WO2014203967A1 - Antenna device and wireless device provided therewith - Google Patents

Antenna device and wireless device provided therewith Download PDF

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Publication number
WO2014203967A1
WO2014203967A1 PCT/JP2014/066290 JP2014066290W WO2014203967A1 WO 2014203967 A1 WO2014203967 A1 WO 2014203967A1 JP 2014066290 W JP2014066290 W JP 2014066290W WO 2014203967 A1 WO2014203967 A1 WO 2014203967A1
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Prior art keywords
radiating element
antenna device
feeding
substrate
medium
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PCT/JP2014/066290
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French (fr)
Japanese (ja)
Inventor
龍太 園田
稔貴 佐山
井川　耕司
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旭硝子株式会社
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Priority to JP2015522977A priority Critical patent/JPWO2014203967A1/en
Publication of WO2014203967A1 publication Critical patent/WO2014203967A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/342—Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes
    • H01Q5/357—Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes using a single feed point
    • H01Q5/364—Creating multiple current paths
    • H01Q5/371—Branching current paths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/30—Resonant antennas with feed to end of elongated active element, e.g. unipole
    • H01Q9/42—Resonant antennas with feed to end of elongated active element, e.g. unipole with folded element, the folded parts being spaced apart a small fraction of the operating wavelength

Definitions

  • the present invention relates to an antenna device and a wireless device including the antenna device (for example, a portable wireless device such as a mobile phone).
  • a wireless device including the antenna device (for example, a portable wireless device such as a mobile phone).
  • the antenna conductor (radiation conductor) disclosed in Patent Document 1 is formed on the exterior surface of the housing and is in physical contact with a power supply pin provided on the substrate (see FIG. 2 of Patent Document 1). ).
  • a power supply pin When such a power supply pin is used, a special connection terminal having a mechanism for mitigating the impact, such as a spring pin connector, is used in order to improve reliability when an external impact is applied.
  • a special connection terminal having a mechanism for mitigating the impact, such as a spring pin connector, is used in order to improve reliability when an external impact is applied.
  • the non-contact power feeding method can be said to be a structure resistant to impact.
  • a brittle material such as glass or ceramics
  • an antenna is formed on the housing, if power is supplied with a power supply pin or the like, it will become a point on the housing when a strong impact is applied from the outside. When the stress is concentrated, the housing may be damaged and the antenna may not operate.
  • non-contact power feeding can be said to be very effective.
  • an object of the present invention is to provide an antenna device and a wireless device including the antenna device that can realize non-contact power feeding having high position robustness with respect to the positional relationship with the radiation conductor.
  • FIG. 4 Plan view showing an example of an analysis model of an antenna device
  • a perspective view showing an example of an analysis model of an antenna device A perspective view showing an example of an analysis model of an antenna device
  • FIG. 4 is a plan view of an analysis model of the antenna device of FIG. Partial enlarged view of FIG.
  • the feeding point 38 is a feeding part connected to a predetermined transmission line or feeding line using the ground plane 70.
  • the predetermined transmission line include a microstrip line, a strip line, and a coplanar waveguide with a ground plane (a coplanar waveguide having a ground plane disposed on the surface opposite to the conductor surface).
  • the feeder line include a feeder line and a coaxial cable.
  • the power feeding element 37 is connected to, for example, a power feeding circuit (for example, an integrated circuit such as an IC chip (not shown)) mounted on the substrate 80 via a power feeding point 38.
  • the feed element 37 and the feed circuit may be connected via a plurality of different types of transmission lines and feed lines.
  • the substrate 80 is a substrate whose base material is a dielectric, a magnetic material, or a mixture of a dielectric and a magnetic material.
  • the dielectric include resin, glass, glass ceramics, LTCC (Low Temperature Co-Fired Ceramics), and alumina.
  • LTCC Low Temperature Co-Fired Ceramics
  • alumina As a specific example of a mixture of a dielectric and a magnetic material, it is sufficient to have either a transition element such as Fe, Ni, or Co, or a metal or oxide containing a rare earth element such as Sm or Nd. Examples thereof include crystal ferrite, spinel ferrite (Mn—Zn ferrite, Ni—Zn ferrite, etc.), garnet ferrite, permalloy, and Sendust (registered trademark).
  • the substrate 80 includes a ground plane 70 and a feeding point 38 with the ground plane 70 as a ground reference.
  • the radiating element 31 is a linear antenna conductor portion arranged along the outer edge portion 71 and extends in the Y-axis direction parallel to the outer edge portion 71 with a predetermined shortest distance D1 in the X-axis direction, for example.
  • the conductor portion 32 is provided.
  • the linear radiation element 31 is illustrated in FIG. 1, the radiation element 31 may have other shapes such as an L shape and a loop shape.
  • the radiating element 31 has the conductor portion 32 along the outer edge portion 71, for example, the directivity of the antenna device 1 can be easily controlled.
  • the feeding element 37 is an element that is provided in the medium 41 and is connected to a feeding point 38 that is connected to a transmission line such as a microstrip line.
  • the feeding element 37 feeds the radiation element 31 in a non-contact manner via the feeding unit 36.
  • FIG. 1 shows a linear conductor extending in a direction perpendicular to the outer edge portion 71 of the ground plane 70 and parallel to the X axis, and a linear shape extending parallel to the outer edge portion 71 parallel to the Y axis.
  • a power feeding element 37 formed in an L shape by a conductor is illustrated. In the case of FIG. 1, the power feeding element 37 extends in the X-axis direction starting from the power feeding point 38, is then bent in the Y-axis direction, and extends to an end portion 39 extending in the Y-axis direction.
  • the radiating element 31 and the feeding element 37 overlap in a plan view in the Z-axis direction, but if the feeding element 37 is separated from the radiating element 31 by a non-contactable power feeding distance, It does not necessarily have to overlap in plan view in the Z-axis direction. For example, you may overlap in planar view in arbitrary directions, such as an X-axis or a Y-axis direction.
  • Electromagnetic coupling is coupling utilizing the resonance phenomenon of electromagnetic fields.
  • non-patent literature A. Kurs, et al, “Wireless Power Transfer via Strongly Coupled Magnetic Resonances,” Science Express3. 5834, pp. 83-86, Jul. 2007.
  • Electromagnetic coupling is also referred to as electromagnetic resonance coupling or electromagnetic resonance coupling.
  • electromagnetic resonance coupling When two resonators that resonate at the same frequency are brought close to each other and one of the resonators resonates, a near field (non-radiation) is created between the resonators. This is a technique for transmitting energy to the other resonator via coupling in the field region.
  • a structure strong against impact can be obtained by electromagnetically coupling the feeding element 37 and the radiating element 31. That is, by using electromagnetic field coupling, power can be supplied to the radiating element 31 using the power feeding element 37 without physically contacting the power feeding element 37 and the radiating element 31, so that a contact power feeding method that requires physical contact is adopted. In comparison, a structure strong against impact can be obtained.
  • the radiating element at the operating frequency is changed with respect to the change in the separation distance (coupling distance) between the feeding element 37 and the radiating element 31 as compared with the case of feeding by capacitive coupling.
  • the operation gain (antenna gain) 31 is unlikely to decrease.
  • the operating gain is an amount calculated by the product of the radiation efficiency of the antenna and the return loss, and is an amount defined as the efficiency of the antenna with respect to input power. Accordingly, by electromagnetically coupling the feeding element 37 and the radiating element 31, it is possible to increase the degree of freedom in determining the arrangement positions of the feeding element 37 and the radiating element 31, and to improve the position robustness.
  • the power feeding unit 36 is configured to have the entire length of the radiating element 31 from a portion (in this case, the central portion 90) having the lowest impedance at the resonance frequency of the fundamental mode of the radiating element 31. It is good to be located in the site
  • the total length of the radiating element 31 corresponds to L ⁇ b> 32, and the power feeding portion 36 is located on the end portion 34 side with respect to the central portion 90.
  • the electrical length giving the fundamental mode of resonance of the feeding element 37 is Le37
  • the electrical length giving the fundamental mode of resonance of the radiating element 31 is Le31
  • the feeding element 37 or the radiating element at the resonance frequency f 1 of the fundamental mode of the radiating element 31 When the wavelength on 31 is ⁇ , Le37 is (3/8) ⁇ ⁇ or less, and Le31 is (3/8) ⁇ ⁇ when the fundamental mode of resonance of the radiating element 31 is a dipole mode.
  • the resonance mode of the radiating element 31 is the loop mode
  • the ratio is preferably (7/8) ⁇ ⁇ or more and (9/8) ⁇ ⁇ or less.
  • the physical length L37 of the power feeding element 37 is a physical length that gives Le37, and is equal to Le37 in an ideal case that does not include other elements.
  • L37 is preferably greater than zero and less than or equal to Le37.
  • L37 can be shortened (size reduced) by using a matching circuit such as an inductor.
  • the Le31 is (3/8) ⁇ ⁇ or more (5/8) ⁇ or less is preferred, (7/16) ⁇ ⁇ or more (9/16) ⁇ ⁇ or less is more preferred, and (15/32) ⁇ ⁇ or more (17/32) ⁇ ⁇ or less is particularly preferred.
  • the Le31 is preferably (3/8) ⁇ ⁇ ⁇ m or more and (5/8) ⁇ ⁇ ⁇ m or less, and (7/16) ⁇ ⁇ ⁇ m or more (9/16).
  • L31 is (3/8) ⁇ ⁇ g2 or more and (5/8) ⁇ ⁇ g2 or less, and the fundamental mode of resonance of the radiating element is a loop mode. In this case, it is (7/8) ⁇ ⁇ g2 or more and (9/8) ⁇ ⁇ g2 or less.
  • the physical length L31 of the radiating element 31 is the physical length that gives Le31, and is equal to Le31 in an ideal case that does not include other elements. Even if L31 is shortened by using a matching circuit such as an inductor, it exceeds zero, preferably Le31 or less, and particularly preferably 0.4 times or more and 1 time or less of Le31.
  • the length of L37 uses the feed element 37 as a radiation conductor.
  • the design frequency of the power feeding element 37 is 3.5 GHz, it is 20 mm.
  • the length of L31 is the design frequency of the radiating element 31. 34 mm when the frequency is 2.2 GHz.
  • the feeding element 37 may function as a radiating element as described above.
  • the radiating element 31 is a radiating conductor that functions as, for example, a ⁇ / 2 dipole antenna by being fed by the feeding element 37 in a non-contact manner through electromagnetic coupling by the feeding portion 36.
  • the feed element 37 is a linear feed conductor that can feed power to the radiating element 31, and functions as a monopole antenna (for example, a ⁇ / 4 monopole antenna) by being fed at a feed point 38. It is a radiation conductor that can also be used.
  • L37 is (1/8) ⁇ ⁇ g3 or less (3/8) ⁇ ⁇ g3 or less, preferably (3/16) ⁇ ⁇ g3 or more (5/16) ⁇ ⁇ g3 or less.
  • the physical length L37 of the feeding element 37 is a physical length that gives Le37, and is equal to Le37 in an ideal case that does not include other elements.
  • L37 is preferably greater than zero and less than or equal to Le37.
  • L37 can be shortened (size reduced) by using a matching circuit such as an inductor.
  • the shortest distance H4 between the feeding element 37 and the radiating element 31 is 0.2 ⁇ ⁇ 0 or less (more preferably, 0.1 ⁇ ⁇ 0 or less, more preferably 0.05 ⁇ ⁇ 0 or less). Disposing the feeding element 37 and the radiating element 31 by such a shortest distance H4 is advantageous in that the operating gain of the radiating element 31 is improved.
  • the shortest distance H4 is a linear distance between the closest parts in the feeding element 37 and the radiating element 31. Further, as long as the feeding element 37 and the radiating element 31 are electromagnetically coupled to each other, the feeding element 37 and the radiating element 31 may or may not intersect when viewed from an arbitrary direction, and the intersection angle may be an arbitrary angle. Good.
  • the distance that the feeding element 37 and the radiating element 31 run in parallel at the shortest distance H4 is preferably 3/8 or less of the physical length of the radiating element 31. More preferably, it is 1/4 or less, and more preferably 1/8 or less.
  • the position where the shortest distance H4 is located is a portion where the coupling between the feeding element 37 and the radiating element 31 is strong, and if the parallel distance at the shortest distance H4 is long, the radiating element 31 has a strong and low impedance portion. Since they are coupled, impedance matching may not be achieved. Therefore, in order to strongly couple only with a portion where the change in impedance of the radiating element 31 is small, it is advantageous in terms of impedance matching that the distance of parallel running at the shortest distance H4 is short.
  • a transition element such as Fe, Ni, or Co
  • a metal or oxide containing a rare earth element such as Sm or Nd.
  • examples thereof include crystal ferrite, spinel ferrite (Mn—Zn ferrite, Ni—Zn ferrite, etc.), garnet ferrite, permalloy, and Sendust (registered trademark).
  • the product P2 of the relative permittivity ⁇ r of the substrate 80 and the relative permeability ⁇ r of the substrate 80 is, for example, 2 or more and 5 or less.
  • the product P1 of the relative permittivity ⁇ r1 of the medium 41 and the relative permeability ⁇ r1 of the medium 41 is preferably 6 or more, and more preferably 10 or more.
  • the product P1 is preferably 1000 or less, more preferably 400 or less in terms of manufacturing or functioning as an antenna.
  • a chip component 40 including a power feeding element 37 and a medium 41 is mounted on a substrate 80.
  • the power feeding element 37 in contact with the medium 41 can be easily mounted on the substrate 80.
  • the substrate 80 has a transmission line provided with a strip conductor 82 connected to the feeding point 38.
  • the strip conductor 82 is a signal line formed on the surface of the substrate 80 so that the substrate 80 is sandwiched between the strip conductor 82 and the ground plane 70, for example.
  • the positions of the feeding element 37, the radiating element 31, and the ground plane 70 in the height direction parallel to the Z-axis may be different from each other, or all or only a part thereof may be the same.
  • FIG. 4 is a perspective view partially showing an example of the antenna device 3 including the chip component 47 provided with one feeding element 37 and one radiating element 31C. Both the feeding element 37 and the radiating element 31 ⁇ / b> C are in contact with the medium 41.
