WO2014206163A1 - Method for manufacturing p-type semiconductor element for refrigeration or heating device - Google Patents
Method for manufacturing p-type semiconductor element for refrigeration or heating device Download PDFInfo
- Publication number
- WO2014206163A1 WO2014206163A1 PCT/CN2014/078440 CN2014078440W WO2014206163A1 WO 2014206163 A1 WO2014206163 A1 WO 2014206163A1 CN 2014078440 W CN2014078440 W CN 2014078440W WO 2014206163 A1 WO2014206163 A1 WO 2014206163A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type semiconductor
- parts
- refrigeration
- cylinder
- manufacturing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000010438 heat treatment Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000005057 refrigeration Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 229910052797 bismuth Inorganic materials 0.000 claims abstract 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract 8
- 229910052714 tellurium Inorganic materials 0.000 claims abstract 8
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract 8
- 229910052787 antimony Inorganic materials 0.000 claims abstract 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract 7
- 239000013078 crystal Substances 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 238000003723 Smelting Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 238000005496 tempering Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 5
- XCOKHDCPVWVFKS-UHFFFAOYSA-N tellurium tetraiodide Chemical compound I[Te](I)(I)I XCOKHDCPVWVFKS-UHFFFAOYSA-N 0.000 claims 2
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000000227 grinding Methods 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 description 12
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GUMZVBJNPFEQDA-UHFFFAOYSA-J [I-].[I-].[I-].[I-].[Ce+4] Chemical compound [I-].[I-].[I-].[I-].[Ce+4] GUMZVBJNPFEQDA-UHFFFAOYSA-J 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
Definitions
- the present invention relates to a method of fabricating a P-type semiconductor device for a cooling or heating device, and belongs to the field of semiconductor fabrication technology.
- P-type semiconductors and N-type semiconductors are widely used in the field of manufacturing semiconductor refrigeration or heating devices by generating different temperatures of hot and cold ends at both ends when energized.
- a trivalent element such as boron
- a pure silicon crystal to replace the position of the silicon atom in the crystal lattice, thereby forming a P-type. semiconductor.
- the P-type semiconductor device produced by the conventional method is mainly used in the production of a cooling or heating device, and the P-type semiconductor element mainly has a small temperature difference at both ends (the temperature difference between the hot end and the cold end) Generally, it is about 60 degrees), the efficiency of cooling or heating is low, and the energy consumption is large.
- the existing P-type semiconductor components cannot be distinguished from the head end and the tail end, so that they are used for making refrigeration.
- heating devices are used, the connection between them is not possible to achieve an orderly connection between the head and the tail, but the head and tail are connected to each other in a chaotic manner, so that the power conversion efficiency of the semiconductor element cannot be effectively utilized, and the working efficiency is lowered. Therefore, the use of existing P-type semiconductor elements for cooling or heating devices is still not satisfactory.
- the object of the present invention is to provide a method for fabricating a P-type semiconductor device for a cooling or heating device which has a large temperature difference at both ends during operation, a high working efficiency, and a low energy consumption, thereby overcoming the deficiencies of the prior art.
- a method for fabricating a P-type semiconductor device for a cooling or heating device according to the present invention is that the P-type semiconductor device is made of a ruthenium, osmium, and iridium material, and first, ⁇ , ⁇ , ⁇ The material is pulverized and ground to 2000 mesh or more, and then the materials are compounded according to the proportion by weight, and the ratio is: ⁇ 50 ⁇ 60 parts, ⁇ 15 ⁇ 20 parts, ⁇ 25 ⁇ 30
- the mixture is uniformly mixed, placed in a glass tube for smelting, and the glass tube is dried together, then pulled and vacuumed, and then the glass tube containing the mixture is placed in a swinging furnace.
- the melting temperature is controlled at 650 ⁇ 750 °C, the melting time is controlled at 15 ⁇ 25 minutes, then the glass tube is taken out from the swinging furnace and naturally cooled at room temperature; However, the glass tube material is placed vertically in a crystal pulling furnace for crystal pulling treatment.
- the pulling temperature is 600 ⁇ 750 °C, and the crystal pulling is performed at a speed of 2 to 3 cm per hour.
- the pulling time is controlled at 16 ⁇ 20.
- the P-type semiconductor ingot can be obtained, and the obtained P-type semiconductor ingot can be sliced, cut and granulated to obtain a P-type semiconductor element.
- the preferred ratio of each of the above materials in parts by weight is: ⁇ 52 to 58 parts, ⁇ 16 to 19 parts, ⁇ 26 to 28 parts.
- the optimum ratio of each of the above materials in parts by weight is: ⁇ 55 parts, ⁇ 17.2 parts, ⁇ 27.8 parts.
- the P-type semiconductor ingot obtained above is a cone-shaped ingot having a large diameter and a small diameter at the other end, and the cone-shaped P-type semiconductor ingot is sliced to obtain a wafer having the same thickness, and the small diameter end of the wafer is the head end.
