WO2016020515A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2016020515A1
WO2016020515A1 PCT/EP2015/068239 EP2015068239W WO2016020515A1 WO 2016020515 A1 WO2016020515 A1 WO 2016020515A1 EP 2015068239 W EP2015068239 W EP 2015068239W WO 2016020515 A1 WO2016020515 A1 WO 2016020515A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
layer
organic light
generation unit
charge generation
Prior art date
Application number
PCT/EP2015/068239
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English (en)
Inventor
Florian LINDLA
Manuel BOESING
Sören HARTMANN
Original Assignee
Oledworks Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oledworks Gmbh filed Critical Oledworks Gmbh
Publication of WO2016020515A1 publication Critical patent/WO2016020515A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes

Definitions

  • the invention relates to a light emitting device and to a manufacturing method and a manufacturing apparatus for manufacturing the light emitting device.
  • the invention relates further to a computer program for controlling the manufacturing apparatus.
  • US 2003/0189401 Al discloses a light emitting device comprising a stack of several organic light emitting diodes which are arranged vertically in series, wherein between two adjacent organic light emitting diodes a charge generation unit (CGU) is arranged.
  • CGU charge generation unit
  • This light emitting device has the drawback that at high temperatures the quality of the light emitting device decreases, i.e., for instance, that at high temperatures a drive voltage increase versus storage time can be present.
  • a light emitting device comprising a first organic light emitting diode, a charge generation unit and a second organic light emitting diode arranged in a stack, wherein the charge generation unit is arranged between the first and second organic light emitting diodes and comprises an intrinsic layer.
  • the intrinsic layer of the charge generation unit reduces a diffusion of atoms into the first organic light emitting diode and/or the second organic light emitting diode, thereby reducing the likelihood of degrading the respective organic light emitting diode due to the diffused atoms.
  • This can increase the temperature stability of the light emitting device.
  • it can reduce, especially eliminate, a drive voltage increase versus operation and/or storage time, which may be present in known stacked organic light emitting devices at higher temperatures being larger than, for instance, 50 degrees Celsius.
  • the drive voltage increase versus operation and/or storage time may be eliminated up to a temperature of 105 degrees Celsius.
  • the intrinsic layer can be an organic layer like an organic semiconductor layer. It can be, for instance, an electron conductor and/or it can comprise emitting molecules.
  • the intrinsic layer is a Tris[2-phenylpyridinato- C",N]iridium(III) layer, i.e. an Ir(ppy)3 layer.
  • the intrinsic layer is preferentially adapted to allow electrons to tunnel through the intrinsic layer. Since organic materials generally have highest occupied molecular orbital/lowest unoccupied molecular orbital (HOMO/LUMO) gaps, which are relatively small in comparison to the band gap of inorganic materials, using an organic intrinsic layer may lead to a minimized drive voltage loss at the charge generation unit.
  • HOMO/LUMO unoccupied molecular orbital
  • the charge generation unit is a unit which is utilized to stack two or more organic light emitting diodes vertically in series.
  • the charge generation unit separates charge carriers followed by a recombination in the adjacent organic light emission layers.
  • the charge generation unit may utilize different mechanisms to separate charge carriers like splitting in an intense intrinsic electric field, tunneling of charges, et cetera.
  • a charge generation unit may also be referred to as charge generation layer.
  • a charge generation unit comprises a layer stack which is used for the charge generation.
  • the charge generation unit preferentially comprises a lithium containing layer, wherein the intrinsic layer is preferentially adapted to not allow lithium atoms to penetrate the intrinsic layer.
  • the lithium containing layer is a lithium layer or a lithium fluoride layer or a lithium doped layer.
  • the charge generation unit comprises an aluminum layer.
  • the aluminum layer is used together with a lithium fluoride layer, in order to allow the lithium fluoride to react with aluminum, thereby releasing metallic lithium.
  • the metallic lithium can be used to n-dope an adjacent layer of the light emitting device like an adjacent organic electron transport layer, which in turn can improve the light emitting device and lower the drive voltage loss at the charge generation unit.
  • the charge generation unit comprises an electron accepting layer.
  • the electron accepting layer is preferentially an organic layer.
  • the electron accepting layer may be an electron-conducting organic layer.
  • the organic electron accepting layer can be, for instance, a 1, 4, 5, 8, 9, 11-hexaazatriphenylene-hexacarbonitrile layer, i.e. a HAT-CN layer.
