WO2015000391A1 - 红外发射和接收电路及其实现方法 - Google Patents

红外发射和接收电路及其实现方法 Download PDF

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Publication number
WO2015000391A1
WO2015000391A1 PCT/CN2014/081143 CN2014081143W WO2015000391A1 WO 2015000391 A1 WO2015000391 A1 WO 2015000391A1 CN 2014081143 W CN2014081143 W CN 2014081143W WO 2015000391 A1 WO2015000391 A1 WO 2015000391A1
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WO
WIPO (PCT)
Prior art keywords
signal
infrared
carrier
electronic device
processor
Prior art date
Application number
PCT/CN2014/081143
Other languages
English (en)
French (fr)
Inventor
张宇科
王剑峰
吴曙斌
Original Assignee
恬家（上海）信息科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from CN2013203890913U external-priority patent/CN203325207U/zh
Priority claimed from CN201310312245.3A external-priority patent/CN103400494B/zh
Priority claimed from CN 201320441531 external-priority patent/CN203366528U/zh
Application filed by 恬家（上海）信息科技有限公司 filed Critical 恬家（上海）信息科技有限公司
Priority to US14/902,440 priority Critical patent/US10043383B2/en
Publication of WO2015000391A1 publication Critical patent/WO2015000391A1/zh

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    • G—PHYSICS
    • G08—SIGNALLING
    • G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C23/00—Non-electrical signal transmission systems, e.g. optical systems
    • G08C23/04—Non-electrical signal transmission systems, e.g. optical systems using light waves, e.g. infrared
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/3827—Portable transceivers
    • H04B1/3833—Hand-held transceivers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver

Definitions

  • the present application relates to an infrared transmitting and receiving circuit, and more particularly to an infrared transmitting and receiving circuit integrated inside an electronic device such as a mobile phone or a tablet computer.
  • Infrared remote control is a remote control device that transmits control signals using an infrared signal with a wavelength between 0.76 and 1.5 ⁇ m. It is widely used in industrial control and home appliances. .
  • the infrared signal is converted by an electrical signal, for example, the presence or absence of infrared light respectively indicates the high and low levels of the electrical signal.
  • the electrical signal ie, the control signal
  • the infrared control code is used to represent a remote control command.
  • the remote command is a string of binary digits
  • the infrared control code represents a remote command in a combination of high and low levels.
  • the NEC protocol format definition a combination of a high level of 0.5625 ms duration and a low level of 0.5625 ms in the infrared control code represents a binary number 0, a high level with a duration of 0.5625 ms and a A combination of low levels with a duration of 1.6875 ms represents a binary number 1.
  • the carrier signal is a square wave signal.
  • the modulation signal formed by modulating the infrared control code onto the carrier in a pulse amplitude modulation (PAM) manner is the control signal.
  • Pulse amplitude modulation means that the high and low levels in the infrared control code are respectively represented by the carrier square wave signal and the low level in the modulated signal.
  • Learning remote control is a general-purpose infrared remote control. After learning the original remote control, the learning remote control has the infrared remote control function of the original remote control. In layman's terms, the learning remote is equivalent to a key blank that can be copied to any shape of key.
  • the learning remote control is divided into two categories: fixed code format learning and waveform copy mode learning.
  • the remote control first collects and classifies the infrared remote control signals used in the market, and then prefabricates a decoding program and a transmitting program for each category.
  • the learning process is: judging the category of the existing infrared remote control signal, selecting the decoding program and the transmitting program of the infrared remote control signal of the category, and storing it in a memory such as an EEPROM.
  • the advantage is that the working frequency of the main control chip and the capacity of the memory are low, and the disadvantage is that only the infrared remote control signal that has been collected beforehand can be learned.
  • a typical representative of this learning remote is HTC's New HTC One mobile phone.
  • the infrared remote control learned by the waveform copy method is completely copied regardless of the format of the infrared remote control signal sent by the original remote controller, and is compressed and stored in the memory.
  • the compressed infrared remote control signal is read out from the memory, and is decompressed and restored to the original infrared remote control signal for transmission.
  • the advantage is that any kind of infrared remote control signal can be learned, and the disadvantage is that the working frequency of the main control chip and the capacity of the memory are relatively high.
  • the typical representative of this learning remote control is the mobile phone OTG learning remote control accessory of Yijia (Shanghai) Information Technology Co., Ltd.
  • the existing infrared remote control for waveform copy mode learning generally adopts an integrated infrared receiving head, which has two disadvantages:
  • the integrated infrared receiver can only receive infrared signals, but not infrared signals.
  • the infrared signal is modulated by the carrier, and the integrated infrared receiver directly filters out the carrier.
  • the infrared remote controller which is learned by the waveform copying method of the integrated infrared receiving head, must supplement the recording of the carrier information by means of auxiliary means after learning.
  • the technical problem to be solved by the present application is to provide an infrared transmitting and receiving circuit which is small in size and capable of recognizing a carrier wave, so that it can be integrated in an intelligent electronic device such as a mobile phone, and can simplify the work of the infrared remote controller which is learned by the waveform copying method.
  • the infrared transmitting and receiving circuit of the present application is composed of an infrared transmitting and receiving circuit, a carrier smoothing circuit and a signal identifying circuit, and is connected to a processor of the electronic device;
  • the infrared transceiver circuit receives an external infrared signal, converts it into an electrical signal, and amplifies and shapes the carrier frequency to form a carrier frequency read signal, and simultaneously outputs the signal to the carrier smoothing circuit and the processor of the electronic device; the infrared transceiver circuit also emits externally An infrared signal converted from a carrier signal output by a processor of the electronic device;
  • the carrier smoothing circuit receives a carrier frequency read signal, filters out the carrier to form a carrier smoothing signal output to the signal identification circuit;
  • the signal recognition circuit receives a carrier smoothing signal and converts the infrared identification signal to a processor of the electronic device;
  • the processor of the electronic device receives the carrier frequency read signal, and analyzes and identifies the carrier frequency of the external infrared signal; the processor of the electronic device further receives the infrared identification signal, and analyzes and learns the infrared control code of the external infrared signal; the electronic device The processor also outputs a control signal to the infrared transceiver circuit for placing the infrared transceiver circuit in a standby state or an operating state; the processor of the electronic device also outputs a carrier signal to the infrared transceiver circuit.
  • the implementation method of the infrared transmitting and receiving circuit of the present application comprises receiving an infrared signal and transmitting an infrared signal;
  • the processor of the electronic device outputs a control signal to the infrared transceiver circuit to make it work
  • the infrared transceiver circuit receives the external infrared signal, converts it into an electrical signal, and amplifies and shapes the signal to form a carrier frequency read signal, and simultaneously outputs the signal to the carrier smoothing circuit and the processor of the electronic device;
  • the carrier smoothing circuit receives the carrier frequency read signal, filters out the carrier to form a carrier smoothing signal output to the signal identification circuit;
  • the processor of the electronic device receives the carrier frequency read signal, and realizes identification of the carrier frequency of the external infrared signal by analyzing the same;
  • step 4 the signal recognition circuit receives the carrier smoothing signal and converts it into an infrared identification signal for output to the processor of the electronic device;
  • the processor of the electronic device further receives the infrared identification signal, and realizes the learning of the infrared control code of the external infrared signal by analyzing the same;
  • the processor of the electronic device outputs a control signal to the infrared transceiver circuit to make it work
  • the processor of the electronic device outputs a carrier signal to the infrared transceiver circuit
  • the infrared transceiver circuit converts the carrier signal from an electrical signal to an infrared signal and transmits the signal to the outside.