- the large diameter end is the tail end, and the color mark number is marked on the tail end surface of each wafer; then the conical surface of each wafer is cut and granulated by the numerical control dicing method, and each wafer is cut and granulated into the same
- the polygonal cylinder shape, the polygonal cylinder-shaped P-type semiconductor is a P-type semiconductor element dedicated to semiconductor refrigeration or heating devices.
- the above polygonal cylinder is a quadrangular cylinder, a square cylinder, a regular hexagon cylinder, a regular octagonal cylinder, a regular decagon cylinder or a regular dodecagonal cylinder.
- the above glass tube for smelting has a length of 85 to 100 cm.
- the present invention is directed to a P-type semiconductor component dedicated to a cooling or heating device by using a special formulation and a manufacturing process for the characteristics of the cooling or heating device, compared with the prior art.
- the P-type semiconductor device of the present invention has a large temperature difference at both ends during operation, and the P-type semiconductor device of the present invention has a temperature difference of about 73 to 78 degrees at the cold end and the hot end during operation, so the present invention has a work.
- the tails are arranged in an orderly arrangement, thereby avoiding the phenomenon in which the head and the tail are confused with each other when the P-type semiconductor elements are connected in the prior art because the head end and the tail end cannot be distinguished.
- the P-type semiconductor device of the present invention can conveniently perform the head end and the tail end when manufacturing a cooling or heating device
- the orderly connection effectively exerts the working efficiency of all semiconductor components and effectively improves the cooling or heating effect of the entire device.
- a method for fabricating a P-type semiconductor device for a cooling or heating device according to the present invention is: the P-type semiconductor device is made of a ruthenium, osmium, and iridium material, and the ruthenium, osmium, and iridium materials are first used.
- the ratio is: ⁇ 50 ⁇ 60 parts, ⁇ 15 ⁇ 20 parts, ⁇ 25 ⁇ 30 parts
- the neck is pulled and evacuated according to the traditional pulling neck and vacuuming method, and then the glass tube containing the mixture is placed in a rocking furnace for vacuum swing melting, and the melting temperature is controlled at 650 to 750 °C.
- the smelting time is controlled for 15 ⁇ 25 minutes, then the glass tube is taken out from the swinging furnace and naturally cooled at room temperature; the naturally cooled glass tube strip is vertically placed in a crystal pulling furnace for crystal pulling treatment, and the pulling temperature is 6 00 ⁇ 750 °C, pulling at a speed of 2 ⁇ 3 cm per hour, the pulling time is controlled at 16 ⁇ 20 hours, and the P-type semiconductor ingot can be obtained after the completion of the crystal pulling, and the obtained P-type After the semiconductor ingot is sliced, cut and granulated, a P-type semiconductor element can be produced.
- the preferred ratio of each of the above materials in parts by weight is: ⁇ 52 to 58 parts, ⁇ 16 to 19 parts, ⁇ 26 to 28 parts.
- the optimum ratio of each of the above materials in parts by weight is: ⁇ 55 parts, ⁇ 17.2 parts, ⁇ 27.8 parts.
- a tetraiodide material for quenching and tempering may be added to the mixture, and the amount of the cerium tetraiodide may be controlled to 0% of the total weight of the mixture according to the needs of use. 009 ⁇ 0. 1 times the range.
- the P-type semiconductor ingot is made into a cone-shaped ingot with a large diameter and a small diameter at the other end (the diameter of the small-diameter end can be determined according to the needs of use, and the diameter of the small-diameter end is usually not less than 10 Millimeter, its taper can be controlled between 2 and 5 degrees), of course
- the cone-shaped P-type semiconductor ingot is sliced into a wafer of the same thickness by a conventional slicing tool, and the small diameter end of the wafer is a head end, and the large diameter end is a tail end, and a color made of a conductive material is used (if A material such as copper, aluminum or silver is made into a color material.
- the color mark number is printed on the tail end surface of each wafer; then the conical surface of each wafer is cut and granulated by a conventional numerical control dicing method, and each wafer is processed. Both are cut and granulated into the same polygonal cylinder shape, and the polygonal pillar-shaped P-type semiconductor is a P-type semiconductor element dedicated to semiconductor refrigeration or heating devices.
- the above-mentioned polygonal cylinder can be made into a quadrangular cylinder, a square cylinder, a regular hexagonal cylinder, a regular octagonal cylinder, a regular decagon cylinder or a regular dodecagonal cylinder according to the needs of use.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A method for manufacturing a P-type semiconductor element for a refrigeration or heating device. The method is characterized in that the P-type semiconductor element is made of tellurium material, bismuth material and antimony material. The method comprises: firstly, smashing and grinding the tellurium material, the bismuth material and the antimony material to enable the size thereof to be 2000 meshes or more than 2000 meshes; and then, according to the proportion of each material in parts by weight, conducting proportioning on the materials to obtain a mixture, wherein the proportion thereof is 50 to 60 parts of tellurium, 15 to 20 parts of bismuth and 25 to 30 parts of antimony. When the P-type semiconductor element is in operation, the temperature difference between both ends thereof is larger, and through a test, when the P-type semiconductor element is in operation, the temperature difference between the cold end and the hot end thereof reaches about 73°C to 78°C. Therefore, the P-type semiconductor element has the advantages of high operation efficiency and lower energy consumption. The P-type semiconductor element is particularly suitable for being used to manufacture a refrigeration or heating device of a semiconductor.
