WO2015157054A1

WO2015157054A1 - Method of preparing a power electronic device

Info

Publication number: WO2015157054A1
Application number: PCT/US2015/023775
Authority: WO
Inventors: Noah SMICK; Michael Vyvoda
Original assignee: Gtat Corporation
Priority date: 2014-04-07
Filing date: 2015-04-01
Publication date: 2015-10-15
Also published as: TW201546953A

Abstract

A method of forming an electronic device, such as a power electronic device comprising a silicon carbide lamina, is disclosed. Various embodiments of this method are specifically described, leading to the preparation of electronic device precursor and fabrication of electronic devices.

Description

TITLE

A METHOD OF PREPARING A POWER ELECTRONIC DEVICE

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to U.S. Provisional Application No. 61/976,239, filed April 7, 2014, the contents of which are herein incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention.

[0001] The present invention relates to a method of forming an electronic device, particularly a power electronic device comprising a silicon carbide lamina.

2. Description of the Related Art.

[0002] Silicon carbide (SiC) has gained significant interest in recent years due to its outstanding chemical, physical, and electrical properties. Bulk single crystal SiC has been found to be useful in a variety of semiconductor applications, including, for example, as a substrate for material for components in power electronics, such as transistors, and in LEDs. In particular, solid state power devices which are used in switching or amplifying large voltages and currents are important components in communications, power delivery, and transportation applications, and silicon carbide has been found to have specific properties, such as a large band gap and superior thermal characteristic, for these areas. Furthermore, other applications for this material are also emerging.

[0003] Silicon carbide can be prepared by a variety of methods known in the art. For example, large single crystals of silicon carbide have been prepared using a physical vapor transport (PVT) method. For this method, a source, such as powdered silicon carbide, is provided in a high temperature region of a crystal growth furnace and heated. Also, a seed, such as a silicon carbide single crystal wafer, is provided in a lower temperature region. The silicon carbide is heated to sublime, and the resulting vapors reach the cooler silicon carbide seed upon which material is deposited. Alternatively, the source can be a mixture of silicon and carbon particles, which, upon heating, react to form SiC that subsequently sublimes and recrystallizes on the seed.

[0004] While large boules of silicon carbide can be produced using a crystal growth furnace, the process is often difficult to control and generally very expensive. For example, it is critical that the process conditions, such as the temperature gradient between the source and the seed, be held constant throughout the crystal growth process, which takes place typically over several days at greater than 2000°C, in order to produce a boule having consistent properties throughout. Small variations in process conditions can result in large changes to the quality of the grown silicon carbide boule. Furthermore, for many applications, thin layers or wafers of silicon carbide are needed, and this is generally accomplished by sawing or cutting materials from the boules, which results in significant loss of the expensive material loss from kerf formation. Finally, fabrication of electronic components of a power electronic device can be difficult to do on a relatively thin wafer without additional processing steps. Thus, in general, while silicon carbide has many properties that are desirable for applications such as power electronic devices, other materials, such as silicon, are often used instead due to their lower cost.

[0005] For this reason, there is a need in the industry for a low cost method for producing silicon carbide layers or wafers that can efficiently and cost-effectively be use to produce devices for power electronic applications.

SUMMARY OF THE INVENTION

[0006] The present invention relates to a method of fabricating an electronic device. The method comprises the steps of providing a silicon carbide donor body having a first surface, implanting ions through the first surface, with or without a formed device base layer, to define a cleave plane within the silicon carbide donor body, cleaving a lamina, with or without the device base layer, at the cleave plane, and fabricating the electronic device on the lamina. Various embodiments of this method are described. In one embodiment, the device base layer is formed on the silicon carbide donor body prior to implanting and cleaving. In another embodiment, the device base layer is formed after implanting but prior to cleaving. For this embodiment, it is preferred that ions are implanting below a threshold level to define a partial cleave plane within the silicon carbide donor body and that the lamina is mechanically cleaved at the partial cleave plane. In another embodiment, the device base layer is formed on the lamina after implanting and cleaving. For this embodiment, it is preferred that the lamina is free standing and has a thickness of greater than or equal to 30 microns.

[0007] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are intended to provide further explanation of the present invention, as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0008] FIG 1 and FIG 2 show various embodiments of the method of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0009] The present invention relates to a method of preparing an electronic device, particularly a device comprising a silicon carbide lamina.

