WO2015088208A1 - Substrat possédant une microstructure, procédé de fabrication associé, procédé d'affinage pour microstructure, procédé de fabrication pour réseau à microstructure, et appareil de fabrication associé - Google Patents

Substrat possédant une microstructure, procédé de fabrication associé, procédé d'affinage pour microstructure, procédé de fabrication pour réseau à microstructure, et appareil de fabrication associé Download PDF

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Publication number
WO2015088208A1
WO2015088208A1 PCT/KR2014/011989 KR2014011989W WO2015088208A1 WO 2015088208 A1 WO2015088208 A1 WO 2015088208A1 KR 2014011989 W KR2014011989 W KR 2014011989W WO 2015088208 A1 WO2015088208 A1 WO 2015088208A1
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WO
WIPO (PCT)
Prior art keywords
substrate
point
microstructure
structures
base
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Application number
PCT/KR2014/011989
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English (en)
Korean (ko)
Inventor
김태환
추동철
이준규
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from KR1020140074672A external-priority patent/KR101506425B1/ko
Priority claimed from KR1020140097710A external-priority patent/KR101518675B1/ko
Priority claimed from KR1020140170362A external-priority patent/KR101627050B1/ko
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Priority to US15/102,831 priority Critical patent/US10166571B2/en
Publication of WO2015088208A1 publication Critical patent/WO2015088208A1/fr
Priority to US16/200,430 priority patent/US11141890B2/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Definitions

  • This invention relates to the board
  • Micro / nano structures from several nm to hundreds of nm in size, manipulate and control materials on the nanoscale, so that new physical and chemical properties can be expected from existing materials, limiting the limitations of existing materials. It is attracting attention as the next generation material that can be overcome.
  • micro / nanostructures are key new materials that provide a foundation on which technologies in various fields, such as organic light emitting devices, liquid crystal displays, touch panels, or solar cells, can be used.
  • micro / nano structures are manufactured in various sizes by chemical methods, and the micro / nano structures are coated on a substrate using bar coating, spray coating, spin coating, brush coating, dip coating, gravure coating, and the like.
  • bar coating, spray coating, spin coating, brush coating, dip coating, gravure coating, and the like Many techniques have been developed for producing micro / nano structure substrates with excellent properties.
  • Korean Patent Publication No. 10-2013-0037483 discloses a one-dimensional conductive nanomaterial comprising any one selected from carbon nanotubes, metal nanowires, and metal nanorods on a substrate.
  • a method of manufacturing a conductive film is disclosed by forming a two-dimensional nanomaterial including any one selected from graphene, boron nitride, tungsten oxide, and the like on the upper surface of the one-dimensional conductive nanomaterial.
  • micro / nano structures having different sizes are used for transparent electrodes or the like, there is a problem of reducing conductivity and transmittance and increasing haze. Accordingly, various techniques have been developed for manufacturing micro / nano structures having uniform sizes.
  • Korean Patent Laid-Open Publication No. 10-2013-0072956 (Application No. 10-2011-0140589) discloses a method of forming metal nanowires by passing a reaction solution through a filter having a pore size of 5 to 10 ⁇ m. have.
  • One technical problem to be solved by the present invention is to provide a substrate having a microstructure, the surface roughness is minimized and a method of manufacturing the same.
  • Another technical problem to be solved by the present invention is to provide a substrate having a highly reliable microstructure and a method of manufacturing the same.
  • Another technical problem to be solved by the present invention is to provide a substrate having a flexible microstructure and a method of manufacturing the same.
  • Another technical problem to be solved by the present invention is to provide a transparent and conductive substrate having a microstructure and a method of manufacturing the same.
  • One technical problem to be solved by the present invention is to provide a method and a purification apparatus for purifying a highly reliable microstructure.
  • Another technical problem to be solved by the present invention is to provide a method for purifying a microstructure and a purifying apparatus having substantially the same size.
  • Another technical problem to be solved by the present invention is to provide a method for purifying a microstructure and a purification apparatus with a simplified manufacturing process.
  • Another technical problem to be solved by the present invention is to provide a method for purifying a microstructure and a purifying apparatus capable of improving production yield.
  • Another technical problem to be solved by the present invention is to provide a method for purifying a microstructure and a purification apparatus capable of a continuous process.
  • One technical problem to be solved by the present invention is to provide a method for manufacturing a microstructure network and an apparatus for manufacturing the same, which can substantially make sheet resistance uniform.
  • Another technical problem to be solved by the present invention is to provide a method for manufacturing a microstructure network with minimized resistance and a manufacturing apparatus thereof.
  • Another technical problem to be solved by the present invention is to provide a method for manufacturing a microstructure and a device for minimizing damage to the substrate.
  • the technical problem to be solved by the present invention is not limited to the above.
  • the present invention provides a method for producing a substrate having a fine structure.
  • the method of manufacturing a substrate having the microstructures may include forming a microstructure on an upper surface of an auxiliary substrate, coating a base solution on the microstructure, and the base solution. Heat treating the substrate to form a base substrate covering the microstructure, and removing the auxiliary substrate from the base substrate.
  • At least a portion of the microstructure may include melting and bonding to each other.
  • a gap exists between the microstructure and the auxiliary substrate, and the base solution may include filling the gap.
  • the microstructure may include being disposed in the base substrate.
  • the method of manufacturing a substrate having the microstructure may include performing a pretreatment process of reducing surface energy of the upper surface of the auxiliary substrate before forming the microstructure on the auxiliary substrate. It may further include.
  • the method of manufacturing a substrate having the microstructure may include heat treating the auxiliary substrate on which the microstructure is formed before coating the base solution, and after removing the auxiliary substrate, At least one of the step of heat treatment may be further included.
  • the method of manufacturing a substrate having the microstructure further includes forming a release layer on the upper surface of the auxiliary substrate before forming the microstructure, wherein the microstructure is Formed on the release layer, and separating the auxiliary substrate from the base substrate may include removing the release layer.
  • the auxiliary substrate may be removed from the base substrate to expose a main surface of the base substrate adjacent to the upper surface of the auxiliary substrate.
  • the main surface of the base substrate may include a portion composed of the microstructure and a portion composed of the base substrate.
  • the method of manufacturing a substrate having the microstructure may further include forming a conductive film on the main surface of the base substrate.
  • the present invention provides a method for manufacturing an electronic device.
  • the method of manufacturing the electronic device may further include manufacturing a substrate having the microstructure and forming a semiconductor device on the main surface of the base substrate, according to the above-described embodiments. It may include.
  • the present invention provides a substrate having a fine structure.
  • the substrate having the microstructure includes a base substrate having a flat main surface, and a microstructure disposed inside the base substrate adjacent to the main surface, wherein The main surface may include a first portion composed of the base substrate and a second portion composed of the microstructure.
