WO2015135912A3 - Radiation source - Google Patents

Radiation source Download PDF

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Publication number
WO2015135912A3
WO2015135912A3 PCT/EP2015/054913 EP2015054913W WO2015135912A3 WO 2015135912 A3 WO2015135912 A3 WO 2015135912A3 EP 2015054913 W EP2015054913 W EP 2015054913W WO 2015135912 A3 WO2015135912 A3 WO 2015135912A3
Authority
WO
WIPO (PCT)
Prior art keywords
path
electron beam
operable
electron
along
Prior art date
Application number
PCT/EP2015/054913
Other languages
French (fr)
Other versions
WO2015135912A2 (en
Inventor
Erik Roelof Loopstra
Vadim Yevgenyevich Banine
Petrus Rutgerus BARTRAIJ
Rilpho Ludovicus DONKER
Johannes Antonius Gerardus AKKERMANS
Original Assignee
Asml Netherlands B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Publication of WO2015135912A2 publication Critical patent/WO2015135912A2/en
Publication of WO2015135912A3 publication Critical patent/WO2015135912A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/0903—Free-electron laser
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/04—Magnet systems, e.g. undulators, wigglers; Energisation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lasers (AREA)

Abstract

The present invention is concerned with a free electron laser. The free electron laser comprises an electron source operable to emit a beam of electrons, a particle accelerator operable to accelerate the beam of electrons to relativistic energies, an undulator operable to guide the relativistic electron beam along a periodic path so as to stimulate emission of coherent radiation and a steering unit operable to alter the trajectory of the electron beam so as to direct the electron beam from a first path along which the electron beam propagates substantially in a first direction to a second path along which the electron beam propagates substantially in a second direction, wherein the first path and the second path are vertically separated from one another.
PCT/EP2015/054913 2014-03-13 2015-03-10 Radiation source WO2015135912A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14159560.3 2014-03-13
EP14159560 2014-03-13

Publications (2)

Publication Number Publication Date
WO2015135912A2 WO2015135912A2 (en) 2015-09-17
WO2015135912A3 true WO2015135912A3 (en) 2015-11-12

Family

ID=50241301

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2015/054913 WO2015135912A2 (en) 2014-03-13 2015-03-10 Radiation source

Country Status (3)

Country Link
NL (1) NL2014430A (en)
TW (1) TW201539151A (en)
WO (1) WO2015135912A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017108348A1 (en) * 2015-12-23 2017-06-29 Asml Netherlands B.V. Free electron laser
JP6920311B2 (en) * 2016-03-07 2021-08-18 エーエスエムエル ネザーランズ ビー．ブイ． Electron source for free electron laser
DE102020102314B4 (en) * 2020-01-30 2022-02-10 Carl Zeiss Microscopy Gmbh Object receiving container, object holding system with an object receiving container, blasting device and device with an object receiving container or an object holding system, and methods for examining, analyzing and/or processing an object

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095486A (en) * 1989-07-27 1992-03-10 Commissariat A L'energie Atomique Free electron laser with improved electronic accelerator
US6498351B1 (en) * 1999-03-12 2002-12-24 Asml Netherlands B.V. Illumination system for shaping extreme ultraviolet radiation used in a lithographic projection apparatus
US20110042579A1 (en) * 2009-02-22 2011-02-24 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
DE102012212830A1 (en) * 2012-07-23 2014-01-23 Carl Zeiss Smt Gmbh EUV-light source

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095486A (en) * 1989-07-27 1992-03-10 Commissariat A L'energie Atomique Free electron laser with improved electronic accelerator
US6498351B1 (en) * 1999-03-12 2002-12-24 Asml Netherlands B.V. Illumination system for shaping extreme ultraviolet radiation used in a lithographic projection apparatus
US20110042579A1 (en) * 2009-02-22 2011-02-24 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
DE102012212830A1 (en) * 2012-07-23 2014-01-23 Carl Zeiss Smt Gmbh EUV-light source

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IMASAKI K ET AL: "Present status of FEL research in Japan", HIGH-POWER PARTICLE BEAMS, 1990 8TH INTERNATIONAL CONFERENCE ON, IEEE, 2 July 1990 (1990-07-02), pages 39 - 52, XP032292166, ISBN: 978-981-02-0545-4 *
JOHNSON E D ED - UNNO YOSHINOBU ET AL: "CONCEPTS FOR ULTRAVIOLET-FREE ELECTRON LASER OPTICS", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A: ACCELERATORS, SPECTROMETERS, DETECTORS, AND ASSOCIATED EQUIPMENT, ELSEVIER BV * NORTH-HOLLAND, NL, vol. 347, no. 1/03, 11 August 1994 (1994-08-11), pages 192 - 198, XP000462299, ISSN: 0168-9002, DOI: 10.1016/0168-9002(94)91877-5 *
NEWNAM B E ED - DRIGGERS RONALD G: "EXTREME ULTRAVIOLET FREE-ELECTRON LASER-BASED PROJECTION LITHOGRAPHY SYSTEMS", OPTICAL ENGINEERING, SOC. OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, BELLINGHAM, vol. 30, no. 8, 1 August 1991 (1991-08-01), pages 1100 - 1108, XP000222831, ISSN: 0091-3286, DOI: 10.1117/12.55914 *
RAMIAN G ET AL: "THE NEW UCSB COMPACT FAR-INFRARED FEL", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A: ACCELERATORS, SPECTROMETERS, DETECTORS, AND ASSOCIATED EQUIPMENT, ELSEVIER BV * NORTH-HOLLAND, NL, vol. 272, no. 1/02, 1 January 1988 (1988-01-01), pages 81 - 88, XP000022926, ISSN: 0168-9002, DOI: 10.1016/0168-9002(88)90199-4 *

Also Published As

Publication number Publication date
NL2014430A (en) 2015-11-02
TW201539151A (en) 2015-10-16
WO2015135912A2 (en) 2015-09-17

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