WO2014193105A1 - Organic light emitting diode device having dummy electrode - Google Patents

Abstract

The purpose of the present invention is to compensate for non-uniform transmissivity of an organic light emitting diode device and comprises a dummy electrode (22), an insulating layer (23), a first electrode (24), an organic emission layer (25) and a second electrode (26), which are sequentially formed on a substrate (21), wherein the area of the surface of the first electrode is smaller than the area of the surface of the organic emission layer, and the dummy electrode is formed on the entire surface of the substrate.

Description

Organic light emitting device having a dummy electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device (hereinafter sometimes referred to simply as "OLED"), and more particularly to an organic electroluminescent device having a dummy electrode for improving visibility.

The OLED has a structure in which an organic light emitting layer containing an organic compound is inserted between a pair of electrodes formed of a cathode and a cathode formed on a transparent substrate such as glass, and holes are formed in the organic light emitting layer from the pair of electrodes. And an electron to inject and recombine to generate excitons, and to emit light when the activity of the excitons is lost.

OLEDs are classified into top mission type, bottom mission type and double mission type (transparent mission type, also called transparent OLED) according to the emission direction of light. The electrode is made of a transparent electrode made of, for example, indium tin oxide (ITO) or the like.

1 is a perspective view illustrating a schematic structure of a conventional bottom emission type OLED display device, and FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1.

As shown in FIGS. 1 and 2, the conventional OLED 10 includes a first electrode 12 made of a transparent electrode such as ITO formed on a transparent substrate 11 such as a glass substrate, and a first electrode 12. An organic light emitting layer 13 formed on the organic light emitting layer 13 and a second electrode 14 stacked on the organic light emitting layer 13.

1 and 2 show the structure of a display device formed by four light emitting elements for convenience of explanation, and the individual OLEDs 10 are separated by an element isolation layer 15.

As shown in FIGS. 1 and 2, in the conventional OLED, the width of the ITO electrode, which is the first electrode 12, is smaller than the width of the organic light emitting layer 13. Therefore, since the area of the surface of the first electrode 12 corresponding to the surface of the organic light emitting layer 13 that is the light emitting surface is small, a part of the light emitted from the organic light emitting layer 13 and emitted to the substrate 11 side is removed. Since the first electrode 12 penetrates and is emitted to the outside of the substrate 11, and the remaining part is emitted directly to the outside of the substrate 11 without penetrating the first electrode 12, there is a nonuniformity in the transmittance of light drawn out. Occurs.

3 is a graph showing the results of simulating the optical characteristics of the conventional OLED, wherein the X axis represents the wavelength, the Y axis represents the transmittance and the reflectance, and the black solid line represents the substrate 11 without the ITO electrode (first electrode). When the 1st electrode 12 which consists of ITO is formed in the OLED of the structure of FIGS. 1 and 2, ie, the board | substrate 11 which consists of glass, the red solid line shows the light transmittance characteristic of light, The 1st electrode 12 and the board | substrate 11 ) Shows the transmittance characteristics of the light that is transmitted to the outside and drawn to the outside, the black dotted line shows the reflectance characteristics of the light in the substrate 11 when there is only the substrate 11 without the ITO electrode (first electrode), the red dotted line shows FIG. And reflectance characteristics of light in the substrate 11 in the case where the first electrode 12 made of ITO is formed on the OLED having the structure of 2, that is, the glass 11.

As shown in FIG. 3, in the absence of the first electrode 12 made of the ITO electrode, the reflectance of the light in the substrate 11 is approximately 10% uniformly in all wavelength regions, so that the light generated in the organic light emitting layer 13 About 90% of the light penetrates the substrate 11 and is released to the outside. However, when the first electrode 12, which is an ITO electrode, is formed only in a part of the region on the substrate 11 as shown in Figs. 1 and 2, the absorption of light increases in the wavelength region around 400 nm, and thus the wavelength around 400 nm. The transmittance of light transmitted through the substrate 11 in the region and emitted to the outside is significantly reduced.

Since light having a wavelength of 400 nm is blue light, the transmittance of light is decreased in the wavelength region around 400 nm. In other words, when using a conventional OLED having the structure of FIGS. This means that the light extraction efficiency of the blue region is significantly lower than other colors.

