WO2014184910A1 - Plasma treatment device - Google Patents

Plasma treatment device Download PDF

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Publication number
WO2014184910A1
WO2014184910A1 PCT/JP2013/063594 JP2013063594W WO2014184910A1 WO 2014184910 A1 WO2014184910 A1 WO 2014184910A1 JP 2013063594 W JP2013063594 W JP 2013063594W WO 2014184910 A1 WO2014184910 A1 WO 2014184910A1
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WO
WIPO (PCT)
Prior art keywords
processing gas
gas
processing
generation
spouting
Prior art date
Application number
PCT/JP2013/063594
Other languages
French (fr)
Japanese (ja)
Inventor
陽大 丹羽
智弘 渡邊
森　一明
Original Assignee
富士機械製造株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士機械製造株式会社 filed Critical 富士機械製造株式会社
Priority to JP2015516823A priority Critical patent/JP6360045B2/en
Priority to PCT/JP2013/063594 priority patent/WO2014184910A1/en
Publication of WO2014184910A1 publication Critical patent/WO2014184910A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • the present invention relates to a plasma processing apparatus, and more particularly to an apparatus for heating a surface to be processed of a processing object prior to the plasma processing.
  • a heating unit and an auxiliary heater are provided on the upstream side of the plasma processing unit in the conveyance direction of the workpiece, and an auxiliary heater is provided on the downstream side.
  • the heating unit is configured to heat the workpiece by forming a circulating air heated by a heating means in the hood, and the auxiliary heater is configured to heat the workpiece by radiant heat.
  • the object to be processed is heated in the heating unit, and further heated by the auxiliary heater, and then sent to the processing unit, and a processing gas is sprayed to process the surface to be processed. Since the temperature of the surface to be treated is increased by heating, the reaction rate is fast and the treatment is performed well.
  • the present invention has been made against the background of the above circumstances, and an object of the present invention is to improve the practicality of a plasma processing apparatus that heats a surface to be processed before plasma processing.
  • the plasma processing apparatus uses (a) a gas supplied to the discharge space as a processing gas including at least a reactive species generated in the plasma, and the processing gas is ejected from the processing gas outlet.
  • a generating / spouting section (b) a heated gas generating / spouting section that spouts the heated gas heated by the heater from the heated gas spout, and (c) the treated gas generating / spouting section and the heated gas generating / spouting section,
  • the generating / spouting part holding body that holds the processing gas jet port and the heated gas jet port aligned in one direction, and (d) holds the workpiece to be processed by the processing gas.
  • a workpiece holding body and (e) the generating / spouting portion in a state in which the processing gas ejection port and the heated gas ejection port face a surface to be processed of the workpiece held by the workpiece holding body.
  • the holding body and the object to be processed holding body A relative movement device that relatively moves in a direction in which the gas ejection port and the heating gas ejection port are aligned, and in a direction in which the heating gas ejection port faces the processing surface prior to the processing gas ejection port; It is solved by making it the apparatus which processes the to-be-processed surface heated by heated gas with process gas.
  • the object to be processed is made of, for example, metal, resin, or ceramic, and the surface to be processed is modified and cleaned, for example, by spraying a processing gas.
  • the modification is, for example, improvement of the bonding strength of the surfaces to be treated, hydrophilicity or water repellency, and the cleaning is, for example, sterilization, sterilization, removal of organic substances, or the like.
  • the relative movement device may be a device that moves the generation / spout part holding body, a device that moves the workpiece holding body, or a device that moves both.
  • the processing gas generation / spouting unit and the heated gas generation / spouting unit are both held by the generation / spouting unit holder, and both the generation / spouting unit and the workpiece to be processed held by the workpiece holder are relative moving devices.
  • the heated gas jet port is relatively moved in the direction in which the process gas jet port and the heated gas jet port are arranged, and in the direction in which the heated gas jet port faces the surface to be processed before the process gas jet port.
  • the processing gas as well as the heating gas is directly sprayed on the surface to be processed, thereby simplifying the configuration of the plasma processing apparatus.
  • the configuration can be further simplified.
  • the process gas generation / spout section and the heated gas generation / spout section held by the common generation / spout section holder are close to each other, and the surface to be processed of the object to be processed is heated immediately before the process gas is sprayed. It is desirable that By doing so, the time from heating to treatment is short, the temperature drop of the surface to be treated is small, and the treatment improvement effect by heating, that is, the reaction rate is increased, and the chemical reaction promotion effect is more effectively obtained. It is done.
  • generation / ejection apparatus which are the said process gas production
  • FIG. 1 It is a perspective view which shows the state which looked at the said independent opening type
  • generation / ejection apparatus which are the said process gas production
  • FIG. 8 (a-1), (a-2) is a metal mold
  • generation / spouting apparatus is varied and a process gas spray is performed.
  • the inclination of the heater of the heated air generating / spouting device is made different, and the inclination angle of the heater and the surface to be processed are obtained when the processing gas is sprayed with the distance between the independent opening and the heated air outlet fixed.
  • FIG. 1 schematically shows an atmospheric pressure plasma processing apparatus (hereinafter abbreviated as a plasma processing apparatus) according to an embodiment of the present invention.
  • the present plasma processing apparatus includes a processing apparatus body 10, an independent opening type processing gas generating / blowing device 12, a slit type processing gas generating / blowing device 14 (see FIG. 6), and a heated air generating / blowing device.
  • the to-be-processed object conveying apparatus 18 the production
  • the present plasma processing apparatus is disposed in an atmospheric pressure atmosphere, and the components of the plasma processing apparatus such as the processing apparatus main body 10 are in an atmospheric pressure atmosphere, and conveys an object to be processed, heats a surface to be processed, and sprays a processing gas.
  • the attachment is performed in an atmospheric pressure atmosphere.
  • the workpiece transfer device 18 is constituted by a roller conveyor 30 in the present embodiment.
  • the roller conveyor 30 includes a plurality of rollers 32 rotatably provided in the processing apparatus main body 10, and conveys the workpiece 34 in one direction, in this embodiment, in one horizontal direction.
  • the workpiece 34 is accommodated in the positioning holding member 36 which is a workpiece holder, and is conveyed.
  • a plurality of positioning and holding members 36 are arranged in a line on the roller 32 without gaps in the workpiece conveyance direction, and the plurality of workpieces 34 are continuously conveyed in one direction.
  • the positioning holding member 36 is made of an insulating material, for example, alumina.
  • the roller conveyor 30 is loaded with a positioning and holding member 36 on which an unprocessed workpiece 34 is placed from one side in the workpiece conveyance direction, and is positioned and held on which a processed workpiece 34 is placed.
  • the member 36 is taken out on the other side in the workpiece conveyance direction.
  • the workpiece conveyance direction is the X-axis direction
  • the conveyance plane is constituted by a plurality of rollers 32, and the directions orthogonal to the X-axis direction in one horizontal plane are the Y-axis direction, the X-axis direction, and the Y-axis direction.
  • the perpendicular direction is the Z-axis direction.
  • the workpiece 34 is transported from the loading side to the unloading side to the roller conveyor 30, and the loading side is the upstream side and the unloading side is the downstream side in the workpiece transport direction.
  • the object to be processed 34 for example, molds 34a and 34c illustrated in FIG. 8A-1 and FIG. 8C-1 and a liquid crystal substrate 34b illustrated in FIG. Is processed.
  • a recess 41 corresponding to the shape of the product to be molded is provided in the recess 39 of the mold 34a, and the surface to be processed 38a, which is the surface of the mold 34a, has irregularities.
  • the recess 41 has a large cross-sectional area but is shallow.
  • the liquid crystal substrate 34b has a flat plate shape, and the surface to be processed 38b has a single flat shape.
  • a convex portion 45 corresponding to the shape of the product to be molded is provided in the concave portion 43 of the mold 34c, and the surface to be processed 38c, which is the surface of the mold 34c, has irregularities.
  • the convex portion 45 has a smaller cross-sectional area than the concave portion 41.
  • the processing apparatus main body 10 is provided with a generating / blowing apparatus lifting / lowering device 20 above the workpiece transfer apparatus 18.
  • the generating / spouting device lifting device 20 includes a lifting member 40 that is a movable member and a lifting member driving device 42.
  • the elevating member driving device 42 includes an electric motor 44 as a driving source and a feed screw mechanism 46, and the feed screw mechanism 46 includes a feed screw 48 and a nut (not shown).
  • the feed screw 48 is rotated by the electric motor 44, the elevating member 40 is moved up and down while being guided by the guide rail 54 constituting the guide device 52, and is moved to an arbitrary position in the Z-axis direction. 36 is approached and separated.
  • the electric motor a servo motor with an encoder which is a kind of rotary electric motor capable of accurately controlling the rotation angle is suitable, and a ball screw is suitable as the feed screw.
  • the elevating member 40 is mounted with one of the independent opening type processing gas generation / spout device 12 and the slit type processing gas generation / spout device 14 and the heated air generation / spout device 16.
  • FIG. 1 shows a state where the independent opening type processing gas generation / spouting device 12 is mounted.
  • the independent opening type processing gas generation / spouting device 12 and the slit type processing gas generation / spouting device 14 share the processing gas generation device 70 as a processing gas generation unit, thereby suppressing an increase in device cost.
  • the independent opening type processing gas generating / spouting device 12 is a unique jetting part, and includes an independent opening type jetting device 72 that is an independent opening type jetting part, and as shown in FIG.
  • the processing gas generation / spouting device 14 is a unique spouting unit, and includes a slit-type spouting device 74 that is a slit-type spouting unit.
  • the processing gas generation device 70 is detachably attached to the elevating member 40 by a plurality of bolts which are a kind of fixing means in a processing gas generation device main body 80 (see FIG. 1) which is the main body.
  • a plurality of, for example, two electrodes 84 and 86 are provided in the processing gas generation apparatus main body 80 in a posture extending in the Z-axis direction and spaced apart in the Y-axis direction.
  • a discharge space 88 is provided between 86. Gas is supplied to the discharge space 88 through a supply port (not shown) provided in the upper portion of the processing gas generation apparatus main body 80 and a supply passage provided in the processing gas generation apparatus main body 80.
  • the gas is, for example, a gas containing nitrogen and dry air.
  • Plasma is generated in the discharge space 88 by applying a voltage to the electrodes 84 and 86, and the gas supplied to the discharge space 88 is a processing gas containing oxygen radicals as reactive species generated in the plasma.
  • Plasma is generated by electrical discharge, that is, dielectric breakdown, and includes charged particles such as positive ions and negative ions, neutral particles such as radicals, electrons, etc., and is electrically neutral as a whole.
  • the reactive species refers to electrically neutral neutral particles such as excited atoms and molecules, for example, highly reactive excited species such as radicals. Excitation refers to transition from a low energy ground state to a high energy state.
  • excitation is caused by excitation of atoms or molecules by discharge or collision of charged atoms in plasma with atoms or molecules.
  • the reactive species obtained by being excited due to the discharge are reactive species generated in the plasma.
  • a radical refers to a chemical species having unpaired electrons and is also referred to as a free radical.
  • the processing gas flows out from the discharge space 88 through the processing gas outflow passage 90.
  • the process gas outflow passages 90 are provided in a line at least one, for example, a plurality, for example, four in the present embodiment, at an appropriate interval in the Y-axis direction, and at an equal interval in the present embodiment.
  • Each processing gas outflow passage 90 extends from the discharge space 88 to the upstream side in the workpiece transfer direction in parallel to the X-axis direction, and is opened to the outer surface of the processing gas generation apparatus main body 80, and in the middle thereof. Are vertically extended downward and are opened on the lower surface of the processing gas generator main body 80.
  • the processing gas generation device main body 80 is provided with a heat radiating portion 92 on the outer surface where the processing gas outflow passage 90 is opened to close the opening of the processing gas outflow passage 90.
  • the heat radiating portion 92 includes a plurality of plate-like fins 94 provided at intervals in the Y-axis direction in the present embodiment.
  • a ground member 96 is attached to the processing gas generator main body 80 and is grounded.
  • the independent opening type ejecting apparatus main body 100 which is the main body of the independent opening type ejecting apparatus 72 has a block shape and is detachably fixed to the lower surface of the processing gas generating apparatus main body 80 by a bolt 102. Attachment and removal of the independent opening type ejection device 72 is performed by an operator. As shown in FIG. 3, a connection portion 104 and a processing gas outflow passage 106 are provided in the independent opening type ejection device main body 100.
  • the connecting portion 104 opens on the upper surface of the independent opening type ejecting apparatus main body 100, forms a longitudinal concave shape extending in parallel to the Y-axis direction, and is upstream in the workpiece conveying direction of the independent opening type ejecting apparatus main body 100. Is provided at the end.
  • the processing gas outflow passage 106 is provided with at least one, for example, a plurality, for example, six in this embodiment. These processing gas outflow passages 106 are provided in a line at equal intervals in the Y-axis direction in the present embodiment, and are conveyed in the X-axis direction of the connecting portion 104 as shown in FIG. Is extended downward in the Z-axis direction from a portion on the upstream side in the direction, and is opened on the lower surface of the independent opening type ejecting apparatus main body 100. These openings constitute independent openings 108 which are independent processing gas jets, and as shown in FIG. 3, six independent openings 108 are arranged at equal intervals on a straight line parallel to the Y-axis direction. A column 110 is configured. In the present embodiment, the diameter of the independent openings 108 is 1.2 mm, and the formation pitch of the six independent openings 108 (the distance between the centers of the two adjacent independent openings 108) is 4 mm.
  • the slit-type ejection device main body 120 that is the main body of the slit-type ejection device 74 is formed by integrally assembling a plurality of, for example, two main body constituent members 122 and 124.
  • path 132 are formed.
  • the connection part 130 is opened in the upper surface of the slit-type ejection apparatus main body 120, and comprises the longitudinal recessed part shape extended in a Y-axis direction.
  • the slit-shaped passage 132 is long in the Y-axis direction, has an upper end that opens to an end on the upstream side in the workpiece conveyance direction of the connection portion 130, and a lower end that conveys the workpiece on the lower surface of the slit-type ejection device main body 120. In the direction, it is opened at the upstream end.
  • the lower surface opening of the slit-shaped passage 132 constitutes a slit-shaped opening 144 serving as a processing gas ejection port extending along a straight line parallel to the Y-axis direction.
  • the slit-type ejection device body 120 has the same shape and dimensions as the independent opening-type ejection device body 100, and the connection portion 130 has the same shape and dimensions as the connection portion 104, and the connection portion 104 is connected to the slit-type ejection device body 120.
  • the opening area of the slit-shaped opening 144 is larger than the sum of the opening areas of the six independent openings 108.
  • the slit type jet device main body 120 is fixed to the lower surface of the processing gas generating device main body 80 at the same position as the independent opening type jet device main body 100 by bolts 102.
  • Attachment and removal of the slit-type ejection device 72 is performed by an operator.
  • the four processing gas outflow passages 90 are communicated with the connecting portion 130, and the processing gas passes through the slit-like passage 132 downward from the slit-like opening 144 (below the vertical direction). It is ejected in a strip shape extending in the axial direction.
  • FIG. 4 is a diagram showing a state in which the independent opening type ejection device 72 is attached to the processing gas generation device 70 as viewed from the front, and the independent opening type ejection device 72 and the slit type ejection device 74 are treated with the process gas generation.
  • the positions of the connecting portion 104 and the independent opening row 110 with respect to the processing gas generating apparatus 70 are the same as the positions of the connecting portion 130 and the slit-shaped opening 144, and both are denoted by the same reference numerals.
  • the independent opening type jet apparatus main body 100 and the slit type jet apparatus main body 120 are brought into close contact with the lower surface of the process gas generating apparatus main body 100 by being fixed to the process gas generating apparatus main body 100 by the bolts 102, and from between them. Process gas leakage is prevented.
  • the independent opening type jetting device 72 and the slit type jetting device 74 are alternatively attached to the processing gas generation device 70, and the independent opening type processing gas generation is achieved by mounting the independent opening type jetting device 72 to the processing gas generation device 70.
  • the independent opening type processing gas generation / spouting device 12 as the ejection portion is configured, and the slit type processing gas generation / spouting device 14 as the slit type processing gas generation / spouting portion is configured by mounting the slit type spraying device 74.
  • the positions of the independent opening 108 and the slit-shaped opening 144 in the Z-axis direction are the same.
  • the heated air generator / spout device 16 includes a heater 150, and heats and blows out air as a heated gas.
  • the heater 150 is detachably fixed to the outer surface on the upstream side of the processing gas generation apparatus main body 80 in the workpiece conveyance direction by brackets 152, 154 and 156.
  • the heater 150 has a heat generating part 160 in which a coil-shaped heating element is accommodated in a tube, for example, a quartz tube, and has a longitudinal shape.
  • a heating air ejection part 162 is provided at a lower end portion which is one end in the longitudinal direction of the heat generating part 160. Is provided. As shown in FIG.
  • the heated air ejection portion 162 has a flat plate shape, and its thickness (the dimension in the direction along the X-axis direction) is smaller than the outer diameter of the heat generating portion 160.
  • a slit-shaped passage 164 provided inside the heated air ejection section 162 is communicated with the heat generating section 160 and is opened on the lower surface of the heated air ejection section 162. This opening constitutes a heated air outlet 166, and the heated air is jetted downward.
  • the heated air ejection port 166 is long in the Y-axis direction, and in the Y-axis direction, the entire region where the process gas ejected by the independent opening type ejection device 72 and the slit-type ejection device 74 reaches the surface to be treated can be heated. It is supposed to have a possible length.
  • the heater 150 has the upper end of the heat generating part 160 held by a holder 168, and the holder 168 is held by a bracket 152 that is detachably fixed to the processing gas generator main body 80 by bolts (not shown).
  • a power line (not shown) is inserted from the holder 168 into the heat generating portion 160, and a voltage is applied to the coil.
  • the heater 150 is also held by brackets 154 and 156 that are detachably fixed to the processing gas generating apparatus main body 80 by bolts in the middle portion in the longitudinal direction.
  • the heater 150 is covered with covers 170 and 172.
  • the covers 170 and 172 are fixed to the processing gas generation apparatus main body 80 by bolts and are detachable.
  • the heater 150 is attached to and detached from the processing gas generation device main body 80 by attaching and detaching the brackets 152, 154, and 156 to the processing gas generation device main body 80 by an operator.
  • the heated air generating / blowing device 16 is configured separately from the processing gas generating / blowing devices 12 and 14 and is separable from each other, and is connected to the elevating member 40 via the processing gas generating / blowing device 12 or 14.
  • the independent opening 108 or the slit-shaped opening 144 and the heated air outlet 166 are detachably held in a state aligned in one direction parallel to the workpiece conveyance direction, and are integrated with the processing gas generation / ejection device 12 or 14. The workpiece 34 is moved closer to and away from the workpiece 34.
  • the elevating member 40 constitutes a generation / ejection part holder, and the production / ejection device elevating device 20 constitutes an approach / separation device. It can also be considered that the elevating member 40 and the generation / spout part holding body are integrally provided.
  • the heater 150 as a whole is compared with the processing gas generation / ejection device 12 (the processing gas generation / ejection device 14 when the slit type ejection device 74 is attached to the processing gas generation device 70). Mounted in an inclined position.
  • the heating air ejection direction is inclined with respect to the vertical processing gas ejection direction.
  • the Z-axis direction between the independent opening 108 or the slit-shaped opening 144 and the heating air ejection port 166 is used.
  • the positions are the same, and the ejection direction of the heated air from the heated air outlet 166 and the ejection direction of the processing gas from the openings 108 and 144 are between the centers of the openings 108 and 144 and the heated air outlet 166. From the distance (hereinafter, referred to as the distance between the center of the processing gas and heated air outlet), the distance between the centers of the two reaching regions where the processing gas and the heated air reach the processing surface 38 of the workpiece 34 respectively. The distances (hereinafter, referred to as distances between the centers of the reaching regions) are crossed with each other in a direction in which the X ′ becomes smaller.
  • the “center of the reaching region” is an intersection of a straight line extending in parallel to each ejection direction from the center of the independent opening row 110 or the center of the slit-shaped opening 144 or the center of the heated air outlet 166 and the surface to be processed 38.
  • the inclination angle of the heated air ejection direction with respect to the processing gas ejection direction is defined as a negative inclination in which the center distance X ′ is smaller than the center distance X as described above.
  • the heated air ejection direction be inclined with respect to the processing gas ejection direction.
  • the process gas generator / spouter has a more complicated structure, and it is easier to tilt the heated air jet direction, and the processing gas is perpendicular to the surface to be processed. This is because spraying from any direction can spray more smoothly than spraying from an oblique direction.
  • the processing apparatus main body 10, the processing gas generation / spouting devices 12, 14, the heated air generation / spouting device 16, the workpiece transfer device 18, the generation / spouting device lifting / lowering device 20 and the like are provided by a housing 174 as shown in FIG. Covering and preventing leakage of noise generated during processing and contact between an operator and an object to be processed or an apparatus during processing are prevented.
  • the object to be processed and the spraying of the processing gas are performed in an atmospheric pressure atmosphere. Therefore, the housing 174 forms an airtight space as in the case where the processing is performed in a low pressure atmosphere.
  • the configuration of the plasma processing apparatus, particularly the configuration of the housing 174, can be simplified, and the workpiece can be easily carried in and out.
  • the control device 22 is mainly composed of a computer, and controls the roller conveyor 30, the electric motor 44, the processing gas generation device 70, the heater 150 and the like through a drive circuit.
  • an encoder 180 and a distance sensor 182 which are rotation amount detection devices provided in the electric motor 44, are connected to the computer.
  • the distance sensor 182 is provided on the upstream side of the elevating member 40 in the workpiece conveyance direction of the processing apparatus main body 10 and on the upstream side of the heated air generating / blowing device 16, and to the processing surface 38 of the workpiece 34. Detect the distance.
  • the distance sensor 182 is constituted by, for example, a laser displacement sensor.
