WO2015176715A1 - Method for the vibration-assisted, metallic joining of components face to face - Google Patents

Method for the vibration-assisted, metallic joining of components face to face Download PDF

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Publication number
WO2015176715A1
WO2015176715A1 PCT/DE2015/100207 DE2015100207W WO2015176715A1 WO 2015176715 A1 WO2015176715 A1 WO 2015176715A1 DE 2015100207 W DE2015100207 W DE 2015100207W WO 2015176715 A1 WO2015176715 A1 WO 2015176715A1
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Prior art keywords
components
connection
component
intermediate medium
metallic
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PCT/DE2015/100207
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German (de)
French (fr)
Inventor
Hans-Jürgen HESSE
Michael BRÖKELMANN
Dirk Siepe
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Hesse Gmbh
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Publication date
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Publication of WO2015176715A1 publication Critical patent/WO2015176715A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/29293—Material of the matrix with a principal constituent of the material being a solid not provided for in groups H01L2224/292 - H01L2224/29291, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
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    • H01L2224/29199—Material of the matrix
    • H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
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    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/325—Material
    • H01L2224/32501—Material at the bonding interface
    • H01L2224/32503—Material at the bonding interface comprising an intermetallic compound
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83205—Ultrasonic bonding
    • H01L2224/83206—Direction of oscillation
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    • H01L2224/83205—Ultrasonic bonding
    • H01L2224/83207—Thermosonic bonding
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8381—Soldering or alloying involving forming an intermetallic compound at the bonding interface
    • H—ELECTRICITY
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Definitions

  • the invention provides to connect two components over a metallic intermediate medium electrically conductive surface, wherein at least at the contact surfaces of the components an intermetallic phase is formed.
  • soldering at temperatures up to 450 ° C refers to soft soldering, brazing at temperatures above 450 ° C and high-temperature soldering at temperatures above 900 ° C.
  • Object of the present invention is insofar, a modified
  • Function component prevents and in particular the mechanical or thermal stress of the same during the production of cohesive
  • the invention provides that oscillations are impressed on at least one of the two components to be connected to each other by an additional energy source. By impressing the vibrations, the connection process is supported and optimized. In particular, vibrations in the range of 1 kHz to 400 kHz, preferably vibrations in the range of 10 kHz to 250 kHz and more preferably ultrasonic vibrations in the range of 20 kHz to 230 kHz are provided.
  • Vibrational energy required for the preparation of the compound temperatures and / or the pressure can sometimes be significantly reduced.
  • thinner electronic functional components or electronic functional components with a larger can by connecting method according to the invention thinner
  • IGBT power transistors
  • Power_MOS power transistors
  • planar metallic connecting surface serves to produce the method according to the invention
  • Component arrangements do not regularly exchange information about a in the
  • the thermal connection ensures that, in later operation, heat is effectively dissipated from the functional component in the direction of the substrate or carrier material, and damage to the functional component due to overheating during operation is reliably prevented.
  • Corrosion tendency can be reduced, so that a direct further processing of created by the inventively connected components component assembly without cleaning is possible.
  • a chip can be applied to a substrate by the method according to the invention and then contacted by wire bonding to produce the information connections or the power supply.
  • the mechanical vibrations make it possible to break open an uppermost layer of the contact surfaces, for example an oxide layer, which may be formed on the components to be connected. Accordingly, non-noble or contaminated surfaces can be processed or the bonding process according to the invention can be applied to such substrates.
  • the bonding method according to the invention is therefore particularly robust and inexpensive to use. If the connection of the components takes place according to the method according to the invention by a combination of a reduced pressure and a vibration excitation, ultrasonic die bonders can be used as production s au tomatoes. This leads to a particularly good placement accuracy when positioning the electronic functional components on the substrate or carrier material. Due to the small tolerances, the chip area can be increased or it can be made smaller while maintaining the contact surface of the chip. In addition, the electronic functional component is mounted directly end firmly by the inventive method, so that a change in position or
  • the vibration excitation can be provided in a connection plane defined by the mutually parallel contact surfaces.
  • the vibration excitation can be provided in a connection plane defined by the mutually parallel contact surfaces.
  • the oscillation excitation can be done either in two orthogonal directions of vibration in the connection plane or on the one hand in the connection plane and the other perpendicular thereto.
  • vibration excitation can take place three-dimensionally in three mutually orthogonal directions of oscillation.
  • the oscillation excitation can take place three-dimensionally in three mutually orthogonal directions of oscillation.
  • Vibrational excitation occur at one or more frequencies. In each case, this applies to the one-dimensional, two-dimensional or three-dimensional
  • Vibration excitation For example, the vibration excitation at
  • an excitation in the ultrasonic range at frequencies of 20 kHz to 230 kHz is advantageous.
  • excitation frequencies of up to 250 kHz or more are advantageous.
  • silver flakes and, optionally, wax as a binder for the silver flakes are provided as intermediate medium between the mutually facing contact surfaces of the two components to be joined together.