Description
用于制冷或制热器件的 P型半导体元件制作方法 技术领域 P-type semiconductor device manufacturing method for cooling or heating device
本发明涉及一种用于制冷或制热器件的 P型半导体元件制作方法， 属于 半导体制作技术领域。 The present invention relates to a method of fabricating a P-type semiconductor device for a cooling or heating device, and belongs to the field of semiconductor fabrication technology.
背景技术 Background technique
利用 P型半导体和 N型半导体在通电时即可在其两端产生热端和冷端不 同温度的特点， 已被广泛地应用在制作半导体制冷或制热器件领域中。 目 前， 在现有技术中， 在制作 P型半导体时， 通常是采用在纯净的硅晶体中 掺入三价元素 （如硼） ， 使之取代晶格中硅原子的位置， 就形成了 P型半 导体。 用这种传统方法制作得到的 P型半导体元件， 在将其用于制作制冷 或制热器件时， 这种 P型半导体元件主要存在着两端的温差较小 （其热端 与冷端两端的温差一般为 60度左右） 、 制冷或制热的效率较低、 能耗较 大等问题； 此外， 现有的 P型半导体元件因无法区分其头端与尾端， 这样 在将其用于制作制冷或制热器件时， 其相互之间的连接， 不可实现头尾有 序的连接， 而是头尾相互混乱连接， 因此不能有效地发挥半导体元件的电 能转换效率， 使其工作效率降低。 所以现有的用于制冷或制热器件的 P型 半导体元件的使用效果还是不够理想。 P-type semiconductors and N-type semiconductors are widely used in the field of manufacturing semiconductor refrigeration or heating devices by generating different temperatures of hot and cold ends at both ends when energized. At present, in the prior art, when a P-type semiconductor is fabricated, a trivalent element (such as boron) is usually incorporated into a pure silicon crystal to replace the position of the silicon atom in the crystal lattice, thereby forming a P-type. semiconductor. The P-type semiconductor device produced by the conventional method is mainly used in the production of a cooling or heating device, and the P-type semiconductor element mainly has a small temperature difference at both ends (the temperature difference between the hot end and the cold end) Generally, it is about 60 degrees), the efficiency of cooling or heating is low, and the energy consumption is large. In addition, the existing P-type semiconductor components cannot be distinguished from the head end and the tail end, so that they are used for making refrigeration. When heating devices are used, the connection between them is not possible to achieve an orderly connection between the head and the tail, but the head and tail are connected to each other in a chaotic manner, so that the power conversion efficiency of the semiconductor element cannot be effectively utilized, and the working efficiency is lowered. Therefore, the use of existing P-type semiconductor elements for cooling or heating devices is still not satisfactory.
发明内容 Summary of the invention
本发明的目的是： 提供一种工作时两端温差较大、 工作效率较高、 能耗 较低的用于制冷或制热器件的 P型半导体元件制作方法， 以克服现有技术 的不足。 SUMMARY OF THE INVENTION The object of the present invention is to provide a method for fabricating a P-type semiconductor device for a cooling or heating device which has a large temperature difference at both ends during operation, a high working efficiency, and a low energy consumption, thereby overcoming the deficiencies of the prior art.
本发明是这样实现的： 本发明的一种用于制冷或制热器件的 P型半导 体元件制作方法是， 该 P型半导体元件由碲、 铋、 锑材料制成， 先将碲、 铋、 锑材料粉碎并磨成 2000目或 2000目以上， 然后将各材料按重量份计 的配比进行配料得混合料，其配比为：碲 50〜60份、铋 15〜20份、锑 25〜 30份； 将混合料混合均匀后放入用于熔炼的玻璃管中， 并将玻璃管带料一 起烘干后进行拉脖和抽真空处理， 然后将装有混合料的玻璃管放入摇摆炉 中进行真空摇摆熔炼， 其熔炼温度控制在 650〜750 °C， 熔炼时间控制在 15〜25分钟， 然后将玻璃管从摇摆炉取出并在室温下自然冷却； 将自然冷
却后的玻璃管带料垂直放入拉晶炉中进行拉晶处理，拉晶温度为 600〜750 °C， 按每小时 2〜3厘米的速度进行拉晶， 拉晶时间控制在 16〜20小时， 待拉晶完成后即可制得 P型半导体晶棒，将制得的 P型半导体晶棒经切片、 切割制粒后即可制作得到 P型半导体元件。 The present invention is achieved as follows: A method for fabricating a P-type semiconductor device for a cooling or heating device according to the present invention is that the P-type semiconductor device is made of a ruthenium, osmium, and iridium material, and first, 碲, 铋, 锑The material is pulverized and ground to 2000 mesh or more, and then the materials are compounded according to the proportion by weight, and the ratio is: 碲50~60 parts, 铋15~20 parts, 锑25~ 30 The mixture is uniformly mixed, placed in a glass tube for smelting, and the glass tube is dried together, then pulled and vacuumed, and then the glass tube containing the mixture is placed in a swinging furnace. Vacuum swing melting, the melting temperature is controlled at 650~750 °C, the melting time is controlled at 15~25 minutes, then the glass tube is taken out from the swinging furnace and naturally cooled at room temperature; However, the glass tube material is placed vertically in a crystal pulling furnace for crystal pulling treatment. The pulling temperature is 600~750 °C, and the crystal pulling is performed at a speed of 2 to 3 cm per hour. The pulling time is controlled at 16~20. After the completion of the crystal pulling, the P-type semiconductor ingot can be obtained, and the obtained P-type semiconductor ingot can be sliced, cut and granulated to obtain a P-type semiconductor element.
