WO2016053414A3 - Structures de détection de rayonnement et procédés pour les fabriquer - Google Patents

Structures de détection de rayonnement et procédés pour les fabriquer Download PDF

Info

Publication number
WO2016053414A3
WO2016053414A3 PCT/US2015/036926 US2015036926W WO2016053414A3 WO 2016053414 A3 WO2016053414 A3 WO 2016053414A3 US 2015036926 W US2015036926 W US 2015036926W WO 2016053414 A3 WO2016053414 A3 WO 2016053414A3
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
substrate
material layer
semiconductor material
trench
Prior art date
Application number
PCT/US2015/036926
Other languages
English (en)
Other versions
WO2016053414A2 (fr
Inventor
Rajendra P. Dahal
Ishwara B. Bhat
Yaron Danon
James Jian-Qiang Lu
Original Assignee
Rensselaer Polytechnic Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytechnic Institute filed Critical Rensselaer Polytechnic Institute
Priority to CA2952656A priority Critical patent/CA2952656A1/fr
Priority to EP15847783.6A priority patent/EP3158365A2/fr
Priority to KR1020177001814A priority patent/KR20170020899A/ko
Priority to CN201580034428.0A priority patent/CN106461800A/zh
Priority to US15/319,979 priority patent/US11677041B2/en
Publication of WO2016053414A2 publication Critical patent/WO2016053414A2/fr
Publication of WO2016053414A3 publication Critical patent/WO2016053414A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention concerne des structures de détection de rayonnement et des procédés pour les fabriquer. Les procédés comprennent, par exemple : l'obtention d'un substrat, le substrat comprenant au moins une tranchée s'étendant dans le substrat à partir d'une surface supérieure de celui-ci ; et la formation épitaxiale d'une couche de matériau semi-conducteur sensible aux rayonnements sur une ou plusieurs parois latérales de la tranchée ou des tranchées du substrat, la couche de matériau semi-conducteur sensible aux rayonnements générant des porteurs de charge en réponse à un rayonnement incident. Dans un mode de réalisation, les parois latérales de la tranchée ou des tranchées du substrat comprennent une surface (111) du substrat, ce qui facilite la formation épitaxiale de la couche de matériau semi-conducteur sensible aux rayonnements. Dans un autre mode de réalisation, la couche de matériau semi-conducteur sensible aux rayonnement comprend du nitrure de bore hexagonal et la formation épitaxiale comprend la fourniture du nitrure de bore hexagonal avec un axe a aligné parallèlement aux parois latérales de la tranchée.
PCT/US2015/036926 2014-06-23 2015-06-22 Structures de détection de rayonnement et procédés pour les fabriquer WO2016053414A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA2952656A CA2952656A1 (fr) 2014-06-23 2015-06-22 Structures de detection de rayonnement et procedes pour les fabriquer
EP15847783.6A EP3158365A2 (fr) 2014-06-23 2015-06-22 Structures de détection de rayonnement et procédés pour les fabriquer
KR1020177001814A KR20170020899A (ko) 2014-06-23 2015-06-22 방사선 검출 구조물 및 그의 제조 방법
CN201580034428.0A CN106461800A (zh) 2014-06-23 2015-06-22 辐射检测结构及其制造方法
US15/319,979 US11677041B2 (en) 2014-06-23 2015-06-22 Radiation-detecting structures and fabrication methods thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462015605P 2014-06-23 2014-06-23
US62/015,605 2014-06-23

Publications (2)

Publication Number Publication Date
WO2016053414A2 WO2016053414A2 (fr) 2016-04-07
WO2016053414A3 true WO2016053414A3 (fr) 2016-05-19

Family

ID=55631744

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/036926 WO2016053414A2 (fr) 2014-06-23 2015-06-22 Structures de détection de rayonnement et procédés pour les fabriquer

Country Status (6)