  • the two components to be joined are pressed against one another, the intermediate medium and / or at least one of the two components to be connected heated to temperatures of more than 250 ° C and additionally at least one of the two components
  • Vibrations preferably to ultrasonic vibrations is excited.
  • a vibration-assisted sintering method is proposed in which in a
  • solder and, optionally, a flux between the two components to be joined together are provided as intermediate medium.
  • the connection then takes place essentially without pressure in the sense that the process pressures customary for the production of a sintered connection are dispensed with. Only the pressing forces necessary for impressing or transmitting the vibrations to the component are impressed.
  • the provision of ultrasound in the connection point reduces the viscosity of the intermediate medium or of the flux, with the result that air can escape better from the connection zone even without the provision of the flux or with little flux, and air inclusions which cause the thermal and electrical connection of the components adversely affect avoided.
  • a washing of the connection point reduces the viscosity of the intermediate medium or of the flux, with the result that air can escape better from the connection zone even without the provision of the flux or with little flux, and air inclusions which cause the thermal and electrical connection of the components adversely affect avoided.
  • Component arrangement can be omitted.
  • the solder joint is preferred
  • Fig. 1 shows a first process step in the manufacture of an inventive
  • Fig. 2 shows a second method step in the manufacture of the inventive
  • first component 1 serving as a substrate or carrier material, which medium comprises a metal granulate 4 as a metallic constituent and a additional non-metallic component 5, for example, wax as a binder for the metal granules 4 provides.
  • second component 2 for example, an electronic functional component (chip, power transistor) to the
  • Contact surface 7 of the electronic functional component 2 faces. In any case, the orientation of the contact surfaces 6, 7 is approximately parallel and defines a connection plane 8 of the connection arrangement.
  • Function component 2 and the intermediate medium 3 is heated to a temperature T.
  • the components 1, 2 are pressed with the pressure p holistically against each other.
  • the electronic functional component 2 becomes
  • connection arrangement according to FIG. 4 is created, in which a planar metallic connection between the electronic functional component 2 and the substrate 2 is produced.
  • the connection serves, in particular, for the mechanical contacting of the electronic functional component 2 and the thermal coupling thereof to the substrate 1.
  • Information contacts to the electronic functional component 2 for example, be produced by means of ultrasonic wire bonding.
  • an intermetallic phase is formed in the melt (intermediate medium 3) as part of a vibration-assisted soldering process.
  • flux and solder can be provided as an intermediate medium.
  • vibration assisted sintering a metal-to-metal connection is made with the intermetallic phase formed at the contact surfaces of the components and the metal granules therebetween
  • not shown embodiment of the invention can be applied to the heating of the components 1, 2 or the intermediate medium 3 or on the mutual pressing of the components 1, 2 are dispensed with.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

The invention relates to a method for the vibration-assisted, metallic joining of two components face to face, in particular for contacting via a metal an electronic functional component, for example a chip or a power transistor on a substrate or carrier material, wherein an intermediate medium formed in any case by a metal component at least in parts is provided between two facing, preferably even contact surfaces of the two components to be joined, thus producing a metallic connection between the two components face to face, while the connection medium and/or at least one of the two components is heated and/or the components are pressed against each other, and the metallic connection is produced while at least one component, preferably the electronic functional component, is made to vibrate, preferably at an ultrasonic frequency.

Description

Verfahren zum schwingungsunterstützten flächigen metallischen Verbinden von Bauteilen  Method for vibration-assisted surface metal joining of components
Die Erfindung sieht vor, zwei Bauteile über ein metallisches Zwischenmedium elektrisch leitend flächig zu verbinden, wobei jedenfalls an den Kontaktflächen der Bauteile eine intermetallische Phase ausgebildet wird. The invention provides to connect two components over a metallic intermediate medium electrically conductive surface, wherein at least at the contact surfaces of the components an intermetallic phase is formed.
Bekannt ist, dass Bauteile mittels Sintern bei Temperaturen von zirka 250 °C bis 350 °C und Drücken von 0,1 MPa bis 30 MPa verbunden werden. Darüber hinaus ist bekannt, Bauteile durch Löten und/oder Diffusionslöten zu verbinden. Die Lötverfahren arbeiten im Wesentlichen drucklos. Definitionsgemäß spricht man beim Löten bei Temperaturen bis 450 °C von Weichlöten, bei Temperaturen ab 450 °C von Hartlöten und bei Temperaturen von über 900 °C von Hochtemperaturlöten. It is known that components are connected by means of sintering at temperatures of about 250 ° C to 350 ° C and pressures of 0.1 MPa to 30 MPa. In addition, it is known to connect components by soldering and / or diffusion soldering. The soldering processes work essentially without pressure. By definition, soldering at temperatures up to 450 ° C refers to soft soldering, brazing at temperatures above 450 ° C and high-temperature soldering at temperatures above 900 ° C.