  • the electron accepting layer has preferentially a thickness within a range of 1 to 20 nm. Using an organic layer as electron accepting layer has the advantage that the organic layer can relatively easily be deposited, i.e. the deposition process itself can be relatively easy, and the adhesion to a beforehand deposited organic layer can be better.
  • the organic layer is generally not brittle such that it can easily be used in flexible applications.
  • the electron accepting layer can also be an inorganic layer, wherein in this case the thickness of the electron accepting layer may be within a range of 0.1 to 10 nm.
  • the electron accepting layer may comprise a transition metal oxide.
  • the electron accepting layer can be a transition metal oxide layer like a W0 3 layer or a M0O 3 layer.
  • the intrinsic layer has preferentially a thickness within a range of 1 to 10 nm.
  • the lithium containing layer has preferentially a thickness within a range of 0.1 to 10 nm and further preferred within a range of 0.1 to 1.0 nm.
  • the thickness of the layer is preferentially within a range of 0.1 to 1.0 nm, and, if the lithium containing layer is a lithium doped layer, the thickness of the layer is preferentially within a range of 0.1 to 10 nm.
  • the aluminum layer has preferentially a thickness within a range of 0.1 to 1.0 nm and, as already mentioned above, the electron accepting layer has preferentially a thickness within a range of 1 to 20 nm. In a preferred embodiment the electron accepting layer has a thickness of 8 nm. It has been found that, if these thicknesses are used, the drive voltage can be relatively low, the light output can be relatively high and there may be a very low or no drive voltage increase versus operating and/or storage time at high temperatures being as high as, for instance, 105 degrees Celsius. Using layers having these thicknesses lead therefore to a light emitting device having an improved performance.
  • the first organic light emitting diode, the charge generation unit and the second organic light emitting diode are arranged between an anode and a cathode of the light emitting device, wherein in an embodiment the lithium containing layer, the aluminum layer, the intrinsic layer and the electron accepting layer are successively arranged in this order when viewed in the direction from the anode to the cathode.
  • the light emitting device preferentially further comprises a hole-conducting layer, wherein the lithium containing layer, the aluminum layer, the intrinsic layer, the electron accepting layer and the hole conducting layer are successively arranged in this order when viewed in the direction from the anode to the cathode of the light emitting device
  • the electron accepting layer is an organic electron accepting layer, wherein the LUMO level of the electron accepting layer and the HOMO level of the hole-conducting layer are such that electrons are extractable from the HOMO into the LUMO.
  • the electron accepting layer can be a HAT-CN layer and the hole- conducting layer can be a (4, 4'-bis(N-phenyl-l-naphthylamino)biphenyl) layer, i.e. an NPB layer.
  • the electron accepting layer is an inorganic electron accepting layer, the conduction band of the electron accepting layer is preferentially deep enough for extracting electrons from the HOMO of the following hole-conducting layer. For instance, a combination of M0O 3 followed by NPB can be used.
  • a manufacturing method for manufacturing a light emitting device as defined in claim 1 comprises:
  • a charge generation unit which comprises an intrinsic layer, on the first organic light emitting diode
  • a manufacturing apparatus for manufacturing a light emitting device as defined in claim 1 wherein the manufacturing apparatus comprises:
  • a charge generation unit providing unit for providing a charge generation unit, which comprises an intrinsic layer, on the first organic light emitting diode,
  • a second organic light emitting diode providing unit for providing a second organic light emitting diode on the charge generation unit.
  • a computer program for controlling a manufacturing apparatus as defined in claim 14 comprises program code means for causing the manufacturing apparatus to carry out the steps of the manufacturing method as defined in claim 13, when the computer program is run on a computer controlling the manufacturing apparatus.
  • the light emitting device of claim 1 the manufacturing method of claim 13, the manufacturing apparatus of claim 14, and the computer program of claim 15 have similar and/or identical preferred embodiments, in particular, as defined in the dependent claims. It shall be understood that a preferred embodiment of the present invention can also be any combination of the dependent claims or above embodiments with the respective independent claim.
  • Fig. 1 shows schematically and exemplarily an embodiment of a light emitting device comprising a first organic light emitting diode, a charge generation unit and a second organic light emitting diode arranged in a stack,
  • Fig. 2 shows schematically and exemplarily an embodiment of a manufacturing apparatus for manufacturing the light emitting device
  • Fig. 3 shows a flowchart exemplarily illustrating an embodiment of a manufacturing method for manufacturing the light emitting device
  • Fig. 4 shows a voltage increase versus storage time at a high temperature.