  • the infrared transmitting and receiving circuit of the present application implements carrier filtering through a hardware circuit, which can save the processing cost of the processor of the intelligent electronic device, and is more efficient for learning the infrared remote control signal.
  • 1 is a schematic diagram of conversion of a remote control command and an infrared control code, and modulation of an infrared control code to a carrier signal;
  • FIG. 2 is a schematic overall structural view of an infrared transmitting and receiving circuit of the present application
  • FIG. 6 are schematic structural diagrams of specific circuits of two embodiments of the present application.
  • Fig. 7 is a schematic diagram of waveforms of respective signals.
  • the reference numerals in the figure indicate: 10 Infrared transceiver circuit; 20 is carrier smoothing circuit; 30 is signal recognition circuit; 40 is processor of electronic equipment; U1 is infrared transceiver chip; U2 is comparator; Q1 is NPN bipolar transistor; Q2 is PNP bipolar Transistor; D1 is a diode; R1 ⁇ R11 are resistors; C1 ⁇ C4 are capacitors; VCC is the operating voltage; GND is the ground.
  • the infrared transmitting and receiving circuit of the present application is integrated in an electronic device such as a mobile phone or a tablet computer, and is composed of an infrared transmitting and receiving circuit 10, a carrier smoothing circuit 20, and a signal identifying circuit 30.
  • the infrared transceiver circuit 10 receives an external infrared signal on the one hand.
  • Outside Carry Pulse In converts it from an infrared signal into an electrical signal and amplifies and shapes it to form a carrier frequency read signal.
  • the carrier frequency read signal Carry Pulse In is a digital signal and is a modulated signal formed by the modulation of the infrared control code onto the carrier.
  • the infrared transceiver circuit 10 emits an infrared signal on the other hand, and the transmitted infrared signal is an infrared signal converted into a carrier signal PWM Out (electric signal) output by the processor 40 of the electronic device.
  • PWM Out electric signal
  • Carrier smoothing circuit 20 receives the carrier frequency read signal Carry Pulse In, the carrier wave is filtered out to form a carrier smoothing signal Out1, which is output to the signal identification circuit 30.
  • the carrier smoothing signal Out1 is an analog voltage signal, and only the external infrared signal is retained. Pulse In's infrared control code.
  • the signal recognition circuit 30 receives the carrier smoothing signal Out1 and converts it from an analog voltage signal into a square wave signal, that is, an infrared identification signal Pulse. In, output to the processor 40 of the electronic device.
  • the infrared identification signal Pulse In is a digital signal, which is an infrared control code of the outside infrared signal Outside Carry Pulse In.
  • the processor 40 of the electronic device receives the carrier frequency read signal Carry Pulse In, the identification of the carrier frequency of the external infrared signal Outside Carry Pulse In is realized by analyzing it.
  • the processor 40 of the electronic device also receives the infrared identification signal Pulse In, learning the infrared control code of the external infrared signal Outside Carry Pulse In by analyzing it.
  • the processor 40 of the electronic device will external infrared signal Outside Carry Pulse
  • the carrier frequency of In and the infrared control code are saved.
  • the processor 40 of the electronic device may modulate the pre-stored or learned infrared control code onto the carrier of the corresponding frequency to form a carrier signal PWM. Out (this is a modulation signal) is output to the infrared transceiver circuit 10.
  • the processor 40 of the electronic device outputs a control signal Power Down Ctrl to the infrared transceiver circuit 10.
  • the control signal Power The Down Ctrl is used to put the infrared transceiver circuit 10 in an inactive standby state or an active state.
  • the processor 40 of the electronic device also outputs a carrier signal PWM Out to the infrared transceiver circuit 10.
  • the working method of the infrared transmitting and receiving circuit of the present application for receiving an infrared signal is as follows:
  • the processor 40 of the electronic device outputs a control signal to the infrared transceiver circuit 10 Ctrl to make it working.
  • the infrared transceiver circuit 10 receives the external infrared signal Outside Carry Pulse In, it is converted into an electrical signal by an infrared signal and amplified and shaped to form a carrier frequency read signal Carry Pulse In, which is simultaneously output to the carrier smoothing circuit 20 and the processor 40 of the electronic device.
  • step 3 the carrier smoothing circuit 20 receives the carrier frequency read signal Carry Pulse In, the carrier wave is filtered out to form a carrier smoothing signal Out1, which is output to the signal identification circuit 30.
  • the processor 40 of the electronic device receives the carrier frequency read signal Carry Pulse In, the identification of the carrier frequency of the external infrared signal Outside Carry Pulse In is realized by analyzing it.
  • the signal identification circuit 30 receives the carrier smoothing signal Out1 and converts it from the analog voltage signal into a square wave signal, that is, the infrared identification signal Pulse In, and outputs it to the processor 40 of the electronic device.
  • step 5 the processor 40 of the electronic device further receives the infrared identification signal Pulse In, learning the infrared control code of the external infrared signal Outside Carry Pulse In by analyzing it.
  • the processor 40 of the electronic device will emit an external infrared signal Outside Carry Pulse
  • the carrier frequency of In and the infrared control code are saved.
  • the processor 40 of the electronic device can modulate the learned infrared control code onto a carrier of the corresponding frequency to form a carrier signal PWM Out.
  • Carrier signal PWM Out is a modulated signal that is identical to the outside infrared signal Outside Carry Pulse In.
  • the working method of the infrared transmitting and receiving circuit of the present application for transmitting an infrared signal (usually used to simulate the learned infrared remote controller) is as follows:
  • the processor 40 of the electronic device outputs a control signal to the infrared transceiver circuit 10 Ctrl to make it working.
  • the processor 40 of the electronic device outputs a carrier signal PWM Out to the infrared transceiver circuit 10.
  • the infrared transceiver circuit 10 converts the carrier signal PWM Out from an electrical signal into an infrared signal and transmits it externally.
  • the infrared transmitting and receiving circuit 10 is composed of three parts.
  • the infrared transceiver circuit 10 includes an infrared transceiver chip U1, which is a general-purpose integrated infrared transceiver chip RPM872-H12 of ROHM Corporation.
  • the infrared transceiver chip U1 has seven pins, and the LEDA pin is connected to the working voltage VCC and is also grounded through the first capacitor C1.
  • the TX pin is used to receive the carrier signal PWM output of the I/O port of the processor of the electronic device.
  • the RX pin is connected to the I/O port of the processor of the electronic device through the first resistor R1, and outputs a carrier frequency read signal to it. In. Typically, the TX pin is used to transmit the signal and the RX pin is used to receive the signal.