Jeweils besteht bei den bekannten Verbindungs verfahren das Problem, dass infolge der Prozessführung durch die Temperatur beziehungsweise die Drücke die miteinander zu verbindenden Bauteile beschädigt werden können. Insbesondere beim Applizieren einer elektronischen Funktionskomponente, beispielsweise eines ungehäusten Chips (zum Beispiel Leistungstransistor), auf ein Substrat oder ein anderes Trägermaterial ist eine Beschädigung der elektronischen Funktionskomponente nicht akzeptabel. Es müssen daher ausreichend robust gestaltete elektronische Funktionskomponenten mit einer ausreichenden mechanischen Festigkeit beziehungsweise Dicke verarbeitet werden. In each case there is in the known connection method, the problem that due to the process control by the temperature or the pressures, the components to be joined together can be damaged. In particular, when applying an electronic functional component, for example, an unhoused chip (for example, power transistor), to a substrate or other carrier material is a Damage to the electronic functional component not acceptable. It must therefore be processed sufficiently robust designed electronic functional components with a sufficient mechanical strength or thickness.
Aufgabe der vorliegenden Erfindung ist es insofern, ein modifiziertes Object of the present invention is insofar, a modified
Verbindungsverfahren anzugeben, welches einer Beschädigung der Specify connection method, which damage the
Funktionskomponente vorbeugt und die insbesondere mechanische beziehungsweise thermische Belastung derselben während der Herstellung der stoffschlüssigen Function component prevents and in particular the mechanical or thermal stress of the same during the production of cohesive
Verbindung reduziert. Connection reduced.
Die Erfindung sieht vor, dass durch eine zusätzliche Energiequelle Schwingungen auf wenigstens eines der zwei miteinander zu verbindenden Bauteile aufgeprägt werden. Durch das Aufprägen der Schwingungen wird der Verbindungsprozess unterstützt und optimiert. Insbesondere werden Schwingungen im Bereich von 1 kHz bis 400 kHz, bevorzugt Schwingungen im Bereich von 10 kHz bis 250 kHz und besonders bevorzugt Ultraschallschwingungen im Bereich von 20 kHz bis 230 kHz vorgesehen. The invention provides that oscillations are impressed on at least one of the two components to be connected to each other by an additional energy source. By impressing the vibrations, the connection process is supported and optimized. In particular, vibrations in the range of 1 kHz to 400 kHz, preferably vibrations in the range of 10 kHz to 250 kHz and more preferably ultrasonic vibrations in the range of 20 kHz to 230 kHz are provided.
Der besondere Vorteil der Erfindung besteht darin, dass durch das zusätzliche The particular advantage of the invention is that by the additional
Aufprägen von Schwingungen beziehungsweise die Bereitstellung von Impact of vibrations or the provision of
Schwingungsenergie die zur Herstellung der Verbindung erforderlichen Temperaturen und/oder der Druck mitunter deutlich gesenkt werden kann. Infolge der reduzierten Temperaturbelastung und/oder der reduzierten Druckbelastung können durch das erfindungsgemäße Verbindungsverfahren dünnere elektronische Funktionskomponenten beziehungsweise elektronische Funktionskomponenten mit einer größeren Vibrational energy required for the preparation of the compound temperatures and / or the pressure can sometimes be significantly reduced. As a result of the reduced temperature load and / or the reduced pressure load thinner electronic functional components or electronic functional components with a larger can by connecting method according to the invention thinner
Kontaktfläche kontaktiert werden. Beispielsweise können nach dem erfindungsgemäßen Verfahren Leistungstransistoren (IGBT, Power_MOS) schwingungsunter stützt auf ein Substrat gesintert oder verlötet werden. Contact surface to be contacted. For example, according to the method of the invention, power transistors (IGBT, Power_MOS) can be sintered or soldered to vibration-based substrates.
Anders als beispielsweise beim Ultraschalldrahtbonden dient die flächige metallische Verbindungsfläche der nach dem erfindungsgemäßen Verfahren hergestellten Unlike, for example, in the case of ultrasonic wire bonding, the planar metallic connecting surface serves to produce the method according to the invention
Bauteilanordnungen regelmäßig nicht dem Informationsaustausch über eine im Component arrangements do not regularly exchange information about a in the
Vergleich zu den Abmessungen des Chips kleine, lokale Kontaktfläche. Vielmehr dient die flächige metallische Verbindung zum mechanischen Festlegen der Funktionskomponente und zur thermischen Anbindung der Funktionskomponente mit dem Substrat beziehungsweise Trägermaterial. Die thermische Anbindung sorgt dafür, dass im späteren Betrieb Wärme von der Funktionskomponente effektiv in Richtung des Substrats beziehungsweise Trägermaterials abgeführt und eine Beschädigung der Funktionskomponente durch Überhitzung während des Betriebs zuverlässig vermieden wird. Compared to the dimensions of the chip small, local contact area. Rather serves the two-dimensional metallic connection for the mechanical fixing of the functional component and for the thermal connection of the functional component to the substrate or carrier material. The thermal connection ensures that, in later operation, heat is effectively dissipated from the functional component in the direction of the substrate or carrier material, and damage to the functional component due to overheating during operation is reliably prevented.