  • the base substrate includes an opposite surface opposite to the main surface, and the microstructures are disposed in the base substrate, and are located relatively closer to the main surface than the opposite surface. can do.
  • the microstructure includes an exposed portion constituting the main surface, and a dent portion located below the main surface, wherein the recessed portion, It may include covering with the first portion.
  • the present invention provides a method for purifying a microstructure.
  • the method for purifying a microstructure preparing a mixed solution containing structures having different masses, providing the mixed solution on a substrate, the substrate having the structures on the substrate Spreading the mixed liquid, collecting a portion of the mixed liquid diffused on the substrate, and collecting the structures included in the portion of the mixed liquid collected from the portion of the mixed liquid collected. Recovering may be included.
  • the structures may include silver nano structures.
  • the substrate may include an incline with respect to the ground.
  • the portion of the mixed liquid collected may include a position within a predetermined distance from a position where the mixed liquid is provided to the substrate.
  • the collecting of the portion of the mixed liquid may include removing a portion other than the portion of the mixed liquid diffused on the substrate, and collecting the portion of the remaining mixed liquid. It may include.
  • the spreading of the mixed solution may include drying the mixed solution, and collecting the portion of the mixed solution may include collecting the dried portion of the mixed solution. .
  • the collecting of the portion of the mixed liquid may include providing a solution on the substrate to dissolve the portion of the dried mixed liquid.
  • recovering the structures may include recovering the structures from the solution in which the portion of the mixed solution is dissolved using a centrifuge.
  • the method for purifying the microstructure may further include forming a release layer on the substrate before providing the mixed solution on the substrate.
  • the release layer may include being dissolved by the solution.
  • the method for purifying the microstructure may further include performing a pretreatment process to reduce the surface energy of the surface of the substrate before providing the mixed solution on the substrate.
  • the present invention provides a device for purifying a microstructure.
  • the apparatus for purifying microstructures may include a substrate having an upper surface inclined with respect to the ground, and a mixed liquid having structures having different masses from the substrate.
  • the apparatus for purifying the microstructure may further include an inclination angle adjusting unit configured to adjust an inclination angle of the upper surface and the ground of the substrate.
  • the apparatus for purifying the microstructure may further include a substrate pretreatment providing unit configured to provide a plasma to the upper surface of the substrate.
  • the mixed liquid supply unit may include providing the mixed liquid having the structures to a portion of the upper surface of the substrate located at a relatively high position from the ground.
  • the substrate may be provided in plurality, and upper surfaces of the plurality of substrates may be inclined with respect to the ground, and portions of the upper surfaces of the plurality of substrates that are positioned relatively high from the ground may be different from each other. It may include disposed adjacently.
  • an area of the upper surfaces of the plurality of substrates may include a wider area adjacent to the ground.
  • the present invention provides a method for manufacturing a microstructure network.
  • the method of manufacturing a microstructure network may include forming a base layer having conductive structures on a substrate, between a first point of the base layer and a second point spaced apart from the first point. Applying a current to the to form a first network in which the first point and the second point are electrically connected by the structures, and a third point of the base film and a fourth spaced apart from the third point Applying a current between the points to form a second network in which the third point and the fourth point are electrically connected by the structures.
  • the structures may include silver nano structures.
  • At least some of the structures may be bonded to each other by a current applied between the first point and the second point and a current applied between the third point and the fourth point. Can be.
  • the first to fourth points may include an edge of the base layer.
  • the current applied between the first point and the second point and the current applied between the third point and the fourth point may include different current paths. have.
  • the path of the human current between the first point and the second point corresponds to the first network
  • the present invention provides a microstructure network manufacturing apparatus.
  • the microstructure network manufacturing apparatus may include a support rod extending in a first direction and connecting one end of the first electrode and the second electrode spaced apart from each other, and one end of the first electrode and the second electrode. ), A rotation rod connected to the support rod by rotating the first direction, and a current is applied between the first electrode and the second electrode to rotate the rotation rod, and the rotation rod It may include a control unit for applying a current between the first electrode and the second electrode after rotating.
  • the distance between the first electrode and the second electrode may be kept constant.
  • the first electrode and the second electrode are in contact with a first point of a base film having conductive structures and a second point spaced apart from the first point, respectively.
  • a current is applied between the two electrodes, and the first electrode and the second electrode are rotated by the rotating rod so that the first electrode and the second electrode are respectively the third point and the third point of the base film.
  • a current may be applied between the first electrode and the second electrode.
  • the apparatus for manufacturing a microstructure network may include a support structure, a plurality of electrodes arranged adjacent to an edge of the support structure, and a current between first and second electrodes selected from the plurality of electrodes. After applying a current, and applying a current between the first and second electrodes, the current between the third and fourth electrodes selected from the remaining electrodes except for the first and second electrodes of the plurality of electrodes It may include a control unit for applying a.
  • the first and second electrodes, and the third and fourth electrodes in a state where the plurality of electrodes including the first to fourth electrodes are in contact with the base film having conductive structures may include applying a current between them.
  • the support structure, the first side (first side) to the fourth side, the plurality of electrodes are arranged along the first to the fourth side, respectively, the first to fourth Each of the electrodes arranged along the side may include configuring the first to fourth groups.
  • the first electrode and the second electrode may be included in different groups, and the third to fourth electrodes may be included in different groups.
  • a base solution is coated on a microstructure formed on an auxiliary substrate, and the base solution is heat-treated to form a base substrate.
  • the auxiliary substrate is removed from the base substrate to expose the main surface of the base substrate adjacent to the auxiliary substrate.
  • the main surface of the base substrate has a portion composed of the microstructure, and may be substantially flat. Accordingly, a substrate having a microstructure with a small surface roughness can be provided.
  • the purification chamber and the purification apparatus of a microstructure after providing a mixed solution containing structures having different masses and / or sizes on a substrate to spread (spread), By collecting only a portion within a range of distance from a given location, structures having substantially the same mass and / or size as each other from the portion of the mixed liquid collected can be purified.
  • a method of manufacturing a microstructure network by providing a plurality of different current paths to the base film disposed on a substrate and having conductive structures, the structures are electrically connected Multiple networks may be formed.
  • a method of manufacturing a microstructure network can be provided that minimizes damage to the substrate, minimizes resistance of the base film, and has a substantially uniform sheet resistance.
  • FIG. 1 is a flowchart illustrating a method of manufacturing a substrate having a microstructure according to an embodiment of the present invention.
  • FIGS. 2A to 2F are diagrams for describing a substrate having a microstructure and a method of manufacturing the same, according to an embodiment of the present invention.
  • 3A and 3B are views for explaining a modified example of the metal nanowire substrate and the manufacturing method thereof according to the embodiment of the present invention.
  • FIG. 4 is a SEM photograph of a substrate having a microstructure according to an embodiment of the present invention.