上述各材料按重量份计的较佳配比为： 碲 52〜58份、 铋 16〜19份、 锑 26〜28份。 The preferred ratio of each of the above materials in parts by weight is: 碲 52 to 58 parts, 铋 16 to 19 parts, 锑 26 to 28 parts.
上述各材料按重量份计的最佳配比为： 碲 55份、 铋 17.2份、 锑 27.8 份。 The optimum ratio of each of the above materials in parts by weight is: 碲 55 parts, 铋 17.2 parts, 锑 27.8 parts.
在上述混合料中还加有作为调质用的四碘化碲材料， 四碘化碲的加入 量为混合料总重量的 0. 009〜0. 1倍。 009〜0. 1倍。 The total weight of the mixture is 0. 009~0. 1 times.
上述制得的 P型半导体晶棒为一头直径大、 另一头直径小的圆锥体形 晶棒， 将该圆锥体形的 P型半导体晶棒进行切片得厚度相同的晶片， 晶片 的小直径端为头端、大直径端为尾端，在每片晶片的尾端面上作色标记号； 然后通过数控切粒的方法对每片晶片的圆锥面进行切割制粒， 将每片晶片 都切割制粒成相同的多边形柱体形状， 该多边形柱体形状的 P型半导体， 即为专用于半导体制冷或制热器件的 P型半导体元件。 The P-type semiconductor ingot obtained above is a cone-shaped ingot having a large diameter and a small diameter at the other end, and the cone-shaped P-type semiconductor ingot is sliced to obtain a wafer having the same thickness, and the small diameter end of the wafer is the head end. The large diameter end is the tail end, and the color mark number is marked on the tail end surface of each wafer; then the conical surface of each wafer is cut and granulated by the numerical control dicing method, and each wafer is cut and granulated into the same The polygonal cylinder shape, the polygonal cylinder-shaped P-type semiconductor, is a P-type semiconductor element dedicated to semiconductor refrigeration or heating devices.
上述的多边形柱体为四边形柱体、 正方形柱体、 正六边形柱体、 正八 边形柱体、 正十边形柱体或正十二边形柱体。 The above polygonal cylinder is a quadrangular cylinder, a square cylinder, a regular hexagon cylinder, a regular octagonal cylinder, a regular decagon cylinder or a regular dodecagonal cylinder.
上述用于熔炼的玻璃管的长度为 85〜100厘米。 The above glass tube for smelting has a length of 85 to 100 cm.
由于采用了上述技术方案， 本发明针对制冷或制热器件使用时的特 点， 通过采用特殊的配方及制作工艺来制作专门用于制冷或制热器件的 P 型半导体元件， 与现有技术相比， 本发明的这种 P型半导体元件在工作时 两端的温差较大， 经测试本发明的 P型半导体元件在工作时其冷端与热端 的温差达 73〜78度左右， 所以本发明具有工作效率高、 能耗较低的优点； 此外， 由于本发明的 P型半导体元件能够非常容易地辨别出尾端与头端， 因此在安装使用时， 能够将本发明的 P型半导体元件按照头与尾的有序排 列顺序进行安装连接，从而避免了现有技术中在将 P型半导体元件连接时， 因无法区分头端与尾端， 而造成的头尾相互混乱连接的现象。 采用本发明 的 P型半导体元件在制作制冷或制热器件时， 能够方便地进行头端与尾端
的有序连接， 从而有效地发挥了所有半导体元件的工作效率， 并有效地提 高了整个器件的制冷或制热效果。 具体实施方式 Since the above technical solution is adopted, the present invention is directed to a P-type semiconductor component dedicated to a cooling or heating device by using a special formulation and a manufacturing process for the characteristics of the cooling or heating device, compared with the prior art. The P-type semiconductor device of the present invention has a large temperature difference at both ends during operation, and the P-type semiconductor device of the present invention has a temperature difference of about 73 to 78 degrees at the cold end and the hot end during operation, so the present invention has a work. The advantages of high efficiency and low power consumption; in addition, since the P-type semiconductor element of the present invention can distinguish the tail end and the head end very easily, the P-type semiconductor element of the present invention can be in accordance with the head and when mounted and used. The tails are arranged in an orderly arrangement, thereby avoiding the phenomenon in which the head and the tail are confused with each other when the P-type semiconductor elements are connected in the prior art because the head end and the tail end cannot be distinguished. The P-type semiconductor device of the present invention can conveniently perform the head end and the tail end when manufacturing a cooling or heating device The orderly connection effectively exerts the working efficiency of all semiconductor components and effectively improves the cooling or heating effect of the entire device. detailed description
下面结合实施例对本发明作进一歩的详细说。 The present invention will be further described in detail below with reference to the embodiments.