  • Fig. 1 shows schematically and exemplarily an embodiment of a light emitting device.
  • the light emitting device 1 comprises a first organic light emitting diode 6, a charge generation unit 10 and a second organic light emitting diode 14 arranged in a stack, wherein the stack is arranged between an anode 2 and a cathode 15 and wherein the charge generation unit 10 is arranged between the first and second organic light emitting diodes 6, 14.
  • the anode 2 and the cathode 15 are electrically connected to a voltage source 16 via electrical connections 17.
  • the first organic light emitting diode 6 comprises a hole transport layer 3, an organic light emitting layer 4 and an electrode transport layer 5.
  • the second organic light emitting diode 14 comprises a hole transport layer 12, an organic light emitting layer 13 and an electrode transport layer 18.
  • the organic light emitting layers can comprise a light emitting material or a mixture of different light emitting materials in one organic layer or in several organic sublayers.
  • fluorescent or phosphorescent light emitting materials like Ir(ppy)3 or Ir(mdbq)2(acac) may be doped into hole and/or electron conducting host materials having a triplet energy like Tris(4-carbazoyl-9-ylphenyl)amine (TCTA), 4,4'-Bis(N-carbazolyl)- l, - biphenyl (CBP) or l,3,5-tris(N-phenylbenzimidizol-2-yl)benzene (TPBi).
  • TCTA Tris(4-carbazoyl-9-ylphenyl)amine
  • CBP biphenyl
  • TPBi l,3,5-tris(N-phenylbenzimidizol-2-yl)benzene
  • the hole transport layers preferentially have a relatively high hole conductivity and a relatively low ionization potential in comparison to, for instance, a hole conducting host material which may be used in the organic light emitting layers, in order to allow for an easy hole injection from the anode.
  • the hole transport layers comprise, for instance, NPB or 4,4'-Cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC).
  • the electron transport layers preferentially have a relatively high electron conductivity and a relatively large electron affinity, in order to allow electrons to be easily injected from the cathode.
  • the electron transport layers may comprise, for instance,
  • the charge generation unit 10 comprises a lithium containing layer 7, an aluminum layer 8, an intrinsic layer 9 and an electron accepting layer 11, wherein these layers are successively arranged in this order when viewed in the direction from the anode 2 to the cathode 15 of the light emitting device 1.
  • the lithium containing layer 7 is a lithium fluoride layer. It has a thickness within a range of 0.1 to 1.0 nm, wherein the aluminum layer has a thickness within a range of 0.1 to 1.0 nm.
  • the lithium containing layer can also be, for instance, a pure lithium layer or a lithium doped layer. If the lithium containing layer is a pure lithium layer or a lithium doped layer, the charge generation unit 10 may not comprise the aluminum layer 8. If in another embodiment the lithium containing layer is a lithium doped layer, lithium may be doped in an electron conducting host material like TPBi or Alq3 which may also capture lithium and prevent diffusion.
  • the electron accepting layer 11 is an organic layer. In particular, it is an electron-conducting organic layer. It can be, for instance, a HAT-CN layer. It has a thickness within the range of 1 to 20 nm. In another embodiment the electron accepting layer 11 may be an inorganic layer, wherein in this case the thickness of the electron accepting layer is preferentially within a range of 0.1 to 10 nm.
  • the electron accepting layer may comprise a transition metal oxide. For instance, it may be a W0 3 layer or a M0O 3 layer.
  • the hole transport layer 12 is preferentially a NPB layer or a layer with a low ionization potential.
  • the electron accepting layer 11 is an inorganic layer, the electron accepting layer 11 and the hole transport layer 12 are chosen such that the conduction band of the electron accepting layer 11 is deep enough for extracting electrons from the HOMO of the hole transport layer 12. For instance, a combination of a M0O 3 layer as electron accepting layer and an NPB layer as hole transport layer can be used.
  • the intrinsic layer 9 has preferentially a thickness within a range of 1 to 10 nm.
  • the intrinsic layer 9 is an organic layer, especially an organic semiconductor layer. It can be, for instance, an electron conductor and/or comprise light emitting molecules.
  • the intrinsic layer 9 can be an Ir(ppy)3 layer.
  • the intrinsic layer 9 is adapted such that electrons can tunnel through the intrinsic layer 9, wherein lithium atoms cannot penetrate the intrinsic layer 9.
  • the lithium containing layer especially the lithium fluoride layer, has a thickness of 0.2 nm
  • the aluminum layer has a thickness of 0.5 nm
  • the intrinsic layer which may also be regarded as being an intrinsic interlayer, has a thickness of 5.0 nm.