The present invention is to improve the above problem that the light extraction efficiency is lower than that of other wavelength regions in the non-uniformity of the extraction efficiency of light emitted to the outside of the OLED in the conventional OLED structure, especially in the blue region having a wavelength of 400 to 500mm. It is an object of the present invention to improve the light extraction efficiency in the blue region having a wavelength of 400 to 500 mm by improving the arrangement and structure of the ITO electrode of the conventional OLED to improve the visibility of the OLED.

An organic electroluminescent device of the present invention for solving the above problems includes a substrate, a dummy electrode formed on the substrate, an insulating layer laminated on the dummy electrode, a first electrode formed on the insulating layer, An organic light emitting layer laminated on the first electrode, and a second electrode laminated on the organic light emitting layer, wherein an area of the surface of the first electrode is smaller than an area of the surface of the organic light emitting layer, and the dummy electrode Is formed on the entire surface of the substrate.

In another embodiment, an organic light emitting display device includes a substrate, a dummy electrode formed on the substrate, an insulating layer laminated on the dummy electrode, a first electrode formed on the insulating layer, and the And an organic light emitting layer laminated on the first electrode, and a second electrode stacked on the organic light emitting layer, wherein an area of the surface of the first electrode is smaller than an area of the surface of the organic light emitting layer, It is formed only in a region other than the region corresponding to the first electrode on the substrate.

According to the organic light emitting device of the present invention, since the dummy electrode is formed in at least a region corresponding to the entire region of the organic light emitting layer, the light drawn out to the outside of the organic light emitting device is extracted from the region where the first electrode is formed and the non-formed region. The nonuniformity of efficiency can be eliminated, and the nonuniformity of light extraction efficiency can be eliminated especially in a blue region. Therefore, the visibility of the organic light emitting device can be improved.

1 is a perspective view showing a schematic structure of a conventional bottom emission type OLED display device;

2 is a cross-sectional view taken along the line A-A of FIG. 1;

3 is a graph showing a result of simulating optical characteristics of a conventional OLED;

4 is a perspective view showing a schematic structure of a bottom emission type OLED display device of Embodiment 1 of the present invention;

5 is a cross-sectional view taken along the line A-A of FIG. 4;

6 is a graph simulating the optical characteristics of the OLED of Embodiment 1,

7 is a cross-sectional view of a bottom emission type OLED display device of Embodiment 2 of the present invention;

8 is a graph simulating the optical characteristics of the OLED of Embodiment 2,

9 is a cross-sectional view of a bottom emission type OLED display device of Embodiment 3 of the present invention;

10 is a graph simulating the optical characteristics of the OLED of Embodiment 3. FIG.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described in detail, referring drawings.

<Embodiment 1>

4 is a perspective view illustrating a schematic structure of a bottom emission type OLED display device according to Embodiment 1 of the present invention, and FIG. 5 is a cross-sectional view taken along line A-A of FIG. 4.

4 and 5, the bottom emission type OLED of the present embodiment is basically the same as the conventional bottom emission type OLED, and differs in that it has more dummy electrodes than the conventional OLED.

As shown in Figs. 4 and 5, the OLED 20 of the first embodiment has a dummy electrode 22 laminated on the entire surface of the substrate 21 on a substrate 21 made of a material such as glass having insulation and light transmittance. And an insulating layer 23 laminated on the entire surface of the upper part of the dummy electrode 22, a first electrode 24 formed of a transparent material such as ITO, laminated on the insulating layer 23, and a first electrode. And an organic light emitting layer 25 formed on the organic light emitting layer 25 and a second electrode 26 formed on the organic light emitting layer 25.

The dummy electrode 22 formed over the entire surface on the substrate 21 has a smaller area of the surface of the first electrode 24 corresponding to that of the surface of the surface of the light emitting surface of the organic light emitting layer 25, so that the first electrode This is a layer for compensating for the problem that the transmittance of light emitted to the outside of the OLED 20 is lowered due to a difference in absorption, annihilation, and scattering of light in the portion where the 24 is formed and the portion where the first electrode 24 is not formed. .

The dummy electrode 22 may be made of the same material as that of the first electrode 24, for example, using a material having low light absorption and extinction and high transmittance, such as indium tin oxide (ITO). That is, when the first electrode 24 is ITO, the dummy electrode 22 may also use ITO, and when the first electrode 24 is indium zinc oxide (IZO), the dummy electrode 22 may also use IZO. . However, the present invention is not limited thereto, and the materials of the dummy electrode 22 and the first electrode 24 may be different from each other as long as the material has low absorption and disappearance and high transmittance.

