WO2015040717A1

WO2015040717A1 - Gas-barrier film and process for producing same

Info

Publication number: WO2015040717A1
Application number: PCT/JP2013/075319
Authority: WO
Inventors: 飛鳥　政宏
Original assignee: 積水化学工業株式会社
Priority date: 2013-09-19
Filing date: 2013-09-19
Publication date: 2015-03-26
Also published as: JPWO2015040717A1; JP5663100B1

Abstract

Provided is a gas-barrier film which is excellent in terms of gas-barrier property, transparency, and flexibility. This gas-barrier film is characterized by comprising a transparent film and a gas-barrier layer formed on and integrated with one surface of the transparent film, the gas-barrier layer comprising an oxynitride represented by general formula (1): ZnSn_aO_bN_c (wherein a is 2.1-15, b is 0.5-22, and c is 0.05-1.1). With such gas-barrier film, it is possible to provide a solar cell module, a liquid-crystal display panel, an organic EL display panel, etc. which can be bent or rolled up and can be disposed along a curved surface.

Description

Gas barrier film and method for producing the same

The present invention relates to a gas barrier film excellent in gas barrier properties and flexibility against oxygen, water vapor, and the like, and a method for producing the same.

The gas barrier film is used as a packaging bag for foods and pharmaceuticals, and according to the gas barrier film, it is possible to prevent the quality of the contents of the packaging bag from being changed due to the influence of oxygen, water vapor or the like. The gas barrier film is also used as a part of a product structure such as a solar cell module, a liquid crystal display panel, and an organic EL (electroluminescence) display panel, or as a package material for an element included in the product structure. ing. The gas barrier film can prevent the elements contained in the product structure from deteriorating in performance due to contact with oxygen or water vapor.

As such a gas barrier film, a synthetic resin film such as a polyvinyl alcohol film or an ethylene-vinyl alcohol copolymer film is used. However, the synthetic resin film has a problem that the water vapor barrier property is insufficient, and the oxygen barrier property is lowered under high humidity.

Therefore, a gas barrier film having a synthetic resin film and a metal oxide film formed on the synthetic resin film is known.

For example, Patent Document 1 discloses that a transparent synthetic resin plate is formed on both surfaces of the transparent synthetic resin plate, and silicon oxide, aluminum oxide, zinc oxide, indium tin oxide, silicon nitride, magnesium fluoride, and the like. A gas barrier film having a metal oxide film is disclosed.

Patent Document 2 discloses a gas barrier film comprising a transparent thermoplastic film and a transmission barrier layer made of a compound of elements of zinc, tin and oxygen, and having a zinc mass ratio of 5% to 70%. ing.

Further, in Patent Document 3, a layer A composed of a compound of at least one element of a group of zircon, aluminum, zinc, tin, silicon, and titanium containing at least one of oxygen and nitrogen elements on a substrate; , A gas barrier formed by alternately laminating layers B composed of a compound of at least one element of the group of zircon, aluminum, zinc, tin, silicon, and titanium containing at least one of oxygen, nitrogen, and carbon elements A functional film is disclosed.

Japanese Patent No. 4203237 International Publication No. 2008/135109 International Publication No. 2009/127373

In recent years, it has been desired that solar cell modules, liquid crystal display panels, and organic EL display panels have flexibility in order to enable installation on curved surfaces. Therefore, it is desired that the gas barrier film also has flexibility. However, in the conventional gas barrier film, the flexibility of the metal oxide film is low. Therefore, when the gas barrier film is bent, the metal oxide film is cracked, and there is a problem that the gas barrier property of the gas barrier film is lowered.

In addition, the gas barrier film must have excellent transparency in order to increase the visibility of the packaged contents and the image displayed on the display panel or to transmit light such as sunlight. Is also sought. However, since the transparency of the metal oxide film is low, there is a problem that the transparency of the gas barrier film is low as a result.

Therefore, an object of the present invention is to provide a gas barrier film excellent in gas barrier properties, transparency and flexibility.

The gas barrier film of the present invention is
A transparent film,
And is laminated and integrated on one surface of the transparent film, and has the general formula (1): ZnSn _a O _b N _c (wherein a is 2.1 to 15, b is 0.5 to 22, c is from 0.05 to 1.1), and a gas barrier layer containing an oxynitride,
It is characterized by including.

The gas barrier layer containing zinc and tin oxynitrides represented by the above general formula (1) is not only excellent in gas barrier properties but also excellent in transparency and flexibility. Therefore, the gas barrier film of the present invention using such a gas barrier layer is excellent in gas barrier properties, transparency and flexibility, and thereby a solar cell module that can be installed along a curved surface, A liquid crystal display panel, an organic EL display panel, and the like can be provided.

Sectional drawing of the gas barrier film which is one Embodiment of this invention is shown. Sectional drawing of the gas-barrier film which is other one Embodiment of this invention is shown. It is a longitudinal cross-sectional view of the solar cell module which is other one Embodiment of this invention. It is a longitudinal cross-sectional view of the thin film solar cell which is other one Embodiment of this invention.

The gas barrier film of the present invention has a transparent film and a gas barrier layer laminated and integrated on one surface of the transparent film.

(Transparent film)
As the resin constituting the transparent film, a transparent synthetic resin is used. For example, a polyolefin resin such as polyethylene and polypropylene, a vinyl resin such as polyvinyl alcohol and a saponified ethylene-vinyl acetate copolymer; polyethylene terephthalate, polyethylene Polyester resins such as isophthalate, polyethylene naphthalate, polyethylene-2,6-naphthalate and polybutylene terephthalate; Polyether resins such as polyoxymethylene; Polyamide resins such as nylon-6 and nylon-6,6; Polycarbonate Polyimide; polyetherimide; polyethersulfone; polysulfone; polyetheretherketone; polyetherketoneketone and the like can be used. Moreover, these synthetic resins may be used independently and can also use 2 or more types together.

The transparent film may contain known additives such as an antistatic agent, an ultraviolet absorber, a plasticizer, a lubricant, and a colorant as necessary. The thickness of the transparent film is preferably 3 to 300 μm, more preferably 12 to 300 μm, and particularly preferably 50 to 200 μm.

The total light transmittance of the transparent film is preferably 80% or more, more preferably 85 to 100%. A transparent film having a total light transmittance of 80% or more is excellent in transparency. According to the gas barrier film having such a transparent film, a liquid crystal display panel and an organic EL display excellent in image visibility. A panel and a solar cell module with high power generation efficiency can be provided.

In addition, the total light transmittance of a transparent film can be measured, for example using a haze meter (Nippon Denshoku Industries Co., Ltd. product name NDH2000) by the method based on JISK7105, for example.

(Smoothing layer)
A gas barrier layer is preferably laminated and integrated on one surface of the transparent film via a smoothing layer. Therefore, the gas barrier film of the present invention has a transparent film, a smoothing layer laminated and integrated on one surface of the transparent film, and a gas barrier layer laminated and integrated on one surface of the smoothing layer. It is preferable.