[0010] In the method of the present invention, a silicon carbide lamina having at least one device base layer is prepared upon which an electronic device can be fabricated. The method comprises various steps, including the step of providing a donor silicon carbide body, the step of implanting ions into the donor body, the step of cleaving a silicon carbide lamina, and the step of forming the device base layer. An electronic device can then be prepared on the device base layer. These steps can occur in any order, as is appropriate for producing a silicon carbide lamina and the electronic device, and the overall steps can also be repeated as needed for producing additional lamina and/or additional devices.

[0011] The silicon carbide body used in the method of the present invention can be any bulk silicon carbide material of any practical thickness, such as from about 100 microns to about 10 mm. Thinner donor bodies may be more difficult to handle, and a relatively thicker material may be preferred, particularly if additional laminae are to be produced from the same donor body. Preferably, the donor body is monocrystalline silicon carbide, and can have any polytype, such as 6H or 4H, as appropriate for the desired electronic device. Furthermore, the silicon carbide donor body can vary in shape and size depending, for example, on the size of the silicon carbide lamina to be produced as well as on the capabilities of the ion implanter. For example, the silicon carbide donor body may be a circular wafer of monocrystalline silicon carbide having a diameter of 2 inches, 4 inches, or 6 inches.

[0012] The silicon carbide donor body has a top or first surface, and, in the method of the present invention, ions are implanted into the donor body through the first surface. A silicon carbide lamina, comprising this first surface, can then be cleaved and removed from the donor body in a subsequent or simultaneous exfoliation step, and the device can then be formed or completed on the resulting exfoliated silicon carbide lamina. Various specific embodiments of the method of the present invention will be described in more detail below. The resulting lamina can vary in thickness depending, for example, on the implantation conditions as well as on the thickness of any additional layers, such as device base layers, present on the first surface of the donor body. For example, the silicon carbide lamina may have a thickness of, for example, about 500 microns or less, preferably about 300 microns or less, and more preferably about 250 microns or less, including from about 2 to about 250 microns, from about 5 to about 100 microns, and from about 10 to about 50 microns.

[0013] In a first embodiment of the method of the present invention, a silicon carbide donor body is provided having a first surface upon which a device base layer is formed. The device base layer can be any of those known in the art of power electronics. For example, the device base layer can be a so-called front end of line (FEOL) layer or may include various components of an FEOL layer. As such, the device base layer can comprise an epitaxial layer, and, in particular, an epitaxial silicon carbide layer. The epitaxial layer can be deposited onto the first surface of the silicon carbide donor body using any known method, particular methods developed and used for the epitaxial growth of the voltage blocking drift layer in which the electronic device is prepared. The epitaxial layer can vary in thickness depending, for example, on the type of electronic device to be prepared, but is generally less than about 100 microns, including from about 1 to about 100 microns and about 5 to about 35 microns. In addition, the device base layer may further comprise various known front end of line device components, preferably formed or deposited on the epitaxial layer including, for example, at least one transistor formed by lithography, at least one doped silicon carbide layer formed by dopant implantation and activation, and at least one formed or grown gate or gate oxide. Other front end of line device components will be known to one of skill in the art. However, these components may also be formed on the epitaxial layer after cleaving an electronic device precursor from the donor body, described in more detail below.

[0014] For this first embodiment, the method further comprises the step of implanting ions through the device base layer as well as the first surface of the silicon carbide donor body. Using this implantation method, a cleave plane is formed beneath the first surface and within the silicon carbide donor body. The ion dosage for the implantation can comprise, for example, hydrogen, helium, or a combination thereof. Implantation conditions can be varied as needed to produce the desired cleave plane at the desired depth. For example, the ion dosage may be any dosage between about 1.0 x 10¹⁴ and 1.0 x 10¹⁸ H/cm², such as 0.5 - 3.0 x 10¹⁷ H/cm². The dosage energy can also be varied, such as between about 500 keV to about 3 MeV. In some embodiments, the ion implantation temperature may be maintained between about 200°C and 950°C, such as between 300°C and 800°C or between 550°C and 750°C, and this can be adjusted depending upon the specific type of silicon carbide and the thickness and composition of the device base layer. Other implantation conditions that may be adjusted may include initial process parameters such as implant dose rate and the ratio of implanted ions (such as H/He ion ratio).