The dummy electrode 22 is formed on the substrate 21 by, for example, a physical vapor deposition (PVD) method such as vacuum deposition, sputtering, or other known methods. Since it is not used as an actual electrode for supplying operating power to the OLED 20, it is not necessary to connect with an external driving circuit.

In the present embodiment, the thickness of the dummy electrode 22 is in the range of 150 to 250 nm, and when the thickness of the dummy electrode 22 is 150 nm or less, it is too thin to be easily applied in an actual process. The absorption of the light at the dummy electrode 22 increases, which is not appropriate.

Next, the insulating layer 23 functions to isolate the dummy electrode 22 and the first electrode 24, and compensates for the difference in optical characteristics between the dummy electrode 22 and the first electrode 24. The layer is formed by a known vapor deposition method such as vacuum deposition using a material such as SiO ₂ , which is a material having low light absorption and annihilation and high transmittance.

In this embodiment, the thickness of the insulating layer 23 was 180 nm.

Next, the first electrode 24 functions as an electrode of either the positive electrode or the negative electrode, and is formed using a material usable as a transparent electrode similarly to the dummy electrode 22.

Here, the first electrode 24 is not formed on the entire surface of the substrate 21 like the dummy electrode 22, but is formed in an area smaller than the area of the organic light emitting layer 25 like the conventional OLED 10. do. Therefore, the first electrode 24 is formed on the substrate 21 by, for example, a PVD method such as a vacuum deposition method, a sputtering method, or other known method, and then, a predetermined size and It can be formed by patterning in a shape. A part of the first electrode 24 as an electrode for supplying electric power for operation of the OLED 20 is drawn out to the end of the substrate 21 and connected to a driving circuit (not shown).

In this embodiment, the thickness of the 1st electrode 24 was 150-250 nm.

An organic light emitting layer 25 is formed on the first electrode 24, and the organic light emitting layer 25 has a hole injection layer (HIL), a hole transport layer (HTL), and an organic layer on the first electrode 24. The light emitting layer (EML), the electron transport layer (ETL) is formed in a stack in order. However, the organic light emitting layer 25 is not limited to the lamination structure, and the organic light emitting layer alone, or in the order of the hole injection layer / organic light emitting layer, or in the order of the organic light emitting layer / electron injection layer, or the hole injection layer / organic light emitting layer A lamination structure may be in order of electron injection layer, or hole injection layer, hole transport layer, organic light emitting layer, electron injection layer, or hole injection layer, hole transport layer, organic light emitting layer, electron transport layer, electron injection layer. .

The organic light emitting layer 25 is formed of a known conventional material, and may be formed by a known method such as spin coating, thermal vapor deposition, spin casting, sputtering, electron beam deposition, or chemical vapor deposition (CVD).

The second electrode 26 is formed on the organic light emitting layer 25, and the second electrode 26 functions as one of an anode and a cathode, for example, the first electrode 24 is an anode. In this case, the second electrode 26 becomes a cathode, and conversely, when the first electrode 24 becomes a cathode, the second electrode 26 becomes an anode.

Here, the second electrode 26 is formed using, for example, aluminum (Al) using a conventional thin film forming method such as vacuum deposition or sputtering, and a part of the second electrode 26 as an electrode is formed of a substrate 21. Is drawn out to the end of &lt; RTI ID = 0.0 &gt;), &lt; / RTI &gt;

However, the material of the second electrode 26 is not limited to aluminum, and according to the light extraction method of the OLED 20, for example, in the double-sided light emitting OLED, the second electrode 26 also has the first electrode 24. Similarly, it is formed of a transparent electrode material.

Although not shown in Figs. 4 and 5, the upper part of the first electrode 24 and the upper part of the insulating layer 23 on which the first electrode 24 is not formed are absorbed, for example, light such as polyimide over the entire surface. And a protective layer made of a material having low extinction and high transmittance, and the thickness of the protective layer can be formed in the range of approximately 1000 to 1500 nm.

The outer circumferential portion of the substrate 21 is sealed by a sealing member.

FIG. 6 is a graph simulating optical characteristics of the OLED 20 of Embodiment 1, wherein (a) is a thickness of the dummy electrode 22 and the first electrode 24 of 150 nm, and the thickness of the insulating layer 23. As a result of simulating the optical characteristics in the case of 180 nm, (b) shows the case where the thickness of the dummy electrode 22 and the first electrode 24 is 250 nm, and the thickness of the insulating layer 23 is 180 nm. The result of having simulated the optical characteristic is shown, respectively.