The transparent film may have a convex portion that is difficult to cover with a gas barrier layer on one side. When a gas barrier layer is formed on one surface of such a transparent film, the tip of the convex portion of the transparent film is exposed from the surface of the gas barrier layer without being covered with the gas barrier layer, which may reduce the gas barrier properties of the gas barrier film. There is. However, the smoothing layer is excellent in surface smoothness, and can cover the whole convex part of a transparent film. By using such a smoothing layer, the gas barrier property of the gas barrier film can be improved.

The maximum height _Ry of one surface of the smoothing layer on which the gas barrier layer is laminated and integrated is preferably 100 nm or less, more preferably 80 nm or less, particularly preferably 50 nm or less, and most preferably 0.1 to 20 nm. A smoothing layer having a maximum height _{Ry that} is too large may have convex portions that are difficult to cover with the gas barrier layer due to the unevenness of one or both of the transparent film and the smoothing layer. When the gas barrier layer is formed on one surface of the smoothing layer by a physical vapor deposition method such as a sputtering method, the tip portion of such a convex portion protrudes from the surface of the gas barrier layer without being covered with the gas barrier layer, and thereby has a gas barrier property. Reduces the gas barrier properties of the film.

The surface roughness R _a of one surface of the smoothing layer gas barrier layer is laminated and integrated is preferably 0.1 ~ 50 nm, more preferably 0.1 ~ 30 nm, particularly preferably 0.1 ~ 15 nm. A smoothing layer having _a surface roughness Ra exceeding 100 nm may be difficult to completely cover with a gas barrier layer. Further, the smoothing layer having _a surface roughness _Ra of less than 0.1 nm may reduce the adhesion with the gas barrier layer. When the gas barrier film is bent or rolled, the smoothing layer having low adhesion is peeled off from the smoothing layer, thereby reducing the gas barrier property of the gas barrier film.

In the present invention, the maximum height R _y and surface roughness R _a in a plane gas barrier layer is laminated and integrated in the smoothing layer can be measured by a method based on JIS B0601 (1982 years). The maximum height R _y and the surface roughness _Ra can be measured using, for example, a non-contact three-dimensional micro surface shape measurement system (product name RST-Plus manufactured by Wyco). A specific measurement method is as follows. First, in accordance with JIS B0601 (1982), the maximum height R _y or the surface roughness Ra is set to _a measurement length of 1 μm at any five locations on the surface where the gas barrier layer of the smoothing layer is laminated and integrated. taking measurement. The arithmetic mean value of the measured value of the maximum height R _y, or surface roughness R _a thereby obtained, the maximum height in a plane gas barrier layer is laminated and integrated in the smoothing layer R _y or surface roughness R _a .

Smoothing layer having a maximum height R _y and surface roughness R _a in the range described above, excellent in surface smoothness. Such a smoothing layer can be formed using a material that can form a coating film having a smooth surface and does not reduce the transparency of the transparent film. Examples of such a smoothing layer include (1) a transparent synthetic resin coating layer, (2) a layer formed by a sol-gel method using a composition containing a metal alkoxide, and (3) a radical polymerizable group. And a layer containing a reaction product of a composition containing an alkoxysilane (A) having a radical and an alkoxysilane (B) having no radical polymerizable group.

(1) The transparent synthetic resin coating layer can be formed by a method of applying a composition containing a transparent synthetic resin to one surface of a transparent film. The composition can be prepared by dispersing or dissolving a transparent synthetic resin in a solvent. Preferred examples of the transparent synthetic resin include acrylic resins, methacrylic resins, and epoxy resins. Examples of the solvent include toluene, ethyl acetate, ethanol and the like. Further, the content of the transparent synthetic resin in the composition is preferably 10 to 40% by weight.

After application of the composition, a transparent synthetic resin coating layer can be produced on one surface of the transparent film by removing the solvent contained in the applied composition. The removal of the solvent can be performed, for example, by heating the applied composition.

(2) A layer formed by a sol-gel method using a composition containing a metal alkoxide is obtained by applying a composition containing a metal alkoxide such as tetramethoxysilane to one surface of the transparent film, hydrolyzing and dehydrating the metal alkoxide. After forming a sol, the applied composition can be heated to remove the moisture and sinter the resulting gel. The composition further includes a curing catalyst and a solvent as required.

(3) A layer containing a reaction product of a composition containing an alkoxysilane (A) having a radically polymerizable group and an alkoxysilane (B) not having a radically polymerizable group is formed on one surface of the transparent film. After applying a composition containing an alkoxysilane (A) having a group, an alkoxysilane (B) not having a radical polymerizable group, and water, the applied composition is irradiated with active energy rays to thereby obtain the alkoxysilane. An alkoxy group possessed by the radical polymer obtained by the radical polymerization and an alkoxy group possessed by the alkoxysilane (B) after radical polymerization of the radical polymerizable group possessed by (A) or while performing radical polymerization. It can be produced by a method of hydrolysis and dehydration condensation reaction. Thereby, the layer formed by hardening the composition containing the alkoxysilane (A) which has a radically polymerizable group, the alkoxysilane (B) which does not have a radically polymerizable group, and water can be formed.

The layer containing the reaction product of the composition containing the alkoxysilane (A) having a radical polymerizable group and the alkoxysilane (B) having no radical polymerizable group is formed by the method described above. In such a layer, not only a radical polymer of alkoxysilane (A) is formed, but also a dehydration condensate of alkoxysilane (B) is formed so as to crosslink the main chain of the radical polymer. Therefore, it has a dense network structure. Such a layer having a dense network structure is not only excellent in surface smoothness and transparency, but also can highly prevent permeation of gases such as oxygen and water vapor.

In the present invention, the radical polymerizable group means a group capable of addition polymerization by radical polymerization. Examples of such radically polymerizable groups include groups having an unsaturated double bond, and specifically include allyl groups, isopropenyl groups, maleoyl groups, styryl groups, vinylbenzyl groups, (meth) Examples include an acryloxy group, a (meth) acryloxyalkyl group, and a vinyl group. (Meth) acryloxy means acryloxy or methacryloxy.

As the radical polymerizable group possessed by the alkoxysilane (A), a (meth) acryloxy group, a (meth) acryloxyalkyl group and a vinyl group are preferably exemplified. Since the alkoxysilane (A) having these groups is excellent in radical polymerization reactivity, it can be highly polymerized. Thereby, a smooth network layer having a dense network structure and excellent gas barrier properties can be formed. The alkoxysilane (A) preferably has one radical polymerizable group.

Preferred examples of the alkoxysilane (A) having a radical polymerizable group include alkoxysilanes represented by the following general formula (I).

(Wherein R ¹ represents a (meth) acryloxyalkyl group having 4 to 9 carbon atoms or a vinyl group, R ² represents an alkyl group having 1 to 8 carbon atoms which may be substituted with an alkoxy group, R ³ represents an alkyl group having 1 to 4 carbon atoms, and n is 0 or 1.)

