WO2014194336A3 - Analog transcap device - Google Patents

Analog transcap device Download PDF

Info

Publication number
WO2014194336A3
WO2014194336A3 PCT/US2014/042663 US2014042663W WO2014194336A3 WO 2014194336 A3 WO2014194336 A3 WO 2014194336A3 US 2014042663 W US2014042663 W US 2014042663W WO 2014194336 A3 WO2014194336 A3 WO 2014194336A3
Authority
WO
WIPO (PCT)
Prior art keywords
capacitance
control
control voltage
variation
capacitance plate
Prior art date
Application number
PCT/US2014/042663
Other languages
French (fr)
Other versions
WO2014194336A9 (en
WO2014194336A2 (en
Inventor
Fabio Alessio Marino
Paolo Menegoli
Original Assignee
Fabio Alessio Marino
Paolo Menegoli
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/888,368 external-priority patent/US8803288B1/en
Application filed by Fabio Alessio Marino, Paolo Menegoli filed Critical Fabio Alessio Marino
Publication of WO2014194336A2 publication Critical patent/WO2014194336A2/en
Publication of WO2014194336A3 publication Critical patent/WO2014194336A3/en
Publication of WO2014194336A9 publication Critical patent/WO2014194336A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0808—Varactor diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0811—MIS diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66174—Capacitors with PN or Schottky junction, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H01L29/66189—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors with PN junction, e.g. hybrid capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Use: for manufacturing semiconductor structures of variable capacitance devices. The present invention describes a MOS based semiconductor variable capacitor structure, named transcap, which comprising: a first equivalent capacitance plate; a second equivalent capacitance plate; at least one control region; capacitance value between said first and second capacitance plates of said semiconductor variable capacitor is varied by varying a control voltage; wherein said control region forms a rectifying junction with said first capacitance plate, and wherein the variation of said control voltage causes a variation of the voltage drop across said rectifying junction. Technical result: allows for the decoupling of the AC signal from the DC control voltage preventing distortions and increasing the performance of the device, such as control reliability.
PCT/US2014/042663 2013-05-07 2014-06-17 Analog transcap device WO2014194336A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/888,368 2013-05-07
US13/888,368 US8803288B1 (en) 2011-05-05 2013-05-07 Analog transcap device

Publications (3)

Publication Number Publication Date
WO2014194336A2 WO2014194336A2 (en) 2014-12-04
WO2014194336A3 true WO2014194336A3 (en) 2015-02-05
WO2014194336A9 WO2014194336A9 (en) 2015-05-14

Family

ID=51989555

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/042663 WO2014194336A2 (en) 2013-05-07 2014-06-17 Analog transcap device

Country Status (1)

Country Link
WO (1) WO2014194336A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10319866B2 (en) * 2017-02-13 2019-06-11 Qualcomm Incorporated Layout techniques for transcap area optimization
US9985145B1 (en) 2017-04-21 2018-05-29 Qualcomm Incorporated Variable capacitor structures with reduced channel resistance
US20190305143A1 (en) * 2018-03-27 2019-10-03 Qualcomm Incorporated Apparatuses and methods for a variable capacitor
US10424641B1 (en) * 2018-04-20 2019-09-24 Qualcomm Incorporated Lateral devices in silicon-on-insulator (SOI) technology

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829743A (en) * 1969-09-18 1974-08-13 Matsushita Electric Ind Co Ltd Variable capacitance device
RU2117360C1 (en) * 1995-12-15 1998-08-10 Валерий Моисеевич Иоффе Semiconductor device
US20050127411A1 (en) * 2003-03-03 2005-06-16 Fujitsu Limited Mos type variable capacitance device
US20120281336A1 (en) * 2011-05-05 2012-11-08 Fabio Alessio Marino Semiconductor variable capacitor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829743A (en) * 1969-09-18 1974-08-13 Matsushita Electric Ind Co Ltd Variable capacitance device
RU2117360C1 (en) * 1995-12-15 1998-08-10 Валерий Моисеевич Иоффе Semiconductor device
US20050127411A1 (en) * 2003-03-03 2005-06-16 Fujitsu Limited Mos type variable capacitance device
US20120281336A1 (en) * 2011-05-05 2012-11-08 Fabio Alessio Marino Semiconductor variable capacitor

Also Published As

Publication number Publication date
WO2014194336A9 (en) 2015-05-14
WO2014194336A2 (en) 2014-12-04

Similar Documents

Publication Publication Date Title
USD939496S1 (en) Electronic device
WO2015123250A3 (en) Stacked metal oxide semiconductor (mos) and metal oxide metal (mom) capacitor architecture
BR112016026649A2 (en) WIRELESS POWER TRANSFER SYSTEM
WO2014194336A3 (en) Analog transcap device
JP2012256314A5 (en)
WO2013006699A3 (en) Monolithically integrated active snubber
BR112018004935A2 (en) passive glass device and method (pog)
JP2015195365A5 (en)
WO2014200753A3 (en) Recessed field plate transistor structures
JP2014142923A5 (en)
WO2014120687A3 (en) Performing application search based on entities
JP2014006516A5 (en) Semiconductor device
TW201613094A (en) Structure of fin feature and method of making same
TW201613063A (en) Semiconductor device
JP2012257447A5 (en)
GB201201735D0 (en) Under bump passives in wafer level packaging
EP3298628A4 (en) Semiconductor devices with raised doped crystalline structures
JP2015038797A5 (en) Semiconductor device
JP2017146968A5 (en) Semiconductor devices, electronic equipment, semiconductor wafers
JP2014241588A5 (en)
EP3396835A4 (en) Dc-dc converter and load-driving semiconductor integrated circuit
EP3032587A4 (en) Semiconductor element, method for manufacturing same, and semiconductor integrated circuit
IL294240A (en) Transistor having low capacitance field plate structure
WO2015109088A3 (en) Esd clamp with a layout-alterable trigger voltage
EP3049881A4 (en) Dynamic switching frequency control of an on-chip or integrated voltage regulator

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14804308

Country of ref document: EP

Kind code of ref document: A2