  • the antenna device 3 includes a substrate 80, a chip component 47, and a radiating element 31D arranged away from the radiating element 31C.
  • the radiating element 31 ⁇ / b> D arranged away from the chip component 47 is a linear conductor that is not in contact with the medium 41.
  • the power feeding element 37 is connected to the power feeding point 38 via the electrode 44 and the wiring 43 of the chip component 47.
  • the thickness (height) in the Z-axis direction was set to 0.018 mm.
  • the shape of the ground plane 70 was a rectangle with an X-axis direction of 30 mm and a Y-axis direction of 50 mm, and the substrate 80 was a rectangle with an X-axis direction of 30 mm and a Y-axis direction of 60 mm. In FIG.
  • H1 is set to 0.8 mm
  • H2 is set to 1.5 mm
  • H3 is set to 1 mm.
  • the shortest distance H4 between the feeding element 37 and the radiating element 31 was set to 0.5 mm, and the feeding element 37 and the radiating element 31 were electromagnetically coupled.
  • FIG. 5 is an enlarged perspective view of a part of the analysis model when the antenna device 1 having the configuration shown in FIGS. L41, L42, and L43 are assumed to be horizontally long, vertically long, and high, respectively, in the medium 41 of the chip component 40, and run in parallel to a part of the conductor portion of the feed element 37 (the conductor portion 32 of the radiating element 31).
  • the length L34 (see FIG. 1) of the portion) was set to the same length as the horizontal length L41.
  • FIG. 7 The S11 characteristic and the correlation coefficient characteristic when the antenna apparatus 2 having the form shown in FIG. 7 is a plan view of an analysis model of the antenna device 2 formed symmetrically, FIG. 8 is a partially enlarged view of FIG. 7, and FIG. 9 shows the positional relationship of each component of the antenna device 3. It is a figure which shows an example typically.
  • FIG. 10 shows the S11 and S21 characteristics of the antenna device 2.
  • FIG. 11 is a characteristic diagram of the correlation coefficient of the antenna device 2. As shown in FIGS. 10 and 11, the correlation coefficient decreases to near zero near the resonance frequency of 2.5 GHz. Therefore, the antenna device 2 functions as a MIMO antenna even if a plurality of feeding elements are in the chip part.
  • FIG. 15 shows the S11 characteristic of the antenna device 2 when there is no radiating element 31C, and shows a case where the feeding element 37 feeds only the radiating element 31D.
  • the antenna device 3 is excited at the resonance frequency of the fundamental mode and the resonance frequency of the secondary mode of the radiating element 31D, and functions as a multiband antenna. In this way, the power feeding element 37 in the chip component can feed power to the radiating element 31D that is separated from the chip component.
  • FIG. 16 shows the S11 characteristic of the antenna device 2 when the radiating element 31C is present, and shows a case where the feeding element 37 feeds both the radiating element 31C and the radiating element 31D.
  • the antenna device 3 excites not only the resonance frequency of the fundamental mode and the resonance frequency of the secondary mode of the radiating element 31D but also the resonance frequency of the fundamental mode of the radiating element 31C.
  • the chip component may include a radiating element as well as a feeding element.
  • First dipole antenna element 20
  • Second dipole antenna elements 31, 31A, 31B, 31C, 31D Radiating element 32
  • Conductor portion 36
  • Feeding portion 37
  • Feeding elements 38, 38A, 38B
  • Feeding point 40
  • Chip component 41
  • Medium 42
  • Surface 43, 43A, 43B Wiring 44, 44A, 44B
  • Electrode 45 Matching circuit 70 Ground plane 71, 72 Outer edge 73 Corner 80, 110 Substrate 81 Land 82 Strip conductor 90
  • Central part 100 Wireless communication apparatus

Abstract

An antenna device provided with the following: a substrate provided with a feed point; a feed element connected to said feed point; a radiating element to which said feed element supplies power in a contactless manner; and a medium in contact with the feed element. The product of the relative permittivity of the medium and the relative magnetic permeability of the medium is greater than the product of the relative permittivity of the substrate and the relative magnetic permeability of the substrate. For example, a chip component containing the aforementioned feed element and the aforementioned medium could be mounted on the aforementioned substrate with the feed element located inside said chip component.

Description

アンテナ装置及びそれを備える無線装置ANTENNA DEVICE AND RADIO DEVICE INCLUDING THE SAME
　本発明は、アンテナ装置及びそれを備える無線装置（例えば、携帯電話などの携帯無線機）に関する。 The present invention relates to an antenna device and a wireless device including the antenna device (for example, a portable wireless device such as a mobile phone).
　携帯無線機等に搭載されるアンテナは、近年、その個数が増加しており、また回路基板の集積密度が高まっているため、筺体表面、あるいは筺体内部など、回路基板から離れた部位に実装されている。 In recent years, the number of antennas mounted on portable wireless devices and the like has increased, and the integration density of circuit boards has increased. Therefore, the antennas are mounted on the surface of the enclosure or inside the enclosure away from the circuit board. ing.
　例えば、特許文献１に開示されたアンテナ導体（放射導体）は、筐体外装面に形成されていて、基板に設けられた給電ピンに物理的に接触している（特許文献１の図２参照）。このような給電ピンを用いる場合には、外部からの衝撃が加わった際の信頼性を向上するために、スプリングピンコネクタなどの衝撃を緩和する機構を有する特殊な接続端子が利用される。また、このような特殊な機構を使用しない例として、特許文献２に開示された給電方式がある。 For example, the antenna conductor (radiation conductor) disclosed in Patent Document 1 is formed on the exterior surface of the housing and is in physical contact with a power supply pin provided on the substrate (see FIG. 2 of Patent Document 1). ). When such a power supply pin is used, a special connection terminal having a mechanism for mitigating the impact, such as a spring pin connector, is used in order to improve reliability when an external impact is applied. In addition, as an example in which such a special mechanism is not used, there is a power feeding method disclosed in Patent Document 2.
　特許文献２のアンテナ装置は、筐体に放射導体が形成され、また、回路基板上に垂直に立てられた給電線の先端に容量板が配置されている（特許文献２の図１参照）。容量板と放射導体が容量結合することにより、非接触で放射導体に給電されるため、非接触給電方式は、衝撃に強い構造といえる。特に、筐体にガラスやセラミックスなどの脆性材料を利用し、筐体にアンテナを形成する場合において、給電ピンなどで給電を行うと、外部から強い衝撃が加わった際に筐体の１点に応力が集中することで、筐体が破損し、アンテナも動作しなくなる可能性がある。このような問題を回避する手段として、非接触給電は非常に有効といえる。 In the antenna device of Patent Document 2, a radiating conductor is formed in a casing, and a capacitor plate is disposed at the tip of a feeder line that stands vertically on a circuit board (see FIG. 1 of Patent Document 2). Since the capacitive plate and the radiation conductor are capacitively coupled, the radiation conductor is fed in a non-contact manner. Therefore, the non-contact power feeding method can be said to be a structure resistant to impact. In particular, when a brittle material such as glass or ceramics is used for the housing, and an antenna is formed on the housing, if power is supplied with a power supply pin or the like, it will become a point on the housing when a strong impact is applied from the outside. When the stress is concentrated, the housing may be damaged and the antenna may not operate. As a means for avoiding such a problem, non-contact power feeding can be said to be very effective.
特開２００９－０６０２６８号公報JP 2009-060268 A 特開２００１－２４４７１５号公報JP 2001-244715 A
　しかしながら、放射導体と容量板とを容量結合させる給電方式では、製造上の誤差などで、放射導体と容量板との相対的な位置関係、特に間隔が設計値からずれることによって容量値が大きく変化する。その結果、インピーダンスマッチングがとれなくなるおそれがある。また、使用による振動などによって放射導体と容量板との相対的な位置関係が変化しても同様のことが発生するおそれがある。 However, in the power feeding method in which the radiation conductor and the capacitive plate are capacitively coupled, the capacitance value greatly changes due to manufacturing errors and the relative positional relationship between the radiation conductor and the capacitive plate, in particular, the gap deviates from the design value. To do. As a result, impedance matching may not be achieved. In addition, the same may occur even if the relative positional relationship between the radiation conductor and the capacitive plate changes due to vibrations caused by use.
　そこで本発明は、放射導体との位置関係について高い位置ロバスト性を有する非接触給電を実現できる、アンテナ装置及びそれを備える無線装置の提供を目的とする。 Therefore, an object of the present invention is to provide an antenna device and a wireless device including the antenna device that can realize non-contact power feeding having high position robustness with respect to the positional relationship with the radiation conductor.
　上記目的を達成するため、
　給電点を備えた基板と、
　前記給電点に接続される給電素子と、
　前記給電素子によって非接触で給電される放射素子と、
　前記給電素子に接する媒質とを備え、
　前記媒質の比誘電率と前記媒質の比透磁率との積は、前記基板の比誘電率と前記基板の比透磁率との積よりも大きい、アンテナ装置及びそれを備える無線装置が提供される。 To achieve the above objective,
A substrate with a feed point;
A feed element connected to the feed point;
A radiating element fed in a non-contact manner by the feeding element;
A medium in contact with the feeding element,
An antenna device and a wireless device including the antenna device are provided in which a product of a relative permittivity of the medium and a relative permeability of the medium is larger than a product of a relative permittivity of the substrate and a relative permeability of the substrate. .
　本発明によれば、放射導体との位置関係について高い位置ロバスト性を有する非接触給電を実現できる。 According to the present invention, it is possible to realize non-contact power feeding having high position robustness with respect to the positional relationship with the radiation conductor.
アンテナ装置の解析モデルの一例を示す平面図Plan view showing an example of an analysis model of an antenna device 図１のアンテナ装置の各構成の位置関係の一例を模式的に示す図The figure which shows typically an example of the positional relationship of each structure of the antenna apparatus of FIG. アンテナ装置の解析モデルの一例を示す斜視図A perspective view showing an example of an analysis model of an antenna device アンテナ装置の解析モデルの一例を示す斜視図A perspective view showing an example of an analysis model of an antenna device 図１のアンテナ装置の解析モデルを示す斜視図The perspective view which shows the analysis model of the antenna apparatus of FIG. 図５のアンテナ装置のＳ１１特性図S11 characteristic diagram of the antenna device of FIG. 図３のアンテナ装置の解析モデルの平面図Plan view of the analysis model of the antenna device of FIG. 図７の一部拡大図Partial enlarged view of FIG. 図３のアンテナ装置の各構成の位置関係の一例を模式的に示す図The figure which shows typically an example of the positional relationship of each structure of the antenna apparatus of FIG. 図３のアンテナ装置のＳ１１、Ｓ２１特性図S11, S21 characteristic diagram of the antenna device of FIG. 図３のアンテナ装置の相関係数の一例を示す図The figure which shows an example of the correlation coefficient of the antenna apparatus of FIG. 図４のアンテナ装置の解析モデルの平面図FIG. 4 is a plan view of an analysis model of the antenna device of FIG. 図１２の一部拡大図Partial enlarged view of FIG. 図４のアンテナ装置の各構成の位置関係の一例を模式的に示す図The figure which shows typically an example of the positional relationship of each structure of the antenna apparatus of FIG. 図４のアンテナ装置（放射素子がチップ部品内に無い場合）のＳ１１特性図S11 characteristic diagram of the antenna device of FIG. 4 (when the radiating element is not in the chip part) 図４のアンテナ装置（放射素子がチップ部品内にある場合）のＳ１１特性図S11 characteristic diagram of the antenna device of FIG. 4 (when the radiating element is in a chip part)
　図１は、本発明の一実施形態であるアンテナ装置１の動作を解析するためのコンピュータ上のシミュレーションモデルを示した平面図である。電磁界シミュレータとして、Ｍｉｃｒｏｗａｖｅ　Ｓｔｕｄｉｏ（登録商標）（ＣＳＴ社）を使用した。 FIG. 1 is a plan view showing a simulation model on a computer for analyzing the operation of the antenna device 1 according to an embodiment of the present invention. As an electromagnetic simulator, Microwave Studio (registered trademark) (CST) was used.
　アンテナ装置１は、給電点３８と、グランドプレーン７０と、放射素子３１と、放射素子３１に給電する給電部３６と、放射素子３１からＺ軸方向に所定距離離れて配置された導体である給電素子３７と、給電素子３７を備えた媒質４１とを備えている。給電部３６は、放射素子３１単体に対する給電部位であり、アンテナ装置１としての給電部位ではない。アンテナ装置１としての給電部位は、給電点３８である。 The antenna device 1 includes a feeding point 38, a ground plane 70, a radiating element 31, a feeding unit 36 that feeds the radiating element 31, and a feeding that is a conductor arranged at a predetermined distance from the radiating element 31 in the Z-axis direction. An element 37 and a medium 41 including a feeding element 37 are provided. The power feeding unit 36 is a power feeding part for the radiating element 31, and is not a power feeding part as the antenna device 1. A feeding part as the antenna device 1 is a feeding point 38.
　給電点３８は、グランドプレーン７０を利用した所定の伝送線路や給電線等に接続される給電部位である。所定の伝送線路の具体例として、マイクロストリップライン、ストリップライン、グランドプレーン付きコプレーナウェーブガイド（導体面とは反対側の表面にグランドプレーンが配置されたコプレーナウェーブガイド）などが挙げられる。給電線としては、フィーダー線や同軸ケーブルが挙げられる。給電素子３７は、給電点３８を介して、例えば、基板８０に実装される給電回路（例えば、不図示のＩＣチップ等の集積回路）に接続される。給電素子３７と給電回路は、上記の異なる複数の種類の伝送線路や給電線を介して接続されてもよい。 The feeding point 38 is a feeding part connected to a predetermined transmission line or feeding line using the ground plane 70. Specific examples of the predetermined transmission line include a microstrip line, a strip line, and a coplanar waveguide with a ground plane (a coplanar waveguide having a ground plane disposed on the surface opposite to the conductor surface). Examples of the feeder line include a feeder line and a coaxial cable. The power feeding element 37 is connected to, for example, a power feeding circuit (for example, an integrated circuit such as an IC chip (not shown)) mounted on the substrate 80 via a power feeding point 38. The feed element 37 and the feed circuit may be connected via a plurality of different types of transmission lines and feed lines.