  • the laser displacement sensor condenses the laser beam generated by the laser beam generator by the light projecting optical system and irradiates the processing surface 38, and condenses the reflected light on the semiconductor position detecting element by the light receiving optical system,
  • the reflected light condensing position is calculated by an analog arithmetic circuit. Since the condensing position on the semiconductor position detecting element changes depending on the position of the processing surface 38 in the height direction, the distance between the distance sensor 182 and the processing surface 38 is obtained by calculating the condensing position.
  • the distance sensor 182 constitutes a distance detection unit.
  • the surface to be processed 38 is heated and the processing gas is sprayed while the object 34 is being conveyed.
  • the independent opening type processing gas generation / spouting device 12 or the slit type processing gas generation / spouting device 14 and the heated air generation / spouting device 16 are positioned above the processing target 34 conveyed by the roller conveyor 30 and are processed.
  • a heated air outlet 166 of the heated air generating / blowing device 16 provided on the upstream side of the processing gas generating / blowing devices 12, 14 in the transport direction precedes the independent opening 108 or the slit-shaped opening 144 and the surface to be treated 38.
  • the surface to be processed 38 is heated prior to the spraying of the processing gas. Thereby, the effect of the treatment by spraying the treatment gas, for example, the removal of the dirt on the surface to be treated 38 or the hydrophilic improvement treatment is enhanced.
  • the independent opening type jet device 72 and the slit type jet device 74 are alternatively used for spraying the processing gas.
  • the processing gas generated in the discharge space 88 passes through the six processing gas outflow passages 106 in the independent opening type ejection device 72 and is ejected in the form of a rod from each of the six independent openings 108, and the slit type ejection device. In 74, it passes through the slit-shaped passage 132 and is ejected from the slit-shaped opening 144 in a band shape.
  • the amount of processing gas used per minute in the ejection devices 72 and 74 is the same, and the plasma ejected from the independent opening 108 reaches farther than the plasma ejected from the slit-shaped opening 144 and can reach the plasma.
  • the distance is long.
  • the plasma reachable distance is obtained by experiment, and actually the reachable distance of the plasma ejected from the independent opening 108 is longer.
  • the opening area of the slit-shaped opening 144 is larger than the sum of the opening areas of the six independent openings 108, so that the processing gas ejected from the openings 108 and 144 is used. It is presumed that the flow velocity of the independent aperture 108 is faster than the slit-shaped aperture 144 and is far away.
  • the experiment for obtaining the plasma reachable distance is performed by using a glass plate as an object to be processed, spraying a processing gas on a surface to be processed which is a flat surface of the glass plate, and measuring the processing effect.
  • the treatment effect is, for example, by dropping water droplets at a plurality of locations on the surface of the glass plate, measuring the contact angle of each water droplet with a contact angle meter (for example, manufactured by Kyowa Interface Science Co., Ltd.), obtaining the average value thereof, It is obtained by detecting (hydrophilicity).
  • a plurality of distances between the openings 108 and 144 and the surface to be processed (hereinafter, referred to as a distance between the processing gas ejection port and the surface to be processed).
  • a distance between the processing gas ejection port and the surface to be processed measure the treatment effect by spraying the treatment gas while conveying the glass plate, and when the average contact angle below the set value is obtained, the maximum distance between the treatment gas outlet and the surface to be treated Is the plasma reachable distance.
  • the transport speed is varied among a plurality of types, and the plasma reachable distance is acquired for each speed.
  • a longer plasma reachable distance was obtained for the independent opening type jetting device 72 than for the slit type jetting device 74, regardless of the magnitude of the conveying speed of the glass plate. Further, in both the independent opening type jetting device 72 and the slit type jetting device 74, a longer plasma reachable distance was obtained by lowering the conveying speed of the workpiece. Further, when the surface to be processed is heated by the heater 150 prior to spraying the processing gas by the independent opening type ejection device 72, a longer plasma reachable distance is obtained than when no heating is performed, and the same plasma as that at the time of non-heating is obtained. If the reachable distance, the result that the workpiece conveyance speed can be increased was obtained.
  • the independent opening type jetting device 72 is suitable for the treatment of the workpiece having the uneven surface, and in this embodiment, the independent opening type jetting device 72 is used for the processing of the molds 34a and 34c.
  • the surface to be processed has irregularities and the distance between the processing gas outlet and the surface to be processed is not constant, if the plasma reachable distance is short, there will be a portion where the processing gas does not reach the surface to be processed. This is because if the distance is long, the influence of the difference between the distance between the processing gas outlet and the surface to be processed is reduced, and the processing gas can be sprayed.
  • the surface to be processed 38a is heated to increase the plasma reachable distance, so that it is possible to reliably cope with the difference in the distance between the processing gas ejection port and the surface to be processed due to unevenness. . Further, since the distance between the processing gas ejection port and the surface to be processed is long, the plasma in the processing gas ejected from each of the six independent openings 108 intersects in the vicinity of the surface to be processed due to diffusion, and the arrangement direction of the independent openings 108 Are sprayed on the surface to be processed in a substantially uniform band shape.
  • the slit type ejection device 74 is used for processing the liquid crystal substrate 34b. .
  • the surface to be processed 38b is not heated. This is because it is not necessary to cope with a change in the distance between the processing gas ejection port and the surface to be processed due to the unevenness, and it is not necessary to extend the plasma reachable distance by heating.
  • the processing gas is sprayed in a band shape on the surface to be processed 38 b, and the processing gas is sprayed uniformly in the longitudinal direction of the slit-shaped opening 144.
  • the inclination angle ⁇ in the ejection direction, the distance X between the center of the processing gas / heated air outlet and the distance X ′ between the centers of the reaching regions are based on data obtained in advance by experiments. Is set.
  • a glass plate is used as the object to be treated, and an independent opening type ejection device 72 is used as the processing gas ejection device, and the distance Z between the processing gas ejection port and the surface to be processed is a plurality of kinds of plasma arrivals obtained by the experiment.
  • the maximum distance among the possible distances was used, and the glass plate was transported at the transport speed when the maximum plasma reachable distance was obtained. Further, the flow rate of the heated air ejected from the heated air ejection port 166 was made smaller than the flow rate of the processing gas ejected from the independent opening 108.
  • the heater 150 is not tilted, and the process gas ejection direction and the heated air ejection direction are both downward in the vertical direction, and the center distance X between the process gas and heated air ejection outlets is made different into a plurality of types.
  • the processing gas was sprayed and the processing effect was measured. The result is shown in the graph of FIG.
  • the center distance X between the processing gas and the heated air jet outlet is a limit value, that is, the entire independent opening type processing gas generating / blowing device 12 and the entire heated air generating / blowing device 16 (heater 150). Is a distance in a vertical posture and in a state of being close to a position that can be approached most in terms of their device configuration, the average contact angle becomes the smallest and a high processing effect is obtained. If the distance X between the center of the processing gas and the heated air outlet is made slightly larger than the limit value, the average contact angle increases rapidly. Thereafter, if the distance X between the center of the processing gas and the heated air outlet is increased, the average contact angle increases. However, the result was gentle. Thereby, it can be seen that it is desirable that the distance X between the center of the processing gas and the heated air outlet is a limit value and a distance close thereto.
  • the surface to be processed and the processing gas are sprayed at atmospheric pressure (in the atmosphere). While the temperature of the surface to be processed decreases in the meantime, the shorter the distance X between the center of the processing gas and heated air outlet, the shorter the time from heating to processing gas injection, and the lower the temperature of the surface to be processed. This is considered to be due to the improvement of the processing effect.
  • the inclination angle 0 is a state in which the processing gas ejection direction and the heated air ejection direction are parallel, and the state in which the inclination angle is positive indicates that the heating air ejection direction is greater than the processing gas ejection direction.
  • the center-to-center distance X is tilted in a direction that becomes smaller than the reaching region center-to-center distance X ′.
  • the heater 150 is tilted, the treatment effect is improved, but it is not necessary to tilt the heater 150 greatly, and there is an appropriate tilt angle range.
  • the reason is considered as follows. If the heater 150 is tilted from a state in which the tilt angle of the heated air ejection direction is zero to a negative direction, the distance X ′ between the reach area centers becomes shorter than the distance X between the center of the processing gas and the heated air ejection port, and the process from the heating The time until gas spraying can be shortened, the temperature drop of the surface to be processed can be reduced, and the processing effect is improved. However, if the heater 150 is tilted too much, it is considered that the heated air jet direction is close to the right angle with respect to the process gas jet direction, and the process gas is blown off.
  • the feature of making the flow rate of the heated air smaller than the flow rate of the processing gas is that the distance X ′ between the arrival region centers is smaller than the center distance X between the processing gas and the heating air ejection center in the heating air ejection direction and the processing gas ejection direction.
  • the distance X ′ between the centers of the reaching regions changes by changing the inclination angle ⁇ , and the smaller the inclination angle ⁇ (the more negative the value, the absolute value It can be seen that as the value increases, the distance X ′ between the centers of the reaching regions decreases and the average contact angle decreases.
  • the inclination angle ⁇ is set to a size when the average contact angle is minimized as a result of the experiment shown in the graph of FIG. It was done.
  • the result is shown in the graph of FIG. Also from this graph, it can be seen that the processing effect is improved as the distance X ′ between the centers of the reaching regions is smaller.
  • the limit value of the distance X ′ between the arrival areas is the minimum distance in the range where the ejection of the heated air does not interfere with the injection of the processing gas, that is, the range where the heated air arrival area does not interfere with the treatment gas arrival area.
  • the approach of the heater 150 to the independent opening type processing gas generation / ejection device 12 is limited by the heat radiating unit 92, whereas when the heater 150 is inclined, as shown in FIG.
  • the heated air ejection portion 162 having a thickness smaller than that of the heat generating portion 160 enters below the heat radiating portion 92. Therefore, the heated air outlet 166 can be brought closer to the independent opening 108 than when the heater 150 is provided vertically. Therefore, the limit value of the distance X ′ between the reach regions is the limit value when the process gas / heated air outlet center distance X is not inclined in the direction of heating air injection, and the heater 150 is set to the inclination angle ⁇ of this experiment.
  • An average contact angle smaller than the minimum distance X ′ obtained by the first experiment can be obtained which is smaller than the distance X ′ between the centers of the reaching regions when tilted by the same angle.
  • the inclination angle ⁇ of the heated air ejection direction with respect to the processing gas ejection direction is a negative value, and the experiment shown in the graph of FIG. 12 is performed.
  • the magnitude is ⁇ 20 degrees
  • the center-to-center distance X ′ is 7.5 mm, which is a limit value in that case.
  • the distance Z between the processing gas ejection port and the surface to be treated is the maximum plasma reachable distance obtained in the independent opening type jetting device 72
  • the transfer speed is the speed at which the maximum plasma reachable distance is obtained. Is done.
  • the distance X ′ between the arrival area centers is not generally defined. If the conveyance speed is slow, the heating time is long, the object to be processed is heated to the inside and the temperature is difficult to decrease, and the processing surface is sprayed while the surface to be processed is heated even if the distance X ′ between the arrival area centers is long. Can be processed. Further, although the heating time is short if the transport speed is high, the processing surface can be processed in a heated state by shortening the distance X ′ between the centers of the reaching regions.
  • the independent opening type ejection device 72 is attached to the processing gas generation device main body 80.
  • the mold 34 a is held and conveyed by the positioning holding member 36, and is conveyed in the direction from the heated air generating / blowing device 16 toward the independent opening type processing gas generating / blowing device 12.
  • a heated air outlet 166 of the heated air generating / blowing device 16 located upstream in the conveying direction is opposed to the surface to be processed 38a prior to the independent opening 108, and a processing gas is sprayed onto the surface to be processed 38a. Prior to this, heated air is sprayed. Then, the processing gas is sprayed on the surface to be processed 38a in a state where the temperature is raised by heating, and the dirt is removed. The same applies to the mold 34c.
  • the mold 34a has a recess 39, a recess 41 is provided in the recess 39, and the surface 38a to be processed (including the end face of the edge of the mold 34a) is uneven. Therefore, the independent opening type processing gas generating / blowing device 12 is moved up and down along the unevenness of the processing surface 38a, and the distance between the independent opening 108 and the processing surface 38a is set to a preset distance. The processing gas is sprayed in the state. However, the independent opening type processing gas generating / blowing device 12 is not moved up and down along all the irregularities of the surface 38a to be processed, but is moved substantially along.
  • the position where the distance between the independent opening 108 and the processing surfaces 38a and 38c is the set distance for the independent opening type processing gas generating / blowing device 12.
  • the surface to be positioned at is set in advance and is input and stored in the computer as a reference surface or a target surface.
  • the reference plane defines the relative movement path of the independent opening type processing gas generation / spouting device 12 with respect to the object 34 in the approach / separation direction and the relative movement direction by the relative movement device.
  • the reference plane can be automatically set by a computer in accordance with the shape and dimensions of the workpiece, but here it is determined by the operator for the sake of simplicity.
  • the independent opening type processing gas generating / blowing device 12 is moved up and down at a height that does not hit the edges of the molds 34a and 34c.
  • the operator sets the reference plane based on the shape and dimensions of the workpiece. For example, for the mold 34a, the difference in height between the end face of the edge and the bottom face of the recess 39 is large.
  • the recess 41 has a large cross-sectional area but is shallow and the difference in height from the surrounding portion of the recess 41 is small, the operator determines that the plasma reaches sufficiently as in the surrounding portion, and FIG.
  • a surface including the end surface of the edge of the mold 34a and the surface of the bottom surface of the recess 39 where the recess 41 is not formed is taken as a reference surface 184.
  • the convex portion 45 has a small cross-sectional area, so that the operator determines that the plasma treatment is performed in the same manner as the portion around the convex portion 45, and is indicated by a thick line in FIG. 8 (c-2).
  • a surface including the end surface of the edge of the mold 34c and the surface of the bottom surface of the concave portion 43 where the convex portion 45 is not formed is taken as a reference surface 186.
  • the reference surfaces 184 and 186 are defined by reference surface data in which the position in the direction parallel to the workpiece conveyance direction and the height relative to the lower surfaces of the molds 34a and 34c at the position are associated with each other.
  • the position in the direction parallel to the workpiece conveyance direction is determined with the downstream end in the conveyance direction of the workpiece 34 as the origin.
  • the height of the portion of the bottom surface of the concave portion 39 where the concave portion 41 is not formed is associated with the position in the direction parallel to the conveyance direction, and stored as reference plane data. Will be.
  • the height of the portion of the bottom surface of the concave portion 43 where the convex portion 45 is not formed is associated with the position in the direction parallel to the conveyance direction, and the reference plane data As memorized.
  • the support surface that supports the lower surface of the workpiece 34 of the positioning holding member 36 is used as a reference for the vertical position.
  • the distance between the distance sensor 182 and the surface to be processed 38a is detected by the distance sensor 182. From this detection distance, the height from the lower surface of the mold 34a of the part whose distance is detected by the distance sensor 182 of the processing surface 38a is obtained.
  • the distance sensor 182 and the roller conveyor 30 are provided in the processing apparatus main body 10, and their positions in the vertical direction are not changed, and the surface to be processed 38 of the object to be processed 34 that is held and conveyed by the positioning holding member 36 and the distance sensor 182 This is because the distance between is determined by the height of the surface 38 to be processed.
  • the distance sensor 182 and the independent opening 108 are separated in a direction parallel to the workpiece conveyance direction, but the distance is detected by the distance sensor 182 on the workpiece surface 38a based on the separation distance and the workpiece conveyance speed. Is obtained from the distance detection position where the distance is detected by the distance sensor 182 to the position below the independent opening 108, and the distance is detected by the distance sensor 182 of the processing surface 38a. It can be seen that the part reaches the lower side of the independent opening 108.
  • the processing gas injection start end of the mold 34a which is the downstream end of the processing surface 38a in the workpiece conveyance direction, is detected, and the start end reaches below the independent opening 108. Then, the independent opening type processing gas generating / spouting device 12 is positioned at a position determined by the reference plane data and the set distance between the processing gas outlet and the processing target surface in the vertical direction with respect to the mold 34a. . As a result, the independent opening type processing gas generating / spouting device 12 is lowered after passing over the edge of the recess 39 of the mold 34a, and is brought close to the bottom surface of the recess 39 at a position lower than the edge.
  • the processing gas can be sprayed to obtain the processing gas spraying effect.
  • the independent opening type processing gas generating / blowing device 12 is not moved up and down corresponding to the recess 41, and the independent opening 108 has a surface to be processed 38a as shown by a two-dot chain line in FIG. 8 (a-2).
  • the gas is relatively moved along the direction of the gas and sprays the processing gas.
  • the independent opening type processing gas generating / blowing device 12 is not moved up and down in correspondence with the convex portion 45, and the object to be processed as shown by a two-dot chain line in FIG. 8 (c-2).
  • a processing gas is sprayed in a state substantially along the surface 38c.
  • the distance sensor 182 After detecting the downstream ends of the molds 34a and 34c, the distance sensor 182 does not detect the distance until the molds 34a and 34c pass. After the passage, the distance sensor 182 restarts the detection, and the subsequent molds 34a and 34c. The downstream end of is detected.
  • the passage of the molds 34a and 34c is known from the dimensions of the molds 34a and 34c.
  • the processing gas ejected in a rod shape from the independent opening 108 has a long plasma reachable distance and reaches any surface of the recesses 39 and 43 so that the surface to be processed 38 is processed.
  • the processing surfaces 38a and 38c are uneven, and the processing gas ejection direction downward in the vertical direction is generally perpendicular to the direction along the processing surface.
  • the detection of the processing gas injection start end of the object to be processed 34 based on the distance detection of the distance sensor 182 of the computer of the control device 22, the reference surface data, and the set distance between the processing gas outlet and the processing surface are set.
  • the part that controls the electric motor 44 based on the above constitutes an approach / separation control unit or a surface to be processed tracking unit.
  • the slit-type ejection device 74 is attached to the processing gas generation device main body 80.
  • the surface to be processed of the object to be processed is not heated.
  • the heated air generating / blowing device 16 may be removed from the processing gas generating device main body 80 or may remain attached.
  • the distance Z between the processing gas ejection port and the surface to be processed is set based on the plasma reachable distance obtained in the slit-type ejection device 74 and the transport speed of the liquid crystal substrate 34b.
  • the slit-shaped opening 144 is positioned at a position where the distance Z between the processing gas ejection port and the surface to be processed becomes a set distance.
  • the liquid crystal substrate 34b is accommodated in the positioning holding member 36, and a processing gas ejected from the slit-type ejection device 74 is sprayed while being conveyed, and the surface to be processed 38b is processed.
  • the processing gas is sprayed by the slit type processing gas generating / blowing device 14, the surface to be processed may be heated prior to the processing gas spraying.
  • the atmospheric pressure plasma processing apparatus of this embodiment (hereinafter abbreviated as “plasma processing apparatus”), as schematically shown in FIG. 13, has a lifting / lowering member 201 serving as a generation / ejection part holder of the generation / ejection apparatus lifting / lowering apparatus 200.
  • a processing gas generation / injection device 202 is provided, and heated air generation / injection devices 204 and 206 are provided on both sides thereof.
  • the processing gas generation / ejection device 202 includes a processing gas generation device 210 and a processing gas ejection device 212, and the heated air generation / ejection devices 204 and 206 include a heating unit 220 and a heating air ejection unit 222, respectively.
  • Each heat generating part 220 is provided in a posture in which the longitudinal direction is vertical and parallel to the processing gas generating / blowing device 202.
  • Each heated air ejection part 222 is provided at the lower end part of the heat generating part 220 and is extended downward in the vertical direction after being extended to the processing gas ejection device 212 side.
  • the heated air ejection part 222 is bent to bring the heated air ejection part 222 closer to the process gas ejection device 212, and the process gas ejection direction and the heated air ejection direction are parallel to each other in the vertical direction.
  • the heated air has no fear of blowing off the processing gas.
  • distance sensors 226 and 228 are provided at portions on the opposite side of the processing gas generation / injection device 202, respectively, of the heated air generation / injection devices 204 and 206 in a direction parallel to the workpiece conveyance direction. Is provided.
  • Other configurations are the same as those of the above-described embodiment, and corresponding components are denoted by the same reference numerals and description thereof is omitted.
  • an independent opening type processing gas generating / blowing apparatus is used as the processing gas generating / blowing apparatus 202.
  • the processing object 230 is used, and the processing object 230 is reciprocated by the processing object transport device 18 to perform processing.
  • the heated air generation / spouting device 204 on the upstream side of the processing gas generation / spouting device 202 in the forward direction causes the heated air to be covered from the heated air ejection port of the heated air ejection unit 222. It is sprayed on the processing surface and heated.
  • the heated air ejection part 222 is brought close to the processing gas ejection device 212, and the processing gas is sprayed from the processing gas ejection port of the processing gas ejection device 212 immediately after heating to the surface to be treated. Further, the downstream end of the workpiece 230 is detected based on the distance detection by the upstream distance sensor 226 of the heated air generating / spouting device 204, and the lifting member 201 is set to the reference plane data and the set processing gas jet port. The substrate is moved up and down according to the distance between the processing surfaces, and the processing gas ejection device 212 sprays the processing gas substantially along the processing surface 232.
  • the object to be processed 208 is conveyed in the reverse direction, here, from the object extraction device side to the object input device side.
  • heated air flows from the heated air ejection port of the heated air ejection section 222 of the heated air generation / ejection device 206 located upstream of the processing gas generation / ejection device 202 in the conveyance direction.
  • the surface to be processed is heated prior to the injection of the processing gas.
  • the detection of the downstream end of the object 230 based on the detection of the distance by the distance sensor 228 on the upstream side of the heated air generating / injecting device 206 and the adjustment of the position of the processing gas generating / injecting device 202 in the height direction are performed. .
  • the workpiece 230 is reciprocated, and the processing surface 232 is processed twice, so that the entire processing surface with unevenness is sufficiently processed without omission. It is also possible to process an object to be processed three or more times.
  • heated air is jetted to the heated air generating / blowing device downstream of the processing gas generating / blowing device 202 in the direction of the workpiece to be processed, and the processed surface is heated to prevent a temperature drop and processing gas.
  • a chemical reaction caused by spraying may be promoted.