Infolge der geringeren thermischen und mechanischen Belastung der Bauteile während der Herstellung der Verbindung können Bauteile mit geringerer Dicke beziehungsweise größere Bauteile verbaut werden. Überdies ist einer mechanischen Beschädigung der Bauteile entgegengewirkt. Ferner kann durch die niedrigeren Temperaturen die Due to the lower thermal and mechanical stress on the components during the production of the compound components with a smaller thickness or larger components can be installed. Moreover, a mechanical damage of the components is counteracted. Furthermore, due to the lower temperatures, the
Korrosionsneigung reduziert werden, so dass eine direkte weitere Verarbeitung einer durch die erfindungsgemäß verbundenen Bauteile geschaffenen Bauteilanordnung ohne Reinigung möglich ist. Beispielsweise kann ein Chip nach dem erfindungsgemäßen Verfahren auf ein Substrat aufgebracht werden und anschließend mittels Drahtbonden kontaktiert werden zur Herstellung der Informationsanschlüsse beziehungsweise der Energieversorgung. Corrosion tendency can be reduced, so that a direct further processing of created by the inventively connected components component assembly without cleaning is possible. For example, a chip can be applied to a substrate by the method according to the invention and then contacted by wire bonding to produce the information connections or the power supply.
Es hat sich zudem gezeigt, dass durch das Aufprägen von Schwingungen die It has also been shown that by the imposition of vibrations the
Prozesszeiten beim Verbinden der Bauteile reduziert und der Durchsatz in der Fertigung verbessert werden kann. Reduced process times when connecting the components and the throughput in the manufacturing can be improved.
Die mechanischen Schwingungen ermöglichen es überdies, eine oberste Schicht der Kontaktflächen, beispielsweise ein Oxidschicht, welche an den zu verbindenden Bauteilen ausgebildet sein kann, aufzubrechen. Es können demzufolge unedle beziehungsweise kontaminierte Oberflächen verarbeitet werden beziehungsweise der erfindungsgemäße Verbindungsprozess kann auf solche Substrate angewendet werden. Das erfindungsgemäße Verbindungsverfahren wird hierdurch besonders robust und preiswert in der Anwendung. Sofern die Verbindung der Bauteile nach dem erfindungsgemäßen Verfahren durch eine Kombination von einem reduzierten Druck und einer Schwingungsanregung erfolgt, können Ultraschall-Die-Bonder als Fertigung s au tomaten eingesetzt werden. Dies führt zu einer besonders guten Platziergenauigkeit beim Positionieren der elektronischen Funktionskomponenten auf dem Substrat beziehungsweise Trägermaterial. Aufgrund der geringen Toleranzen kann die Chipfläche vergrößert werden oder es kann bei einer Beibehaltung der Kontaktfläche der Chip kleiner gestaltet werden. Zudem ist die elektronische Funktionskomponente durch das erfindungsgemäße Verfahren unmittelbar endfest montiert, so dass einer Positionsänderung beziehungsweise Moreover, the mechanical vibrations make it possible to break open an uppermost layer of the contact surfaces, for example an oxide layer, which may be formed on the components to be connected. Accordingly, non-noble or contaminated surfaces can be processed or the bonding process according to the invention can be applied to such substrates. The bonding method according to the invention is therefore particularly robust and inexpensive to use. If the connection of the components takes place according to the method according to the invention by a combination of a reduced pressure and a vibration excitation, ultrasonic die bonders can be used as production s au tomatoes. This leads to a particularly good placement accuracy when positioning the electronic functional components on the substrate or carrier material. Due to the small tolerances, the chip area can be increased or it can be made smaller while maintaining the contact surface of the chip. In addition, the electronic functional component is mounted directly end firmly by the inventive method, so that a change in position or
Verschiebung der elektronischen Funktionskomponente entgegengewirkt ist. Displacement of the electronic function component is counteracted.
Nach einer Weiterbildung der Erfindung kann die Schwingungsanregung, According to a development of the invention, the vibration excitation,
eindimensional, zweidimensional oder dreidimensional erfolgen. Beispielsweise kann die Schwingungsanregung in einer durch die zueinander parallelen Kontaktflächen definierten Verbindungsebene vorgesehen werden. Alternativ kann die one-dimensional, two-dimensional or three-dimensional. For example, the vibration excitation can be provided in a connection plane defined by the mutually parallel contact surfaces. Alternatively, the
Schwingungsanregung senkrecht zur Verbindungsebene erfolgen. Sofern die Vibration excitation perpendicular to the connection plane. Unless the
Schwingungen zweidimensional aufgeprägt werden, kann die Schwingung sanregung entweder in zwei orthogonalen Schwingungsrichtungen in der Verbindungsebene erfolgen oder zum einen in der Verbindungsebene und zum anderen senkrecht hierzu. Optional kann eine Schwingungsanregung dreidimensional in drei zueinander orthogonalen Schwingungsrichtungen erfolgen. Beispielsweise kann die Oscillations are impressed two-dimensionally, the oscillation excitation can be done either in two orthogonal directions of vibration in the connection plane or on the one hand in the connection plane and the other perpendicular thereto. Optionally, vibration excitation can take place three-dimensionally in three mutually orthogonal directions of oscillation. For example, the
Schwingungsanregung bei einer oder bei mehreren Frequenzen erfolgen. Jeweils gilt dies bei der eindimensionalen, zweidimensionalen oder dreidimensionalen Vibrational excitation occur at one or more frequencies. In each case, this applies to the one-dimensional, two-dimensional or three-dimensional
Schwingungsanregung. Beispielsweise kann die Schwingungsanregung bei Vibration excitation. For example, the vibration excitation at
verschiedenen Frequenzen erfolgen, insbesondere über ein rosa Rauschen oder ein weißes Rauschen. different frequencies, in particular via a pink noise or a white noise.
