WO2016026481A1 - Guide d'ondes hybride en verre de chalcogénure/silicium et résonateurs de conversion de longueurs d'ondes - Google Patents

Guide d'ondes hybride en verre de chalcogénure/silicium et résonateurs de conversion de longueurs d'ondes Download PDF

Info

Publication number
WO2016026481A1
WO2016026481A1 PCT/DE2015/000427 DE2015000427W WO2016026481A1 WO 2016026481 A1 WO2016026481 A1 WO 2016026481A1 DE 2015000427 W DE2015000427 W DE 2015000427W WO 2016026481 A1 WO2016026481 A1 WO 2016026481A1
Authority
WO
WIPO (PCT)
Prior art keywords
chalcogenide glass
optical structure
structure according
waveguide
integrated
Prior art date
Application number
PCT/DE2015/000427
Other languages
German (de)
English (en)
Inventor
Peter Nolte
Jörg SCHILLING
Nicolai GRANZOW
Markus Schmidt
Original Assignee
Martin-Luther-Universität Halle-Wittenberg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Martin-Luther-Universität Halle-Wittenberg filed Critical Martin-Luther-Universität Halle-Wittenberg
Publication of WO2016026481A1 publication Critical patent/WO2016026481A1/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/365—Non-linear optics in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3536—Four-wave interaction
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3555—Glasses
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/105—Materials and properties semiconductor single crystal Si
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/15—Function characteristic involving resonance effects, e.g. resonantly enhanced interaction