  • FIG. 5 is a graph illustrating the transmittance of a substrate having a microstructure according to an embodiment of the present invention.
  • FIG. 6 is an atomic force microscopy photograph for explaining the surface roughness of the substrate having a microstructure according to an embodiment of the present invention.
  • FIG. 7 to 11 are views for explaining a method for purifying a microstructure according to an embodiment of the present invention.
  • FIG. 12 is a flowchart illustrating a method for purifying a microstructure according to an embodiment of the present invention.
  • FIG. 13 to 15 are views for explaining a method for purifying a microstructure according to another embodiment of the present invention.
  • 16 is a view for explaining a purification apparatus of a microstructure according to an embodiment of the present invention.
  • 17 is a view for explaining the purification apparatus of a microstructure according to another embodiment of the present invention.
  • FIG. 18 is a view for explaining a purification apparatus of a microstructure according to another embodiment of the present invention.
  • FIG. 19 is a micrograph of a diffusion experiment of structures according to a method of purifying a microstructure according to an embodiment of the present invention.
  • 20 is a flowchart illustrating a method for manufacturing a microstructure network according to an embodiment of the present invention.
  • 21 to 23 are perspective views illustrating a method for manufacturing a microstructure network according to an embodiment of the present invention.
  • FIG. 24 is a view for explaining a network formed between the contacts of the structure according to the method for manufacturing a microstructure network according to an embodiment of the present invention.
  • FIG. 25 illustrates an apparatus for manufacturing a microstructure network, according to an exemplary embodiment.
  • 26 to 27 are for explaining an apparatus for manufacturing a microstructure network according to another embodiment of the present invention.
  • first, second, and third are used to describe various components, but these components should not be limited by these terms. These terms are only used to distinguish one component from another. Thus, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment.
  • first component in one embodiment may be referred to as a second component in another embodiment.
  • second component in another embodiment.
  • Each embodiment described and illustrated herein also includes its complementary embodiment.
  • the term 'and / or' is used herein to include at least one of the components listed before and after.
  • connection is used herein to mean both indirectly connecting a plurality of components, and directly connecting.
  • microstructures used herein may be micro or nano, including wires, rods, fibers, wires, flakes, particles, and the like. It is used in the sense to include a fine structure having a size.
  • a substrate having a microstructure and an manufacturing method thereof according to an embodiment of the present invention are described.
  • FIGS. 2A to 2F illustrate a substrate having a microstructure according to an embodiment of the present invention, and a manufacturing method thereof. Drawings for the following.
  • an auxiliary substrate 100 is prepared.
  • the auxiliary substrate 100 may have a flat upper surface.
  • the auxiliary substrate 100 may be a flexible substrate.
  • the auxiliary substrate 100 may be any one of a glass substrate, a silicon semiconductor substrate, a compound semiconductor substrate, or a polymer substrate.
  • the auxiliary substrate 100 may be any one of a PET substrate, a PC substrate, a PEN substrate, a PMMA substrate, a PU substrate, or a PI substrate. remind
  • the release layer 110 may be formed on the auxiliary substrate 100.
  • the release layer 110 may be for easily removing the auxiliary substrate 100 from the base substrate, which will be described later.
  • the release layer 110 may be formed using a silicon-based release agent or a fluorine-based release agent. .
  • microstructures 120 may be formed on the upper surface of the auxiliary substrate 100 (S110).
  • the microstructures 120 may be formed of a conductive material.
  • the microstructures 120 may be silver (Ag) nanowires.
  • the microstructures 120 may include bar coating, spin coating, spray coating, dip coating, brush coating or gravure coating. It can be formed by the method.
  • a pretreatment process may be performed to reduce the surface energy of the top surface of the release layer 110.
  • plasma treatment with a gas such as oxygen, argon, nitrogen, or hydrogen may be performed, or UV and ozone treatment may be performed.
  • the auxiliary substrate 100 on which the microstructures 120 are formed is removed.
  • the auxiliary substrate 100 may be dried at a temperature of 60 ⁇ 80 °C.
  • a heat treatment process may be performed.
  • conductivity of the microstructures 120 may be improved.
  • the heat treatment process may be performed at 160 ⁇ 180 °C.
  • the process of forming the release layer 110 is omitted between the microstructures 120 and the release layer 110, or the gap 120a is formed between the microstructures 120 and the auxiliary substrate 100. ) May be present.
  • a base solution 130 may be coated on the microstructures 120 (S120).
  • the base solution 130 may be in a solution state including a material of a flexible substrate.
  • the base solution 130 may include at least one of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyether sulfone (PES), polyimide (PI), PMMA (poly (methylmethacrylate)) or acrylite. It may include any one.
  • the base solution 130 may be a variety of materials such as bar coating, spin coating, spray coating, dip coating, brush coating or gravure coating. It can be formed by the method.
  • the microstructures 120 may be patterned before the base solution 130 is coated on the microstructures 120.
  • the base solution 130 may be heat treated to cure the base solution 130, and a base substrate 132 may be formed to cover the microstructures 120 (S130).
  • the base solution 130 may be heat-treated at 70 ⁇ 300 °C. More specifically, for example, when the base solution 130 is a PMMA solution, the base solution 130 may be heat treated at 80 to 100 ° C.
  • the microstructures 120 may be melted. As a result, portions of the microstructures 120 that are adjacent to each other may be bonded to each other (120b). Accordingly, the resistance of the microstructures 120 may be reduced.
  • the auxiliary substrate 100 and the release layer 110 may be removed from the base substrate 132.
  • S140 The auxiliary substrate 100 and the release layer 110 may be removed.
  • the main surface MS of the base substrate 132 may be a surface adjacent to the upper surface of the auxiliary substrate 100.
  • the main surface MS may be a surface which is in contact with the release layer 110 or the auxiliary substrate 100 before the auxiliary substrate 100 and the release layer 110 are removed.
  • the base substrate 132 may include an opposite surface opposite to the main surface MS.
  • the base solution 130 is provided in the liquid state on the microstructures 120.
  • the base solution 130 in the liquid state may be formed between the auxiliary layer 100 and the auxiliary layer 110 and the microstructures 120, or when the process of forming the release layer 110 is omitted.
  • the gaps 120a between the microstructures 120 may be easily filled.
  • the main surface MS of the base substrate 132 converted into a solid state by heat treatment of the base solution 130 may be flat.
  • the exposed main surface MS may include a first portion MS1 composed of the base substrate 132 and a second portion MS2 composed of the microstructures 120.
  • the first portion MS1 and the second portion MS2 may form a flat integral surface.
  • a portion of the base substrate 132 constituting the first portion MS1 may be generated by heat treatment of the base solution 130 filling the void 120a.
  • At least some of the microstructures 120 may include an exposed portion (EP) and a dent portion (DP).
  • the exposed part EP may constitute the second part MS2 of the main surface MS.
