-4-yl(9,9- diphenyl-9H-fluoren-2-yl)- [4-9-phenyl-9H-carbazol-3 -yl)phenyl] -amine (CAS number 1242056-42-3) doped with 8 weight % of the tested compound, 130 nm thick hole transport layer made of the same matrix compound as the HIL, 20 nm thick emitting layer made of commercially available host compound ABH113 with 3 wt % emitter NUBD 70 (both from the same supplier Sun Fine Chemicals, Korea), 36 nm thick electron transport layer made of (3-(dibenzo[c,h]acridin-7-yl)phenyl)diphenylphosphine oxide and lithium 8-hydroxyquino- linolate (LiQ, 1:1 w/w), and 30 nm thick silver cathode, as described in the device example below, may be excluded, as well as may be excluded the doped material consisting of bi- phenyl-4-yl(9,9-diphenyl-9H-fluoren-2-yl)-[4-9-phenyl-9H-carbazol-3-yl)phenyl]-arnine doped with 8 weight % of any compound selected from compounds Al, A2, A3, A4, A5, A6, A7, A8 and compounds Bl, B2, B3, B4, B5, B6, B7 as listed below and / or the 10 nm thick layer of such doped material.
Preferably, the semiconducting material or semiconducting layer comprising the compound having formula (I) is comprised between a first electrode and a second electrode. Also preferably, the first electrode is anode and the second electrode is cathode. In one of preferred embodiments, the layer comprising the compound of formula (I) is adjacent to the anode. In another preferred embodiment, the layer comprising the compound of formula (I) serves as a charge generating layer. Also preferably, the electronic device is an OLED, in one of preferred embodiments, a tandem OLED.
The second object is achieved by a [3]-radialene compound having a structure according to formula (I)
Figure imgf000006_0001
wherein
A1 and A2 are independently aryl- or heteroaryl-substituted cyanomethylidene groups, the aryl and/or heteroaryl is selected independently in A1 and A2 from 4-cyano-2,3,5,6- tetrafluorphenyl ; 2,3,5 ,6-tetrafluorpyridme-4-yl; 4-trifluoimethyl-2,3, 5,6-tetrafluorphenyl ; 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifluormethyl)-l,3-diazine-5-yl; 3,4-dicyano-2,5,6-tτifluo hen l; 2-cyano-3 ,5,6- trifluorpyridine-4-yl; 2-trifluormemyl-3,5,6-trifluorpyridine-4-yl; 2,5,6-trifluor-l ,3-diazine-4- yl and 3-trifluormethyl-4-cyano-2,5,6-trifluorphenyl, and at least one aryl or heteroaryl is 2,3,5,6-tetrafluorpyridine-4-yl; 2,4-bis(trifluormethyl)- 3,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifluormethyl)- l,3-diazine-5-yl; S^-ch^yano^jS^-trifluorphenyl; 2-cyano-3,5,6-trifiuorpyridine-4-yl; 2- trifluonnethyl-3,5,6-trifiuorpyridine-4-yl; 2,5,6-trifluor-l, 3-diazine-4-yl or 3-trifluormethyl-4- cyano-2,5,6-trifluorphenyl, provided that the heteroaryl in both A1 and A2 cannot be 2,3,5,6- tetrafiuorpyridine-4-yl at the same time.
The inventive design of compound (I) enables that in embodiments of the inventive process, wherein the compound (I) is co-evaporated and subsequently co-deposited with a hole transport matrix material, for any hole transport matrix compound having the vaporization temperature in the range 100-300 °C and redox potential in the range 0.00-0.50 V vs Fc+/Fc reference redox pair in acetonitrile, a thermally robust compound (I) with sufficient p-doping strength and with vaporization temperature differing less than 50 °C from the vaporization temperature of the chosen hole transport matrix compound can be selected.
The third object is achieved by process for synthesis of a [3]-radialene compound having a structure according to formula (I)
Figure imgf000007_0001
wherein
A1 and A2 are independently aryl- or heteroaryl-substituted cyanomethylidene groups, the aryl and/or heteroaryl is selected independently in A and A from 4-cyano-2,3,5,6- tetrafluorphenyl; 2,3,5,6-tetrafluorpyridine-4-yl; 4-trifiuormethyl-2,3,5,6-tetrafluorphenyl; 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3s4,6-trifluo henyl; 2,4,6-tris(trifluormethyl)-l,3-diazine-5-yl; 3,4-dicyano-2,5,6-trifluorphenyl; 2-cyano-3,5,6- trifluorpyridine-4-yl; 2-trifluormethyl-3 ,5,6-trifluorpyridine-4-yl; 2,5,6-trifluor- 1 ,3 -diazine-4- yl and 3-trifluormethyl-4-cyano-2,5,6-trifluorphenyl, and at least one aryl or heteroaryl is 2,3,5,6-tetrafluorpyridine-4-yl; 2,4-bis(trifluormethyl)- 3,5,6-trifluorphenyl; 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl; 2,4,6-tris(trifiuormethyl)- l,3-diazine-5-yl; 3,4-dicyano-2,5,6-trifluorphenyl; 2-cyano-3,5,6-trifluorpyridine-4-yl; 2- trifluormemyl-3s5,6-trifluorpyridine-4-yl; 2f5,6-trifluor-l,3-diazine-4-yl or 3-trifluormethyl-4- cyano-255,6-trifluorphenyl, provided that the heteroaryl in both A1 and A2 cannot be 2,3,5,6- tetrafiuorpyridine-4-yl at the same time, wherein the last synthesis step, in which the compound of formula (I) is formed, is carried out in a solvent comprising at least one saturated halogenated carboxylic acid. It is to be understood that the saturated carboxylic acid does comprise only single (sigma) carbon-carbon bonds. The saturated halogenated carboxylic acid may be aliphatic or alicyclic. More preferred is the saturated halogenated carboxylic acid which is liquid at 20GC, even more preferred is the saturated halogenated carboxylic acid which is liquid at 0°C. In one embodiment, the saturated halogenated carboxylic acid is a saturated perhalogenated carboxylic acid. In a preferred embodiment, the saturated perhalogenated carboxylic acid is trifluoroacetic acid.
Preferably, the concentration of the saturated halogenated carboxylic acid is in the range 5-95 wt%, more preferably in the range 10-90 wt%, even more preferably in the range 15-85 wt%, most preferably in the range 20-80 wt%. The solvent may further comprise a saturated carboxylic acid and / or an inorganic acid. The saturated carboxylic acid may be acetic acid, the inorganic acid may be nitric acid.
Preferably, an oxidant is present in the last synthesis step, wherein compound (I) is formed. Also preferably, nitric acid serves also as the oxidant. Also preferably, nitric acid comprises water. Also preferably, the last synthesis step, wherein compound (I) is formed, is substantially free of a free halogen, as described in WO2015/007729. Also preferably, the reaction temperature in the last synthesis step is in the range 0-100 °C, more preferably in the range 10-90 °C, even more preferably in the range 15-85 °C, most preferably in the range 20-80 CC. Particularly high yield and / or purity is achieved when using this process.
Brief description of drawings
Fig. 1 shows the correlation between the temperature T99.5 of 0.5 % weight loss in TGA analysis at normal pressure and the rate onset temperature measured in high vacuum test chamber Ttc (in the graphassigned as Tsub); the correlation expressed as linear relationship y = 0.7326*T99.5% - 50.084 was used for the estimation of the values Ttc for the compounds, wherein the experimental value was not yet available.
Detailed description of the invention
[3]-radialene p-dopants known from US 8 057 712 B2 were proven as a very successful p- doping concept, especially for OLED displays, as may be taken from further documents like WO2010/075836, WO2010/132236, WO2011/134458, WO2014/009310, US2012/223296, WO2013/135237, WO2014/037512, WO2014/060526.
Depending on the device design and specific compounds chosen as matrices for hole transporting, electron blocking and and or emitting layers in which or adjacent to the p-dopants might be used, the energy level of the lowest unoccupied molecular orbital (LUMO) of the dopant as well as its optimum evaporation temperature required for the optimum fit with the chosen hole transport matrix and with properties of materials chosen for adjacent layers may vary in a quite broad range.