  • a heating gas particularly an inert gas, for example, nitrogen gas. It is desirable that the heated air generating / blowing devices 204 and 206 are provided on both sides of the 202 and the heated air is jetted before and after the processing of the workpiece 208, so that the state is close to the state of surrounding the plasma.
  • the object When processing an object having an uneven surface such as the liquid crystal substrate 34b by the plasma processing apparatus, the object is moved once from the object input device side to the object extraction device side. The process gas is sprayed once. In this case, if the surface to be processed 38 b is heated, the heated air generating / injecting device 204 located upstream of the processing gas generating / injecting device 202 in the set processing object conveyance direction is used for heating.
  • the heated gas generating / spouting device has one heat generating portion and two heated gas ejecting portions, and the heated gas heated in the heat generating portion is alternatively selected from the heated gas ejection ports of the two heated gas ejecting portions.
  • a device to be ejected may be provided, and two heated gas ejection ports may be provided on both sides of the processing gas ejection port.
  • the relative movement device is a workpiece transfer device
  • the workpiece input device is provided on one side in the workpiece transfer direction
  • the workpiece removal device is provided on the other side
  • the workpiece Regardless of whether the input device and the workpiece removal device are provided on either side of the workpiece conveyance device separated in the workpiece conveyance direction, the workpiece is conveyed in the direction corresponding thereto, Heating and spraying of process gas can be performed.
  • the reaction is accelerated by heating the surface to be processed before and after the processing gas is sprayed, and the plasma is heated. A state close to a state surrounded by gas is obtained, which is desirable.
  • the relative movement device may be configured such that the generating / spouting part holder and the workpiece holder can be relatively moved in two directions intersecting each other on a plane parallel to the workpiece surface of the workpiece. Thereby, for example, a relatively wide surface to be processed can be processed.
  • the processing range performed in the direction perpendicular to the moving direction is smaller than the surface to be processed due to the relative movement in one of the two directions, after the relative movement in one direction, the generation / ejection part holding body and the object holding body are This is because the generation / spouting portion can be positioned on the unprocessed portion of the surface to be processed by relative movement in the other direction, and the unprocessed portion can be processed by relative movement again in one direction.
  • the relative movement device may be configured to move one of the generation / spout unit holding body and the workpiece holding body in two directions, and one of the generation / spout portion holding body and the workpiece holding body in two directions. It is good also as what moves to one side and moves the other to the other of two directions.
  • heating and processing gas can be When spraying, processing can be performed efficiently.
  • the generating / spouting part holder and the workpiece holder are moved in the other direction in the two directions to position the generating / spouting part on the unprocessed part, This is because the processing surface can be heated and the processing gas can be sprayed.
  • the process gas generating / spouting unit and the heated gas generating / spouting unit are configured separately, and may be separately attached to the generating / spouting unit holder, or the processing gas generating / spouting unit and the heated gas generating / The ejection part may be integrally formed.
  • This integral generation / spouting unit may or may not be removable from the generation / spouting unit holder.
  • the plasma processing apparatus includes both the independent opening type processing gas generation / spouting unit and the slit type processing gas generation / spouting unit, each may be integrated with the heated gas generation / spouting unit.
  • the common processing gas generation unit may be configured integrally with the heated gas generation / spouting unit.
  • independent opening type processing gas generation / spouting part and the slit type processing gas generation / spouting part may alternatively be attached to the generation / spouting part holder.
  • both the processing gas generation / ejection sections include the processing gas generation section.
  • the approach / separation device may be a device that allows an operator to manually approach or separate the generation / spout unit holder and the workpiece holder manually or stepwise.
  • the approach / separation device equipped with a drive source includes (1) one that operates in response to manual input, and (2) one that automatically moves the generating / spouting part holder along a preset movement path. And (3) one that automatically operates according to the detection result of the distance detection unit that measures the distance to the surface to be processed. In the mode (3), if the detection value of the distance sensor deviates from the target value or more than the set value, if the approach / separation device is activated, the generating / spouting portion holder is generally along the surface to be processed. It can be moved.
  • the above aspects (2) and (3) are suitable for the independent opening type processing gas generation / spouting part, but may be applied to the slit type processing gas generation / spouting part.
  • the independent opening type jet part and the slit type jet part are detachable with respect to a common process gas generating part easily and quickly.
  • the engagement portion provided on one of the ejection portion and the processing gas generation portion and the engaged portion provided on the other are engaged and disengaged to be attached and detached.
  • the pressure of the processing gas is relatively high, it is necessary to have a structure in which the processing gas does not leak even at that pressure.
  • the heated gas generation / spout section and the processing gas generation / spout section may be inclined with respect to the heated gas generation / spout section as a whole, or only one of the spout sections is tilted. May be.
  • the independent opening type processing gas generating / spouting unit and the slit type processing gas generating / spouting unit share the processing gas generating unit, and the independent opening type spouting unit and the slit type spouting unit are different from the common processing gas generation unit.
  • the alternatively attached feature can be employed in a plasma processing apparatus that does not have a heated gas generation / ejection section.
  • the fin 94 of the heat radiating portion 92 is not cut out. However, a part of the fin 94 is cut out, and the heated air generating / blowing device 16 is disposed in the cutout to generate and blow out the processing gas.
  • the apparatuses 12 and 14 and the heated air generating / blowing apparatus 16 may be brought close to each other.
  • the processing object transport device may be any device that transports the processing object in a direction intersecting the processing gas ejection direction with a distance in the processing gas ejection direction from the processing gas generation / ejection part,
  • a belt conveyor or a chain conveyor can be used instead of the roller conveyor.
  • the present invention can be applied to a low-pressure plasma processing apparatus that performs plasma processing in a low-pressure atmosphere.

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Abstract

This invention purports to enhance the usefulness of a plasma treatment device which, prior to plasma treatment, heats the surface to be treated of an object to be treated. In a treatment gas generation device (70) of an independently gated treatment gas generation/ejection device (12), a treatment gas containing a reactive species generated in the plasma is generated and ejected downwards from an independently gated ejection device (72). Upstream of the treatment gas generation/ejection device (12) in the direction of conveyance of the object to be treated, the heater (150) of a heated air generation/ejection device (16) is provided inclined such that the center-to-center distance of the regions of the surface to be treated of the object to be treated that are reached by the heating air and the treatment gas is shorter than the center-to-center distance between the treatment gas ejection port and the heated air ejection port. Prior to being sprayed with the treatment gas, the surface to be treated is heated by ejection of heated air. Due to the inclination of the heater (150), the center-to-center distance of the regions of the surface to be treated that are reached by the heating air and the treatment gas is shorter, avoiding that the temperature of said surface decreases between being heating and being sprayed with the treatment gas, thus improving the effect of heating on the treatment with a simple device configuration.

Description

プラズマ処理装置Plasma processing equipment
　本発明は、プラズマ処理装置に関するものであり、特に、プラズマ処理に先立って被処理物の被処理面の加熱を行う装置に関する。 The present invention relates to a plasma processing apparatus, and more particularly to an apparatus for heating a surface to be processed of a processing object prior to the plasma processing.
　この種のプラズマ処理装置は、例えば、下記の特許文献１に記載されている。このプラズマ処理装置においては、被処理物の搬送方向においてプラズマ処理ユニットの上流側に加熱ユニットおよび補助ヒータが設けられ、下流側に補助ヒータが設けられている。加熱ユニットは加熱手段により加熱した循環風をフード内に形成して被処理物を加熱するものとされ、補助ヒータは輻射熱により被処理物を加熱するものとされている。被処理物は加熱ユニットにおいて加熱され、さらに補助ヒータにより加熱された後、処理ユニットに送り込まれ、処理ガスが噴き付けられて被処理面に処理が施される。加熱によって被処理面の温度が高くされているため反応速度が速く、処理が良好に行われる。 This type of plasma processing apparatus is described in Patent Document 1 below, for example. In this plasma processing apparatus, a heating unit and an auxiliary heater are provided on the upstream side of the plasma processing unit in the conveyance direction of the workpiece, and an auxiliary heater is provided on the downstream side. The heating unit is configured to heat the workpiece by forming a circulating air heated by a heating means in the hood, and the auxiliary heater is configured to heat the workpiece by radiant heat. The object to be processed is heated in the heating unit, and further heated by the auxiliary heater, and then sent to the processing unit, and a processing gas is sprayed to process the surface to be processed. Since the temperature of the surface to be treated is increased by heating, the reaction rate is fast and the treatment is performed well.
特許第４２５７１８２号公報Japanese Patent No. 4257182
　本発明は以上の事情を背景として為されたものであり、プラズマ処理に先立って被処理物の被処理面の加熱を行うプラズマ処理装置の実用性の向上を課題とする。 The present invention has been made against the background of the above circumstances, and an object of the present invention is to improve the practicality of a plasma processing apparatus that heats a surface to be processed before plasma processing.
　上記の課題は、プラズマ処理装置を、(a)放電空間に供給されるガスを、少なくともプラズマ内に生成された反応種を含む処理ガスとし、その処理ガスを処理ガス噴出口から噴出させる処理ガス生成・噴出部と、(b)ヒータにより加熱した加熱気体を加熱気体噴出口から噴出させる加熱気体生成・噴出部と、(c)それら処理ガス生成・噴出部および加熱気体生成・噴出部を、前記処理ガス噴出口と前記加熱気体噴出口とが一方向に並ぶ状態で保持する生成・噴出部保持体と、(d)前記処理ガスにより被処理面を処理されるべき被処理物を保持する被処理物保持体と、(e)前記処理ガス噴出口および前記加熱気体噴出口が前記被処理物保持体に保持された被処理物の被処理面に対向する状態で、前記生成・噴出部保持体と前記被処理物保持体とを前記処理ガス噴出口と前記加熱気体噴出口との並び方向に、かつ、前記加熱気体噴出口が前記処理ガス噴出口に先行して被処理面に対向することとなる向きに相対移動させる相対移動装置とを含み、加熱気体により加熱した被処理面を処理ガスにより処理する装置とすることにより解決される。
　被処理物は、例えば、金属製，樹脂製，セラミックス製とされ、処理ガスの噴付けにより、例えば、被処理面の改質，洗浄が行われる。改質は、例えば、被処理面の接合強度の向上，親水性あるいは撥水性の向上であり、洗浄は、例えば、減菌，滅菌，有機物等の除去である。
　相対移動装置は、生成・噴出部保持体を移動させる装置としてもよく、被処理物保持体を移動させる装置としてもよく、両方を移動させる装置としてもよい。 The above-described problem is that the plasma processing apparatus uses (a) a gas supplied to the discharge space as a processing gas including at least a reactive species generated in the plasma, and the processing gas is ejected from the processing gas outlet. A generating / spouting section, (b) a heated gas generating / spouting section that spouts the heated gas heated by the heater from the heated gas spout, and (c) the treated gas generating / spouting section and the heated gas generating / spouting section, The generating / spouting part holding body that holds the processing gas jet port and the heated gas jet port aligned in one direction, and (d) holds the workpiece to be processed by the processing gas. A workpiece holding body; and (e) the generating / spouting portion in a state in which the processing gas ejection port and the heated gas ejection port face a surface to be processed of the workpiece held by the workpiece holding body. The holding body and the object to be processed holding body A relative movement device that relatively moves in a direction in which the gas ejection port and the heating gas ejection port are aligned, and in a direction in which the heating gas ejection port faces the processing surface prior to the processing gas ejection port; It is solved by making it the apparatus which processes the to-be-processed surface heated by heated gas with process gas.
The object to be processed is made of, for example, metal, resin, or ceramic, and the surface to be processed is modified and cleaned, for example, by spraying a processing gas. The modification is, for example, improvement of the bonding strength of the surfaces to be treated, hydrophilicity or water repellency, and the cleaning is, for example, sterilization, sterilization, removal of organic substances, or the like.
The relative movement device may be a device that moves the generation / spout part holding body, a device that moves the workpiece holding body, or a device that moves both.
　処理ガス生成・噴出部と加熱気体生成・噴出部とは共に生成・噴出部保持体に保持され、それら両生成・噴出部と被処理物保持体に保持された被処理物とは相対移動装置により、処理ガス噴出口と加熱気体噴出口との並び方向に、かつ、加熱気体噴出口が処理ガス噴出口に先行して被処理面に対向することとなる向きに相対移動させられる。それにより、被処理物の被処理面の各部は、加熱気体の噴付けにより加熱された後に処理ガスの噴付けにより処理されることとなる。処理ガスは勿論、加熱気体も直接被処理面へ噴き付けられるのであり、それによってプラズマ処理装置の構成が簡易化される。また、加熱気体噴出口，処理ガス噴出口および被処理物の存在空間を密閉することが不可欠ではなくなり、そうした場合にはさらに構成の簡易化が可能となる。
　共通の生成・噴出部保持体により保持された処理ガス生成・噴出部と加熱気体生成・噴出部とは互いに近接しており、被処理物の被処理面が処理ガスが噴き付けられる直前に加熱されることが望ましい。そのようにすれば、加熱から処理までの時間が短く、被処理面の温度低下が少なくて済み、加熱による処理向上効果、すなわち反応速度の増大、それによる化学反応の促進効果がより有効に得られる。 The processing gas generation / spouting unit and the heated gas generation / spouting unit are both held by the generation / spouting unit holder, and both the generation / spouting unit and the workpiece to be processed held by the workpiece holder are relative moving devices. Thus, the heated gas jet port is relatively moved in the direction in which the process gas jet port and the heated gas jet port are arranged, and in the direction in which the heated gas jet port faces the surface to be processed before the process gas jet port. Thereby, each part of the to-be-processed surface of a to-be-processed object will be processed by spraying of process gas, after being heated by spraying of heated gas. The processing gas as well as the heating gas is directly sprayed on the surface to be processed, thereby simplifying the configuration of the plasma processing apparatus. In addition, it is not essential to seal the heated gas outlet, the processing gas outlet, and the space to be processed. In such a case, the configuration can be further simplified.
The process gas generation / spout section and the heated gas generation / spout section held by the common generation / spout section holder are close to each other, and the surface to be processed of the object to be processed is heated immediately before the process gas is sprayed. It is desirable that By doing so, the time from heating to treatment is short, the temperature drop of the surface to be treated is small, and the treatment improvement effect by heating, that is, the reaction rate is increased, and the chemical reaction promotion effect is more effectively obtained. It is done.
本発明の一実施形態である大気圧プラズマ処理装置を概略的に示す正面図（一部断面）である。It is a front view (partial cross section) which shows roughly the atmospheric pressure plasma processing apparatus which is one Embodiment of this invention. 上記大気圧プラズマ処理装置の処理ガス生成・噴出装置および加熱空気生成・噴出装置を示す斜視図である。It is a perspective view which shows the process gas production | generation / ejection apparatus and heating air production | generation / ejection apparatus of the said atmospheric pressure plasma processing apparatus. 上記処理ガス生成・噴出装置である独立開口型処理ガス生成・噴出装置および加熱空気生成・噴出装置を示す斜視図である。It is a perspective view which shows the independent opening type | mold process gas production | generation / ejection apparatus and heated air production | generation / ejection apparatus which are the said process gas production | generation / ejection apparatuses. 上記独立開口型処理ガス生成・噴出装置および加熱空気生成・噴出装置を示す正面図である。It is a front view which shows the said independent opening type | mold process gas production | generation / ejection apparatus and heated air production | generation / ejection apparatus. 上記独立開口型処理ガス生成・噴出装置および加熱空気生成・噴出装置を下方から見た状態を示す斜視図である。It is a perspective view which shows the state which looked at the said independent opening type | mold process gas production | generation / ejection apparatus and heated air production | generation / ejection apparatus from the downward direction. 上記処理ガス生成・噴出装置であるスリット型処理ガス生成・噴出装置および加熱空気生成・噴出装置を示す斜視図である。It is a perspective view which shows the slit type | mold process gas production | generation / ejection apparatus and heating air production | generation / ejection apparatus which are the said process gas production | generation / ejection apparatuses. 上記スリット型処理ガス生成・噴出装置および加熱空気生成・噴出装置を下方から見た状態を示す斜視図である。It is a perspective view which shows the state which looked at the said slit type process gas production | generation / ejection apparatus and heated air production | generation / ejection apparatus from the downward direction. 上記大気圧プラズマ処理装置の被処理物を例示する図であり、図８(a-1)，（a-2）は金型、図８(b)は液晶基板、図８(c-1)，（c-2）は金型である。It is a figure which illustrates the to-be-processed object of the said atmospheric pressure plasma processing apparatus, FIG. 8 (a-1), (a-2) is a metal mold | die, FIG.8 (b) is a liquid crystal substrate, FIG.8 (c-1) , (C-2) is a mold. 上記独立開口型処理ガス生成・噴出装置の独立開口と加熱空気生成・噴出装置の加熱空気噴出口との距離を異ならせて処理ガス噴付けを行った場合に得られる距離と被処理面の平均接触角との関係を示すグラフである。Average of distance and surface to be processed when processing gas is sprayed by varying the distance between the independent opening of the above-mentioned independent opening type processing gas generating / blowing device and the heated air outlet of the heated air generating / blowing device It is a graph which shows the relationship with a contact angle. 上記加熱空気生成・噴出装置のヒータの傾きを異ならせて処理ガス噴付けを行った場合に得られるヒータの傾斜角度と被処理面の平均接触角との関係を示すグラフである。It is a graph which shows the relationship between the inclination angle of the heater and the average contact angle of a to-be-processed surface obtained when the inclination of the heater of the said heating air production | generation / spouting apparatus is varied and a process gas spray is performed. 上記加熱空気生成・噴出装置のヒータの傾きを異ならせ、上記独立開口と加熱空気噴出口との距離を一定にして処理ガス噴付けを行った場合に得られるヒータの傾斜角度と被処理面の平均接触角との関係、および処理ガスと加熱空気とが被処理面にそれぞれ到達する両到達領域の中心間距離を一定にして処理ガス噴付けを行った場合に得られるヒータの傾斜角度と被処理面の平均接触角との関係をを示すグラフである。The inclination of the heater of the heated air generating / spouting device is made different, and the inclination angle of the heater and the surface to be processed are obtained when the processing gas is sprayed with the distance between the independent opening and the heated air outlet fixed. The relationship between the average contact angle and the inclination angle of the heater obtained when the processing gas is sprayed at a constant center-to-center distance between the two reaching areas where the processing gas and heated air respectively reach the surface to be processed. It is a graph which shows the relationship with the average contact angle of a process surface. 上記加熱空気生成・噴出装置のヒータの傾きを一定にし、処理ガスと加熱空気とが被処理面にそれぞれ到達する両到達領域の中心間距離を異ならせた場合に得られる中心間距離と被処理面の平均接触角との関係を示すグラフである。The center-to-center distance and processing target obtained when the heater inclination of the heated air generating / spouting device is made constant, and the center-to-center distances of both reaching regions where the processing gas and the heating air reach the processing surface are different. It is a graph which shows the relationship with the average contact angle of a surface. 別の実施形態である大気圧プラズマ処理装置の処理ガス生成・噴出装置および加熱空気生成・噴出装置を概略的に示す正面図（一部断面）である。It is a front view (partial cross section) which shows roughly the process gas production | generation / ejection apparatus and heating air production | generation / ejection apparatus of another atmospheric pressure plasma processing apparatus.
　以下、本発明のいくつかの実施形態を、図を参照しつつ詳しく説明する。なお、本発明は、下記実施形態の他、当業者の知識に基づいて種々の変更を施した態様で実施することができる。 Hereinafter, some embodiments of the present invention will be described in detail with reference to the drawings. In addition, the present invention can be implemented in a mode in which various modifications are made based on the knowledge of those skilled in the art, in addition to the following embodiments.
　図１に、本発明の一実施形態である大気圧プラズマ処理装置（以後、プラズマ処理装置と略称する）が概略的に図示されている。本プラズマ処理装置は、図１に示すように、処理装置本体１０，独立開口型処理ガス生成・噴出装置１２，スリット型処理ガス生成・噴出装置１４（図６参照），加熱空気生成・噴出装置１６，被処理物搬送装置１８，生成・噴出装置昇降装置２０，制御装置２２を含む。本プラズマ処理装置は大気圧雰囲気中に配設され、処理装置本体１０等、プラズマ処理装置の構成要素は大気圧雰囲気中にあり、被処理物の搬送，被処理面の加熱および処理ガスの噴付け等が大気圧雰囲気中において行われる。 FIG. 1 schematically shows an atmospheric pressure plasma processing apparatus (hereinafter abbreviated as a plasma processing apparatus) according to an embodiment of the present invention. As shown in FIG. 1, the present plasma processing apparatus includes a processing apparatus body 10, an independent opening type processing gas generating / blowing device 12, a slit type processing gas generating / blowing device 14 (see FIG. 6), and a heated air generating / blowing device. 16, the to-be-processed object conveying apparatus 18, the production | generation / jet apparatus lifting / lowering apparatus 20, and the control apparatus 22 are included. The present plasma processing apparatus is disposed in an atmospheric pressure atmosphere, and the components of the plasma processing apparatus such as the processing apparatus main body 10 are in an atmospheric pressure atmosphere, and conveys an object to be processed, heats a surface to be processed, and sprays a processing gas. The attachment is performed in an atmospheric pressure atmosphere.