  • the depression DP may be located below the first portion MS1 of the main surface MS.
  • the microstructures 120 may be located in the base substrate 132, but may be located relatively closer to the main surface MS than the opposite surface.
  • Removing the auxiliary substrate 100 and the release layer 110 may include separating the auxiliary substrate 100 from the release layer 110 and the base substrate 132, and the release layer 110. ) May be dissolved in a solvent to remove it from the base substrate 132. Alternatively, the release layer 110 and the auxiliary substrate 100 may be temporarily removed from the base substrate 132.
  • the base substrate 132 may be heat treated.
  • the bonding of the microstructures 120 weakened in the process of forming the base substrate 132 by heat treating the base solution 130 may be strengthened.
  • the conductive thin film 140 may include a conductive polymer (eg, PEDOT: PSS).
  • the base substrate 132 is formed by heat-treating the base solution 130 in a liquid state on the microstructures 120 formed on the auxiliary substrate 100. Accordingly, the main surface MS of the base substrate 132 contacting the auxiliary substrate 100 or the release layer 110 may be flat even though the main surface MS has a portion formed of the microstructures 120. Can be. Accordingly, deterioration of characteristics of semiconductor devices, such as a thin film transistor and an organic light emitting device, formed on the main surface MS of the base substrate 132 may be prevented.
  • the surface of the substrate has a surface roughness of several hundred nm. Even if the organic / inorganic thin film is formed on the surface of the substrate on which the metal nanowires are formed, it has a surface roughness of about 100 nm or more.
  • the semiconductor device is formed on the surface of the substrate having high surface roughness, the characteristics of the semiconductor device may be degraded. For example, when the organic light emitting device is formed on the surface of the substrate, nonuniformity of an internal electric field or short circuit between the positive electrode and the negative electrode may occur. As a result, internal degradation of the organic light emitting diode may be induced, thereby reducing the lifespan of the organic light emitting diode.
  • semiconductor devices may be formed on the substrate having the microstructures 120 and at the same time having the main surface MS in a flat state. The deterioration of the characteristics can be minimized.
  • micromaterials may be formed on the auxiliary substrate 100. This will be described below with reference to FIGS. 3A and 3B.
  • 3A and 3B are views for explaining a modified example of the metal nanowire substrate and the manufacturing method thereof according to the embodiment of the present invention.
  • the auxiliary substrate 100 and the release layer 110 on the auxiliary substrate 100 are provided as described with reference to FIG. 2A.
  • the microstructures 120 and the nano material 122 may be formed on the release layer 110.
  • the connection of the microstructures 120 may be enhanced, and the degree of dispersion of the microstructures 120 may be improved.
  • the nanomaterial 122 is formed on the auxiliary substrate 100 before the microstructures 120 are formed on the auxiliary substrate 100 as described with reference to FIG. 2B.
  • the microstructures 120 may be formed after the nanomaterial 122 is formed.
  • the nano Material 122 may be formed on the auxiliary substrate 100.
  • the nanomaterial 122 may include a material different from the microstructures 120.
  • the nanomaterial 122 may include at least one of graphene flake, single wall CNT, double wall CNT, multiwall CNT, C 60 , C 85 , or C 70 .
  • the nanomaterial 122 may be formed on the auxiliary substrate 100 together with a conductive organic material.
  • the conductive organic material may include at least one of PEDOT: PSS, or PVP.
  • the base solution 130 is formed on the auxiliary substrate 100 as described with reference to FIG. 2C. Can be coated on. After the base solution 130 is coated, as described with reference to FIG. 2D, the base solution 130 may be heat-treated to form the base substrate 132. The base substrate 132 may cover the microstructures 120 and the nanomaterial 122.
  • the auxiliary substrate 100 and the release layer 110 may be removed from the base substrate 132.
  • the main surface MS of the base substrate 132 that is in contact with the release layer 110 (the main surface that is in contact with the auxiliary substrate 100 when the release layer 110 is omitted) may be exposed.
  • the exposed main surface MS may include a first portion MS1 composed of the base substrate 132, a second portion MS2 composed of the microstructures 120, and the nanomaterial 122. It may include a third portion (MS3) consisting of.
  • the first portion MS1, the second portion MS2, and the third surface MS3 may form a flat integral surface.
  • a conductive thin film may be further formed on the main surface MS of the base substrate 132.
  • the nanomaterial ( 122 may be formed to improve bonding and dispersion of the microstructures 120.
  • FIG. 4 is a SEM photograph of a substrate having a microstructure according to an embodiment of the present invention.
  • FIG. 4 silver nanowires were formed by a bar-coating method on the auxiliary substrate, and PMMA was formed by a drop-casting method on the silver nanowires.
  • 4A is a planar image of a PMMA substrate including silver nanowires
  • FIG. 4B is an inclined plane image of PMMA including silver nanowires.
  • FIG. 5 is a graph illustrating the transmittance of a substrate having a microstructure according to an embodiment of the present invention.
  • PEDOT: PSS the transmittances of PEDOT: PSS, silver nanowires, and silver nanowires and PEDOT: PSS, which are conductive polymers used as the hole injection layer, were measured.
  • the transmittance of PEDOT: PSS was measured to be the highest, and the transmittance of PEDOT: PSS laminated on the silver nanowire was measured to be the lowest.
  • FIG. 6 is an atomic force microscopy photograph for explaining the surface roughness of the substrate having a microstructure according to an embodiment of the present invention.
  • silver nanowires are formed on a glass substrate, a PMMA solution is coated on the silver nanowires, and then heat-treated to form a PMMA substrate, and PMMA having silver nanowires.
  • the surface was measured by atomic force microscopy after coating PEDOT: PSS.
  • PEDOT: PSS on the silver nanowires
  • the surface was measured by an atomic force microscope.
  • (A) and (b) are atoms of silver nanowires formed on a glass substrate and surfaces of silver nanowires and PEDOT: PSS laminated on the glass substrate, respectively, according to the comparative example of the present invention described above. It is a force micrograph. 6 (c) and 6 (d) are surfaces of PEDOT: PSS laminated on a PMMA substrate having silver nanowires and silver nanowires transferred to a PMMA substrate, respectively, according to the embodiment of the present invention described above. Atomic force micrograph.
  • the peak-to-valley surface roughness of the silver nanowires formed on the glass substrate was about 210 nm.
  • the surface roughness was measured to be about 2 to 3 times higher than the silver nanowire thickness of 80 nm.
  • the peak-to valley surface roughness was reduced to about 1/4 to 50 nm, but still It was measured to have a large value.
  • the PMMA solution is provided on the silver nanowires disposed on the glass substrate, followed by heat treatment to form a PMMA film, and after removing the glass substrate, coating the PMMA film having the silver nanowires with PEDOT: PSS. , It can be seen that it is an effective method of minimizing the surface roughness of the substrate having the silver nanowires.