本发明的实施例： 本发明的一种用于制冷或制热器件的 P型半导体元件 制作方法为， 该 P型半导体元件由碲、 铋、 锑材料制成， 先将碲、 铋、 锑 材料粉碎并磨成 2000目或 2000目以上， 然后将各材料按重量份计的配比 进行配料得混合料， 其配比为： 碲 50〜60份、 铋 15〜20份、 锑 25〜30 份； 将混合料混合均匀后放入用于熔炼的玻璃管中 （为了便于切割晶棒， 用于熔炼的玻璃管的长度可控制在 85〜100厘米的范围内） ， 将玻璃管带 料一起烘干后，按传统的拉脖和抽真空方法进行拉脖和抽真空处理， 然后 将装有混合料的玻璃管放入摇摆炉中进行真空摇摆熔炼， 其熔炼温度控制 在 650〜750 °C， 熔炼时间控制在 15〜25分钟， 然后将玻璃管从摇摆炉取 出并在室温下自然冷却； 将自然冷却后的玻璃管带料垂直放入拉晶炉中进 行拉晶处理， 拉晶温度为 600〜750 °C， 按每小时 2〜3厘米的速度进行拉 晶， 拉晶时间控制在 16〜20小时， 待拉晶完成后即可制得 P型半导体晶 棒， 将制得的 P型半导体晶棒经切片、 切割制粒后即可制作得到 P型半导 体元件。 Embodiments of the present invention: A method for fabricating a P-type semiconductor device for a cooling or heating device according to the present invention is: the P-type semiconductor device is made of a ruthenium, osmium, and iridium material, and the ruthenium, osmium, and iridium materials are first used. After pulverizing and grinding into 2000 mesh or more, and then mixing the materials according to the proportion by weight, the ratio is: 碲50~60 parts, 铋15~20 parts, 锑25~30 parts Mix the mixture evenly and put it into the glass tube for smelting (in order to facilitate the cutting of the ingot, the length of the glass tube used for melting can be controlled within the range of 85~100 cm), and the glass tube strip is baked together. After drying, the neck is pulled and evacuated according to the traditional pulling neck and vacuuming method, and then the glass tube containing the mixture is placed in a rocking furnace for vacuum swing melting, and the melting temperature is controlled at 650 to 750 °C. The smelting time is controlled for 15~25 minutes, then the glass tube is taken out from the swinging furnace and naturally cooled at room temperature; the naturally cooled glass tube strip is vertically placed in a crystal pulling furnace for crystal pulling treatment, and the pulling temperature is 6 00~750 °C, pulling at a speed of 2~3 cm per hour, the pulling time is controlled at 16~20 hours, and the P-type semiconductor ingot can be obtained after the completion of the crystal pulling, and the obtained P-type After the semiconductor ingot is sliced, cut and granulated, a P-type semiconductor element can be produced.
上述各材料按重量份计的较佳配比为： 碲 52〜58份、 铋 16〜19份、 锑 26〜28份。 The preferred ratio of each of the above materials in parts by weight is: 碲 52 to 58 parts, 铋 16 to 19 parts, 锑 26 to 28 parts.
上述各材料按重量份计的最佳配比为： 碲 55份、 铋 17.2份、 锑 27.8 份。 The optimum ratio of each of the above materials in parts by weight is: 碲 55 parts, 铋 17.2 parts, 锑 27.8 parts.
为了满足使用时对半导体电阻的使用要求， 可在混合料中加入作为调 质用的四碘化碲材料， 该四碘化碲的加入量可根据使用的需要控制在混合 料总重量的 0. 009〜0. 1倍范围内。 In order to meet the requirements for the use of the semiconductor resistor in use, a tetraiodide material for quenching and tempering may be added to the mixture, and the amount of the cerium tetraiodide may be controlled to 0% of the total weight of the mixture according to the needs of use. 009~0. 1 times the range.
制作时， 将 P型半导体晶棒制作为一头直径大、 另一头直径小的圆锥 体形晶棒 （其小直径端的直径大小可根据使用的需要进行确定， 通常情况 下小直径端的直径应不小于 10毫米， 其锥度可控制在 2〜5度之间） ， 然
后将该圆锥体形的 P型半导体晶棒采用传统的切片工具进行切片得厚度相 同的晶片， 其晶片的小直径端为头端、 大直径端为尾端， 采用导电材料制 作的颜色 （如采用铜、 铝或银等材料制作成颜色材料） 在每片晶片的尾端 面上作色标记号； 然后通过传统的数控切粒的方法对每片晶片的圆锥面进 行切割制粒， 将每片晶片都切割制粒成相同的多边形柱体形状， 该多边形 柱体形状的 P型半导体， 即为专用于半导体制冷或制热器件的 P型半导体 元件。 In the production, the P-type semiconductor ingot is made into a cone-shaped ingot with a large diameter and a small diameter at the other end (the diameter of the small-diameter end can be determined according to the needs of use, and the diameter of the small-diameter end is usually not less than 10 Millimeter, its taper can be controlled between 2 and 5 degrees), of course Then, the cone-shaped P-type semiconductor ingot is sliced into a wafer of the same thickness by a conventional slicing tool, and the small diameter end of the wafer is a head end, and the large diameter end is a tail end, and a color made of a conductive material is used (if A material such as copper, aluminum or silver is made into a color material. The color mark number is printed on the tail end surface of each wafer; then the conical surface of each wafer is cut and granulated by a conventional numerical control dicing method, and each wafer is processed. Both are cut and granulated into the same polygonal cylinder shape, and the polygonal pillar-shaped P-type semiconductor is a P-type semiconductor element dedicated to semiconductor refrigeration or heating devices.