Sofern die Schwingungen in der Verbindungsebene angeregt werden, ist eine Anregung im Ultraschallbereich bei Frequenzen von 20 kHz bis 230 kHz vorteilhaft. Bei einer Anregung von Schwingungen senkrecht zur Verbindungsebene sind Anregefrequenzen von bis zu 250 kHz oder mehr vorteilhaft. Nach einer Weiterbildung der Erfindung werden als Zwischenmedium Silberflakes und optional Wachs als Bindemittel für die Silberflakes zwischen den einander zugewandten Kontaktflächen der zwei miteinander zu verbindenden Bauteile vorgesehen. If the vibrations in the connection plane are excited, an excitation in the ultrasonic range at frequencies of 20 kHz to 230 kHz is advantageous. With excitation of vibrations perpendicular to the connection plane, excitation frequencies of up to 250 kHz or more are advantageous. According to a development of the invention, silver flakes and, optionally, wax as a binder for the silver flakes are provided as intermediate medium between the mutually facing contact surfaces of the two components to be joined together.
Insbesondere kann hier vorgesehen werden, dass beim Herstellen der Verbindung die zwei zu verbindenden Bauteile gegeneinander angedrückt, das Zwischenmedium und/oder wenigstens eins der zwei zu verbindenden Bauteile auf Temperaturen von mehr als 250 °C erwärmt und zusätzlich wenigstens eins der zwei Bauteile zu In particular, it can be provided here that, when the connection is made, the two components to be joined are pressed against one another, the intermediate medium and / or at least one of the two components to be connected heated to temperatures of more than 250 ° C and additionally at least one of the two components
Schwingungen, bevorzugt zu Ultraschallschwingungen angeregt wird. Es wird insofern ein schwingungsunterstütztes Sinterverfahren vorgeschlagen, bei dem bei einem Vibrations, preferably to ultrasonic vibrations is excited. In this respect, a vibration-assisted sintering method is proposed in which in a
Verzicht auf Wachs als Bindemittel eine saubere Verbindung hergestellt werden kann. Sofern auf das Bindemittel nicht verzichtet wird, wird dieses beim Herstellen der Verbindung durch die Ultraschallschwingungen zu den Rändern ausgetrieben und verbleibt am Rand. Es kann insofern sehr gut entfernt beziehungsweise ausgewaschen werden. Zugleich reduziert sich die Porosität des Zwischenmediums nach dem Dispensing with wax as a binder a clean connection can be made. If the binder is not dispensed with, this is expelled during the production of the compound by the ultrasonic vibrations to the edges and remains at the edge. It can be very well removed or washed out. At the same time, the porosity of the intermediate medium reduces after the
Verbinden, sodass sich eine verbesserte thermische, mechanische und elektrische Ankopplung ergibt und höhere Stromdichten möglich werden. Connect, resulting in improved thermal, mechanical and electrical coupling and higher current densities are possible.