This variability was the primary incentive for further development of new compounds with the goal to offer a broad spectrum of [3]-radialene p-dopants, enabling to offer for each particular case a dopant fitting well to highest occupied molecular orbital (HOMO) energy level of the chosen matrix as well as to evaporation temperature of this matrix in industrial evaporation sources.
The common denominator for selection of applicable structures was the requirement of high long-term thermal stability of the offered p-dopant, allowing reasonably long production campaign with the evaporation source loaded with the compound.
In candidate compounds, the fulfillment of this requirement has been checked by especially designed "ampulla tests". Samples of each particular compound divided into quartz ampoules and sealed under vacuum were kept in a thermostat at various temperatures for times in the range 100 - 350 hours. Changes in sample impurity profile were checked by spectroscopic and chromatographic methods specifically designed for [3]-radialene p-dopants. Finally, specific structural motives enabling stable purity for at least 100 hour processing time at evaporation temperature of the compound were identified.
The new structural motives consist in new substitution patterns of the aryl or heteroaryl sub- stituent in the formula (I). Further research showed that by combining newly identified advantageous structural features in one radialene molecule together or combining them with selected substitution patterns already known from the previous art allows for the desired broad series of thermally robust p-dopants with various strength and volatility.
With regard to formula (I), all Al's are equal, but A1 and A2 can be the same or different from each other.
It should be understood that for the sake of brevity, all compounds of formula (I) having sub- stitution pattern in structural moieties A and A equal are in this application assigned as "symmetric". Similarly, all radialene compounds having different substitution patterns in structural moieties A1 and A2, are assigned as "asymmetric". This assignment does not encompass the possible geometrical isomers formed by various combinations of E- and Z- substitution on exocyclic double bonds. It is supposed that despite exemplary structures depicted for inventive and comparative radialene compounds prevail, the materials synthesized by described methods may comprise all possible geometric isomers.
Similarly, for the sake of brevity, all possible tautomeric forms and geometric isomers of ester intermediates, betaine intermediates and radialene precursors (reduced forms of desired radialene compounds) are simplified by depicted exemplary structures which, however, in fact represent all isomers and tautomers that are possible in each individual case. It was found that for any of the tested structures of formula (I) comprising two different aryl and/or heteroaryl substituents in the structural moieties A and A , the dopant strength expressed as redox potential of the compound measured by cyclic voltammetry at standard conditions in acetonitrile solution against Fc Fc+ reference redox couple, can be within 10 % accuracy derived from redox potentials of parent symmetric radialene compounds comprising the aryl/heteroaryl substitution patterns combined in the resulting asymmetric structure.
It was found that each (hetero)aryl-substituted cyanomethylidene structural unit in the [3]- radialene molecule behaves as an independent moiety contributing to overall redox potential by a constant increment which does not depend on the substitution pattern of the (hetero)aryl substituents attached to remaining two corners of the [3]-radialene core. This fact enables an easy prediction of redox potentials for asymmetric structures on the basis of measured redox potentials for "parent" symmetric structures comprising corresponding substitution patterns.
In other words, the redox potential of any asymmetric structure falling within formula (I) can be estimated as a linear combination of increments from structural moieties of corresponding symmetric structures.
The achievement of the object is shown by comparison of properties of inventive compounds with comparative compounds known from the above cited previous art documents or available on the basis of their combined teaching.
The technical effect of the invention can be summarized in three points: The improved radialene p-dopants according to the invention retain good performance of the already known compounds in electronic devices like OLED displays and in semiconducting materials for them and enable robust VTE processes for manufacturing organic electronic devices comprising radialene p-dopants, applicable on the industrial scale.
Specifically, the invention enables adjusting, independently, the doping strength as well as the volatility of the dopant to the dopability and to the volatility of a chosen matrix, in a sufficiently broad range of their values. Moreover, the inventive process for manufacturing of the inventive p-dopants enables their manufacturing in an industrial scale, with more robust quality and higher yields in comparison with the state of the art.
Additionally, wherever the new compound of formula (I) is used instead of a state-of-art p- dopant having smaller redox potential, the stronger p-dopant can be used in lower concentration. It provides additional degrees of freedom for designers of electronic devices, e.g. in terms of lower optical absorption of doped layers which can be provided using the inventive materials in comparison with state-of-art p-dopants.
Exemplary structures of comparative compounds are
Figure imgf000011_0001
Figure imgf000012_0001
Figure imgf000013_0001
Figure imgf000014_0001
mp (°C) 1 179 183 - - 206 197 - deTr 360 . 365 - l~333 228 352
Ttc rc) 100 77 ~231 ' - 111 - -
T99.5% ra 211 1 164 382 - "235 ~1 Γ23Ο 302
r156 120 j 306 - 173 ! 172 i 231
E° (V) i 0,18 0.38 j 0.33 j 0.39 0.34 1 0.46 1 0.29
Figure imgf000015_0001
Explanations to the table:
Melting point (mp) temperatures were measured by DSC at heating rate 10 K/min, the reported values correspond the peak temperature for the observed melting endotherm on the DSC curve. Tdec stands for the peak temperature of the decomposition peak on the TGA/DSC curve. Two experimentally measured parameters were exploited for estimation of vaporization temperatures that are to be expected in industrial VTE sources used in mass production of OLED displays. The first one, Ttc, is the evaporation temperature of the compound in a high- vacuum test chamber, provided with a temperature sensor measuring the temperature at the bottom of vaporization crucible filled with a standard amount of the tested compound. The temperature corresponding to the onset of vaporization measured by a detector put above the crucible is reported in the table. The second parameter, T99,5 /0 , corresponds to the temperature at which the TGA curve showed a 0.5 % weight loss of the tested compound at normal pressure and 10 K/min heating rate, and it corresponds to the start of compound evaporation at normal pressure. E° stands for the value of electrochemical redox potential derived from the cyclic voltammetry curves measured in acetonitrile solutions of the tested compounds, against reference redox couple Fc/Fc+ as a standard. All the tested compounds showed reversible redox behavior under these conditions. It was found that the arithmetic average calculated from the values Ttc and T99.5% for a specific material fits well with the vaporization temperature observed for this material in mass production vaporization sources. For compounds, wherein both values Tt0 and T99.5% were available, the estimation of vaporization temperature in the industrial vaporization source Test reported in the table corresponds to this arithmetic average.