Country Link
US (1) US11677041B2 (fr)
EP (1) EP3158365A2 (fr)
KR (1) KR20170020899A (fr)
CN (1) CN106461800A (fr)
CA (1) CA2952656A1 (fr)
WO (1) WO2016053414A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10107924B2 (en) * 2015-07-11 2018-10-23 Radiation Detection Technologies, Inc. High-efficiency microstructured semiconductor neutron detectors and process to fabricate high-efficiency microstructured semiconductor neutron detectors
KR102317740B1 (ko) * 2016-05-12 2021-10-28 글로벌웨이퍼스 씨오., 엘티디. 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성
WO2019019054A1 (fr) * 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. Détecteur de rayonnement avec dispositif de dépolarisation intégré
EP3658962A4 (fr) * 2017-07-26 2021-02-17 Shenzhen Xpectvision Technology Co., Ltd. Détecteur de rayonnement et son procédé de fabrication
US11681060B2 (en) * 2020-06-02 2023-06-20 Schlumberger Technology Corporation Rugged hexagonal boron nitride solid state detector
CN114019561A (zh) * 2021-11-08 2022-02-08 中国原子能科学研究院 一种中子探测器及探测系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7095006B2 (en) * 2003-12-16 2006-08-22 International Business Machines Corporation Photodetector with hetero-structure using lateral growth
US7297564B1 (en) * 2006-05-02 2007-11-20 Sharp Laboratories Of America, Inc. Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
US8367528B2 (en) * 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5330611A (en) * 1989-12-06 1994-07-19 General Motors Corporation Cubic boron nitride carbide films
US5410170A (en) 1993-04-14 1995-04-25 Siliconix Incorporated DMOS power transistors with reduced number of contacts using integrated body-source connections
US6545281B1 (en) 2001-07-06 2003-04-08 The United States Of America As Represented By The United States Department Of Energy Pocked surface neutron detector
US7592601B2 (en) 2001-10-26 2009-09-22 Innovative American Technology Inc. Radiation detection system using solid-state detector devices
AU2003296919A1 (en) 2002-10-29 2004-05-25 The Regents Of The University Of Michigan High-efficiency neutron detectors and methods of making same
US7372009B1 (en) * 2002-12-18 2008-05-13 The United States Of America As Represented By The Secretary Of The Navy Solid-state thermal neutron detector
US7183701B2 (en) 2003-05-29 2007-02-27 Nova Scientific, Inc. Electron multipliers and radiation detectors
US7129488B2 (en) * 2003-12-23 2006-10-31 Sharp Laboratories Of America, Inc. Surface-normal optical path structure for infrared photodetection
US8558188B2 (en) 2005-04-27 2013-10-15 Lawrence Livermore National Security, Llc Method for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>1.0E4)
WO2007109535A2 (fr) 2006-03-16 2007-09-27 Kansas State University Research Foundation Détecteurs de neutrons à semiconducteurs perforés, de haute efficacité et ne fonctionnant pas en continu, procédés de fabrication associés, bras de mesure et modules de détection comportant ces détecteurs
US8624105B2 (en) 2009-05-01 2014-01-07 Synkera Technologies, Inc. Energy conversion device with support member having pore channels
CN102695967A (zh) 2009-10-19 2012-09-26 布鲁克哈文科学协会有限责任公司 3d沟槽电极检测器
GB2474721A (en) 2009-10-26 2011-04-27 Finphys Oy Neutron Detector
US8507872B2 (en) * 2010-03-23 2013-08-13 Nova Scientific, Inc. Neutron detection
GB201107076D0 (en) 2011-04-27 2011-06-08 Finphys Oy Neutron detector
US8860161B2 (en) * 2011-07-07 2014-10-14 Quantum Devices, Llc Neutron detection using GD-loaded oxide and nitride heterojunction diodes
US20130292685A1 (en) * 2012-05-05 2013-11-07 Texas Tech University System Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures
US9490318B2 (en) 2012-06-15 2016-11-08 Lawrence Livermore National Security, Llc Three dimensional strained semiconductors
US8778715B2 (en) 2012-06-25 2014-07-15 Radiation Detection Technologies, Inc. Method of fabricating a neutron detector such as a microstructured semiconductor neutron detector
US8741688B2 (en) * 2012-07-24 2014-06-03 Micron Technology, Inc. Methods of forming a metal chalcogenide material
US9151853B2 (en) * 2012-11-07 2015-10-06 Rensselaer Polytechnic Institute Neutron-detecting apparatuses and methods of fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7095006B2 (en) * 2003-12-16 2006-08-22 International Business Machines Corporation Photodetector with hetero-structure using lateral growth
US7297564B1 (en) * 2006-05-02 2007-11-20 Sharp Laboratories Of America, Inc. Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
US8367528B2 (en) * 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MAJETY ET AL.: "Metal- semiconductor -metal neutron detectors based on hexagonal boron nitride epitaxial layers.", PROC. OF SPIE, vol. 8507, 24 October 2012 (2012-10-24), Retrieved from the Internet <URL:http://spie.org/Publications/Proceedings/Paper/10.1117/12.940748> *