  • the TX pin and RX pin here are conventionally defined relative to the processor of the electronic device.
  • the PowerDown pin receives the control signal from the I/O port of the processor of the electronic device. Down Ctrl. For example, when the Power Down Ctrl signal is high, it means that the infrared transceiver chip U1 enters the standby state. When Power Down When the Ctrl signal is low, it indicates that the infrared transceiver chip U1 is in the working state.
  • the VCC pin is grounded through a third capacitor C3.
  • the VIO pin is grounded through a second capacitor C2. Both the VCC pin and the VIO pin are also connected to the operating voltage VCC (not shown).
  • the GND pin is directly grounded.
  • the carrier smoothing circuit 20 includes an NPN type bipolar transistor Q1.
  • the base of the NPN-type bipolar transistor Q1 receives the carrier frequency read signal output by the infrared transceiver circuit 10 through the second resistor R2. Pulse In.
  • the collector of the NPN-type bipolar transistor Q1 is connected to the operating voltage VCC through a third resistor R3.
  • the emitter of the NPN-type bipolar transistor Q1 is directly grounded.
  • the anode of the diode D1 is connected to the collector of the NPN-type bipolar transistor Q1.
  • the cathode of the diode D1 is grounded through the fourth resistor R4 and the fourth capacitor C4 connected in parallel, and also outputs a carrier smoothing signal Out1.
  • the signal identification circuit 30 includes a comparator chip U2, such as the BU7231G from Rohm Corporation. Single comparator.
  • the comparator chip U2 has five pins, and the In- pin is connected to the cathode of the diode D1 through the fifth resistor R5 to receive the carrier smoothing signal Out1.
  • the In+ pin is grounded through the sixth resistor R6, and is connected to the operating voltage VCC through the seventh resistor R7, and is also connected to the VOUT pin through the eighth resistor R8.
  • the VCC pin is connected to both the operating voltage VCC and the ninth resistor R9 to the VOUT pin.
  • the VOUT pin directly outputs the infrared identification signal Pulse In.
  • the GND pin is directly grounded.
  • the RX pin of the infrared transceiver chip U1 outputs a carrier frequency read signal Carry Pulse In
  • the carrier frequency read signal Carry Pulse In is divided between the base and the emitter of the first resistor R1, the second resistor R2, and the NPN-type bipolar transistor Q1, and is read by the processor of the electronic device.
  • the processor of the electronic device reads the signal by calculating the carrier frequency.
  • the time interval between the two pulses of Pulse In gets the external infrared signal Outside Carry Puls The carrier frequency of In.
  • the first resistor R1 and the second resistor R2 are used to limit the base current of the NPN-type bipolar transistor Q1.
  • the selection of the resistance of the second resistor R2 is based on the receiving carrier frequency of the electronic device.
  • the voltage of the Pulse In interface is required, and the resistance of the second resistor R2 can be zero, and the second resistor R2 can be omitted.
  • the NPN bipolar transistor Q1 can also be replaced by an NMOS transistor.
  • the base, collector and emitter of the NPN bipolar transistor Q1 correspond to the gate, drain and source of the NMOS transistor, respectively. .
  • the carrier frequency reading signal Carry Pulse In, the infrared identification signal Pulse In either directly outputs to the I/O port of the processor of the electronic device, or outputs to the I/O port of the processor of the electronic device through the URAT (Universal Asynchronous Receiver Transmitter) of the electronic device.
  • Carrier signal PWM Out, control signal Power Down The Ctrl is directly output to the infrared transceiver circuit 10 by the I/O port of the processor of the electronic device, or is output to the infrared transceiver circuit 10 through the UAT of the processor of the electronic device through the I/O port of the processor of the electronic device.
  • FIG. 6 This is the second embodiment of the infrared transmitting and receiving circuit of the present application.
  • the infrared transmitting and receiving circuit 10', the carrier smoothing circuit 20', and the signal identifying circuit 30 are composed of three parts.
  • the signal recognition circuit 30 is the same as the first embodiment, but the infrared transceiver circuit 10', the carrier smoothing circuit 20', the connection relationship between the infrared transceiver circuit 10' and the carrier smoothing circuit 20', the carrier smoothing circuit 20' and the signal recognition circuit 30 The connection relationship is different from that of the first embodiment.
  • the infrared transceiver circuit 10' adds a tenth resistor R10 and an eleventh resistor R11 on the basis of the first embodiment.
  • the TX pin of the infrared transceiver chip U1 receives the carrier signal PWM output by the processor of the electronic device through the tenth resistor R10. Out.
  • the RX pin is grounded through the first resistor R1 and the eleventh resistor R11 connected in series, and a carrier frequency read signal Carry Pulse In is output between the first resistor R1 and the eleventh resistor R11.
  • the carrier smoothing circuit 20' includes a PNP type bipolar transistor Q2.
  • the base of the PNP-type bipolar transistor Q2 is connected to the RX pin of the infrared transceiver chip U1 of the infrared transceiver circuit 10' through the second resistor R2, and receives the carrier frequency read signal output by the infrared transceiver circuit 10'. Pulse In.
  • the emitter of the PNP-type bipolar transistor Q2 is connected to the operating voltage VCC.
  • the collector of the PNP-type bipolar transistor Q2 is grounded through a third resistor R3 and a fourth resistor R4 connected in series, and the fourth resistor C4 is also connected in parallel with the fourth capacitor C4.
  • a carrier smoothing signal Out1 is output between the third resistor R3 and the fourth resistor R4.
  • the PNP bipolar transistor Q2 can also be replaced by a PMOS transistor.
  • the base, collector and emitter of the PNP bipolar transistor Q1 correspond to the gate, drain and source of the PMOS transistor, respectively. .
  • the infrared transceiver chip U1 in the infrared transceiver circuit 10 can also adopt other types of integrated infrared transceiver chips, such as Rohm 870 RPM870-H14, RPM871, RPM871-H12, RPM871-H14, RPM872, RPM872. - H14, RPM873, RPM971-H14, RPM972-H14, RPM973-H11, RPM973-H16, and the like.
  • These infrared transceiver chips may be slightly different in pin size from the ROHM RPM872-H12 chip, but may also be used to implement the infrared transceiver circuit 10 based on substantially the same circuit structure.
  • the infrared transceiver circuit 10 may not use the infrared transceiver chip U1, but instead adopts an independent infrared emitting diode and an infrared receiving tube with carrier identification capability, such as TSSK77000, TSMP6000 of VISHAY.
  • the infrared transceiver circuit 10 can also be replaced by a separate infrared emitting diode. Since the infrared transmitting tube has a certain sensing capability for the infrared signal, the infrared current transmitting tube can sense the pulse current of the infrared signal in the air through the discrete device. The amplification process can be used as an infrared receiver.
  • FIG. 7 is a schematic diagram of each signal waveform of the above two embodiments.
  • the Q1 state is an example in which the carrier smoothing circuit 20 of the first embodiment uses the NPN-type bipolar transistor Q1 as an example.