In R ¹ of the general formula (I), examples of the (meth) acryloxyalkyl group having 4 to 9 carbon atoms include (meth) acryloxymethyl group, 2- (meth) acryloxyethyl group, and 3- (meth) ) An acryloxypropyl group is preferred.

R ^{2 in the} general formula (I) is an alkyl group having 1 to 8 carbon atoms. Examples of such an alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, and a hexyl group. , Heptyl group, octyl group and the like. Moreover, the hydrogen atom which comprises the alkyl group may be substituted by the alkoxy group. Preferred examples of the alkyl group having 1 to 8 carbon atoms that is substituted with an alkoxy group include a methoxymethyl group, a 2-methoxyethyl group, and a 2-ethoxyethyl group.

Specific examples of the alkoxysilane represented by the general formula (I) include 3-acryloxypropyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltriethoxysilane, and 3-methacryloxypropyltriethoxy. Silane, 3-acryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-acryloxypropylmethyldiethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-acryloxypropyl-tris (2- Methoxyethoxy) silane, 3-methacryloxypropyl-tris (2-methoxyethoxy) silane, vinyltrimethoxysilane, and vinyltriethoxysilane. These alkoxysilanes (A) may be used individually by 1 type, and may use 2 or more types together. Of these, 3- (meth) acryloxypropyltrimethoxysilane is preferred because of its excellent radical polymerization reactivity.

The alkoxysilane (B) does not have a radical polymerizable group. As such an alkoxysilane (B), an alkoxysilane represented by the following general formula (II) is preferably used.

(Wherein R ⁴ and R ⁵ each represents an alkyl group having 1 to 8 carbon atoms, and m is an integer of 0 to 2)

R ⁴ and R ^{5 in} the general formula (II) are each an alkyl group having 1 to 8 carbon atoms, and preferably an alkyl group having 1 to 4 carbon atoms. Examples of R ⁴ and R ⁵ include a methyl group, an ethyl group, a propyl group, and a butyl group. m is preferably 0.

The alkoxysilane (B) represented by the general formula (II) can give a cross-linked structure between the main chains of the polymer obtained by radical polymerization of the alkoxysilane (A), thereby being excellent in the smoothing layer. It is possible to impart gas barrier properties.

Of these, preferred examples of the alkoxysilane (B) include tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, and tetrabutoxysilane. According to these, a dense cross-linked structure can be uniformly formed between the main chains of the alkoxysilane (A) polymer. Alkoxysilane (B) may be used individually by 1 type, and may use 2 or more types together.

The content of the alkoxysilane (B) in the composition is preferably 1 to 100 parts by weight, more preferably 1 to 50 parts by weight, particularly 1 to 20 parts by weight, based on 100 parts by weight of the alkoxysilane (A). preferable. When there is too little content of the alkoxysilane (B) in a composition, there exists a possibility that sufficient crosslinked structure cannot be formed between the principal chains of the polymer of alkoxysilane (A). Moreover, when there is too much content of the alkoxysilane (B) in a composition, there exists a possibility that the smoothing layer obtained may become white and transparency may fall.

It is preferable that the composition further contains polyfunctional (meth) acrylate (C) in addition to the above-described alkoxysilane (A) and alkoxysilane (B). The polyfunctional (meth) acrylate (C) means a (meth) acrylate having two or more (meth) acryloyl groups in one molecule. Moreover, polyfunctional (meth) acrylate (C) does not contain a silicon atom. When the composition further contains a polyfunctional (meth) acrylate (C), the copolymer is obtained by radical polymerization of alkoxysilane (A) and polyfunctional (meth) acrylate (C) by irradiation with active energy rays. Is formed. By using such a polyfunctional (meth) acrylate (C), a smoothing layer having excellent surface smoothness and gas barrier properties can be formed in a short time. The (meth) acryloyl group means an acryloyl group or a methacryloyl group. Moreover, (meth) acrylate means an acrylate or a methacrylate.

As polyfunctional (meth) acrylate (C), dipropylene glycol di (meth) acrylate, tripropylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, tetraethylene glycol di (meth) acrylate Bifunctional (meth) acrylates such as: trimethylolpropane tri (meth) acrylate, trifunctional (meth) acrylates such as pentaerythritol tri (meth) acrylate; tetramethylolmethane tetra (meth) acrylate, pentaerythritol tetra (meth) acrylate And tetrafunctional (meth) acrylates such as 6-functional (meth) acrylates such as dipentaerythritol hexa (meth) acrylate. Polyfunctional (meth) acrylate (C) may be used independently and may use 2 or more types together.

The content of the polyfunctional (meth) acrylate (C) in the composition is preferably from 0.1 to 200 parts by weight, more preferably from 10 to 150 parts by weight, more preferably from 20 to 20 parts by weight based on 100 parts by weight of the alkoxysilane (A). 120 parts by weight are particularly preferred. By making content of polyfunctional (meth) acrylate (C) into the said range, the smoothing layer excellent in gas barrier property can be formed.

The composition contains water in addition to the alkoxysilane (A) and alkoxysilane (B) described above. By containing water, the hydrolysis reaction and dehydration condensation reaction between the alkoxy group of the alkoxysilane (A) radical polymer and the alkoxy group of the alkoxysilane (B) are promoted, and the radical of the alkoxysilane (A). It becomes possible to form a network structure in which alkoxysilane (B) is crosslinked between the main chains of the polymer.

The water content in the composition is preferably 0.1 to 40 parts by weight, more preferably 1 to 30 parts by weight, and particularly preferably 2 to 20 parts by weight with respect to 100 parts by weight of the alkoxysilane (A). If the content of water in the composition is too small, excessive time is required to sufficiently advance the hydrolysis reaction and dehydration condensation reaction of the alkoxy group of the alkoxysilane (B), and the production efficiency of the gas barrier film is increased. There is a risk of lowering. Moreover, when there is too much content of the water in a composition, there exists a possibility that the water which exists excessively may inhibit the polymerization reaction of alkoxysilane (A).

In order to promote the hydrolysis reaction of the alkoxy group of alkoxysilane (A) or alkoxysilane (B), the composition preferably further contains an acid catalyst in addition to water. Acid catalysts include inorganic acids such as hydrochloric acid, sulfuric acid, and nitric acid; and organic acids such as formic acid and acetic acid. Of these, nitric acid is preferable. According to nitric acid, hydrolysis of the alkoxy group can be promoted moderately.

The content of the acid catalyst in the composition is preferably 0.001 to 5 parts by weight, more preferably 0.01 to 1 part by weight with respect to 100 parts by weight of water. If the amount of the acid catalyst added is too small, the effect obtained by adding the acid catalyst may not be sufficient. Moreover, when there is too much addition amount of an acid catalyst, there exists a possibility that the acidity of a gas-barrier resin layer may become high. A gas barrier film containing a gas barrier resin layer having a high acidity may be deteriorated at an early stage.