Also Published As

Publication number Publication date
US11677041B2 (en) 2023-06-13
WO2016053414A2 (fr) 2016-04-07
US20170133543A1 (en) 2017-05-11
CA2952656A1 (fr) 2016-04-07
CN106461800A (zh) 2017-02-22
KR20170020899A (ko) 2017-02-24
EP3158365A2 (fr) 2017-04-26

Similar Documents

Publication Publication Date Title
WO2016053414A3 (fr) Structures de détection de rayonnement et procédés pour les fabriquer
IL255308A0 (en) A photocathode that includes a field transmitter array on a Zorn substrate with a boron layer
JP2016518713A5 (fr)
MY190432A (en) Multijunction photovoltaic device
SG10201903242QA (en) Methods for singulating semiconductor wafer
WO2015147963A3 (fr) Couche anti-réflexion pour capteur rétroéclairé
WO2017019632A8 (fr) Appareil d&#39;absorption de lumière à base de multiples tranches et ses applications
WO2016022998A3 (fr) Dispositif intégré de compartimentation temporelle de photons reçus
MY188387A (en) Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same
EP3362852A4 (fr) Substrat de matrice et dispositif à semi-conducteur contenant ce substrat, et procédé de fabrication de ce substrat
TW201613098A (en) Semiconductor device
EP3848955A3 (fr) Décollage de plaquette par ablation faisant intervenir des rayons infrarouges à longueur d&#39;onde moyenne
EP3183745A4 (fr) Modules opto-électroniques présentant un substrat de silicium, et procédés de fabrication de tels modules
MY184096A (en) Method and apparatus for forming backside die planar devices and saw filter
WO2016075150A3 (fr) Dispositif optoélectronique et utilisation d&#39;un émetteur double en tant que substance de conversion de longueur d&#39;onde
EP2966695A3 (fr) Cellule solaire
TW201613122A (en) A photovoltaic cell and a method of forming a photovoltaic cell
JP2015079946A5 (fr)
EP2980858A3 (fr) Cellule solaire et son procede de fabrication
MY183477A (en) Passivation of light-receiving surfaces of solar cells with crystalline silicon
WO2014144698A3 (fr) Couches semi-conductrices épitaxiales à croissance latérale de grande superficie
MY185700A (en) In-cell bypass diode
TW201612985A (en) Semiconductor device structure and method for forming the same
TW201613099A (en) Silicon carbide semiconductor device, method for manufacturing silicon carbide semiconductor device, and method for designing silicon carbide semiconductor device
GB2541146A (en) Method of manufacturing a germanium-on-insulator substrate

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15847783

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2952656

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: 15319979

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

REEP Request for entry into the european phase

Ref document number: 2015847783

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2015847783

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20177001814

Country of ref document: KR

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15847783

Country of ref document: EP

Kind code of ref document: A2