WO2016089254A3 - Method of ionizing radiation sensor manufacturing - Google Patents

Method of ionizing radiation sensor manufacturing Download PDF

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Publication number
WO2016089254A3
WO2016089254A3 PCT/RU2016/000043 RU2016000043W WO2016089254A3 WO 2016089254 A3 WO2016089254 A3 WO 2016089254A3 RU 2016000043 W RU2016000043 W RU 2016000043W WO 2016089254 A3 WO2016089254 A3 WO 2016089254A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
ions
type conductivity
working side
ionizing radiation
Prior art date
Application number
PCT/RU2016/000043
Other languages
French (fr)
Other versions
WO2016089254A2 (en
Inventor
Vladimir Aleksandrovich ELIN
Mikhail Moiseevich MERKIN
Sergei Aleksandrovich GOLUBKOV
Lubov Grigorievna LITOSH
Vera Anatolievna RUSINA
Original Assignee
Elin Vladimir Aleksandrovich
Merkin Mikhail Moiseevich
Golubkov Sergei Aleksandrovich
Litosh Lubov Grigorievna
Rusina Vera Anatolievna
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elin Vladimir Aleksandrovich, Merkin Mikhail Moiseevich, Golubkov Sergei Aleksandrovich, Litosh Lubov Grigorievna, Rusina Vera Anatolievna filed Critical Elin Vladimir Aleksandrovich
Publication of WO2016089254A2 publication Critical patent/WO2016089254A2/en
Publication of WO2016089254A3 publication Critical patent/WO2016089254A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Weting (AREA)

Abstract

The method of production of the ionizing radiation sensor, whereby the sensor is formed on a polished wafer cut from an ingot of ultra-pure silicon of n-type conductivity, for what the following operations are consistently carried out: the first chemical wafer clean-up in the solution of surface-active agents containing complexons, formation of silicon oxide layer by thermal oxidation in the atmosphere of dry oxygen with the addition of chlorine- containing components, the implantation of the ions of p-type conductivity impurity into the working side of the wafer and the ions of n-type conductivity impurity in the non-working side of the wafer, repeated wafer chemical clean-up, re -implantation of the ions, aluminium layer application on both sides of the wafer, formation of non- rectifying contact by aluminium brazing and a passivating coating depositing on the working side of the wafer, and then two-stage post-implanted annealing. As a result of the method usage, the production of the sensitive element based on the planar technology.
PCT/RU2016/000043 2014-12-03 2016-02-02 Method of ionizing radiation sensor manufacturing WO2016089254A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2014148677/28A RU2575939C1 (en) 2014-12-03 2014-12-03 Method of making ionising radiation sensor
RU2014148677 2014-12-03

Publications (2)

Publication Number Publication Date
WO2016089254A2 WO2016089254A2 (en) 2016-06-09
WO2016089254A3 true WO2016089254A3 (en) 2016-08-04

Family

ID=55435557

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2016/000043 WO2016089254A2 (en) 2014-12-03 2016-02-02 Method of ionizing radiation sensor manufacturing

Country Status (2)

Country Link
RU (1) RU2575939C1 (en)
WO (1) WO2016089254A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2634324C1 (en) * 2016-05-18 2017-10-25 Публичное акционерное общество "Интерсофт Евразия", ПАО "Интерсофт Евразия" Ionizing radiation sensor based on silicon of crucible-free melting zone of p-type conductivity

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442592A (en) * 1980-01-31 1984-04-17 Josef Kemmer Passivated semiconductor pn junction of high electric strength and process for the production thereof
US4808542A (en) * 1986-08-11 1989-02-28 Siemens Aktiengesellschaft Process for the stabilization of PN junctions
US5283202A (en) * 1986-03-21 1994-02-01 Advanced Power Technology, Inc. IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions
US6794734B2 (en) * 2002-05-03 2004-09-21 Mia-Com Heterojunction P-I-N diode and method of making the same
EP2256820A2 (en) * 2009-05-25 2010-12-01 Nxp B.V. Photo-electronic device comprising a vertical p-n or p-i-n junction and manufacturing method thereof
RU2408955C1 (en) * 2009-06-29 2011-01-10 Федеральное государственное учреждение "Научно-производственный комплекс "Технологический центр" Московского Государственного института электронной техники" (ФГУ НПК "ТЦ" МИЭТ) P-i-n-diode neutron radiation converter

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442592A (en) * 1980-01-31 1984-04-17 Josef Kemmer Passivated semiconductor pn junction of high electric strength and process for the production thereof
US5283202A (en) * 1986-03-21 1994-02-01 Advanced Power Technology, Inc. IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions
US4808542A (en) * 1986-08-11 1989-02-28 Siemens Aktiengesellschaft Process for the stabilization of PN junctions
US6794734B2 (en) * 2002-05-03 2004-09-21 Mia-Com Heterojunction P-I-N diode and method of making the same
EP2256820A2 (en) * 2009-05-25 2010-12-01 Nxp B.V. Photo-electronic device comprising a vertical p-n or p-i-n junction and manufacturing method thereof
RU2408955C1 (en) * 2009-06-29 2011-01-10 Федеральное государственное учреждение "Научно-производственный комплекс "Технологический центр" Московского Государственного института электронной техники" (ФГУ НПК "ТЦ" МИЭТ) P-i-n-diode neutron radiation converter

Also Published As

Publication number Publication date
WO2016089254A2 (en) 2016-06-09
RU2575939C1 (en) 2016-02-27

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