  • the manufacturing apparatus 20 comprises a first organic light emitting diode providing unit 21 for providing a first organic light emitting diode in step 101.
  • the first organic light emitting diode providing unit 21 is adapted to apply the different layers of the first organic light emitting diode 6 onto a substrate already provided with an anode layer.
  • the first organic light emitting diode providing unit 21 can be adapted to apply an electron transport layer, an organic light emitting layer and a hole transport layer on the substrate with the anode layer.
  • the resulting substrate with the anode and the first organic light emitting diode is denoted by reference number 22.
  • the apparatus 20 further comprises a charge generation unit providing unit 23, which in step 102 provides the charge generation unit with the intrinsic layer on the first organic light emitting diode.
  • the charge generation unit providing unit 23 is adapted to apply the lithium containing layer, the aluminum layer, the intrinsic layer and the electron accepting layer in this order on the first organic light emitting diode.
  • the resulting intermediate product with the substrate, the anode, the first organic light emitting diode and the charge generation unit is denoted by reference number 24 in Fig. 2.
  • the apparatus 20 further comprises a second organic light emitting diode providing unit 25 for providing a second organic light emitting diode on the charge generation unit.
  • step 103 the second organic light emitting diode providing unit 25 applies a hole transport layer, an organic light emission layer and an electrode transport layer on the charge generation unit in this order.
  • the resulting product is denoted by reference number 26 in Fig. 2.
  • a cathode layer may be provided on the electron transport layer of the second organic light emitting diode.
  • the cathode layer may be applied by the second organic light emitting diode providing unit 25.
  • step 104 the anode and the cathode may be electrically connected to a voltage source, in order to apply voltage to the first and second organic light emitting diodes.
  • Fig. 2 shows three different units of the manufacturing apparatus 20, the manufacturing apparatus 20 may of course comprise more or less units which generate the different layers.
  • the first organic light emitting diode providing unit 21 and the second organic light emitting diode providing unit 25 can be integrated in a single light emitting diode providing unit.
  • the light emitting device comprises the intrinsic layer, which may also be regarded as being an intrinsic interlayer, between the electron accepting layer and an electron transport layer.
  • a lithium containing layer especially a lithium fluoride layer, and an aluminum layer are preferentially arranged between the electron accepting layer and the electron transport layer.
  • the thicknesses of the lithium containing layer, the aluminum layer and the intrinsic interlayer are preferentially chosen very carefully to achieve a low drive voltage, i.e. ideally a drive voltage being twice the one of a non-stacked device, a high light output, i.e.
  • the charge generation unit preferentially connects the first and second organic light emitting diodes in series.
  • the different layers, especially the organic layers as well as the lithium fluoride layer and the aluminum layer, are preferentially evaporated under high vacuum conditions ( ⁇ 10 "6 mbar), while the layer thicknesses are controlled by quartz monitors.
  • the intrinsic interlayer can be used to tune the charge carrier balance and thereby the lifetime, color coordinates and efficiency of the light emitting diodes.
  • the intrinsic interlayer especially in combination with the lithium fluoride and aluminum layers or in combination with simply a lithium layer can lead to an improved drive voltage stability versus lifetime as illustrated in Fig. 4.
  • Fig. 4 schematically and exemplarily illustrates a voltage increase AU in volt V depending on the storage time t in hours h at a high temperature of 105 degrees Celsius.
  • a first graph 50 illustrates the voltage increase for a light emitting device having a known charge generation unit in between two organic light emitting diodes and a second graph 51 shows the voltage increase for the light emitting device described above with reference to Fig. 1.
  • the light emitting device described above with reference to Fig. 1 does not show any voltage increase versus storage time, whereas the light emitting device with the known charge generation unit shows a strong drive voltage increase versus storage time.
  • the light emitting device can be used in a high-temperature environment like automotive applications, for instance, rear light applications, indicator light applications, et cetera. Moreover, the light emitting device may be used in general lighting utilizing high power densities.
  • a pure electron accepting layer is arranged, in other embodiments instead of the pure electron accepting layer a doped layer can be arranged next to the intrinsic interlayer.
  • a pure lithium layer or lithium doped layers can be used instead of using a lithium fluoride layer and an aluminum layer. It is also possible that instead of the lithium fluoride layer and the aluminum layer other metal layers or even organic layers are used, wherein the organic layers are preferentially lithium containing and releasing organic materials.