Nach einer Weiterbildung der Erfindung wird als Zwischenmedium Lötzinn und optional ein Flussmittel zwischen den zwei miteinander zu verbindenden Bauteilen vorgesehen. Die Verbindung erfolgt dann im Wesentlichen drucklos in dem Sinne, dass auf die für die Herstellung einer Sinterverbindung üblichen Prozessdrücke verzichtet wird. Allein die zum Aufprägen beziehungsweise Übertragen der Schwingungen auf das Bauteil notwendigen Anpresskräfte werden insofern aufgeprägt. Vorteilhaft verringert sich durch das Vorsehen des Ultraschalls in der Verbindungsstelle die Viskosität des Zwischenmediums beziehungsweise des Flussmittels mit der Folge, dass Luft auch ohne das Vorsehen des Flussmittels oder mit wenig Flussmittel aus der Verbindungszone besser entweichen kann beziehungsweise abtransportiert wird und Lufteinschlüsse, welche die thermische und elektrische Verbindung der Bauteile negativ beeinflussen, vermieden werden. Darüber hinaus kann gegebenenfalls auf ein Waschen der According to a development of the invention, solder and, optionally, a flux between the two components to be joined together are provided as intermediate medium. The connection then takes place essentially without pressure in the sense that the process pressures customary for the production of a sintered connection are dispensed with. Only the pressing forces necessary for impressing or transmitting the vibrations to the component are impressed. Advantageously, the provision of ultrasound in the connection point reduces the viscosity of the intermediate medium or of the flux, with the result that air can escape better from the connection zone even without the provision of the flux or with little flux, and air inclusions which cause the thermal and electrical connection of the components adversely affect avoided. In addition, if necessary, a washing of the
Bauteilanordnung verzichtet werden. Die Lötverbindung wird bevorzugt bei Component arrangement can be omitted. The solder joint is preferred
Temperaturen von bis zu 400 °C und besonders bevorzugt bei Temperaturen von nicht mehr als 370 °C hergestellt. Insbesondere kann durch den Verzicht auf das Flussmittel beim Löten beziehungsweise das Bindemittel beim Sintern einem Verbrennen des Bindemittels entgegengewirkt und eine Kontaminierung vermieden beziehungsweise reduziert werden. Temperatures of up to 400 ° C and more preferably produced at temperatures of not more than 370 ° C. In particular, by doing without the flux during soldering or the binder during sintering counteracts burning of the binder and a contamination can be avoided or reduced.
Aus den weiteren Unteransprüchen und der nachfolgenden Beschreibung sind weitere Vorteile, Merkmale und Einzelheiten der Erfindung zu entnehmen. Dort erwähnte Merkmale können jeweils einzeln für sich oder auch in beliebiger Kombination erfindungswesentlich sein. So kann auf die Offenbarung zu den einzelnen From the other dependent claims and the following description further advantages, features and details of the invention can be found. There mentioned features may be essential to the invention individually or in any combination. So may the revelation to the individual
Erfindungsaspekten stets wechselseitig Bezug genommen werden. Die Zeichnungen dienen lediglich beispielhaft der Klarstellung der Erfindung und haben keinen einschränkenden Charakter. Invention aspects are always mutually referenced. The drawings are merely illustrative of the clarification of the invention and are not of a restrictive nature.
Es zeigen: Show it:
Fig. 1 einen ersten Verfahrensschritt beim Herstellen einer erfindungsgemäßen Fig. 1 shows a first process step in the manufacture of an inventive
Bauteilanordnung mit zwei durch ein Zwischenmedium verbundenen Bauteilen,  Component arrangement with two components connected by an intermediate medium,
Fig. 2 einen zweiten Verfahrens schritt beim Herstellen der erfindungsgemäßen Fig. 2 shows a second method step in the manufacture of the inventive
B auteilanordnung ,  B auteilanordnung,
Fig. 3 einen dritten Verfahrensschritt beim Herstellen der erfindungsgemäßen 3 shows a third method step in the manufacture of the invention
B auteilanordnung und  B auteilanordnung and
Fig. 4 die nach dem erfindungsgemäßen Verbindungsverfahren hergestellte Fig. 4 produced by the bonding method of the invention
B auteilanordnung .  B auteilanordnung.
Die Fig. 1 bis 3 zeigen prinzipiell den Verfahrensablauf nach dem erfindungsgemäßen Verfahren zum Herstellen einer flächigen metallischen Verbindung zwischen zwei Bauteilen (1, 2). Es wird hierzu in einem ersten Verfahrens schritt auf ein als Substrat beziehungsweise Trägermaterial dienendes erstes Bauteil 1 ein Zwischenmedium 3 aufgebracht, welches ein Metallgranulat 4 als metallischen Bestandteil und eine zusätzliche nicht metallische Komponente 5, beispielsweise Wachs als Bindemittel für das Metallgranulat 4 vorsieht. Es wird dann das zweite Bauteil 2, beispielsweise eine elektronische Funktionskomponente (Chip, Leistungstransistor) so an das 1 to 3 show in principle the process sequence according to the inventive method for producing a flat metallic connection between two components (1, 2). For this purpose, in a first method step, an intermediate medium 3 is applied to a first component 1 serving as a substrate or carrier material, which medium comprises a metal granulate 4 as a metallic constituent and a additional non-metallic component 5, for example, wax as a binder for the metal granules 4 provides. It is then the second component 2, for example, an electronic functional component (chip, power transistor) to the
Zwischenmedium 3 angelegt, dass eine Kontaktfläche 6 des Substrats 1 einer Intermediate medium 3 is applied, that a contact surface 6 of the substrate 1 a
Kontaktfläche 7 der elektronischen Funktionskomponente 2 zugewandt ist. Die Orientierung der Kontaktflächen 6, 7 ist hierbei jedenfalls annähernd parallel und definiert eine Verbindungsebene 8 der Verbindungsanordnung. Zur Herstellung der elektrisch leitenden Verbindung werden dann das Substrat 1, die elektronische Contact surface 7 of the electronic functional component 2 faces. In any case, the orientation of the contact surfaces 6, 7 is approximately parallel and defines a connection plane 8 of the connection arrangement. To produce the electrically conductive connection then the substrate 1, the electronic
Funktionskomponente 2 und das Zwischenmedium 3 auf eine Temperatur T erwärmt. Darüber hinaus werden die Bauteile 1, 2 mit dem Druck p ganzheitlich gegeneinander angedrückt. Des Weiteren wird die elektronische Funktionskomponente 2 zu Function component 2 and the intermediate medium 3 is heated to a temperature T. In addition, the components 1, 2 are pressed with the pressure p holistically against each other. Furthermore, the electronic functional component 2 becomes
Ultraschallschwingungen 9 in der Verbindungsebene 8 angeregt. Es wird hierdurch die Verbindungsanordnung nach Fig. 4 geschaffen, bei der eine flächige metallische Verbindung zwischen der elektronischen Funktionskomponente 2 und dem Substrat 2 hergestellt wird. Die Verbindung dient insbesondere der mechanischen Kontaktierung der elektronischen Funktionskomponente 2 und der thermischen Kopplung derselben an das Substrat 1. Ultrasonic vibrations 9 in the connection plane 8 excited. As a result, the connection arrangement according to FIG. 4 is created, in which a planar metallic connection between the electronic functional component 2 and the substrate 2 is produced. The connection serves, in particular, for the mechanical contacting of the electronic functional component 2 and the thermal coupling thereof to the substrate 1.