  • the carrier frequency reading signal output by the infrared transceiver chip U1 is Carry Pulse In and Outside Received Infrared Signal Outside Meet Pulse In Meets: When Outside Infrared Signal Outside Carry Pulse When In is low, it means that no external infrared signal is detected, and the carrier frequency read signal Carry Pulse In is high.
  • the carrier frequency read signal Carry Pulse In is also a pulse signal, and the carrier frequency reading signal Carry Pulse The falling edge of In is aligned with the rising edge of the outside infrared signal Outside Carry Pulse In. Limited by the pulse width constraint of the infrared transceiver chip U1, carrier frequency read signal Carry Pulse The low pulse width of In may be less than the high pulse width of the outside infrared signal Outside Carry Pulse In.
  • the NPN bipolar transistor Q1 when there is no external infrared signal Outside Carry Pulse In In, the NPN bipolar transistor Q1 is turned on (high level), its collector is low level, and the diode D1 is turned off, so the voltage across the fourth capacitor C4 is 0, and the carrier smoothing signal Out1 (ie, the fourth capacitor The voltage value is low.
  • the carrier frequency read signal Carry Pulse In tracks the external infrared signal with a falling edge Outside Carry Pulse
  • the NPN type bipolar transistor Q1 is turned off (low level) when the carrier frequency read signal Carry Pulse In is low level, and the NPN type bipolar transistor Q1 reads the signal at the carrier frequency. Pulse When In is high, it is turned on again.
  • the NPN-type bipolar transistor Q1 is turned off, the operating voltage VCC charges the fourth capacitor C4 through the third resistor R3 and the diode D1.
  • the NPN-type bipolar transistor Q1 is turned on, the fourth capacitor C4 is discharged through the fourth resistor R4.
  • the carrier smoothing circuit 20 receives the modulated carrier frequency read signal Carry.
  • Pulse In an alternate charging and discharging analog voltage signal is formed across the fourth capacitor C4, so that the carrier frequency reading signal Carry Pulse In becomes a rippled carrier smoothing signal Out1, which realizes carrier filtering of the external infrared signal Outside Carry Pulse In.
  • the carrier smoothing circuit 20 uses an NMOS transistor instead of the NPN-type bipolar transistor Q1, the NMOS transistor is turned on and off in the same state as the NPN-type bipolar transistor Q1.
  • the operating voltage VCC charges the fourth capacitor C4 when the NMOS transistor is turned off.
  • the fourth capacitor C4 is discharged when the NMOS transistor is turned on.
  • the carrier smoothing circuit 20 uses the PNP-type bipolar transistor Q2 in place of the NPN-type bipolar transistor Q1, and the on-off state of the PNP-type bipolar transistor Q2 is opposite to that of the NPN-type bipolar transistor Q1.
  • the operating voltage VCC charges the fourth capacitor C4 when the PNP-type bipolar transistor Q2 is turned on.
  • the fourth capacitor C4 is discharged when the PNP type bipolar transistor Q2 is turned off.
  • the carrier smoothing circuit 20 uses a PMOS transistor instead of the PNP type bipolar transistor Q2, the on and off states of the PMOS transistor are the same as those of the PNP type bipolar transistor Q2.
  • the operating voltage VCC charges the fourth capacitor C4 when the PMOS transistor is turned on.
  • the fourth capacitor C4 is discharged when the PMOS transistor is turned off.
  • the carrier smoothing circuit 20 outputs a rippled carrier smoothing signal Out1, which cannot be recognized by the processor of the intelligent electronic device. Therefore, it is necessary to appropriately shape the voltage across the fourth capacitor C4.
  • the application uses the comparator chip U2 plus positive feedback to achieve stable and reliable shaping.
  • the voltage across the fourth capacitor C4 is 0, so the IN- pin of the negative input terminal of the comparator chip U2 is low, and the IN+ pin of the positive input terminal is operated through the seventh resistor R7 and the sixth resistor R6.
  • the voltage VCC is divided, the IN+ pin is larger than the IN- pin, and the Vout pin of the comparator chip U2 outputs a high level. Due to the positive feedback through the eighth resistor R8, the high level of the Vout pin is superimposed on the IN+ pin by the voltage division of the eighth resistor R8 and the sixth resistor R6.
  • the ninth resistor R9 is a pull-up resistor of the Vout pin. If a push-pull output or a comparator chip U2 with a pull-up resistor is selected, the ninth resistor R9 may not be connected. At this time, the comparator chip U2 The VCC pin is only connected to the operating voltage VCC.
  • the infrared identification signal Pulse In signal When there is no external infrared signal Outside When Carry Pulse In, the infrared identification signal Pulse In signal is high. When there is an outside infrared signal Outside Carry Pulse In In, the infrared identification signal Pulse In signal is low. Therefore, the infrared identification signal Pulse In signal can be used to characterize the external infrared signal Outside Carry Pulse The presence or absence of In.
  • the processor of the electronic device realizes the infrared remote control code learning of the infrared remote control signal by reading the high-low sequence of the infrared identification signal Pulse_In outputted by the Vout pin.
  • the infrared transmitting and receiving circuit of the present application is integrated in an electronic device such as a mobile phone or a tablet computer, and is connected to a processor of the electronic device.
  • the application implements carrier filtering through the hardware circuit, which can save the processing cost of the processor of the electronic device, and is more efficient for learning the infrared remote control signal.