Definitions

  • SOI silicon insulator
  • wavelength division multiplexing method wavelength dispersive multiplexing
  • Each carrier wavelength corresponds to an information channel, via which the information is transmitted coded as light pulses.
  • the generation of many sharply limited carrier frequencies is necessary, which can propagate through the silicon waveguides.
  • an important objective is the monolithic union of light source, light modulation, light pipe, and light detection on a substrate. As a light source, because of the required high light intensity usually only one laser in question.
  • nonlinear optical processes such as difference or sum frequency generation or four-wave mixing can be used.
  • the intense wavelength emitted by the laser hereinafter referred to as the pump wavelength
  • a nonlinear optical material having second- or third-order susceptibility ⁇ (2) , ⁇ (3)
  • frequency combs Of particular interest for the generation of different spectrally closely lying wavelengths (so-called "frequency combs") is the four-wave mixing or simplifies in particular the degenerate four-wave mixing.
  • slotted waveguides and ring resonators are known, which, however, are aimed at the majority of the construction of optical modulators, wherein the refractive index of a nonlinear optical material is varied due to high intensity or an applied voltage.
  • organic polymers are used (US 8,340,486 Bl; US2007 / 0035800 AI).
  • the invention was based on the problem to increase the efficiency of degenerate four-wave mixing in SOI waveguides and by exploiting a high ⁇ (3) more
  • the invention should make it possible to transmit a signal from one wavelength to another.
  • the problem was solved according to the invention by means of a combination of silicon (Si) waveguides, which are located on a silicon oxide layer (SiO 2), with chalcogenide glasses (eg As 2 S 3 ) which have a high third order optical nonlinearity ( ⁇ (3) ) , Using the established silicon technology, the Si waveguides are made to allow the light pipe. The optical non-linearity of the chalcogenide glass is used to generate new wavelengths of light via the nonlinear optical four-wave mixing process.
  • Si silicon
  • SiO 2 silicon oxide layer
  • chalcogenide glasses eg As 2 S 3
  • ⁇ (3) third order optical nonlinearity
  • the technical solution consists of a ring or racetrack resonator, which is constructed of a slotted waveguide and the slot of a
  • FOM Re [% (3) ] / lm [x (3) ]
  • S 3 is one such material.
  • the slit waveguide consists of two separated narrower Si strips which have a spacing of a few 10 to a few 100 nm ("the slit”.)
  • a straight classic Si strip waveguide extends in the immediate vicinity of the resonator slotted waveguide on one side of the resonator.
  • the slotted waveguide resonator and the bus waveguide in the region of the resonator are completely covered with the chalcogenide glass (eg As ⁇ ).
  • the chalcogenide glass completely fills the slit of the slit waveguide (Embodiment 1)
  • the degenerate four-wave mixing which is particularly efficient in the slit waveguides and resonators is used an intense pump wavelength and a (generally) black Cheren signal wavelength, a third, different from the first two Idlerwellengue.
  • Light frequencies spectrally closely adjacent e.g. occur in the near infrared.
  • Bus waveguide coupled.
  • the waves reach the area of the ring or
  • Racetrack resonators can inject pump and signal wave via the evanescent portions of the mode in the adjacent resonator.
  • the electric fields of the TE polarized modes concentrate in the slot ( Figure 2). This effect is particularly strong when the refractive index of the infiltrated material is low.
  • This field concentration in the slot which is infiltrated with the chalcogenide glass (eg As 2 S 3 ), leads to increased nonlinear optical processes and efficient degenerate four-wave mixing, from which the idler frequency already considered as new Light frequency is generated. Due to the closed ring structure, there is also an amplification of the light fields due to the resonator effect. For light with certain frequencies (resonance frequencies), there is a constructive interference of the rotating waveguide mode, so that their field increases greatly.
  • the structure according to the invention has the following advantages in comparison with the previously known structures and methods for optical information processing: 1) The use of a slotted waveguide results in field concentration in the slit where the nonlinear optically active material is placed, which supports efficient four-wave mixing.
  • the chalcogenide glasses have high x (3) values and are therefore suitable materials for four-shaft mixing processes. In addition, unlike organic polymers, they are still relatively stable even at higher light intensities. 5)
  • the chalcogenide glass As 2 S 3 is optimal for functioning as a nonlinear optical material in this structure and in the near-infrared spectral range around 1500 nm. The linear absorption of As 2 S 3 starts at ⁇ ⁇ 700 nm. This means that As 2 S3 has no two-photon absorption for ⁇ > 1400 nm. So it has to Si in this
  • the silicon waveguides including the ring resonator or racetrack resonator, are fabricated from silicon-on-insulator (SOI) substrate by making the slit waveguide forming the ring or racetrack resonator and the adjacent one
  • SOI silicon-on-insulator
  • the structure is tempered after the chalcogenide glass deposition under an inert gas atmosphere at temperatures between 200 ° C and 400 ° C.
  • an argon atmosphere with a pressure of 50 bar and a process temperature of about 300 ° C has proven.
  • the chalcogenide glass which is flowable at a higher temperature is pressed into the slot at this high pressure.
  • the chalcogenide glass remains in the slot and the fully infiltrated structure is completed.
  • This process corresponds to an adaptation of the injection molding process to chalcogenide glasses and nanostructured geometries and can therefore be referred to as nano-injection molding ("nano-injection molding").
  • Slotted waveguide racetrack resonators could be detected experimentally.
  • 2 continuous wave laser sources were tuned to the resonance wavelengths 1549.7 nm and 1550.9 nm and fed via the bus waveguide into the resonator.
  • the spectrum of Fig. 4 was detected, containing 2 newly formed idler wavelengths at 1548.5 nm and at 1552.1 nm. Since the two injected frequencies have nearly the same intensity, they can interchange the roles of pump wavelength.
  • the pump wavelength is 1549.7 nm and the signal wavelength is assumed to be 1550.9 nm
  • the idler wavelength at 1548.5 nm arises
  • Idler wavelength at 1552.1 nm arises when the pump wavelength is assumed to be 1550.9 nm and the signal wavelength at 1549.7 nm. Since both processes are possible, both idler wavelengths are created. The so far illustrated operation corresponds to a parametric amplifier. In addition to the newly formed Idlerwelleneedin the signal wavelength is further amplified.
  • FIG. 1 is a diagrammatic representation of FIG. 1:
  • Ring or racetrack resonator of As 2 S 3 infiltrated and covered Si slotted waveguide adjacent to the straight Si strip waveguide.
  • the left-hand detail shows the waveguide profile (cross section) of the ring or racetrack resonator.
  • the right-hand detail drawing shows the waveguide profile in the coupling region between solid straight Si strip waveguide and slit waveguide of the ring or racetrack resonator.
  • FIG. 2 is a diagrammatic representation of FIG. 1
  • FIG. 3 a
  • FSR free spectral ranks
  • FIG. 3 b
  • FIG. 4 is a diagrammatic representation of FIG. 4
  • the two idler wavelengths at 1548.5 nm and 1552.1 nm respectively result from the fact that once the intense wavelength at 1549.7 nm acts as pump and once as signal wavelength, while the wavelength at 1550.9 nm then either the signal or pump wavelength represents.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'objectif de l'invention est d'augmenter l'efficacité du mélange à quatre ondes dégénérées dans des guides d'ondes SOI A cette fin, des guides d'ondes fendus en silicium (Si) situés sur une couche d'oxyde de silicium (Si02) sont infiltrés et recouverts par des verres de chalcogénure (As2S3 par exemple). Afin d'augmenter leur efficacité, ces guides d'ondes se présentent sous forme de résonateurs en forme d'anneau ou de piste de course. Les verres de chalcogénure ont été sélectionnés en fonction de leur non linéarité optique élevée de troisième ordre (X (3)).
PCT/DE2015/000427 2014-08-18 2015-08-17 Guide d'ondes hybride en verre de chalcogénure/silicium et résonateurs de conversion de longueurs d'ondes WO2016026481A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014012057 2014-08-18
DE102014012057.0 2014-08-18

Publications (1)

Publication Number Publication Date
WO2016026481A1 true WO2016026481A1 (fr) 2016-02-25