After applying a composition containing alkoxysilane (A), alkoxysilane (B) and water on one surface of the transparent film, the applied composition is irradiated with active energy rays. Examples of active energy rays applied to the composition include ultraviolet rays, electron beams, α rays, β rays, and γ rays. Among them, an electron beam is preferable because it has sufficient energy for radical polymerization of alkoxysilane (A).

When the applied composition is irradiated with an electron beam, the acceleration voltage of the electron beam is preferably 10 to 100 kV, and more preferably 10 to 50 kV. Further, the irradiation amount of the electron beam is preferably 50 to 200 kGy, and more preferably 100 to 175 kGy.

Radiation polymerization of the alkoxysilane (A) contained in the composition is performed by irradiating the composition coated on one surface of the transparent film with active energy rays. Moreover, when the said composition contains polyfunctional (meth) acrylate (C), radical polymerization of alkoxysilane (A) and polyfunctional (meth) acrylate (C) is performed by irradiation of the said active energy ray. Do.

In addition, since the composition contains water, with or after the initiation of the radical polymerization of alkoxysilane (A), or after the initiation, the alkoxy group and / or alkoxy group possessed by the radical polymer of alkoxysilane (A) Hydrolysis and dehydration condensation reaction between the substituted alkoxy group and the alkoxy group contained in the alkoxysilane (B), and hydrolysis and dehydration condensation reaction between the alkoxy groups contained in the alkoxysilane (B) occur. In order to sufficiently perform such hydrolysis and dehydration condensation reaction, the composition coated on one side of the transparent film is irradiated with active energy rays, and then these are preferably heated at a temperature of 40 to 150 ° C., more preferably 40 to It is preferable to leave it at 120 ° C. in an environment with a relative humidity of preferably 40 to 80%, more preferably 50 to 70%. The standing time is preferably 0.1 to 10 hours, more preferably 0.5 to 3 hours.

Examples of the smoothing layer include the above-described layers (1) to (3). Among them, the layer (3) is preferable because of excellent surface smoothness and gas barrier properties.

The smoothing layer may contain inert particles. It is possible to more easily adjust the maximum height R _y and surface roughness R _a of the smoothing layer by using the inert particles.

As the inert particles, substances that do not cause a chemical reaction with other materials constituting the smoothing layer are used. For example, inert inorganic particles such as Al ₂ O ₃ particles, SiO ₂ particles, TiO ₂ particles, BaSO ₄ particles, CaCO ₃ particles, talc particles, and kaolin particles, and inert organic particles such as crosslinked polystyrene particles and acrylic particles. Particles.

The average particle size of the inert particles is preferably 0.1 to 300 nm, more preferably 0.5 to 150 nm, and particularly preferably 1 to 30 nm. If the average particle diameter of the inert particles is too small, the inert particles may aggregate to reduce the transparency and surface smoothness of the smoothing layer. Moreover, when the average particle diameter of an inert particle is too large, there exists a possibility that the surface smoothness of a smoothing layer may fall.

In the present invention, the average particle diameter of the inert particles means a cumulative 50% value of the volume particle size distribution determined by the laser diffraction / scattering method.

In order to form a smoothing layer containing inert particles, inert particles may be added to the composition used to form the smoothing layer. For example, in order to form a layer formed by curing a composition comprising an alkoxysilane (A) having a radical polymerizable group, an alkoxysilane (B) not having a radical polymerizable group, and water, the radical polymerizable group is used. What is necessary is just to use the composition containing the alkoxysilane (A) which has, the alkoxysilane (B) which does not have a radically polymerizable group, water, and an inert particle.

The content of inert particles in the composition is preferably 1 to 150 parts by weight and more preferably 5 to 100 parts by weight with respect to 100 parts by weight of the alkoxysilane (A). If the content of the inert particles in the composition is too small, the effect of the inert particles may not be sufficiently obtained. Moreover, when there is too much content of the inert particle in a composition, there exists a possibility that the surface smoothness of a smoothing layer may fall.

The thickness of the smoothing layer is preferably 100 nm to 10 μm, more preferably 200 nm to 5 μm, and particularly preferably 500 nm to 3 μm. The smoothing layer having a thickness of less than 100 nm may not have sufficient surface smoothness. Moreover, in the smoothing layer whose thickness exceeds 10 μm, the rigidity becomes too high, and the flexibility of the gas barrier film may be lowered.

In the present invention, the thickness of the smoothing layer is determined by the following method. First, a cross section of the smoothing layer is photographed at a magnification of 10,000 times or more using a scanning electron microscope. Next, the thickness of five or more arbitrary positions is measured in the smoothing layer from the obtained photographed image, and the arithmetic average value is taken as the thickness of the smoothing layer.

(Gas barrier layer)
The gas barrier layer used in the gas barrier film of the present invention has a general formula (1): ZnSn _a O _b N _c (wherein a is 2.1 to 15 and b is 0.5 to 22) , C is 0.05 to 1.1). The oxynitride represented by the general formula (1) contains a nitrogen atom and a tin atom. The gas barrier property of the gas barrier layer can be improved by nitrogen atoms of oxynitride, and appropriate flexibility can be imparted to the gas barrier layer by tin atoms of oxynitride. Therefore, even when the gas barrier film using the gas barrier layer containing oxynitride is bent or rolled, the gas barrier layer does not crack and can maintain excellent gas barrier properties.

In the general formula (1), a represents the ratio (atomic ratio) of the number of tin atoms to the number of zinc atoms, and is limited to 2.1 to 15, preferably 2.1 to 10, preferably 2.2 to 5 Is more preferable. If the atomic ratio a of tin atoms is too small in the general formula (1), the gas barrier property and flexibility of the gas barrier layer may be lowered. Further, if the atomic ratio a of tin atoms is too large in the general formula (1), the transparency of the gas barrier layer may be lowered.

In the general formula (1), b represents the ratio (atomic ratio) of the number of oxygen atoms to the number of zinc atoms, and is limited to 0.5 to 22, preferably 0.55 to 20, more preferably 1 to 4 preferable. If the atomic ratio b of oxygen atoms is too large in the general formula (1), the flexibility of the gas barrier layer may be lowered. In addition, if the atomic ratio b of oxygen atoms is too small in the general formula (1), the transparency and flexibility of the gas barrier layer may be lowered.

C in the general formula (1) represents the ratio of the number of nitrogen atoms to the number of zinc atoms (atomic ratio), and is limited to 0.05 to 1.1, preferably 0.15 to 1, More preferable is 0.5. If the atomic ratio c of nitrogen atoms is too large in the general formula (1), the transparency of the gas barrier layer may be lowered. Further, if the atomic ratio c of nitrogen atoms is too small in the general formula (1), the gas barrier property of the gas barrier layer may be lowered.

The gas barrier layer may contain, for example, aluminum or the like in addition to zinc and tin oxynitride, but is preferably made of only zinc and tin oxynitride.

The ratio of zinc atom, tin atom, oxygen atom and nitrogen atom in zinc and tin oxynitrides contained in the gas barrier layer is, for example, XPS (X-ray photoelectron, product name ESCALAB-200R manufactured by VG Scientific Fix Co., Ltd.) It can be measured using a spectroscopic surface analyzer.

