Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
  • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/54—Controlling or regulating the coating process
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
  • H01J37/3405—Magnetron sputtering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3414—Targets
  • H01J37/3417—Arrangements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3444—Associated circuits
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3464—Operating strategies

Definitions

• Embodiments described herein relate to layer deposition by sputtering from a target.
• the present disclosure relates to sputtering on large area substrates, more particularly for static deposition processes.
• Embodiments relate specifically to a method and an apparatus for depositing a layer of a material on a substrate.
• substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process etc.
• PVD physical vapor deposition
• CVD chemical vapor deposition
• PECVD plasma enhanced chemical vapor deposition
• the process is performed in a process apparatus or process chamber where the substrate to be coated is located.
• a deposition material is provided in the apparatus.
• a plurality of materials, but also oxides, nitrides or carbides thereof, may be used for deposition on a substrate.
• Coated materials may be used in several applications and in several technical fields. For instance, substrates for displays are often coated by a physical vapor deposition (PVD) process.
• PVD physical vapor deposition
• a power supply creates an electric potential between a cathode and one or more anodes that are placed in a plasma chamber containing the process gases that form the plasma.
• the plasma acts upon the material of a target (also referred to as a sputtering source) placed in the plasma chamber that normally comprises the cathode surface.
• a target also referred to as a sputtering source
• Plasma ions are accelerated towards the target and cause target material to be dislodged from the cathode surface on impact.
• the dislodged target material is then deposited on a substrate to form a film (e.g., thin film).
• the film may constitute material sputtered by the plasma from the target surface, which is the case of non-reactive sputtering.
• the film may be the result of a reaction between the target material and some other element included in the plasma or process gases, which is the case of reactive sputtering.
• the sputter material i.e. the material to be deposited on the substrate
• the target may be made from the material to be deposited or may have a backing element on which the material to be deposited is fixed.
• the target including the material to be deposited is supported or fixed in a predefined position in a deposition chamber.
• the target is connected to a rotating shaft or a connecting element connecting the shaft and the target.
• Sputtering can be conducted as magnetron sputtering, wherein a magnet assembly is utilized to confine the plasma for improved sputtering conditions.
• the plasma confinement can also be utilized for adjusting the distribution of the material to be deposited on the substrate.
• the plasma distribution, the plasma characteristics and other deposition parameters need to be controlled in order to obtain a predetermined layer deposition on the substrate. This is particularly beneficial for large area deposition, e.g. for manufacturing displays on large area substrates. Further, uniformity and process stability can be particularly difficult to achieve for static deposition processes, wherein the substrate is not moved continuously through a deposition zone.
• a method for deposition of material includes sputtering material from a cathode array, wherein adjacent cathodes of the cathode array are operated to have one or more time intervals, wherein only one cathode of the adjacent cathodes sputters on the same substrate during the one or more time intervals.
• a method for deposition of material is provided.
• the method includes sputtering material from a first group of cathodes and sputtering material from a second group of cathodes, wherein the first group of cathodes and the second group of cathodes comprise two or more cathodes each, wherein a first cathode of the first group of cathodes is adjacent a first cathode of the second group of cathodes and a second cathode of the first group of cathodes is adjacent a second cathode of the second group of cathodes, wherein the first group of cathodes is active during one or more time intervals for which the second group of cathodes is inactive.
• a method for deposition of material on a substrate includes sputtering material from a first group of cathodes and sputtering material from a second group of cathodes, wherein the first group of cathodes and the second group of cathodes comprise two or more cathodes each, wherein a first cathode of the first group of cathodes is adjacent a first cathode of the second group of cathodes and a second cathode of the first group of cathodes is adjacent a second cathode of the second group of cathodes, wherein the first group of cathodes sputters material in a first direction during one or more time intervals for which the second group of cathodes sputters material in a second direction.
• a method for deposition of material on a substrate includes sputtering material from a first group of cathodes and sputtering material from a second group of cathodes, wherein the first group of cathodes is active while the second group of cathodes is inactive, wherein a first group of magnet arrangements of the first group of cathodes is oriented in a first direction when the first group of cathodes is active and a second group of magnet arrangements of the second group of cathodes is oriented in a second direction, different from the first direction, when the second group of cathodes is inactive.