Family

ID=54365914

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2015/000427 WO2016026481A1 (fr) 2014-08-18 2015-08-17 Guide d'ondes hybride en verre de chalcogénure/silicium et résonateurs de conversion de longueurs d'ondes

Country Status (1)

Country Link
WO (1) WO2016026481A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019118406A1 (fr) * 2017-12-11 2019-06-20 Schott Corporation Verres athermiques et systèmes athermiques pour optique infrarouge

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070035800A1 (en) 2005-08-12 2007-02-15 California Institute Of Technology Ultrafast optical modulator
US8340486B1 (en) 2009-06-09 2012-12-25 University Of Washington Effective χ2 on the basis of electric biasing of χ3 materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070035800A1 (en) 2005-08-12 2007-02-15 California Institute Of Technology Ultrafast optical modulator
US8340486B1 (en) 2009-06-09 2012-12-25 University Of Washington Effective χ2 on the basis of electric biasing of χ3 materials

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
AMY C. TURNER ET AL: "Ultra-low power parametric frequency conversion in a silicon microring resonator", OPTICS EXPRESS, vol. 16, no. 7, 31 March 2008 (2008-03-31), pages 4881, XP055242919, ISSN: 2161-2072, DOI: 10.1364/OE.16.004881 *
LIN ZHANG ET AL: "Flat and low dispersion in highly nonlinear slot waveguides", OPTICS EXPRESS, vol. 18, no. 12, 7 June 2010 (2010-06-07), pages 13187, XP055243027, ISSN: 2161-2072, DOI: 10.1364/OE.18.013187 *
NOLTE PETER W ET AL: "Phase matching of degenerate four wave mixing in silicon-chalcogenide slot waveguides", 10TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, IEEE, 28 August 2013 (2013-08-28), pages 122 - 123, XP032513434, ISSN: 1949-2081, [retrieved on 20131022], DOI: 10.1109/GROUP4.2013.6644459 *
SCHILLING JÖRG ET AL: "Slotted nanobeam microcavities enabling hybrid photonic devices", ACTIVE PHOTONIC MATERIALS IV, SPIE, 1000 20TH ST. BELLINGHAM WA 98225-6705 USA, vol. 8095, no. 1, 8 September 2011 (2011-09-08), pages 1 - 7, XP060020290, DOI: 10.1117/12.893683 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019118406A1 (fr) * 2017-12-11 2019-06-20 Schott Corporation Verres athermiques et systèmes athermiques pour optique infrarouge

Similar Documents

Publication Publication Date Title
Vermeulen et al. Graphene’s nonlinear-optical physics revealed through exponentially growing self-phase modulation
Yu et al. Spontaneous pulse formation in edgeless photonic crystal resonators
Tikan et al. Emergent nonlinear phenomena in a driven dissipative photonic dimer
Gu et al. Regenerative oscillation and four-wave mixing in graphene optoelectronics
Merklein et al. Enhancing and inhibiting stimulated Brillouin scattering in photonic integrated circuits
Engin et al. Photon pair generation in a silicon micro-ring resonator with reverse bias enhancement
Carletti et al. Nonlinear optical response of low loss silicon germanium waveguides in the mid-infrared
Ma et al. MXene saturable absorber enabled hybrid mode-locking technology: a new routine of advancing femtosecond fiber lasers performance
Moss et al. New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics
Li et al. Ultrafast all-optical graphene modulator
Kuyken et al. Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides
Razzari et al. CMOS-compatible integrated optical hyper-parametric oscillator
Tsang et al. Nonlinear optical properties of silicon waveguides
Farries et al. Second-harmonic generation in an optical fibre by self-written χ (2) grating
Peacock et al. Semiconductor optical fibres: progress and opportunities
Li et al. Invited Article: Mode-locked waveguide lasers modulated by rhenium diselenide as a new saturable absorber
Guo et al. Broadly tunable plasmons in doped oxide nanoparticles for ultrafast and broadband mid-infrared all-optical switching
Liu et al. Gain-induced topological response via tailored long-range interactions
US9915852B2 (en) Systems for nonlinear optical wave-mixing
Wong et al. Broadband, integrated, micron-scale, all-optical Si3N4/VO2 modulators with pJ switching energy
Chen et al. Adapted poling to break the nonlinear efficiency limit in nanophotonic lithium niobate waveguides
Chen et al. Supercontinuum generation in high order waveguide mode with near-visible pumping using aluminum nitride waveguides
Ma et al. Graphdiyne-decorated microfiber based soliton and noise-like pulse generation
Vermeulen Perspectives on nonlinear optics of graphene: Opportunities and challenges
Savitsky et al. Single-cycle, multigigawatt carrier–envelope-phase-tailored near-to-mid-infrared driver for strong-field nonlinear optics

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15788318

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 15788318

Country of ref document: EP

Kind code of ref document: A1