  • a method for purifying a microstructure and a purifying apparatus according to an embodiment of the present invention are described.
  • FIG. 7 to 11 are views for explaining a method for purifying a microstructure according to an embodiment of the present invention
  • Figure 12 is a flow chart for explaining a method for purifying a microstructure according to an embodiment of the present invention.
  • the substrate 200 may be a semiconductor substrate, a plastic substrate, and / or a glass substrate.
  • the substrate 200 may be flexible.
  • the substrate 200 may be pretreatment 210.
  • the substrate 200 may be pretreated 210 to reduce surface energy of the substrate.
  • pretreatment 210 of the substrate 200 may provide at least one of plasma, UV, or ozone to the upper surface of the substrate 200. It may include doing.
  • a plasma using oxygen (O), argon (Ar), nitrogen (N), or hydrogen (H) gas may be provided on the upper surface of the substrate 200.
  • a release layer 220 may be coated on the upper surface of the substrate 200. As described later, the release layer 220 is for easily separating the mixed solution including the structures formed on the release layer 220 from the substrate 200.
  • the release layer 220 may be coated by any one of a bar coating, a spray coating, a brush coating, or a gravure coating.
  • the release layer 220 may include a polymer material.
  • the release layer 220 may be formed of at least one of polymethylmethacrylate, polyvinylpyrrolidone, polyethylene terephtahlate, polystyrene, polyvinylchloride, polycarbonate, or polyimide.
  • the release layer 220 may include a composite of an inorganic material with the above-described polymer material.
  • the inorganic material may include at least one of Au, Si, Ag, Cu, Ni, Al, Sn, C, SiO 2 , ZnO, Al 2 O 3 , In 2 O 3 , or SnO 2 . Can be.
  • the release layer 220 may be heat treated or plasma treated 230. For this reason, the mixed solution including the structures on the release layer 220 can be easily spread (spread).
  • a mixed solution 240 having structures 242 having different masses is prepared (S210).
  • the structures 242 may be silver nano structures such as silver nanoparticles and silver nanowires.
  • the structures 242 may be made of an inorganic material (eg, graphene flake, single wall CNT, double wall CNT, multiwall CNT, C 60 , C 85 , C 70, etc.), metal Nanoparticles (eg, Au, Ag, Cu, Ni, Al, etc.), semiconductor materials (eg, Si, C, GaAs, ZnSe, InP, CdS, etc.), oxide semiconductor materials (SiO2, ZnO, Al2O3, In2O3, SnO2, etc.), a semiconductor quantum dot material in the form of a core / shell (for example, CdSe / CdSe, CdSe / ZnTe, ZnSe / ZnS, PbS / CdS, ZnS / CdSe, CdS / ZnS, etc.), or It may include at least one of a semiconductor nanowire material (for example, ZnO / ZnS, AlP / AlN
  • the mixed liquid 240 having the structures 242 is provided on the upper surface of the substrate 200, and on the release layer 220, the mixed liquid 240 having the structures 242. This may be spread (S220). According to one embodiment, the mixed solution 240 may be provided on the substrate 200 so as not to cover the entire upper surface of the release layer 220. For example, when providing a mixed liquid on a substrate of 25 ⁇ 25 mm 2 area, about 10-15 ⁇ l of mixed liquid may be provided.
  • the structures 242 included in the mixed solution 240 provided on the substrate 200 are higher than those of the structures 242 having a relatively large mass.
  • the mixed liquid 240 may diffuse farther from the position 240P provided on the substrate 200. In other words, the closer the mixed solution 240 is to the position 240P provided on the substrate 200, the greater the mass and / or size of the structures 242, and the mixed solution 240 is the substrate 200. The farther from the location 240P provided at), the smaller the mass and / or size of the structures 242 can be.
  • the mixture liquid 240 is of a length relative to an area adjacent to the location 240P provided on the substrate 200.
  • a long silver nanowire may be disposed, and a silver nanowire having a short length or silver nanoparticles may be disposed in a region far from a location 240P where the mixed liquid 240 is provided on the substrate 200.
  • the mixed liquid 240 is provided on the substrate 200, the spreading of the mixed liquid 240 may include the step of drying the mixed liquid 240 .
  • the mixed liquid 240 is disposed.
  • the mixed solution 240 may be dried by applying heat to the mixed solution 240.
  • a portion of the mixed liquid 240 spread on the substrate 200 may be collected (S230).
  • the portion of the mixed liquid 240 to be collected may be located within a predetermined distance range D1 to D2 from the position 240P provided with the mixed liquid 240 on the substrate 200.
  • the portion of the mixed liquid 240 located within a predetermined distance range (D1 ⁇ D2) from the position 240P at which the mixed liquid 240 is provided on the substrate 200 It may have a donut shape.
  • the structures 242 included in the portion of the remaining mixed solution 240 may have the same mass and / or size as each other.
  • the mixed liquid 240 is located outside a predetermined distance range D1 to D2 from the position 240P provided with the mixed liquid 240 on the substrate 200.
  • the remaining portion of may include removing, and collecting the remaining portion of the mixed solution 240 remaining.
  • the remaining portion of the mixed solution 240 may be removed by a physical method.
  • the structures 242 included in the portion of the mixed liquid 240 may be recovered (S240). Recovering the structures 242 from the portion of the mixed liquid 240, a solution for dissolving the portion of the mixed liquid 240 and the release layer 220 remaining on the substrate 200. Providing 250 and recovering the structures 242 from the solution 250 comprising the structures 242 contained in the portion of the mixed liquid 240 remaining. Can be. According to an embodiment, recovering the structures 242 may include recovering the structures 242 from the solution 250 in which the portion of the mixed solution 240 is dissolved using a centrifuge. It may include.
  • the mixed solution collected Structures having masses and / or sizes substantially equal to each other from the above portion of can be purified in a simplified process.
  • the structures may be deformed or cut.
  • a method for purifying microstructures can be provided in which deformation and cutting are minimized to improve production yield.
  • the mixed liquid is provided on a substrate having an upper surface parallel to the ground.
  • the upper surface of the substrate on which the mixed liquid is provided is inclined with the ground. It may be in an inclined state. This will be described with reference to FIGS. 13 to 15.
  • FIG. 13 to 15 are views for explaining a method for purifying a microstructure according to another embodiment of the present invention.
  • the substrate 205 may be a substrate of the same type as the substrate 200 described with reference to FIG. 7.
  • the substrate 205 may extend in a direction adjacent to the ground.
  • the support 201 By the support 201, the upper surface 104 of the substrate 205 may be inclined with respect to the ground, not parallel to the ground.
  • the support 201 and the substrate 205 are illustrated and described as being in separate configurations, but the support 201 and the substrate 205 may form one body.
  • the upper surface 104 of the substrate 205 is pretreatment using at least one of plasma, UV, or ozone, as described with reference to FIG. 7.