[0015] After implantation, the first embodiment of the method of the present invention further comprises the step of cleaving an electronic device precursor from the silicon carbide donor body at the cleave plane. The cleave plane forms the back surface of the electronic device precursor and the device base layer is the front surface of the electronic device precursor. Thus, the electronic device precursor comprises a silicon carbide lamina along with the device base layer, which may also comprise a front end of line device component layer if present. The thickness of the electronic device precursor will depend on the implantation conditions and can be, for example, from about 1 micron to about 1000 microns, such as from about 5 microns to about 500 microns. Preferably, the electronic device precursor has a total thickness allowing it to be free standing, such as greater than about 10 microns, including greater than about 20 microns. [0016] Any method known in the art can be used to cleave or exfoliate the electronic device precursor from the silicon carbide donor body can be used, and specific cleaving conditions, such as exfoliation temperature, heating rate, exposure time, and exfoliation pressure, can be varied depending, for example, on the device precursor thickness as well as on the implant conditions used. For example, the electronic device precursor can be removed from the donor body using exfoliation temperatures from about 400°C to about 1200°C, such as from about 600°C to about 1000°C, and for a time between about 1 minute to about 60 minutes, such as from about 5 minutes to about 30 minutes. Higher exfoliation temperatures would generally require less time. In addition, a thermal temperature ramp up can be used in order to shorten the amount of time spent at the exfoliation temperature. By adjusting implantation and exfoliation conditions, the area of the resulting lamina that is substantially free of physical defects can be maximized. Optionally, the silicon carbide donor body may undergo thermal treatment prior to exfoliation. For example, the donor body may be heated below the exfoliation temperature in order to cause damage evolution in the cleave layer, such as by Oswalt ripening. Heat treatment may reduce the time and temperature needed for exfoliation of a full lamina and may produce a smoother cleave surface. An additional or alternative short duration thermal treatment, such as greater than 1600°C for 1-5 minutes, can also be optionally used after exfoliation to anneal the silicon carbide lamina of the electronic device and remove or reduce any damage potentially caused by implantation.

[0017] In addition to forming the electronic device precursor, the cleaving step also results in the formation of a remaining portion of the silicon carbide donor body, with the cleave plane forming the top surface of the remaining donor body. This can be used, with or without further processing, as a silicon carbide donor body from which additional silicon carbide laminae and/or electronic device precursors can be formed. Thus, for example, the top surface of the remaining donor body may be cleaned, etched, and/or polished, and the resulting polished donor body can be used for additional implantations and exfoliations. In this way, the expensive silicon carbide can be reused, and multiple layers can be produced from a single silicon carbide source.

[0018] Specific examples of this first embodiment of the method of the present invention are shown in FIG 1. This and other figures presented herein are merely illustrative in nature and not limiting, being presented by way of example only. Numerous modifications and other embodiments within the scope of one of ordinary skill in the art would also be contemplated as falling within the scope of the illustrated embodiments of the present invention.

[0019] As shown, epitaxial layer 110 is formed on first surface 105 of silicon carbide donor body 100. In Example A, front end of line (FEOL) device component layer 120 is then formed on epitaxial layer 110, and ions are subsequently implanted through this device base layer to form cleave plane 115 within donor body 100. Exfoliation produces electronic device precursor 137 comprising FEOL component layer 120 and epitaxial layer 110 on silicon carbide lamina 130. In Example B, implantation occurs through only epitaxial layer 110 and into silicon carbide donor body 100 to form cleave plane 116, and FEOL component layer 120 can then be formed on epitaxial layer 110 followed by exfoliation. Alternatively, exfoliation can occur first to form electronic device precursor 136 upon which FEOL layer 120 is subsequently formed. After exfoliation, a remaining silicon carbide donor body can then be recycled and used as silicon carbide donor body 100, with optional polishing of first surface 105, which is formed from cleave plane 115 or 116, if desired.