For the compounds, wherein only T99.5% was available, the Test was calculated the same way, only the Tte used in the calculation was the value y calculated from the observed T99.5% value using the linear relationship y = 0.7326*T99.5% - 50.084 derived from the correlation between T99.5% and Ttc shown in Fig.1.
The Table 1 shows that properties of new compounds fulfil the object of the invention, providing a broad spectrum of available redox potentials and vaporization temperatures. For the tested compounds, reasonable long-term thermal stability was proven at vaporization temperatures expected in industrial VTE sources.
It is of course not excluded that the inventive compounds can be advantageous also in processes which are developed as alternatives for VTE, especially in solution processing. It was proven that the new compounds provide not only broad spectrum of volatility but also broad spectrum of solubility in various solvents.
Examples
Synthesis examples
Syntheses of symmetric compounds are based on procedures described in patent US 8 057 712 and application EP13176542.
Syntheses of asymmetrically substituted derivatives are based on procedures described in US 3 963 769 and in J.Am.Chem.Soc. 1976, volume 98, p. 610-611.
Betaine precursors
Betaine C2-B
A 500 mL Schlenk flask was charged with tetrachlorocyclopropene (8.30 g, 46.7 mmol) and 2-(4-cyano-2,3,5,6-tetrafluorophenyl)acetonitrile (C2-A, 20.0 g, 93.4 mmol) and dry di- chloromethane (DC . 160 mL) were added. The mixture was stirred and cooled to -30 °C and triethyl amine (30.7 g, 304 mmol) was added dropwise over 30 min. The mixture was allowed to warm to room temperature over 1 h. Water (24 mL) was added dropwise and the mixture was filtered. The solid was washed with DCM (3 x 50 mL), MeOH (2 x 50 mL) and water (4 x 50 mL) and dried in vacuum to give 28 g of crude product. Recrystallization from acetonitrile afforded the product as a yellow solid (19 g, 34 mmol).
TGA-DSC (screening): 0.5% mass loss = 215°C, Tdec. (onset) = 217°C.
ESI/APCI-MS: m z = 532 (M - C2H5).
IR [cm"1]: 2987 (w), 2243 (m), 2196 (m), 1851 (m), 1642 (s), 1479 (s), 1422 (s), 1368 (s),
1313 (s), 1200 (m), 1139 (m), 975 (s), 894 (m), 812 (m).
I9F NMR (471 MHz, CD3CN) δ = -136.53, -141.77.
JH NMR (500 MHz, CD3CN) 5 = 3.90 (q, 2H), 1.42 (t, 3H).
Betaine C4-B
A 250 mL Schlenk flask was charged with tetrachlorocyclopropene (4.15 g, 23.3 mmol) and 2-(2,3,5,6-tetrafluoro-4-(trifluoromethyl)phenyl)acetonitrile (C4-A, 12.0 g, 46.7 mmol) and dry DCM (80 mL) were added. The mixture was stirred and cooled to -30 °C and triethyl amine (15.4 g, 152 mmol) was added dropwise over 30 min. The mixture was allowed to warm to room temperature over 1 h. Water (12 mL) was added dropwise and the mixture was filtered. The solid was washed with water (2 x 140 mL) and dried in vacuum to give 6 g of crude product. The filtrate was concentrated to 30 mL upon which a precipitate formed. Filtration gave a second batch of crude product (6 g). Each batch was stirred with diethyl ether (25 mL) for 1 h at room temperature, filtered and the solids were dried in vacuum. The product was obtained as a colorless solid (5.49 g and 5.81 g, equals 11.3 g, 17.5 mmol).
ESI-MS: pos. 436, 648 (M +, 686; neg. 618 (M-Et-H)"
19F NMR (471 MHz, CD3CN) δ = -57.05, -142.79, -144.39.
!H NMR (500 MHz, CD3CN) δ = 3.89 (q, 2H), 1.43 (t, 3H).
IR [cm'1]: 2996 (w), 2185 (m), 1862 (w), 1652 (m), 1654 (s), 1461 (s), 1419 (s), 1397 (m), 1335 (s), 1316 (m), 1254 (s), 1170 (m), 1150 (m), 1124 (s), 1043 (m), 977 (s), 812 (m).
Analogous betaine intermediates C3-B, Al-B, A2-B, A3-B, A4-B, A5-B, A6-B, A7-B and A8-B which correspond in their substitution to symmetrical radialenes C3, Al, A2, A3, A4, A5, A6, A7 and A8 may be prepared analogously to C2-B and C4-B.
Comparative compound C5 Radialene precursor (reduced form) C5-P
A 500 mL Schlenk flask was charged with betaine C2-B (5.61 g, 10.0 mrnol), anhydrous potassium phosphate (4.46 g, 21.0 mmol) and 4-dimethylamino pyridine (1.22 g, 10.0 mmol) under argon. The flask was cooled on ice and dry DMF (185 mL) was added. The mixture was stirred on ice for 10 minutes and a solution of 2-(2J3,5.6-tetrafluoro-4-(trifluoromethyl) phenyl)acetonitrile C4-A (2.70 g, 10.5 mmol) in DMF (15 mL) was added over 10 minutes. After 4 h stirring on ice, the cooling bath was removed and the mixture allowed to warm to room temperature. After a total reaction time 27 h, the black-red mixture was added to brine (150 mL) and EtOAc (400 mL). The phases were separated and the organic layer was washed with half-concentrated brine (2 x 150 mL), 2 M aqueous HC1 (3 x 150 mL) (solution turns dark green) and saturated aqueous NaHC03 (3 x 100 mL) (solution turns black/red). The organic phase was dried over MgS04 and concentrated. Column chromatography (silica gel) with DCM/MeOH provided a dark red solution which was concentrated to give the product as a black solid (4.88 g).
This intermediate was not further purified, it was directly used in the last step. Radialene C5
Precursor C5-P (4.82g) was dissolved in glacial acetic acid (67 mL) and aqueous nitric acid (65 % w/w, 67 mL) was added dropwise at room temperature. The solution turned from black/green to red/orange. After stirring for 16 h, an orange precipitate formed and the mixture was cooled on ice. Water (70 mL) was added dropwise and the mixture was stirred for 15 min. Filtration gave an orange solid which was washed with cold water (10 x 40 mL) until the filtrate is neutral. Drying in air and in oil pump vacuum gave 3.25 g of a solid which was dissolved in hot 1-chlorobutane (100 °C, 400 mL). The solution was cooled to room temperature and filtered through a glass frit. The filtrate was concentrated to approx. 50 mL to give a suspension comprising an orange solid. After filtration and drying in air and in oil pump vacuum, the product was obtained as an orange powder (2.62 g) and further purified by sublimation in high vacuum.
ESI-MS: m/z = 715 (neg.)
UV-Vis (acetonitrile (ACN)): = 457 nm.
IR [cm"1]: 2249 (w), 1662 (w), 1563 (m), 1486 (s), 1415 (m), 1343 (m), 1328 (m), 1257 (m), 1194 (m), 1155 (m), 1069 (m), 978 (s), 909 (m), 813 (m), 717 (m). TGA-DSC (volatility): 0.5 % mass loss at 281°C, Tdec. (onset) = 325 °C.
I9F NMR (471 MHz, CH3C ): δ = -57.43, -77.04, -132.42, -134.43, -135.08, -139.98.
Comparative compound C6
Radialene precursor (reduced form) C6-P
A 250 mL Scblenk flask was charged with Cs2C03 (3.42 g, 10.5 mmol) and DMF (90 mL). The mixture was stirred on ice for 10 minutes and betaine C4-B (3.24 g, 5.0 mmol) was added. After 10 minutes, a solution of 2-(4-cyano-2,3,5,6-tetrafluorophenyl)acetonitrile C2-A (1.09 g, 5.1 mmol) in DMF (10 mL) was added. The mixture was stirred on ice and the cooling bath was removed after 19 h. After a total reaction time of 1 d 1 h, the black-red mixture was added to brine (80 mL) and EtOAc (200 mL). The phases were separated and the organic layer was washed with half-concentrated brine (2 x 80 mL), dried over MgS04 and concentrated to give the product as black-red oil containing some residual DMF (6.29 g).
This intermediate was not further purified, it was directly used in the last step.
Radialene C6
Precursor C6-P (6.29 g) was dissolved in 83 mL glacial acetic acid and 83 mL aqueous nitric acid (65 % w/w) were added dropwise at room temperature. The solution turned from black- green to red-orange. After stirring for 16 h, an orange precipitate has formed and the mixture was cooled on ice. 100 mL water were added dropwise and the mixture was stirred for 15 min. Filtration gave an orange solid which was washed with cold water (8 x 30 mL) until the filtrate was neutral. After drying in air and in oil pump vacuum, the product was obtained as an orange powder (3.07 g) which was further purified by sublimation in high vacuum.