Zusätzlich können in einem nachfolgenden Verfahrens schritt nicht dargestellte In addition, in a subsequent method step, not shown
Informationskontakte zu der elektronischen Funktionskomponente 2, beispielsweise mittels Ultraschalldrahtbondens hergestellt werden. Information contacts to the electronic functional component 2, for example, be produced by means of ultrasonic wire bonding.
Es wird bei der Anwendung des erfindungsgemäßen Verfahrens im Rahmen eines schwingungsunterstützten Lötprozesses eine intermetallische Phase in der Schmelze (Zwischenmedium 3) gebildet. Insbesondere können Flussmittel und Lötzinn als Zwischenmedium vorgesehen werden. Beim schwingungsunterstützten Sintern wird eine Metall-Metall- Verbindung hergestellt, wobei die intermetallische Phase an den Kontaktflächen der Bauteile gebildet ist und das Metallgranulat dazwischen In the application of the method according to the invention, an intermetallic phase is formed in the melt (intermediate medium 3) as part of a vibration-assisted soldering process. In particular, flux and solder can be provided as an intermediate medium. In vibration assisted sintering, a metal-to-metal connection is made with the intermetallic phase formed at the contact surfaces of the components and the metal granules therebetween
monometallisch verbunden ist. is connected monometallically.
Nach einer Alternativen, nicht dargestellten Ausführungsform der Erfindung kann auf das Erwärmen der Bauteile 1, 2 beziehungsweise des Zwischenmediums 3 oder auf das gegenseitige Andrücken der Bauteile 1, 2 verzichtet werden. According to an alternative, not shown embodiment of the invention can be applied to the heating of the components 1, 2 or the intermediate medium 3 or on the mutual pressing of the components 1, 2 are dispensed with.

Claims

Patentansprüche claims
1. Verfahren zum schwingungsunter stützen flächigen metallischen Verbinden von zwei Bauteilen (1, 2), insbesondere zum metallischen Kontaktieren einer elektronischen Funktionskomponente, beispielsweise eines Chips oder eines Leistungstransistors auf einem Substrat oder einem Trägermaterial, wobei zwischen zwei einander zugewandten und bevorzugt eben 1. A method for vibrationally supporting flat metallic joining of two components (1, 2), in particular for the metallic contacting of an electronic functional component, for example a chip or a power transistor on a substrate or a carrier material, wherein between two facing each other and preferably flat
ausgebildeten Kontaktflächen (6, 7) der zwei miteinander zu verbindenden Bauteile (1, 2) ein Zwischenmedium (3) vorgesehen wird, welches jedenfalls in Teilen durch einen metallischen Bestandteil gebildet ist, wobei die flächige metallische Verbindung der zwei Bauteile (1, 2) hergestellt wird, während das Verbindungsmedium und/oder wenigstens eines der zwei Bauteile (1, 2) erwärmt und/oder die Bauteile (1, 2) gegeneinander angedrückt werden und wobei die metallische Verbindung hergestellt wird, während wenigstens ein Bauteil (1, 2) und bevorzugt die elektronische Funktionskomponente zu Schwingungen (9), bevorzugt zu Ultraschallschwingungen angeregt wird.  formed contact surfaces (6, 7) of the two components to be interconnected (1, 2) an intermediate medium (3) is provided, which is in any case formed in parts by a metallic component, wherein the flat metallic connection of the two components (1, 2) is produced while the connecting medium and / or at least one of the two components (1, 2) is heated and / or the components (1, 2) are pressed against each other and wherein the metallic connection is made while at least one component (1, 2) and preferably the electronic functional component to vibrations (9), preferably to ultrasonic vibrations is excited.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass das Erwärmen des Verbindungsmediums und/oder des wenigstens einen der zwei Bauteile (1, 2) und/oder das gegeneinander Andrücken der zwei Bauteile (1, 2) jedenfalls abschnittsweise zeitgleich mit dem Anregen von wenigstens einem der zwei Bauteile (1, 2) zu Schwingungen (9) erfolgt. 2. The method according to claim 1, characterized in that the heating of the connection medium and / or the at least one of the two components (1, 2) and / or the pressing against each other of the two components (1, 2) at least in sections at the same time with the excitation of at least one of the two components (1, 2) to vibrations (9).