　被処理物搬送装置１８は、本実施形態においてはローラコンベヤ３０により構成されている。ローラコンベヤ３０は、処理装置本体１０に回転可能に設けられた複数のローラ３２を備え、被処理物３４を一方向、本実施形態においては水平な一方向に搬送する。被処理物３４は、被処理物保持体たる位置決め保持部材３６に収容されて搬送される。ローラ３２上には複数の位置決め保持部材３６が被処理物搬送方向において隙間なく一列に並べられ、複数の被処理物３４が連続的に一方向に搬送される。位置決め保持部材３６は、本実施形態においては絶縁材料、例えば、アルミナにより作られている。ローラコンベヤ３０には、その被処理物搬送方向の一方の側から、未処理の被処理物３４が載せられた位置決め保持部材３６が投入され、処理済みの被処理物３４が載せられた位置決め保持部材３６が被処理物搬送方向の他方の側において取り出される。被処理物搬送方向をＸ軸方向、複数のローラ３２により構成される搬送平面であって、水平面な一平面内においてＸ軸方向と直交する方向をＹ軸方向、Ｘ軸方向およびＹ軸方向と直交する方向であって、鉛直方向をＺ軸方向とする。被処理物３４は、本実施形態においてはローラコンベヤ３０への投入側から取出し側へ搬送され、被処理物搬送方向において投入側が上流側、取出側が下流側となる。 The workpiece transfer device 18 is constituted by a roller conveyor 30 in the present embodiment. The roller conveyor 30 includes a plurality of rollers 32 rotatably provided in the processing apparatus main body 10, and conveys the workpiece 34 in one direction, in this embodiment, in one horizontal direction. The workpiece 34 is accommodated in the positioning holding member 36 which is a workpiece holder, and is conveyed. A plurality of positioning and holding members 36 are arranged in a line on the roller 32 without gaps in the workpiece conveyance direction, and the plurality of workpieces 34 are continuously conveyed in one direction. In this embodiment, the positioning holding member 36 is made of an insulating material, for example, alumina. The roller conveyor 30 is loaded with a positioning and holding member 36 on which an unprocessed workpiece 34 is placed from one side in the workpiece conveyance direction, and is positioned and held on which a processed workpiece 34 is placed. The member 36 is taken out on the other side in the workpiece conveyance direction. The workpiece conveyance direction is the X-axis direction, and the conveyance plane is constituted by a plurality of rollers 32, and the directions orthogonal to the X-axis direction in one horizontal plane are the Y-axis direction, the X-axis direction, and the Y-axis direction. The perpendicular direction is the Z-axis direction. In the present embodiment, the workpiece 34 is transported from the loading side to the unloading side to the roller conveyor 30, and the loading side is the upstream side and the unloading side is the downstream side in the workpiece transport direction.
　本プラズマ処理装置においては、被処理物３４として、例えば、図８(a-1)，図８(c-1)に例示する金型３４ａ，３４ｃおよび図８(b)に例示する液晶基板３４ｂが処理される。金型３４ａの凹部３９内には、成形する製品の形状に対応する凹部４１が設けられ、金型３４ａの表面である被処理面３８ａは凹凸を有する。凹部４１は、横断面積は広いが浅いものである。液晶基板３４ｂは平板状を成し、その被処理面３８ｂは一平面状を成す。金型３４ｃの凹部４３内には、成形する製品の形状に対応する凸部４５が設けられ、金型３４ｃの表面である被処理面３８ｃは凹凸を有する。凸部４５は、凹部４１より横断面積が小さいものである。 In this plasma processing apparatus, as the object to be processed 34, for example, molds 34a and 34c illustrated in FIG. 8A-1 and FIG. 8C-1 and a liquid crystal substrate 34b illustrated in FIG. Is processed. A recess 41 corresponding to the shape of the product to be molded is provided in the recess 39 of the mold 34a, and the surface to be processed 38a, which is the surface of the mold 34a, has irregularities. The recess 41 has a large cross-sectional area but is shallow. The liquid crystal substrate 34b has a flat plate shape, and the surface to be processed 38b has a single flat shape. A convex portion 45 corresponding to the shape of the product to be molded is provided in the concave portion 43 of the mold 34c, and the surface to be processed 38c, which is the surface of the mold 34c, has irregularities. The convex portion 45 has a smaller cross-sectional area than the concave portion 41.
　処理装置本体１０には、図１に示すように被処理物搬送装置１８より上方に生成・噴出装置昇降装置２０が設けられている。生成・噴出装置昇降装置２０は、本実施形態においては、可動部材たる昇降部材４０と昇降部材駆動装置４２とを含む。昇降部材駆動装置４２は、駆動源たる電動モータ４４と送りねじ機構４６とを含み、送りねじ機構４６は送りねじ４８およびナット（図示省略）を含む。送りねじ４８が電動モータ４４によって回転させられることにより、昇降部材４０が案内装置５２を構成するガイドレール５４により案内されつつ昇降させられ、Ｚ軸方向において任意の位置へ移動させられ、位置決め保持部材３６に接近，離間させられる。電動モータとしては、回転角度の正確な制御が可能な回転電動モータの一種であるエンコーダ付のサーボモータが好適であり、送りねじとしてはボールねじが好適である。 As shown in FIG. 1, the processing apparatus main body 10 is provided with a generating / blowing apparatus lifting / lowering device 20 above the workpiece transfer apparatus 18. In this embodiment, the generating / spouting device lifting device 20 includes a lifting member 40 that is a movable member and a lifting member driving device 42. The elevating member driving device 42 includes an electric motor 44 as a driving source and a feed screw mechanism 46, and the feed screw mechanism 46 includes a feed screw 48 and a nut (not shown). When the feed screw 48 is rotated by the electric motor 44, the elevating member 40 is moved up and down while being guided by the guide rail 54 constituting the guide device 52, and is moved to an arbitrary position in the Z-axis direction. 36 is approached and separated. As the electric motor, a servo motor with an encoder which is a kind of rotary electric motor capable of accurately controlling the rotation angle is suitable, and a ball screw is suitable as the feed screw.
　昇降部材４０には、独立開口型処理ガス生成・噴出装置１２とスリット型処理ガス生成・噴出装置１４との一方および加熱空気生成・噴出装置１６が搭載される。図１には、独立開口型処理ガス生成・噴出装置１２が搭載された状態が図示されている。 The elevating member 40 is mounted with one of the independent opening type processing gas generation / spout device 12 and the slit type processing gas generation / spout device 14 and the heated air generation / spout device 16. FIG. 1 shows a state where the independent opening type processing gas generation / spouting device 12 is mounted.
　本実施形態においては、独立開口型処理ガス生成・噴出装置１２とスリット型処理ガス生成・噴出装置１４とは、処理ガス生成部たる処理ガス生成装置７０を共通とし、装置コストの増大が抑制される。そして、図３に示すように独立開口型処理ガス生成・噴出装置１２は固有の噴出部であって、独立開口型噴出部たる独立開口型噴出装置７２を含み、図６に示すように、スリット処理ガス生成・噴出装置１４は固有の噴出部であって、スリット型噴出部たるスリット型噴出装置７４を含む。 In the present embodiment, the independent opening type processing gas generation / spouting device 12 and the slit type processing gas generation / spouting device 14 share the processing gas generation device 70 as a processing gas generation unit, thereby suppressing an increase in device cost. The As shown in FIG. 3, the independent opening type processing gas generating / spouting device 12 is a unique jetting part, and includes an independent opening type jetting device 72 that is an independent opening type jetting part, and as shown in FIG. The processing gas generation / spouting device 14 is a unique spouting unit, and includes a slit-type spouting device 74 that is a slit-type spouting unit.
　処理ガス生成装置７０は、その本体である処理ガス生成装置本体８０（図１参照）において昇降部材４０に、固定手段の一種である複数のボルトにより着脱可能に取り付けられている。図３に示すように処理ガス生成装置本体８０内には複数、例えば、２本の電極８４，８６がＺ軸方向に延びる姿勢で、Ｙ軸方向に間隔を隔てて設けられ、それら電極８４，８６の間に放電空間８８が設けられている。放電空間８８には、処理ガス生成装置本体８０の上部に設けられた供給口（図示省略）および処理ガス生成装置本体８０内に設けられた供給通路を経てガスが供給される。ガスは、例えば、窒素およびドライエアを含むガスとされる。 The processing gas generation device 70 is detachably attached to the elevating member 40 by a plurality of bolts which are a kind of fixing means in a processing gas generation device main body 80 (see FIG. 1) which is the main body. As shown in FIG. 3, a plurality of, for example, two electrodes 84 and 86 are provided in the processing gas generation apparatus main body 80 in a posture extending in the Z-axis direction and spaced apart in the Y-axis direction. A discharge space 88 is provided between 86. Gas is supplied to the discharge space 88 through a supply port (not shown) provided in the upper portion of the processing gas generation apparatus main body 80 and a supply passage provided in the processing gas generation apparatus main body 80. The gas is, for example, a gas containing nitrogen and dry air.
　電極８４，８６への電圧の印加により放電空間８８にプラズマが発生させられ、放電空間８８に供給されるガスが、プラズマ内に生成された反応種たる酸素ラジカルを含む処理ガスとされる。プラズマとは、放電、すなわち、絶縁破壊により発生させられるものであり、正イオンおよび負イオン等の荷電粒子、ラジカル等の中性粒子、電子等を含み、全体として、電気的に中性のものをいう。反応種とは、本実施形態においては、励起原子、分子等の電気的に中性な中性粒子をいい、例えば、ラジカル等の反応性の高い励起種等をいう。励起とは、エネルギの低い基底状態からエネルギの高い状態に遷移させることをいい、例えば、放電によって原子や分子が励起させられたり、原子や分子とプラズマ中の荷電粒子とが衝突することによって励起させられたりする。また、放電に起因して励起させられることによって得られた反応種は、プラズマ内で生成された反応種である。ラジカルとは、不対電子を有する化学種をいい、遊離基ともいう。 Plasma is generated in the discharge space 88 by applying a voltage to the electrodes 84 and 86, and the gas supplied to the discharge space 88 is a processing gas containing oxygen radicals as reactive species generated in the plasma. Plasma is generated by electrical discharge, that is, dielectric breakdown, and includes charged particles such as positive ions and negative ions, neutral particles such as radicals, electrons, etc., and is electrically neutral as a whole. Say. In this embodiment, the reactive species refers to electrically neutral neutral particles such as excited atoms and molecules, for example, highly reactive excited species such as radicals. Excitation refers to transition from a low energy ground state to a high energy state. For example, excitation is caused by excitation of atoms or molecules by discharge or collision of charged atoms in plasma with atoms or molecules. Or let me be In addition, the reactive species obtained by being excited due to the discharge are reactive species generated in the plasma. A radical refers to a chemical species having unpaired electrons and is also referred to as a free radical.
　処理ガスは処理ガス流出通路９０によって放電空間８８から流出させられる。処理ガス流出通路９０は、少なくとも１本、例えば複数、本実施形態においては４本、Ｙ軸方向において適宜の間隔を隔てて、本実施形態においては等間隔を隔てて一列に設けられている。各処理ガス流出通路９０は、放電空間８８からＸ軸方向に平行に、被処理物搬送方向において上流側へ延び出させられ、処理ガス生成装置本体８０の外側面に開口させられるとともに、その途中で下方へ鉛直に延び出させられ、処理ガス生成装置本体８０の下面に開口させられている。 The processing gas flows out from the discharge space 88 through the processing gas outflow passage 90. The process gas outflow passages 90 are provided in a line at least one, for example, a plurality, for example, four in the present embodiment, at an appropriate interval in the Y-axis direction, and at an equal interval in the present embodiment. Each processing gas outflow passage 90 extends from the discharge space 88 to the upstream side in the workpiece transfer direction in parallel to the X-axis direction, and is opened to the outer surface of the processing gas generation apparatus main body 80, and in the middle thereof. Are vertically extended downward and are opened on the lower surface of the processing gas generator main body 80.
　処理ガス生成装置本体８０には、処理ガス流出通路９０が開口させられた上記外側面に放熱部９２が設けられ、処理ガス流出通路９０の開口を閉塞している。図２に示すように、放熱部９２は、本実施形態においては、Ｙ軸方向に間隔を隔てて設けられた複数の板状のフィン９４を含む。処理ガス生成装置本体８０にはまた、図４に示すようにアース部材９６が取り付けられ、接地されている。 The processing gas generation device main body 80 is provided with a heat radiating portion 92 on the outer surface where the processing gas outflow passage 90 is opened to close the opening of the processing gas outflow passage 90. As shown in FIG. 2, the heat radiating portion 92 includes a plurality of plate-like fins 94 provided at intervals in the Y-axis direction in the present embodiment. As shown in FIG. 4, a ground member 96 is attached to the processing gas generator main body 80 and is grounded.
　図５に示すように、独立開口型噴出装置７２の本体である独立開口型噴出装置本体１００はブロック状を成し、ボルト１０２によって処理ガス生成装置本体８０の下面に着脱可能に固定される。独立開口型噴出装置７２の取付け，取外しは作業者により行われる。図３に示すように、独立開口型噴出装置本体１００内には接続部１０４および処理ガス流出通路１０６が設けられている。接続部１０４は、独立開口型噴出装置本体１００の上面に開口し、Ｙ軸方向に平行に延びる長手形状の凹部状を成し、独立開口型噴出装置本体１００の被処理物搬送方向において上流側の端部に設けられている。 As shown in FIG. 5, the independent opening type ejecting apparatus main body 100 which is the main body of the independent opening type ejecting apparatus 72 has a block shape and is detachably fixed to the lower surface of the processing gas generating apparatus main body 80 by a bolt 102. Attachment and removal of the independent opening type ejection device 72 is performed by an operator. As shown in FIG. 3, a connection portion 104 and a processing gas outflow passage 106 are provided in the independent opening type ejection device main body 100. The connecting portion 104 opens on the upper surface of the independent opening type ejecting apparatus main body 100, forms a longitudinal concave shape extending in parallel to the Y-axis direction, and is upstream in the workpiece conveying direction of the independent opening type ejecting apparatus main body 100. Is provided at the end.
　処理ガス流出通路１０６は、少なくとも１本、例えば複数、本実施形態においては６本設けられている。これら処理ガス流出通路１０６は、Ｙ軸方向に適宜の間隔を隔てて、本実施形態においては等間隔に一列に設けられ、図４に示すように接続部１０４のＸ軸方向において被処理物搬送方向の上流側の部分からＺ軸方向において下向きに延び出させられ、独立開口型噴出装置本体１００の下面に開口させられている。これらの開口は互いに独立した処理ガス噴出口たる独立開口１０８を構成し、図３に示すように６個の独立開口１０８がＹ軸方向に平行な一直線上に等間隔を隔てて並び、独立開口列１１０を構成している。本実施形態においては、独立開口１０８の直径は１．２ｍｍとされ、６個の独立開口１０８の形成ピッチ（隣接する２個の独立開口１０８の中心間距離）は４ｍｍとされている。 The processing gas outflow passage 106 is provided with at least one, for example, a plurality, for example, six in this embodiment. These processing gas outflow passages 106 are provided in a line at equal intervals in the Y-axis direction in the present embodiment, and are conveyed in the X-axis direction of the connecting portion 104 as shown in FIG. Is extended downward in the Z-axis direction from a portion on the upstream side in the direction, and is opened on the lower surface of the independent opening type ejecting apparatus main body 100. These openings constitute independent openings 108 which are independent processing gas jets, and as shown in FIG. 3, six independent openings 108 are arranged at equal intervals on a straight line parallel to the Y-axis direction. A column 110 is configured. In the present embodiment, the diameter of the independent openings 108 is 1.2 mm, and the formation pitch of the six independent openings 108 (the distance between the centers of the two adjacent independent openings 108) is 4 mm.
　図３に示すように独立開口型噴出装置７２が処理ガス生成装置本体８０に固定された状態では、４本の処理ガス流出通路９０の全部が接続部１０４の被処理物搬送方向において下流側の部分に開口する状態となる。処理ガスは処理ガス流出通路９０，接続部１０４および処理ガス流出通路１０６を通り、６個の独立開口１０８から鉛直方向において下方へ噴出され、図４に示すように、独立開口型噴出装置７２の被処理物搬送方向において上流側の部分から噴出される。 As shown in FIG. 3, in the state where the independent opening type ejection device 72 is fixed to the processing gas generation device main body 80, all of the four processing gas outflow passages 90 are downstream of the connection portion 104 in the workpiece conveyance direction. It will be in the state opened to a part. The processing gas passes through the processing gas outflow passage 90, the connection portion 104, and the processing gas outflow passage 106, and is jetted downward in the vertical direction from the six independent openings 108. As shown in FIG. It is ejected from the upstream portion in the workpiece conveyance direction.
　図７に示すように、スリット型噴出装置７４の本体であるスリット型噴出装置本体１２０は、本実施形態においては、複数、例えば２つの本体構成部材１２２，１２４が一体的に組み付けられて成り、図６に示すように、接続部１３０およびスリット状通路１３２が形成されている。接続部１３０は、スリット型噴出装置本体１２０の上面に開口し、Ｙ軸方向に延びる長手形状の凹部状を成す。スリット状通路１３２は、Ｙ軸方向に長く、上端が接続部１３０の、被処理物搬送方向において上流側の端部に開口し、下端がスリット型噴出装置本体１２０の下面の、被処理物搬送方向において上流側の端部に開口させられている。スリット状通路１３２の下面開口が、Ｙ軸方向に平行な一直線に沿って延びる処理ガス噴出口たるスリット状開口１４４を構成している。 As shown in FIG. 7, in the present embodiment, the slit-type ejection device main body 120 that is the main body of the slit-type ejection device 74 is formed by integrally assembling a plurality of, for example, two main body constituent members 122 and 124. As shown in FIG. 6, the connection part 130 and the slit-shaped channel | path 132 are formed. The connection part 130 is opened in the upper surface of the slit-type ejection apparatus main body 120, and comprises the longitudinal recessed part shape extended in a Y-axis direction. The slit-shaped passage 132 is long in the Y-axis direction, has an upper end that opens to an end on the upstream side in the workpiece conveyance direction of the connection portion 130, and a lower end that conveys the workpiece on the lower surface of the slit-type ejection device main body 120. In the direction, it is opened at the upstream end. The lower surface opening of the slit-shaped passage 132 constitutes a slit-shaped opening 144 serving as a processing gas ejection port extending along a straight line parallel to the Y-axis direction.
　スリット型噴出装置本体１２０は独立開口型噴出装置本体１００と同じ形状，寸法を有し、接続部１３０は接続部１０４と同じ形状，寸法を有し、スリット型噴出装置本体１２０に、接続部１０４の独立開口型噴出装置本体１００に対する位置と同じ位置に形成されている。また、本実施形態においては、スリット状開口１４４の開口面積は、６個の独立開口１０８の各開口面積の和より大きくされている。スリット型噴出装置本体１２０は処理ガス生成装置本体８０の下面にボルト１０２により、独立開口型噴出装置本体１００と同じ位置に固定される。スリット型噴出装置７２の取付け，取外しは、作業者により行われる。スリット型噴出装置本体１２０の固定により４本の処理ガス流出通路９０は接続部１３０に連通させられ、処理ガスはスリット状通路１３２を通ってスリット状開口１４４から下方（鉛直方向真下）へ、Ｙ軸方向に延びる帯状に噴出される。 The slit-type ejection device body 120 has the same shape and dimensions as the independent opening-type ejection device body 100, and the connection portion 130 has the same shape and dimensions as the connection portion 104, and the connection portion 104 is connected to the slit-type ejection device body 120. Are formed at the same position as the position relative to the independent opening type ejecting apparatus main body 100. In the present embodiment, the opening area of the slit-shaped opening 144 is larger than the sum of the opening areas of the six independent openings 108. The slit type jet device main body 120 is fixed to the lower surface of the processing gas generating device main body 80 at the same position as the independent opening type jet device main body 100 by bolts 102. Attachment and removal of the slit-type ejection device 72 is performed by an operator. By fixing the slit-type ejection device main body 120, the four processing gas outflow passages 90 are communicated with the connecting portion 130, and the processing gas passes through the slit-like passage 132 downward from the slit-like opening 144 (below the vertical direction). It is ejected in a strip shape extending in the axial direction.
　図４は、独立開口型噴出装置７２が処理ガス生成装置７０に取り付けられた状態を正面から見た状態を示す図であるが、独立開口型噴出装置７２，スリット型噴出装置７４を処理ガス生成装置７０に取り付けた状態において、処理ガス生成装置７０に対する接続部１０４および独立開口列１１０の位置と接続部１３０およびスリット状開口１４４の位置とは同じであり、両方の符号を付して示すこととする。独立開口型噴出装置本体１００およびスリット型噴出装置本体１２０は、処理ガス生成装置本体１００にボルト１０２によって固定されることにより、処理ガス生成装置本体１００の下面に密着させられ、それらの間からの処理ガスの漏れが防止される。 FIG. 4 is a diagram showing a state in which the independent opening type ejection device 72 is attached to the processing gas generation device 70 as viewed from the front, and the independent opening type ejection device 72 and the slit type ejection device 74 are treated with the process gas generation. In the state of being attached to the apparatus 70, the positions of the connecting portion 104 and the independent opening row 110 with respect to the processing gas generating apparatus 70 are the same as the positions of the connecting portion 130 and the slit-shaped opening 144, and both are denoted by the same reference numerals. And The independent opening type jet apparatus main body 100 and the slit type jet apparatus main body 120 are brought into close contact with the lower surface of the process gas generating apparatus main body 100 by being fixed to the process gas generating apparatus main body 100 by the bolts 102, and from between them. Process gas leakage is prevented.
　独立開口型噴出装置７２とスリット型噴出装置７４とは択一的に処理ガス生成装置７０に取り付けられ、処理ガス生成装置７０への独立開口型噴出装置７２の取付けにより、独立開口型処理ガス生成・噴出部たる独立開口型処理ガス生成・噴出装置１２が構成され、スリット型噴出装置７４の取付けにより、スリット型処理ガス生成・噴出部たるスリット型処理ガス生成・噴出装置１４が構成される。取付状態において独立開口１０８とスリット状開口１４４とのＺ軸方向における位置は同じになる。 The independent opening type jetting device 72 and the slit type jetting device 74 are alternatively attached to the processing gas generation device 70, and the independent opening type processing gas generation is achieved by mounting the independent opening type jetting device 72 to the processing gas generation device 70. The independent opening type processing gas generation / spouting device 12 as the ejection portion is configured, and the slit type processing gas generation / spouting device 14 as the slit type processing gas generation / spouting portion is configured by mounting the slit type spraying device 74. In the attached state, the positions of the independent opening 108 and the slit-shaped opening 144 in the Z-axis direction are the same.