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Abstract

一种红外发射和接收电路，由红外收发电路、载波平滑电路、信号识别电路三部分所组成。红外收发电路接收外界红外信号，将其转换为电信号并经放大、整形后形成载波频率读取信号；红外收发电路还对外发射红外信号。载波平滑电路接收载波频率读取信号，滤除掉载波形成载波平滑信号输出给信号识别电路。信号识别电路接收载波平滑信号，转换为红外识别信号输出给电子设备的处理器。电子设备的处理器接收载波频率读取信号识别外界红外信号的载波频率；还接收红外识别信号学习外界红外信号的红外控制码。还公开了一种所述红外发射和接收电路的实现方法。较少地占用电子设备的处理器的处理资源，由硬件实现载波的过滤。

Description

红外发射和接收电路及其实现方法 技术领域
本申请涉及一种红外发射和接收电路，特别是涉及一种集成在诸如手机、平板电脑等电子设备内部的红外发射和接收电路。
背景技术
红外遥控器（IR Remote Control）是利用波长为0.76～1.5μm之间的红外信号来传送控制信号的遥控设备， 在工业控制、家电领域的应用广泛 。所述红外信号由电信号转换而来，例如以红外光的有、无分别表示电信号的高、低电平。而所述电信号（即所述控制信号）是红外控制码调制到载波上所形成的调制信号。
所述红外控制码用于表示遥控指令。请参阅图1，遥控指令为一串二进制数字，红外控制码以高、低电平的组合来表示遥控指令。例如NEC协议格式定义：红外控制码中一个持续时间为0.5625ms的高电平与一个持续时间为0.5625ms的低电平的组合表示二进制数字0，一个持续时间为0.5625ms的高电平与一个持续时间为1.6875ms的低电平的组合表示二进制数字1。 载波信号为方波信号。以脉冲调幅（PAM）方式将红外控制码调制到载波上形成的调制信号就是所述控制信号。脉冲调幅是指：红外控制码中的高、低电平分别以调制信号中的载波方波信号、低电平来表示。
学习型遥控器（Self-Learning Remote Control）是一种通用的红外遥控器，在对原遥控器进行学习以后，学习型遥控器就具有原遥控器的红外遥控功能。通俗地说，学习型遥控器相当于钥匙坯子，可以对任意形状的钥匙进行复制。
学习型遥控器 分为两类：固定码格式学习的和波形拷贝方式学习的。
固定码格式学习的红外 遥控器是先对市场上所使用的红外遥控信号进行收集总结和分类，然后对每一类别都预制一种解码程序和发射程序。其学习过程是：判断现有的红外遥控信号的类别、选择该类别红外遥控信号的解码程序和发射程序、存储到诸如EEPROM等存储器中。其优点是对主控芯片的工作频率、存储器的容量的要求低，缺点是只能对事先已收集的红外遥控信号进行学习。这种学习型遥控器的典型代表为HTC公司的New HTC One手机。
波形拷贝方式学习的红外遥控器是不管原遥控器所发出的红外遥控信号是什么格式，将其进行完全拷贝，并经压缩后存储在存储器内。当需要发射时，由存储器内读出压缩的红外遥控信号，经解压后还原为原始的红外遥控信号发射出去。其优点是可以学习任意种类的红外遥控信号，缺点是对主控芯片的工作频率、存储器的容量的要求较高。这种学习型遥控器的典型代表为恬家（上海）信息科技有限公司的手机OTG学习型遥控配件。
现有的波形拷贝方式学习的红外遥控器通常采用一体化的红外接收头，其具有两个缺点：
其一，一体化的红外接收头只能接收红外信号，而不能发射红外信号。
其二，红外信号是通过载波来调制的，一体化的红外接收头直接滤除掉载波。这使得采用一体化的红外接收头的波形拷贝方式学习的红外遥控器在学习后，必须通过辅助手段补充记录载波信息。
 技术问题
本申请所要解决的技术问题是提供一种体积小巧、能够识别载波的红外发射和接收电路，从而可以集成在手机等智能电子设备中，并能简化波形拷贝方式学习的红外遥控器的工作。
技术解决方案
为解决上述技术问题，本申请红外发射和接收电路由红外收发电路、载波平滑电路、信号识别电路三部分所组成，并与电子设备的处理器相连接；
所述红外收发电路接收外界红外信号，将其转换为电信号并经放大、整形后形成载波频率读取信号，同时输出给载波平滑电路和电子设备的处理器；所述红外收发电路还对外发射由电子设备的处理器所输出的载波信号转换而来的红外信号；
所述载波平滑电路接收载波频率读取信号，滤除掉载波形成载波平滑信号输出给信号识别电路；
所述信号识别电路接收载波平滑信号，转换为红外识别信号输出给电子设备的处理器；
电子设备的处理器接收载波频率读取信号，通过对其分析识别外界红外信号的载波频率；电子设备的处理器还接收红外识别信号，通过对其分析学习外界红外信号的红外控制码；电子设备的处理器还向红外收发电路输出控制信号，用于让红外收发电路处于待机状态或工作状态；电子设备的处理器还向红外收发电路输出载波信号。
本申请红外发射和接收电路的实现方法包括接收红外信号、发射红外信号两部分；
在接收红外信号时包括如下步骤：
第1步，电子设备的处理器向红外收发电路输出控制信号使其处于工作状态；
第2步，红外收发电路接收外界红外信号，将其转换为电信号并经放大、整形后形成载波频率读取信号，同时输出给载波平滑电路和电子设备的处理器；
第3步，载波平滑电路接收该载波频率读取信号，滤除掉载波形成载波平滑信号输出给信号识别电路；
电子设备的处理器接收该载波频率读取信号，通过对其分析实现对外界红外信号的载波频率的识别；
第4步，信号识别电路接收该载波平滑信号，并将其转换为红外识别信号输出给电子设备的处理器；
第5步，电子设备的处理器还接收该红外识别信号，通过对其分析实现对外界红外信号的红外控制码的学习；
在发射红外信号时包括如下步骤：
第1步，电子设备的处理器向红外收发电路输出控制信号使其处于工作状态；
第2步，电子设备的处理器向红外收发电路输出载波信号；
第3步，红外收发电路将该载波信号由电信号转换为红外信号并对外发射。
 有益效果
本申请红外发射和接收电路通过硬件电路实现载波过滤，可以节省智能电子设备的处理器的处理成本，且对红外遥控信号的学习更有效率。
附图说明
图1是遥控指令与红外控制码的转换、以及红外控制码调制到载波信号的示意图；
图2是本申请红外发射和接收电路的整体结构示意图；
[根据细则26改正28.07.2014]　
图3是本申请的红外发射和接收电路用于接收红外信号的工作方法流程图；
[根据细则26改正28.07.2014]　
图4是本申请的红外发射和接收电路用于发射红外信号的工作方法流程图；
[根据细则26改正28.07.2014]　
图5、图6分别是本申请的两个实施例的具体电路结构示意图；
[根据细则26改正28.07.2014]　
图7是各信号波形示意图。
图中附图标记说明：10 为红外收发电路；20为载波平滑电路；30为信号识别电路；40为电子设备的处理器；U1为红外收发芯片；U2为比较器；Q1为NPN型双极晶体管；Q2为PNP型双极晶体管；D1为二极管；R1～R11为电阻；C1～C4为电容；VCC为工作电压；GND为接地。
 本发明的实施方式
请参阅图2，本申请红外发射和接收电路集成在诸如手机、平板电脑等电子设备内部，由红外收发电路10、载波平滑电路20、信号识别电路30三部分所组成。