ESI-MS: m/z = 758 (neg.)
UV-Vis (ACN): Xmsx = 454 nm.
IR [cm"1]: 2248 (w), 1662 (w), 1565 (m), 1483 (s), 1416 (m), 1339 (s), 1252 (m), 1198 (m), 1148 (s), 1060 (m), 984 (s), 907 (m), 812 (m), 785 (w), 715 (m).
TGA-DSC (volatility): 0.5 % mass loss at 252 °C, Tdee. (onset) = 320 °C.
19F NMR (471 MHz, CD3CN) δ - -57.46, -132.46, -134.50, -135.15, -140.04. Inventive compound B5
Step 1: potassium l-cyano-l-(2-cyano-3}5,6-trifluoropyridin-4-yl)-2-ethoxy-2-oxoethan-l-ide (ester intermediate A3-eE)
Figure imgf000020_0001
Chemical Formula: C6F4N2 Chemical Formula: CH H5F3KN3O2
Molecular Weight: 176,07 Molecular Weight: 307,27
In a 250 mL flask, to7.2 g (142 mmol) 2-cyano-3,4,5,6-tetrafluoropyridine, 60 mL acetonitrile and 6.78 g (170.4 mmol) potassium carbonate, 4.6 g (142 mmol) ethyl cyano acetate, dissolved in 10 mL ACN, were added. After 3 days stirring at room temperature, the formed precipitate was filtered and washed with 2 x 20 mL ACN. The organic solvent was evaporated. The remaining orange solid was dried in vacuum (10"3 mbar) and used in the next step without any further purification.
Yield: 10.4 g (83 %)
ESI-MS: M (neg) = 268.
HPLC-MS m/z = 268 (neg.).
Step 2: 4-(cyanomethyl)-3,5,6-trifluoropicolinonitrile
(nitrile intermediate A3-A)
Figure imgf000020_0002
Chemical Formula: C 1H5F3KN302 Chemical Formula: CBH2F3N3
Molecular Weight: 307,27 Molecular Weight: 197, 12
In a 250 mL round bottom flask, 10.39 g (33.8 mmol) ester intermediate A3-eE were dissolved in 86 mL aqueous acetic acid (50 % w/w). 1.3 mL sulphuric acid (cone.) were added and the mixture was heated under reflux for 2 hours. After cooling to room temperature, the mixture was poured into a 1L beaker with 200 mL ice water. After adding 200mL ethyl acetate, the mixture was stirred over a period of 30 min at room temperature. The organic layer was separated and the aqueous layer extracted with 2 x 200 mL ethyl acetate. The combined organic layers were washed with 200 mL water, 200 mL saturated aqueous sodium bicarbonate solution and 200 mL water. After drying over sodium sulphate, the solvent was removed in vacuum from the solution, to give yellow coloured oil. Distillation in vacuum gave a slight yellow oil (Tbath: 190 °C; bp: 110°C at 4*10"3 mbar).
Yield: 4.5 g (68 %).
TLC (Si02, DCM): Rf = 0.65
GC-MS: tR = 9.02 min., m/z = 197, 95%; tR = 8.86 min., m/z - 197, 5%.
1H-NMR (600 MHz, CD3C ): δ = 4.03 (s, 2H).
19F-NMR (282 MHz, CD3CN): δ = -81.11 (t, J= 25.4, IF), -114.21 (dd, J = 8.1, 26.5, IF), - 122.46 (dd, J= 8.0, 24.3, IF).
Step 3 : (Z)-4-(cyano(2-(cyano(2,3,5,6-tefrafluoro-4-(trifluoromemyl)-phenyl)methyl)-3- (cyano(2,3,5,6-tetrafluoro-4-(rrifluoromethyl)phenyl)-methylene)cycloprop- 1 -en- 1 - yl)methyl)-3,5,6-trifluoropicolinonitrile
(radialene precursor B5-P)
Figure imgf000021_0001
Chemical Formula:
Figure imgf000021_0002
Chemical Formula: C29H2F17N5
Molecular Weight: 647,42 Molecular Weight: 743,34
In a 250 mL Schlenk flask under argon, 3.3 g Cs2C03 were suspended in 90 mL DMF. The suspension was cooled to 0 °C and 3.1 g (4.8 mmol) betaine intermediate C4-B were added upon which an orange suspension formed. After addition 1.0 g 4-(cyanomethyl)-3,5,6- trifluoropicolinonitrile (A3-A, 5.0 mmol) in 10 mL dry DMF at 0 °C, the cooling bath was removed and stirring continued overnight. The brown suspension was stirred at room temperature for additional 24 hours, and the mixture was poured into 100 mL saturated NaCl solution. Extraction with 100 mL ethyl acetate, washing two times with 50 ml aqueous NaCl solution, drying with Na2S04 and removal of the solvent yielded a red oil which was dried in vacuum.
Crude yield: 6.89 g (191 %)
HPLC-MS: m/z
Figure imgf000022_0001
7.8 min., m/z = 741 (m z -H, C29FI7N5 "), tR = 13.9 min.
Step 4: (2Z,2Έ)-2,2,-((E) -(cyano(2-cymo-3,5,6-trifiuoropyridin-4-yl)methylene)cyclo- propane- 1 ,2 -diylidene)bis(2-(2,3 ,5 ,6-tetrafluoro -4 -(trifluoromethyl)-phenyl)acetonitrile) (radialene compound B5)
Figure imgf000022_0002
Chemical Formula: C2 H2Fi7 5 Chemical Formula: C29Ff7N5
Molecular Weight: 743,34 Molecular Weight: 741,33
3.3 g (1.0 mmol) radialene precursor B5-P were dissolved in 44 mL glacial acetic acid and treated dropwise at room temperature with 44 mL aqueous nitric acid (65 % w/w). The resulting red solution was stirred overnight and afterwards poured into 80 mL cold water. After lh stirring at room temperature, the resulting orange precipitate was filtered off, washed with water until pH was neutral and dried in vacuum.
Yield: 1.26 g (39 %)
The crude product was recrystallized from a mixture of cyclohexane and chlorohexane. Inventive compound B6 Step 1 : ethyl 2-cyano-2-(253,5-trifluoro-4,6-bis(trifluoromethyl)phenyl)acetate potassium salt (ester intermediate A2-eE)
Figure imgf000023_0001
Chemical Formula: CsFi0 Chemical Formula: C 3H5F9K 02
Molecular Weight: 286,07 Molecular Weight: 417,27
In a 250 mL flask, 10 g perfluor-m-xylene, 65 mL DMF and 5.8 g anhydrous potassium carbonate were mixed. After 5 min. stirring, 3.75 mL ethyl cyanoacetate were added dropwise to the continuously stirred yellow suspension. After 48 h at room temperature, the reaction was complete according to TLC-analysis. The precipitate formed during the reaction was removed by filtration and washed with acetonitrile. The filtrate was rotary evaporated to dryness and the resulting oil was dissolved in 40 mL toluene and again evaporated to dryness in order to remove residual DMF.
Crude yield: 18.8 g (129 %)
ESI-MS: m/z = 378 (m/z- K, Q3H5F9NO2"; neg.)
IR (ATR): 3443, 2161, 1662, 1599, 1469, 1352, 1262, 1215, 1125, 1062, 936, 879, 732 cm"1, Step 2: 2-(2?3,5-tiifluoro-4,6-bis(trifluoromethyl)phenyl)acetonitrile (nitrile intermediate A2-A)
Figure imgf000023_0002
Chemical Formula: C13H5F9KN02 Chemical Formula: C10H2F9N
Molecular Weight: 417,27 Molecular Weight: 307,12
In a 250 mL flask, 18.0 g crude ethyl 2-cyano-2-(2,3,5-trifluoro-4,6- bis(trifluoromethyI)phenyl)acetate potassium salt (A2-eE from the previous step) and 4.6 mL cone, sulphuric acid were dissolved in aqueous acetic acid (50 % v/v). The mixture was heat- ed under reflux for 48 hours. After cooling to room temperature, the mixture was poured into a 500 mL beaker with 100 mL ice water and stirred over a period of 5 min. The mixture was extracted with 3 x 50 mL ethyl acetate. The combined organic layers were washed with 2 x 50 mL saturated sodium bicarbonate aqueous solution and with 100 mL water. After drying the organic layer with sodium sulphate, the solvent was removed in vacuum to give a brown coloured oil. Distillation in vacuum gave a colourless liquid (bp: 75-80 °C (at (10'2 mbar; main fraction).
Yield: 8.45 g (64 %).
GC-MS: m/z = 307.
IR (ATR): 1650, 1608, 1495, 1469, 1354, 1243, 1142, 1081, 1033, 963, 894, 733, 655 cm"1.
Step 3 : 4-(cyano(2-(cyano(2,3,5-trifluoro-4,6-bis(1rifluoromethyl)phenyl)-methyl)-3- (cyano(4-cyano-2,3 , 5 ,6-tetrafluorophenyl)methyl)cycloprop-2-en- 1 -y lidene)-methyl)-2,3 , 5,6- tetrafluorobenzonitrile
(radialene precursor B6-P)
Figure imgf000024_0001
In a 100 mL Schlenk flask under argon, 2.12 g cesium carbonate were suspended in 45 mL dry dimethyl formamide and cooled to 0 °C. To the suspension, a solution of 1.0 g 2-(253,5- trifluoro-4,6-bis(trifluoromethyl)phenyl)acetonitrile in 5 mL dry dimethyl formamide was slowly added. The mixture was stirred for 5 min and 1.74 g of betaine intermediate C2-B were added as a solid. The stirring continued for 24 h and the reaction was allowed to reach ambient temperature. The reaction mixture was poured into a 250 mL separatory funnel containing 100 mL water and 80 mL ethyl acetate. The organic layer was separated, washed twice with 80 mL half-saturated NaCl aqueous solution, twice with 80 mL 2 aqueous HCl, and twice with 80 mL saturated aqueous sodium bicarbonate solution. The organic layer was finally dried with magnesium sulphate and the solvent was carefully removed by vacuum evaporation to give a dark purple solid.