　図２に示すように加熱空気生成・噴出装置１６はヒータ１５０を備え、加熱気体たる空気を加熱して噴出する。ヒータ１５０は、ブラケット１５２，１５４，１５６により処理ガス生成装置本体８０の、被処理物搬送方向において上流側の外側面に着脱可能に固定されている。ヒータ１５０は、コイル状の発熱体が管、例えば、石英管に収容されて長手形状を成す発熱部１６０を有し、発熱部１６０の長手方向の一端部である下端部に加熱空気噴出部１６２が設けられている。図５に示すように加熱空気噴出部１６２は扁平な板状とされており、その厚さ（Ｘ軸方向に沿う方向の寸法）は、発熱部１６０の外径より小さくされている。加熱空気噴出部１６２の内部に設けられたスリット状の通路１６４は、発熱部１６０に連通させられるとともに、加熱空気噴出部１６２の下面に開口させられている。この開口が加熱空気噴出口１６６を構成し、加熱空気が下方へ噴出される。加熱空気噴出口１６６はＹ軸方向に長く、Ｙ軸方向において、独立開口型噴出装置７２およびスリット型噴出装置７４によりそれぞれ噴出される処理ガスの被処理面への到達領域全体を加熱することができる長さを有するものとされている。 As shown in FIG. 2, the heated air generator / spout device 16 includes a heater 150, and heats and blows out air as a heated gas. The heater 150 is detachably fixed to the outer surface on the upstream side of the processing gas generation apparatus main body 80 in the workpiece conveyance direction by brackets 152, 154 and 156. The heater 150 has a heat generating part 160 in which a coil-shaped heating element is accommodated in a tube, for example, a quartz tube, and has a longitudinal shape. A heating air ejection part 162 is provided at a lower end portion which is one end in the longitudinal direction of the heat generating part 160. Is provided. As shown in FIG. 5, the heated air ejection portion 162 has a flat plate shape, and its thickness (the dimension in the direction along the X-axis direction) is smaller than the outer diameter of the heat generating portion 160. A slit-shaped passage 164 provided inside the heated air ejection section 162 is communicated with the heat generating section 160 and is opened on the lower surface of the heated air ejection section 162. This opening constitutes a heated air outlet 166, and the heated air is jetted downward. The heated air ejection port 166 is long in the Y-axis direction, and in the Y-axis direction, the entire region where the process gas ejected by the independent opening type ejection device 72 and the slit-type ejection device 74 reaches the surface to be treated can be heated. It is supposed to have a possible length.
　ヒータ１５０は、図２に示すように発熱部１６０の上端部をホルダ１６８により保持され、処理ガス生成装置本体８０にボルト（図示省略）によって着脱可能に固定されたブラケット１５２によりホルダ１６８が保持される。図示は省略するが、ホルダ１６８から発熱部１６０内に電源線（図示省略）が挿入され、コイルに電圧が印加される。ヒータ１５０はまた、その長手方向の中間部において、ボルトにより処理ガス生成装置本体８０に着脱可能に固定されたブラケット１５４，１５６によって保持されている。なお、ヒータ１５０は、カバー１７０，１７２により覆われている。カバー１７０，１７２はボルトによって処理ガス生成装置本体８０に固定され、着脱可能である。 As shown in FIG. 2, the heater 150 has the upper end of the heat generating part 160 held by a holder 168, and the holder 168 is held by a bracket 152 that is detachably fixed to the processing gas generator main body 80 by bolts (not shown). The Although illustration is omitted, a power line (not shown) is inserted from the holder 168 into the heat generating portion 160, and a voltage is applied to the coil. The heater 150 is also held by brackets 154 and 156 that are detachably fixed to the processing gas generating apparatus main body 80 by bolts in the middle portion in the longitudinal direction. The heater 150 is covered with covers 170 and 172. The covers 170 and 172 are fixed to the processing gas generation apparatus main body 80 by bolts and are detachable.
　ヒータ１５０は、作業者によるブラケット１５２，１５４，１５６の処理ガス生成装置本体８０に対する取付け，取外しにより処理ガス生成装置本体８０に取付け，取外しされる。加熱空気生成・噴出装置１６は、処理ガス生成・噴出装置１２，１４とは別体に構成され、互いに分離可能であるのであり、処理ガス生成・噴出装置１２あるいは１４を介して昇降部材４０に着脱可能に、独立開口１０８あるいはスリット状開口１４４と加熱空気噴出口１６６とが、被処理物搬送方向に平行な一方向に並ぶ状態で保持され、処理ガス生成・噴出装置１２あるいは１４と一体的に被処理物３４に接近，離間させられる。本実施形態においては昇降部材４０が生成・噴出部保持体を構成し、生成・噴出装置昇降装置２０が接近・離間装置を構成している。昇降部材４０と生成・噴出部保持体とが一体的に設けられていると考えることもできる。 The heater 150 is attached to and detached from the processing gas generation device main body 80 by attaching and detaching the brackets 152, 154, and 156 to the processing gas generation device main body 80 by an operator. The heated air generating / blowing device 16 is configured separately from the processing gas generating / blowing devices 12 and 14 and is separable from each other, and is connected to the elevating member 40 via the processing gas generating / blowing device 12 or 14. The independent opening 108 or the slit-shaped opening 144 and the heated air outlet 166 are detachably held in a state aligned in one direction parallel to the workpiece conveyance direction, and are integrated with the processing gas generation / ejection device 12 or 14. The workpiece 34 is moved closer to and away from the workpiece 34. In the present embodiment, the elevating member 40 constitutes a generation / ejection part holder, and the production / ejection device elevating device 20 constitutes an approach / separation device. It can also be considered that the elevating member 40 and the generation / spout part holding body are integrally provided.
　図２に示すように、ヒータ１５０は、その全体が処理ガス生成・噴出装置１２（スリット型噴出装置７４が処理ガス生成装置７０に取り付けられた状態では処理ガス生成・噴出装置１４）に対して傾斜した姿勢で取り付けられている。鉛直な処理ガス噴出方向に対して、加熱空気噴出方向が傾斜させられているのであり、図４に示すように、独立開口１０８あるいはスリット状開口１４４と加熱空気噴出口１６６とのＺ軸方向の位置が同じにされるとともに、加熱空気噴出口１６６からの加熱空気の噴出方向と、開口１０８，１４４からの処理ガスの噴出方向とが、開口１０８，１４４と加熱空気噴出口１６６との中心間距離（以後、場合によって、処理ガス・加熱空気噴出口中心間距離と称する。）Ｘより、処理ガスと加熱空気とが被処理物３４の被処理面３８にそれぞれ到達する両到達領域の中心間距離（以後、場合によって、到達領域中心間距離と称する。）Ｘ´が小さくなる向きに互いに交差させられている。なお、「到達領域の中心」は、独立開口列１１０の中心あるいはスリット状開口１４４の中心や、加熱空気噴出口１６６の中心から、各噴出方向に平行に延びる直線と被処理面３８との交点とする。加熱空気噴出方向の処理ガス噴出方向に対する傾斜角度は、本実施形態においては、上記のように中心間距離Ｘより中心間距離Ｘ´が小さくなる向きの傾斜を負として規定される。 As shown in FIG. 2, the heater 150 as a whole is compared with the processing gas generation / ejection device 12 (the processing gas generation / ejection device 14 when the slit type ejection device 74 is attached to the processing gas generation device 70). Mounted in an inclined position. The heating air ejection direction is inclined with respect to the vertical processing gas ejection direction. As shown in FIG. 4, the Z-axis direction between the independent opening 108 or the slit-shaped opening 144 and the heating air ejection port 166 is used. The positions are the same, and the ejection direction of the heated air from the heated air outlet 166 and the ejection direction of the processing gas from the openings 108 and 144 are between the centers of the openings 108 and 144 and the heated air outlet 166. From the distance (hereinafter, referred to as the distance between the center of the processing gas and heated air outlet), the distance between the centers of the two reaching regions where the processing gas and the heated air reach the processing surface 38 of the workpiece 34 respectively. The distances (hereinafter, referred to as distances between the centers of the reaching regions) are crossed with each other in a direction in which the X ′ becomes smaller. The “center of the reaching region” is an intersection of a straight line extending in parallel to each ejection direction from the center of the independent opening row 110 or the center of the slit-shaped opening 144 or the center of the heated air outlet 166 and the surface to be processed 38. And In the present embodiment, the inclination angle of the heated air ejection direction with respect to the processing gas ejection direction is defined as a negative inclination in which the center distance X ′ is smaller than the center distance X as described above.
　このように加熱空気噴出方向が処理ガス噴出方向に対して傾斜させられることが望ましい。加熱空気生成・噴出装置に比較して処理ガス生成・噴出装置の方が構造が複雑であり、加熱空気噴出方向を傾斜させる方が容易であり、また、処理ガスは被処理面に対して直角な方向から噴き付けた方が、斜めから噴き付けるよりも片寄りなく噴き付けることができるからである。 Thus, it is desirable that the heated air ejection direction be inclined with respect to the processing gas ejection direction. Compared to the heated air generator / spouter, the process gas generator / spouter has a more complicated structure, and it is easier to tilt the heated air jet direction, and the processing gas is perpendicular to the surface to be processed. This is because spraying from any direction can spray more smoothly than spraying from an oblique direction.
　上記処理装置本体１０，処理ガス生成・噴出装置１２，１４，加熱空気生成・噴出装置１６，被処理物搬送装置１８，生成・噴出装置昇降装置２０等は、図１に示すようにハウジング１７４により覆われ、処理時に発生する騒音の漏れや、処理中における作業者と被処理物や装置との接触等が防止されている。本プラズマ処理装置において被処理物の加熱，処理ガスの噴付けは大気圧雰囲気中で行われるため、ハウジング１７４は、処理が低圧雰囲気中で行われる場合のように気密な空間を形成するものとしなくてよく、プラズマ処理装置の構成、特にハウジング１７４の構成が簡単になるとともに、被処理物の搬入，搬出が容易となる。 The processing apparatus main body 10, the processing gas generation / spouting devices 12, 14, the heated air generation / spouting device 16, the workpiece transfer device 18, the generation / spouting device lifting / lowering device 20 and the like are provided by a housing 174 as shown in FIG. Covering and preventing leakage of noise generated during processing and contact between an operator and an object to be processed or an apparatus during processing are prevented. In the present plasma processing apparatus, the object to be processed and the spraying of the processing gas are performed in an atmospheric pressure atmosphere. Therefore, the housing 174 forms an airtight space as in the case where the processing is performed in a low pressure atmosphere. The configuration of the plasma processing apparatus, particularly the configuration of the housing 174, can be simplified, and the workpiece can be easily carried in and out.
　前記制御装置２２はコンピュータを主体として構成され、駆動回路を介してローラコンベヤ３０，電動モータ４４，処理ガス生成装置７０，ヒータ１５０等を制御する。図１に示すように、コンピュータには電動モータ４４に設けられた回転量検出装置たるエンコーダ１８０および距離センサ１８２が接続されている。距離センサ１８２は、処理装置本体１０の被処理物搬送方向において昇降部材４０の上流側であって、加熱空気生成・噴出装置１６の上流側に設けられ、被処理物３４の被処理面３８までの距離を検出する。本実施形態においては、距離センサ１８２は、例えば、レーザ変位センサにより構成されている。レーザ変位センサは、レーザビーム発生器が発生するレーザビームを投光光学系により集光して被処理面３８に照射し、その反射光を受光光学系により半導体位置検出素子上に集光し、反射光集光位置をアナログ演算回路において演算するように構成されたものである。被処理面３８の高さ方向の位置によって半導体位置検出素子上の集光位置が変わることから、その集光位置の演算により距離センサ１８２と被処理面３８との間の距離が得られる。本実施形態においては、距離センサ１８２が距離検出部を構成している。 The control device 22 is mainly composed of a computer, and controls the roller conveyor 30, the electric motor 44, the processing gas generation device 70, the heater 150 and the like through a drive circuit. As shown in FIG. 1, an encoder 180 and a distance sensor 182, which are rotation amount detection devices provided in the electric motor 44, are connected to the computer. The distance sensor 182 is provided on the upstream side of the elevating member 40 in the workpiece conveyance direction of the processing apparatus main body 10 and on the upstream side of the heated air generating / blowing device 16, and to the processing surface 38 of the workpiece 34. Detect the distance. In the present embodiment, the distance sensor 182 is constituted by, for example, a laser displacement sensor. The laser displacement sensor condenses the laser beam generated by the laser beam generator by the light projecting optical system and irradiates the processing surface 38, and condenses the reflected light on the semiconductor position detecting element by the light receiving optical system, The reflected light condensing position is calculated by an analog arithmetic circuit. Since the condensing position on the semiconductor position detecting element changes depending on the position of the processing surface 38 in the height direction, the distance between the distance sensor 182 and the processing surface 38 is obtained by calculating the condensing position. In the present embodiment, the distance sensor 182 constitutes a distance detection unit.
　以上のように構成されたプラズマ処理装置においては、被処理物３４が搬送されつつ、被処理面３８の加熱および処理ガスの噴付けが行われる。独立開口型処理ガス生成・噴出装置１２あるいはスリット型処理ガス生成・噴出装置１４および加熱空気生成・噴出装置１６は、ローラコンベヤ３０により搬送される被処理物３４の上方に位置し、被処理物搬送方向において処理ガス生成・噴出装置１２，１４の上流側に設けられた加熱空気生成・噴出装置１６の加熱空気噴出口１６６は、独立開口１０８あるいはスリット状開口１４４に先行して被処理面３８に対向し、処理ガスの噴付けに先立って被処理面３８を加熱する。それにより、処理ガスの噴付けによる処理、例えば、被処理面３８の汚れの除去や親水性の向上処理の効果が高められる。 In the plasma processing apparatus configured as described above, the surface to be processed 38 is heated and the processing gas is sprayed while the object 34 is being conveyed. The independent opening type processing gas generation / spouting device 12 or the slit type processing gas generation / spouting device 14 and the heated air generation / spouting device 16 are positioned above the processing target 34 conveyed by the roller conveyor 30 and are processed. A heated air outlet 166 of the heated air generating / blowing device 16 provided on the upstream side of the processing gas generating / blowing devices 12, 14 in the transport direction precedes the independent opening 108 or the slit-shaped opening 144 and the surface to be treated 38. The surface to be processed 38 is heated prior to the spraying of the processing gas. Thereby, the effect of the treatment by spraying the treatment gas, for example, the removal of the dirt on the surface to be treated 38 or the hydrophilic improvement treatment is enhanced.
　処理ガスの噴付けには、独立開口型噴出装置７２とスリット型噴出装置７４とが択一的に使用される。放電空間８８において発生させられた処理ガスは、独立開口型噴出装置７２においては、６本の処理ガス流出通路１０６を通り、６個の独立開口１０８からそれぞれ棒状に噴出させられ、スリット型噴出装置７４においてはスリット状通路１３２を通り、スリット状開口１４４から帯状に噴出させられる。そして、噴出装置７２，７４において処理ガスの毎分の使用量は同じにされ、独立開口１０８から噴出されるプラズマの方が、スリット状開口１４４から噴出されるプラズマより遠くまで届き、プラズマ到達可能距離が長い。プラズマ到達可能距離は実験により取得され、現実に、独立開口１０８の方が噴出されるプラズマの到達可能距離が長い。その理由は、前述のように、本実施形態においてはスリット状開口１４４の開口面積が６個の独立開口１０８の各開口面積の和より大きくされているため、開口１０８，１４４から噴出する処理ガスの流速が独立開口１０８の方がスリット状開口１４４より速く、遠くへ飛ぶことによると推定される。 The independent opening type jet device 72 and the slit type jet device 74 are alternatively used for spraying the processing gas. The processing gas generated in the discharge space 88 passes through the six processing gas outflow passages 106 in the independent opening type ejection device 72 and is ejected in the form of a rod from each of the six independent openings 108, and the slit type ejection device. In 74, it passes through the slit-shaped passage 132 and is ejected from the slit-shaped opening 144 in a band shape. Then, the amount of processing gas used per minute in the ejection devices 72 and 74 is the same, and the plasma ejected from the independent opening 108 reaches farther than the plasma ejected from the slit-shaped opening 144 and can reach the plasma. The distance is long. The plasma reachable distance is obtained by experiment, and actually the reachable distance of the plasma ejected from the independent opening 108 is longer. The reason for this is that, as described above, in this embodiment, the opening area of the slit-shaped opening 144 is larger than the sum of the opening areas of the six independent openings 108, so that the processing gas ejected from the openings 108 and 144 is used. It is presumed that the flow velocity of the independent aperture 108 is faster than the slit-shaped aperture 144 and is far away.
　プラズマ到達可能距離を取得する実験は、被処理物としてガラス板を使用し、ガラス板の一平面状の表面である被処理面に処理ガスを噴き付け、処理効果を測定することにより行われる。処理効果は、例えば、ガラス板表面の複数個所に水滴を垂らし、各水滴の接触角を接触角計（例えば、協和界面科学株式会社製）により測定し、それらの平均値を求め、濡れ性（親水性）を検出することにより取得する。独立開口型噴出装置７２とスリット型噴出装置７４との各々について、開口１０８，１４４と被処理面との間の距離（以後、場合によって処理ガス噴出口・被処理面間距離と称する）を複数種類に異ならせ、ガラス板を搬送しつつ処理ガスを噴き付けて処理効果を測定し、設定値以下の平均接触角が得られる場合の処理ガス噴出口・被処理面間距離のうちの最大距離をプラズマ到達可能距離とする。また、搬送速度を複数種類に異ならせ、各速度毎にプラズマ到達可能距離を取得する。 The experiment for obtaining the plasma reachable distance is performed by using a glass plate as an object to be processed, spraying a processing gas on a surface to be processed which is a flat surface of the glass plate, and measuring the processing effect. The treatment effect is, for example, by dropping water droplets at a plurality of locations on the surface of the glass plate, measuring the contact angle of each water droplet with a contact angle meter (for example, manufactured by Kyowa Interface Science Co., Ltd.), obtaining the average value thereof, It is obtained by detecting (hydrophilicity). For each of the independent opening type ejection device 72 and the slit type ejection device 74, a plurality of distances between the openings 108 and 144 and the surface to be processed (hereinafter, referred to as a distance between the processing gas ejection port and the surface to be processed). Depending on the type, measure the treatment effect by spraying the treatment gas while conveying the glass plate, and when the average contact angle below the set value is obtained, the maximum distance between the treatment gas outlet and the surface to be treated Is the plasma reachable distance. In addition, the transport speed is varied among a plurality of types, and the plasma reachable distance is acquired for each speed.
　その結果、ガラス板の搬送速度の大きさに関係なく、独立開口型噴出装置７２についてスリット型噴出装置７４より長いプラズマ到達可能距離が得られた。また、独立開口型噴出装置７２でもスリット型噴出装置７４でも、被処理物の搬送速度を遅くした方が長いプラズマ到達可能距離が得られた。さらに、独立開口型噴出装置７２により処理ガスを噴き付けるのに先立ってヒータ１５０により被処理面を加熱したところ、加熱を行わない場合より長いプラズマ到達可能距離が得られ、非加熱時と同じプラズマ到達可能距離であれば、被処理物搬送速度を速くすることができる結果が得られた。 As a result, a longer plasma reachable distance was obtained for the independent opening type jetting device 72 than for the slit type jetting device 74, regardless of the magnitude of the conveying speed of the glass plate. Further, in both the independent opening type jetting device 72 and the slit type jetting device 74, a longer plasma reachable distance was obtained by lowering the conveying speed of the workpiece. Further, when the surface to be processed is heated by the heater 150 prior to spraying the processing gas by the independent opening type ejection device 72, a longer plasma reachable distance is obtained than when no heating is performed, and the same plasma as that at the time of non-heating is obtained. If the reachable distance, the result that the workpiece conveyance speed can be increased was obtained.
　したがって、被処理面が凹凸を有する被処理物の処理には独立開口型噴出装置７２が適しており、本実施形態においては金型３４ａ，３４ｃの処理には独立開口型噴出装置７２が使用される。被処理面に凹凸があり、処理ガス噴出口・被処理面間距離が一定でない場合、プラズマ到達可能距離が短ければ、被処理面に処理ガスが届かない部分が生じるのに対し、プラズマ到達可能距離が長ければ、処理ガス噴出口・被処理面間距離の差の影響が緩和され、処理ガスを噴き付けることができるからである。また、搬送速度を抑えつつ、被処理面３８ａの加熱が行われてプラズマ到達可能距離が長くされ、凹凸による処理ガス噴出口・被処理面間距離の違いに確実に対応し得るようにされる。さらに、処理ガス噴出口・被処理面間距離が長いため、６個の独立開口１０８の各々から噴出される処理ガス中のプラズマが拡散により、被処理面近傍において交わり、独立開口１０８の並び方向において被処理面にほぼ均一な帯状に噴き付けられる。 Therefore, the independent opening type jetting device 72 is suitable for the treatment of the workpiece having the uneven surface, and in this embodiment, the independent opening type jetting device 72 is used for the processing of the molds 34a and 34c. The If the surface to be processed has irregularities and the distance between the processing gas outlet and the surface to be processed is not constant, if the plasma reachable distance is short, there will be a portion where the processing gas does not reach the surface to be processed. This is because if the distance is long, the influence of the difference between the distance between the processing gas outlet and the surface to be processed is reduced, and the processing gas can be sprayed. In addition, while the conveyance speed is suppressed, the surface to be processed 38a is heated to increase the plasma reachable distance, so that it is possible to reliably cope with the difference in the distance between the processing gas ejection port and the surface to be processed due to unevenness. . Further, since the distance between the processing gas ejection port and the surface to be processed is long, the plasma in the processing gas ejected from each of the six independent openings 108 intersects in the vicinity of the surface to be processed due to diffusion, and the arrangement direction of the independent openings 108 Are sprayed on the surface to be processed in a substantially uniform band shape.