Mg can be used for the X-ray anode of the XPS surface analyzer, and measurement can be performed at an output of 600 W (acceleration voltage: 15 kV, emission current: 40 mA). The energy resolution is set to be 1.5 eV to 1.7 eV when defined by the half width of a clean Ag 3d _5/2 peak.

Specifically, as the measurement by the XPS surface analyzer, first, a range of binding energies of 0 eV to 1100 eV is measured at a data acquisition interval of 1.0 eV to determine what elements are detected. Next, with respect to all the detected elements except the etching ion species, the data acquisition interval is set to 0.2 eV, and the photoelectron peak giving the maximum intensity is narrow-scanned to measure the spectrum of each element. The obtained spectrum is COMMON DATA PROCESSING SYSTEM manufactured by VAMAS-SCA-JAPAN (preferably Ver. 2.3 or later) so as not to cause a difference in the content calculation result due to a difference in measuring apparatus or computer. Thus, the value of the content of each analysis target element (nitrogen, oxygen, zinc, tin, etc.) can be determined as the atomic concentration (at%).

Before performing the quantitative process, a smoothing process is performed for 5 points by calibrating the Count Scale for each element. In the quantitative processing, the peak area intensity (cps · eV) from which the background is removed is used. For background processing, a method by Shirley is used. For the Shirley method, see D.C. A. Shirley, Phys. Rev. , B5, 4709 (1972).

The thickness of the gas barrier layer is preferably 20 to 600 nm, more preferably 150 to 550 nm, and particularly preferably 50 to 300 nm. If the thickness of the gas barrier layer is too thin, sufficient gas barrier properties may not be imparted to the gas barrier film. Moreover, when the thickness of a gas barrier layer is too thick, there exists a possibility that the flexibility of a gas barrier layer may fall. When a gas barrier layer with low flexibility is used, when the gas barrier film is bent or rolled, cracks occur in the gas barrier layer, thereby reducing the gas barrier properties of the gas barrier film.

In addition, in this invention, the thickness of a gas barrier layer is calculated | required by the method similar to the measuring method of the thickness of the smoothing layer mentioned above.

It is preferable that the maximum height R _y of one surface of the smoothing layer on which the gas barrier layers are laminated and integrated and the thickness T _{b of the} gas barrier layer satisfy the relationship represented by the following formula: R _y <T _b . According to the smoothing layer and the gas barrier layer satisfying such a relationship, excellent gas barrier properties can be imparted to the gas barrier film.

In order to produce a gas barrier layer containing the oxynitride represented by the general formula (1) on one surface of the transparent film, it is preferable to use a physical vapor deposition method. According to the physical vapor deposition method, the atomic ratio of zinc atoms, tin atoms, oxygen atoms, and nitrogen atoms contained in the oxynitride in the gas barrier layer can be easily adjusted. Examples of such physical vapor deposition include vacuum deposition, ion plating, and sputtering. Among these, sputtering is preferred, and DC magnetron sputtering is more preferred.

In order to produce a gas barrier layer by DC magnetron sputtering, for example, an alloy of zinc and tin is used as a target, oxygen gas and nitrogen gas are used as decomposition gases, and zinc and tin are formed on one surface of a transparent film by DC magnetron sputtering. A gas barrier layer can be formed by depositing and depositing oxynitride.

By adjusting the atomic ratio of zinc atoms and tin atoms in the alloy of zinc and tin and the amount of oxygen gas and nitrogen gas introduced, the atomic ratio of zinc atoms, tin atoms, oxygen gas and nitrogen gas in the resulting oxynitride Can be adjusted to a desired range.

When a zinc and tin oxynitride film is formed by the DC magnetron sputtering method, the film forming chamber of the DC magnetron sputtering apparatus is 1.33 × 10 ⁻² Pa (1.0 × 10 ⁻⁴ Torr) or less, particularly 0 After the pressure is reduced to less than or equal to .27 × 10 ⁻⁴ Pa (2.0 × 10 ⁻⁵ Torr), the pressure in the film forming chamber is 6.67 × 10 ⁻² Pa (5.0 × 10 ⁻⁴ Torr) to 1 Introducing an inert gas such as argon gas and a decomposition gas containing oxygen gas and nitrogen gas until .33 Pa (1.0 × 10 ⁻² Torr) is reached, and zinc and tin oxynitrides are formed by DC magnetron sputtering. It is preferable to start the film formation.

(Gas barrier film)
As shown in FIG. 1, the gas barrier film 10 of the present invention has a transparent film 11 and a gas barrier layer 12 laminated and integrated on one surface of the transparent film 11. Thus, the gas barrier layer 12 is preferably laminated and integrated so as to cover the entire surface of the transparent film 11. Thereby, the gas barrier film 10 excellent in gas barrier properties and flexibility can be provided.

Further, as shown in FIG. 2, the gas barrier film 10 of the present invention comprises a transparent film 11, a smoothing layer 13 laminated and integrated on one surface of the transparent film 11, and a surface of the smoothing layer 13. It may have a gas barrier layer 12 that is laminated and integrated. As described above, since the smoothing layer 13 that covers the unevenness of the one surface and is excellent in surface smoothness is laminated and integrated on one surface of the transparent film 11, one surface of the transparent film 11 is formed from the surface of the gas barrier layer 12. It is possible to prevent the portion from being exposed without being covered with the gas barrier layer, and to provide the gas barrier film 10 having excellent gas barrier properties.

Applications for which the gas barrier film of the present invention is used include packaging of articles that require blocking of various gases such as water vapor and oxygen, and packaging for preventing deterioration of food, industrial products, pharmaceuticals, and the like. It is done. In addition to such packaging applications, the gas barrier film of the present invention is used as a part of a product structure such as a solar cell module, a liquid crystal display panel, and an organic EL (electroluminescence) display panel, or as a product. It can be used as a packaging material for an element used in the structure. According to the gas barrier film, it is possible to prevent the elements used in the product structure from deteriorating in performance due to contact with oxygen or water vapor. Especially, it is preferable that the gas barrier film of this invention is used as a back surface side protection sheet or a light-receiving surface side protection sheet of a solar cell module or a thin film solar cell. The back surface side protective sheet and the light receiving surface side protective sheet are used for protecting a power generating element and a sealing resin such as an ethylene-vinyl acetate copolymer in a solar cell module or a thin film solar cell.

FIG. 3 shows a schematic longitudinal sectional view of a solar cell module A using the gas barrier film of the present invention. The solar cell module A includes a power generation element 20, a pair of sealing

materials

30 and 30 ′ sandwiching the power generation element 20, and a transparent protective member laminated and integrated on the surface of one sealing material 30 40 and a back side protective sheet 50 laminated and integrated on the back side of the other sealing material 30 ′. The gas barrier film of the present invention is preferably used as the back side protective sheet 50.