Crude yield: 2.8 g (115 %).
ESI-MS: m/z = 766, 382 (neg.).
IR (ATR): 2233, 2165, 1639, 1475, 1370, 1339, 1257, 1214, 1134, 969, 815, 732 cm"1.
Step 4: (454'-((lZ,l'E)-((E)-3-(cyano(3,5,6-trifluoro-2,4-bis(trifluoromethyl)phenyl) meth- ylene)cyclopropane-l,2-diylidene)bis(cyanomethanylylidene))bis(2,3,5,6- tetrafluorobenzonitrile)
(radialene compound B6)
Figure imgf000025_0001
Chemical Formula: C3-1H2F-17N5 Chemical Formula: C3 F 7N5
Molecular Weight: 767,36 Molecular Weight: 765,35
In a 100 mL flask equipped with a dropping funnel, 1.44 g (1.88 mmol) radialene precursor B6-P were dissolved in 19 mL glacial acetic acid. Under vigorous stirring, 19 mL concentrated nitric acid (65 %, w/w) were added dropwise. During the nitric acid addition, the color of the solution changed from a greenish yellow to dark red. Stirring was continued overnight. The solution was then cooled to 0 °C and 40 mL water were added dropwise to induce precipitation of the bright orange product. The crude solid product was collected on sintered glass frit and washed with 3 x 15 mL water. The wet raw material was dried in a vacuum drying cabinet at 40 °C for 3 h and then at ambient temperature in high vacuum (10"2 mbar). The dried material was then recrystallized from 3:2 (v/v) mixture of l-chlorobutane and cyclohex- ane.
Yield: 333 mg (23 %)
Inventive compound B7 Step 1: potassium 2-(tert-butoxy)-l-cyano-2-oxo-l-(2,5,6-1xifluoro
(ester intermediate A7-tbE)
Figure imgf000026_0001
Chemical Formula: C4F4N2 Chemical Formula: C11 H9F3K 3O2
Molecular Weight: 152,05 Molecular Weight: 311 ,31
In a 250 mL flask, 10 g (65.8 mmol) perfluoropyrimidine and 18.2 g (132 mmol) anhydrous potassium carbonate were dissolved/suspended in 130 mL acetonitrile. A solution of 11.14 g (78.9 mmol) tert-butyl 2-cyanoacetate in 10 mL acetonitrile was added under stirring, a color- change of the reaction mixture to yellow was observed. The reaction mixture was stirred for 3 days at ambient temperature and filtered to remove solids. The solvent was removed from the filtrate and the obtained yellow solid was triturated with 120 mL DCM.
Yield: 20.1 g (98 %)
1H-NMR (CD3C , 300 MHz): 1.47 (s, 9 H).
19F-NMR (CD3CN, 282.3 MHz): -53.2 (d, 1 F), -93.4 (d, 1 F), -163.7 (br s, 1 F).
IR (ATR, cm-1): 2185, 1738, 1646, 1606, 1539, 1461, 1442, 1377, 1281, 1198, 1155, 1115,
1027, 899, 840, 775.
Step 2: 2-(2,5,6-trifiuoropyrimidin-4-yl)acetonitrile
(nitrile intermediate A7-A)
Figure imgf000026_0002
Chemical Formula: C H9F3 N302 Chemical Formula: C4F3N2
Molecular Weight: 311 ,31 Molecular Weight: 133,05
A pressure tube with a screw cap was charged with 5.5 g (17.7 mmol) A7-tbE and 60 mL dioxane. To this mixture, 17.7 mL 4 M anhydrous HCl in dioxane were added and the tube was sealed. The reaction mixture was heated for 4 h to 100 °C and subsequently poured into 100 mL water. This mixture was extracted with 3 x 50 mL EtOAc and the collected organic layers washed with 50 mL water and 50 mL brine. After drying with Na2SC«4, the solvent was removed and the crude product was purified by bulb-to-bulb distillation (140 °C @ 3x10"3 mbar).
Yield: 2.02 g (66 %)
19F-N R (CDCl3j 282.3 MHz): -45.2 (d, IF), -72.3 (d, 1 F), -156.2 (m, 1 F).
GC-MS: m/z = 173 (IVT, 100), 153(20), 108(20)
IR (ATR, cm"1): 2269, 1609, 1462, 1402, 1243, 1105, 1050, 1017, 928, 769, 725.
Step 3 : (Z)-2-(2-(cyano(2,3,5,6-tetrafluoro-4-(trifluoromethyl)phenyl)-methyl)-3- (cyano(2,3 ,5 ,6-tetrafluoro-4-(trifluoromethyl)phenyl)methylene)cycloprop- 1 -en- 1 -yl)-2- (2,5,6-trifluoropyrimidin-4-yl)acetonitrile
(radiaiene precursor B7-P)
Figure imgf000027_0001
Chemical Formula: C^H^F^^
Chemical Formula: C27H FI7N5 Molecular Weight: 647,42 Molecular Weight: 719,32
In a 250 mL Schlenk flask under argon, 3.6 g Cs2C03 were suspended in 90 mL DMF. The suspension was cooled to 0 °C and betaine intermediate C4-B (3.6 g, 5.6 mmol) was added upon which an orange suspension formed. After an addition of 1.0 g 2-(2,5,6- Mfluoropyrimidin-4-yl)acetonitrile (A7-A, 5.7 mmol) in 10 mL dry DMF to the stirred mixture at 0 °C, the cooling bath was removed and stirring was continued overnight. The brown suspension was stirred at room temperature for additional 24 hours, and the reaction mixture was then poured into 100 mL saturated aqueous NaCl solution. Extraction with 100 mL ethyl acetate, washing two times with 50 mL NaCl-solution, drying with Na2S04 and removal of the solvent afforded a red oil which was dried in vacuum. Crude yield: 6.06 g (151 %).
HPLC-MS: m/z = 358 ((m/z)/2), 718 (M-H).
Step 4: (2Z,2^-2,2'-((E)-3-(cyano(2,5,6-trifluoropyrimidin^
l,2-chyIidene)bis(2-(2,3,5,6-tetrafluoro-4-^
(radialene compound B7)
Figure imgf000028_0001
Chemical Formula: C27H2F17N5 Chemical Formula: C27F17 5
Molecular Weight: 719,32 Molecular Weight: 717,30
3.0 g (4.2 mmol) A7-P were dissolved in 42 mL glacial acetic acid and treated dropwise at room temperature with 42 mL aqueous nitric acid (65 % w/w). The resulting red solution was stirred overnight and afterwards poured into 80 mL cold water. After lh stirring at room temperature, the resulting orange precipitate was filtered off, washed with water until pH was neutral and dried in vacuum.
Crude yield: 0.9 g (30 %)
The crude product was recrystallized from a mixture of cyclohexane and chlorohexane.
Device example
In an experimental OLED built on a glass substrate provided with an ITO anode, 10 nm thick hole injection transport layer (HIL) consisting of commercially available biphenyl-4-yl(9,9- diphenyl-9H-fluoren-2-yl) - [4-9-phenyl-9H-carbazol-3 -yl)phenyl] -amine (CAS number 1242056-42-3) doped with 8 weight % of the tested compound, 130 nm thick hole transport layer made of the same matrix compound as the HIL, 20 nm thick emitting layer made of commercially available host compound ABH113 with 3 wt % emitter NUBD370 (both from the same supplier Sun Fine Chemicals, Korea), 36 nm thick electron transport layer made of (3-(dibenzo[c,h]acridin-7-yl)phenyl)diphenylphosphine oxide and lithium 8-hydroxyquino- linolate (LiQ, 1:1 w/w), and 30 nm thick silver cathode, similar performance in terms of voltage, efficiency, lifetime and color coordinates was observed for comparative and inventive compounds.
The features of the invention which are disclosed in the previous description and in the claims individually, can be used as well as in any combination for the realization of the invention in its various embodiments.
Abbreviations and symbols used throughout the application
ACN acetonitrile
bp boiling point
br broad
CAS Chemical Abstract Service
cone. concentrated
CV cyclic voltammetry
DCM dichloromethane
DMF N,N-dimethylformamide
DSC differential scanning calorimetry
E° electrochemical redox potential
EIL electron injecting layer
ESI electrospray ionization
ETL electron transporting layer
ETM electron transport matrix
EtOAc ethyl acetate
Fc+/Fc ferricenium/ferrocene reference system
GC gas chromatography
HIL hole injecting layer
HOMO highest occupied molecular orbital
HTL hole transporting layer
HTM hole transport matrix
IR infrared (light, spectroscopy)
ITO indium tin oxide
LiQ lithium 8-hydroxyquinolinolate
LUMO lowest unoccupied molecular orbital mol% molar percent
MeOH methanol
mp melting point
MS mass spectrometry
m/z mass/charge ratio
neg. negative
OLED organic light emitting diode
Rf retention factor
TGA thermogravimetric analysis
THF tetrahydrofuran
TLC thin layer chromatography
tr retention time
UV-vis ultraviolet-visible (light, spectroscopy) vol% volume percent
v/v volume-to-volume (volume percent)
VTE vacuum thermal evaporation wt% weight (mass) percent
w/w weight-to-weight (mass percent)