　基板８０は、誘電体、磁性体、又は誘電体と磁性体との混合物を基材とする基板である。誘電体の具体例として、樹脂、ガラス、ガラスセラミックス、ＬＴＣＣ（Ｌｏｗ　Ｔｅｍｐｅｒａｔｕｒｅ　Ｃｏ－Ｆｉｒｅｄ　Ｃｅｒａｍｉｃｓ）、アルミナなどが挙げられる。誘電体と磁性体との混合物の具体例として、ＦｅやＮｉ、Ｃｏなどの遷移元素、ＳｍやＮｄなどの希土類元素を含む金属あるいは酸化物のいずれかを有していればよく、例えば、六方晶系フェライト、スピネル系フェライト（Ｍｎ－Ｚｎ系フェライト、Ｎｉ－Ｚｎ系フェライトなど）、ガーネット系フェライト、パーマロイ、センダスト（登録商標）などが挙げられる。基板８０は、グランドプレーン７０と、グランドプレーン７０をグランド基準とする給電点３８とを備えている。 The substrate 80 is a substrate whose base material is a dielectric, a magnetic material, or a mixture of a dielectric and a magnetic material. Specific examples of the dielectric include resin, glass, glass ceramics, LTCC (Low Temperature Co-Fired Ceramics), and alumina. As a specific example of a mixture of a dielectric and a magnetic material, it is sufficient to have either a transition element such as Fe, Ni, or Co, or a metal or oxide containing a rare earth element such as Sm or Nd. Examples thereof include crystal ferrite, spinel ferrite (Mn—Zn ferrite, Ni—Zn ferrite, etc.), garnet ferrite, permalloy, and Sendust (registered trademark). The substrate 80 includes a ground plane 70 and a feeding point 38 with the ground plane 70 as a ground reference.
　グランドプレーン７０は、基板８０の表層又は内層に形成された部位である。グランドプレーン７０は、例えば、少なくとも一つの角部７３を有するグランド部位であり、角部７３からＹ軸方向に直線的に延伸する外縁部７１と、角部７３からＸ軸方向に直線的に延伸する外縁部７２とを有している。外縁部７１は外縁部７２の延伸方向に直交するように延伸することが好ましいが、本発明の効果を損なわない範囲で、例えば、互いの延伸方向の交わる角度は、７０°以上１１０°以下であることが好ましく、８０°以上１００°以下であることがより好ましい。給電点３８は、例えば、グランドプレーン７０の角部７３の近傍に配置されている。 The ground plane 70 is a part formed on the surface layer or the inner layer of the substrate 80. The ground plane 70 is, for example, a ground portion having at least one corner 73, an outer edge portion 71 linearly extending from the corner 73 in the Y-axis direction, and linearly extending from the corner 73 in the X-axis direction. And an outer edge portion 72. The outer edge portion 71 is preferably stretched so as to be orthogonal to the stretching direction of the outer edge portion 72, but within the range not impairing the effects of the present invention, for example, the angle at which the stretching directions intersect is 70 ° or more and 110 ° or less. It is preferable that it is 80 ° or more and 100 ° or less. For example, the feeding point 38 is arranged in the vicinity of the corner 73 of the ground plane 70.
　放射素子３１は、外縁部７１に沿うように配置された線状のアンテナ導体部分であり、例えばＸ軸方向に所定の最短距離Ｄ１離れた状態で外縁部７１に平行にＹ軸方向に延在している導体部分３２を有している。図１には、直線状の放射素子３１が例示されているが、放射素子３１は、Ｌ字状やループ状などの他の形状であってよい。放射素子３１が、外縁部７１に沿った導体部分３２を有することによって、例えばアンテナ装置１の指向性を容易に制御することが可能となる。 The radiating element 31 is a linear antenna conductor portion arranged along the outer edge portion 71 and extends in the Y-axis direction parallel to the outer edge portion 71 with a predetermined shortest distance D1 in the X-axis direction, for example. The conductor portion 32 is provided. Although the linear radiation element 31 is illustrated in FIG. 1, the radiation element 31 may have other shapes such as an L shape and a loop shape. When the radiating element 31 has the conductor portion 32 along the outer edge portion 71, for example, the directivity of the antenna device 1 can be easily controlled.
　給電素子３７は、媒質４１に設けられ、マイクロストリップライン等の伝送線路に接続される給電点３８に接続される素子であり、給電部３６を介して、放射素子３１に対して非接触で給電可能な線状導体である。図１には、グランドプレーン７０の外縁部７１に対して直角且つＸ軸に平行な方向に延在する直線状導体と、Ｙ軸に平行な外縁部７１に並走して延在する直線状導体とによって、Ｌ字状に形成された給電素子３７が例示されている。図１の場合、給電素子３７は、給電点３８を起点にＸ軸方向に延伸してからＹ軸方向に折り曲げられ、Ｙ軸方向への延伸の端部３９まで延伸している。 The feeding element 37 is an element that is provided in the medium 41 and is connected to a feeding point 38 that is connected to a transmission line such as a microstrip line. The feeding element 37 feeds the radiation element 31 in a non-contact manner via the feeding unit 36. Possible linear conductor. FIG. 1 shows a linear conductor extending in a direction perpendicular to the outer edge portion 71 of the ground plane 70 and parallel to the X axis, and a linear shape extending parallel to the outer edge portion 71 parallel to the Y axis. A power feeding element 37 formed in an L shape by a conductor is illustrated. In the case of FIG. 1, the power feeding element 37 extends in the X-axis direction starting from the power feeding point 38, is then bent in the Y-axis direction, and extends to an end portion 39 extending in the Y-axis direction.
　なお、図１の場合、放射素子３１と給電素子３７は、Ｚ軸方向での平面視において重複しているが、給電素子３７が放射素子３１に非接触で給電可能な距離離れていれば、必ずしもＺ軸方向での平面視において重複していなくてもよい。例えば、Ｘ軸又はＹ軸方向などの任意の方向での平面視において重複していてもよい。 In the case of FIG. 1, the radiating element 31 and the feeding element 37 overlap in a plan view in the Z-axis direction, but if the feeding element 37 is separated from the radiating element 31 by a non-contactable power feeding distance, It does not necessarily have to overlap in plan view in the Z-axis direction. For example, you may overlap in planar view in arbitrary directions, such as an X-axis or a Y-axis direction.
　図２は、アンテナ装置１の各構成のＺ軸方向の位置関係を模式的に示した図である。給電素子３７は、基板８０の外部に配置された媒質４１に接して設けられている。媒質４１の詳細については後述する。放射素子３１は、給電素子３７から離れて配置され、例えば図２に示されるように、基板８０から距離Ｈ２離れて基板８０に対向する基板１１０に設けられている。基板１１０は、誘電体、磁性体、又は誘電体と磁性体との混合物を基材とする基板である。基板１１０の基材の具体例は、上述の基板８０の場合と同様である。放射素子３１は、図２では基板１１０の給電素子３７に対向する側の表面に配置されているが、基板１１０の給電素子３７に対向する側とは反対側の表面に配置されてもよいし、基板１１０の側面に配置されてもよい。 FIG. 2 is a diagram schematically showing the positional relationship in the Z-axis direction of each component of the antenna device 1. The power feeding element 37 is provided in contact with the medium 41 disposed outside the substrate 80. Details of the medium 41 will be described later. The radiating element 31 is disposed away from the power feeding element 37, and is provided on the substrate 110 facing the substrate 80 at a distance H2 away from the substrate 80, for example, as shown in FIG. The substrate 110 is a substrate whose base material is a dielectric, a magnetic material, or a mixture of a dielectric and a magnetic material. A specific example of the base material of the substrate 110 is the same as that of the substrate 80 described above. In FIG. 2, the radiating element 31 is disposed on the surface of the substrate 110 on the side facing the power feeding element 37, but may be disposed on the surface of the substrate 110 opposite to the side facing the power feeding element 37. , May be disposed on the side surface of the substrate 110.
　給電素子３７と放射素子３１は、例えば、互いに電磁界結合可能な距離で離れて配置されている。放射素子３１は、給電部３６で給電素子３７を介して電磁界結合によって非接触で給電される。このように給電されることによって、放射素子３１は、アンテナの放射導体として機能する。図１に示すように、放射素子３１が２点間を結ぶ線状導体である場合、半波長ダイポールアンテナと同様の共振電流（定在波状に分布する電流）が放射素子３１上に形成される。すなわち、放射素子３１は、所定の周波数の半波長で共振するダイポールアンテナとして機能（以下、ダイポールモードという）する。また、放射素子がループ状導体であってもよい。放射素子がループ状導体である場合、ループアンテナと同様の共振電流（定在波状に分布する電流）が放射素子上に形成される。すなわち、放射素子は、所定の周波数の１波長で共振するループアンテナとして機能（以下、ループモードという）する。 The power feeding element 37 and the radiating element 31 are arranged, for example, separated by a distance that allows electromagnetic coupling to each other. The radiating element 31 is fed in a non-contact manner by electromagnetic coupling through the feeding element 37 in the feeding section 36. By being fed in this way, the radiating element 31 functions as a radiating conductor of the antenna. As shown in FIG. 1, when the radiating element 31 is a linear conductor connecting two points, a resonance current (current distributed in a standing wave shape) similar to that of a half-wave dipole antenna is formed on the radiating element 31. . That is, the radiating element 31 functions as a dipole antenna that resonates at a half wavelength of a predetermined frequency (hereinafter referred to as a dipole mode). Further, the radiating element may be a loop conductor. When the radiating element is a loop conductor, a resonance current (current distributed in a standing wave shape) similar to that of the loop antenna is formed on the radiating element. That is, the radiating element functions as a loop antenna that resonates at one wavelength of a predetermined frequency (hereinafter referred to as a loop mode).
　電磁界結合とは、電磁界の共鳴現象を利用した結合であり、例えば非特許文献（Ａ.Ｋｕｒｓ, ｅｔ ａｌ,“Ｗｉｒｅｌｅｓｓ Ｐｏｗｅｒ Ｔｒａｎｓｆｅｒ ｖｉａ Ｓｔｒｏｎｇｌｙ Ｃｏｕｐｌｅｄ Ｍａｇｎｅｔｉｃ Ｒｅｓｏｎａｎｃｅｓ,”Ｓｃｉｅｎｃｅ Ｅｘｐｒｅｓｓ,　Ｖｏｌ.３１７,　Ｎｏ.５８３４,　ｐｐ.８３－８６,　Ｊｕｌ.　２００７）に開示されている。電磁界結合は、電磁界共振結合又は電磁界共鳴結合とも称され、同じ周波数で共振する共振器同士を近接させ、一方の共振器を共振させると、共振器間に作られるニアフィールド（非放射界領域）での結合を介して、他方の共振器にエネルギーを伝送する技術である。また、電磁界結合とは、静電容量結合や電磁誘導による結合を除いた高周波における電界及び磁界による結合を意味する。なお、ここでの静電容量結合や電磁誘導による結合を除いたとは、これらの結合が全くなくなることを意味するのではなく、影響を及ぼさない程度に小さいことを意味する。給電素子３７と放射素子３１との間の媒体は、空気でもよいし、ガラスや樹脂材等の誘電体でもよい。なお、給電素子３７と放射素子３１との間には、グランドプレーンやディスプレイ等の導電性材料を配置しないことが好ましい。 Electromagnetic coupling is coupling utilizing the resonance phenomenon of electromagnetic fields. For example, non-patent literature (A. Kurs, et al, “Wireless Power Transfer via Strongly Coupled Magnetic Resonances,” Science Express3. 5834, pp. 83-86, Jul. 2007). Electromagnetic coupling is also referred to as electromagnetic resonance coupling or electromagnetic resonance coupling. When two resonators that resonate at the same frequency are brought close to each other and one of the resonators resonates, a near field (non-radiation) is created between the resonators. This is a technique for transmitting energy to the other resonator via coupling in the field region. Further, the electromagnetic field coupling means coupling by an electric field and a magnetic field at a high frequency excluding capacitive coupling and electromagnetic induction coupling. Here, excluding the capacitive coupling or coupling by electromagnetic induction does not mean that these couplings are eliminated at all, but means that the coupling is small enough not to be affected. The medium between the feeding element 37 and the radiating element 31 may be air or a dielectric such as glass or a resin material. In addition, it is preferable not to arrange a conductive material such as a ground plane or a display between the feeding element 37 and the radiating element 31.
　給電素子３７と放射素子３１を電磁界結合させることによって、衝撃に対して強い構造が得られる。すなわち、電磁界結合の利用によって、給電素子３７と放射素子３１を物理的に接触させることなく、給電素子３７を用いて放射素子３１に給電できるため、物理的な接触が必要な接触給電方式に比べて、衝撃に対して強い構造が得られる。 A structure strong against impact can be obtained by electromagnetically coupling the feeding element 37 and the radiating element 31. That is, by using electromagnetic field coupling, power can be supplied to the radiating element 31 using the power feeding element 37 without physically contacting the power feeding element 37 and the radiating element 31, so that a contact power feeding method that requires physical contact is adopted. In comparison, a structure strong against impact can be obtained.