FIG. 4 shows a schematic longitudinal sectional view of a thin film solar cell B using the gas barrier film of the present invention. The thin-film solar cell B includes a transparent protective member 60, a power generating element 70 formed on the back surface of the transparent protective member 60, and a seal integrated and laminated on the back surfaces of the transparent protective member 60 and the power generating element 70. It includes a material 80 and a back surface side protective sheet 90 laminated and integrated on the back surface of the sealing material 80. The gas barrier film of the present invention is preferably used as the back side protective sheet 90. The power generation element 70 is preferably formed directly on the back surface of the transparent protective member 60.

The

power generating elements

20 and 70 are not particularly limited, and are made of a transparent electrode made of a metal oxide thin film or the like and materials such as amorphous silicon, microcrystalline silicon, gallium-arsenic, copper-indium-selenium, CIS, and CdTe. The laminated body which laminated | stacked the photovoltaic layer which consists of, and the back electrode which consists of a metal thin film etc. in this order is mentioned. The sealing

materials

30, 30 ′ and 80 are not particularly limited, and ethylene-vinyl acetate copolymer films and the like are used. The transparent

protective members

40 and 60 are not particularly limited, and a glass plate or the like is used.

Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited thereto.

Example 1
1. Preparation of smoothing layer On one surface of a polyethylene naphthalate film (thickness 75 μm, total light transmittance 88%), 100 parts by weight of 3-methacryloxypropyltrimethoxysilane, 16 parts by weight of tetraethoxysilane, tripropylene glycol diacrylate 100 After applying a smoothing layer forming composition containing 8 parts by weight of water and 8 parts by weight of water with a gravure coater, an electron beam irradiation device (product name EC300 / 165/800 manufactured by ESI Co., Ltd.) is applied to the applied smoothing layer forming composition. ), The 3-methacryloxypropyl group and tripropylene glycol diacrylate of 3-methacryloxypropyltrimethoxysilane are present by irradiating an electron beam under the conditions of an acceleration voltage of 10 kV and an irradiation dose of 170 kGy. Radical polymerization with the acryloyl group After forming a cal polymer, a polyethylene naphthalate film having a smoothing layer-forming composition irradiated with an electron beam on the entire surface is allowed to stand in an environment of 120 ° C. and 50% relative humidity for 0.5 hours. , Hydrolysis and dehydration condensation reaction of methoxy group derived from 3-methacryloxypropyltrimethoxysilane and ethoxy group of tetraethoxysilane in radical polymer, and hydrolysis and dehydration condensation reaction between ethoxy groups of tetraethoxysilane To form a dehydration condensate of tetraethoxysilane that crosslinks between the main chains of the radical polymer, and a smoothing layer (thickness 3 μm, maximum) Height _Ry 0.9 nm, surface roughness _Ra 0.5 nm).

2. Production of gas barrier layer An alloy of 95 wt% zinc and 5 wt% tin as a target (zinc atom: tin atom (atomic ratio)) = 10: 1 on a cathode installed in a film forming chamber of a DC magnetron sputtering apparatus. ), The pressure in the film formation chamber is reduced, and the pressure (P ₁ ) in the film formation chamber after the pressure reduction is reduced to 1.1 × 10 ⁻² Pa (1.0 × 10 ⁻⁴ Torr) or less. A gas (flow rate of 100 Sccm) and a mixed gas of oxygen gas and nitrogen gas (flow rate of 20 Sccm, oxygen gas: nitrogen gas (molecular ratio) = 96: 4) as a source gas are introduced into the film formation chamber, and the gas composition after the gas introduction is introduced. The pressure (P ₂ ) in the film chamber was 0.5 Pa (3.5 × 10 ⁻³ Torr). Thereafter, a power of 1.9 kW is applied to the cathode, and a polyethylene naphthalate film having a smoothing layer is transported at a transport speed of 0.5 m / min so that the smoothing layer becomes a sputtering surface, thereby having a smoothing layer. By passing the polyethylene naphthalate film six times through the film forming chamber, a gas barrier layer (thickness: 500 nm) made of ZnSn ₁₀ O ₂₀ N ₁ was entirely formed on one surface of the smoothing layer. As a result, a gas barrier film in which a polyethylene naphthalate film, a smoothing layer, and a gas barrier layer were laminated and integrated in this order was obtained.

(Example 2)
1. Preparation of smoothing layer On one surface of a polyethylene naphthalate film (thickness 75 μm, total light transmittance 88%), 100 parts by weight of 3-methacryloxypropyltrimethoxysilane, 10 parts by weight of tetraethoxysilane, and tripropylene glycol diacrylate 120 For smoothing layer formation, a smoothing layer forming composition containing 10 parts by weight of water, 10 parts by weight of water, and 100 parts by weight of alumina particles (Al ₂ O ₃ , average particle diameter 10 nm) was applied by a gravure coater. By using an electron beam irradiation apparatus (product name EC300 / 165/800 manufactured by ESI) to irradiate the composition with an electron beam under the conditions of an acceleration voltage of 20 kV and an irradiation dose of 175 kGy, 3-methacryloxypropyltrimethoxysilane is present. 3-methacryloxypropyl groups and tripropylene glycol dia After forming a radical polymer by performing radical polymerization with acryloyl groups possessed by acrylate, a polyethylene naphthalate film having a smoothing layer-forming composition that has been irradiated with an electron beam over the entire surface is 120 ° C., relative By leaving it in an environment of 50% humidity for 1 hour, hydrolysis and dehydration condensation reaction of methoxy group derived from 3-methacryloxypropyltrimethoxysilane and ethoxy group of tetraethoxysilane in the radical polymer, and tetra A dehydration condensation product of tetraethoxysilane that crosslinks between the main chains of the radical polymer is formed by performing hydrolysis and dehydration condensation reaction between ethoxy groups of ethoxysilane, and is laminated on one surface of a polyethylene naphthalate film. integrated smoothing layer formed (thickness 1 [mu] m, maximum height R _y 10 nm, Table Roughness was obtained R _a 3 nm).

2. Preparation of Gas Barrier Layer An alloy of 14% by weight zinc and 86% by weight tin as a target (zinc atom: tin atom (atomic ratio)) = 0.3 is applied to a cathode installed in a film forming chamber of a DC magnetron sputtering apparatus. 1), the pressure inside the film formation chamber is reduced, and the pressure (P ₁ ) in the film formation chamber after the pressure reduction is reduced to 1.33 × 10 ⁻² Pa (10 × 10 ⁻⁴ Torr) or less, and then argon is added. A gas (flow rate of 100 Sccm) and a mixed gas of oxygen gas and nitrogen gas (flow rate of 20 Sccm, oxygen gas: nitrogen gas (molecular ratio) = 92: 8) as a raw material gas are introduced into the film formation chamber, and the composition after the gas introduction is completed. The pressure (P ₂ ) in the film chamber was 0.5 Pa (3.5 × 10 ⁻³ Torr). Thereafter, a power of 1.9 kW is applied to the cathode, and a polyethylene naphthalate film having a smoothing layer is transported at a transport speed of 0.5 m / min so that the smoothing layer becomes a sputtering surface, thereby having a smoothing layer. By passing the polyethylene naphthalate film six times through the film forming chamber, a gas barrier layer (thickness: 500 nm) made of ZnSn _3.3 O _0.67 N _0.5 was entirely formed on one surface of the smoothing layer. As a result, a gas barrier film in which a polyethylene naphthalate film, a smoothing layer, and a gas barrier layer were laminated and integrated in this order was obtained.