Claims

1. Process for preparation of an electrically doped semiconducting material comprising a [3]- radialene p-dopant or for preparation of an electronic device containing a layer comprising a [3]-radialene p-dopant, the process comprising the steps
(i) loading an evaporation source with the [3]-radialene p-dopant and
(ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure, wherein the [3]-radialene p-dopant is selected from compounds having a structure according to formula (I)
Figure imgf000031_0001
1
wherein A and A are independently aryl- or heteroaryl-substituted cyanomethylidene groups,
the aryl and/or heteroaryl is selected independently in A 1 and A ΐ from 4-cyano-2,3,5,6- tetrafluorphenyl, 2,3)5,6-tetrafiuorpyridine-4-yl, 4-trifluormethyl-2.3,5,6-tetrafluorphenyl, 2,4-bis(trifluormethyl)-3 , 5,6-trifluorphenyl, 2 , 5 -bis(trifluormethyl)-3 ,4, 6-trifluorphenyl, 2,4,6- s(1rifluormethyl)- 1 ,3-diazine-5-yl, 3 ,4-dicyano-2,556-trifluorphenyl, 2-cyano-3,5,6- trifluorpyridine-4-yl, 2-trifluormethyl-355,6-trifluorpyridine-4-yl, 2,5,6-trifluor-l ,3- diazine-4-yl and 3-trifluormethyl-4-cyano-2,5, 6-trifluorphenyl, and at least one aryl or heteroaryl is 2,3,5,6-tetrafluorpyridine-4-yl, 2,4-bis(trifluormethyl)- 3, 5, 6-trifluorphenyl, 2}5-bis(trifluormethyl)-3,4,6-trifluorphenyl, 2,4,6-tris( fluormethyl)- l,3-diazine-5-yl, 3,4-dicyano-2,5,6-trifluorphenyl, 2-cyano-3,556-trifluorpyridine-4-yl, 2- trifluormethyl-3,5,6-trifluorpyridme-4-yl, 2,5}6-trifluor-l,3-diazine-4-yl or 3- trifίuormethyl-4-cyano-2,5,6-trifluo henyl, provided that the heteroaryl in both A1 and A2 cannot be 2,3,5, 6-tetrafluorpyridine-4-yl at the same time.
2. The process according to claim 1, wherein the temperature in step (ii) is in the range 100-
300 °C.
3. The process according to claim 2 1 or 2, wherein duration of the step (ii) is at least 100 hours.
4. The process according to any of claims 1-3, wherein in the step (ii), a hole transport material comprising at least one hole transport matrix compound is co-evaporated with the compound having structure (I) and, in a subsequent step (iii), the compound (I) and the hole transport matrix compound are co-deposited to form a semiconducting material.
5. The process according to any of claims 1-4, wherein the step (ii) is carried out at a pressure which is lower than 10"1 Pa.
6. The process according to any of claims 1-5, wherein compound (I) has reversible redox potential, measured by cyclic voltammetry in acetonitrile against ferrocene/ferricenium reference system, in the range from + 0.10 to + 0.50 V,
7. [3]-radialene compound having a structure according to formula (I)
Figure imgf000032_0001
wherein
A1 and A2 are independently aryl- or heteroaryl-substituted cyanomethylidene groups, the aryl and/or heteroaryl is selected independently in A1 and A2 from 4-cyano-2,3,5,6- tetrafluorphenyl, 2,3,5 ,6-tetrafluorpyridine-4-yl, 4-trifluormethyl-2,3 ,5 , 6-tetrafTuorphenyl, 2,4-bis(trifluormethyl)-3,5,6-trifluorphenyl, 2,5-bis(trifluormethyl)-3,4,6-trifluorphenyl, 2,4,6-tris(trifluormethyl)-l ,3-diazine-5-yl, 3,4-dicyano-2,5,6-trifluorphenyl, 2-cyano-3,5,6- trifluorpyridine-4-yl, 2-trifluormethyl-3 , 5 ,6-trifluorpyridine-4-yl , 2, 5 ,6-trifluor- 1,3- diazine-4-yl and 3-trifluonnethyl-4-cyano-255,6-trifluorphenylJ and at least one aryl or heteroaryl is 2,3,5,6-tetrafluorpyridine-4-yl, 2,4-bis(trifluormethyl)- 3 , 5 ,6-trifluorphenyl, 2, 5 -bis(trifluormethyl)-3 ,4,6-trifluorphenyl, 2,4,6-tris(trifluormethyl)- l,3-diazine-5-yl, 3,4-ch^yano-2.5,6-trifiuorphenyl, 2-cyano-3,5,6-trifluorpyridine-4-yl, 2- trifluorrnethyl-3,5,6-trifluorpyridine-4-yl, 2,5,6-trifluor-l,3-diazine-4-yI or 3- trifluormethyl-4-cyano-2,556-trifluorphenyl, provided that the heteroaryl in both A1 and A2 cannot be 2,3,5,6-tetrafIuorpyridine-4-yl at the same time.
8. The compound according to claim 7, having reversible redox potential, measured by cyclic voltammetry in acetonitrile against ferrocene/ferricenium reference system, in the range from + 0.10 to + 0.50 V.
9. Semiconducting material comprising the compound according to claim 7 or 8 and a matrix material comprising at least one hole transport matrix compound.
10. Semiconducting layer consisting of the compound according to claim 7 or 8 or consisting of the semiconducting material according to claim 9.
11. Use of the compound according to claim 7 or 8 as a p-dopant in a semiconducting material, in a semiconducting layer, and / or in an electronic device.
12. Electronic device comprising, between a first and a second electrode, the semiconducting material according to claim 9 and / or the semiconducting layer according to claim 10.
13. Electronic device according to claim 11 which is an organic light emitting diode.
14. Electronic device according to claim 12 or 13, wherein the compound having formula (I) is comprised in a hole injecting layer and / or in a hole transporting layer and / or in a charge generating layer.
15. Process for synthesis of the [3]-radialene compound according to claim 7 or 8, wherein the last synthesis step, in which the compound of formula (I) is formed, is carried out in a solvent comprising at least one saturated halogenated carboxylic acid.
PCT/EP2015/080046 2014-12-16 2015-12-16 Substituted 1,2,3-triylidenetris(cyanomethanylylidene)) cyclopropanes for vte, electronic devices and semiconducting materials using them WO2016097017A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP15813358.7A EP3233787B1 (en) 2014-12-16 2015-12-16 Substituted 1,2,3-triylidenetris(cyanomethanylylidene)) cyclopropanes for vte, electronic devices and semiconducting materials using them
CN202310716552.1A CN116789565A (en) 2014-12-16 2015-12-16 Substituted 1,2, 3-trisCyano (cyanomethyl) cyclopropanes for VTE, electronic devices and semiconductor materials using the same
JP2017532070A JP6649952B2 (en) 2014-12-16 2015-12-16 Substituted 1,2,3-triylidenetris (cyanomethanylylidene)) cyclopropanes for VTE, electronics and semiconductor materials using them
CN201580069040.4A CN107207420A (en) 2014-12-16 2015-12-16 1,2,3 3 substituted subunit three (cyano methyl subunit) cyclopropane, electronic device and semi-conducting material using it for VTE
KR1020177019758A KR102601563B1 (en) 2014-12-16 2015-12-16 Substituted 1,2,3-triylidenetris(cyanomethanylylidene)) cyclopropanes for vte, electronic devices and semiconducting materials using them
CN202310717101.XA CN116789566A (en) 2014-12-16 2015-12-16 Substituted 1,2, 3-trisCyano (cyanomethyl) cyclopropanes for VTE, electronic devices and semiconductor materials using the same
US15/536,778 US10128442B2 (en) 2014-12-16 2015-12-16 Substituted 1,2,3-triylidenetris(cyanomethanylylidene) cyclopropanes for VTE, electronic devices and semiconducting materials using them

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14198165.4 2014-12-16
EP14198165.4A EP3034489A1 (en) 2014-12-16 2014-12-16 Substituted 1,2,3-triylidenetris(cyanomethanylylidene)) cyclopropanes for VTE, electronic devices and semiconducting materials using them

Publications (1)

Publication Number Publication Date
WO2016097017A1 true WO2016097017A1 (en) 2016-06-23

Family

ID=52338831

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2015/080046 WO2016097017A1 (en) 2014-12-16 2015-12-16 Substituted 1,2,3-triylidenetris(cyanomethanylylidene)) cyclopropanes for vte, electronic devices and semiconducting materials using them

Country Status (7)