红外收发电路10一方面接收外界红外信号Outside Carry Pulse In，将其由红外信号转换为电信号并经放大、整形后形成载波频率读取信号Carry Pulse In，同时输出给载波平滑电路20和电子设备的处理器40。该载波频率读取信号Carry Pulse In是一个数字信号，并且是红外控制码调制到载波上所形成的调制信号。
红外收发电路10另一方面对外发射红外信号，所发射的红外信号是根据电子设备的处理器40所输出的载波信号PWM Out（电信号）转换为的红外信号。
载波平滑电路20接收该载波频率读取信号Carry Pulse In，滤除掉其中的载波形成载波平滑信号Out1，输出给信号识别电路30。该载波平滑信号Out1是模拟电压信号，只保留了外界红外信号Outside Carry Pulse In的红外控制码。
信号识别电路30接收该载波平滑信号Out1，并将其由模拟电压信号转换为方波信号即红外识别信号Pulse In，输出给电子设备的处理器40。该红外识别信号Pulse In是数字信号，就是外界红外信号Outside Carry Pulse In的红外控制码。
电子设备的处理器40接收该载波频率读取信号Carry Pulse In，通过对其分析实现对外界红外信号Outside Carry Pulse In的载波频率的识别。电子设备的处理器40还接收该红外识别信号Pulse In，通过对其分析实现对外界红外信号Outside Carry Pulse In的红外控制码的学习。电子设备的处理器40将外界红外信号Outside Carry Pulse In的载波频率、红外控制码予以保存。在需要时，电子设备的处理器40可以将预先保存的、或通过学习得到的红外控制码调制到相应频率的载波上，形成载波信号PWM Out（这是一个调制信号）输出给红外收发电路10。
电子设备的处理器40向红外收发电路10输出控制信号Power Down Ctrl。该控制信号Power Down Ctrl用于让红外收发电路10处于不工作的待机状态、或工作状态。电子设备的处理器40还向红外收发电路10输出载波信号PWM Out。
请参阅图3，本申请的红外发射和接收电路用于接收红外信号（通常用于学习其他红外遥控器）的工作方法为：
第1步，电子设备的处理器40向红外收发电路10输出控制信号Power Down Ctrl使其处于工作状态。
第2步，红外收发电路10接收外界红外信号Outside Carry Pulse In，将其由红外信号转换为电信号并经放大、整形后形成载波频率读取信号Carry Pulse In，同时输出给载波平滑电路20和电子设备的处理器40。
第3步，载波平滑电路20接收该载波频率读取信号Carry Pulse In，滤除掉其中的载波形成载波平滑信号Out1，输出给信号识别电路30。
电子设备的处理器40接收该载波频率读取信号Carry Pulse In，通过对其分析实现对外界红外信号Outside Carry Pulse In的载波频率的识别。
第4步，信号识别电路30接收该载波平滑信号Out1，并将其由模拟电压信号转换为方波信号即红外识别信号Pulse In，输出给电子设备的处理器40。
第5步，电子设备的处理器40还接收该红外识别信号Pulse In，通过对其分析实现对外界红外信号Outside Carry Pulse In的红外控制码的学习。
电子设备的处理器40将外界红外信号Outside Carry Pulse In的载波频率、红外控制码予以保存。在需要时，电子设备的处理器40可以将学习得到的红外控制码调制到相应频率的载波上，形成载波信号PWM Out。载波信号PWM Out是一个调制信号，与外界红外信号Outside Carry Pulse In相同。
请参阅图4，本申请的红外发射和接收电路用于发射红外信号（通常用于模拟所学习的红外遥控器）的工作方法为：
第1步，电子设备的处理器40向红外收发电路10输出控制信号Power Down Ctrl使其处于工作状态。
第2步，电子设备的处理器40向红外收发电路10输出载波信号PWM Out。
第3步，红外收发电路10将该载波信号PWM Out由电信号转换为红外信号并对外发射。
请参阅图5，这是本申请红外发射和接收电路的实施例一，由红外收发电路10、载波平滑电路20、信号识别电路30三部分所组成。
所述红外收发电路10包括一个红外收发芯片U1，这是ROHM公司的一款通用的一体化红外收发芯片RPM872-H12。该红外收发芯片U1具有七个引脚，LEDA引脚既连接工作电压VCC，还通过第一电容C1接地。TX引脚用于接收电子设备的处理器的I/O口输出的载波信号PWM Out。RX引脚通过第一电阻R1连接电子设备的处理器的I/O口，并向其输出载波频率读取信号Carry Pulse In。通常，TX引脚用于发射信号，RX引脚用于接收信号，此处的TX引脚、RX引脚相对于电子设备的处理器而言符合传统定义。PowerDown引脚接收电子设备的处理器的I/O口输出的控制信号Power Down Ctrl。例如，当Power Down Ctrl信号为高电平时，表示让红外收发芯片U1进入待机状态。当Power Down Ctrl信号为低电平时，表示让红外收发芯片U1进入工作状态。VCC引脚通过第三电容C3接地。VIO引脚通过第二电容C2接地。VCC引脚、VIO引脚均还连接到工作电压VCC（未图示）。GND引脚直接接地。
所述载波平滑电路20包括一个NPN型双极晶体管Q1。该NPN型双极晶体管Q1的基极通过第二电阻R2接收红外收发电路10输出的载波频率读取信号Carry Pulse In。该NPN型双极晶体管Q1的集电极通过第三电阻R3连接工作电压VCC。该NPN型双极晶体管Q1的发射极直接接地。二极管D1的正极连接该NPN型双极晶体管Q1的集电极。该二极管D1的负极既通过并联的第四电阻R4和第四电容C4接地，还输出载波平滑信号Out1。
所述信号识别电路30包括一个比较器芯片U2，例如采用Rohm公司的 BU7231G 单路比较器。该比较器芯片U2具有五个引脚，In-引脚通过第五电阻R5连接所述二极管D1的负极，接收载波平滑信号Out1。In+引脚既通过第六电阻R6接地，还通过第七电阻R7连接工作电压VCC，还通过第八电阻R8连接VOUT引脚。VCC引脚既连接工作电压VCC，还通过第九电阻R9连接VOUT引脚。VOUT引脚直接输出红外识别信号Pulse In。GND引脚直接接地。
在实施例一中，红外收发芯片U1的RX引脚输出载波频率读取信号Carry Pulse In，该载波频率读取信号Carry Pulse In通过第一电阻R1、第二电阻R2、NPN型双极晶体管Q1的基极和发射极之间进行分压，并被电子设备的处理器读取。电子设备的处理器通过计算该载波频率读取信号Carry Pulse In的两个脉冲之间的时间间隔得到外界红外信号Outside Carry Puls In的载波频率。其中的第一电阻R1、第二电阻R2用来限制NPN型双极晶体管Q1的基极电流。第二电阻R2阻值的选择依据电子设备的接收载波频率读取信号Carry Pulse In的接口对信号电压的要求，第二电阻R2的阻值可以为零即可以省略第二电阻R2。
在实施例一中，所述NPN型双极晶体管Q1也可以替换为NMOS晶体管，NPN型双极晶体管Q1的基极、集电极、发射极分别对应于NMOS晶体管的栅极、漏极、源极。