• a method for deposition of material on a substrate includes sputtering with at least two first cathodes onto a first substrate with a first cathode sputter time interval sequence; and sputtering with at least one second cathode between the two first cathodes onto the first substrate with a second cathode sputter time interval sequence that is different from the first cathode sputter time interval sequence.
• an apparatus for deposition of material includes a process chamber and a cathode array.
• the cathode array has a first group of cathodes and a second group of cathodes comprising one or more cathodes each. Adjacent cathodes of the cathode array are configured to be operated to have one or more time intervals, wherein only one cathode of the adjacent cathodes sputters on the same substrate during the one or more time intervals.
• an apparatus for deposition of material on a substrate includes a process chamber and a cathode array.
• the cathode array has a first group of cathodes and a second group of cathodes comprising one or more cathodes each.
• the first group of cathodes and the second group of cathodes work in an alternating cathode sputtering mode such that the first group of cathodes is active while the second group of cathodes is inactive.
• an apparatus for deposition of material on a substrate includes a process chamber and a cathode array.
• the cathode array has a first group of cathodes and a second group of cathodes comprising one or more cathodes each.
• the first group of cathodes and the second group of cathodes work in an alternating cathode sputtering mode such that the first group of cathodes sputters material in a first direction while the second group of cathodes sputters material in a second direction.
• Fig. 1 shows a top view of a cathode array configuration, according to the state of the art
• Fig. 2A shows a top view of an apparatus for processing a substrate using alternating cathode sputtering, according to embodiments described herein
• Fig. 2B shows a top view of an apparatus for processing a substrate connected to a power supply using alternating cathode sputtering, according to embodiments described herein;
• Fig. 3A shows a top view of a cathode array configuration working in an alternating cathode sputtering mode, according to embodiments described herein;
• Fig. 3B shows a top view of an alternative cathode array configuration working in an alternating cathode sputtering, according to embodiments described herein;
• Fig. 4 shows a top view of an apparatus for processing two substrates at the same time using alternating cathode sputtering, according to embodiments described herein;
• Fig. 5 shows a top view of a cathode array configuration, used in the apparatus of figure 4, working in an alternating cathode sputtering mode, according to embodiments described herein;
• Fig. 6 shows a graph that illustrates an example of DC power produced by a DC power supply for a cathode array of a process chamber, according to embodiments described herein;
• Fig. 7A shows a box illustrating a method for static deposition of material on a substrate, according to embodiments described herein;
• Fig. 7B shows a flow chart illustrating a method for static deposition of material on a substrate, according to embodiments described herein.
• the plasma may be more or less localized close to the target surface of the different cathodes, causing a different intensity of plasma influence and/or interaction between the target and the growing layer on the substrate.
• This different intensity may have an impact on some of the layer properties, e. g. film morphology and film stress.
• alternating deposition mode is particularly beneficial for deposition processes wherein the substrate is in a static position.
• alternating deposition mode is used synonymously with "alternating cathode sputtering mode”.
• the deposition process may be split in two phases: during the first phase power may be applied to every second cathode, while the other cathodes may be off. In the second phase power may be applied to those cathodes which were off during the first phase, while the cathodes which were sputtering during the first phase may be off now. Accordingly, there are one or more time intervals, wherein adjacent cathodes do not sputter on the same substrate during the one or more time intervals and/or wherein only one cathode of the adjacent cathodes sputters on the same substrate during the one or more time intervals.
• local plasma conditions may be changed by an alternatingcathode sputtering mode such that every third cathode, every fourth cathode, every fifth cathode or every further non-adjacent cathode may be operating cathodes, i.e. may be switched on at the same time and/or may sputter material in a first direction at the same time.
• two cathodes, three cathodes, four cathodes or even further cathodes, which are in between the operating cathodes may be switched off at the same time and/or may sputter material in a second direction at the same time.
• FIG. 1 shows a deposition apparatus 100 with a common cathode array 105 and a substrate 120.
• the cathode array comprises one or more individual cathodes 110.
• Each individual cathode has a target of the material to be deposited on the substrate and a magnet assembly (not shown).
• the magnet assembly is utilized to generate a plasma area 115 on the cathode to locally enhance erosion of the target.