Country Link
US (1) US10128442B2 (en)
EP (2) EP3034489A1 (en)
JP (1) JP6649952B2 (en)
KR (1) KR102601563B1 (en)
CN (3) CN107207420A (en)
TW (1) TWI695899B (en)
WO (1) WO2016097017A1 (en)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106867505A (en) * 2016-12-22 2017-06-20 成都新柯力化工科技有限公司 A kind of high life OLED luminescent materials and preparation method thereof
CN110938085A (en) * 2019-12-04 2020-03-31 宁波卢米蓝新材料有限公司 Axis compound and preparation method and application thereof
DE102020108402A1 (en) 2020-03-26 2021-09-30 Novaled Gmbh Organic electronic device, organic semiconducting material, a trioxatriborinane compound and their use
WO2021250279A1 (en) 2020-06-12 2021-12-16 Novaled Gmbh Organic light emitting diode and device comprising the same
EP3930023A1 (en) 2020-06-22 2021-12-29 Novaled GmbH Organic electronic device comprising a compound of formula (1), display device comprising the organic electronic device as well as compounds of formula (1) for use in organic electronic devices
WO2021259789A1 (en) 2020-06-22 2021-12-30 Novaled Gmbh Organic electronic device comprising a compound of formula (1), display device comprising the organic electronic device as well as compounds of formula (1) for use in organic electronic devices
EP3989302A1 (en) 2020-10-22 2022-04-27 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
EP3989305A1 (en) 2020-10-22 2022-04-27 Novaled GmbH Organic electronic device comprising a compound of formula (1), display device comprising the organic electronic device as well as compounds of formula (1) for use in organic electronic devices
EP3989301A1 (en) 2020-10-22 2022-04-27 Novaled GmbH Organic electronic device comprising a compound of formula (1), display device comprising the organic electronic device as well as compounds of formula (1) for use in organic electronic devices
EP3989303A1 (en) 2020-10-22 2022-04-27 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
EP3989304A1 (en) 2020-10-22 2022-04-27 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
EP4036080A1 (en) 2021-02-01 2022-08-03 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
EP4113639A1 (en) 2021-06-29 2023-01-04 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
EP4155303A1 (en) 2021-09-22 2023-03-29 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, a composition comprising a compound of formula (iv) and at least one compound of formula (iva) to (ivd), an organic semiconductor layer comprising the compound or composition, an organic electronic device comprising the organic semiconductor layer, and a display device comprising the organic electronic device
EP4199132A1 (en) 2021-12-20 2023-06-21 Novaled GmbH Charge generation layer comprising a compound of formula (i), organic electronic device and display device comprising the charge generation layer as well as compounds of formula (i)
EP4287283A1 (en) 2022-06-03 2023-12-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4287812A1 (en) 2022-06-03 2023-12-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4287282A1 (en) 2022-06-03 2023-12-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
WO2023232967A1 (en) 2022-06-03 2023-12-07 Novaled Gmbh Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
WO2023232972A1 (en) 2022-06-03 2023-12-07 Novaled Gmbh Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4333590A1 (en) 2022-08-30 2024-03-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4344390A1 (en) 2022-09-21 2024-03-27 Novaled GmbH Organic electroluminescent device comprising a radialene of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4387415A1 (en) 2022-12-13 2024-06-19 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102494453B1 (en) * 2015-10-05 2023-02-02 삼성디스플레이 주식회사 Organic electroluminescent device and display device including the same
CN108735911B (en) * 2018-06-04 2020-04-14 长春海谱润斯科技有限公司 Organic light-emitting device
CN109081791A (en) * 2018-08-03 2018-12-25 瑞声科技(南京)有限公司 A kind of organic semiconducting materials and luminescent device
US11997862B2 (en) * 2018-12-27 2024-05-28 Lg Display Co., Ltd. Display device
CN112624990A (en) * 2019-10-08 2021-04-09 广州华睿光电材料有限公司 Nitrogen-containing heterocycle substituted cyclopropane compound and application thereof
CN111647140B (en) * 2020-05-25 2022-05-03 湘潭大学 Polymeric carbazole derivative cadmium complex and preparation method and application thereof
EP3930022A1 (en) * 2020-06-22 2021-12-29 Novaled GmbH Organic electronic device and display device comprising the organic electronic device as well as a composition for use in organic electronic devices
EP3930024B1 (en) * 2020-06-22 2023-04-05 Novaled GmbH Organic electronic device and display device comprising the organic electronic device as well as a composition for use in organic electronic devices
KR20220065975A (en) * 2020-11-13 2022-05-23 삼성디스플레이 주식회사 Display apparatus
EP4106027A1 (en) * 2021-06-18 2022-12-21 Novaled GmbH Active-matrix oled display
CN116854600A (en) * 2023-04-03 2023-10-10 上海辉纳思光电科技有限公司 p-type organic semiconductor dopant, preparation and perovskite semiconductor device

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3963769A (en) 1974-12-20 1976-06-15 E. I. Du Pont De Nemours And Company Substituted trimethylene cyclopropanes, salts thereof, intermediates and methods of making the same
WO2010075836A2 (en) 2008-12-15 2010-07-08 Novaled Ag Heterocyclic compounds and the use thereof in electronic and optoelectronic components
WO2010132236A1 (en) 2009-05-13 2010-11-18 Global Oled Technology Llc. Internal connector for organic electronic devices
WO2011134458A1 (en) 2010-04-27 2011-11-03 Novaled Ag Organic semiconducting material and electronic component
US8057712B2 (en) 2008-04-29 2011-11-15 Novaled Ag Radialene compounds and their use
US20120223296A1 (en) 2011-03-01 2012-09-06 Sensient Imaging Technologies Gmbh Organic Semiconducting Materials and Organic Component
WO2013135237A1 (en) 2012-03-15 2013-09-19 Novaled Ag Aromatic amine-terphenyl compounds and use thereof in organic semiconducting components
EP2684932A1 (en) * 2012-07-09 2014-01-15 Novaled AG Diarylamino matrix material doped with a mesomeric radialene compound
WO2014037512A2 (en) 2012-09-07 2014-03-13 Novaled Ag Charge transporting semi-conducting material and semi-conducting device
WO2014060526A1 (en) 2012-10-17 2014-04-24 Novaled Gmbh Phosphorescent oled and hole transporting materials for phosphorescent oleds
WO2015007729A1 (en) 2013-07-15 2015-01-22 Novaled Gmbh Process for 1,2,3-triylidenetris(cyanomethanylylidene))tris(2,3,5,6-tetrafluorobenzonitrile)-cyclopropane

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011065051A1 (en) 2009-11-25 2013-04-11 シャープ株式会社 Power supply circuit and liquid crystal display device including the same

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3963769A (en) 1974-12-20 1976-06-15 E. I. Du Pont De Nemours And Company Substituted trimethylene cyclopropanes, salts thereof, intermediates and methods of making the same
US8057712B2 (en) 2008-04-29 2011-11-15 Novaled Ag Radialene compounds and their use
WO2010075836A2 (en) 2008-12-15 2010-07-08 Novaled Ag Heterocyclic compounds and the use thereof in electronic and optoelectronic components
WO2010132236A1 (en) 2009-05-13 2010-11-18 Global Oled Technology Llc. Internal connector for organic electronic devices
US20100288362A1 (en) * 2009-05-13 2010-11-18 Hatwar Tukaram K Internal connector for organic electronic devices
WO2011134458A1 (en) 2010-04-27 2011-11-03 Novaled Ag Organic semiconducting material and electronic component
US20120223296A1 (en) 2011-03-01 2012-09-06 Sensient Imaging Technologies Gmbh Organic Semiconducting Materials and Organic Component
WO2013135237A1 (en) 2012-03-15 2013-09-19 Novaled Ag Aromatic amine-terphenyl compounds and use thereof in organic semiconducting components
EP2684932A1 (en) * 2012-07-09 2014-01-15 Novaled AG Diarylamino matrix material doped with a mesomeric radialene compound
WO2014009310A1 (en) 2012-07-09 2014-01-16 Novaled Ag Doped organic semiconductive matrix material
WO2014037512A2 (en) 2012-09-07 2014-03-13 Novaled Ag Charge transporting semi-conducting material and semi-conducting device
WO2014060526A1 (en) 2012-10-17 2014-04-24 Novaled Gmbh Phosphorescent oled and hole transporting materials for phosphorescent oleds
WO2015007729A1 (en) 2013-07-15 2015-01-22 Novaled Gmbh Process for 1,2,3-triylidenetris(cyanomethanylylidene))tris(2,3,5,6-tetrafluorobenzonitrile)-cyclopropane

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.AM.CHEM.SOC., vol. 98, 1976, pages 610 - 611