Example 3
1. Preparation of smoothing layer In the same manner as in Example 1, a smoothing layer (thickness 3 μm, maximum height R) formed by laminating and integrating the entire surface of a polyethylene naphthalate film (thickness 75 μm, total light transmittance 88%). _y 0.9 nm, surface roughness R _a 0.5 nm).

2. Production of gas barrier layer An alloy of 20 wt% zinc and 80 wt% tin as a target (zinc atom: tin atom (atomic ratio)) = 9:20 on a cathode installed in a film forming chamber of a DC magnetron sputtering apparatus. ), The pressure in the film formation chamber is reduced, and the pressure (P ₁ ) in the film formation chamber after the pressure reduction is reduced to 1.1 × 10 ⁻² Pa (1.0 × 10 ⁻⁴ Torr) or less. A gas (flow rate of 100 Sccm) and a mixed gas of oxygen gas and nitrogen gas (flow rate of 20 Sccm, oxygen gas: nitrogen gas (molecular ratio) = 78: 22) as a source gas are introduced into the film formation chamber, and the gas composition after the gas introduction is introduced. The pressure (P ₂ ) in the film chamber was 0.5 Pa (3.5 × 10 ⁻³ Torr). Thereafter, a power of 1.9 kW is applied to the cathode, and a polyethylene naphthalate film having a smoothing layer is transported at a transport speed of 0.5 m / min so that the smoothing layer becomes a sputtering surface, thereby having a smoothing layer. A gas barrier layer (thickness: 480 nm) made of ZnSn _2.2 O _0.55 N _0.18 was entirely formed on one surface of the smoothing layer by passing the polyethylene naphthalate film through the film formation chamber six times. As a result, a gas barrier film in which a polyethylene naphthalate film, a smoothing layer, and a gas barrier layer were laminated and integrated in this order was obtained.

(Comparative Examples 1 to 6)
In the preparation of the gas barrier layer, the composition of the target, the pressure in the deposition chamber after depressurization (P ₁ ), the composition of the raw material gas introduced into the deposition chamber, and the pressure in the deposition chamber after introduction of the gas (P ₂ ) are respectively shown. A gas barrier film was obtained in the same manner as in Example 1 except that the polyethylene naphthalate film, the smoothing layer, and the gas barrier layer were laminated and integrated in this order except that the change was made as shown in 2. Table 3 shows the composition of the oxide or oxynitride constituting the gas barrier layer produced in each comparative example.

Example 4
1. Preparation of smoothing layer On one surface of a polyethylene naphthalate film (thickness 75 μm, total light transmittance 88%), 100 parts by weight of 3-methacryloxypropyltrimethoxysilane, 10 parts by weight of tetraethoxysilane, and tripropylene glycol diacrylate 120 For smoothing layer formation, a smoothing layer forming composition containing 10 parts by weight of water, 10 parts by weight of water, and 100 parts by weight of alumina particles (Al ₂ O ₃ , average particle diameter 10 nm) was applied by a gravure coater. By using an electron beam irradiation apparatus (product name EC300 / 165/800 manufactured by ESI) to irradiate the composition with an electron beam under the conditions of an acceleration voltage of 20 kV and an irradiation dose of 175 kGy, 3-methacryloxypropyltrimethoxysilane is present. 3-methacryloxypropyl groups and tripropylene glycol dia After forming a radical polymer by performing radical polymerization with acryloyl groups possessed by acrylate, a polyethylene naphthalate film having a smoothing layer-forming composition that has been irradiated with an electron beam over the entire surface is 120 ° C., relative By leaving it in an environment of 50% humidity for 1 hour, hydrolysis and dehydration condensation reaction of methoxy group derived from 3-methacryloxypropyltrimethoxysilane and ethoxy group of tetraethoxysilane in the radical polymer, and tetra A dehydration condensation product of tetraethoxysilane that crosslinks between the main chains of the radical polymer is formed by performing hydrolysis and dehydration condensation reaction between ethoxy groups of ethoxysilane, and is laminated on one surface of a polyethylene naphthalate film. integrated smoothing layer formed (thickness 1 [mu] m, maximum height R _y 10 nm, Table Roughness was obtained R _a 3 nm).

2. Preparation of Gas Barrier Layer An alloy of 8% by weight zinc and 92% by weight tin as a target (zinc atom: tin atom (atomic ratio) = 2: 13) is placed on the cathode installed in the film forming chamber of the DC magnetron sputtering apparatus. ), The pressure in the film formation chamber is reduced, and the pressure (P ₁ ) in the film formation chamber after the pressure reduction is reduced to 1.4 × 10 ⁻² Pa (1.1 × 10 ⁻⁴ Torr) or less. A gas (flow rate of 100 Sccm) and a mixed gas of oxygen gas and nitrogen gas (flow rate of 20 Sccm, oxygen gas: nitrogen gas (molecular ratio) = 95: 5) as a raw material gas are introduced into the film formation chamber, and the gas composition after the gas introduction is introduced. The pressure (P ₂ ) in the film chamber was 0.5 Pa (3.5 × 10 ⁻³ Torr). Thereafter, a power of 1.9 kW is applied to the cathode, and a polyethylene naphthalate film having a smoothing layer is transported at a transport speed of 0.5 m / min so that the smoothing layer becomes a sputtering surface, thereby having a smoothing layer. By passing the polyethylene naphthalate film six times through the film forming chamber, a gas barrier layer (thickness: 500 nm) made of ZnSn _6.5 O ₁₀ N _0.6 was formed on the entire surface of the smoothing layer. As a result, a gas barrier film in which a polyethylene naphthalate film, a smoothing layer, and a gas barrier layer were laminated and integrated in this order was obtained.

(Example 5)
A polyethylene naphthalate film and a gas barrier layer were laminated and integrated in this order in the same manner as in Example 4 except that a gas barrier layer was formed on one surface of the polyethylene naphthalate film without forming a smoothing layer. A gas barrier film was obtained.

(Examples 6 to 11 and Comparative Examples 7 to 12)
In the preparation of the gas barrier layer, the composition of the target, the pressure in the deposition chamber after depressurization (P ₁ ), the composition of the raw material gas introduced into the deposition chamber, and the pressure in the deposition chamber after introduction of the gas (P ₂ ) are respectively shown. A gas barrier film in which a polyethylene naphthalate film, a smoothing layer, and a gas barrier layer were laminated and integrated in this order was obtained in the same manner as in Example 4 except that changes were made as shown in 1 and 2. Table 3 shows the composition of the oxynitride constituting the gas barrier layer produced in each example and comparative example.