• the cathode array 105 of FIG. 1 works in a synchronous deposition mode. Accordingly, the plasma area 115 of the individual cathodes 110 is not totally determined by the properties of the single cathodes but shows a certain amount of interaction with the plasma areas of adjacent cathodes of the cathode array. This also impacts the plasma interaction between the target and the growing layer on the substrate. As a result, some of the film properties of the growing layer, such as film morphology and film stress, may be impacted.
• Embodiments described herein relate to methods and apparatus for static deposition of material on a substrate, wherein the cathode array works in an alternating cathode sputtering mode.
• the alternating cathode sputtering mode reduces interactionbetween sputtering plasma areas of adjacent cathodes. Accordingly, the influence and/or interaction of the sputtering plasma with the growing layer on the substrate may be improved.
• embodiments of the present disclosure allow for improved layer properties, such as film morphology and film stress.
• Adjacent cathodes as described herein are neighboring cathodes, provided next to each other and spaced apart along a substrate transport direction.
• a method for static deposition of material on a substrate includes sputtering material from a cathode array, wherein the cathode array works in an alternating cathode sputtering mode, such that adjacent cathodes of the cathode array do not have adjacent sputtering plasma areas.
• a method for static deposition of material on a substrate includes sputtering material from a first group of cathodes and sputtering material from a second group of cathodes, wherein the first group of cathodes and the second group of cathodes work in an alternating cathode sputtering mode such that the first group of cathodes is active while the second group of cathodes is inactive.
• a method for static deposition of material on a substrate includes sputtering material from a first group of cathodes and sputtering material from a second group of cathodes, wherein the first group of cathodes and the second group of cathodes work in an alternating cathode sputtering mode such that the first group of cathodes sputters material in a first direction while the second group of cathodes sputters material in a second direction.
• a method for static deposition of material on a substrate includes sputtering material from a first group of cathodes and sputtering material from a second group of cathodes, wherein the first group of cathodes and the second group of cathodes work in an alternating cathode sputtering mode such that the first group of cathodes is active while the second group of cathodes is inactive, wherein a first group of magnet arrangements of the first group of cathodes is oriented in a first direction when the first group of cathodes is active and a second group of magnet arrangements of the second group of cathodes is oriented in a second direction, different from the first direction, when the second group of cathodes is inactive
• the cathode array 205 may have a first group of cathodes 220 and a second group of cathodes 230.
• the first group of cathodes 220 and the second group of cathodes 230 may have one or more individual cathodes 210 each, wherein the cathode array 205 may work in an alternating cathode sputtering mode such that adjacent cathodes 210 of the cathode array may not have adjacent sputtering plasma areas 215.
• Each individual cathode may have a target of the material to be deposited on the substrate 120 and a magnet assembly 300 (shown in FIGS. 3A and 3B).
• the magnet assembly 300 is utilized to generate a plasma area 215 on the cathode to locally enhance erosion of the target.
• plasma area is used herein synonymously with “sputtering plasma area”.
• the individual cathodes 210 may be active or inactive.
• a cathode is active when material is being sputtered from the cathode. More particularly, a cathode is active when power is applied to the cathode. On the contrary, a cathode is inactive when material is not being sputtered from the cathode. More particularly, a cathode is inactive when power is not applied to the cathode.
• active is used synonymously with “switched-on” and the term “inactive” is used synonymously with "switched-off '.
• FIG. 2B shows a deposition apparatus 200 with a cathode array 205, anodes 211 and a substrate 120.
• the cathode array 205 may work in an alternating cathode sputtering mode.
• the cathode array 205 may comprise a first group of cathodes 220 and a second group of cathodes 230.
• the first group of cathodes 220 and the second group of cathodes 230 may have one or more individual cathodes 210 each.
• the individual cathodes 210 may be connected to different power supplies. As a result, there may be as many power supplies as individual cathodes.
• first group of cathodes 220 may be connected to a first power supply 225 and the second group of cathodes 230 may be connected to a second power supply 235.
• First power supply 225 and second power supply 235 may be different and independent from each other.