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Anregung der Schwingungen (9) in einer durch die Kontaktflächen (6, 7) definierten Verbindungsebene (8) erfolgt. 3. The method according to claim 1 or 2, characterized in that the excitation of the oscillations (9) in a by the contact surfaces (6, 7) defined connection plane (8).
4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass die Anregung der Schwingungen (9) senkrecht zu der durch die Kontaktflächen (6, 7) definierten Verbindungsebene (8) erfolgt. 4. The method according to any one of claims 1 to 3, characterized in that the excitation of the oscillations (9) perpendicular to the through the contact surfaces (6, 7) defined connection plane (8).
5. Verfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass die Schwingungsanregung zweidimensional erfolgt, entweder zum einen in der Verbindungsebene (8) und zum anderen senkrecht hierzu oder in zwei zueinander orthogonal, jeweils in der Verbindungsebene (8) gelegenen 5. The method according to any one of claims 1 to 4, characterized in that the vibration excitation takes place two-dimensionally, either on the one hand in the connecting plane (8) and the other perpendicular thereto or in two mutually orthogonal, respectively in the connecting plane (8) located
S chwingung srichtungen .  Swinging directions.
6. Verfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die Schwingungsanregung dreidimensional in drei zueinander orthogonalen 6. The method according to any one of claims 1 to 5, characterized in that the vibration excitation three-dimensionally in three mutually orthogonal
Schwingungsrichtungen erfolgt.  Vibration directions.
7. Verfahren nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass beim Verbinden der Bauteile (1, 2) eine intermetallische Phase jedenfalls an den gegenüberliegenden Kontaktflächen (6, 7) ausgebildet wird. 7. The method according to any one of claims 1 to 6, characterized in that when connecting the components (1, 2) an intermetallic phase in any case at the opposite contact surfaces (6, 7) is formed.
8. Verfahren nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass als metallischer Bestandteil des Zwischenmediums (3) ein Metallgranulat vorgesehen wird. 8. The method according to any one of claims 1 to 7, characterized in that as metal component of the intermediate medium (3) a metal granules is provided.
9. Verfahren nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, dass als Zwischenmedium (3) Silberflakes als Metallgranulat (4) und optional Wachs als Bindemittel (5) für die Silberflakes (4) zwischen den einander zugewandten Kontaktflächen (6, 7) der zwei miteinander zu verbindenden Bauteile (1, 2) vorgesehen wird. 9. The method according to any one of claims 1 to 8, characterized in that as intermediate medium (3) silver flakes as metal granules (4) and optionally wax as a binder (5) for the silver flakes (4) between the mutually facing contact surfaces (6, 7) the two components to be connected (1, 2) is provided.
Verfahren nach Anspruch 9, dadurch gekennzeichnet, dass zeitgleich das die Silberflakes (4) und optional den Wachs (5) aufweisende Zwischenmedium (3) und/oder wenigstens eines der zwei zu verbindenden Bauteile (1, 2) erwärmt werden, dass die zwei zu verbindenden Bauteile (1, 2) gegeneinander angedrückt werden und dass wenigstens eins der zwei Bauteile (1, 2) zu Schwingungen (9) und bevorzugt zu Ultraschallschwingungen angeregt werden. A method according to claim 9, characterized in that at the same time that the silver flakes (4) and optionally the wax (5) having intermediate medium (3) and / or at least one of the two components to be connected (1, 2) are heated, that the two to connecting components (1, 2) are pressed against each other and that at least one of the two components (1, 2) to vibrations (9) and preferably to ultrasonic vibrations are excited.
11. Verfahren nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass als Zwischenmedium (3) Lötzinn und optional ein Flussmittel (5) zwischen den zwei miteinander zu verbindende Bauteile (1, 2) vorgesehen wird. 11. The method according to any one of claims 1 to 10, characterized in that as intermediate medium (3) solder and optionally a flux (5) between the two components to be interconnected (1, 2) is provided.
Verfahren nach Anspruch 11, dadurch gekennzeichnet, dass die Verbindung zwei Bauteile (1, 2) im Wesentlichen drucklos erfolgt. A method according to claim 11, characterized in that the connection of two components (1, 2) takes place substantially without pressure.
PCT/DE2015/100207 2014-05-23 2015-05-21 Method for the vibration-assisted, metallic joining of components face to face WO2015176715A1 (en)

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