WO2015112214A3 - Magnetic shift register - Google Patents

Magnetic shift register Download PDF

Info

Publication number
WO2015112214A3
WO2015112214A3 PCT/US2014/063319 US2014063319W WO2015112214A3 WO 2015112214 A3 WO2015112214 A3 WO 2015112214A3 US 2014063319 W US2014063319 W US 2014063319W WO 2015112214 A3 WO2015112214 A3 WO 2015112214A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
bitcells
magnetic track
contacts
shift register
Prior art date
Application number
PCT/US2014/063319
Other languages
French (fr)
Other versions
WO2015112214A2 (en
WO2015112214A9 (en
Inventor
David M. BROMBERG
Lawrence Pileggi
Jian-Gang Zhu
Original Assignee
Carnegie Mellon University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carnegie Mellon University filed Critical Carnegie Mellon University
Publication of WO2015112214A2 publication Critical patent/WO2015112214A2/en
Publication of WO2015112214A9 publication Critical patent/WO2015112214A9/en
Publication of WO2015112214A3 publication Critical patent/WO2015112214A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell

Landscapes

  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

This disclosure relates to a memory device that includes at least one magnetic track on a substrate, wherein the at least one magnetic track comprises one or more magnetic domains. Contacts can be disposed on the at least one magnetic track according to a predetermined arrangement to form a plurality of bitcells on the at least one magnetic track, wherein each one of the plurality of bitcells is configured to store at least one magnetic domain. The device can include a timing circuit connected to the contacts, with the timing circuit being configured to apply to the contacts multiple phases of electric currents according to a predetermined timing sequence to cause the at least one magnetic domain to shift from the each one of the plurality of bitcells to an adjacent one of the plurality of bitcells on the at least one magnetic track.
PCT/US2014/063319 2013-11-01 2014-10-31 Magnetic shift register WO2015112214A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361962178P 2013-11-01 2013-11-01
US61/962,178 2013-11-01

Publications (3)

Publication Number Publication Date
WO2015112214A2 WO2015112214A2 (en) 2015-07-30
WO2015112214A9 WO2015112214A9 (en) 2015-08-27
WO2015112214A3 true WO2015112214A3 (en) 2015-11-26

Family

ID=53682088

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/063319 WO2015112214A2 (en) 2013-11-01 2014-10-31 Magnetic shift register

Country Status (1)

Country Link
WO (1) WO2015112214A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160372146A1 (en) 2013-11-01 2016-12-22 Carnegie Mellon University Magnetic Disk of a Data Storage Device with Tempered Growth of Magnetic Recording Layer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070030718A1 (en) * 2003-02-28 2007-02-08 Ingenia Technology Limited Magnetic logic system
US20100080034A1 (en) * 2008-09-26 2010-04-01 Industrial Technology Research Institute Magnetic shift register and operation method thereof
US20100208381A1 (en) * 2009-02-17 2010-08-19 Samsung Electronics Co., Ltd. Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
US20110090730A1 (en) * 2009-10-20 2011-04-21 Industrial Technology Research Institute Magnetic memory structure and operation method
US20130242647A1 (en) * 2012-03-16 2013-09-19 Kabushiki Kaisha Toshiba Magnetic memory

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070030718A1 (en) * 2003-02-28 2007-02-08 Ingenia Technology Limited Magnetic logic system
US20100080034A1 (en) * 2008-09-26 2010-04-01 Industrial Technology Research Institute Magnetic shift register and operation method thereof
US20100208381A1 (en) * 2009-02-17 2010-08-19 Samsung Electronics Co., Ltd. Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
US20110090730A1 (en) * 2009-10-20 2011-04-21 Industrial Technology Research Institute Magnetic memory structure and operation method
US20130242647A1 (en) * 2012-03-16 2013-09-19 Kabushiki Kaisha Toshiba Magnetic memory

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PARKIN: "Magnetic domain-wall ràcetrack memory.", SCIENCE 320.5873, vol. 320, no. 5873, 2008, pages 190 - 194., XP009137973, ISSN: 0036-8075, Retrieved from the Internet <URL:http://www.researchgate.net/profile/Masamitsu_Hayashi/publication/5448397_Magnetic_domain-wall_racetrack_memory/links/004635173f6a192c4c000000.pdf> *

Also Published As

Publication number Publication date
WO2015112214A2 (en) 2015-07-30
WO2015112214A9 (en) 2015-08-27

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