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106867505A (en) * 2016-12-22 2017-06-20 成都新柯力化工科技有限公司 A kind of high life OLED luminescent materials and preparation method thereof
CN106867505B (en) * 2016-12-22 2019-06-14 成都新柯力化工科技有限公司 A kind of high life OLED luminescent material and preparation method thereof
CN110938085A (en) * 2019-12-04 2020-03-31 宁波卢米蓝新材料有限公司 Axis compound and preparation method and application thereof
DE102020108402A1 (en) 2020-03-26 2021-09-30 Novaled Gmbh Organic electronic device, organic semiconducting material, a trioxatriborinane compound and their use
DE102020108402B4 (en) 2020-03-26 2021-11-11 Novaled Gmbh Organic electronic device, organic semiconducting material, a trioxatriborinane compound and their use
WO2021250279A1 (en) 2020-06-12 2021-12-16 Novaled Gmbh Organic light emitting diode and device comprising the same
EP3930023A1 (en) 2020-06-22 2021-12-29 Novaled GmbH Organic electronic device comprising a compound of formula (1), display device comprising the organic electronic device as well as compounds of formula (1) for use in organic electronic devices
WO2021259789A1 (en) 2020-06-22 2021-12-30 Novaled Gmbh Organic electronic device comprising a compound of formula (1), display device comprising the organic electronic device as well as compounds of formula (1) for use in organic electronic devices
WO2021259786A1 (en) 2020-06-22 2021-12-30 Novaled Gmbh Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
WO2021259784A2 (en) 2020-06-22 2021-12-30 Novaled Gmbh Organic electronic device comprising a compound of formula (i), display device comprising the organic electronic device as well as compounds of formula (i) for use in organic electronic devices
WO2021259787A1 (en) 2020-06-22 2021-12-30 Novaled Gmbh Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
WO2021259790A1 (en) 2020-06-22 2021-12-30 Novaled Gmbh Organic compound of formula (i) for use in organic electronic devices, a composition comprising a compound of formula (iv) and at least one compound of formula (iva) to (ivd), an organic semiconductor layer comprising the compound or composition, an organic electronic device comprising the organic semiconductor layer, and a display device comprising the organic electronic device
WO2021259792A1 (en) 2020-06-22 2021-12-30 Novaled Gmbh ORGANIC COMPOUND OF FORMULA (I) FOR USE IN ORGANIC ELECTRONIC DEVICES, A COMPOSITION COMPRISING A COMPOUND OF FORMULA (IV) AND AT LEAST ONE COMPOUND OF FORMULA (IVa) TO (IVd), AN ORGANIC SEMICONDUCTOR LAYER COMPRISING THE COMPOUND OR COMPOSITION, AN ORGANIC ELECTRONIC DEVICE COMPRISING THE ORGANIC SEMICONDUCTOR LAYER, AND A DISPLAY DEVICE COMPRISING THE ORGANIC ELECTRONIC DEVICE
WO2021259791A1 (en) 2020-06-22 2021-12-30 Novaled Gmbh Organic electronic device comprising a compound of formula (i), display device comprising the organic electronic device as well as compounds of formula (i) for use in organic electronic devices
WO2021259782A2 (en) 2020-06-22 2021-12-30 Novaled Gmbh Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
WO2021259785A1 (en) 2020-06-22 2021-12-30 Novaled Gmbh Organic electronic device comprising a compound of formula (i), display device comprising the organic electronic device as well as compounds of formula (i) for use in organic electronic devices
EP3989302A1 (en) 2020-10-22 2022-04-27 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
EP3989305A1 (en) 2020-10-22 2022-04-27 Novaled GmbH Organic electronic device comprising a compound of formula (1), display device comprising the organic electronic device as well as compounds of formula (1) for use in organic electronic devices
EP3989301A1 (en) 2020-10-22 2022-04-27 Novaled GmbH Organic electronic device comprising a compound of formula (1), display device comprising the organic electronic device as well as compounds of formula (1) for use in organic electronic devices
EP3989303A1 (en) 2020-10-22 2022-04-27 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
EP3989304A1 (en) 2020-10-22 2022-04-27 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
EP4036080A1 (en) 2021-02-01 2022-08-03 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
WO2022161706A1 (en) 2021-02-01 2022-08-04 Novaled Gmbh Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
EP4113639A1 (en) 2021-06-29 2023-01-04 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
WO2023275021A1 (en) 2021-06-29 2023-01-05 Novaled Gmbh Organic compound of formula (i) for use in organic electronic devices, an organic electronic device comprising a compound of formula (i) and a display device comprising the organic electronic device
EP4155303A1 (en) 2021-09-22 2023-03-29 Novaled GmbH Organic compound of formula (i) for use in organic electronic devices, a composition comprising a compound of formula (iv) and at least one compound of formula (iva) to (ivd), an organic semiconductor layer comprising the compound or composition, an organic electronic device comprising the organic semiconductor layer, and a display device comprising the organic electronic device
WO2023046743A1 (en) 2021-09-22 2023-03-30 Novaled Gmbh Organic compound of formula (i) for use in organic electronic devices, a composition comprising a compound of formula (iv) and at least one compound of formula (iva) to (ivd), an organic semiconductor layer comprising the compound or composition, an organic electronic device comprising the organic semiconductor layer, and a display device comprising the organic electronic device
EP4199132A1 (en) 2021-12-20 2023-06-21 Novaled GmbH Charge generation layer comprising a compound of formula (i), organic electronic device and display device comprising the charge generation layer as well as compounds of formula (i)
EP4287283A1 (en) 2022-06-03 2023-12-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4287812A1 (en) 2022-06-03 2023-12-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4287811A1 (en) 2022-06-03 2023-12-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4287282A1 (en) 2022-06-03 2023-12-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
WO2023232967A1 (en) 2022-06-03 2023-12-07 Novaled Gmbh Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
WO2023232957A1 (en) 2022-06-03 2023-12-07 Novaled Gmbh Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
WO2023232959A1 (en) 2022-06-03 2023-12-07 Novaled Gmbh Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
WO2023232972A1 (en) 2022-06-03 2023-12-07 Novaled Gmbh Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4333590A1 (en) 2022-08-30 2024-03-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
WO2024046607A1 (en) 2022-08-30 2024-03-07 Novaled Gmbh Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4344390A1 (en) 2022-09-21 2024-03-27 Novaled GmbH Organic electroluminescent device comprising a radialene of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
WO2024061523A1 (en) 2022-09-21 2024-03-28 Novaled Gmbh Organic electroluminescent device comprising a radialene of formula (i) and an arylamine compound, diarylamine compound, triarylamine compound or a compound of formula (iia) or (iib), and display device comprising the organic electroluminescent device
EP4387415A1 (en) 2022-12-13 2024-06-19 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device

Also Published As

Publication number Publication date
CN116789566A (en) 2023-09-22
EP3233787A1 (en) 2017-10-25
EP3034489A1 (en) 2016-06-22
JP2018506137A (en) 2018-03-01
TWI695899B (en) 2020-06-11
JP6649952B2 (en) 2020-02-19
EP3233787B1 (en) 2018-09-26
TW201638366A (en) 2016-11-01
CN116789565A (en) 2023-09-22
US10128442B2 (en) 2018-11-13
US20170373251A1 (en) 2017-12-28
KR20170097707A (en) 2017-08-28
KR102601563B1 (en) 2023-11-10
CN107207420A (en) 2017-09-26

Similar Documents

Publication Publication Date Title
EP3233787B1 (en) Substituted 1,2,3-triylidenetris(cyanomethanylylidene)) cyclopropanes for vte, electronic devices and semiconducting materials using them
JP5281270B2 (en) Iridium complex compound, organic electroluminescence device using the same, and use thereof
CN109980111B (en) Organic electroluminescent device containing tetradentate platinum (II) complex
KR20240014475A (en) Narrow band red phosphorescent tetradentate platinum (ii) complexes
US20110301351A1 (en) Platinum (II) Di (2-Pyrazolyl) Benzene Chloride Analogs and Uses
CN109970714B (en) Tetradentate platinum (II) complex and application thereof
WO2006109895A1 (en) Thiophene compound having phosphoric ester and process for producing the same
CN104030988A (en) Benzimidazole-based electron transport compound
Li et al. The effect of different binding sites on the optical and electronic properties of tetraphenylethylene-substituted thiophene isomers
CN109970811A (en) A kind of four tooth platinum (II) complex materials and application based on oxazole, thiazole or imidazoles
CN110903295A (en) Organic compound with benzofuran derivative as core and application thereof
CN104073248B (en) A kind of hole transport compound based on fluorenes
Wannebroucq et al. Synthesis and characterization of fluorophthalocyanines bearing four 2-(2-thienyl) ethoxy moieties: from the optimization of the fluorine substitution to chemosensing
CN103865525A (en) Organic electroluminescence compound
US20240059962A1 (en) Central chirality induced spiro chiral tetradentate cyclometalated platinum (ii) and palladium (ii) complex-based circularly polarized luminescence material and application thereof
CN113698432B (en) Preparation and application of tetradentate platinum (II) complex
JP5147103B2 (en) Method for synthesizing benzometall and novel diyne compound
JP2018100264A (en) Compound and organic electronic device using the same
KR101751784B1 (en) Novel phenylanthracene derivatives and organic electroluminescent device using the same
CN111961019B (en) Organic photoelectric material containing butterfly structure and preparation method and application thereof
WO2011087130A1 (en) Acetylene compound and organic semiconductor material comprising same
JP4392721B2 (en) Organic electroluminescence device using phosphorescence
KR101699155B1 (en) New terthiophen compound and use thereof
CN107001261A (en) Organic compound and the electronic installation for including the organic layer containing the organic compound
Xiaodan et al. Synthesis and photophysical properties of multi-branched ethynyl fluorene-labeled molecules

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15813358

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2017532070

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 15536778

Country of ref document: US

REEP Request for entry into the european phase

Ref document number: 2015813358

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20177019758

Country of ref document: KR

Kind code of ref document: A