• a power controller (not shown) may be connected to the power supply. Accordingly, individual cathodes 210 can be switched on and/or switched off to provide an alternating cathode sputtering mode. According to further embodiments, which can be combined with other embodiments described herein, the power controller may be connected to the first power supply 225 and to the second power supply 235. Accordingly, the first group of cathodes 220 may be active while the second group of cathodes 230 may be inactive.
• the deposition apparatus may further comprise a controller for switching between the first group of cathodes and the second group of cathodes of the cathode array.
• the controller may be a power controller.
• the controller may be a rotation controller.
• the deposition method may include switching between a first group of cathodes and a second group of cathodes of the cathode array.
• the first power supply 225 and the second power supply 235 may be a DC power supply providing electric charge in a constant direction. According to further embodiments, the first power supply 225 and the second power supply 235 may be an AC, RF or MF power supply providing electric charge in alternate directions.
• cathodes 210 may be operated with a resistance of about 1 ⁇ , such that when they are switched off there is a slow discharging of the cathode. Accordingly, the switched-off cathode may be floating, that is, not on a defined potential. The switched-off cathode may not be operated by a power supply and accordingly, may not participate in plasma generation, which may be conducted between an adjacent cathode and the corresponding anode. As a result, interaction between sputtering plasma areas of adjacent cathodes may be reduced and the influence and/or interaction of the sputtering plasma with the growing layer on the substrate may be improved. [0039] As illustrated in FIG.
• the anodes 211 may be spaced apart from each other and may be adjacent individual cathodes 210. Furthermore, the anodes 211 may be connected to the same power supply as the cathode they are adjacent to for collecting electrons during sputtering. All anodes 211, also anodes connected to different power supplies, may be electrically connected to each other. On the other hand, cathodes connected to different power supplies may not be electrically connected to each other. For instance, the first group of cathodes 220 and the second group of cathodes 230 may not be electrically connected to each other.
• FIG. 3A shows an embodiment of a cathode array 205 working in an alternating cathode sputtering mode.
• the cathode array 205 may comprise a first group of cathodes 220 and a second group of cathodes 230.
• the first group of cathodes 220 and the second group of cathodes 230 may have one or more individual cathodes 210 each.
• the individual cathodes 210 may be planar cathodes having a magnet assembly 300.
• FIG. 3A illustrates planar cathodes, which may also be utilized for other embodiments described herein.
• rotatable cathodes may also be provided for embodiments described with respect to FIG. 3A.
• the magnet assemblies can be provided within a backing tube or with the target material tube to configure a rotatable magnet cathode array.
• the magnet assemblies 300 of the individual cathodes 210 may have the same rotational positions, that is, all the magnet assemblies 300 of the individual cathodes 210 may be facing in the same direction. More particularly, all the magnet assemblies 300 of the individual cathodes 210 may be facing toward the substrate.
• the first group of cathodes 220 may be active while the second group of cathodes 230 is inactive.
• the second group of cathodes may be active while the first group of cathodes is inactive. As a result, interactionbetween sputtering plasma areas of adjacent cathodes may be reduced.
• the magnet assemblies 300 of the individual cathodes 210 may have different rotational positions, that is, magnet assemblies 300 of different individual cathodes 210 may be facing different directions.
• a first group of magnet assemblies of the first group of cathodes may be oriented in a first direction when the first group of cathodes is active and a second group of magnet assemblies of the second group of cathodes may be oriented in a second direction, different from the first direction, when the second group of cathodes is inactive.
• a second group of magnet assemblies of the second group of cathodes may be oriented in a first direction when the second group of cathodes is active and a first group of magnet assemblies of the first group of cathodes may be oriented in a second direction, different from the first direction, when the first group of cathodes is inactive. Accordingly, the discharge conditions for the active cathodes operating at the substrate side may change. As a result, interactionbetween sputtering plasma areas of adjacent cathodes may be reduced.
• the first direction may correspond to the direction where the substrate 120 is placed.
• the second direction may correspond to the direction opposite to the first direction.
• the cathode array of FIG. 3B may also be usable for center-array layouts as the one shown in FIG. 4.
• center-array layouts two substrates in the same process chamber may be deposited at the same time using an alternating cathode sputtering mode.
• a deposition apparatus 400 is shown with a process chamber 450, a cathode array 405 and two substrates 460, 470 in the same process chamber.