  • a release layer 222 may be formed on the substrate 205.
  • the thickness of the release layer 222 is conformal, so that the top surface of the release layer 222 is also inclined with respect to the ground, similarly to the top surface 104 of the substrate 205. Can be.
  • the release layer 222 may extend in a direction adjacent to the ground.
  • the release layer 222 may be formed by the method described with reference to FIG. 8.
  • a mixed liquid 240 having structures may be prepared as described with reference to FIG. 9.
  • the mixed liquid 240 may be provided on the upper surface of the release layer 222 inclined with respect to the ground.
  • the location 240P at which the mixed liquid 240 is provided on the substrate 205 may be located at a relatively high position with respect to the ground. For this reason, the mixed liquid 240 may be spread on the release layer 222 toward the ground. Since the mixed liquid 240 is provided on the upper surface of the release layer 222 inclined with respect to the ground / the upper surface of the substrate 205, the mixed liquid 240 can be easily spread. have.
  • the diffusing of the mixed solution 240 may include drying the mixed solution 240, as described with reference to FIG. 9.
  • the structures having a relatively low mass may be formed by the mixed liquid 240 having the substrate rather than the structures having a relatively large mass. From the location 240P provided on 205, it may spread farther. That is, the structures having a relatively small mass and / or size may be disposed at a position adjacent to the ground, and the structures having a relatively large mass and / or size may be disposed at a position far from the ground.
  • a portion of the mixed liquid 240 located within a predetermined distance range from the position 240P provided on the substrate 205. 240A) can be collected from which the structures having substantially the same mass and / or size can be purified.
  • FIGS. 16 to 18 An apparatus for purifying a microstructure to which the method for purifying a microstructure according to the embodiment of the present invention described above is applied is described with reference to FIGS. 16 to 18.
  • 16 is a view for explaining a purification apparatus of a microstructure according to an embodiment of the present invention.
  • the apparatus for purifying a microstructure may include a substrate 205, a mixed liquid supply unit 310, a substrate pretreatment providing unit 320, and an inclination angle adjusting unit 330.
  • a substrate 205 may include a substrate 205, a mixed liquid supply unit 310, a substrate pretreatment providing unit 320, and an inclination angle adjusting unit 330.
  • a mixed liquid supply unit 310 may include a substrate 205, a mixed liquid supply unit 310, a substrate pretreatment providing unit 320, and an inclination angle adjusting unit 330.
  • the substrate 205 may have an upper surface inclined with respect to the ground, as described with reference to FIG. 13.
  • the substrate 205 may be supported by the support 202.
  • the support 202 and the substrate 205 are illustrated and described as being in separate configurations, the support 202 and the substrate 205 may form one body.
  • the mixed liquid supply unit 310 may supply a mixed liquid having structures having different masses onto the upper surface of the substrate 205.
  • the mixed liquid supply unit 310 may supply the mixed liquid to a portion of the upper surface of the substrate 205 located at a relatively high position from the ground.
  • the mixed liquid supply unit 310 may drop the mixed liquid on one point of the upper surface of the substrate 205. According to another embodiment, the mixed liquid supply unit 310 may supply the mixed liquid to the upper surface of the substrate 205 in the form of a line extending in one direction. The one direction may be a direction crossing the direction in which the upper surface of the substrate 205 extends toward the ground.
  • the substrate pretreatment providing unit 320 as described with reference to FIG. 1, to pretreat the upper surface of the substrate 205, plasma, UV on the upper surface of the substrate 205.
  • plasma UV on the upper surface of the substrate 205.
  • UV ultraviolet
  • ozone ozone
  • the inclination angle adjusting unit 330 may adjust the inclination angle of the upper surface and the ground of the substrate 205.
  • the inclination angle adjusting unit 330 may be a lifting device provided between the support 202 and the substrate 205.
  • the inclination angle adjusting unit 330 adjusts the height of a portion of the substrate 205 adjacent to the ground to adjust the inclination angle of the upper surface and the ground of the substrate 205.
  • the inclination angle adjusting unit 330 may adjust a height of a portion of the substrate 205 located at a relatively high position from the ground to adjust the inclination angle of the upper surface of the substrate 205 and the ground.
  • the inclination angle adjusting unit 330, the inclined angle of the upper surface and the ground surface of the substrate 205 at a predetermined angle in the process of providing the mixed liquid on the upper surface of the substrate 205 I can keep it.
  • the inclination angle adjusting unit 330 may deform the inclination angle of the upper surface of the substrate 205 and the ground in the process of providing the mixed liquid on the upper surface of the substrate 205. Can be.
  • a substrate having an upper surface inclined with respect to the ground may be provided in plural. This will be described with reference to FIGS. 17 and 18.
  • 17 is a view for explaining the purification apparatus of a microstructure according to another embodiment of the present invention.
  • a plurality of substrates 205 having a top surface inclined with respect to the ground described with reference to FIG. 16 are provided. Portions of the upper surfaces of the plurality of substrates 205 located relatively high from the ground may be disposed adjacent to each other. Accordingly, one mixed liquid supply unit 310 may easily supply the mixed liquid to the upper surfaces of the plurality of substrates 205, and thus, purification of the microstructure may be continuously performed.
  • mixed liquid supply part 310 Although one mixed liquid supply part 310 is illustrated in FIG. 17, two or more mixed liquid supply parts may be provided.
  • the upper surface of the substrate may be wider as it is adjacent to the ground. This will be described with reference to FIG. 18.
  • FIG. 18 is a view for explaining a purification apparatus of a microstructure according to another embodiment of the present invention.
  • upper surfaces of the plurality of substrates 205a supported by the plurality of supports 205a become gradually wider as they are adjacent to the ground. Can be. In other words, a portion of the upper surface of the substrate 205a that is located relatively close to the ground may be wider than a portion of the upper surface of the substrate 205a that is relatively far from the ground. As a result, a portion of the mixed solution spread on the upper surface of the substrate 205a may be easily collected.
  • Upper surfaces of the plurality of substrates 205a supporting the plurality of substrates 205a may also gradually widen as they are adjacent to the ground, similarly to the upper surfaces of the plurality of substrates 205a. .
  • FIG. 19 is a micrograph of a diffusion experiment of structures according to a method of purifying a microstructure according to an embodiment of the present invention.
  • the region (a) closest to the central portion of the glass substrate provided with methanol contained 30 nanometers or more of silver nanowire minorities and 5-15 ⁇ m silver nanowires and nanoparticles.
  • the silver nanowire density of about 30 ⁇ m was relatively high but the silver nanoparticles contained a large number
  • the silver nanowire of about 30 ⁇ m had the highest density.
  • Regions (d) and (e) were found to be mostly silver nanowires and silver nanoparticles of less than 10 ⁇ m.