　それに対し、被処理面が凹凸のない一平面状を成すのであれば、プラズマ到達可能距離は長くなくてよく、本実施形態においては液晶基板３４ｂの処理にはスリット型噴出装置７４が使用される。この際、被処理面３８ｂの加熱は行われない。凹凸による処理ガス噴出口・被処理面間距離の変化に対応しなくてよく、加熱によりプラズマ到達可能距離を延ばさなくてよいからである。スリット型噴出装置７４によれば、処理ガスが被処理面３８ｂに帯状に噴き付けられ、スリット状開口１４４の長手方向において均一に処理ガスが噴き付けられる。 On the other hand, if the surface to be processed has a flat surface without unevenness, the plasma reachable distance does not have to be long, and in this embodiment, the slit type ejection device 74 is used for processing the liquid crystal substrate 34b. . At this time, the surface to be processed 38b is not heated. This is because it is not necessary to cope with a change in the distance between the processing gas ejection port and the surface to be processed due to the unevenness, and it is not necessary to extend the plasma reachable distance by heating. According to the slit type ejection device 74, the processing gas is sprayed in a band shape on the surface to be processed 38 b, and the processing gas is sprayed uniformly in the longitudinal direction of the slit-shaped opening 144.
　前記ヒータ１５０により被処理面を加熱するに当たり、その噴出方向の傾斜角度θ，処理ガス・加熱空気噴出口中心間距離Ｘおよび到達領域中心間距離Ｘ´は、予め実験により得られたデータに基づいて設定されている。実験は、被処理物としてガラス板を使用し、処理ガス噴出装置として独立開口型噴出装置７２を使用し、処理ガス噴出口・被処理面間距離Ｚは、実験により取得した複数種類のプラズマ到達可能距離のうち最大の距離とし、その最大プラズマ到達可能距離が得られる際の搬送速度によりガラス板を搬送して行った。また、加熱空気噴出口１６６から噴出される加熱空気の流量は、独立開口１０８から噴出される処理ガスの流量より少なくした。 When the surface to be treated is heated by the heater 150, the inclination angle θ in the ejection direction, the distance X between the center of the processing gas / heated air outlet and the distance X ′ between the centers of the reaching regions are based on data obtained in advance by experiments. Is set. In the experiment, a glass plate is used as the object to be treated, and an independent opening type ejection device 72 is used as the processing gas ejection device, and the distance Z between the processing gas ejection port and the surface to be processed is a plurality of kinds of plasma arrivals obtained by the experiment. The maximum distance among the possible distances was used, and the glass plate was transported at the transport speed when the maximum plasma reachable distance was obtained. Further, the flow rate of the heated air ejected from the heated air ejection port 166 was made smaller than the flow rate of the processing gas ejected from the independent opening 108.
　そして、まず、ヒータ１５０を傾けず、処理ガス噴出方向および加熱空気噴出方向がいずれも鉛直方向において下向きとなる状態で、処理ガス・加熱空気噴出口中心間距離Ｘを複数種類に異ならせ、それぞれガラス板の被処理面を加熱した後、処理ガスを噴き付け、処理効果を測定した。その結果を図９のグラフに示す。 First, the heater 150 is not tilted, and the process gas ejection direction and the heated air ejection direction are both downward in the vertical direction, and the center distance X between the process gas and heated air ejection outlets is made different into a plurality of types. After heating the to-be-processed surface of the glass plate, the processing gas was sprayed and the processing effect was measured. The result is shown in the graph of FIG.
　図９のグラフから明らかなように、処理ガス・加熱空気噴出口中心間距離Ｘを限界値、すなわち独立開口型処理ガス生成・噴出装置１２全体と加熱空気生成・噴出装置１６（ヒータ１５０）全体とを、鉛直な姿勢で、それらの装置構成上、最も近づけ得る位置まで近づけた状態における距離とした場合に平均接触角が最も小さくなり、高い処理効果が得られる。処理ガス・加熱空気噴出口中心間距離Ｘを限界値よりやや大きくすれば、平均接触角が急増し、その後は処理ガス・加熱空気噴出口中心間距離Ｘを増大させれば平均接触角は増大するが、その勾配は緩やかである結果が得られた。それにより処理ガス・加熱空気噴出口中心間距離Ｘは限界値およびそれに近い距離とすることが望ましいことがわかる。 As is apparent from the graph of FIG. 9, the center distance X between the processing gas and the heated air jet outlet is a limit value, that is, the entire independent opening type processing gas generating / blowing device 12 and the entire heated air generating / blowing device 16 (heater 150). Is a distance in a vertical posture and in a state of being close to a position that can be approached most in terms of their device configuration, the average contact angle becomes the smallest and a high processing effect is obtained. If the distance X between the center of the processing gas and the heated air outlet is made slightly larger than the limit value, the average contact angle increases rapidly. Thereafter, if the distance X between the center of the processing gas and the heated air outlet is increased, the average contact angle increases. However, the result was gentle. Thereby, it can be seen that it is desirable that the distance X between the center of the processing gas and the heated air outlet is a limit value and a distance close thereto.
　その理由は、本プラズマ処理装置においては、被処理面の加熱および処理ガスの噴付けは大気圧下で（大気中で）行われるため、被処理面の加熱後、処理ガスの噴付けまでの間に被処理面の温度が低下するが、処理ガス・加熱空気噴出口中心間距離Ｘが短いほど、加熱から処理ガス噴付けまでの時間が短く、被処理面の温度低下が少なくて済み、処理効果が向上することによると考えられる。 The reason is that in the present plasma processing apparatus, the surface to be processed and the processing gas are sprayed at atmospheric pressure (in the atmosphere). While the temperature of the surface to be processed decreases in the meantime, the shorter the distance X between the center of the processing gas and heated air outlet, the shorter the time from heating to processing gas injection, and the lower the temperature of the surface to be processed. This is considered to be due to the improvement of the processing effect.
　また、加熱空気噴出方向の処理ガス噴出方向に対する傾斜角度を複数種類に異ならせ、それぞれガラス板表面の加熱，処理ガスの噴付けを行い、各場合について水滴の平均接触角を取得する実験を行った。なお、処理ガス・加熱空気噴出口中心間距離Ｘおよび到達領域中心間距離Ｘ´は、上記限界値とは関係なく設定した。この実験により、図１０のグラフに示すように、負の値で規定される傾斜角度が大きい領域において平均接触角が小さく、傾斜角度を小さくすれば、平均接触角が急増する結果が得られた。傾斜角度０は、処理ガス噴出方向と加熱空気噴出方向とが平行な状態であり、傾斜角度が正の状態は、加熱空気噴出方向が処理ガス噴出方向に対して、処理ガス・加熱空気噴出口中心間距離Ｘが到達領域中心間距離Ｘ´より小さくなる方向に傾斜させられた状態である。 In addition, experiments were conducted to obtain the average contact angle of water droplets in each case by differentiating the inclination angle of the heated air ejection direction with respect to the treatment gas ejection direction into multiple types, respectively heating the glass plate surface and spraying the treatment gas. It was. The processing gas / heated air jet center distance X and the reach area center distance X ′ were set regardless of the limit values. As a result of this experiment, as shown in the graph of FIG. 10, the average contact angle is small in the region where the inclination angle defined by a negative value is large, and the average contact angle increases rapidly if the inclination angle is reduced. . The inclination angle 0 is a state in which the processing gas ejection direction and the heated air ejection direction are parallel, and the state in which the inclination angle is positive indicates that the heating air ejection direction is greater than the processing gas ejection direction. In this state, the center-to-center distance X is tilted in a direction that becomes smaller than the reaching region center-to-center distance X ′.
　この実験の結果から、ヒータ１５０を傾斜させれば処理効果は向上するが、大きく傾斜させればよいわけではなく、適切な傾斜角度範囲があることがわかる。その理由は、次のように考えられる。加熱空気噴出方向の傾斜角度が０の状態から負となる方向にヒータ１５０を傾ければ、到達領域中心間距離Ｘ´が処理ガス・加熱空気噴出口中心間距離Ｘより短くなり、加熱から処理ガス噴付けまでの時間を短くすることができ、被処理面の温度低下が少なくて済み、処理効果が向上する。しかし、ヒータ１５０を傾け過ぎれば、加熱空気噴出方向が処理ガス噴出方向に対して直角に近くなって処理ガスを噴き飛ばし、処理ガスの量が不足して処理効果が低下すると考えられるのである。 From the results of this experiment, it is understood that if the heater 150 is tilted, the treatment effect is improved, but it is not necessary to tilt the heater 150 greatly, and there is an appropriate tilt angle range. The reason is considered as follows. If the heater 150 is tilted from a state in which the tilt angle of the heated air ejection direction is zero to a negative direction, the distance X ′ between the reach area centers becomes shorter than the distance X between the center of the processing gas and the heated air ejection port, and the process from the heating The time until gas spraying can be shortened, the temperature drop of the surface to be processed can be reduced, and the processing effect is improved. However, if the heater 150 is tilted too much, it is considered that the heated air jet direction is close to the right angle with respect to the process gas jet direction, and the process gas is blown off.
　加熱空気は処理ガスに向かって噴出されるため、ヒータ１５０の傾きが小さくても加熱空気が処理ガスを噴き飛ばす恐れはあるが、加熱空気の流量が処理ガスの流量より少なくされることにより処理ガスの噴飛ばしが回避され、傾斜角度の適切な設定により、到達領域中心間距離Ｘ´を小さくすることによる処理効果向上効果が得られる。加熱空気の流量を処理ガスの流量より少なくする特徴は、加熱空気噴出方向と処理ガス噴出方向とを、処理ガス・加熱空気噴出口中心間距離Ｘより到達領域中心間距離Ｘ´が小さくなる向きに交差させる特徴と組み合わせて特に有効なのである Since the heated air is ejected toward the processing gas, there is a risk that the heating air may blow off the processing gas even if the inclination of the heater 150 is small, but the processing is performed by reducing the flow rate of the heating air below the flow rate of the processing gas. Gas blowing is avoided, and the effect of improving the processing effect by reducing the distance X ′ between the arrival area centers can be obtained by appropriately setting the inclination angle. The feature of making the flow rate of the heated air smaller than the flow rate of the processing gas is that the distance X ′ between the arrival region centers is smaller than the center distance X between the processing gas and the heating air ejection center in the heating air ejection direction and the processing gas ejection direction. Particularly effective in combination with features that intersect
　これらの実験結果に基づき、さらに３つの実験を行った。１つは、処理ガス・加熱空気噴出口中心間距離Ｘを、加熱空気噴出方向を傾斜させない場合の限界値とし、加熱空気噴出方向の傾斜角度θを複数種類に異ならせてガラス板表面の加熱，処理ガスの噴付けを行い、各々の場合について水滴の平均接触角を取得する実験である。傾斜角度θは、先に傾斜角度θを複数種類に異ならされて行った実験の結果、小さい平均接触角が得られる範囲において異ならせた。その結果を図１１のグラフに示す。処理ガス・加熱空気噴出口中心間距離Ｘを一定とした場合、傾斜角度θを変えることにより到達領域中心間距離Ｘ´が変わり、傾斜角度θを小さくするほど（負の値であるため、絶対値が大きくなるほど）到達領域中心間距離Ｘ´が小さくなって平均接触角が小さくなることがわかる。 Based on these experimental results, three more experiments were conducted. One is to set the distance X between the center of the processing gas and the heated air jet outlet as a limit value when the heated air jet direction is not tilted, and to heat the glass plate surface by varying the tilt angle θ in the heated air jet direction into a plurality of types. In this experiment, the treatment gas is sprayed and the average contact angle of the water droplets is obtained in each case. The inclination angle θ was varied in a range where a small average contact angle was obtained as a result of an experiment conducted by previously varying the inclination angle θ into a plurality of types. The result is shown in the graph of FIG. When the distance X between the center of the processing gas and the heated air jet outlet is constant, the distance X ′ between the centers of the reaching regions changes by changing the inclination angle θ, and the smaller the inclination angle θ (the more negative the value, the absolute value It can be seen that as the value increases, the distance X ′ between the centers of the reaching regions decreases and the average contact angle decreases.
　別の１つの実験は、到達領域中心間距離Ｘ´を、加熱空気噴出方向を傾斜させない場合における限界値とし、加熱空気噴出方向の傾斜角度θを複数種類に異ならせて行ったものである。その結果も図１１のグラフに示す。この場合、加熱空気噴出方向を大きく傾けるほど、平均接触角が大きくなる。これは、到達領域中心間距離Ｘ´が一定であるため、加熱空気噴出方向を傾斜させれば、処理ガス・加熱空気噴出口中心間距離Ｘが大きくなり、加熱空気がガラス板表面に届くまでの距離が大きくなって被処理面の加熱が不足して温度が低下することによると考えられる。 Another experiment was carried out by setting the distance X ′ between the arrival area centers as a limit value when the heating air ejection direction is not inclined, and varying the inclination angle θ in the heating air ejection direction into a plurality of types. The result is also shown in the graph of FIG. In this case, the average contact angle increases as the heated air ejection direction is greatly inclined. This is because the distance X ′ between the arrival area centers is constant, and if the heated air ejection direction is inclined, the distance X between the center of the processing gas / heated air outlet becomes larger and the heated air reaches the glass plate surface. This is considered to be due to the fact that the distance of the surface becomes large and the surface to be treated is not sufficiently heated to lower the temperature.
　さらに、別の１つの実験は、傾斜角度θを、図１０のグラフに示す実験の結果、平均接触角が最少となった場合の大きさとし、到達領域中心間距離Ｘ´を複数種類に異ならせて行ったものである。その結果を図１２のグラフに示す。このグラフからも、到達領域中心間距離Ｘ´が小さいほど処理効果が向上することがわかる。到達領域中心間距離Ｘ´の限界値は、加熱空気の噴出が処理ガスの噴付けの邪魔をしない範囲、すなわち加熱空気到達領域が処理ガス到達領域と干渉しない範囲において最少の距離である。加熱空気噴出方向を傾斜させない場合、ヒータ１５０の独立開口型処理ガス生成・噴出装置１２への接近は放熱部９２により制限されるのに対し、ヒータ１５０を傾斜させれば、図４に示すように、発熱部１６０より厚さが薄い加熱空気噴出部１６２が放熱部９２の下方に入り込む。そのため、ヒータ１５０を鉛直に設ける場合より、加熱空気噴出口１６６を独立開口１０８に近付けることができる。したがって、到達領域中心間距離Ｘ´の限界値は、処理ガス・加熱空気噴出口中心間距離Ｘを加熱空気噴出方向を傾斜させない場合の限界値とし、ヒータ１５０を、本実験の傾斜角度θと同じ角度、傾斜させた場合の到達領域中心間距離Ｘ´より小さく、上記１つめの実験により得られる最少の平均接触角より小さい平均接触角が得られる。 Furthermore, in another experiment, the inclination angle θ is set to a size when the average contact angle is minimized as a result of the experiment shown in the graph of FIG. It was done. The result is shown in the graph of FIG. Also from this graph, it can be seen that the processing effect is improved as the distance X ′ between the centers of the reaching regions is smaller. The limit value of the distance X ′ between the arrival areas is the minimum distance in the range where the ejection of the heated air does not interfere with the injection of the processing gas, that is, the range where the heated air arrival area does not interfere with the treatment gas arrival area. When the heating air ejection direction is not inclined, the approach of the heater 150 to the independent opening type processing gas generation / ejection device 12 is limited by the heat radiating unit 92, whereas when the heater 150 is inclined, as shown in FIG. In addition, the heated air ejection portion 162 having a thickness smaller than that of the heat generating portion 160 enters below the heat radiating portion 92. Therefore, the heated air outlet 166 can be brought closer to the independent opening 108 than when the heater 150 is provided vertically. Therefore, the limit value of the distance X ′ between the reach regions is the limit value when the process gas / heated air outlet center distance X is not inclined in the direction of heating air injection, and the heater 150 is set to the inclination angle θ of this experiment. An average contact angle smaller than the minimum distance X ′ obtained by the first experiment can be obtained which is smaller than the distance X ′ between the centers of the reaching regions when tilted by the same angle.
　以上の実験の結果に基づいて、本実施形態においては、前述のように、加熱空気噴出方向の処理ガス噴出方向に対する傾斜角度θは負の値であって、図１２のグラフに示す実験を行った場合の大きさである－２０度とされ、中心間距離Ｘ´は、その場合の限界値である７．５ｍｍとされている。また、処理ガス噴出口・被処理面間距離Ｚは、独立開口型噴出装置７２に得られる最大のプラズマ到達可能距離とされ、搬送速度は、その最大プラズマ到達可能距離が得られる際の速度とされる。なお、被処理面の温度は加熱時間、すなわち対象物の搬送速度によって変わるため、到達領域中心間距離Ｘ´は一概には規定されない。搬送速度が遅ければ加熱時間が長く、被処理物が内部まで加熱されて温度が下がり難く、到達領域中心間距離Ｘ´が長くても被処理面が加熱された状態で処理ガスを噴き付けて処理することができる。また、搬送速度が速ければ加熱時間が短いが、到達領域中心間距離Ｘ´を短くすることにより、被処理面が加熱された状態で処理することができるのである。 Based on the results of the above experiments, in the present embodiment, as described above, the inclination angle θ of the heated air ejection direction with respect to the processing gas ejection direction is a negative value, and the experiment shown in the graph of FIG. 12 is performed. In this case, the magnitude is −20 degrees, and the center-to-center distance X ′ is 7.5 mm, which is a limit value in that case. Further, the distance Z between the processing gas ejection port and the surface to be treated is the maximum plasma reachable distance obtained in the independent opening type jetting device 72, and the transfer speed is the speed at which the maximum plasma reachable distance is obtained. Is done. In addition, since the temperature of the surface to be processed varies depending on the heating time, that is, the conveyance speed of the object, the distance X ′ between the arrival area centers is not generally defined. If the conveyance speed is slow, the heating time is long, the object to be processed is heated to the inside and the temperature is difficult to decrease, and the processing surface is sprayed while the surface to be processed is heated even if the distance X ′ between the arrival area centers is long. Can be processed. Further, although the heating time is short if the transport speed is high, the processing surface can be processed in a heated state by shortening the distance X ′ between the centers of the reaching regions.
　金型３４ａ，３４ｃの被処理面３８ａ，３８ｃの処理を説明する。この場合には独立開口型噴出装置７２が処理ガス生成装置本体８０に取り付けられる。金型３４ａは位置決め保持部材３６に保持されて搬送され、加熱空気生成・噴出装置１６から独立開口型処理ガス生成・噴出装置１２に向かう向きに搬送される。搬送方向において上流側に位置する加熱空気生成・噴出装置１６の加熱空気噴出口１６６は、独立開口１０８に先行して被処理面３８ａに対向し、被処理面３８ａには処理ガスの噴付けに先立って加熱空気が噴き付けられる。そして、被処理面３８ａは加熱により温度が高くされた状態で処理ガスが噴き付けられ、汚れが除去される。金型３４ｃについても同様である。 Processing of the processed surfaces 38a and 38c of the molds 34a and 34c will be described. In this case, the independent opening type ejection device 72 is attached to the processing gas generation device main body 80. The mold 34 a is held and conveyed by the positioning holding member 36, and is conveyed in the direction from the heated air generating / blowing device 16 toward the independent opening type processing gas generating / blowing device 12. A heated air outlet 166 of the heated air generating / blowing device 16 located upstream in the conveying direction is opposed to the surface to be processed 38a prior to the independent opening 108, and a processing gas is sprayed onto the surface to be processed 38a. Prior to this, heated air is sprayed. Then, the processing gas is sprayed on the surface to be processed 38a in a state where the temperature is raised by heating, and the dirt is removed. The same applies to the mold 34c.
　図８(a-1)に示すように金型３４ａは凹部３９を備えるとともに、凹部３９内には凹部４１が設けられ、被処理面３８ａ（金型３４ａの縁部の端面を含む）が凹凸を有するため、独立開口型処理ガス生成・噴出装置１２は被処理面３８ａの凹凸に沿って昇降させられ、独立開口１０８と被処理面３８ａとの間の距離が予め設定された距離とされた状態で処理ガスの噴付けが行われるようにされる。但し、独立開口型処理ガス生成・噴出装置１２は被処理面３８ａの凹凸の全部に逐一沿って昇降させられるのではなく、概ね沿って移動させられる。処理ガスは独立開口１０８から棒状に噴出され、プラズマ到達可能距離が長いため、小さい凹凸の存在による処理ガス噴出口・被処理面間距離の変化の影響が緩和されるからであり、独立開口型処理ガス生成・噴出装置１２の昇降制御が簡単になる。金型３４ｃについても同様である。 As shown in FIG. 8 (a-1), the mold 34a has a recess 39, a recess 41 is provided in the recess 39, and the surface 38a to be processed (including the end face of the edge of the mold 34a) is uneven. Therefore, the independent opening type processing gas generating / blowing device 12 is moved up and down along the unevenness of the processing surface 38a, and the distance between the independent opening 108 and the processing surface 38a is set to a preset distance. The processing gas is sprayed in the state. However, the independent opening type processing gas generating / blowing device 12 is not moved up and down along all the irregularities of the surface 38a to be processed, but is moved substantially along. This is because the processing gas is ejected in a rod shape from the independent opening 108 and the plasma reachable distance is long, so that the influence of the change in the distance between the processing gas ejection port and the surface to be processed due to the presence of small irregularities is mitigated. The raising / lowering control of the processing gas generation / spouting device 12 is simplified. The same applies to the mold 34c.