• the cathode array 405 may have a first group of cathodes 420 and a second group of cathodes 430.
• the first group of cathodes 420 and the second group of cathodes 430 may have one or more individual cathodes 410 each, wherein the cathode array 405 may work in an alternating cathode sputtering mode such that adjacent cathodes 410 of the cathode array may not have adjacent sputtering plasma areas 415.
• Each individual cathode 410 may have a target of the material to be deposited on the substrates 460, 470 and a magnet assembly 500 (shown in FIG. 5).
• the magnet assembly 500 may be utilized to generate a plasma area 415 on the cathode to locally enhance erosion of the target.
• the individual cathodes 410 may be rotatable cathodes having a magnet assembly 500.
• the magnet assemblies 500 can be provided within a backing tube or with the target material tube to configure a rotatable magnet cathode array 405.
• the magnet assemblies 500 may further have different rotational positions, that is, magnet assemblies 500 of different individual cathodes 410 may be facing different directions.
• a rotation controller (not shown) may also be provided.
• the rotation controller may switch between a first group of cathodes 420 and a second group of cathodes 430 of the cathode array 405.
• the rotation controller may be connected to each cathode 410. Accordingly, individual cathodes 410 can switch their sputtering direction to provide an alternating cathode sputtering mode.
• the rotation controller may be connected to the first group of cathodes 420 and to the second group of cathodes 430. As a result, the first group of cathodes 420 and the second group of cathodes 430 can switch their sputtering direction to provide an alternating cathode sputtering mode.
• Embodiments of the present disclosure relate to methods and apparatus for static deposition of material on a substrate including sputtering material on two substrates at the same time.
• a rotatable magnet cathode array may be advantageous with respect to the at least two coating positions on opposing sides of the cathode array.
• the number of substrates, which can be coated simultaneously may refer to the number of coating positions or the number of sides of the cathodes, where plasma can be generated.
• different coatings can be achieved at the substrates located in the various coating positions, particularly the different coatings can be the same material deposited at the substrates located in different coating positions.
• single coating processes may also be carried out alternately at the different coating positions.
• plasma can only be generated at one side of the cathode array so that the coating area may be changed by rotating or pivoting the magnet cathode array from one coating position to another.
• the coating area can pivot between the first and the second side of the magnet cathode array, or additional sides of the cathode array and the coating may be carried out one after the other in the different coating positions.
• the efficiency of the deposition method and deposition apparatus is improved, since during the time without coating, substrates to be coated can be supplied to and/or removed from the substrate positions not used for coating.
• one rotatable magnet cathode array may be used in a single process chamber for coating two substrates at the same time.
• a lot of equipment can be saved.
• control means for only one magnet cathode array have to be provided.
• Other components like locks for locking-in and/or removing the substrates into and/or out of the process chamber can also be reduced in number.
• material usage and equipment for providing transport means for the substrates can also be reduced.
• the magnet assemblies 500 of the individual cathodes 410 may have different rotational positions, that is, magnet assemblies 500 of different individual cathodes 410 may be facing different directions.
• the magnet assemblies of the first group of cathodes 420 may be facing toward a first direction 520 while the magnet assemblies of the second group of cathodes 430 may be facing toward a second direction 530.
• the magnet assemblies of the second group of cathodes 430 may be facing toward a first direction 520 while the magnet assemblies of the first group of cathodes 420 may be facing toward a second direction 530.
• magnet assemblies 500 of different individual cathodes 410 may be facing different directions and may sputter material in different directions.
• the first group of cathodes 420 may sputter material in a first direction 520 while the second group of cathodes 430 sputters material in a second direction 530.
• the first group of cathodes 420 may sputter material in a second direction 530, while the second group of cathodes 430 sputters material in a first direction 520. Accordingly, interactionbetween sputtering plasma areas of adjacent cathodes may be reduced.
• the influence and/or interaction of the sputtering plasma with the growing layer on the substrate may be improved, in addition to the advantages described above for a center-array layout with a rotatable magnet cathode array. Accordingly, there are one or more time intervals, wherein adjacent cathodes do not sputter on the same substrate during the one or more time intervals and/or wherein only one cathode of the adjacent cathodes sputters on the same substrate during the one or more time intervals.
