WO2016042549A3 - Apparatus and method for imparting direction-selective light attenuation - Google Patents

Apparatus and method for imparting direction-selective light attenuation Download PDF

Info

Publication number
WO2016042549A3
WO2016042549A3 PCT/IL2015/050927 IL2015050927W WO2016042549A3 WO 2016042549 A3 WO2016042549 A3 WO 2016042549A3 IL 2015050927 W IL2015050927 W IL 2015050927W WO 2016042549 A3 WO2016042549 A3 WO 2016042549A3
Authority
WO
WIPO (PCT)
Prior art keywords
selective light
light attenuation
imparting direction
attenuation
light rays
Prior art date
Application number
PCT/IL2015/050927
Other languages
French (fr)
Other versions
WO2016042549A2 (en
Inventor
Vladimir Dmitriev
Original Assignee
Carl Zeiss Sms Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Sms Ltd. filed Critical Carl Zeiss Sms Ltd.
Priority to CN201580049799.6A priority Critical patent/CN107111236B/en
Priority to KR1020177008786A priority patent/KR101931893B1/en
Publication of WO2016042549A2 publication Critical patent/WO2016042549A2/en
Publication of WO2016042549A3 publication Critical patent/WO2016042549A3/en
Priority to US15/453,337 priority patent/US10114294B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

Method, apparatus for imparting direction-selective light attenuation. A method for imparting direction-selective light attenuation to a photomask may include assigning different attenuation levels to light rays of different directions of incidence. The method may also include computing an array of shading elements to attenuate the light rays with the assigned different attenuation levels, depending on the direction of incidence of the light rays. The method may further include inscribing the array of shading elements within a substrate of the photomask.
PCT/IL2015/050927 2014-09-15 2015-09-10 Apparatus and method for imparting direction-selective light attenuation WO2016042549A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201580049799.6A CN107111236B (en) 2014-09-15 2015-09-10 Apparatus and method for conveying direction selective light attenuation
KR1020177008786A KR101931893B1 (en) 2014-09-15 2015-09-10 Apparatus and method for imparting direction-selective light attenuation
US15/453,337 US10114294B2 (en) 2014-09-15 2017-03-08 Apparatus and method for imparting direction-selective light attenuation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL234655 2014-09-15
IL234655A IL234655B (en) 2014-09-15 2014-09-15 Apparatus and method for imparting direction-selective light attenuation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/453,337 Continuation US10114294B2 (en) 2014-09-15 2017-03-08 Apparatus and method for imparting direction-selective light attenuation

Publications (2)

Publication Number Publication Date
WO2016042549A2 WO2016042549A2 (en) 2016-03-24
WO2016042549A3 true WO2016042549A3 (en) 2016-05-06

Family

ID=54337843

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2015/050927 WO2016042549A2 (en) 2014-09-15 2015-09-10 Apparatus and method for imparting direction-selective light attenuation

Country Status (5)

Country Link
US (1) US10114294B2 (en)
KR (1) KR101931893B1 (en)
CN (1) CN107111236B (en)
IL (1) IL234655B (en)
WO (1) WO2016042549A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017203246A1 (en) 2017-02-28 2018-08-30 Carl Zeiss Smt Gmbh Method for correcting a mirror for the wavelength range from 5 nm to 20 nm
JP2019164300A (en) 2018-03-20 2019-09-26 東芝メモリ株式会社 Substrate processing control apparatus, substrate processing program, and method of manufacturing photomask
DE102018218129B4 (en) * 2018-10-23 2023-10-12 Carl Zeiss Sms Ltd. Method for determining positions of a plurality of pixels to be incorporated into a substrate of a photolithographic mask

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060234139A1 (en) * 2005-04-13 2006-10-19 Kla-Tencor Technologies Corporation Systems and methods for modifying a reticle's optical properties
US20080130002A1 (en) * 2006-12-01 2008-06-05 Samsung Electronics Co., Ltd. Equipment and method for measuring transmittance of photomask under off axis illumination
US20100173230A1 (en) * 2009-01-07 2010-07-08 Samsung Electronics Co., Ltd. Photomask
US20110096979A1 (en) * 2009-10-26 2011-04-28 Myoungsoo Lee Method of correcting patterns for semiconductor device
US20150037714A1 (en) * 2013-07-24 2015-02-05 Semiconductor Manufacturing International (Shanghai) Corporation Photolithographic masks and fabrication method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902899A (en) 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
JPH08124833A (en) 1994-10-26 1996-05-17 Nikon Corp Charged particle beam transferring mask
US20030157415A1 (en) * 2000-02-16 2003-08-21 Ziger David H. Apparatus and method for compensating critical dimension deviations across photomask
US7241539B2 (en) * 2002-10-07 2007-07-10 Samsung Electronics Co., Ltd. Photomasks including shadowing elements therein and related methods and systems
KR100630692B1 (en) * 2004-07-22 2006-10-02 삼성전자주식회사 Photo-mask and method of compensating transmissivity of photo-mask
KR100604940B1 (en) * 2005-06-14 2006-07-28 삼성전자주식회사 Apparatus for measuring photo mask and method for measuring cd of photo mask using the same, apparatus and method of correcting the photo mask using the cd and method of manufacturing the photo mask
US8137870B2 (en) * 2005-06-14 2012-03-20 Samsung Electronics Co., Ltd. Method of manufacturing photomask