[0020] The resulting electronic device precursor may then be used to fabricate an electronic device. The device fabrication step may comprise forming at least one front end of line device component layer on the epitaxial layer of the electronic device precursor, if not already present. One or more additional device components may also be formed. For example, the device fabrication step may comprise forming an additional device layer sometimes called a back end of line (BEOL) device component layer on the front end of line device component layer of the electronic device precursor. The BEOL layer may be formed using any method known in the art including, for example, metal contact and/or interconnect formation processes, chip packaging, and dicing. A device precursor may also be attached to a permanent carrier substrate, such as silicon, and additional device layers can also be formed using processing steps known in the art. The device fabrication may include the optional use of a temporary carrier, such as glass or silicon, which can be used as a support to temporarily hold or secure the electronic device precursor during device fabrication. The temporary carrier may comprise a releasable adhesive to which the front surface of the electronic device is attached and later removed under appropriate conditions. Alternatively, vacuum or electrostatic force can be used to secure the temporary carrier. Also, since the electronic device precursor has a surface formed from the cleave plane, optional cleaning, etching, or polishing steps may be included.

[0021] Specific examples of device fabrication steps are also shown in FIG 1. For Example C, electronic device precursor 137, having back surface 135 formed by cleave plane 115 or 116, may be attached to temporary carrier 140 to provide a handle or support for subsequent steps. Permanent carrier 150 can then be attached to back surface 135 while the electronic device precursor is attached to temporary carrier 140. In addition, back surface 135 may be optionally cleaned, etched, or polished prior to attaching permanent carrier 150. Subsequent removal of temporary carrier 140 produces intermediate device 138, upon which back end of line (BEOL) device component layer 160 is formed, thereby producing electronic device 190 having silicon carbide layer 130 on permanent carrier 150 and upon which are device component layers 110, 120, and 160. In Example D, permanent carrier 150 is attached to electronic device precursor 137, and BEOL device layer 160 is then formed, thereby producing electronic device 190. These steps may also occur in a different order.

[0022] Thus, in this embodiment of the method of the present invention, the device base layer is formed prior to implantation and exfoliation, producing a silicon carbide layer comprising device components. This is particularly advantageous since formation of the device base layer, including an epitaxial layer and/or front end of line components, typically uses high temperature processes, generally requiring temperatures in excess of 1000°C. This is a similar temperature range used for exfoliation, and formation of the device base layer prior to implant avoids complications during exfoliation. In this embodiment, implantation occurs through the formed device base layer.

[0023] In a second embodiment of the method of the present invention, a silicon carbide donor body, which can be any of the donor bodies comprising silicon carbide described above, is provided having a first surface, and ions are implanted through this first surface into the silicon carbide donor body. While any implantation methods and conditions may be used, in this embodiment, ions are implanted at a level that is below a threshold level to thereby define a partial cleave plane within the silicon carbide donor body. The threshold level is defined as the level of ion implantation needed to form a cleave plane that will not thermally cleave using an exfoliation temperature of 1600°C. Thus, the partial cleave plane formed in this embodiment of the method of the present invention will not thermally cleave below a temperature of 1600°C. Preferably, the silicon carbide donor body, having a partial cleave plane therein, may undergo thermal treatment, such as at a temperature of below 1000°C for 2 - 10 minutes, in order to cause damage evolution in the cleave layer, such as by Oswalt ripening, as described above. This heat treatment is not sufficient to cause thermal cleaving of a silicon carbide lamina from the donor body at the partial cleave plane but may reduce the time and temperature needed for exfoliation of a full lamina and may produce a smoother cleave surface.

[0024] In this second embodiment, after formation of the partial cleave plane, a device base layer is then formed on the first surface of the silicon carbide donor body. This layer may comprise any of the device components described above. For example, the device base layer can be a so-called front end of line (FEOL) layer or may include various components of an FEOL layer. As such, the device base layer can comprise an epitaxial layer, and, in particular, an epitaxial silicon carbide layer, deposited onto the first surface of the silicon carbide donor body and/or various known front end of line device components formed or deposited on the epitaxial layer.

[0025] Subsequent to the formation of the device base layer, an electronic device precursor is cleaved from the silicon carbide donor body at the partial cleave plane. The partial cleave plane forms the back surface of the electronic device precursor while the device base layer is the front surface. While any exfoliation methods and conditions can be used, for this embodiment it is preferred that the electronic device precursor is cleaved using mechanical means since the partial cleave plane cannot be thermally cleaved below 1600°C. Any mechanical means may be used, including, for example, prying off the electronic device precursor layer with an axial force to initiate a crack at or along an outer edge of the cleave plane. Other mechanical means will be known to one of ordinary skill in the art. In some embodiments, it may be preferable to temporarily bond the donor body to a temporary carrier in order to provide support or means to hold the donor body during mechanical cleaving. For example, a temporary glass or silicon carrier may be bonded to either the device base layer or the bottom of the donor body (depending on the relative location of the partial cleave plane within the donor body) using a releasable adhesive having a bond strength greater than the partial cleave plane. The resulting electronic device precursor can then be used to form an electronic device, and any of the methods and components described above can be used.