　また、電磁界結合で給電する場合の方が、静電容量結合で給電する場合に比べて、給電素子３７と放射素子３１の離間距離（結合距離）の変化に対して、動作周波数における放射素子３１の動作利得（アンテナ利得）は低下しにくい。ここで、動作利得とは、アンテナの放射効率とリターンロスとの積で算出される量であり、入力電力に対するアンテナの効率として定義される量である。したがって、給電素子３７と放射素子３１を電磁界結合させることで、給電素子３７と放射素子３１の配置位置を決める自由度を高めることができ、位置ロバスト性も高めることができる。なお、位置ロバスト性が高いとは、給電素子３７及び放射素子３１の配置位置等がずれても、放射素子３１の動作利得に与える影響が低いことを意味する。また、給電素子３７と放射素子３１の配置位置を決める自由度が高いため、アンテナ装置１の設置に必要なスペースを容易に縮小できる点で有利である。また、電磁界結合の利用によって、容量板などの余計な部品を構成してなくても、給電素子３７を用いて放射素子３１に給電できるため、静電容量結合で給電する場合に比べて、簡易な構成での給電が可能である。 In addition, when the power is fed by electromagnetic coupling, the radiating element at the operating frequency is changed with respect to the change in the separation distance (coupling distance) between the feeding element 37 and the radiating element 31 as compared with the case of feeding by capacitive coupling. The operation gain (antenna gain) 31 is unlikely to decrease. Here, the operating gain is an amount calculated by the product of the radiation efficiency of the antenna and the return loss, and is an amount defined as the efficiency of the antenna with respect to input power. Accordingly, by electromagnetically coupling the feeding element 37 and the radiating element 31, it is possible to increase the degree of freedom in determining the arrangement positions of the feeding element 37 and the radiating element 31, and to improve the position robustness. Note that high position robustness means that even if the arrangement positions of the feeding element 37 and the radiating element 31 are shifted, the influence on the operation gain of the radiating element 31 is low. Further, since the degree of freedom in determining the arrangement positions of the feeding element 37 and the radiating element 31 is high, it is advantageous in that the space required for installing the antenna device 1 can be easily reduced. In addition, by using electromagnetic field coupling, it is possible to supply power to the radiating element 31 using the power feeding element 37 without configuring extra parts such as a capacitive plate. Power can be supplied with a simple configuration.
　また、給電素子３７が放射素子３１に給電する部位である給電部３６は、図１の場合、放射素子３１の一方の端部３４と他方の端部３５との間の中央部９０以外の部位（中央部９０と端部３４又は端部３５との間の部位）に位置している。このように、給電部３６を放射素子３１の基本モードの共振周波数における最も低いインピーダンスになる部分（この場合、中央部９０）以外の放射素子３１の部位に位置させることによって、アンテナ装置１のインピーダンスマッチングを容易に取ることができる。給電部３６は、放射素子３１と給電素子３７とが最近接する放射素子３１の導体部分のうち給電点３８に最も近い部分で定義される部位である。 Further, in the case of FIG. 1, the power feeding unit 36 that is a site where the power feeding element 37 feeds the radiation element 31 is a site other than the central portion 90 between the one end 34 and the other end 35 of the radiation element 31. It is located at (a portion between the central portion 90 and the end portion 34 or the end portion 35). As described above, the impedance of the antenna device 1 is determined by positioning the power feeding unit 36 at a portion of the radiating element 31 other than the portion (in this case, the central portion 90) having the lowest impedance at the resonance frequency of the fundamental mode of the radiating element 31. Matching can be easily taken. The power feeding unit 36 is a part defined by a portion closest to the feeding point 38 among the conductor portions of the radiating element 31 where the radiating element 31 and the power feeding element 37 are closest to each other.
　放射素子３１のインピーダンスは、ダイポールモードの場合、放射素子３１の中央部９０から端部３４又は端部３５の方に離れるにつれて高くなる。電磁界結合における高インピーダンスでの結合の場合、給電素子３７と放射素子３１間のインピーダンスが多少変化しても一定以上の高インピーダンスで結合していればインピーダンスマッチングに対する影響は小さい。よって、マッチングを容易に取るために、放射素子３１の給電部３６は、放射素子３１の高インピーダンスの部分に位置させることが好ましい。 In the dipole mode, the impedance of the radiating element 31 increases as the distance from the central portion 90 of the radiating element 31 increases toward the end portion 34 or the end portion 35. In the case of coupling with high impedance in electromagnetic coupling, even if the impedance between the feed element 37 and the radiating element 31 changes slightly, the effect on impedance matching is small if the coupling is performed with a high impedance above a certain level. Therefore, in order to make matching easy, it is preferable that the power feeding portion 36 of the radiating element 31 is positioned at a high impedance portion of the radiating element 31.
　例えば、アンテナ装置１のインピーダンスマッチングを容易に取るために、給電部３６は、放射素子３１の基本モードの共振周波数における最も低いインピーダンスになる部分（この場合、中央部９０）から放射素子３１の全長の１／８以上（好ましくは、１／６以上、さらに好ましくは、１／４以上）の距離を離した部位に位置するとよい。図１の場合、放射素子３１の全長は、Ｌ３２に相当し、給電部３６は、中央部９０に対して端部３４側に位置している。 For example, in order to easily perform impedance matching of the antenna device 1, the power feeding unit 36 is configured to have the entire length of the radiating element 31 from a portion (in this case, the central portion 90) having the lowest impedance at the resonance frequency of the fundamental mode of the radiating element 31. It is good to be located in the site | part which separated the distance of 1/8 or more (preferably 1/6 or more, more preferably 1/4 or more). In the case of FIG. 1, the total length of the radiating element 31 corresponds to L <b> 32, and the power feeding portion 36 is located on the end portion 34 side with respect to the central portion 90.
　一方、特許文献２のような静電容量結合のような低インピーダンスでの結合でインピーダンスマッチングがとれていると、例えば、容量板と放射導体との距離がわずかでも遠くなった場合、容量が小さくなって容量板と放射導体間のインピーダンスが高くなってしまいインピーダンスマッチングがとれなくなる。 On the other hand, when impedance matching is achieved by low impedance coupling such as capacitive coupling as in Patent Document 2, for example, when the distance between the capacitive plate and the radiation conductor is slightly increased, the capacitance is small. As a result, the impedance between the capacitive plate and the radiation conductor becomes high, and impedance matching cannot be obtained.
　また、給電素子３７の共振の基本モードを与える電気長をＬｅ３７、放射素子３１の共振の基本モードを与える電気長をＬｅ３１、放射素子３１の基本モードの共振周波数ｆ１における給電素子３７または放射素子３１上での波長をλとして、Ｌｅ３７が、（３／８）・λ以下であり、かつ、Ｌｅ３１が、放射素子３１の共振の基本モードがダイポールモードである場合、（３／８）・λ以上（５／８）・λ以下であり、放射素子３１の共振の基本モードがループモードである場合、（７／８）・λ以上（９／８）・λ以下であることが好ましい。 Further, the electrical length giving the fundamental mode of resonance of the feeding element 37 is Le37, the electrical length giving the fundamental mode of resonance of the radiating element 31 is Le31, and the feeding element 37 or the radiating element at the resonance frequency f 1 of the fundamental mode of the radiating element 31 When the wavelength on 31 is λ, Le37 is (3/8) · λ or less, and Le31 is (3/8) · λ when the fundamental mode of resonance of the radiating element 31 is a dipole mode. When the resonance mode of the radiating element 31 is the loop mode, the ratio is preferably (7/8) · λ or more and (9/8) · λ or less.
　前記Ｌｅ３７は、（３／８）・λ以下が好ましい。また、グランドプレーン７０の有無を含めその形状に自由度を与えたい場合には、（１／８）・λ以上（３／８）・λ以下がより好ましく、（３／１６）・λ以上（５／１６）・λ以下が特に好ましい。Ｌｅ３７がこの範囲内であれば、給電素子３７が放射素子３１の設計周波数（共振周波数ｆ１）にて良好に共振するため、アンテナ装置１のグランドプレーン７０に依存せずに給電素子３７と放射素子３１とが共鳴して良好な電磁界結合が得られ好ましい。 The Le37 is preferably (3/8) · λ or less. In addition, when it is desired to give flexibility to the shape including the presence or absence of the ground plane 70, (1/8) · λ or more (3/8) · λ or less is more preferable, and (3/16) · λ or more ( 5/16) · λ or less is particularly preferable. If Le 37 is within this range, the feed element 37 resonates satisfactorily at the design frequency (resonance frequency f 1 ) of the radiating element 31, and thus radiates with the feed element 37 without depending on the ground plane 70 of the antenna device 1. It is preferable that the element 31 resonates and good electromagnetic coupling is obtained.
　また、外縁部７１が放射素子３１に沿うようにグランドプレーン７０が形成された場合、給電素子３７は外縁部７１との相互作用により、給電素子３７とグランドプレーン上に、共振電流（定在波状に分布する電流）を形成することができ、放射素子３１と共鳴して電磁界結合する。そのため、給電素子３７の電気長Ｌｅ２１の下限値は特になく、給電素子３７が放射素子３１と物理的に電磁界結合できる程度の長さであればよい。また、電磁界結合が実現しているとは整合が取れているということを意味している。また、この場合、給電素子３７が放射素子３１の共振周波数に合わせて電気長を設計する必要がなく、給電素子３７を放射導体として自由に設計することが可能になるため、アンテナ装置１の多周波化を容易に実現できる。なお、放射素子３１に沿うグランドプレーン７０の外縁部７１は、給電素子３７の電気長と合計して設計周波数（共振周波数ｆ１１）の（１／４）・λ以上の長さであることがよい。 In addition, when the ground plane 70 is formed so that the outer edge portion 71 is along the radiating element 31, the feeding element 37 interacts with the outer edge portion 71 to cause a resonance current (standing wave shape) on the feeding element 37 and the ground plane. Current distributed in the electromagnetic field), and resonates with the radiating element 31 to be electromagnetically coupled. Therefore, there is no particular lower limit value for the electrical length Le21 of the power feeding element 37, and the lower limit value may be any length as long as the power feeding element 37 can be physically electromagnetically coupled to the radiation element 31. Also, the realization of electromagnetic field coupling means that matching is achieved. Further, in this case, it is not necessary for the feeding element 37 to design the electrical length in accordance with the resonance frequency of the radiating element 31, and the feeding element 37 can be freely designed as a radiating conductor. Frequency can be easily realized. The outer edge portion 71 of the ground plane 70 along the radiating element 31 has a total length of (1/4) · λ or more of the design frequency (resonance frequency f 11 ) with the electrical length of the feeding element 37. Good.
　なお給電素子３７の物理的な長さＬ３７（図１の場合、Ｄ１＋Ｌ３４に相当）は、整合回路などを含んでいない場合、放射素子の基本モードの共振周波数における真空中の電波の波長をλ０として、実装される環境による短縮効果の短縮率をｋ１としたとき、λｇ１＝λ０・ｋ１によって決定される。ここでｋ１は、給電素子３７の環境の実効比誘電率（εｒ）および実効比透磁率（μｒ）などの給電素子が設けられた誘電体基材等の媒質（環境）の比誘電率、比透磁率、および厚み、共振周波数などから算出される値である。すなわち、Ｌ３７は、（３／８）・λｇ１以下である。なお、短縮率は上記の物性から算出してもよいし、実測により求めても良い。例えば、短縮率を測定したい環境に設置された対象となる素子の共振周波数を測定し、任意の周波数ごとの短縮率が既知である環境において同じ素子の共振周波数を測定し、これらの共振周波数の差から短縮率を算出してもよい。 Note (in Figure 1, corresponding to D1 + L34) physical length L37 of the feed element 37, if it does not contain and matching circuit, a radio wave of a vacuum at the resonant frequency of the fundamental mode of radiation elements lambda 0 Assuming that the shortening rate of the shortening effect depending on the mounted environment is k 1 , it is determined by λ g1 = λ 0 · k 1 . Here, k 1 is the relative dielectric constant of a medium (environment) such as a dielectric substrate provided with a feed element such as an effective relative dielectric constant (ε r ) and an effective relative permeability (μ r ) of the environment of the feed element 37. It is a value calculated from the rate, relative permeability, thickness, resonance frequency, and the like. That is, L37 is (3/8) · λ g1 or less. The shortening rate may be calculated from the above physical properties or may be obtained by actual measurement. For example, the resonance frequency of the target element installed in the environment where the shortening rate is to be measured is measured, and the resonance frequency of the same element is measured in an environment where the shortening rate for each arbitrary frequency is known. The shortening rate may be calculated from the difference.
　給電素子３７の物理的な長さＬ３７はＬｅ３７を与える物理的な長さであり、その他の要素を含まない理想的な場合、Ｌｅ３７と等しい。給電素子３７が、整合回路などを含む場合、Ｌ３７は、ゼロを超え、Ｌｅ３７以下が好ましい。Ｌ３７はインダクタ等の整合回路を利用することにより短く（サイズを小さく）することが可能である。 The physical length L37 of the power feeding element 37 is a physical length that gives Le37, and is equal to Le37 in an ideal case that does not include other elements. When the power feeding element 37 includes a matching circuit or the like, L37 is preferably greater than zero and less than or equal to Le37. L37 can be shortened (size reduced) by using a matching circuit such as an inductor.
　また、前記Ｌｅ３１は、放射素子の共振の基本モードがダイポールモード（放射素子の両端が開放端であるような線状の導体）である場合、（３／８）・λ以上（５／８）・λ以下が好ましく、（７／１６）・λ以上（９／１６）・λ以下がより好ましく、（１５／３２）・λ以上（１７／３２）・λ以下が特に好ましい。また、高次モードを考慮すると、前記Ｌｅ３１は、（３／８）・λ・ｍ以上（５／８）・λ・ｍ以下が好ましく、（７／１６）・λ・ｍ以上（９／１６）・λ・ｍ以下がより好ましく、（１５／３２）・λ・ｍ以上（１７／３２）・λ・ｍ以下が特に好ましい。ただし、ｍは高次モードのモード数であり、自然数である。ｍは１～５の整数が好ましく、１～３の整数が特に好ましい。ｍ＝１の場合は基本モードである。Ｌｅ３１がこの範囲内であれば、放射素子３１が充分に放射導体として機能し、アンテナ装置１の効率が良く好ましい。 Further, when the fundamental mode of resonance of the radiating element is a dipole mode (a linear conductor in which both ends of the radiating element are open ends), the Le31 is (3/8) · λ or more (5/8) Λ or less is preferred, (7/16) · λ or more (9/16) · λ or less is more preferred, and (15/32) · λ or more (17/32) · λ or less is particularly preferred. In consideration of higher order modes, the Le31 is preferably (3/8) · λ · m or more and (5/8) · λ · m or less, and (7/16) · λ · m or more (9/16). ) · Λ · m or less, more preferably (15/32) · λ · m or more and (17/32) · λ · m or less. However, m is the number of modes in the higher order mode and is a natural number. m is preferably an integer of 1 to 5, particularly preferably an integer of 1 to 3. When m = 1, it is a basic mode. If Le31 is within this range, the radiating element 31 sufficiently functions as a radiating conductor, and the efficiency of the antenna device 1 is preferable.