在实施例一中，载波频率读取信号Carry Pulse In、红外识别信号Pulse In或者直接输出到电子设备的处理器的I/O口，或者通过电子设备的URAT（通用异步收发器的）输出到电子设备的处理器的I/O口。载波信号PWM Out、控制信号Power Down Ctrl或者是由电子设备的处理器的I/O口直接输出给红外收发电路10，或者是由电子设备的处理器的I/O口通过电子设备的URAT输出给红外收发电路10。
请参阅图6，这是本申请红外发射和接收电路的实施例二，由红外收发电路10'、载波平滑电路20'、信号识别电路30三部分所组成。其中的信号识别电路30与实施例一相同，但红外收发电路10'、载波平滑电路20'、红外收发电路10'与载波平滑电路20'的连接关系、载波平滑电路20'与信号识别电路30的连接关系与实施例一不同。
所述红外收发电路10'在实施例一的基础上增加了第十电阻R10和第十一电阻R11。红外收发芯片U1的TX引脚通过第十电阻R10接收电子设备的处理器输出的载波信号PWM Out。RX引脚通过串联的第一电阻R1和第十一电阻R11接地，并在第一电阻R1和第十一电阻R11之间输出载波频率读取信号Carry Pulse In。
所述载波平滑电路20'包括一个PNP型双极晶体管Q2。该PNP型双极晶体管Q2的基极通过第二电阻R2连接红外收发电路10'中红外收发芯片U1的RX引脚，接收红外收发电路10'输出的载波频率读取信号Carry Pulse In。该PNP型双极晶体管Q2的发射极连接工作电压VCC。该PNP型双极晶体管Q2的集电极通过串联的第三电阻R3和第四电阻R4接地，第四电阻R4还并联着第四电容C4。第三电阻R3和第四电阻R4之间输出载波平滑信号Out1。
在实施例二中，所述PNP型双极晶体管Q2也可以替换为PMOS晶体管，PNP型双极晶体管Q1的基极、集电极、发射极分别对应于PMOS晶体管的栅极、漏极、源极。
以上两个实施例中，红外收发电路10中的红外收发芯片U1也可采用其他型号的一体化红外收发芯片，例如Rohm公司的RPM870-H14、RPM871、RPM871-H12、RPM871-H14、RPM872、RPM872-H14、RPM873、RPM971-H14、RPM972-H14、RPM973-H11、RPM973-H16等。这些红外收发芯片与ROHM公司RPM872-H12芯片在引脚上可能略有差异，但基于大致相同的电路结构也可用于实现红外收发电路10的目的。或者，红外收发电路10也可以不采用红外收发芯片U1，而改为采用独立的红外发射二极管和具备载波识别能力的红外接收管，比如VISHAY公司的TSMP77000，TSMP6000等。或者，红外收发电路10也可以改为采用单独的红外发射二极管作为发射，由于红外发射管对红外信号也有一定的感知能力，可以通过分立器件将红外发射管对空气中的红外信号的感知脉冲电流放大处理可以作为红外接收管使用。
请参阅图7，这是以上两个实施例的各信号波形示意图。其中Q1状态是以实施例一的载波平滑电路20采用NPN型双极晶体管Q1为例。
对于红外收发电路10而言，红外收发芯片U1输出的的载波频率读取信号Carry Pulse In与其接收的外界红外信号Outside Carry Pulse In满足：当外界红外信号Outside Carry Pulse In为低电平时，表示没有检测到外界的红外信号，载波频率读取信号Carry Pulse In为高电平。当外界红外信号Outside Carry Pulse In为脉冲信号时，表示检测到外界的红外信号，载波频率读取信号Carry Pulse In也为脉冲信号，且载波频率读取信号Carry Pulse In的下降沿与外界红外信号Outside Carry Pulse In的上升沿相对齐。受限于红外收发芯片U1的脉宽约束，载波频率读取信号Carry Pulse In的低电平脉宽可能小于外界红外信号Outside Carry Pulse In的高电平脉宽。
对实施例一的载波平滑电路20而言，当没有外界红外信号Outside Carry Pulse In时，NPN型双极晶体管Q1导通（高电平），其集电极为低电平，二极管D1截止，因此第四电容C4两端的电压为0，载波平滑信号Out1（即第四电容的电压值）为低电平。当有外界红外信号Outside Carry Pulse In时，载波频率读取信号Carry Pulse In以下降沿跟踪外界红外信号Outside Carry Pulse In的上升沿，NPN型双极晶体管Q1在载波频率读取信号Carry Pulse In为低电平时截止（低电平），NPN型双极晶体管Q1在载波频率读取信号Carry Pulse In为高电平时又导通。在NPN型双极晶体管Q1截止时，工作电压VCC通过第三电阻R3和二极管D1对第四电容C4充电。当NPN型双极晶体管Q1导通时，第四电容C4通过第四电阻R4放电。通过所述第三电阻R3和第四电阻R4的阻值选择，能保证每个周期内充电电量大于放电电量，因此所述第四电容C4两端电压能够累积上升。因此在载波平滑电路20接收到调制载波频率读取信号Carry Pulse In时，在第四电容C4两端形成了一个交替充放电的模拟电压信号，从而将载波频率读取信号Carry Pulse In变成一个带纹波的的载波平滑信号Out1，实现了对外界红外信号Outside Carry Pulse In的载波滤除。
在实施例一中，如果载波平滑电路20采用NMOS晶体管取代NPN型双极晶体管Q1，那么NMOS晶体管导通、截止状态与NPN型双极晶体管Q1相同。在NMOS晶体管截止时工作电压VCC对第四电容C4充电。当NMOS晶体管导通时第四电容C4放电。
在实施例二中，载波平滑电路20采用PNP型双极晶体管Q2取代NPN型双极晶体管Q1，PNP型双极晶体管Q2的导通、截止状态与NPN型双极晶体管Q1相反。在PNP型双极晶体管Q2导通时工作电压VCC对第四电容C4充电。当PNP型双极晶体管Q2截止时第四电容C4放电。
在实施例二中，如果载波平滑电路20采用PMOS晶体管取代PNP型双极晶体管Q2，PMOS晶体管的导通、截止状态与PNP型双极晶体管Q2相同。在PMOS晶体管导通时工作电压VCC对第四电容C4充电。当PMOS晶体管截止时第四电容C4放电。
载波平滑电路20输出的是带纹波的载波平滑信号Out1，无法被智能电子设备的处理器所识别，因此需要对第四电容C4两端的电压做适当的整形。本申请采用比较器芯片U2加正反馈的方式实现了稳定可靠的整形。
对于信号识别电路30而言，没有外界红外信号Outside Carry Pulse In时，第四电容C4两端的电压为0，因此比较器芯片U2的负输入端IN-引脚为低电平，正输入端IN+引脚为通过第七电阻R7和第六电阻R6对工作电压VCC的分压，IN+引脚大于IN-引脚，比较器芯片U2的Vout引脚输出高电平。由于通过第八电阻R8的正反馈，Vout引脚的高电平通过第八电阻R8和第六电阻R6的分压叠加在IN+引脚上。当有外界红外信号Outside Carry Pulse In时，第四电容C4的两端电压超过了IN+引脚的电压，比较器芯片U2的Vout引脚输出低电平。同时由于正反馈，IN+引脚的电压被拉低，从而很快实现了电平的翻转，从而降低了因为第四电容C4两端的纹波而导致的Vout引脚出现输出干扰的风险。第九电阻R9为Vout引脚的上拉电阻，如果选择有推挽输出（push-pull）或者内部有上拉电阻的比较器芯片U2，第九电阻R9可以不接，此时比较器芯片U2的VCC引脚仅连接工作电压VCC。当没有外界红外信号Outside Carry Pulse In时，红外识别信号Pulse In信号为高电平。当有外界红外信号Outside Carry Pulse In时，红外识别信号Pulse In信号为低电平。因此，红外识别信号Pulse In信号可以用来表征外界红外信号Outside Carry Pulse In的有无。电子设备的处理器通过读取Vout引脚输出的红外识别信号Pulse_In的高低电平序列，从而实现了对红外遥控信号的红外遥控码学习。