　そのため、本実施形態においては、被処理面３８ａ，３８ｃのうち、独立開口型処理ガス生成・噴出装置１２を、独立開口１０８と被処理面３８ａ，３８ｃとの間の距離が設定距離となる位置に位置させる面が予め設定され、基準面ないし目標面としてコンピュータに入力され、記憶させられている。基準面により、独立開口型処理ガス生成・噴出装置１２の被処理物３４に対する相対移動経路が接近・離間方向および相対移動装置による相対移動方向において規定される。基準面は、被処理物の形状，寸法に応じてコンピュータにより自動的に設定されるようにすることも可能であるが、ここでは、説明の簡単化のために、作業者により決められるものとし、かつ、独立開口型処理ガス生成・噴出装置１２が金型３４ａ，３４ｃの縁には当たらない高さで昇降させられる。作業者は被処理物の形状，寸法に基づいて基準面を設定するのであり、例えば、金型３４ａについては、その縁部の端面と、凹部３９の底面との高さの差は大きいのに対し、凹部４１は横断面積は広いが浅く、凹部４１の周囲の部分との高さの差が小さいため、周囲の部分と同様にプラズマが十分届くと作業者が判断し、図８(a-2)に太線で示すように被処理面３８ａについては、金型３４ａの縁部の端面と凹部３９の底面の凹部４１が形成されていない部分の面とを含む面を基準面１８４とする。また、金型３４ｃについては、凸部４５は横断面積が小さいため、凸部４５の周囲の部分と同様にプラズマ処理されると作業者が判断し、図８(c-2)に太線で示すように被処理面３８ｃについては、金型３４ｃの縁部の端面と凹部４３の底面の凸部４５が形成されていない部分の面とを含む面を基準面１８６とする。 Therefore, in the present embodiment, of the processing surfaces 38a and 38c, the position where the distance between the independent opening 108 and the processing surfaces 38a and 38c is the set distance for the independent opening type processing gas generating / blowing device 12. The surface to be positioned at is set in advance and is input and stored in the computer as a reference surface or a target surface. The reference plane defines the relative movement path of the independent opening type processing gas generation / spouting device 12 with respect to the object 34 in the approach / separation direction and the relative movement direction by the relative movement device. The reference plane can be automatically set by a computer in accordance with the shape and dimensions of the workpiece, but here it is determined by the operator for the sake of simplicity. In addition, the independent opening type processing gas generating / blowing device 12 is moved up and down at a height that does not hit the edges of the molds 34a and 34c. The operator sets the reference plane based on the shape and dimensions of the workpiece. For example, for the mold 34a, the difference in height between the end face of the edge and the bottom face of the recess 39 is large. On the other hand, since the recess 41 has a large cross-sectional area but is shallow and the difference in height from the surrounding portion of the recess 41 is small, the operator determines that the plasma reaches sufficiently as in the surrounding portion, and FIG. As shown by a thick line in 2), for the surface to be processed 38a, a surface including the end surface of the edge of the mold 34a and the surface of the bottom surface of the recess 39 where the recess 41 is not formed is taken as a reference surface 184. In addition, for the mold 34c, the convex portion 45 has a small cross-sectional area, so that the operator determines that the plasma treatment is performed in the same manner as the portion around the convex portion 45, and is indicated by a thick line in FIG. 8 (c-2). As described above, regarding the surface 38c to be processed, a surface including the end surface of the edge of the mold 34c and the surface of the bottom surface of the concave portion 43 where the convex portion 45 is not formed is taken as a reference surface 186.
　基準面１８４，１８６は、その被処理物搬送方向に平行な方向の位置と、その位置における金型３４ａ，３４ｃの下面に対する高さとが対応付けられた基準面データにより規定される。被処理物搬送方向に平行な方向の位置は、被処理物３４の搬送方向において下流側の端を原点として決められる。金型３４ａの凹部４１の底面については、その搬送方向に平行な方向の位置に対して凹部３９の底面の凹部４１が形成されていない部分の高さが対応付けられ、基準面データとして記憶させられることとなる。また、金型３４ｃの凸部４５については、その搬送方向に平行な方向の位置に対して、凹部４３の底面の凸部４５が形成されていない部分の高さが対応付けられ、基準面データとして記憶させられる。本実施形態においては、位置決め保持部材３６の被処理物３４の下面を支持する支持面が上下方向の位置の基準とされているのである。 The reference surfaces 184 and 186 are defined by reference surface data in which the position in the direction parallel to the workpiece conveyance direction and the height relative to the lower surfaces of the molds 34a and 34c at the position are associated with each other. The position in the direction parallel to the workpiece conveyance direction is determined with the downstream end in the conveyance direction of the workpiece 34 as the origin. For the bottom surface of the concave portion 41 of the mold 34a, the height of the portion of the bottom surface of the concave portion 39 where the concave portion 41 is not formed is associated with the position in the direction parallel to the conveyance direction, and stored as reference plane data. Will be. Further, for the convex portion 45 of the mold 34c, the height of the portion of the bottom surface of the concave portion 43 where the convex portion 45 is not formed is associated with the position in the direction parallel to the conveyance direction, and the reference plane data As memorized. In the present embodiment, the support surface that supports the lower surface of the workpiece 34 of the positioning holding member 36 is used as a reference for the vertical position.
　金型３４ａがプラズマ処理装置に搬入されれば、距離センサ１８２により、距離センサ１８２と被処理面３８ａとの間の距離が検出される。この検出距離から、被処理面３８ａの距離センサ１８２により距離を検出される部分の金型３４ａの下面からの高さが得られる。距離センサ１８２およびローラコンベヤ３０は処理装置本体１０に設けられて上下方向の位置が不変であり、位置決め保持部材３６により保持されて搬送される被処理物３４の被処理面３８と距離センサ１８２との間の距離は、被処理面３８の高さにより決まるからである。また、距離センサ１８２と独立開口１０８とは被処理物搬送方向に平行な方向において離れているが、その離間距離および被処理物搬送速度により、被処理面３８ａの距離センサ１８２により距離を検出された部分が、距離センサ１８２により距離を検出される位置である距離検出位置から独立開口１０８の下方の位置に至るまでに要する時間が得られ、被処理面３８ａの距離センサ１８２により距離を検出された部分の独立開口１０８の下方への到達がわかる。 When the mold 34a is carried into the plasma processing apparatus, the distance between the distance sensor 182 and the surface to be processed 38a is detected by the distance sensor 182. From this detection distance, the height from the lower surface of the mold 34a of the part whose distance is detected by the distance sensor 182 of the processing surface 38a is obtained. The distance sensor 182 and the roller conveyor 30 are provided in the processing apparatus main body 10, and their positions in the vertical direction are not changed, and the surface to be processed 38 of the object to be processed 34 that is held and conveyed by the positioning holding member 36 and the distance sensor 182 This is because the distance between is determined by the height of the surface 38 to be processed. Further, the distance sensor 182 and the independent opening 108 are separated in a direction parallel to the workpiece conveyance direction, but the distance is detected by the distance sensor 182 on the workpiece surface 38a based on the separation distance and the workpiece conveyance speed. Is obtained from the distance detection position where the distance is detected by the distance sensor 182 to the position below the independent opening 108, and the distance is detected by the distance sensor 182 of the processing surface 38a. It can be seen that the part reaches the lower side of the independent opening 108.
　高さの検出により、被処理面３８ａの被処理物搬送方向において下流側の端であって、金型３４ａの処理ガス噴付け開始端が検出され、その開始端が独立開口１０８の下方に到達すれば、以後、独立開口型処理ガス生成・噴出装置１２は金型３４ａに対して上下方向において、基準面データおよび設定された処理ガス噴出口・被処理面間距離により決まる位置に位置させられる。それにより、独立開口型処理ガス生成・噴出装置１２は金型３４ａの凹部３９の縁部の上方を通過した後に下降させられ、その縁部より低い位置にある凹部３９の底面に接近させられて処理ガスを噴き付け、処理ガス噴付け効果を得ることができる。しかし、独立開口型処理ガス生成・噴出装置１２は凹部４１に対応して昇降させられることはなく、独立開口１０８は、図８(a-2)に二点鎖線で示すように被処理面３８ａに概ね沿った状態で相対移動させられ、処理ガスを噴き付ける。金型３４ｃについても同様に、独立開口型処理ガス生成・噴出装置１２は凸部４５に対応して昇降させられることはなく、図８(c-2)に二点鎖線で示すように被処理面３８ｃに概ね沿った状態で処理ガスを噴き付ける。距離センサ１８２は、金型３４ａ，３４ｃの下流側端の検出後は、金型３４ａ，３４ｃが通過するまで距離の検出は行わず、通過後、検出を再開し、後続の金型３４ａ，３４ｃの下流側端を検出する。金型３４ａ，３４ｃの通過は、金型３４ａ，３４ｃの寸法によりわかる。 By detecting the height, the processing gas injection start end of the mold 34a, which is the downstream end of the processing surface 38a in the workpiece conveyance direction, is detected, and the start end reaches below the independent opening 108. Then, the independent opening type processing gas generating / spouting device 12 is positioned at a position determined by the reference plane data and the set distance between the processing gas outlet and the processing target surface in the vertical direction with respect to the mold 34a. . As a result, the independent opening type processing gas generating / spouting device 12 is lowered after passing over the edge of the recess 39 of the mold 34a, and is brought close to the bottom surface of the recess 39 at a position lower than the edge. The processing gas can be sprayed to obtain the processing gas spraying effect. However, the independent opening type processing gas generating / blowing device 12 is not moved up and down corresponding to the recess 41, and the independent opening 108 has a surface to be processed 38a as shown by a two-dot chain line in FIG. 8 (a-2). The gas is relatively moved along the direction of the gas and sprays the processing gas. Similarly, for the mold 34c, the independent opening type processing gas generating / blowing device 12 is not moved up and down in correspondence with the convex portion 45, and the object to be processed as shown by a two-dot chain line in FIG. 8 (c-2). A processing gas is sprayed in a state substantially along the surface 38c. After detecting the downstream ends of the molds 34a and 34c, the distance sensor 182 does not detect the distance until the molds 34a and 34c pass. After the passage, the distance sensor 182 restarts the detection, and the subsequent molds 34a and 34c. The downstream end of is detected. The passage of the molds 34a and 34c is known from the dimensions of the molds 34a and 34c.
　独立開口１０８から棒状に噴出される処理ガスは、プラズマ到達可能距離が長く、凹部３９,４３内の凹凸いずれの面にも届き、被処理面３８が処理される。被処理面３８ａ，３８ｃには凹凸があり、水平な一平面ではなく、鉛直方向において下向きの処理ガス噴出方向は、概して被処理面に沿う方向に直角であることとなる。本実施形態においては制御装置２２のコンピュータの距離センサ１８２の距離検出に基づく被処理物３４の処理ガス噴付け開始端の検出，基準面データおよび設定された処理ガス噴出口・被処理面間距離に基づいて電動モータ４４を制御する部分が、接近・離間制御部ないし被処理面追従部を構成している。 The processing gas ejected in a rod shape from the independent opening 108 has a long plasma reachable distance and reaches any surface of the recesses 39 and 43 so that the surface to be processed 38 is processed. The processing surfaces 38a and 38c are uneven, and the processing gas ejection direction downward in the vertical direction is generally perpendicular to the direction along the processing surface. In the present embodiment, the detection of the processing gas injection start end of the object to be processed 34 based on the distance detection of the distance sensor 182 of the computer of the control device 22, the reference surface data, and the set distance between the processing gas outlet and the processing surface are set. The part that controls the electric motor 44 based on the above constitutes an approach / separation control unit or a surface to be processed tracking unit.
　液晶基板３４ｂの被処理面３８ｂの処理を説明する。この場合には、スリット型噴出装置７４が処理ガス生成装置本体８０に取り付けられる。スリット型処理ガス生成・噴出装置１４による処理時には、被処理物の被処理面の加熱は行われない。加熱空気生成・噴出装置１６は処理ガス生成装置本体８０から取り外してもよく、取り付けたままとしてもよい。処理ガス噴出口・被処理面間距離Ｚは、スリット型噴出装置７４に得られるプラズマ到達可能距離および液晶基板３４ｂの搬送速度に基づいて設定される。そして、昇降部材４０の昇降により、スリット状開口１４４が、処理ガス噴出口・被処理面間距離Ｚが設定距離となる位置に位置させられる。液晶基板３４ｂは位置決め保持部材３６に収容され、搬送されつつスリット型噴出装置７４から噴出される処理ガスが噴き付けられ、被処理面３８ｂが処理される。なお、スリット型処理ガス生成・噴出装置１４による処理ガスの噴付け時にも、処理ガスの噴付けに先立って被処理面の加熱を行ってもよい。 Processing of the processing surface 38b of the liquid crystal substrate 34b will be described. In this case, the slit-type ejection device 74 is attached to the processing gas generation device main body 80. During the processing by the slit type processing gas generating / blowing device 14, the surface to be processed of the object to be processed is not heated. The heated air generating / blowing device 16 may be removed from the processing gas generating device main body 80 or may remain attached. The distance Z between the processing gas ejection port and the surface to be processed is set based on the plasma reachable distance obtained in the slit-type ejection device 74 and the transport speed of the liquid crystal substrate 34b. Then, by raising and lowering the elevating member 40, the slit-shaped opening 144 is positioned at a position where the distance Z between the processing gas ejection port and the surface to be processed becomes a set distance. The liquid crystal substrate 34b is accommodated in the positioning holding member 36, and a processing gas ejected from the slit-type ejection device 74 is sprayed while being conveyed, and the surface to be processed 38b is processed. In addition, when the processing gas is sprayed by the slit type processing gas generating / blowing device 14, the surface to be processed may be heated prior to the processing gas spraying.
　別の実施形態を図１３に基づいて説明する。
  本実施形態の大気圧プラズマ処理装置（以後、プラズマ処理装置と略称する）は、図１３に概略的に示すように、生成・噴出装置昇降装置２００の生成・噴出部保持体たる昇降部材２０１に処理ガス生成・噴出装置２０２が設けられるとともに、その両側にそれぞれ加熱空気生成・噴出装置２０４，２０６が設けられている。 Another embodiment will be described with reference to FIG.
The atmospheric pressure plasma processing apparatus of this embodiment (hereinafter abbreviated as “plasma processing apparatus”), as schematically shown in FIG. 13, has a lifting / lowering member 201 serving as a generation / ejection part holder of the generation / ejection apparatus lifting / lowering apparatus 200. A processing gas generation / injection device 202 is provided, and heated air generation / injection devices 204 and 206 are provided on both sides thereof.
　処理ガス生成・噴出装置２０２は処理ガス生成装置２１０および処理ガス噴出装置２１２を備え、加熱空気生成・噴出装置２０４，２０６はそれぞれ発熱部２２０および加熱空気噴出部２２２を備えている。各発熱部２２０は、長手方向が鉛直となり、処理ガス生成・噴出装置２０２と平行な姿勢で設けられている。また、各加熱空気噴出部２２２は発熱部２２０の下端部に設けられ、処理ガス噴出装置２１２側へ延び出させられた後、鉛直方向において下方へ延び出させられている。本実施形態においては、加熱空気噴出部２２２が曲げられることにより加熱空気噴出部２２２が処理ガス噴出装置２１２に接近させられ、処理ガス噴出方向と加熱空気噴出方向とが平行であって、鉛直方向において下向きとされており、加熱空気が処理ガスを噴き飛ばす恐れがない。また、処理装置本体２２４には、被処理物搬送方向に平行な方向において加熱空気生成・噴出装置２０４，２０６のそれぞれ、処理ガス生成・噴出装置２０２とは反対側の部分に距離センサ２２６，２２８が設けられている。その他の構成は前記実施形態と同じであり、対応する構成要素には同じ符号を付して説明を省略する。 The processing gas generation / ejection device 202 includes a processing gas generation device 210 and a processing gas ejection device 212, and the heated air generation / ejection devices 204 and 206 include a heating unit 220 and a heating air ejection unit 222, respectively. Each heat generating part 220 is provided in a posture in which the longitudinal direction is vertical and parallel to the processing gas generating / blowing device 202. Each heated air ejection part 222 is provided at the lower end part of the heat generating part 220 and is extended downward in the vertical direction after being extended to the processing gas ejection device 212 side. In this embodiment, the heated air ejection part 222 is bent to bring the heated air ejection part 222 closer to the process gas ejection device 212, and the process gas ejection direction and the heated air ejection direction are parallel to each other in the vertical direction. The heated air has no fear of blowing off the processing gas. Further, in the processing apparatus main body 224, distance sensors 226 and 228 are provided at portions on the opposite side of the processing gas generation / injection device 202, respectively, of the heated air generation / injection devices 204 and 206 in a direction parallel to the workpiece conveyance direction. Is provided. Other configurations are the same as those of the above-described embodiment, and corresponding components are denoted by the same reference numerals and description thereof is omitted.
　本プラズマ処理装置において、例えば、前記金型３４ａのように、被処理面が凹凸を有する被処理物２３０を処理する場合、処理ガス生成・噴出装置２０２として独立開口型処理ガス生成・噴出装置が使用され、被処理物２３０が被処理物搬送装置１８により往復移動させられて処理が行われる。被処理物２３０の往方向への移動時、ここでは被処理物搬送方向に平行な方向において被処理物投入装置が設けられた側から被処理物取出装置が設けられた側への移動時には、加熱空気生成・噴出装置２０４，２０６のうち、往方向において処理ガス生成・噴出装置２０２の上流側の加熱空気生成・噴出装置２０４により、加熱空気噴出部２２２の加熱空気噴出口から加熱空気が被処理面に噴射され、加熱される。加熱空気噴出部２２２は、処理ガス噴出装置２１２に近接させられており、被処理面には加熱後、直ちに処理ガス噴出装置２１２の処理ガス噴出口から処理ガスが噴き付けられる。また、加熱空気生成・噴出装置２０４の上流側の距離センサ２２６による距離の検出に基づいて被処理物２３０の下流側端が検出され、昇降部材２０１が基準面データおよび設定された処理ガス噴出口・被処理面間距離に従って昇降させられ、処理ガス噴出装置２１２が被処理面２３２に概ね沿って処理ガスの噴付けが行われる。 In this plasma processing apparatus, for example, when processing an object 230 whose surface to be processed has irregularities, such as the mold 34 a, an independent opening type processing gas generating / blowing apparatus is used as the processing gas generating / blowing apparatus 202. The processing object 230 is used, and the processing object 230 is reciprocated by the processing object transport device 18 to perform processing. When moving the workpiece 230 in the forward direction, here, when moving from the side where the workpiece input device is provided in the direction parallel to the workpiece conveyance direction to the side where the workpiece extraction device is provided, Of the heated air generation / spouting devices 204 and 206, the heated air generation / spouting device 204 on the upstream side of the processing gas generation / spouting device 202 in the forward direction causes the heated air to be covered from the heated air ejection port of the heated air ejection unit 222. It is sprayed on the processing surface and heated. The heated air ejection part 222 is brought close to the processing gas ejection device 212, and the processing gas is sprayed from the processing gas ejection port of the processing gas ejection device 212 immediately after heating to the surface to be treated. Further, the downstream end of the workpiece 230 is detected based on the distance detection by the upstream distance sensor 226 of the heated air generating / spouting device 204, and the lifting member 201 is set to the reference plane data and the set processing gas jet port. The substrate is moved up and down according to the distance between the processing surfaces, and the processing gas ejection device 212 sprays the processing gas substantially along the processing surface 232.
　被処理物２０８の往方向の移動により被処理面全部が処理されたならば、被処理物２０８は逆方向、ここでは被処理物取出装置側から被処理物投入装置側へ搬送される。この逆方向であって復方向の搬送時には、搬送方向において処理ガス生成・噴出装置２０２の上流側に位置する加熱空気生成・噴出装置２０６の加熱空気噴出部２２２の加熱空気噴出口から加熱空気が噴出され、処理ガスの噴付けに先立って被処理面が加熱される。また、加熱空気生成・噴出装置２０６の上流側の距離センサ２２８による距離の検出に基づく被処理物２３０の下流側端の検出，処理ガス生成・噴出装置２０２の高さ方向の位置調節が行われる。このように被処理物２３０が往復移動させられ、被処理面２３２が２回、処理されることにより、凹凸のある被処理面の全体が漏れなく十分に処理される。被処理物を３回以上、処理することも可能である。また、被処理物搬送方向において処理ガス生成・噴出装置２０２の下流側の加熱空気生成・噴出装置に加熱空気を噴出させ、処理後の被処理面を加熱し、温度低下を防止して処理ガス噴付けにより起こる化学反応が促進されるようにしてもよい。プラズマの失活を遅らせるためには、噴出されたプラズマを加熱気体、特に不活性ガス、例えば、窒素ガスにより囲むことが理想であるが、被処理物２０８の搬送方向において処理ガス生成・噴出装置２０２の両側に加熱空気生成・噴出装置２０４，２０６を設け、被処理物２０８の処理の前後に加熱空気を噴出させれば、プラズマを囲んだ状態に近い状態となり、望ましい。 If the entire surface to be processed is processed by the forward movement of the object to be processed 208, the object to be processed 208 is conveyed in the reverse direction, here, from the object extraction device side to the object input device side. At the time of transport in the reverse direction and in the reverse direction, heated air flows from the heated air ejection port of the heated air ejection section 222 of the heated air generation / ejection device 206 located upstream of the processing gas generation / ejection device 202 in the conveyance direction. The surface to be processed is heated prior to the injection of the processing gas. Further, the detection of the downstream end of the object 230 based on the detection of the distance by the distance sensor 228 on the upstream side of the heated air generating / injecting device 206 and the adjustment of the position of the processing gas generating / injecting device 202 in the height direction are performed. . In this way, the workpiece 230 is reciprocated, and the processing surface 232 is processed twice, so that the entire processing surface with unevenness is sufficiently processed without omission. It is also possible to process an object to be processed three or more times. In addition, heated air is jetted to the heated air generating / blowing device downstream of the processing gas generating / blowing device 202 in the direction of the workpiece to be processed, and the processed surface is heated to prevent a temperature drop and processing gas. A chemical reaction caused by spraying may be promoted. In order to delay the deactivation of the plasma, it is ideal to surround the ejected plasma with a heating gas, particularly an inert gas, for example, nitrogen gas. It is desirable that the heated air generating / blowing devices 204 and 206 are provided on both sides of the 202 and the heated air is jetted before and after the processing of the workpiece 208, so that the state is close to the state of surrounding the plasma.
　本プラズマ処理装置により前記液晶基板３４ｂのように凹凸のない被処理面を有する被処理物を処理する場合、被処理物は被処理物投入装置側から被処理物取出装置側へ１回、移動させられ、処理ガスの噴付けが１回、行われる。この場合、被処理面３８ｂを加熱するのであれば、設定された被処理物搬送方向において処理ガス生成・噴出装置２０２の上流側に位置する加熱空気生成・噴出装置２０４が加熱に使用される。 When processing an object having an uneven surface such as the liquid crystal substrate 34b by the plasma processing apparatus, the object is moved once from the object input device side to the object extraction device side. The process gas is sprayed once. In this case, if the surface to be processed 38 b is heated, the heated air generating / injecting device 204 located upstream of the processing gas generating / injecting device 202 in the set processing object conveyance direction is used for heating.