[0026] In yet another embodiment of the method of the present invention, the method comprises the steps of providing a silicon carbide donor body having a first surface, implanting ions through the first surface of the silicon carbide donor body to define a cleave plane within the silicon carbide donor body, and cleaving a lamina from the silicon carbide donor body at the cleave plane. The donor body and both implanting and exfoliation methods and conditions described above can be used in this embodiment as well. The cleave plane forms a back surface of the lamina and the first surface of the silicon carbide donor body is a front surface of the lamina. For this embodiment, the lamina is free standing and has a thickness of greater than or equal to 20 microns, such as from about 20 microns to about 150 microns, including 25 microns to about 100 microns and 30 microns to about 50 microns.

[0027] As a free standing lamina, which can be readily handled, the silicon carbide lamina can then be used fabricate an electronic device. In particular, a device base layer can be formed on the front or back surface of the silicon carbide lamina, with or without additional processing of the surfaces (such as cleaning, etching, or polishing to remove damage potentially caused by implantation and/or cleaving), to form an electronic device precursor. Any of the device components described above can be used. For example, the device base layer can be a so-called front end of line (FEOL) layer or may include various components of an FEOL layer, such as an epitaxial layer, and, in particular, an epitaxial silicon carbide layer, deposited onto the front surface of the silicon carbide lamina and/or various known front end of line device components formed or deposited on the epitaxial layer. The resulting electronic device precursor can then be used to fabricate an electronic device, and any of the methods and components described above can be used.

[0028] For both of these further embodiments, the cleaving step also results in the formation of a remaining portion of the silicon carbide donor body, with the cleave plane forming the top surface of the remaining donor body. This can be used, with or without further processing (such as cleaning, etching, or polishing), as a silicon carbide donor body from which additional silicon carbide laminae and/or electronic device precursors can be formed.

[0029] Specific examples of these further embodiments of the method of the present invention are shown in FIG 2. As shown, silicon carbide donor body 200 is provided having first surface 205, and implantation occurs through first surface 205 to thereby form cleave plane 215. In Example A, this is a partial cleave plane formed by implantation at a level below the threshold level, and, as a result, epitaxial layer 210, front end of line (FEOL) device component layer 220, and/or back end of line (BEOL) device component layer 260 can then be formed without concern that the required temperatures may cause exfoliation. Mechanical cleaving can occur after formation of all of these layers (step E3), to form device intermediate 238. Alternatively, cleaving can occur after formation of any of the intermediate layer, such as after formation of FEOL device component layer 220 (step E2), to form electronic device precursor 237, followed by BEOL device layer formation (step L3), or after formation of epitaxial layer 210 (step El), to form electronic device precursor 236, followed by FEOL and BEOL device component layer formations (steps L2 and L3). Fabrication of electronic device 290 can occur after any of these steps by attaching permanent carrier 250 followed by the corresponding device layer formation (steps F2, F3, or F4). For example, following step F2, permanent carrier 250 can be bonded to electronic device precursor 236, and FEOL device component layer 220 and BEOL device component layer 260 can subsequently be formed. These occur at very high temperatures, and the permanent carrier type and bonding agent must be capable of surviving these temperatures. Preferably, for a monocrystalline SiC donor body, the permanent carrier is SiC, particularly multcrystalline SiC in order to provide a good thermal match. A temporary carrier method, not shown, may also be used similar to that shown in FIG 1. In Example B, implantation occurs to form silicon carbide lamina 230 having a thickness greater than 20 microns. As a free standing layer, this can then be used to form electronic device 290 by formation of epitaxial layer 210, FEOL device layer 220, and BEOL device layer 260 (steps L1, L2, and L3) followed by attaching to permanent carrier 250 to back surface 235 of silicon carbide lamina 230 (step F4). Thus, a permanent or temporary carrier is not needed as a handle or support means. However, as shown, the fabrication steps can also occur with attachment of permanent carrier 250 after various device component formation steps (steps F1 , P2, F3, and. F4).