  • a method of manufacturing a microstructure network and an apparatus for manufacturing the same according to an embodiment of the present invention are described.
  • FIGS. 21 to 23 are perspective views illustrating a method for manufacturing a microstructure network according to an embodiment of the present invention.
  • the microstructure network manufacturing method according to an embodiment of the present invention is a view for explaining a network formed between the contacts of the structures.
  • a base layer 410 may be formed on the substrate 400 (S410).
  • the substrate 400 may be a semiconductor substrate, a plastic substrate, and / or a glass substrate.
  • the substrate 400 may be flexible.
  • the substrate 400 may include any one of a glass substrate, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyether sulfone (PES), polyimide (PI), or acrylite. have.
  • the base layer 410 may include a plurality of conductive structures.
  • the structures may be silver nano structures such as silver nano particles and silver nano wires.
  • the structures of the base layer 410 may be, in addition to the silver nanostructures, inorganic materials (eg, graphene flakes, single-walled CNTs, double-walled CNTs, multi-walled CNTs, C 60 , C 85 , C 70, etc.), metal nanoparticles (eg, Au, Ag, Cu, Ni, Al, etc.), semiconductor materials (eg, Si, C, GaAs, ZnSe, InP, CdS, etc.), conductive organics (eg For example, PEDOT: PSS, PVP, etc., an oxide semiconductor material (SiO 2, ZnO, Al 2 O 3, In 2 O 3, SnO 2, etc.), a semiconductor quantum dot material in the form of a core / shell (eg, CdSe / CdSe, CdSe) / ZnTe, ZnSe / ZnS, PbS / CdS, ZnS / CdSe, CdS
  • Forming the base layer 410 having the structures on the substrate 400 may include bar coating, spray coating, spin coating, and brush coating. , Dip coating, or gravure coating.
  • an upper surface of the substrate 400 may be pretreated.
  • the substrate 400 may be pretreated to reduce surface energy of the substrate 400.
  • pretreating the substrate 400 may include providing at least one of plasma, ultraviolet (UV), or ozone to an upper surface of the substrate 400. can do.
  • a plasma using oxygen (O), argon (Ar), nitrogen (N), or hydrogen (H) gas may be provided on the upper surface of the substrate 400.
  • a first point P1 of the base layer 410 and a second point P2 different from the first point P1 may be selected.
  • the first point P1 and the second point P2 may be arbitrary points on the base layer 410.
  • the first point P1 and the second point P2 may be points adjacent to an edge of the base layer 410.
  • the first network 421 may be formed (S420).
  • the first network 421 electrically connected to the first point P1 and the second point P2 may be a current path flowing between the first point P1 and the second point P2. path) may correspond substantially.
  • Joule heating is generated by the current flowing between the first point P1 and the second point P2.
  • a current junction may be formed at the contact point 415a through which the structures 415 inside the base layer 410 intersect with each other. That is, the contact point 415a to which the structures 415 disposed adjacent to the current path intersect has a relatively high resistance, and thus, the first point P1 and the second point P2 are relatively high.
  • Joule heat may be generated at the contact points 415a of the structures 415 by the current flowing between them. Due to the Joule heat, the atoms constituting the structures 415 are moved so that the structures 415 spaced apart from each other are directly connected to each other, or the gap between the structures 415 spaced apart from each other is narrowed. Can be. Accordingly, the resistance of the contacts 415a of the structures 415 may be reduced, and the first network 421 to which the first point P1 and the second point P2 are electrically connected may be formed. Can be formed.
  • the structures 415 are silver nanostructures
  • a row of lines is formed at a contact point at which the silver nanostructures cross due to a current flowing between the first point P1 and the second point P2.
  • the silver atoms constituting the silver nanostructures may be moved through the polymer material surrounding the silver nanostructures, thereby connecting the silver nanostructures spaced apart from each other.
  • the third point P3 and the fourth point P4 of the base layer 410 may be selected.
  • the third point P3 and the fourth point P4 may be arbitrary points different from the first point P1 and the second point P2.
  • the third point P3 and the fourth point P4 may be points adjacent to an edge of the base layer 410.
  • a current is applied between the third point P3 and the fourth point P4 so that the third point P3 and the fourth point P4 are electrically connected by the structures.
  • the second network 422 may be formed (S430).
  • the second network 422 electrically connected to the third point P3 and the fourth point P4 may be substantially connected to a current path flowing between the third point P3 and the fourth point P4. It may correspond to.
  • the current path flowing between the third point P3 and the fourth point P4 may be different from the current path flowing between the first point P1 and the second second point P2.
  • Joule heating is generated by the current flowing between the third point P3 and the fourth point P4, and as described with reference to FIG. 5, by the joule heat, the third point ( The structures 415 adjacent to the current path flowing between P3) and the fourth point P4) may be electrically connected to each other.
  • a current is applied between other points in addition to the first to fourth points P1 to P4, thereby forming the structure.
  • a plurality of networks 420 may be further formed by electrically connected to each other.
  • a process of applying a current between any two points of the base layer 410 may be performed. It can be carried out as. Accordingly, a plurality of different current paths may be provided in the base layer 410, and a plurality of different networks corresponding to the different plurality of current paths may be formed.
  • the network in which the structures of the base layer 410 are electrically connected may be formed to decrease the resistance of the base layer 410.
  • a plurality of the networks may be provided so that sheet resistance of the base layer 410 may be substantially uniform.
  • the resistance may increase due to the polymer / insulating material existing between the structures.
  • the heat treatment is performed to reduce the resistance of the structures, there is a problem that the substrate is damaged.
  • a plurality of networks in which the structures are electrically connected by providing a plurality of different current paths may be formed.
  • a method of manufacturing a microstructure network can be provided that minimizes damage to a substrate, minimizes resistance of the base layer 410, and has a substantially uniform sheet resistance.
  • FIG. 25 illustrates an apparatus for manufacturing a microstructure network, according to an exemplary embodiment.
  • the microstructure manufacturing apparatus may include a support structure 510 and a plurality of electrodes 521, 522, 523 disposed adjacent to an edge of the support structure 510. 524, and a controller 550 for controlling the plurality of electrodes 521, 522, 523, 524.
  • the support structure 510 may be disposed on the substrate 400 described with reference to FIGS. 21 through 23 and on the base film 410 having conductive structures and disposed on the substrate 400.
  • the support structure 510 may include first to fourth sides. According to an embodiment, an area of the support structure 510 may be similar to that of the base layer 410.
  • the support structure 510 may be formed of an insulating material.
  • the plurality of electrodes 521, 522, 523, and 524 may include a first group 521 arranged along the first side of the support structure 510 and the second side of the support structure 510.
  • the second group 522 arranged along the third group 523 arranged along the third side of the support herbicide 510, and the fourth group arranged along the fourth side of the support structure 510.
  • Four groups 524 may be included.