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060234139A1 (en) * 2005-04-13 2006-10-19 Kla-Tencor Technologies Corporation Systems and methods for modifying a reticle's optical properties
US20080130002A1 (en) * 2006-12-01 2008-06-05 Samsung Electronics Co., Ltd. Equipment and method for measuring transmittance of photomask under off axis illumination
US20100173230A1 (en) * 2009-01-07 2010-07-08 Samsung Electronics Co., Ltd. Photomask
US20110096979A1 (en) * 2009-10-26 2011-04-28 Myoungsoo Lee Method of correcting patterns for semiconductor device
US20150037714A1 (en) * 2013-07-24 2015-02-05 Semiconductor Manufacturing International (Shanghai) Corporation Photolithographic masks and fabrication method thereof

Also Published As

Publication number Publication date
KR101931893B1 (en) 2018-12-21
CN107111236B (en) 2020-02-21
WO2016042549A2 (en) 2016-03-24
CN107111236A (en) 2017-08-29
US10114294B2 (en) 2018-10-30
KR20170048509A (en) 2017-05-08
US20170176866A1 (en) 2017-06-22
IL234655B (en) 2018-10-31

Similar Documents

Publication Publication Date Title
EP3940631A4 (en) Learning device, deduction device, data generation device, learning method, and learning program
EP3429183A4 (en) Camera module, and photosensitive component thereof and manufacturing method therefor
EP3836142A4 (en) Abnormality detection device, probability distribution learning device, self-encoder learning device, data conversion device, and program
EP3362852A4 (en) Array substrate and semiconductor device containing the same, and method for fabricating the same
EP3679524A4 (en) Execution method, execution device, learning method, learning device, and program for deep neural network
EP3242341A4 (en) Array substrate and manufacturing method therefor, display panel and display device
EP3106920A4 (en) Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, mask blank provided with active light sensitive or radiation sensitive film, photomask, pattern forming method, method for manufacturing electronic device, and electronic device
EP3427212A4 (en) Systems, methods, and devices for secure generation and processing of data sets representing pre-funded payments
EP3526643A4 (en) Array substrate and repairing method thereof
FR3032064B1 (en) OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP3617763A4 (en) Optical module structure and manufacturing method therefor
EP3438730A4 (en) Pulse light generation device, light irradiation device, optical processing device, optical response measurement device, microscope device, and pulse light generation method
EP3842217A4 (en) Information processing device, information processing method, information processing program, layered-molding device, and process window generation method
FR3023064B1 (en) PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP3484139A4 (en) Photosensitive component, and camera module and manufacturing method therefor
GB2543437A (en) System and method for increasing the bit depth of images
WO2015001058A3 (en) Method and device for de-blending seismic data using source signature
WO2016042549A3 (en) Apparatus and method for imparting direction-selective light attenuation
EP3281228A4 (en) Oled array substrate, display apparatus containing the same, and method for forming the same
EP3296774A4 (en) Light condensing device, photovoltaic device, light condensing sheet, photovoltaic sheet, and method for manufacturing light condensing device or photovoltaic device
EP3882669A4 (en) Radiation detection module, radiation detector, and radiation detection module production method
EP3819916A4 (en) Nuclear reactor dismantlement system
EP3846070A4 (en) Generation method, generation program, and information processing device
EP3644120A4 (en) Photomask structure and method for manufacturing array substrate
EP3602459A4 (en) Computer systems, computer-implemented methods and software for processing payouts

Legal Events

Date Code Title Description
REEP Request for entry into the european phase

Ref document number: 2015782076

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2015782076

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15782076

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 20177008786

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 15782076

Country of ref document: EP

Kind code of ref document: A2