[0030] Thus, in these further embodiments, the device base layer is formed either after Implantation. To ensure conditions do not cause exfoliation, in one embodiment implantation occurs at a level below the implantation threshold level and exfoliation occurs mechanically rather than thermally. In another embodiment, exfoliation follows implantation to form a free standing lamina, and device formation occurs on the exfoliated silicon carbide lamina having sufficient thickness that a support means is not needed and the lamina to be handled freely,

[0031 ] In the various specific embodiments of the method of the present invention, various electronic devices precursors can be formed from which various electronic devices can be fabricated. Therefore, the present invention further relates to the electronic devices and precursors prepared by the method of the present invention, and, in particular, using, one of the specific embodiments described in more detail above.

[0032] The foregoing description of preferred embodiments of the present invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Modifications and variations are possible in light of the above teachings, or may be acquired from practice of the invention. The embodiments were chosen and described m order to explain the principles of the invention and its practical application to enable one skilled in the art to utilize the invention in various embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims appended hereto, and their equivalents.

Claims

What is claimed is CLAIMS

1. A method of preparing an electronic device comprising a silicon carbide lamina, the method comprising the steps of:

i) providing a silicon carbide donor body having a first surface;

ii) forming a device base layer on the first surface of the silicon carbide donor;

iii) implanting ions through the device base layer and the first surface of the silicon carbide donor body to define a cleave plane within the silicon carbide donor body; arid

iv) cleaving an electronic device precursor from the siheon carbide donor body at the cleave plane and forming a remaining donor body, wherein the cleave plane forms a back surface of the electronic device precursor and the device base layer is a front surface of the electronic device precursor.

2. The method of claim 1 , wherein the silicon carbide donor body is. single crystal silicon carbide,

3. The method of claim 1 , wherein the silicon carbide donor body has a thickness of from about 100 microns to about 10 mm.

4. The method, of claim 3, wherein the thickness of the silicon carbide donor body is from about 500 microns to about 1. mm.

5. The method of claim 1 , wherein the device base layer comprises an epitaxial layer,

6. The method of claim 5, wherein the epitaxial layer comprises silicon carbide,

7. The method of claim 5, wherein the epitaxial layer has a thickness of from about 1 to about 100 microns.

8. The method of claim 7, wherein the thickness of the epitaxial layer is from about 5 to about 35 microns.

9. The method of claim 5, wherein the device base layer comprises at least one front end of line device component layer on the epitaxial layer.

10. The method of claim 9, wherein the front end of line device component layer comprises a transistor, a doped silicon carbide layer, a gate, or a gate oxide.

11. The method of claim 1, wherein, in the step of cleaving the electronic device precursor, the cleave plane further forms a top surface of the remaining donor body, and wherein the method further comprises the step of polishing the top surface to form a polished remaining donor body.

12. The method of claim 11, wherein the method further comprises repeating steps i)-iv) wherein the polished remaining donor body is the silicon carbide donor body in the repeated steps.

13. The method of claim 1, wherein the electronic device precursor is free standing.

14. The method of claim 1, wherein the electronic device precursor has a thickness of from about 5 microns to about 500 microns.

15. The method of claim 1, wherein the electronic device precursor comprises a silicon carbide lamina having a thickness of from about 2 microns to about 250 microns.

16. The method of claim 15, wherein the thickness of the lamina is from about 5 microns to about 100 microns.

17. The method of claim 16, wherein the thickness of the lamina is from about 10 microns to about 50 microns.

18. The method of claim 1, wherein the method further comprises the step of fabricating the electronic device with the electronic device precursor.

19. The method of claim 18, wherein the device base layer comprises an epitaxial layer, and wherein the step of fabricating the electronic device comprises forming at least one front end of line device component layer on the epitaxial layer.

20. The method of claim 19, wherein the step of fabricating the electronic device further comprises forming at least one back end of line device component layer on the front end of line device component layer.

21. The method of claim 18, wherein the device base layer comprises at least one front end of line device component layer on an epitaxial layer, and wherein the step of fabricating the electronic device comprises forming at least one back end of line component on the front end of line device component layer.

22. The method of claim 18, wherein the step of fabricating the electronic device comprises coupling the back surface of the electronic device precursor to a permanent carrier.