　また同様に、放射素子の共振の基本モードがループモード（放射素子がループ状の導体）である場合、前記Ｌｅ３１は、（７／８）・λ以上（９／８）・λ以下が好ましく、（１５／１６）・λ以上（１７／１６）・λ以下がより好ましく、（３１／３２）・λ以上（３３／３２）・λ以下が特に好ましい。また、高次モードについてはダイポールモードと同様に、前記Ｌｅ３１は、（７／８）・λ・ｍ以上（９／８）・λ・ｍ以下が好ましく、（１５／１６）・λ・ｍ以上（１７／１６）・λ・ｍ以下がより好ましく、（３１／３２）・λ・ｍ以上（３３／３２）・λ・ｍ以下が特に好ましい。 Similarly, when the fundamental mode of resonance of the radiating element is a loop mode (the radiating element is a loop-shaped conductor), the Le31 is preferably (7/8) · λ or more and (9/8) · λ or less, It is more preferably (15/16) · λ or more and (17/16) · λ or less, particularly preferably (31/32) · λ or more and (33/32) · λ or less. As for the high-order mode, as in the dipole mode, the Le31 is preferably (7/8) · λ · m or more and (9/8) · λ · m or less, and (15/16) · λ · m or more. (17/16) · λ · m or less is more preferable, and (31/32) · λ · m or more and (33/32) · λ · m or less is particularly preferable.
　なお放射素子３１の物理的な長さＬ３１（図１の場合、Ｌ３２に相当）は、放射素子の基本モードの共振周波数における真空中の電波の波長をλ０として、実装される環境による波長短縮効果の短縮率をｋ２としたとき、λｇ２＝λ０・ｋ２によって決定される。ここでｋ２は、放射素子３１の環境の実効比誘電率（εｒ２）および実効比透磁率（μｒ２）などの放射素子が設けられた誘電体基材等の媒質（環境）の比誘電率、比透磁率、および厚み、共振周波数などから算出される値である。すなわち、Ｌ３１は、放射素子の共振の基本モードがダイポールモードである場合、（３／８）・λｇ２以上（５／８）・λｇ２以下、放射素子の共振の基本モードがループモードである場合、（７／８）・λｇ２以上（９／８）・λｇ２以下である。放射素子３１の物理的な長さＬ３１は、Ｌｅ３１を与える物理的な長さであり、その他の要素を含まない理想的な場合、Ｌｅ３１と等しい。Ｌ３１は、インダクタ等の整合回路を利用することにより短くしたとしても、ゼロを超え、Ｌｅ３１以下が好ましく、Ｌｅ３１の０．４倍以上１倍以下が特に好ましい。 The physical length L31 of the radiating element 31 (corresponding to L32 in the case of FIG. 1) is a wavelength shortening depending on the mounting environment, where λ 0 is the wavelength of the radio wave in vacuum at the resonance frequency of the fundamental mode of the radiating element. when the fractional shortening effect was k 2, it is determined by λ g2 = λ 0 · k 2 . Here, k 2 is a relative dielectric constant of a medium (environment) such as a dielectric substrate provided with a radiating element such as an effective relative permittivity (ε r2 ) and an effective relative permeability (μ r2 ) of the environment of the radiating element 31. It is a value calculated from the rate, relative permeability, thickness, resonance frequency, and the like. That is, when the fundamental mode of resonance of the radiating element is a dipole mode, L31 is (3/8) · λ g2 or more and (5/8) · λ g2 or less, and the fundamental mode of resonance of the radiating element is a loop mode. In this case, it is (7/8) · λ g2 or more and (9/8) · λ g2 or less. The physical length L31 of the radiating element 31 is the physical length that gives Le31, and is equal to Le31 in an ideal case that does not include other elements. Even if L31 is shortened by using a matching circuit such as an inductor, it exceeds zero, preferably Le31 or less, and particularly preferably 0.4 times or more and 1 time or less of Le31.
　例えば、媒質４１が、比誘電率＝３．４、ｔａｎδ＝０．００３、Ｚ軸方向の厚さ＝０．８ｍｍの特性を有する場合のＬ３７の長さは、給電素子３７を放射導体として利用する場合の給電素子３７の設計周波数を３．５ＧＨｚとしたときに、２０ｍｍである。また、例えば、基板１１０が、比誘電率＝３．４、ｔａｎδ＝０．００３、Ｚ軸方向の厚さ＝０．８ｍｍの特性を有する場合のＬ３１の長さは、放射素子３１の設計周波数を２．２ＧＨｚとしたときに、３４ｍｍである。 For example, when the medium 41 has characteristics of relative permittivity = 3.4, tan δ = 0.003, and thickness in the Z-axis direction = 0.8 mm, the length of L37 uses the feed element 37 as a radiation conductor. When the design frequency of the power feeding element 37 is 3.5 GHz, it is 20 mm. Further, for example, when the substrate 110 has characteristics of relative permittivity = 3.4, tan δ = 0.003, and thickness in the Z-axis direction = 0.8 mm, the length of L31 is the design frequency of the radiating element 31. 34 mm when the frequency is 2.2 GHz.
　また、図１に示すように給電素子３７とグランドプレーン７０の外縁部７１との相互作用を利用できる場合おいて、給電素子３７を前述のように放射素子として機能させてもよい。放射素子３１は、給電素子３７によって給電部３６で非接触に電磁界結合で給電されることにより、例えば、λ／２ダイポールアンテナとして機能する放射導体である。一方、給電素子３７は、放射素子３１に対して給電可能な線状の給電導体であるが、給電点３８で給電されることにより、モノポールアンテナ（例えば、λ／４モノポールアンテナ）として機能することも可能な放射導体である。放射素子３１の共振周波数をｆ１、給電素子３７の共振周波数をｆ２と設定し、給電素子３７の長さを周波数ｆ２で共振するモノポールアンテナとして調整すれば、給電素子の放射機能を利用することができ、アンテナ装置１の多周波化を容易に実現できる。 Further, as shown in FIG. 1, when the interaction between the feeding element 37 and the outer edge portion 71 of the ground plane 70 can be used, the feeding element 37 may function as a radiating element as described above. The radiating element 31 is a radiating conductor that functions as, for example, a λ / 2 dipole antenna by being fed by the feeding element 37 in a non-contact manner through electromagnetic coupling by the feeding portion 36. On the other hand, the feed element 37 is a linear feed conductor that can feed power to the radiating element 31, and functions as a monopole antenna (for example, a λ / 4 monopole antenna) by being fed at a feed point 38. It is a radiation conductor that can also be used. If the resonance frequency of the radiating element 31 is set to f 1 , the resonance frequency of the feeding element 37 is set to f 2, and the length of the feeding element 37 is adjusted as a monopole antenna that resonates at the frequency f 2 , Therefore, the antenna device 1 can be easily multi-frequencyd.
　給電素子３７の放射機能を利用したときの物理的な長さＬ３７は、整合回路などを含んでいない場合、給電素子３７の共振周波数ｆ２における真空中の電波の波長をλ１として、実装される環境による波長短縮効果の短縮率をｋ１としたとき、λｇ３＝λ１・ｋ１によって決定される。ここでｋ１は、給電素子３７の環境の実効比誘電率（εｒ１）および実効比透磁率（μｒ１）などの給電素子が設けられた誘電体基材等の媒質（環境）の比誘電率、比透磁率、および厚み、共振周波数などから算出される値である。すなわち、Ｌ３７は、（１／８）・λｇ３以下（３／８）・λｇ３以下であり、好ましくは、（３／１６）・λｇ３以上（５／１６）・λｇ３以下である。給電素子３７の物理的な長さＬ３７はＬｅ３７を与える物理的な長さであり、その他の要素を含まない理想的な場合、Ｌｅ３７と等しい。給電素子３７が、整合回路などを含む場合、Ｌ３７は、ゼロを超え、Ｌｅ３７以下が好ましい。Ｌ３７はインダクタ等の整合回路を利用することにより短く（サイズを小さく）することが可能である。 When the radiation function of the feed element 37 is used, the physical length L37 is mounted with the wavelength of the radio wave in vacuum at the resonance frequency f 2 of the feed element 37 being λ 1 when a matching circuit or the like is not included. Λ g3 = λ 1 · k 1 where k 1 is the shortening rate of the wavelength shortening effect due to the environment. Here, k 1 is a relative dielectric constant of a medium (environment) such as a dielectric substrate provided with a feeding element such as an effective relative dielectric constant (ε r1 ) and an effective relative permeability (μ r1 ) of the environment of the feeding element 37. It is a value calculated from the rate, relative permeability, thickness, resonance frequency, and the like. That is, L37 is (1/8) · λ g3 or less (3/8) · λ g3 or less, preferably (3/16) · λ g3 or more (5/16) · λ g3 or less. The physical length L37 of the feeding element 37 is a physical length that gives Le37, and is equal to Le37 in an ideal case that does not include other elements. When the power feeding element 37 includes a matching circuit or the like, L37 is preferably greater than zero and less than or equal to Le37. L37 can be shortened (size reduced) by using a matching circuit such as an inductor.
　また、放射素子３１の基本モードの共振周波数における真空中の電波波長をλ０とする場合、給電素子３７と放射素子３１との最短距離Ｈ４は、０．２×λ０以下（より好ましくは、０．１×λ０以下、更に好ましくは、０．０５×λ０以下）であると好適である。給電素子３７と放射素子３１をこのような最短距離Ｈ４だけ離して配置することによって、放射素子３１の動作利得を向上させる点で有利である。 When the radio wave wavelength in vacuum at the resonance frequency of the fundamental mode of the radiating element 31 is λ 0 , the shortest distance H4 between the feeding element 37 and the radiating element 31 is 0.2 × λ 0 or less (more preferably, 0.1 × λ 0 or less, more preferably 0.05 × λ 0 or less). Disposing the feeding element 37 and the radiating element 31 by such a shortest distance H4 is advantageous in that the operating gain of the radiating element 31 is improved.
　なお、最短距離Ｈ４とは、給電素子３７と放射素子３１において、最も近接している部位間の直線距離である。また、給電素子３７と放射素子３１は、両者が電磁界結合していれば、任意の方向から見たときに、交差しても交差しなくてもよいし、その交差角度も任意の角度でよい。 In addition, the shortest distance H4 is a linear distance between the closest parts in the feeding element 37 and the radiating element 31. Further, as long as the feeding element 37 and the radiating element 31 are electromagnetically coupled to each other, the feeding element 37 and the radiating element 31 may or may not intersect when viewed from an arbitrary direction, and the intersection angle may be an arbitrary angle. Good.
　また、給電素子３７と放射素子３１とが最短距離Ｈ４で並走する距離は、放射素子３１の物理的な長さの３／８以下であることが好ましい。より好ましくは、１／４以下、更に好ましくは、１／８以下である。最短距離Ｈ４となる位置は給電素子３７と放射素子３１との結合が強い部位であり、最短距離Ｈ４で並走する距離が長いと、放射素子３１のインピーダンスが高い部分と低い部分の両方と強く結合することになるため、インピーダンスマッチングが取れない場合がある。よって、放射素子３１のインピーダンスの変化が少ない部位のみと強く結合するために最短距離Ｈ４で並走する距離は短い方がインピーダンスマッチングの点で有利である。 In addition, the distance that the feeding element 37 and the radiating element 31 run in parallel at the shortest distance H4 is preferably 3/8 or less of the physical length of the radiating element 31. More preferably, it is 1/4 or less, and more preferably 1/8 or less. The position where the shortest distance H4 is located is a portion where the coupling between the feeding element 37 and the radiating element 31 is strong, and if the parallel distance at the shortest distance H4 is long, the radiating element 31 has a strong and low impedance portion. Since they are coupled, impedance matching may not be achieved. Therefore, in order to strongly couple only with a portion where the change in impedance of the radiating element 31 is small, it is advantageous in terms of impedance matching that the distance of parallel running at the shortest distance H4 is short.
　＜給電素子３７に接する媒質４１について＞
　給電素子３７の物理的な長さＬ３７は、ｋ１に比例する。そのため、媒質４１の比誘電率εｒ１と媒質４１の比透磁率μｒ１との積Ｐ１を、基板８０の比誘電率εｒと基板８０の比透磁率μｒとの積Ｐ２よりも大きくすることにより、積Ｐ１が積Ｐ２と等しい場合に比べて、長さＬ３７を短くできる。これにより、給電素子３７を小型化できるため、アンテナ装置１の設置スペースを削減し、非接触給電を簡易な構成で実現できる。 <Regarding Medium 41 in Contact with Feeding Element 37>
Physical length L37 of the feed element 37 is proportional to k 1. Therefore, the product P1 of the relative permittivity ε r1 of the medium 41 and the relative permeability μ r1 of the medium 41 is made larger than the product P2 of the relative permittivity ε r of the substrate 80 and the relative permeability μ r of the substrate 80. Thus, the length L37 can be shortened as compared with the case where the product P1 is equal to the product P2. Thereby, since the power feeding element 37 can be reduced in size, the installation space of the antenna device 1 can be reduced, and non-contact power feeding can be realized with a simple configuration.
　媒質４１は、誘電体、磁性体、又は誘電体と磁性体との混合物を基材とする基体である。媒質４１の基材として誘電体が用いられる場合、波長短縮効果によって、給電素子３７の小型化ができる。誘電体の具体例として、樹脂、ガラス、ガラスセラミックス、ＬＴＣＣ（Ｌｏｗ　Ｔｅｍｐｅｒａｔｕｒｅ　Ｃｏ－Ｆｉｒｅｄ　Ｃｅｒａｍｉｃｓ）、アルミナなどが挙げられる。媒質４１の基材として磁性体が用いられる場合、給電素子３７のＱ値の低下によって、アンテナ装置１の広帯域化ができる。媒質４１の基材として誘電体と磁性体との混合物が用いられる場合、給電素子３７の小型化とアンテナ装置１の広帯域化が可能である。誘電体と磁性体との混合物の具体例として、ＦｅやＮｉ、Ｃｏなどの遷移元素、ＳｍやＮｄなどの希土類元素を含む金属あるいは酸化物のいずれかを有していればよく、例えば、六方晶系フェライト、スピネル系フェライト（Ｍｎ－Ｚｎ系フェライト、Ｎｉ－Ｚｎ系フェライトなど）、ガーネット系フェライト、パーマロイ、センダスト（登録商標）などが挙げられる。 The medium 41 is a base body based on a dielectric material, a magnetic material, or a mixture of a dielectric material and a magnetic material. When a dielectric is used as the base material of the medium 41, the feeding element 37 can be downsized due to the wavelength shortening effect. Specific examples of the dielectric include resin, glass, glass ceramics, LTCC (Low Temperature Co-Fired Ceramics), and alumina. When a magnetic material is used as the base material of the medium 41, the antenna device 1 can be broadened by reducing the Q value of the feed element 37. When a mixture of a dielectric material and a magnetic material is used as the base material of the medium 41, the feed element 37 can be downsized and the antenna device 1 can be widened. As a specific example of a mixture of a dielectric and a magnetic material, it is sufficient to have either a transition element such as Fe, Ni, or Co, or a metal or oxide containing a rare earth element such as Sm or Nd. Examples thereof include crystal ferrite, spinel ferrite (Mn—Zn ferrite, Ni—Zn ferrite, etc.), garnet ferrite, permalloy, and Sendust (registered trademark).