　なお、加熱気体生成・噴出装置を１つの発熱部および２つの加熱気体噴出部を有し、発熱部において加熱された加熱気体が２つの加熱気体噴出部の各加熱気体噴出口から択一的に噴出される装置とし、２つの加熱気体噴出口を処理ガス噴出口の両側に設けてもよい。 Note that the heated gas generating / spouting device has one heat generating portion and two heated gas ejecting portions, and the heated gas heated in the heat generating portion is alternatively selected from the heated gas ejection ports of the two heated gas ejecting portions. A device to be ejected may be provided, and two heated gas ejection ports may be provided on both sides of the processing gas ejection port.
　また、処理ガス噴出口の両側に加熱気体噴出口を設ければ、相対移動装置による生成・噴出部保持体と被処理物保持体との相対移動方向を任意に選択できるようにすることも可能である。例えば、相対移動装置が被処理物搬送装置とされ、被処理物搬送方向において一方の側に被処理物投入装置が設けられ、他方の側に被処理物取出装置が設けられる場合、被処理物投入装置および被処理物取出装置が被処理物搬送装置の被処理物搬送方向に隔たった両側のいずれの側に設けられても、それに応じた方向に被処理物を搬送し、被処理面の加熱および処理ガスの噴付けを行うことができる。この場合にも、処理時に処理ガス噴出口の両側の加熱気体噴出口から加熱気体を噴出させれば、処理ガスの噴付け前後における被処理面の加熱により反応が促進され、また、プラズマを加熱気体により囲んだ状態に近い状態が得られることとなり、望ましい。 In addition, if heated gas outlets are provided on both sides of the processing gas outlet, it is possible to arbitrarily select the relative movement direction of the generation / ejection part holder and the object holder by the relative movement device. It is. For example, when the relative movement device is a workpiece transfer device, the workpiece input device is provided on one side in the workpiece transfer direction, and the workpiece removal device is provided on the other side, the workpiece Regardless of whether the input device and the workpiece removal device are provided on either side of the workpiece conveyance device separated in the workpiece conveyance direction, the workpiece is conveyed in the direction corresponding thereto, Heating and spraying of process gas can be performed. Also in this case, if the heated gas is ejected from the heated gas ejection ports on both sides of the processing gas ejection port at the time of processing, the reaction is accelerated by heating the surface to be processed before and after the processing gas is sprayed, and the plasma is heated. A state close to a state surrounded by gas is obtained, which is desirable.
　相対移動装置は、生成・噴出部保持体と被処理物保持体とを、概して被処理物の被処理面に平行な平面上において、互いに交差する２方向に相対移動可能なものとしてもよい。それにより、例えば、比較的広い被処理面の処理が可能となる。２方向の一方の相対移動により、移動方向と直角な方向において行われる処理範囲が被処理面より小さい場合、一方の方向の相対移動後、生成・噴出部保持体と被処理物保持体とを他方向に相対移動させて被処理面の未処理部分上に生成・噴出部を位置させ、再び一方の方向に相対移動させて未処理部分に処理を行うことができるからである。相対移動装置は、生成・噴出部保持体と被処理物保持体との一方を２方向に移動させるものとしてもよく、生成・噴出部保持体と被処理物保持体との一方を２方向の一方に移動させ、他方を２方向の他方に移動させるものとしてもよい。 The relative movement device may be configured such that the generating / spouting part holder and the workpiece holder can be relatively moved in two directions intersecting each other on a plane parallel to the workpiece surface of the workpiece. Thereby, for example, a relatively wide surface to be processed can be processed. When the processing range performed in the direction perpendicular to the moving direction is smaller than the surface to be processed due to the relative movement in one of the two directions, after the relative movement in one direction, the generation / ejection part holding body and the object holding body are This is because the generation / spouting portion can be positioned on the unprocessed portion of the surface to be processed by relative movement in the other direction, and the unprocessed portion can be processed by relative movement again in one direction. The relative movement device may be configured to move one of the generation / spout unit holding body and the workpiece holding body in two directions, and one of the generation / spout portion holding body and the workpiece holding body in two directions. It is good also as what moves to one side and moves the other to the other of two directions.
　生成・噴出部保持体と被処理物保持体との２方向の相対移動と、加熱気体噴出口の処理ガス噴出口の両側における設置とを組み合わせれば、広い被処理面について加熱および処理ガスの噴付けを行う場合、処理を能率良く行うことができる。生成・噴出部保持体と被処理物保持体とを２方向の他方に移動させて未処理部分上に生成・噴出部を位置させた後、２方向の一方において逆向きに移動させる際に被処理面の加熱，処理ガスの噴付けを行うことができるからである。 By combining the two-way relative movement of the generating / spouting part holding body and the object to be processed and the installation of the heated gas outlet on both sides of the processing gas outlet, heating and processing gas can be When spraying, processing can be performed efficiently. When the generating / spouting part holder and the workpiece holder are moved in the other direction in the two directions to position the generating / spouting part on the unprocessed part, This is because the processing surface can be heated and the processing gas can be sprayed.
　処理ガス生成・噴出部と加熱気体生成・噴出部とは別体に構成され、個々に生成・噴出部保持体に着脱可能に保持されてもよく、処理ガス生成・噴出部と加熱気体生成・噴出部とが一体的に構成されてもよい。この一体の生成・噴出部は、生成・噴出部保持体に対して着脱可能とされてもよく、着脱可能とされなくてもよい。プラズマ処理装置が独立開口型処理ガス生成・噴出部とスリット型処理ガス生成・噴出部との両方を含む場合、それぞれを加熱気体生成・噴出部と一体的に構成してもよく、両処理ガス生成・噴出部が処理ガス生成部を共通とする場合、その共通の処理ガス生成部が加熱気体生成・噴出部と一体的に構成されてもよい。 The process gas generating / spouting unit and the heated gas generating / spouting unit are configured separately, and may be separately attached to the generating / spouting unit holder, or the processing gas generating / spouting unit and the heated gas generating / The ejection part may be integrally formed. This integral generation / spouting unit may or may not be removable from the generation / spouting unit holder. When the plasma processing apparatus includes both the independent opening type processing gas generation / spouting unit and the slit type processing gas generation / spouting unit, each may be integrated with the heated gas generation / spouting unit. When the generation / spouting unit shares the processing gas generation unit, the common processing gas generation unit may be configured integrally with the heated gas generation / spouting unit.
　また、独立開口型処理ガス生成・噴出部とスリット型処理ガス生成・噴出部とが択一的に生成・噴出部保持体に取り付けられるようにしてもよい。この場合、両処理ガス生成・噴出部はそれぞれ処理ガス生成部を含むものとされる。 Further, the independent opening type processing gas generation / spouting part and the slit type processing gas generation / spouting part may alternatively be attached to the generation / spouting part holder. In this case, both the processing gas generation / ejection sections include the processing gas generation section.
　接近・離間装置は、生成・噴出部保持体と被処理物保持体とを作業者が手動で段階的あるいは連続的に接近，離間させる装置とされてもよい。 The approach / separation device may be a device that allows an operator to manually approach or separate the generation / spout unit holder and the workpiece holder manually or stepwise.
　駆動源を備えた接近・離間装置は、(1)手動入力に応じて作動するものと、(2)生成・噴出部保持体を予め設定された移動経路に沿って自動的に移動させるものと、(3)被処理面までの距離を計測する距離検出部の検出結果に応じて自動的に作動するものとを含む。(3)の態様は、距離センサの検出値が目標値から設定値以上外れた場合、接近・離間装置が作動するようにすれば、生成・噴出部保持体を被処理面に概ね沿うように移動させることが可能となる。上記(2)および(3)の態様は、独立開口型処理ガス生成・噴出部に適しているが、スリット型処理ガス生成・噴出部に適用してもよい。 The approach / separation device equipped with a drive source includes (1) one that operates in response to manual input, and (2) one that automatically moves the generating / spouting part holder along a preset movement path. And (3) one that automatically operates according to the detection result of the distance detection unit that measures the distance to the surface to be processed. In the mode (3), if the detection value of the distance sensor deviates from the target value or more than the set value, if the approach / separation device is activated, the generating / spouting portion holder is generally along the surface to be processed. It can be moved. The above aspects (2) and (3) are suitable for the independent opening type processing gas generation / spouting part, but may be applied to the slit type processing gas generation / spouting part.
　独立開口型噴出部とスリット型噴出部とは、共通の処理ガス生成部に対して簡易迅速に着脱可能なものであることが望ましい。例えば、噴出部と処理ガス生成部との一方に設けられた係合部と他方に設けられた被係合部とを係合，離脱させることにより着脱されるようにする。ただし、処理ガスの圧力は比較的高いため、その圧力でも処理ガスが漏れないような構造とすることが必要である。 It is desirable that the independent opening type jet part and the slit type jet part are detachable with respect to a common process gas generating part easily and quickly. For example, the engagement portion provided on one of the ejection portion and the processing gas generation portion and the engaged portion provided on the other are engaged and disengaged to be attached and detached. However, since the pressure of the processing gas is relatively high, it is necessary to have a structure in which the processing gas does not leak even at that pressure.
  加熱気体生成・噴出部および処理ガス生成・噴出部は、処理ガス生成・噴出部全体が加熱気体生成・噴出部に対して傾斜させられてもよく、それらの一方の噴出部のみが傾斜させられてもよい。 The heated gas generation / spout section and the processing gas generation / spout section may be inclined with respect to the heated gas generation / spout section as a whole, or only one of the spout sections is tilted. May be.
　独立開口型処理ガス生成・噴出部とスリット型処理ガス生成・噴出部とが処理ガス生成部を共通とし、その共通の処理ガス生成部に対して独立開口型噴出部とスリット型噴出部とが択一的に取り付けられる特徴は、加熱気体生成・噴出部を有さないプラズマ処理装置において採用可能である。 The independent opening type processing gas generating / spouting unit and the slit type processing gas generating / spouting unit share the processing gas generating unit, and the independent opening type spouting unit and the slit type spouting unit are different from the common processing gas generation unit. The alternatively attached feature can be employed in a plasma processing apparatus that does not have a heated gas generation / ejection section.
　前記実施形態において放熱部９２のフィン９４は切り欠かれていなかったが、フィン９４の一部を切り欠き、その切欠の中に加熱空気生成・噴出装置１６を配設し、処理ガス生成・噴出装置１２，１４と加熱空気生成・噴出装置１６とを互いに近づけるようにしてもよい。 In the above-described embodiment, the fin 94 of the heat radiating portion 92 is not cut out. However, a part of the fin 94 is cut out, and the heated air generating / blowing device 16 is disposed in the cutout to generate and blow out the processing gas. The apparatuses 12 and 14 and the heated air generating / blowing apparatus 16 may be brought close to each other.
　被処理物搬送装置は、被処理物を、処理ガス生成・噴出部に対して処理ガス噴出方向に距離を隔てた状態で、処理ガス噴出方向と交差する方向に搬送する装置であればよく、ローラコンベヤに限らず、例えばベルトコンベヤやチェーンコンベヤの採用が可能である。 The processing object transport device may be any device that transports the processing object in a direction intersecting the processing gas ejection direction with a distance in the processing gas ejection direction from the processing gas generation / ejection part, For example, a belt conveyor or a chain conveyor can be used instead of the roller conveyor.
　さらに、本発明は、低圧雰囲気中においてプラズマ処理を行う低圧プラズマ処理装置にも適用可能である。 Furthermore, the present invention can be applied to a low-pressure plasma processing apparatus that performs plasma processing in a low-pressure atmosphere.
　１２：独立開口型処理ガス生成・噴出装置　　１４：スリット型処理ガス生成・噴出装置　　１６：加熱空気生成・噴出装置　　２０：生成・噴出装置昇降装置　　３４：被処理物　　３４ａ：金型　　３４ｂ：液晶基板　　３８，３８ａ，３８ｂ：被処理面　　７０：処理ガス生成装置　　７２：独立開口型噴出装置　　７４：スリット型噴出装置　　８８：放電空間　　１０６：処理ガス流出通路　　１０８：独立開口　　１３２：スリット状通路　　１４４：スリット状開口　　１５０：ヒータ　　１６２：加熱空気噴出部　　２００：生成・噴出装置昇降装置　　２０２：処理ガス生成・噴出装置　　２０４，２０６：加熱空気生成・噴出装置　　２１０：処理ガス生成装置  　２１２：処理ガス噴出装置　　２２２：加熱空気噴出部　　２３０：被処理物　　２３２：被処理面 12: Independent opening type processing gas generation / spouting device 14: Slit type processing gas generation / spouting device 16: Heated air generation / spouting device 20: Generation / spouting device lifting device 34: Object to be processed 34a: Mold 34b: Liquid crystal substrate 38, 38a, 38b: surface to be processed 70: processing gas generating device 72: independent opening type jetting device 74: slit type jetting device 88: discharge space 106: processing gas outflow passage 108: independent opening 132: slit-like passage 144: slit 150: Heater 162: Heated air ejection unit 200: Generation / injection device lifting device 202: Process gas generation / injection device 204, 206: Heated air generation / injection device 210: Process gas generation device 212: Process gas ejection device 222 : Heated air jet Department 230: Object to be processed 232: Surface to be processed

Claims (15)

  1. 　放電空間に供給されるガスを、少なくともプラズマ内に生成された反応種を含む処理ガスとし、その処理ガスを処理ガス噴出口から噴出させる処理ガス生成・噴出部と、
    　ヒータにより加熱した加熱気体を加熱気体噴出口から噴出させる加熱気体生成・噴出部と、
    　それら処理ガス生成・噴出部および加熱気体生成・噴出部を、前記処理ガス噴出口と前記加熱気体噴出口とが一方向に並ぶ状態で保持する生成・噴出部保持体と、
    　前記処理ガスにより被処理面を処理されるべき被処理物を保持する被処理物保持体と、
    　前記処理ガス噴出口および前記加熱気体噴出口が前記被処理物保持体に保持された被処理物の被処理面に対向する状態で、前記生成・噴出部保持体と前記被処理物保持体とを前記処理ガス噴出口と前記加熱気体噴出口との並び方向に、かつ、前記加熱気体噴出口が前記処理ガス噴出口に先行して被処理面に対向することとなる向きに相対移動させる相対移動装置と
    　を含み、加熱気体により加熱した被処理面を処理ガスにより処理するプラズマ処理装置。     A gas supplied to the discharge space is a processing gas containing at least a reactive species generated in the plasma, and a processing gas generating / spouting section for ejecting the processing gas from the processing gas ejection port;
    A heated gas generating / spouting part for ejecting the heated gas heated by the heater from the heated gas spout;
    A generating / spouting part holding body for holding the processing gas generating / spouting part and the heated gas generating / spouting part in a state where the processing gas spout and the heated gas spout are aligned in one direction,
    A workpiece holder for holding a workpiece to be processed by the processing gas; and
    In the state where the processing gas jet port and the heated gas jet port face the processing surface of the workpiece held by the workpiece holding body, the generation / spout part holding body, the workpiece holding body, Relative to each other in the direction in which the processing gas jet port and the heated gas jet port are aligned, and in the direction in which the heated gas jet port faces the processing surface prior to the processing gas jet port. A plasma processing apparatus for processing a surface to be processed heated by a heated gas with a processing gas.
  2. 　前記処理ガス噴出口および前記加熱気体噴出口が、前者から噴出した処理ガスと後者から噴出した加熱気体とがそれぞれ被処理面に到達する両到達領域の中心間距離が２５ｍｍ以下となる状態に互いに近接させられた請求項１に記載のプラズマ処理装置。 The processing gas jetting port and the heated gas jetting port are in a state where the distance between the centers of both reaching regions where the processing gas jetted from the former and the heated gas jetted from the latter reach the surface to be processed is 25 mm or less. The plasma processing apparatus according to claim 1, which is placed close to each other.
  3. 　前記加熱気体生成・噴出部が前記加熱気体噴出口から加熱気体を噴出させる方向と、前記処理ガス生成・噴出部が前記処理ガス噴出口から処理ガスを噴出させる方向とが、両噴出口の中心間距離より処理ガスと加熱気体とが被処理面にそれぞれ到達する両到達領域の中心間距離が小さくなる向きに、互いに交差させられた請求項１または２に記載のプラズマ処理装置。 The direction in which the heated gas generating / spouting part ejects the heated gas from the heated gas outlet and the direction in which the processing gas generating / spouting part ejects the processing gas from the processing gas outlet are the centers of the two outlets. 3. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is made to intersect each other in such a direction that the distance between the centers of both reaching regions where the processing gas and the heated gas reach the surface to be processed is smaller than the distance between them.
  4. 　前記加熱気体生成・噴出部が前記加熱気体噴出口から噴出させる加熱気体の流量が、前記処理ガス生成・噴出部が前記処理ガス噴出口から噴出させる処理ガスの流量より少ない請求項１ないし３のいずれかに記載のプラズマ処理装置。 The flow rate of the heating gas which the said heating gas production | generation / ejection part ejects from the said heating gas ejection port is less than the flow volume of the processing gas which the said processing gas production | generation / ejection part ejects from the said processing gas ejection port. The plasma processing apparatus according to any one of the above.
  5. 　前記処理ガス生成・噴出部と前記加熱気体生成・噴出部とが互いに別体に構成され、互いに分離可能である請求項１ないし４のいずれかに記載のプラズマ処理装置。 The plasma processing apparatus according to any one of claims 1 to 4, wherein the processing gas generation / spouting unit and the heated gas generation / spouting unit are configured separately from each other and separable from each other.
  6. 　前記処理ガス生成・噴出部および前記加熱気体生成・噴出部が前記生成・噴出部保持体に対して着脱可能である請求項１ないし５のいずれかに記載のプラズマ処理装置。 The plasma processing apparatus according to any one of claims 1 to 5, wherein the processing gas generation / spouting section and the heated gas generation / spouting section are detachable from the generation / spouting section holder.
  7. 　さらに、前記生成・噴出部保持体と前記被処理物保持体とを、前記相対移動装置による相対移動方向と交差する方向に互いに接近・離間させる接近・離間装置を含む請求項１ないし６のいずれかに記載のプラズマ処理装置。 Furthermore, the production | generation / spout part holding body and the said to-be-processed object holding body include the approach / separation apparatus which approaches / separates mutually in the direction which cross | intersects the relative movement direction by the said relative movement apparatus. A plasma processing apparatus according to claim 1.
  8. 　前記接近・離間装置が、駆動源を備え、その駆動源の制御により前記生成・噴出部保持体と前記被処理物保持体とを接近・離間させるものである請求項７に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 7, wherein the approach / separation device includes a drive source, and causes the generation / spout unit holder and the workpiece holder to approach / separate by control of the drive source. .
  9. 　前記相対移動装置が、前記生成・噴出部保持体と前記被処理物保持体とを、概して被処理物の被処理面に平行な平面上において、互いに交差する２方向に相対移動可能なものである請求項１ないし８のいずれかに記載のプラズマ処理装置。 The relative movement device is capable of relatively moving the generating / spouting part holder and the workpiece holding body in two directions intersecting each other on a plane generally parallel to the workpiece surface of the workpiece. The plasma processing apparatus according to claim 1.
  10. 　前記処理ガス噴出口として、互いに独立した複数の開口が一線上に互いに間隔を隔てて並んだ独立開口列を有する独立開口型処理ガス生成・噴出部と、一線に沿って延びるスリット状の開口を有するスリット型処理ガス生成・噴出部との少なくとも一方を含む請求項１ないし９のいずれかに記載のプラズマ処理装置。 As the processing gas ejection port, there are an independent opening type processing gas generation / ejection part having an independent opening row in which a plurality of independent openings are arranged on a line at intervals, and a slit-like opening extending along the line. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus includes at least one of a slit-type processing gas generation / ejection unit.
  11. 　前記独立開口型処理ガス生成・噴出部と前記スリット型処理ガス生成・噴出部との両方を含む請求項１０に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 10, comprising both the independent opening type processing gas generation / spouting unit and the slit type processing gas generation / spouting unit.
  12. 　前記独立開口型処理ガス生成・噴出部と前記スリット型処理ガス生成・噴出部とが、供給されるガスを処理ガスとする処理ガス生成部を共通とし、その共通の処理ガス生成部に対して、前記独立開口列を有する独立開口型噴出部と、前記スリット状開口を有するスリット型噴出部とが択一的に取り付けられることにより構成される請求項１１に記載のプラズマ処理装置。 The independent opening type processing gas generation / spouting unit and the slit type processing gas generation / spouting unit share a processing gas generation unit using the supplied gas as a processing gas, and the common processing gas generation unit The plasma processing apparatus according to claim 11, wherein the independent opening-type ejection part having the independent opening row and the slit-type ejection part having the slit-like opening are alternatively attached.
  13. 　前記独立開口型処理ガス生成・噴出部と前記スリット型処理ガス生成・噴出部とが択一的に前記生成・噴出部保持体に取り付け可能である請求項１１に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 11, wherein the independent opening type processing gas generation / spouting part and the slit type processing gas generation / spouting part can be alternatively attached to the generation / spouting part holder.
  14. 　加熱気体生成・噴出部の前記加熱気体噴出口が前記処理ガス生成・噴出部の前記処理ガス噴出口の両側に設けられ、それら両側に設けられた加熱気体噴出口の各々が前記処理ガス噴出口に先行して被処理面に対向することとなる向きに、前記相対移動装置が前記生成・噴出部保持体と前記被処理物保持体とを選択的に移動させる請求項１ないし１３のいずれかに記載のプラズマ処理装置。 The heated gas outlet of the heated gas generating / spouting part is provided on both sides of the processing gas outlet of the processing gas generating / spouting part, and each of the heated gas outlets provided on both sides thereof is the processed gas outlet. 14. The method according to claim 1, wherein the relative movement device selectively moves the generation / spout part holding body and the processing object holding body in a direction that faces the processing surface prior to the processing. The plasma processing apparatus according to 1.
  15. 　プラズマ処理が大気圧雰囲気中において行われる請求項１ないし１４のいずれかに記載のプラズマ処理装置。 The plasma processing apparatus according to any one of claims 1 to 14, wherein the plasma processing is performed in an atmospheric pressure atmosphere.
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