上述的多边形柱体可根据使用的需要， 制作成四边形柱体、 正方形柱 体、正六边形柱体、正八边形柱体、正十边形柱体或正十二边形柱体即成。
The above-mentioned polygonal cylinder can be made into a quadrangular cylinder, a square cylinder, a regular hexagonal cylinder, a regular octagonal cylinder, a regular decagon cylinder or a regular dodecagonal cylinder according to the needs of use.
Claims
1、 一种用于制冷或制热器件的 P型半导体元件制作方法， 其特征在于: 该 P型半导体元件由碲、 铋、 锑材料制成， 先将碲、 铋、 锑材料粉碎并磨 成 2000目或 2000目以上， 然后将各材料按重量份计的配比进行配料得混 合料， 其配比为： 碲 50〜60份、 铋 15〜20份、 锑 25〜30份； 将混合料 混合均匀后放入用于熔炼的玻璃管中， 并将玻璃管带料一起烘干后进行拉 脖和抽真空处理， 然后将装有混合料的玻璃管放入摇摆炉中进行真空摇摆 熔炼， 其熔炼温度控制在 650〜750 °C， 熔炼时间控制在 15〜25分钟， 然 后将玻璃管从摇摆炉取出并在室温下自然冷却； 将自然冷却后的玻璃管带 料垂直放入拉晶炉中进行拉晶处理，拉晶温度为 600〜750 °C，按每小时 2〜 3厘米的速度进行拉晶， 拉晶时间控制在 16〜20小时， 待拉晶完成后即可 制得 P型半导体晶棒， 将制得的 P型半导体晶棒经切片、 切割制粒后即可 制作得到 P型半导体元件。 1. A method of manufacturing a P-type semiconductor element for refrigeration or heating devices, characterized in that: the P-type semiconductor element is made of tellurium, bismuth, and antimony materials. The tellurium, bismuth, and antimony materials are first crushed and ground into 2000 mesh or above, and then mix the materials in proportions by weight to obtain a mixture. The proportions are: 50 to 60 parts of tellurium, 15 to 20 parts of bismuth, and 25 to 30 parts of antimony; After mixing evenly, put it into a glass tube for smelting, dry the glass tube together with the materials, then perform neck pulling and vacuuming, and then put the glass tube containing the mixture into a swing furnace for vacuum swing smelting. The melting temperature is controlled at 650~750°C, and the melting time is controlled at 15~25 minutes. Then the glass tube is taken out from the swing furnace and naturally cooled at room temperature; the naturally cooled glass tube strip is placed vertically into the crystal pulling furnace. The crystal pulling process is carried out in the process, the crystal pulling temperature is 600~750°C, the crystal pulling is carried out at a speed of 2~3 cm per hour, the crystal pulling time is controlled at 16~20 hours, and the P type can be obtained after the crystal pulling is completed. Semiconductor crystal rod, the P-type semiconductor element can be produced by slicing, cutting and granulating the prepared P-type semiconductor crystal rod.
2、 根据权利要求 1所述用于制冷或制热器件的 P型半导体元件制作 方法， 其特征在于： 各材料按重量份计的配比为： 碲 52〜58份、 铋 16〜 2. The manufacturing method of P-type semiconductor elements for refrigeration or heating devices according to claim 1, characterized in that: the proportion of each material in parts by weight is: tellurium 52~58 parts, bismuth 16~
19份、 梯 26〜28份。 19 copies, ladder 26~28 copies.
3、 根据权利要求 1所述用于制冷或制热器件的 P型半导体元件制作 方法， 其特征在于： 各材料按重量份计的配比为： 碲 55份、 铋 17. 2份、 锑 27. 8份。 3. The manufacturing method of P-type semiconductor elements for refrigeration or heating devices according to claim 1, characterized in that: the proportion of each material in parts by weight is: 55 parts of tellurium, 17.2 parts of bismuth, 27 parts of antimony . 8 servings.
4、 根据权利要求 1所述用于制冷或制热器件的 P型半导体元件制作 方法， 其特征在于： 在混合料中还加有作为调质用的四碘化碲材料， 四碘 化碲的加入量为混合料总重量的 0. 009〜0. 1倍。 4. The manufacturing method of P-type semiconductor elements for refrigeration or heating devices according to claim 1, characterized in that: tellurium tetraiodide as a tempering material is also added to the mixture, and tellurium tetraiodide is added to the mixture. The amount added is 0.009~0.1 times the total weight of the mixture.