　基板８０の基材が誘電体である場合、基板８０の比誘電率εｒと基板８０の比透磁率μｒとの積Ｐ２は、例えば、２以上５以下である。給電素子３７を小型化するには、媒質４１の比誘電率εｒ１と媒質４１の比透磁率μｒ１との積Ｐ１は、６以上であることが好ましく、１０以上であることがより好ましい。また、積Ｐ１は、製造上又はアンテナとして機能させる上で、１０００以下であることが好ましく、４００以下であることがより好ましい。 When the base material of the substrate 80 is a dielectric, the product P2 of the relative permittivity ε r of the substrate 80 and the relative permeability μ r of the substrate 80 is, for example, 2 or more and 5 or less. In order to reduce the size of the feeding element 37, the product P1 of the relative permittivity ε r1 of the medium 41 and the relative permeability μ r1 of the medium 41 is preferably 6 or more, and more preferably 10 or more. In addition, the product P1 is preferably 1000 or less, more preferably 400 or less in terms of manufacturing or functioning as an antenna.
　例えば図２に示されるように、給電素子３７と媒質４１とを含んで構成されたチップ部品４０が基板８０に実装される。これにより、媒質４１に接した給電素子３７を基板８０に容易に実装できる。 For example, as shown in FIG. 2, a chip component 40 including a power feeding element 37 and a medium 41 is mounted on a substrate 80. Thereby, the power feeding element 37 in contact with the medium 41 can be easily mounted on the substrate 80.
　基板８０は、給電点３８に接続されるストリップ導体８２を備えた伝送線路を有している。ストリップ導体８２は、例えば、グランドプレーン７０との間に基板８０を挟むように基板８０の表面に形成された信号線である。 The substrate 80 has a transmission line provided with a strip conductor 82 connected to the feeding point 38. The strip conductor 82 is a signal line formed on the surface of the substrate 80 so that the substrate 80 is sandwiched between the strip conductor 82 and the ground plane 70, for example.
　また、基板８０は、給電点３８に接続されるランド８１を有している。ランド８１は、給電素子３７と給電点３８とを電気的に接続するための導体部位であり、基板８０の表面に形成されている。チップ部品４０は、給電素子３７がビア等の配線４３を介して接続される電極４４を有する。電極４４がはんだ等でランド８１に接合されることによって、チップ部品４０は基板８０の表面に実装され、給電素子３７は給電点３８に電気的に接続される。 The substrate 80 has a land 81 connected to the feeding point 38. The land 81 is a conductor portion for electrically connecting the power feeding element 37 and the power feeding point 38, and is formed on the surface of the substrate 80. The chip component 40 includes an electrode 44 to which the power feeding element 37 is connected via a wiring 43 such as a via. By bonding the electrode 44 to the land 81 with solder or the like, the chip component 40 is mounted on the surface of the substrate 80, and the power feeding element 37 is electrically connected to the power feeding point 38.
　給電素子３７は、媒質４１に囲まれるようにチップ部品４０の内部に配置されることが、給電素子３７の小型化の点で有利である。しかしながら、給電素子３７が、媒質４１に接した状態で、チップ部品４０の表面４２に露出してもよい。 It is advantageous in terms of miniaturization of the power feeding element 37 that the power feeding element 37 is disposed inside the chip component 40 so as to be surrounded by the medium 41. However, the power feeding element 37 may be exposed on the surface 42 of the chip component 40 while being in contact with the medium 41.
　また、チップ部品４０は、放射素子３１又は給電素子３７のマッチングを行うマッチング回路４５を有してよい。マッチング回路は、リアクタンス素子を有する回路であり、整合回路とも呼ばれる。マッチング回路４５は、例えば、給電点３８に接続される伝送線路を介して接続される給電回路（例えば、基板８０に実装されるＩＣチップ等の集積回路）と、放射素子３１又は給電素子３７とのマッチングを行う回路である。マッチング回路４５は、チップ部品４０の内部に設けられてもよいし、チップ部品４０の表面に設けられてもよい。マッチング回路４５をチップ部品４０に設けることによって、マッチング回路４５が基板８０の表面に直接実装される場合に比べて、基板８０の小型化又は基板８０の実装可能面積の拡大化が可能である。また、チップ部品４０は、マッチング回路以外にも、高調波を減衰するフィルタや、給電点に接続される給電素子を複数の給電素子の中から選択的に切り替えるスイッチなどの機能をチップ部品４０の内部又は表面に有していてもよい。 Further, the chip component 40 may include a matching circuit 45 that performs matching of the radiating element 31 or the power feeding element 37. The matching circuit is a circuit having a reactance element and is also called a matching circuit. The matching circuit 45 includes, for example, a power supply circuit connected via a transmission line connected to the power supply point 38 (for example, an integrated circuit such as an IC chip mounted on the substrate 80), the radiation element 31 or the power supply element 37, and the like. Is a circuit that performs the matching. The matching circuit 45 may be provided inside the chip component 40 or may be provided on the surface of the chip component 40. By providing the matching circuit 45 on the chip component 40, the substrate 80 can be downsized or the mountable area of the substrate 80 can be increased as compared with the case where the matching circuit 45 is directly mounted on the surface of the substrate 80. In addition to the matching circuit, the chip component 40 has functions such as a filter that attenuates harmonics and a switch that selectively switches a power feeding element connected to the power feeding point from a plurality of power feeding elements. You may have in the inside or the surface.
　マッチング回路４５又はフィルタは、放射素子３１又は給電素子３７のインピーダンスと給電点３８に接続される伝送線路又は給電線のインピーダンスとのマッチングをチューニングする機能を有してもよい。また、マッチング回路４５は、ＭＩＭＯアンテナにおいて、アンテナ素子間の結合を低減するための減結合回路を含んでもよい。 The matching circuit 45 or the filter may have a function of tuning matching between the impedance of the radiating element 31 or the feeding element 37 and the impedance of the transmission line or the feeding line connected to the feeding point 38. In addition, the matching circuit 45 may include a decoupling circuit for reducing coupling between antenna elements in the MIMO antenna.
　＜アンテナ装置の搭載装置＞
　本発明の実施形態に係るアンテナ装置は、無線装置（例えば、人が携帯可能な通信端末）に搭載される。無線装置の具体例として、情報端末機、携帯電話、スマートフォン、パソコン、ゲーム機、テレビ、音楽や映像のプレーヤーなどの電子機器が挙げられる。 <Attachment device of antenna device>
An antenna device according to an embodiment of the present invention is mounted on a wireless device (for example, a communication terminal that can be carried by a person). Specific examples of the wireless device include electronic devices such as an information terminal, a mobile phone, a smartphone, a personal computer, a game machine, a television, and a music and video player.
　例えば図２において、ディスプレイを有する無線通信装置１００（無線装置の一例）にアンテナ装置１が搭載される場合、基板１１０は、例えば、ディスプレイの画像表示面を全面的に覆うカバーガラスであってもよいし、基板８０が固定される筐体（特には、表蓋、裏蓋、側壁など）であってもよい。カバーガラスは、ディスプレイに表示される画像を透明又はユーザが視認可能な程度に半透明な誘電体基板であって、ディスプレイの上に積層配置された平板状の部材である。 For example, in FIG. 2, when the antenna device 1 is mounted on a wireless communication device 100 (an example of a wireless device) having a display, the substrate 110 may be, for example, a cover glass that covers the entire image display surface of the display. Alternatively, it may be a casing (in particular, a front cover, a back cover, a side wall, etc.) to which the substrate 80 is fixed. The cover glass is a dielectric substrate that is transparent or translucent enough to allow a user to visually recognize an image displayed on the display, and is a flat plate member that is laminated on the display.
　放射素子３１がカバーガラスの表面に設けられる場合、放射素子３１は、銅や銀などの導体ペーストをカバーガラスの表面に塗って焼成して形成されるとよい。このときの導体ペーストとして、カバーガラスに利用される化学強化ガラスの強化が鈍らない程度の温度で焼成できる低温焼成可能な導体ペーストを利用するとよい。また、酸化による導体の劣化を防ぐために、メッキなどを施してもよい。また、カバーガラスには加飾印刷が施されていてもよく、加飾印刷された部分に導体が形成されていてもよい。また、配線などを隠す目的でカバーガラスの周縁に黒色隠蔽膜が形成されている場合、放射素子３１が黒色隠蔽膜上に形成されてもよい。 When the radiating element 31 is provided on the surface of the cover glass, the radiating element 31 may be formed by applying a conductive paste such as copper or silver on the surface of the cover glass and baking it. As the conductor paste at this time, a conductor paste that can be fired at a low temperature that can be fired at a temperature at which the strengthening of the chemically strengthened glass used for the cover glass is not dulled may be used. Further, plating or the like may be applied to prevent deterioration of the conductor due to oxidation. Further, the cover glass may be subjected to decorative printing, and a conductor may be formed on the decorative printed portion. Further, when a black masking film is formed on the periphery of the cover glass for the purpose of concealing the wiring or the like, the radiating element 31 may be formed on the black masking film.
　また、給電素子３７及び放射素子３１、並びにグランドプレーン７０のＺ軸に平行な高さ方向における各位置は、互いに異なっていてもよいし、全て又は一部のみが同じでもよい。 Further, the positions of the feeding element 37, the radiating element 31, and the ground plane 70 in the height direction parallel to the Z-axis may be different from each other, or all or only a part thereof may be the same.
　また、一つの給電素子３７で複数の放射素子に給電してもよい。複数の放射素子を利用することにより、マルチバンド化、ワイドバンド化、指向性制御等の実施が容易となる。また、複数のアンテナ装置が一つの無線通信装置に搭載されてもよい。 Further, a plurality of radiating elements may be fed by one feeding element 37. By using a plurality of radiating elements, implementation of multiband, wideband, directivity control, etc. becomes easy. A plurality of antenna devices may be mounted on one wireless communication device.
　複数の給電素子がチップ部品の内部又は表面に設けられてもよい。図３は、２つの給電素子３７Ａ，３７Ｂが設けられたチップ部品４６を備えるアンテナ装置２の一例を部分的に示す斜視図である。給電素子３７Ａ，３７Ｂは、媒質４１に接する。アンテナ装置２は、基板８０と、チップ部品４６と、２つの放射素子３１Ａ，３１Ｂとを備える。基板８０は、所定の間隔を空けて互いに近接する２つの給電点３８Ａ，３８Ｂを備える。給電素子３７Ａは、給電点３８Ａにチップ部品４６の電極４４Ａ及び配線４３Ａを介して接続され、放射素子３１Ａに非接触で給電する線状導体である。給電素子３７Ｂは、給電点３８Ｂにチップ部品４６の電極４４Ｂ及び配線４３Ｂを介して接続され、放射素子３１Ｂに非接触で給電する線状導体である。配線４３Ａ及び配線４３Ｂは、例えば、ビアである。 A plurality of power feeding elements may be provided inside or on the surface of the chip component. FIG. 3 is a perspective view partially showing an example of the antenna device 2 including the chip component 46 provided with the two power feeding elements 37A and 37B. The power feeding elements 37 </ b> A and 37 </ b> B are in contact with the medium 41. The antenna device 2 includes a substrate 80, a chip component 46, and two radiation elements 31A and 31B. The substrate 80 includes two feeding points 38A and 38B that are close to each other with a predetermined gap therebetween. The power feeding element 37A is a linear conductor that is connected to the power feeding point 38A via the electrode 44A and the wiring 43A of the chip component 46 and feeds power to the radiation element 31A in a non-contact manner. The power feeding element 37B is a linear conductor that is connected to the power feeding point 38B via the electrode 44B and the wiring 43B of the chip component 46 and feeds power to the radiating element 31B in a non-contact manner. The wiring 43A and the wiring 43B are vias, for example.
　アンテナ装置２は、給電素子３７Ａと放射素子３１Ａとを有する第１のダイポールアンテナ素子１０と、給電素子３７Ｂと放射素子３１Ｂとを有する第２のダイポールアンテナ素子２０とを備える。 The antenna device 2 includes a first dipole antenna element 10 having a feeding element 37A and a radiating element 31A, and a second dipole antenna element 20 having a feeding element 37B and a radiating element 31B.
　第１のダイポールアンテナ素子１０と第２のダイポールアンテナ素子２０との間の相関係数が低いので、アンテナ装置２を、ＭＩＭＯ（Ｍｕｌｔｉｐｌｅ　Ｉｎｐｕｔ　Ｍｕｌｔｉｐｌｅ　Ｏｕｔｐｕｔ）アンテナとして機能させることが可能である。ＭＩＭＯアンテナは、複数のアンテナ素子を用いて所定の周波数において多重の入出力が可能なマルチアンテナである。 Since the correlation coefficient between the first dipole antenna element 10 and the second dipole antenna element 20 is low, the antenna device 2 can function as a MIMO (Multiple Input Multiple Output) antenna. A MIMO antenna is a multi-antenna capable of multiple input / output at a predetermined frequency using a plurality of antenna elements.