23. The method of claim 22, wherein the permanent carrier comprises silicon.

24. The method of claim 18, wherein the step of fabricating the electronic device comprises coupling the front surface of the electronic device precursor to a temporary carrier, coupling the back surface of the electronic device precursor to a permanent carrier, and subsequently decoupling the temporary carrier from the front surface of the electronic device precursor.

25. The method of claim 24, wherein the temporary carrier comprises glass or silicon

26. The method of claim 24, wherein the temporary carrier comprises a releasable adhesive, and the front surface of the electronic device precursor is coupled to the temporary carrier using the releasable adhesive.

27. The method of claim 24, wherein the front surface of the electronic device precursor is coupled to the temporary carrier using a vacuum force.

28. The method of claim 24, wherein the front surface of the electronic device precursor is coupled to the temporary carrier using an electrostatic force.

29. The method of claim 24, wherein the back surface of the electronic device precursor is polished after coupling the front surface of the electronic device precursor to the temporary carrier.

30. A method of preparing an electronic device comprising a silicon carbide lamina, the method comprising the steps of:

i) providing a silicon carbide donor body having a first surface;

ii) implanting ions through the first surface of the silicon carbide donor body below a threshold level to define a partial cleave plane within the silicon carbide donor body;

iii) forming a device base layer on the first surface of the silicon carbide donor body; and

iv) mechanically cleaving an electronic device precursor from the silicon carbide donor body at the partial cleave plane and forming a remaining donor body, wherein the partial cleave plane forms a back surface of the electronic device precursor and the device base layer is a front surface of the electronic device precursor.

31. The method of claim 30, wherein, after the step of implanting ions, the silicon carbide donor body is heat treated without causing cleaving at the partial cleave plane.

32. The method of claim 30, wherein the partial cleave plane will not thermally cleave at temperatures below 1600°C.

33. The method of claim 30, wherein the method further comprises the step of fabricating the electronic device on the electronic device precursor.

34. The method of claim 33, wherein the device base layer comprises an epitaxial layer, and wherein the step of fabricating the electronic device on the electronic device precursor comprises forming at least one front end of line device component layer on the epitaxial layer.

35. The method of claim 34, wherein the step of fabricating the electronic device on the electronic device precursor further comprises forming at least one back end of line device component layer on the front end of line device component layer.

36. The method of claim 33, wherein the device base layer comprises at least one front end of line device component layer on an epitaxial layer, and wherein the step of fabricating the electronic device on the electronic device precursor comprises forming at least one back end of line device component layer on the front end of line device component layer.

37. The method of claim 33, wherein the step of fabricating the electronic device on the electronic device precursor comprises coupling the back surface of the electronic device precursor to a permanent carrier.

38. A method of preparing an electronic device comprising a silicon carbide lamina, the method comprising the steps of:

i) providing a silicon carbide donor body having a first surface; ii) implanting ions through the first surface of the silicon carbide donor body to define a cleave plane within the silicon carbide donor body;

iii) cleaving a lamina from the silicon carbide donor body at the cleave plane, wherein the cleave plane forms a back surface of the lamina and the first surface of the silicon carbide donor body is a front surface of the lamina, and wherein the lamina is free standing and has a thickness of greater than or equal to 20 microns; and

iv) forming a device base layer on the front surface of the lamina to thereby form an electronic device precursor.

39. The method of claim 38, wherein the device base layer comprises an epitaxial layer.

40. The method of claim 39, wherein the device base layer comprises at least one front end of line device component layer on the epitaxial layer.

41. The method of claim 38, wherein the method further comprise the step of fabricating the electronic device on the electronic device precursor.

42. The method of claim 41, wherein the device base layer comprises an epitaxial layer, and wherein the step of fabricating the electronic device on the electronic device precursor comprises forming at least one front end of line device component layer on the epitaxial layer.

43. The method of claim 42, wherein the step of fabricating the electronic device on the electronic device precursor further comprises forming at least one back end of line device component layer on the front end of line device component layer.

44. The method of claim 41, wherein the device base layer comprises at least one front end of line device component layer on an epitaxial layer, and wherein the step of fabricating the electronic device on the electronic device precursor comprises forming at least one back end of line device component layer on the front end of line device component layer.

45. The method of claim 41, wherein the step of fabricating the electronic device on the electronic device precursor comprises coupling the back surface of the electronic device precursor to a permanent carrier.