5、 根据权利要求 1所述用于制冷或制热器件的 P型半导体元件制作 方法， 其特征在于： 所述制得的 P型半导体晶棒为一头直径大、 另一头直 径小的圆锥体形晶棒， 将该圆锥体形的 P型半导体晶棒进行切片得厚度相 同的晶片， 晶片的小直径端为头端、 大直径端为尾端， 在每片晶片的尾端 面上作色标记号； 然后通过数控切粒的方法对每片晶片的圆锥面进行切割 制粒， 将每片晶片都切割制粒成相同的多边形柱体形状， 该多边形柱体形 状的 P型半导体， 即为专用于半导体制冷或制热器件的 P型半导体元件。
5. The manufacturing method of P-type semiconductor components for refrigeration or heating devices according to claim 1, characterized in that: the prepared P-type semiconductor crystal rod is a cone-shaped crystal with a large diameter at one end and a small diameter at the other end. Rod, slice the cone-shaped P-type semiconductor crystal rod into wafers with the same thickness. The small diameter end of the wafer is the head end and the large diameter end is the tail end. Color mark the tail end surface of each wafer; then The conical surface of each wafer is cut and granulated by the CNC cutting method, and each wafer is cut and granulated into the same polygonal cylinder shape. The polygonal cylinder-shaped P-type semiconductor is specifically used for semiconductor refrigeration. Or P-type semiconductor components of heating devices.
6、 根据权利要求 5所述用于制冷或制热器件的 P型半导体元件制作 方法， 其特征在于： 所述的多边形柱体为四边形柱体、 正方形柱体、 正六 边形柱体、 正八边形柱体、 正十边形柱体或正十二边形柱体。 6. The manufacturing method of P-type semiconductor elements for refrigeration or heating devices according to claim 5, characterized in that: the polygonal cylinder is a quadrilateral cylinder, a square cylinder, a regular hexagonal cylinder, or a regular octagon rectangular cylinder, regular decagonal cylinder or regular dodecagonal cylinder.
7、 根据权利要求 1所述用于制冷或制热器件的 P型半导体元件制作 方法， 其特征在于： 所述用于熔炼的玻璃管的长度为 85〜100厘米。
7. The manufacturing method of P-type semiconductor components for refrigeration or heating devices according to claim 1, characterized in that: the length of the glass tube used for melting is 85~100 cm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310257329.1A CN103456876B (en) | 2013-06-25 | 2013-06-25 | For freezing or heating the P type semiconductor element manufacture method of device |
| CN201310257329.1 | 2013-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2014206163A1 true WO2014206163A1 (en) | 2014-12-31 |
Family
ID=49739036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2014/078440 WO2014206163A1 (en) | 2013-06-25 | 2014-05-26 | Method for manufacturing p-type semiconductor element for refrigeration or heating device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103456876B (en) |
| WO (1) | WO2014206163A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113161470A (en) * | 2021-04-09 | 2021-07-23 | 河南鸿昌电子有限公司 | Material for producing semiconductor refrigeration element, semiconductor crystal grain and refrigeration element |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456876B (en) * | 2013-06-25 | 2016-02-24 | 陈志明 | For freezing or heating the P type semiconductor element manufacture method of device |
| CN105140384A (en) * | 2015-08-07 | 2015-12-09 | 付金国 | Semiconductor refrigerating plate of automobile refrigeration air conditioner and preparation method of semiconductor refrigerating plate |
| CN106449957B (en) * | 2016-11-14 | 2021-12-10 | 苏州科技大学 | Bismuth telluride-based P-type thermoelectric material and preparation method thereof |
| CN108771428A (en) * | 2016-11-17 | 2018-11-09 | 卢定华 | A kind of purified water type cup |
| CN106724550B (en) * | 2016-11-17 | 2019-02-12 | 广西大学 | A kind of Multi-purpose glass |
| CN108713955A (en) * | 2016-11-17 | 2018-10-30 | 李学忠 | A kind of multifunction cup |
| CN108420271A (en) * | 2016-11-17 | 2018-08-21 | 张莉 | Water glass |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1488572A (en) * | 2003-08-20 | 2004-04-14 | 中国科学院上海硅酸盐研究所 | Method for preparing bismuth telluride base thermoelectric material |
| CN1750287A (en) * | 2004-09-14 | 2006-03-22 | 杜效中 | Method and device for producing thermoelectric semiconductor device and its products obtained thereof |
| CN2777761Y (en) * | 2005-02-19 | 2006-05-03 | 杜效中 | Thermoelectric semiconductor device |
| CN102108554A (en) * | 2010-11-30 | 2011-06-29 | 江西纳米克热电电子股份有限公司 | Method for preparing high-performance p-type bismuth telluride-based thermoelectric materials |
| CN103456876A (en) * | 2013-06-25 | 2013-12-18 | 陈志明 | Manufacturing method of P type semiconductor element for refrigeration or heating device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101736974B1 (en) * | 2010-04-08 | 2017-05-17 | 삼성전자주식회사 | Thermoelectric materials and method for manufacturing the same |
-
2013
- 2013-06-25 CN CN201310257329.1A patent/CN103456876B/en active Active
-
2014
- 2014-05-26 WO PCT/CN2014/078440 patent/WO2014206163A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1488572A (en) * | 2003-08-20 | 2004-04-14 | 中国科学院上海硅酸盐研究所 | Method for preparing bismuth telluride base thermoelectric material |