　また、単数又は複数の放射素子がチップ部品の内部又は表面に設けられてもよい。図４は、１つの給電素子３７と１つの放射素子３１Ｃとが設けられたチップ部品４７を備えるアンテナ装置３の一例を部分的に示す斜視図である。給電素子３７も放射素子３１Ｃも、媒質４１に接する。アンテナ装置３は、基板８０と、チップ部品４７と、放射素子３１Ｃから離れて配置される放射素子３１Ｄとを備える。チップ部品４７から離れて配置される放射素子３１Ｄは、媒質４１に非接触の線状導体である。給電素子３７は、給電点３８にチップ部品４７の電極４４及び配線４３を介して接続される。給電素子３７は、チップ部品４７に設けられた放射素子３１Ｃに非接触で給電し、且つ、チップ部品４７から離れて配置される放射素子３１Ｄに非接触で給電する線状導体である。 Further, one or a plurality of radiating elements may be provided inside or on the surface of the chip component. FIG. 4 is a perspective view partially showing an example of the antenna device 3 including the chip component 47 provided with one feeding element 37 and one radiating element 31C. Both the feeding element 37 and the radiating element 31 </ b> C are in contact with the medium 41. The antenna device 3 includes a substrate 80, a chip component 47, and a radiating element 31D arranged away from the radiating element 31C. The radiating element 31 </ b> D arranged away from the chip component 47 is a linear conductor that is not in contact with the medium 41. The power feeding element 37 is connected to the power feeding point 38 via the electrode 44 and the wiring 43 of the chip component 47. The power feeding element 37 is a linear conductor that feeds power to the radiating element 31 </ b> C provided in the chip component 47 in a contactless manner and feeds power to the radiating element 31 </ b> D arranged away from the chip component 47 in a contactless manner.
　アンテナ装置３は、放射素子３１Ｃが共振する周波数と放射素子３１Ｄが共振する周波数とを合わせた複数の周波数で励振するマルチバンドアンテナである。 The antenna device 3 is a multiband antenna that excites at a plurality of frequencies including the frequency at which the radiating element 31C resonates and the frequency at which the radiating element 31D resonates.
　図１，２で示した形態のアンテナ装置１をシミュレーション解析したときのＳ１１特性について説明する。Ｓ１１特性とは、高周波電子部品等の特性の一種であり、本明細書においては周波数に対する反射損失（リターンロス）で表す。電磁界シミュレータとして、Ｍｉｃｒｏｗａｖｅ　Ｓｔｕｄｉｏ（登録商標）（ＣＳＴ社）を使用した。 The S11 characteristic when the antenna device 1 having the form shown in FIGS. The S11 characteristic is a kind of characteristic of high-frequency electronic components and the like, and is represented by a reflection loss (return loss) with respect to the frequency in this specification. As an electromagnetic simulator, Microwave Studio (registered trademark) (CST) was used.
　Ｓ１１特性の測定時の図１で示した各寸法は、単位をｍｍとすると、
　Ｄ１：３．７５
　Ｌ３２：４５
　Ｗ３１：１．９
　Ｗ３２：１．９
　Ｗ３３：１
とした。 Each dimension shown in FIG. 1 at the time of measuring the S11 characteristic is expressed in units of mm.
D1: 3.75
L32: 45
W31: 1.9
W32: 1.9
W33: 1
It was.
　また、グランドプレーン７０、給電素子３７及び放射素子３１において、Ｚ軸方向の厚さ（高さ）は０．０１８ｍｍとした。また、基板８０は、比誘電率εｒ＝３．３、ｔａｎδ＝０．００３に設定し、基板１１０は、比誘電率εｒ＝１、に設定した。また、グランドプレーン７０の形状は、Ｘ軸方向が３０ｍｍでＹ軸方向が５０ｍｍの長方形とし、基板８０の形状は、Ｘ軸方向が３０ｍｍでＹ軸方向が６０ｍｍの長方形とした。また、図２において、Ｈ１を０．８ｍｍ、Ｈ２を１．５ｍｍ、Ｈ３を１ｍｍに設定した。また、給電素子３７と放射素子３１との最短距離Ｈ４を０．５ｍｍに設定し、給電素子３７と放射素子３１とを電磁界結合させた。 Further, in the ground plane 70, the power feeding element 37, and the radiating element 31, the thickness (height) in the Z-axis direction was set to 0.018 mm. The substrate 80 was set to have a relative dielectric constant ε r = 3.3 and tan δ = 0.003, and the substrate 110 was set to have a relative dielectric constant ε r = 1. The shape of the ground plane 70 was a rectangle with an X-axis direction of 30 mm and a Y-axis direction of 50 mm, and the substrate 80 was a rectangle with an X-axis direction of 30 mm and a Y-axis direction of 60 mm. In FIG. 2, H1 is set to 0.8 mm, H2 is set to 1.5 mm, and H3 is set to 1 mm. The shortest distance H4 between the feeding element 37 and the radiating element 31 was set to 0.5 mm, and the feeding element 37 and the radiating element 31 were electromagnetically coupled.
　図５は、図１，２で示した形態のアンテナ装置１をシミュレーション解析したときの解析モデルの一部を拡大した斜視図である。Ｌ４１，Ｌ４２，Ｌ４３は、それぞれ、チップ部品４０の媒質４１における、横長、縦長、高さを想定していて、給電素子３７の一部の導体部分（放射素子３１の導体部分３２に並走する部分）の長さＬ３４（図１参照）は、横長Ｌ４１と同じ長さに設定した。 FIG. 5 is an enlarged perspective view of a part of the analysis model when the antenna device 1 having the configuration shown in FIGS. L41, L42, and L43 are assumed to be horizontally long, vertically long, and high, respectively, in the medium 41 of the chip component 40, and run in parallel to a part of the conductor portion of the feed element 37 (the conductor portion 32 of the radiating element 31). The length L34 (see FIG. 1) of the portion) was set to the same length as the horizontal length L41.
　図６は、図１，２で示した形態のアンテナ装置１において、媒質４１の比誘電率εｒ１と媒質４１の比透磁率μｒ１との積Ｐ１を、「１０」に設定した場合（本発明の実施例）と「１」に設定した場合（本発明の比較例）のＳ１１特性図である。積Ｐ１が「１０」の場合とは、積Ｐ１が、基板８０の比誘電率εｒと基板８０の比透磁率μｒとの積Ｐ２よりも大きい場合を示し、積Ｐ１が「１」の場合とは、積Ｐ１が、基板８０の比誘電率εｒと基板８０の比透磁率μｒとの積Ｐ２よりも小さい場合を示す。 6 shows a case where the product P1 of the relative permittivity ε r1 of the medium 41 and the relative permeability μ r1 of the medium 41 is set to “10” in the antenna device 1 having the configuration shown in FIGS. (Example of the invention) and S11 characteristic diagram when set to “1” (comparative example of the present invention). The case where the product P1 is “10” indicates that the product P1 is larger than the product P2 of the relative permittivity ε r of the substrate 80 and the relative permeability μ r of the substrate 80, and the product P1 is “1”. The case indicates a case where the product P1 is smaller than the product P2 of the relative permittivity ε r of the substrate 80 and the relative permeability μ r of the substrate 80.
　積Ｐ１が「１」の場合、図６に示されるように、放射素子３１の基本モードの共振周波数を２．６ＧＨｚ付近に設定し、且つ、給電素子３７の基本モードの共振周波数を４．７ＧＨｚ付近に設定するには、図５で示した各寸法は、単位をｍｍとすると、
　Ｌ４１：１４
　Ｌ４２：５
　Ｌ４３：１
にする必要があった。 When the product P1 is “1”, as shown in FIG. 6, the resonance frequency of the fundamental mode of the radiating element 31 is set near 2.6 GHz, and the resonance frequency of the fundamental mode of the feeding element 37 is 4.7 GHz. To set near, each dimension shown in FIG.
L41: 14
L42: 5
L43: 1
It was necessary to be.
　これに対し、積Ｐ１が「１０」の場合、図６に示されるように、放射素子３１の基本モードの共振周波数を２．６ＧＨｚ付近に設定し、且つ、給電素子３７の基本モードの共振周波数を４．７ＧＨｚ付近に設定するには、図５で示した各寸法は、単位をｍｍとすると、
　Ｌ４１：７
　Ｌ４２：５
　Ｌ４３：１
にする必要があった。 On the other hand, when the product P1 is “10”, as shown in FIG. 6, the resonance frequency of the fundamental mode of the radiating element 31 is set near 2.6 GHz, and the resonance frequency of the fundamental mode of the feed element 37 is set. 5 is set to around 4.7 GHz, each dimension shown in FIG.
L41: 7
L42: 5
L43: 1
It was necessary to be.
　すなわち、積Ｐ１を「１０」にすることによって、Ｌ４１の長さを半分にできるため、給電素子３７の小型化が可能である。 That is, by setting the product P1 to “10”, the length of L41 can be halved, so that the power feeding element 37 can be reduced in size.
　図３で示した形態のアンテナ装置２をシミュレーション解析したときにおいて、Ｓ１１特性及び相関係数特性について説明する。図７は、左右対称に形成されたアンテナ装置２の解析モデルの平面図であり、図８は、図７の一部拡大図であり、図９は、アンテナ装置３の各構成の位置関係の一例を模式的に示す図である。 The S11 characteristic and the correlation coefficient characteristic when the antenna apparatus 2 having the form shown in FIG. 7 is a plan view of an analysis model of the antenna device 2 formed symmetrically, FIG. 8 is a partially enlarged view of FIG. 7, and FIG. 9 shows the positional relationship of each component of the antenna device 3. It is a figure which shows an example typically.
　特性測定時の図７，８，９で示した各寸法は、単位をｍｍとすると、
　Ｌ５１：６０
　Ｌ５２：５０
　Ｌ５３：１０
　Ｌ５４：５
　Ｌ５５：２４
　Ｌ５６：４５
　Ｌ５７：２．５
　Ｌ５８：８．５
　Ｌ５９：５
　Ｌ６０：２．５
　Ｌ６１：２
　Ｗ３４：０．５
　Ｗ３５：１
　Ｈ１１：１
　Ｈ１２：１
　Ｈ１３：０．５
　Ｈ１４：０．５
とした。 Each dimension shown in FIGS. 7, 8 and 9 at the time of characteristic measurement is expressed in units of mm.
L51: 60
L52: 50
L53: 10
L54: 5
L55: 24
L56: 45
L57: 2.5
L58: 8.5
L59: 5
L60: 2.5
L61: 2
W34: 0.5
W35: 1
H11: 1
H12: 1
H13: 0.5
H14: 0.5
It was.
　また、グランドプレーン７０、給電素子３７Ａ，３７Ｂ及び放射素子３１Ａ，３１Ｂにおいて、Ｚ軸方向の厚さ（高さ）は０．０１８ｍｍとした。また、基板８０は、比誘電率εｒ＝３．３、ｔａｎδ＝０．００３に設定した。また、給電素子３７Ａと放射素子３１Ａとの最短距離を１ｍｍに設定し、給電素子３７Ａと放射素子３１Ａとを電磁界結合させた。給電素子３７Ｂと放射素子３１Ｂとの関係も同じである。また、媒質４１の比誘電率εｒ１と媒質４１の比透磁率μｒ１との積Ｐ１は、１０であり、基板８０の比誘電率εｒと基板８０の比透磁率μｒとの積Ｐ２よりも大きな値である。 Further, in the ground plane 70, the power feeding elements 37A and 37B, and the radiation elements 31A and 31B, the thickness (height) in the Z-axis direction was set to 0.018 mm. The substrate 80 was set to have a relative dielectric constant ε r = 3.3 and tan δ = 0.003. Further, the shortest distance between the feeding element 37A and the radiating element 31A was set to 1 mm, and the feeding element 37A and the radiating element 31A were electromagnetically coupled. The relationship between the feed element 37B and the radiation element 31B is the same. The product P1 of the relative permittivity ε r1 of the medium 41 and the relative permeability μ r1 of the medium 41 is 10, and the product P2 of the relative permittivity ε r of the substrate 80 and the relative permeability μ r of the substrate 80 Is a larger value.
　図１０は、アンテナ装置２のＳ１１，Ｓ２１特性である。図１１は、アンテナ装置２の相関係数の特性図である。図１０、図１１に示されるように、相関係数は、共振周波数２．５ＧＨｚ付近で０付近まで低下している。したがって、複数の給電素子がチップ部品内にあっても、アンテナ装置２はＭＩＭＯアンテナとして機能する。 FIG. 10 shows the S11 and S21 characteristics of the antenna device 2. FIG. 11 is a characteristic diagram of the correlation coefficient of the antenna device 2. As shown in FIGS. 10 and 11, the correlation coefficient decreases to near zero near the resonance frequency of 2.5 GHz. Therefore, the antenna device 2 functions as a MIMO antenna even if a plurality of feeding elements are in the chip part.
　図４で示した形態のアンテナ装置３をシミュレーション解析したときにおいて、Ｓ１１特性について説明する。図１２は、アンテナ装置３の解析モデルの平面図であり、図１３は、図１２の一部拡大図であり、図１４は、アンテナ装置３の各構成の位置関係の一例を模式的に示す図である。 S11 characteristics will be described when the antenna apparatus 3 having the configuration shown in FIG. 12 is a plan view of the analysis model of the antenna device 3, FIG. 13 is a partially enlarged view of FIG. 12, and FIG. 14 schematically shows an example of the positional relationship of each component of the antenna device 3. FIG.
　特性測定時の図１２，１３，１４で示した各寸法は、単位をｍｍとすると、
　Ｌ７１：３０（グランドプレーン７０及び基板８０の幅）
　Ｌ７２：５０
　Ｌ７３：１０
　Ｌ７４：５
　Ｌ７５：１６
　Ｌ７６：３０（放射素子３１Ｄの長さ）
　Ｌ７７：２．５
　Ｌ７８：５．５
　Ｌ８０：２．５
　Ｌ８１：２
　Ｌ８２：１
　Ｗ３６：０．５
　Ｗ３７：１
　Ｈ２１：１
　Ｈ２２：１
　Ｈ２３：０．５
　Ｈ２４：０．５
とした。 Each dimension shown in FIGS. 12, 13, and 14 at the time of characteristic measurement is expressed in units of mm.