Example 12
In the preparation of the smoothing layer, 3-methacryloxypropyltrimethoxysilane 100 parts by weight, tetraethoxysilane 64 parts by weight, tripropylene glycol diacrylate 100 parts by weight, water 27 parts by weight, ethanol 20 parts by weight, and alumina particles (Al Using a composition for forming a smoothing layer containing 100 parts by weight of ₂ O ₃ and an average particle diameter of 30 nm, a smoothing layer (thickness: 1 μm, maximum height) that is laminated and integrated on one surface of a polyethylene naphthalate film. Gas barrier properties obtained by laminating and integrating a polyethylene naphthalate film, a smoothing layer, and a gas barrier layer in this order in the same manner as in Example 2 except that the roughness R _y 86 nm and the surface roughness R _a 8 nm were obtained. A film was obtained. Table 3 shows the composition of oxynitride constituting the gas barrier layer.

(Example 13)
In the production of the gas barrier layer, the composition of the target, the pressure in the deposition chamber after decompression (P ₁ ), the composition of the raw material gas introduced into the deposition chamber, the pressure in the deposition chamber after introducing the gas (P ₂ ), and smoothing The polyethylene naphthalate film having a smoothing layer was changed as shown in Table 1 for the transport speed of the polyethylene naphthalate film having a smoothing layer when the polyethylene naphthalate film having a layer was passed through the film forming chamber. A gas barrier film was obtained in the same manner as in Example 2 except that the polyethylene naphthalate film, the smoothing layer, and the gas barrier layer were laminated and integrated in this order, except that was passed through the film formation chamber once. The composition of the oxynitride constituting the gas barrier layer is shown in Table 3.

(Examples 14 to 17)
In the production of the gas barrier layer, the composition of the target, the pressure in the deposition chamber after decompression (P ₁ ), the composition of the raw material gas introduced into the deposition chamber, the pressure in the deposition chamber after introducing the gas (P ₂ ), and smoothing Except having changed the conveyance speed of the polyethylene naphthalate film which has a smoothing layer at the time of letting the polyethylene naphthalate film which has a layer pass into a film-forming room as shown in Table 1, respectively, it carried out similarly to Example 2. Then, a gas barrier film in which a polyethylene naphthalate film, a smoothing layer, and a gas barrier layer were laminated and integrated in this order was obtained. Table 3 shows the composition of the oxynitride constituting the gas barrier layer produced in each example.

(Evaluation)
The water vapor permeability, flexibility, and transparency of the gas barrier film produced above were evaluated according to the following procedures. The results are shown in Table 1.

(Water vapor transmission rate)
A gas barrier film is wound around a 150 mmφ ABS rod so that the gas barrier layer is on the outside, and 15 minutes after the completion of winding, the procedure for opening the gas barrier film by unfolding the gas barrier film is one cycle. did. The flexibility test was performed by repeating this cycle 50 times.

Then, for each of the gas barrier films before and after the flexibility test, the water vapor transmission rate (g / m ² · day) is determined by a method in accordance with JIS K7129B. Measurement was performed under the conditions of a temperature of 40 ° C. and a relative humidity of 90% using a GTR Tech apparatus name GTR-2100). The water vapor transmission rate of the gas barrier film before the flexibility test is described in the column of “Water vapor transmission rate (before test)” in Table 3, and the water vapor transmission rate of the gas barrier film after the flexibility test is shown in “3. It was described in the column of “Water vapor transmission rate (after test)”.

(Flexibility)
A gas barrier film is wound around a 150 mmφ ABS rod so that the gas barrier layer is on the outside, and 15 minutes after the completion of winding, the procedure for opening the gas barrier film by unfolding the gas barrier film is one cycle. did. This cycle was repeated 50 times. Thereafter, a cross-cut test was performed in accordance with JIS K5400. This cross cut test was performed as follows. First, using a single-edged razor, eleven notches were cut vertically and horizontally at intervals of 1 mm on the surface of the gas barrier layer to make 100 1 mm square cells. The vertical cut and the horizontal cut intersected at an angle of 90 °. Next, a commercially available adhesive tape was affixed on 100 squares, and the adhesive tape was peeled off in a direction perpendicular to the surface of the gas barrier layer with the tip of the adhesive tape by hand. And the number of the meshes which peeled from the smoothing layer with peeling of this adhesive tape was measured, and the flexible evaluation was performed according to the following reference | standard. “A grid is peeled from the smoothing layer” means a state in which an area of 50% or more of each grid is separated from the smoothing layer.
A: No peeling was observed. B: The number of peeled squares was 1 or more and less than 5.
C: The number of squares peeled off was 5 or more and less than 10.
D: The number of squares peeled off was 10 or more.

(transparency)
The total light transmittance in the thickness direction of the gas barrier film is measured using a haze meter (Nippon Denshoku Co., Ltd. Suspension Meter NDH2000) according to a method in accordance with JIS K7105. Sex was evaluated.

The gas barrier film of the present invention is excellent in gas barrier properties and flexibility. Therefore, according to such a gas barrier film, a solar cell module, a liquid crystal display panel, an organic EL display panel, etc. that can be bent or rolled and can be installed along a curved surface are provided. Can be provided.

DESCRIPTION OF SYMBOLS 10 Gas barrier film 11 Transparent film 12 Gas barrier layer 13

Smoothing layer

20, 70 Electric

power generation element

30, 30 ', 80

Sealing material

40, 60 Transparent

protective member

50, 90 Back surface side protection sheet A Solar cell module B Thin film solar cell

Claims

A transparent film,
And is laminated and integrated on one surface of the transparent film, and has the general formula (1): ZnSn a O b N c (wherein a is 2.1 to 15, b is 0.5 to 22, c is from 0.05 to 1.1), and a gas barrier layer containing an oxynitride,
A gas barrier film comprising:
The gas barrier layer has a smoothing layer containing a reaction product of a composition containing an alkoxysilane (A) having a radical polymerizable group and an alkoxysilane (B) having no radical polymerizable group on one surface of the transparent film. The gas barrier film according to claim 1, wherein the gas barrier film is laminated and integrated.
The alkoxysilane (A) is an alkoxysilane represented by the following general formula (I), and the alkoxysilane (B) is an alkoxysilane represented by the following general formula (II). Gas barrier film.

(Wherein R 1 represents a (meth) acryloxyalkyl group having 4 to 9 carbon atoms or a vinyl group, R 2 represents an alkyl group having 1 to 8 carbon atoms which may be substituted with an alkoxy group, R 3 represents an alkyl group having 1 to 4 carbon atoms, and n is 0 or 1.)

(Wherein R 4 and R 5 each represents an alkyl group having 1 to 8 carbon atoms, and m is an integer of 0 to 2)
On one surface of the transparent film, the general formula (1): ZnSn a O b N c (wherein a is 2.1 to 15, b is 0.5 to 22, A gas barrier layer containing a oxynitride represented by the formula (1) is from 0.05 to 1.1).
The method for producing a gas barrier film according to claim 4, wherein the physical vapor deposition method is a sputtering method.