| CN1750287A (en) * | 2004-09-14 | 2006-03-22 | 杜效中 | Method and device for producing thermoelectric semiconductor device and its products obtained thereof |
| CN2777761Y (en) * | 2005-02-19 | 2006-05-03 | 杜效中 | Thermoelectric semiconductor device |
| CN102108554A (en) * | 2010-11-30 | 2011-06-29 | 江西纳米克热电电子股份有限公司 | Method for preparing high-performance p-type bismuth telluride-based thermoelectric materials |
| CN103456876A (en) * | 2013-06-25 | 2013-12-18 | 陈志明 | Manufacturing method of P type semiconductor element for refrigeration or heating device |
Non-Patent Citations (2)
| Title |
|---|
| JIANG, JUN;: "Study on the Preparation and Properties of Bismuth Telluride Based Thermoelectric Materials", DOCTORAL DISSERTATION OF SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES, MAJOR: MATERIALS SCIENCE, 31 December 2005 (2005-12-31), pages 11 - 12 AND 46-50 * |
| XU, ZHIJUN: "Study on the Preparation and Properties of Bi2Te3 Based Thermoelectric Materials with a Smelting Method", MASTER'S DISSERTATION OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, MAJOR: MATERIALS SCIENCE, 25 December 2012 (2012-12-25), pages 18 - 22 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113161470A (en) * | 2021-04-09 | 2021-07-23 | 河南鸿昌电子有限公司 | Material for producing semiconductor refrigeration element, semiconductor crystal grain and refrigeration element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103456876A (en) | 2013-12-18 |
| CN103456876B (en) | 2016-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2014206163A1 (en) | Method for manufacturing p-type semiconductor element for refrigeration or heating device | |
| CN107473731B (en) | High-energy piezoresistor and manufacturing method thereof | |
| US10100437B2 (en) | Method for manufacturing N-type semiconductor element for cooling or heating device | |
| CN104555950A (en) | Bismuth telluride material with excellent thermoelectric properties at medium temperature zone and method for preparing bismuth telluride material with excellent thermoelectric properties at medium temperature zone | |
| CN105272169A (en) | Ce doped CaMnO3 thermoelectric material and preparation method thereof | |
| CN107117959A (en) | A kind of high-curie temperature PTC thermal sensitive ceramic materials and preparation method thereof | |
| CN202595343U (en) | Sapphire substrate annealing furnace | |
| CN104894647B (en) | A kind of lower thermal conductivity bismuth-sulfide polycrystalline thermoelectric material and preparation method thereof | |
| CN106495490B (en) | One kind containing SiO2LED low temperature sealing glass | |
| CN103290249A (en) | Method and apparatus for producing thermoelectric conversion material, and sputtering target production method | |
| CN104103750B (en) | Preparation method of magnesium-silicon based silicon nanowire composite thermoelectric material | |
| TWI541189B (en) | Thermoelectric composite material and fabrication method thereof | |
| CN102617134A (en) | Thermal sensitive ceramic material, thermal resistor made of thermal sensitive ceramic material and used for heating, and manufacture method for thermal resistor | |
| TW201523939A (en) | Thermoelectric materials | |
| CN102745987A (en) | High-curie-point lead-free PTC (Positive Temperature Coefficient) thermal sensitive ceramic material and preparation method thereof | |
| CN106430979B (en) | A kind of low temperature sealing glass and its preparation and application containing Mn | |
| CN105140384A (en) | Semiconductor refrigerating plate of automobile refrigeration air conditioner and preparation method of semiconductor refrigerating plate | |
| CN103130494B (en) | PbxPdO2 block material with room-temperature ferromagnetism, and preparation method thereof | |
| CN112086552B (en) | Composite CoSb3 skutterudite-based thermoelectric material and preparation method thereof | |
| CN103360054A (en) | Thermal sensitive ceramic material, PTC (positive temperature coefficient) thermistor made from thermal sensitive ceramic material for demagnetizing colour TV and manufacturing method of PTC thermistor | |
| Xu et al. | Preparation of low voltage ZnO Varistor using point seed | |
| US10707397B2 (en) | Systems, methods, and materials for cryogenic thermoelectric cooling | |
| CN108048910A (en) | Calcium cobalt base oxide material C a3CoTiO6Monocrystalline and preparation method thereof | |
| CN102617132A (en) | Thermal sensitive ceramic material, thermistor made of thermal sensitive ceramic material and used for yarn heating, and thermistor production method | |
| CN109728156A (en) | A kind of Ag of Ag auto-dope2The preparation method of Te thermoelectric material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14818324 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 14818324 Country of ref document: EP Kind code of ref document: A1 |