以上仅为本申请的优选实施例，并不用于限定本申请。对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。
 工业实用性
本申请红外发射和接收电路集成在诸如手机、平板电脑等电子设备内部，并与电子设备的处理器相连接。本申请通过硬件电路实现载波过滤，可以节省电子设备的处理器的处理成本，且对红外遥控信号的学习更有效率。

Claims (9)

  1. 一种红外发射和接收电路，其特征是，由红外收发电路、载波平滑电路、信号识别电路三部分所组成，并与电子设备的处理器相连接；
    所述红外收发电路接收外界红外信号，将其转换为电信号并经放大、整形后形成载波频率读取信号，同时输出给载波平滑电路和电子设备的处理器；所述红外收发电路还对外发射由电子设备的处理器所输出的载波信号转换而来的红外信号；
    所述载波平滑电路接收载波频率读取信号，滤除掉载波形成载波平滑信号输出给信号识别电路；
    所述信号识别电路接收载波平滑信号，转换为红外识别信号输出给电子设备的处理器；
    电子设备的处理器接收载波频率读取信号，通过对其分析识别外界红外信号的载波频率；电子设备的处理器还接收红外识别信号，通过对其分析学习外界红外信号的红外控制码；电子设备的处理器还向红外收发电路输出控制信号，用于让红外收发电路处于待机状态或工作状态；电子设备的处理器还向红外收发电路输出载波信号。
  2. 根据权利要求1所述的红外发射和接收电路，其特征是，
    所述红外收发电路包括一个红外收发芯片，该红外收发芯片具有7个引脚；LEDA引脚既连接工作电压，还通过第一电容接地；TX引脚接收电子设备的处理器发送的载波信号；RX引脚通过第一电阻向载波平滑电路和电子设备的处理器输出载波频率读取信号；PowerDown引脚接收电子设备的处理器发送的控制信号；VCC引脚通过第三电容接地；VIO引脚通过第二电容接地；VCC引脚和VIO引脚还均连接工作电压；GND引脚直接接地；
    所述载波平滑电路包括一个NPN型双极晶体管；该NPN型双极晶体管的基极通过串联的第二电阻和第一电阻连接红外收发芯片的RX引脚接收载波频率读取信号；该双极晶体管的集电极既通过第三电阻连接工作电压VCC，还连接一个二极管的正极；该二极管的负极既向信号识别电路输出载波平滑信号，还通过并联的第四电阻和第四电容接地；该NPN型双极晶体管的发射极直接接地；
    所述信号识别电路包括一个比较器芯片，该比较器芯片具有5个引脚；负输入端In-引脚通过第五电阻连接所述二极管的负极接收载波平滑信号；正输入端In+引脚既通过第六电阻接地，还通过第七电阻连接工作电压，还通过第八电阻连接Pulse In信号；VCC引脚既连接工作电压，还通过第九电阻连接Pulse In信号；输出端VOUT引脚直接向电子设备的处理器的输出红外识别信号；GND引脚直接接地。
  3. 根据权利要求1所述的红外发射和接收电路，其特征是，
    所述红外收发电路包括一个红外收发芯片，该红外收发芯片具有7个引脚；LEDA引脚既连接工作电压，还通过第一电容接地；TX引脚通过第十电阻接收电子设备的处理器发送的载波信号；RX引脚直接向载波平滑电路和输出载波频率读取信号，还通过第一电阻向电子设备的处理器输出载波频率读取信号，还通过串联的第一电阻和第十一电阻接地；PowerDown引脚接收电子设备的处理器发送的控制信号；VCC引脚通过第三电容接地；VIO引脚通过第二电容接地；VCC引脚和VIO引脚还均连接工作电压；GND引脚直接接地；
    所述载波平滑电路包括一个PNP型双极晶体管；该PNP型双极晶体管的基极通过第二电阻连接红外收发芯片的RX引脚接收载波频率读取信号；该PNP型双极晶体管的集电极既通过第三电阻向信号识别电路输出载波平滑信号，还通过串联的第三电阻和第四电阻接地，第四电阻还并联着第四电容；该PNP型双极晶体管的发射极连接工作电压VCC；
    所述信号识别电路包括一个比较器芯片，该比较器芯片具有5个引脚；负输入端In-引脚通过第五电阻连接所述第四电容的非接地端接收载波平滑信号；正输入端In+引脚既通过第六电阻接地，还通过第七电阻连接工作电压，还通过第八电阻连接Pulse In信号；VCC引脚既连接工作电压，还通过第九电阻连接Pulse In信号；输出端VOUT引脚直接向电子设备的处理器输出红外识别信号；GND引脚直接接地。
  4. 根据权利要求2或3所述的红外发射和接收电路，其特征是，第二电阻的阻值为零，即以导线替代第二电阻 。
  5. 根据权利要求2或3所述的红外发射和接收电路，其特征是，当比较器芯片具有推挽输出或内部具有推拉电阻时，省略第九电阻；此时比较器芯片的VCC引脚仅连接工作电压。
  6. 根据权利要求2所述的红外发射和接收电路，其特征是，所述NPN型双极晶体管被替换为NMOS晶体管，NPN型双极晶体管的基极、集电极、发射极分别对应于NMOS晶体管的栅极、漏极、源极。
  7. 根据权利要求3所述的红外发射和接收电路，其特征是，所述PNP型双极晶体管被替换为PMOS晶体管，PNP型双极晶体管的基极、集电极、发射极分别对应于PMOS晶体管的栅极、漏极、源极。
  8. 一种红外发射和接收电路的实现方法，其特征是，包括接收红外信号、发射红外信号两部分；
    在接收红外信号时包括如下步骤：
    第1步，电子设备的处理器向红外收发电路输出控制信号使其处于工作状态；
    第2步，红外收发电路接收外界红外信号，将其转换为电信号并经放大、整形后形成载波频率读取信号，同时输出给载波平滑电路和电子设备的处理器；
    第3步，载波平滑电路接收该载波频率读取信号，滤除掉载波形成载波平滑信号输出给信号识别电路；
    电子设备的处理器接收该载波频率读取信号，通过对其分析实现对外界红外信号的载波频率的识别；
    第4步，信号识别电路接收该载波平滑信号，并将其转换为红外识别信号输出给电子设备的处理器；
    第5步，电子设备的处理器还接收该红外识别信号，通过对其分析实现对外界红外信号的红外控制码的学习；
    在发射红外信号时包括如下步骤：
    第1步，电子设备的处理器向红外收发电路输出控制信号使其处于工作状态；
    第2步，电子设备的处理器向红外收发电路输出载波信号；
    第3步，红外收发电路将该载波信号由电信号转换为红外信号并对外发射。
  9. 根据权利要求8所述的红外发射和接收电路的实现方法，其特征是，在接收红外信号时还包括第6步，电子设备的处理器将外界红外信号的载波频率、红外控制码予以保存，并将预先保存的、或通过学习得到的红外控制码调制到载波上形成载波信号。
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