6 (a) and 6 (b), the horizontal axis represents the wavelength of light (nm) and the vertical axis represents the light transmittance (%), respectively. In the black solid line, only the dummy electrode 22 is formed in FIGS. The first electrode 24 represents the transmittance of light in the unformed region (region A in FIG. 5), and the solid red line represents the region in which both the dummy electrode 22 and the first electrode 24 are formed (region B in FIG. 5). The transmittance | permeability of light is shown, respectively.

As shown in (a) and (b) of FIG. 6, in the OLED 20 of the present embodiment, which further includes the dummy electrode 22 and the insulating layer 23, the conventional electrode having no dummy electrode 22 of FIG. It can be seen that the transmittance of light in the wavelength region of 400 to 500 nm, which is a blue region, is improved compared to the OLED 10.

6A and 6B, the difference in the light transmittance according to the difference in thickness is not large within the range of the thickness of the dummy electrode 22 and the first electrode 24 in the range of 150 to 250 nm. Able to know.

<Embodiment 2>

Next, Embodiment 2 which is another embodiment of this invention is demonstrated. FIG. 7 is a cross-sectional view of the bottom emission type OLED 30 of Embodiment 2 of the present invention. In FIGS. 4 and 5, a display device including four OLED elements is shown. However, FIG. Only shows.

The OLED 30 of Embodiment 2 is different from the formation position and shape of a dummy electrode with OLED 20 of Embodiment 1, and the other part is the same as that of Embodiment 1. As shown in FIG.

As shown in FIG. 7, the OLED 30 of Embodiment 2 is a region in which the first electrode 34 is not formed among the regions on the substrate 31 corresponding to the region of the organic light emitting layer 36 (the region of FIG. 7). The dummy electrode 32 made of a transparent electrode material is formed only on C), and the insulating layer 33 made of an insulating material such as SiO ₂ is formed in the entire region of the substrate including the upper part of the dummy electrode 32. The first electrode 34 made of a transparent electrode material is formed in a portion (region D of FIG. 7) corresponding to the organic light emitting layer 36 on the insulating layer 33.

The formation position and size of the first electrode 34 are the same as those in the first embodiment.

In addition, a protective layer 35 made of polyimide or the like is formed in a region other than the position where the first electrode 34 is formed in the upper region of the insulating layer 33, and the protective layer 35 and the first electrode ( The organic light emitting layer 36 and the second electrode 37 are sequentially formed on the upper portion of the 34, and the position, the size, the material, the forming method, and the like of the organic light emitting layer 36 and the second electrode 37 are the first embodiment. Is the same as

The dummy electrode 32 and the first electrode 34 are formed of a conductive material having transparency such as ITO. For example, the dummy electrode material such as ITO may be formed by a PVD method such as vacuum deposition or sputtering or other known methods. After depositing on the substrate 31, it is patterned into a predetermined shape by etching with a photoresist.

A part of the first electrode 34 of the present embodiment is drawn out to the end of the substrate 31 and connected to a driving circuit (not shown), but the dummy electrode 32 is the same as that of the dummy electrode 22 of the first embodiment. Since it is not used as an actual electrode, it is not connected to an external driving circuit.

In the present embodiment, the thickness of the dummy electrode 32 is 145 nm, the thickness of the insulating layer 33 is the portion corresponding to the first electrode 34 (region D in FIG. 7) is 155 nm, and the dummy electrode 32 The upper region (region C in FIG. 7) was 10 nm.

In addition, like the first embodiment, the protective layer 35 is not an essential configuration and may be omitted.

8 is a graph simulating the optical characteristics of the OLED 30 of Embodiment 2, (a) shows the result of simulating optical characteristics when the protective layer 35 is not included, and (b) shows a protective layer ( The results of simulation of the optical characteristics in the case of including 35) are shown.

In FIGS. 8A and 8B, the horizontal axis represents the wavelength of light (nm) and the vertical axis represents the light transmittance (%), respectively. In addition, the black solid line of FIG. 8 (a) represents the dummy electrode 32. The light transmittance of the formed region (region C of FIG. 7) and the red dotted line represent the transmittance of light of the region (region D of FIG. 7) on which the first electrode 34 is formed. In addition, the black solid line in FIG. 8B including the protective layer 35 shows the light transmittance of the region (region C in FIG. 7) in which the dummy electrode 32 is formed, and the red solid line shows the first electrode 34. The transmittance | permeability of the light of area | region (region D of FIG. 7) is shown, respectively.