L71: 30 (width of ground plane 70 and substrate 80)
L72: 50
L73: 10
L74: 5
L75: 16
L76: 30 (length of radiation element 31D)
L77: 2.5
L78: 5.5
L80: 2.5
L81: 2
L82: 1
W36: 0.5
W37: 1
H21: 1
H22: 1
H23: 0.5
H24: 0.5
It was.
　また、グランドプレーン７０、給電素子３７及び放射素子３１Ｃ，３１Ｄにおいて、Ｚ軸方向の厚さ（高さ）は０．０１８ｍｍとした。また、基板８０は、比誘電率εｒ＝３．３、ｔａｎδ＝０．００３に設定した。また、給電素子３７と放射素子３１Ｃとの最短距離を０．５ｍｍに設定し、給電素子３７と放射素子３１Ｃとを電磁界結合させた。給電素子３７と放射素子３１Ｄとの最短距離を１．０ｍｍに設定し、給電素子３７と放射素子３１Ｄとを電磁界結合させた。また、媒質４１の比誘電率εｒ１と媒質４１の比透磁率μｒ１との積Ｐ１は、１０であり、基板８０の比誘電率εｒと基板８０の比透磁率μｒとの積Ｐ２よりも大きな値である。 Further, in the ground plane 70, the power feeding element 37, and the radiation elements 31C and 31D, the thickness (height) in the Z-axis direction was set to 0.018 mm. The substrate 80 was set to have a relative dielectric constant ε r = 3.3 and tan δ = 0.003. The shortest distance between the feeding element 37 and the radiating element 31C was set to 0.5 mm, and the feeding element 37 and the radiating element 31C were electromagnetically coupled. The shortest distance between the feeding element 37 and the radiating element 31D was set to 1.0 mm, and the feeding element 37 and the radiating element 31D were electromagnetically coupled. The product P1 of the relative permittivity ε r1 of the medium 41 and the relative permeability μ r1 of the medium 41 is 10, and the product P2 of the relative permittivity ε r of the substrate 80 and the relative permeability μ r of the substrate 80 Is a larger value.
　図１５は、放射素子３１Ｃが無い場合のアンテナ装置２のＳ１１特性を示し、給電素子３７が放射素子３１Ｄのみに給電する場合を示す。図１５に示されるように、アンテナ装置３は、放射素子３１Ｄの基本モードの共振周波数と２次モードの共振周波数で励振し、マルチバンドアンテナとして機能する。このように、チップ部品内の給電素子３７は、チップ部品から離れた放射素子３１Ｄに給電できる。 FIG. 15 shows the S11 characteristic of the antenna device 2 when there is no radiating element 31C, and shows a case where the feeding element 37 feeds only the radiating element 31D. As shown in FIG. 15, the antenna device 3 is excited at the resonance frequency of the fundamental mode and the resonance frequency of the secondary mode of the radiating element 31D, and functions as a multiband antenna. In this way, the power feeding element 37 in the chip component can feed power to the radiating element 31D that is separated from the chip component.
　図１６は、放射素子３１Ｃがある場合のアンテナ装置２のＳ１１特性を示し、給電素子３７が放射素子３１Ｃと放射素子３１Ｄの両方に給電する場合を示す。
図１６に示されるように、アンテナ装置３は、放射素子３１Ｄの基本モードの共振周波数と２次モードの共振周波数だけでなく、放射素子３１Ｃの基本モードの共振周波数でも励振するので、マルチバンドアンテナとして機能する。このように、チップ部品内には、給電素子だけでなく、放射素子があってもよい。 FIG. 16 shows the S11 characteristic of the antenna device 2 when the radiating element 31C is present, and shows a case where the feeding element 37 feeds both the radiating element 31C and the radiating element 31D.
As shown in FIG. 16, the antenna device 3 excites not only the resonance frequency of the fundamental mode and the resonance frequency of the secondary mode of the radiating element 31D but also the resonance frequency of the fundamental mode of the radiating element 31C. Function as. As described above, the chip component may include a radiating element as well as a feeding element.
　以上、アンテナ装置及びそれを備える無線装置を実施形態例により説明したが、本発明は上記実施形態例に限定されるものではない。他の実施形態例の一部又は全部との組み合わせや置換などの種々の変形及び改良が、本発明の範囲内で可能である。 Although the antenna device and the wireless device including the antenna device have been described above by way of the embodiment, the present invention is not limited to the above embodiment. Various modifications and improvements, such as combinations and substitutions with part or all of other example embodiments, are possible within the scope of the present invention.
　例えば、放射素子は、図示の形態に限られない。例えば、図１の放射素子３１は、直接又は接続導体を介して間接的に接続された導体部分を有するものでもよいし、放射素子３１に高周波的（例えば、容量的）に結合された導体部分を有するものでもよい。 For example, the radiating element is not limited to the illustrated form. For example, the radiating element 31 of FIG. 1 may have a conductor portion that is directly or indirectly connected via a connecting conductor, or a conductor portion that is coupled to the radiating element 31 in a high-frequency manner (for example, capacitively). It may have.
　また、放射素子は、直線的に延びる線状の導体部分を含むものに限らず、曲がった導体部分を含むものでもよい。例えば、Ｌ字状の導体部分を含むものでもよいし、メアンダ形状の導体部分を含むものでもよいし、途中で分岐した導体部分を含むものでもよい。 Further, the radiating element is not limited to a linear conductor portion extending linearly, and may include a bent conductor portion. For example, an L-shaped conductor portion may be included, a meander-shaped conductor portion may be included, or a conductor portion branched in the middle may be included.
　本国際出願は、２０１３年６月２１日に出願した日本国特許出願第２０１３－１３１１５７号に基づく優先権を主張するものであり、日本国特許出願第２０１３－１３１１５７号の全内容を本国際出願に援用する。 This international application claims priority based on Japanese Patent Application No. 2013-131157 filed on June 21, 2013. The entire contents of Japanese Patent Application No. 2013-131157 are hereby incorporated by reference. Incorporated into.
１，２、３　アンテナ装置
１０　第１のダイポールアンテナ素子
２０　第２のダイポールアンテナ素子
３１，３１Ａ，３１Ｂ，３１Ｃ，３１Ｄ　放射素子
３２　導体部分
３６　給電部
３７　給電素子
３８，３８Ａ，３８Ｂ　給電点
４０，４６，４７　チップ部品
４１　媒質
４２　表面
４３，４３Ａ，４３Ｂ　配線
４４，４４Ａ，４４Ｂ　電極
４５　マッチング回路
７０　グランドプレーン
７１，７２　外縁部
７３　角部
８０，１１０　基板
８１　ランド
８２　ストリップ導体
９０　中央部
１００　無線通信装置 1, 2, 3 Antenna device 10 First dipole antenna element 20 Second dipole antenna elements 31, 31A, 31B, 31C, 31D Radiating element 32 Conductor portion 36 Feeding portion 37 Feeding elements 38, 38A, 38B Feeding point 40, 46, 47 Chip component 41 Medium 42 Surface 43, 43A, 43B Wiring 44, 44A, 44B Electrode 45 Matching circuit 70 Ground plane 71, 72 Outer edge 73 Corner 80, 110 Substrate 81 Land 82 Strip conductor 90 Central part 100 Wireless communication apparatus

Claims (14)

  1. 　給電点を備えた基板と、
    　前記給電点に接続される給電素子と、
    　前記給電素子によって非接触で給電される放射素子と、
    　前記給電素子に接する媒質とを備え、
    　前記媒質の比誘電率と前記媒質の比透磁率との積は、前記基板の比誘電率と前記基板の比透磁率との積よりも大きい、アンテナ装置。     A substrate with a feed point;
    A feed element connected to the feed point;
    A radiating element fed in a non-contact manner by the feeding element;
    A medium in contact with the feeding element,
    The antenna device, wherein a product of a relative permittivity of the medium and a relative permeability of the medium is larger than a product of a relative permittivity of the substrate and a relative permeability of the substrate.
  2. 　前記給電素子と前記放射素子が電磁界結合する、請求項１に記載のアンテナ装置。 The antenna device according to claim 1, wherein the feeding element and the radiating element are electromagnetically coupled.
  3. 　前記給電素子と前記媒質とを含んで構成されたチップ部品が、前記基板に実装された、請求項１または２に記載のアンテナ装置。 The antenna device according to claim 1 or 2, wherein a chip component including the power feeding element and the medium is mounted on the substrate.
  4. 　前記給電素子は、前記チップ部品の内部に配置された、請求項３に記載のアンテナ装置。 The antenna device according to claim 3, wherein the feeding element is disposed inside the chip component.
  5. 　前記チップ部品は、前記放射素子又は前記給電素子のマッチングを行うマッチング回路を有する、請求項３又は４に記載のアンテナ装置。 The antenna device according to claim 3 or 4, wherein the chip component has a matching circuit for matching the radiation element or the feeding element.
  6. 　前記媒質の比誘電率と前記媒質の比透磁率との積は、６以上である、請求項１から５のいずれか一項に記載のアンテナ装置。 The antenna device according to any one of claims 1 to 5, wherein a product of a relative permittivity of the medium and a relative permeability of the medium is 6 or more.
  7. 　前記給電素子の共振の基本モードを与える電気長をＬｅ３７、前記放射素子の共振の基本モードを与える電気長をＬｅ３１、前記放射素子の基本モードの共振周波数における前記給電素子または前記放射素子上での波長をλとして、Ｌｅ３７が、（３／８）・λ以下であり、かつ、Ｌｅ３１が、前記放射素子の共振の基本モードがダイポールモードである場合、（３／８）・λ以上（５／８）・λ以下であり、前記放射素子の共振の基本モードがループモードである場合、（７／８）・λ以上（９／８）・λ以下である請求項１から６のいずれか一項に記載のアンテナ装置。 The electrical length giving the fundamental mode of resonance of the feeding element is Le37, the electrical length giving the fundamental mode of resonance of the radiating element is Le31, and the feeding element or the radiating element at the resonance frequency of the fundamental mode of the radiating element is When the wavelength is λ and Le37 is (3/8) · λ or less, and Le31 is the dipole mode of the fundamental mode of resonance of the radiating element, (3/8) · λ or more (5 / 8) · λ or less, and when the fundamental mode of resonance of the radiating element is a loop mode, it is (7/8) · λ or more and (9/8) · λ or less. The antenna device according to item.
  8. 　前記放射素子の基本モードの共振周波数における真空中の電波の波長をλ０とする場合、
    　前記給電素子と前記放射素子との最短距離が、０．２×λ０以下である、請求項１から７のいずれか一項に記載のアンテナ装置。     When the wavelength of the radio wave in vacuum at the resonance frequency of the fundamental mode of the radiating element is λ 0 ,
    The antenna device according to claim 1, wherein a shortest distance between the feeding element and the radiating element is 0.2 × λ 0 or less.
  9. 　前記給電素子が前記放射素子に給電する給電部は、前記放射素子の基本モードの共振周波数における最も低いインピーダンスになる部分以外に位置させる、請求項１から８のいずれか一項に記載のアンテナ装置。 The antenna device according to any one of claims 1 to 8, wherein a power feeding unit that feeds power to the radiating element by the power feeding element is located at a portion other than a portion having the lowest impedance at a resonance frequency of a fundamental mode of the radiating element. .
  10. 　前記給電素子が前記放射素子に給電する給電部は、前記放射素子の基本モードの共振周波数における最も低いインピーダンスになる部分から前記放射素子の全長の１／８以上の距離を離した部位に位置する、請求項１から９のいずれか一項に記載のアンテナ装置。 The power feeding unit that feeds power to the radiating element from the power feeding element is located at a position that is separated from the portion having the lowest impedance at the resonance frequency of the fundamental mode of the radiating element by a distance of 1/8 or more of the entire length of the radiating element. The antenna device according to any one of claims 1 to 9.
  11. 　前記給電素子と前記放射素子とが最短距離で並走する距離は、前記放射素子の長さの３／８以下である、請求項１から１０のいずれか一項に記載のアンテナ装置。 The antenna device according to any one of claims 1 to 10, wherein a distance in which the feeding element and the radiating element run in parallel at a shortest distance is 3/8 or less of a length of the radiating element.
  12. 　グランドプレーンを備え、
    　前記放射素子は、前記グランドプレーンの外縁部に沿った導体部分を有する、請求項１から１１のいずれか一項に記載のアンテナ装置。     With a ground plane,
    The antenna device according to claim 1, wherein the radiating element has a conductor portion along an outer edge portion of the ground plane.
  13. 　前記基板は、前記給電点に接続される伝送線路を有する、請求項１から１２のいずれか一項に記載のアンテナ装置。 The antenna device according to any one of claims 1 to 12, wherein the substrate has a transmission line connected to the feeding point.
  14. 　請求項１から１３のいずれか一項に記載のアンテナ装置を備える無線装置。 A wireless device comprising the antenna device according to any one of claims 1 to 13.
PCT/JP2014/066290 2013-06-21 2014-06-19 Antenna device and wireless device provided therewith WO2014203967A1 (en)

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CN111029713A (en) * 2019-11-29 2020-04-17 Oppo广东移动通信有限公司 Electronic equipment
US11831090B2 (en) * 2020-06-16 2023-11-28 Apple Inc. Electronic devices with display-overlapping antennas

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JPH10173425A (en) * 1996-12-06 1998-06-26 Murata Mfg Co Ltd Surface mount antenna and antenna device and communication equipment
JP2001244715A (en) * 2000-02-28 2001-09-07 Sony Corp Antenna system
JP2009027233A (en) * 2007-07-17 2009-02-05 Murata Mfg Co Ltd Wireless ic device, and electronic equipment

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10173425A (en) * 1996-12-06 1998-06-26 Murata Mfg Co Ltd Surface mount antenna and antenna device and communication equipment
JP2001244715A (en) * 2000-02-28 2001-09-07 Sony Corp Antenna system
JP2009027233A (en) * 2007-07-17 2009-02-05 Murata Mfg Co Ltd Wireless ic device, and electronic equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111029713A (en) * 2019-11-29 2020-04-17 Oppo广东移动通信有限公司 Electronic equipment
US11831090B2 (en) * 2020-06-16 2023-11-28 Apple Inc. Electronic devices with display-overlapping antennas

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