• the first direction 520 may correspond to the direction where the first substrate 460 is placed and the second direction 530 may correspond to the direction where the second substrate 470 is placed.
• the first direction may be opposite to the second direction.
• the first direction may have an angle of 90° or more with the second direction, particularly the first direction may have an angle of 180° or more with the second direction, more particularly the first direction may have an angle of 270° with the second direction.
• the first group of cathodes and the second group of cathodes may have a resistance of 1 ⁇ or less, particularly a resistance of 0,5 ⁇ or less, more particularly a resistance of 0,1 ⁇ or less when they are inactive.
• the deposition method includes switching between the first group of cathodes and the second group of cathodes within 1 second or more, particularly within 5 seconds or more, more particularly within 10 seconds or more.
• the deposition method includes switching between the first group of cathodes and the second group of cathodes 11 times or less, particularly 5 times or less, more particularly 3 times or less.
• the first group of cathodes comprises every second cathode of the cathode array and the second group of cathodes comprises the rest of the cathodes.
• the first group of cathodes comprises every third cathode, every fourth cathode, every fifth cathode or every further non-adjacent cathode of the cathode array and the second group of cathodes comprises the rest of the cathodes.
• the first group of cathodes and the second group of cathodes may be connected to an AC, DC or RF power supply.
• the power supply may be a DC power supply.
• the power supply may be an AC, RF or MF power supply.
• the deposition apparatus may comprise two or more anodes adjacent to the one or more cathodes of the first group of cathodes and the second group of cathodes.
• the deposition apparatus may comprise one planar anode extending along the horizontal direction. "Horizontal direction" as used herein may be understood as the substrate transport direction.
• the planar anode and the individual cathodes may be connected to one or more power supplies for collecting electrons during sputtering.
• the one or more cathodes of the first group of cathodes and the second group of cathodes may be rotatable cathodes, wherein each rotatable cathode may have a magnet assembly.
• each rotatable cathode may have one or more magnet assemblies, particularly each rotatable cathode may have two magnet assemblies.
• FIG. 6 shows a graph illustrating DC power produced by a DC power supply (e. g., power supply 225 and 235 of FIG. 2A) for a cathode array working in an alternating cathode sputtering mode.
• the graph illustrates voltage on the y-axis and time increasing to the right on the x-axis.
• DC power as understood herein is directed to the flow of electric charge in a constant direction, contrary to AC power where the electric charge flows in alternate directions.
• DC voltage may be applied in an alternating mode such that DC pulses 610 may be generated.
• DC power may be alternately switched on and off without voltage reversal.
• Pulses 610 may have a pulse width 615 (i.e., pulse duration) and a pulse height 635.
• the pulses 610 may all have the same pulse height. According to further embodiments, the pulses 610 may have different pulse height.
• pulses 610 may be generated at frequencies lower than 1 Hz. For instance, for 60 seconds total sputtering time, power may be switched off 11 times or less, particularly 5 times or less, more particularly 3 times or less. Accordingly, there are one or more time intervals, wherein adjacent cathodes do not sputter on the same substrate during the one or more time intervals and/or wherein only one cathode of the adjacent cathodes sputters on the same substrate during the one or more time intervals.
• pulse width 615 corresponds to the sputtering time.
• the pulse widths 615 may be defined to have a duration longer than a response time of a control loop (e.g., proportional-integral- derivative (PID) control loop, open loop control loop) associated with the DC power supply to allow for time to accurately produce the DC power pulses 610.
• a control loop e.g., proportional-integral- derivative (PID) control loop, open loop control loop
• DC voltage may be applied to a first group of cathodes generating first pulses 620, and DC voltage may be applied to a second group of cathodes generating second pulses 630.
• a power controller may be connected to each power supply for switching between a first group of cathodes and a second group of cathodes of the cathode array. Accordingly, an alternating cathode sputtering mode can be provided.
• voltage may be applied to both the first group of cathodes and the second group of cathodes at the same time, while the magnet assemblies of the first group of cathodes and the second group of cathodes may be facing different directions.
• the periodicity of the magnetic field is broken and the influence and/or interaction of the sputtering plasma with the growing layer on the substrate may be improved.