As shown in (a) and (b) of FIG. 8, the wavelength region of 400 to 500 nm, which is a blue region, and especially around 450 nm, in comparison with the conventional OLED of FIG. 3 without the dummy electrode, according to this embodiment. The improvement in the transmittance at the wavelength of is shown, and the light transmittances of the regions C and D do not differ substantially.

In addition, comparing (a) and (b) of FIG. 8, it can be seen that (b) having the protective layer 35 further increases the light transmittance in comparison with (a) having no protective layer 35. .

<Embodiment 3>

Next, Embodiment 3 is described. 9 is a cross-sectional view of the bottom-emitting OLED 40 of Embodiment 3 of the present invention, and shows only the OLED single element as in FIG.

In the OLED 40 of Embodiment 3, the arrangement positions of the OLED 30 and the dummy electrode and the first electrode of Embodiment 2 are basically the same, but with the change of the arrangement position of the first electrode, the insulating layer, the dummy electrode, There is a difference in changing the thickness of one electrode and the protective layer.

As shown in FIG. 9, the OLED 40 of Embodiment 3 includes a dummy electrode 42 made of a transparent electrode material formed in a region corresponding to a region in which an organic light emitting layer 46 is formed on the substrate 41 and the dummy. An insulating layer 43 made of a material such as SiO ₂ is formed on the substrate 41 including the upper part of the electrode 42.

Unlike the insulating layer 33 of Embodiment 2, the insulating layer 43 of this embodiment is a recessed part in which the area | region in which the 1st electrode 44 mentioned later is formed was removed by etching etc., and the insulating layer ( 43) A first electrode 44 is formed in the recessed portion of the upper portion, and a protective layer 45 made of, for example, polyimide over the entire surface of the first electrode 44 and the insulating layer 43. Is formed.

In this embodiment, the thickness of the dummy electrode 42 and the first electrode 44 was 150 nm, the thickness of the insulating layer 43 was also 150 nm, and the thickness of the protective layer 45 was 1000 nm.

In contrast to FIG. 7 of Embodiment 2, in FIG. 9, the edge portion of the first electrode 44 and the edge portion of the dummy electrode 42 do not coincide with each other, but this is the dummy electrode 42 and the first electrode in the actual manufacturing process. This is a difference that occurs during the patterning process of (44) and does not have a special meaning.

The organic light emitting layer 46 and the second electrode 47 are formed on the passivation layer 45.

FIG. 10 is a graph simulating optical characteristics of the OLED 40 of Embodiment 3, (a) shows the results of simulating optical characteristics of the dummy electrode 42 formation region (region E in FIG. 9), (b) Indicates the results of simulating the optical characteristics of the region where the first electrode 44 is formed (region F in FIG. 9), and in FIGS. 10A and 10B, the horizontal axis represents wavelength of light (nm) and the vertical axis represents The transmittance | permeability (%) of light is shown, respectively.

As shown in (a) and (b) of FIG. 10, the present embodiment also shows an improvement in transmittance in the wavelength region of 400 to 500 nm, which is a blue region, compared to the conventional OLED of FIG. 3 having no dummy electrode. It is understood that the light transmittances of the regions E and F are virtually no difference.

<Supplement>

In each of the above embodiments, the material of the first electrodes 24, 34, 44 is described using ITO as an example, but the material of the first electrodes 24, 34, 44 is not limited to ITO, and absorption and disappearance of light Any material may be used as long as it is a transparent electrode material having a small and high transmittance. For example, ZnO, AlOx, or the like may be used.

In each of the above embodiments, the material of the dummy electrodes 22, 32, and 42 has been described using ITO as an example. However, the material of the dummy electrodes 22, 32, and 42 is not limited to ITO. Any material may be used as long as it is a transparent electrode material having a small and high transmittance. For example, NA ₃ AlF ₆ , MgF ₂ , SiO ₂ , Al ₂ O ₃ , Y ₂ O ₃ , HfO ₂ , ZrO ₂ , Ta ₂ O ₅ , TiO ₂ , ZnO, PI, IZO, Si ₃ N ₄ , MgO Etc. may be used.

In addition, although the material of the insulating layers 23, 33, 43 has been described using SiO ₂ as an example, the material of the insulating layers 23, 33, 43 is not limited to SiO ₂ , and light absorption and annihilation are low and transmittance is small. Any material may be used as long as this high transparent material is used. For example, NA ₃ AlF ₆ , MgF ₂ , Al ₂ O ₃ , Y ₂ O ₃ , HfO ₂ , ZrO ₂ , Ta ₂ O ₅ , TiO ₂ , ZnO, PI, IZO, Si ₃ N ₄ , MgO Also good.