  • the light emitting device comprises two organic light emitting diodes with an intermediate charge generation unit only, in other embodiments the light emitting device can comprise more than two organic light emitting diodes, wherein preferentially between adjacent organic light emitting diodes a charge generation unit having an intrinsic layer and preferentially also a lithium containing layer is arranged.
  • the light emitting device comprises five organic light emitting diodes
  • a first charge generation unit may be arranged
  • a second charge generation unit may be arranged
  • between the third organic light emitting diode and a fourth organic light emitting diode a third charge generation unit may be arranged
  • between the fourth organic light emitting diode and a fifth organic light emitting diode a fourth charge generation unit may be arranged.
  • a charge generation unit is arranged on top of the first organic light emitting diode and/or below the last organic light emitting diode.
  • the charge generation unit comprises certain layers in addition to the intrinsic layer
  • the charge generation unit can comprise other layers in addition to the intrinsic layer.
  • the charge generation unit can comprise a layer comprising at least one material selected from a list consisting of sodium (Na), potassium (K), rubidium (Rb), caesium (Cs), beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr) and barium (Ba).
  • the charge generation unit may comprise a layer comprising a single one of these materials or a mixture of some of these materials.
  • the charge generation unit may comprise at least two layers comprising different materials of this list, i.e., for instance, a first layer comprising a first material from this list, a second layer comprising a second material from this list, et cetera.
  • a single unit or device may fulfill the functions of several items recited in the claims.
  • the mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
  • control of the manufacturing apparatus in accordance with the manufacturing method can be implemented as program code means of a computer program and/or as dedicated hardware.
  • a computer program may be stored/distributed on a suitable medium, such as an optical storage medium or a solid-state medium, supplied together with or as part of other hardware, but may also be distributed in other forms, such as via the Internet or other wired or wireless telecommunication systems.
  • a suitable medium such as an optical storage medium or a solid-state medium, supplied together with or as part of other hardware, but may also be distributed in other forms, such as via the Internet or other wired or wireless telecommunication systems.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un dispositif électroluminescent comprenant une première diode électroluminescente organique (6), une seconde diode électroluminescente organique (14) et une unité de génération de charge (10) agencés en un empilement, l'unité de génération de charge (10) étant agencée entre les première et secondes diodes électroluminescentes organique (6, 14) et comprenant une couche intrinsèque (9). La couche intrinsèque de l'unité de génération de charge réduit une diffusion d'atomes dans la première diode électroluminescente organique et/ou la seconde diode électroluminescente organique, réduisant ainsi la probabilité de dégradation de la diode électroluminescente organique respective due aux atomes diffusés. Ceci peut augmenter la stabilité en température du dispositif électroluminescent. En particulier, il peut réduire, notamment éliminer, une augmentation de tension d'attaque vis-à-vis du temps de fonctionnement et/ou de stockage, qui peut être présent dans des dispositifs électroluminescents organiques empilés connus à des températures plus élevées.
PCT/EP2015/068239 2014-08-07 2015-08-07 Dispositif électroluminescent WO2016020515A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14180153.0 2014-08-07
EP14180153 2014-08-07

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WO2016020515A1 true WO2016020515A1 (fr) 2016-02-11

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Citations (6)

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US20070278937A1 (en) * 2006-06-05 2007-12-06 Stephen Forrest Organic light-emitting device with a phosphor-sensitized fluorescent emission layer
US20120098011A1 (en) * 2010-10-22 2012-04-26 Hongseok Choi Organic light emitting diode device
US20120161111A1 (en) * 2010-12-23 2012-06-28 Au Optronics Corporation White organic light electroluminescence device
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DE112012001477T5 (de) * 2011-03-31 2013-12-24 Panasonic Corporation Organisches Elektrolumineszenzelement

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Publication number Priority date Publication date Assignee Title
US20070278937A1 (en) * 2006-06-05 2007-12-06 Stephen Forrest Organic light-emitting device with a phosphor-sensitized fluorescent emission layer
US20120098011A1 (en) * 2010-10-22 2012-04-26 Hongseok Choi Organic light emitting diode device
US20120161111A1 (en) * 2010-12-23 2012-06-28 Au Optronics Corporation White organic light electroluminescence device
US20120241794A1 (en) * 2011-03-23 2012-09-27 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Device and Lighting Device
DE112012001477T5 (de) * 2011-03-31 2013-12-24 Panasonic Corporation Organisches Elektrolumineszenzelement
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Title
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