• the pulse width of the first pulses 620 may be equal to the pulse width of the second pulses 630.
• the pulse width of the first pulses may be different to the pulse width of the second pulses.
• the sputtering time of the first group of cathodes may be different from the sputtering time of the second group of cathodes.
• the sputtering time of the first group of cathodes may be two times the sputtering time of the second group of cathodes.
• the sputtering time corresponding to the pulse width 615 may be equal to the inactive time 640 (i.e., the time the cathodes are inactive). According to alternative embodiments, the sputtering time corresponding to the pulse width 615 may be different to the inactive time 640. More particularly, the sputtering time corresponding to the pulse width 615 may be longer than the inactive time 640.
• the sputtering according to the described embodiments can be conducted with two or more cathodes.
• an array of cathodes having 6 or more cathodes, e.g. 10 or more cathodes, may be beneficial.
• the cathode array may be provided in one vacuum chamber.
• the distances between adjacent cathodes may not be equal for all pairs of proximate or adjacent cathodes. Accordingly, it may be possible to select the positions of the cathodes within the plane of arrangement as appropriate for the specific circumstances of the coating process to be applied in order to achieve homogenous layer properties over the coated substrate.
• the distances between cathodes of outer pairs of proximate cathodes of the cathode array may be smaller than the distances between cathodes of inner pairs of cathodes of the cathode array.
• homogeneity e.g. with respect to layer thickness
• a smaller distance between the pairs of adjacent cathodes or targets, respectively, in the outer area may provides more coating material and may solve the problem of less coating material at the margin of the substrate or the coating area.
• a dynamic sputtering i.e. an inline process where the substrate moves continuously or quasi-continuously adjacent to the deposition source, may be easier due to the fact the process can be stabilized prior to the substrates moving into a deposition area, and then held constant as substrates pass by the deposition source.
• a dynamic deposition can have other disadvantages, e.g. particle generation. This might particularly apply for TFT backplane deposition.
• a static sputtering can be provided, e.g. for TFT processing, wherein the plasma can be stabilized prior to deposition on the pristine substrate.
• a static deposition process which is different as compared to dynamic deposition processes, does not exclude any movement of the substrate as would be appreciated by a skilled person.
• a static deposition process can include, for example, a static substrate position during deposition, an oscillating substrate position during deposition, an average substrate position that is essentially constant during deposition, a dithering substrate position during deposition, a wobbling substrate position during deposition, a deposition process for which the cathodes provided in one chamber, i.e. a predetermined set of cathodes provided in the chamber, a substrate position wherein the deposition chamber has a sealed atmosphere with respect to neighboring chambers, e.g.
• a static deposition process can be understood as a deposition process with a static position, a deposition process with an essentially static position, or a deposition process with a partially static position of the substrate.
• a static deposition process can be clearly distinguished from a dynamic deposition process without the necessity that the substrate position for the static deposition process is fully without any movement during deposition.
• a deviation from a fully static substrate position e.g.
• oscillating, wobbling or otherwise moving substrates as described above can additionally or alternatively be provided by a movement of the cathodes or the cathode array, e.g. wobbling, oscillating or the like.
• the substrate and the cathodes (or the cathode array) can move relative to each other, e.g. in substrate transport direction, in a lateral direction essentially perpendicular to the substrate transport direction or both.
• step 702 material is sputtered from a cathode array, wherein the cathode array works in an alternating cathode sputtering mode, such that adjacent cathodes of the cathode array do not have adjacent sputtering plasma areas.
• step 702 material is sputtered from a first group of cathodes.
• step 704 material is sputtered from a second group of cathodes, wherein the first group of cathodes and the second group of cathodes work in an alternating cathode sputtering mode such that the first group of cathodes is active while the second group of cathodes is inactive.
• step 702 material is sputtered from a first group of cathodes.
• step 704 material is sputtered from a second group of cathodes, wherein the first group of cathodes and the second group of cathodes work in an alternating cathode sputtering mode such that the first group of cathodes sputters material in a first direction while the second group of cathodes sputters material in a second direction.

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• 2014
  • 2014-09-30 WO PCT/EP2014/070941 patent/WO2016050284A1/en active Application Filing
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