In addition, the material of the protective layer has been described using polyimide (PI) as an example, but the material of the protective layer is not limited to polyimide. good. For example, NA ₃ AlF ₆ , MgF ₂ , SiO ₂ , Al ₂ O ₃ , Y ₂ O ₃ , HfO ₂ , ZrO ₂ , Ta ₂ O ₅ , TiO ₂ , ZnO, IZO, Si ₃ N ₄ , MgO, etc. You may use it.

In each of the above embodiments, a top emission type OLED has been described as an example, but the present invention is not limited thereto, and the present invention can also be applied to a bottom emission type or a double-sided emission type (transparent) OLED.

For example, in the case of a bottom emission type OLED, the first electrode side made of a transparent electrode material may be a cathode, and in a double emission type (transparent) OLED, both the first electrode and the second electrode may be formed of a transparent electrode material. . In the case of the double-sided light emission type, the dummy electrode, the insulating layer and the protective layer may be further formed on the second electrode side, and the dummy electrode, the insulating layer and the protective layer may be omitted on the second electrode side.

In addition, each said embodiment is only the illustration of preferable embodiment of this invention to the last, and various changes or a deformation | transformation are possible within the scope of this invention. In addition, each embodiment may be implemented independently, or may be implemented in combination with each other.

<Description of the code>

20, 30, 40 organic light emitting device

21, 31, 41 boards

22, 32, 42 dummy electrode

23, 33, 43 insulation layer

24, 34, 44 first electrode

25, 36, 46 organic light emitting layers

26, 37, 47 second electrode

35 protective layer

Claims (9)

1. Substrate,

   A dummy electrode stacked on the substrate;

   An insulating layer laminated on the dummy electrode;

   A first electrode laminated on the insulating layer;

   An organic light emitting layer laminated on the first electrode;

   A second electrode laminated on the organic light emitting layer,

   An area of the surface of the first electrode is smaller than an area of the surface of the organic light emitting layer,

   The dummy electrode is formed on the entire surface of the substrate.
2. Substrate,

   A dummy electrode stacked on the substrate;

   An insulating layer laminated on the dummy electrode;

   A first electrode laminated on the insulating layer;

   An organic light emitting layer laminated on the first electrode;

   A second electrode laminated on the organic light emitting layer,

   An area of the surface of the first electrode is smaller than an area of the surface of the organic light emitting layer,

   The dummy electrode is formed only in a region other than a region corresponding to the first electrode on the substrate.
3. The method according to claim 2,

   A recess is formed in a region corresponding to the organic light emitting layer on the insulating layer.

   And the first electrode is formed in the recess.
4. The method according to claim 1 or 2,

   The dummy electrode includes ITO, NA ₃ AlF ₆ , MgF ₂ , SiO ₂ , Al ₂ O ₃ , Y ₂ O ₃ , HfO ₂ , ZrO ₂ , Ta ₂ O ₅ , TiO ₂ , ZnO, PI, IZO, Si ₃ N ₄ , MgO, an organic light emitting device comprising any one.
5. The method according to claim 1 or 2,

   The insulating layer is any one of NA ₃ AlF ₆ , MgF ₂ , Al ₂ O ₃ , Y ₂ O ₃ , HfO ₂ , ZrO ₂ , Ta ₂ O ₅ , TiO ₂ , ZnO, PI, IZO, Si ₃ N ₄ , MgO Organic electroluminescent device consisting of one.
6. The method according to claim 1 or 2,

   The dummy electrode has an organic light emitting device having a thickness of 150 to 250nm.
7. The method according to claim 1 or 2,

   The thickness of the dummy electrode and the first electrode is 150nm organic light emitting device.
8. The method according to claim 1 or 2,

   The organic light emitting device further comprises a protective layer formed on the first electrode and the insulating layer.
9. The method according to claim 8,

   The protective layer is PI, NA ₃ AlF ₆ , MgF ₂ , SiO ₂ , Al ₂ O ₃ , Y ₂ O ₃ , HfO ₂ , ZrO ₂ , Ta ₂ O ₅ , TiO ₂ , ZnO, IZO, Si ₃ N ₄ , An organic light emitting device comprising any one of MgO.

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