  • the plurality of electrodes 521, 522, 523, 524 are disposed adjacent to an edge of the support structure 510, so that the plurality of electrodes 521, 522, 523, 524 It may correspond to an edge of the base layer 410.
  • each side of the support structure 510 four or five electrodes are illustrated on each side of the support structure 510, but the number of electrodes may be three or less, or six or more.
  • the controller 550 is selected from the plurality of electrodes 521, 522, 523, 524.
  • a current can be applied between the first and second electrodes.
  • the first and second electrodes may be included in different groups.
  • the first electrode may be included in the first group 521 and the second electrode may be included in the third group 523.
  • Current can flow between two points.
  • a current may be applied between the third and fourth electrodes selected from among the remaining electrodes except for the first and second electrodes 522, 523, and 524.
  • the third and fourth electrodes may be included in different groups.
  • the third electrode may be included in the second group 522, and the fourth electrode may be included in the fourth group 524.
  • the third point of the base layer 410 in contact with the third electrode and the base layer 410 in contact with the fourth electrode by the current applied between the third electrode and the third electrode. Current can flow between four points. By the current flowing between the third point and the fourth point, as described with reference to FIGS. 20 to 24, a second network in which the third point and the fourth point are electrically connected by the structures is formed. Can be.
  • the magnitude of the current applied between the third electrode and the fourth electrode and / or the time when the current is applied may be substantially equal to each other.
  • the microstructure network manufacturing method described with reference to FIGS. 20 to 24 may be performed by the microstructure network manufacturing apparatus according to an embodiment of the present invention. have.
  • 26 to 27 are for explaining an apparatus for manufacturing a microstructure network according to another embodiment of the present invention.
  • the apparatus for manufacturing a microstructure network may include a first electrode 610, a second electrode 620 spaced apart from the first electrode 610, and a support rod 630. , a support rod, a rotation rod 640, and a controller 650 for controlling the first electrode 610, the second electrode 620, and the rotation rod 640. .
  • An apparatus for manufacturing a microstructure network according to another embodiment of the present invention is provided on the substrate 400 described with reference to FIGS. 21 to 23 and on the base film 410 disposed on the substrate 400 and having conductive structures. Can be arranged.
  • the first electrode 610 and the second electrode 620 may be spaced apart from each other and may extend in a first direction.
  • the first direction may be a direction perpendicular to an upper surface of the base layer 410.
  • the lengths of the first electrode 610 and the second electrode 620 may be substantially the same.
  • One end of the first electrode 610 and one end of the second electrode 620 may be connected to both ends of the support rod 630, respectively. According to an embodiment, the first electrode 610 and the second electrode 620 may be fixed to the support rod 630.
  • the rotation rod 640 may be connected to the central portion of the support rod 230 and extend in the first direction.
  • the rotation rod 640 may rotate the first direction on a rotation axis. Accordingly, the support rod 630 rotates the rotation rod 640 to the rotation axis, and the first electrode 610 and the second electrode 620 connected to both ends of the support rod 630 are rotated. Can rotate The first electrode 610 and the second electrode 620 are fixed to both ends of the support rod 630, so that the first electrode 610 and the second electrode are rotated even if the rotating rod 640 rotates. The distance between the electrodes 620 may be kept constant.
  • the controller 650 is disposed between the first and second electrodes 610 and 620.
  • Current can be applied.
  • the first point and the second point may be adjacent to an edge of the base layer 410.
  • the first network 661 is electrically connected to the first point and the second point by the structures as described with reference to FIGS. 20 to 24 by the current flowing between the first point and the second point. ) May be formed.
  • the controller 650 may rotate the rotating rod 640. Accordingly, the first electrode 610 and the second electrode 620 may be in contact with third and fourth points of the base layer 410, respectively. As described above, even if the rotating rod 640 rotates, the distance between the first electrode 610 and the second electrode 620 is kept constant, the distance between the first point and the point is, The distance between the three points and the fourth point may be substantially equal to each other.
  • the controller 650 may include a first And a current may be applied between the second electrodes 610 and 620. A current may flow between the third point and the fourth point by the current applied between the first electrode 610 and the second electrode 620.
  • the second network 662 in which the third point and the fourth point are electrically connected by the structures, as described with reference to FIGS. 20 to 24, by the current flowing between the third and fourth points. ) May be formed.
  • the time that is applied may be substantially equal to each other.
  • the distance between the points where the current is applied by the first electrode 610 and the second electrode 620 are the same, so that the first electrode 610 and the second electrode The difference in length of the plurality of networks formed by the current by 620 can be minimized. Accordingly, the uniformity of the sheet resistance of the base layer 410 may be improved.
  • the method for manufacturing a microstructure network described with reference to FIGS. 20 to 24 is a microstructure network according to an embodiment of the present invention. It can be performed with the manufacturing apparatus.
  • the present invention relates to a substrate having a microstructure, a method for manufacturing the same, a method for refining a microstructure, a method for producing a microstructure network, and an apparatus for manufacturing the same.
  • the present invention relates to various technical fields such as an organic light emitting device, a liquid crystal display, a touch panel, and a solar cell. Can be utilized.

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Abstract

La présente invention concerne un procédé de fabrication pour un substrat qui possède une microstructure. Le procédé de fabrication pour un substrat qui possède une microstructure comprend les étapes suivantes : la formation d'une microstructure sur la surface supérieure d'un substrat auxiliaire ; l'application d'une solution de base sur la microstructure ; la formation d'un substrat de base qui couvre la microstructure en thermo-traitant la solution de base ; et l'élimination du substrat auxiliaire à partir du substrat de base.
PCT/KR2014/011989 2013-12-10 2014-12-08 Substrat possédant une microstructure, procédé de fabrication associé, procédé d'affinage pour microstructure, procédé de fabrication pour réseau à microstructure, et appareil de fabrication associé WO2015088208A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US15/102,831 US10166571B2 (en) 2013-12-10 2014-12-08 Refining method for microstructure
US16/200,430 US11141890B2 (en) 2013-12-10 2018-11-26 Substrate including nano/micro structure, method for manufacturing the same, method for refining nano/micro structure, method for manufacturing nano/micro structure network, and manufacturing apparatus therefor

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR20130152954 2013-12-10
KR10-2013-0152954 2013-12-10
KR1020140074672A KR101506425B1 (ko) 2014-06-19 2014-06-19 미세 구조체의 정제 방법 및 정제 장치
KR10-2014-0074672 2014-06-19
KR10-2014-0097710 2014-07-31
KR1020140097710A KR101518675B1 (ko) 2014-07-31 2014-07-31 미세 구조체 네트워크 제조 방법 및 그 제조 장치
KR1020140170362A KR101627050B1 (ko) 2013-12-10 2014-12-02 미세 구조체를 갖는 기판, 및 그 제조 방법
KR10-2014-0170362 2014-12-02

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