WO2016014345A3 - Dispositifs électroniques à deux bornes et leurs procédés de fabrication - Google Patents

Dispositifs électroniques à deux bornes et leurs procédés de fabrication Download PDF

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Publication number
WO2016014345A3
WO2016014345A3 PCT/US2015/040815 US2015040815W WO2016014345A3 WO 2016014345 A3 WO2016014345 A3 WO 2016014345A3 US 2015040815 W US2015040815 W US 2015040815W WO 2016014345 A3 WO2016014345 A3 WO 2016014345A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
electrode
residing
electronic devices
terminal electronic
Prior art date
Application number
PCT/US2015/040815
Other languages
English (en)
Other versions
WO2016014345A2 (fr
Inventor
Gang Yu
Chan-Tong SHIEH
Zhao Chen
Original Assignee
Cbrite Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/339,210 external-priority patent/US9741901B2/en
Application filed by Cbrite Inc. filed Critical Cbrite Inc.
Publication of WO2016014345A2 publication Critical patent/WO2016014345A2/fr
Publication of WO2016014345A3 publication Critical patent/WO2016014345A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/29—Diodes comprising organic-inorganic heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/36—Devices specially adapted for detecting X-ray radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

La présente invention concerne des dispositifs électroniques à deux bornes, tels que des photodétecteurs, des dispositifs photovoltaïques et des dispositifs électroluminescents. Les dispositifs comportent : une première électrode placée sur un substrat, la première électrode comprenant une couche de métal; une couche I comprenant un matériau isolant non organique ou semi-conducteur large bande placé au sommet de la première électrode et aligné avec la première électrode, le matériau isolant non organique ou semi-conducteur large bande étant un composant du métal de la première électrode; une couche semi-conductrice, comprenant de préférence un semi-conducteur de type P, placé sur la couche I; et une seconde électrode placée sur la couche semi-conductrice, l'électrode comprenant une couche d'un matériau conducteur. La bande interdite du matériau de la couche semi-conductrice est de préférence plus petite que la bande interdite du matériau de la couche I. La bande interdite du matériau de la couche I est de préférence supérieure à 2,5 eV.
PCT/US2015/040815 2014-07-23 2015-07-16 Dispositifs électroniques à deux bornes et leurs procédés de fabrication WO2016014345A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/339,210 US9741901B2 (en) 2006-11-07 2014-07-23 Two-terminal electronic devices and their methods of fabrication
US14/339,210 2014-07-23

Publications (2)

Publication Number Publication Date
WO2016014345A2 WO2016014345A2 (fr) 2016-01-28
WO2016014345A3 true WO2016014345A3 (fr) 2016-03-17

Family

ID=53762382

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/040815 WO2016014345A2 (fr) 2014-07-23 2015-07-16 Dispositifs électroniques à deux bornes et leurs procédés de fabrication

Country Status (1)

Country Link
WO (1) WO2016014345A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9741901B2 (en) 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
TWI782937B (zh) * 2017-04-10 2022-11-11 日商松下知識產權經營股份有限公司 攝像裝置
FR3065583B1 (fr) * 2017-04-20 2019-06-28 Isorg Dispositif de detection d'un rayonnement comprenant des photodiodes organiques
US20200161483A1 (en) * 2017-06-23 2020-05-21 King Abdullah University Of Science And Technology Hole blocking layers for electronic devices and method of producing an electronic device having a hole-blocking layer
CN111490176B (zh) * 2019-01-28 2022-08-02 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法、电子装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080169464A1 (en) * 2006-11-07 2008-07-17 Diode Solutions, Inc. Metal-insulator- metal (MIM) devices and their methods of fabrication
WO2012071107A1 (fr) * 2010-11-23 2012-05-31 Qd Vision, Inc. Dispositif comportant des nanocristaux semi-conducteurs et procédé associé
WO2012138410A1 (fr) * 2011-04-02 2012-10-11 Qd Vision, Inc. Dispositif comprenant des points quantiques

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080169464A1 (en) * 2006-11-07 2008-07-17 Diode Solutions, Inc. Metal-insulator- metal (MIM) devices and their methods of fabrication
WO2012071107A1 (fr) * 2010-11-23 2012-05-31 Qd Vision, Inc. Dispositif comportant des nanocristaux semi-conducteurs et procédé associé
WO2012138410A1 (fr) * 2011-04-02 2012-10-11 Qd Vision, Inc. Dispositif comprenant des points quantiques

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GEFFROY B; LE ROY P; PRAT C: "Organic light-emitting diode (OLED) technology: materials, devices anddisplay technologies", POLYMER INTERNATIONAL, vol. 55, no. 6, June 2006 (2006-06-01), pages 572 - 582, XP009186770, ISSN: 0959-8103, DOI: 10.1002/pi.1974 *

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