WO2014172617A1 - Monolithic pzt actuator, stage, and method for making - Google Patents

Monolithic pzt actuator, stage, and method for making Download PDF

Info

Publication number
WO2014172617A1
WO2014172617A1 PCT/US2014/034620 US2014034620W WO2014172617A1 WO 2014172617 A1 WO2014172617 A1 WO 2014172617A1 US 2014034620 W US2014034620 W US 2014034620W WO 2014172617 A1 WO2014172617 A1 WO 2014172617A1
Authority
WO
WIPO (PCT)
Prior art keywords
piezoelectric
monolithic
bulk
stage
starting
Prior art date
Application number
PCT/US2014/034620
Other languages
French (fr)
Inventor
Amit Lal
Sachin NADIG
Serhan Ardanuc
Original Assignee
Cornell University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cornell University filed Critical Cornell University
Priority to US14/785,442 priority Critical patent/US10158063B2/en
Publication of WO2014172617A1 publication Critical patent/WO2014172617A1/en
Priority to US16/222,243 priority patent/US20190214543A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G01C19/5733—Structural details or topology
    • G01C19/5755—Structural details or topology the devices having a single sensing mass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G01C19/5769—Manufacturing; Mounting; Housings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
    • G01P15/0922—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up of the bending or flexing mode type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/0095—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing combined linear and rotary motion, e.g. multi-direction positioners
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/10—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing rotary motion, e.g. rotary motors
    • H02N2/108—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing rotary motion, e.g. rotary motors around multiple axes of rotation, e.g. spherical rotor motors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H10N30/2044—Cantilevers, i.e. having one fixed end having multiple segments mechanically connected in series, e.g. zig-zag type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H10N30/2045—Cantilevers, i.e. having one fixed end adapted for in-plane bending displacement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings

Definitions

  • aspects and embodiments of the invention are generally directed to piezoelectric actuators, precision moveable stages utilizing the piezoelectric effect, and methods for making the piezoelectric actuators and, more particularly, to monolithic bulk-piezoelectric actuators, precision moveable stages utilizing the monolithic bulk-piezoelectric actuators, and methods for making the monolithic bulk-piezoelectric actuators using direct-write micro-patterning techniques.
  • Ultrasonic motors and piezoelectric actuators utilize actuator constructs such as bimorphs, unimorphs, and shear tubes made of piezoelectric materials such PZT (Lead Zirconate Titanate Oxide).
  • Piezoelectric materials undergo a change in shape by extension or compression depending on poling directions and electrodes used to provide charges that develop an electric field across the piezoelectric materials.
  • Bimorph actuation is most commonly used to maximize displacement in piezoelectric actuators. Most commercially available bimorphs are made of ceramic
  • piezoelectric materials with thicknesses ranging from 10s of microns to a few millimeters. These piezoelectric materials are often referred to as bulk piezoelectric materials. These actuators are macro-scale, millimeter in thickness, and centimeter in width and length, and are often designed by gluing multiple layers, making them mostly unsuitable for integration in microsystems, where many actuators are required within volumes of mm 3 to 1 cm 3. Manual assembly of many of these large devices and/or special attention to polarization directions are required for large displacements, which does not lead to small systems, as the manual assembly techniques generally preclude precision placement and repeatable performance across different assembled actuators in one assembly.
  • thin film MEMS unimorphs and bimorphs use micron-thick piezoelectric material (e.g. PZT, A1N, ZnO) that can result in actuator arrays that can be made in small volumes, in a monolithic manner.
  • Typical thicknesses for the active piezoelectric layer that can be achieved range from nanometers to 10s of microns.
  • the amount of mechanical energy generated by the piezoelectric actuator is proportional to its volume. Hence, the thickness of these structures is too small to produce sufficient forces. Therefore, there is a need for developing thicker piezoelectric actuators, monolithically, to create repeatable, and matched actuators.
  • Focused laser beams are regularly used to cut and drill (laser-micromachining) into ceramic plates including PZT plates.
  • laser cutting to realize planar structures is therefore an attractive method to achieve low-cost, out-of-cleanroom fabrication of actuator arrays.
  • capacitors near the stage for buffering and filtering electronic signals.
  • passive electrical components such as capacitors, resistors, and inductors. It would be advantageous and beneficial to be able to form these components directly, monolithically in PZT using direct write micropatterning.
  • Piezoelectric devices also include piezoelectric gyroscopes, accelerometers, and energy harvesters. It would be advantageous and beneficial to be able to form these components directly, monolithically in a PZT, co-fabricated with the motion stage, using direct write micropatterning, with the lateral actuator as the elemental component.
  • 'bulk piezo' refers to a material or a substrate means a commercially available piezoelectric (PZT) plate having deposited electrodes on two opposing surfaces thereof.
  • PZT piezoelectric
  • starting top surface means a top electrode-deposited surface of the bulk piezoelectric material or substrate; the term 'starting bottom surface' means a bottom electrode-deposited surface of the bulk piezoelectric material or substrate.
  • 'monolithic means a single piece as, for example, the bulk PZT including the deposited electrodes is a monolithic piece, whereas two or more monolithic pieces clamped or bonded together is not considered monolithic as used herein.
  • 'plurality of monolithic, contiguous segments means a monolithic plurality of continuous segments oriented in a non-linear manner; e.g., like a 'potato peel.'
  • 'in-plane' means in the plane containing the length, L, dimension of the monolithic PZT actuator.
  • the term 'about' means the amount of the specified quantity plus/minus a fractional amount (e.g., +10%, ⁇ 9%, ⁇ 8%, ⁇ 7%, +6%, ⁇ 5%, ⁇ 4%, +3%, ⁇ 2%, +1%, etc.) thereof that a person skilled in the art would recognize as typical and reasonable for that particular quantity or measurement.
  • a fractional amount e.g., +10%, ⁇ 9%, ⁇ 8%, ⁇ 7%, +6%, ⁇ 5%, ⁇ 4%, +3%, ⁇ 2%, +1%, etc.
  • substantially means as close to or similar to the specified term being modified as a person skilled in the art would recognize as typical and reasonable; for e.g., within typical manufacturing and/or assembly tolerances, as opposed to being intentionally different by design and implementation or.
  • claimed term “...an operative condition of substantially only in-plane motion” means measurable in-plane motion and de-minimus, if any, out-of-plane motion.
  • the piezoelectric actuator includes a bulk piezoelectric substrate having a starting top surface and an opposing starting bottom surface; and a plurality of electrodes operatively disposed on the bulk piezoelectric substrate consisting of a plurality of discrete electrodes disposed on at least one of the starting top surface and the starting bottom surface and at least one electrode disposed on the at least one of the respective starting bottom surface and the starting top surface.
  • the piezoelectric actuator may include the following additional features, limitations, and/or characteristics, alone or in combination:
  • the piezoelectric actuator is characterized by an operative condition of substantially only in-plane motion
  • the piezoelectric actuator is characterized by a width, W, a height, H, and a length, L, where W is less than or about equal to H to enable high aspect ratio piezoelectric beam structures;
  • the piezoelectric actuator is comprised of a plurality of monolithic, contiguous segments, each next adjoining segment of which has an in-plane orientation along the length, L, that is different than that of its respective prior segment by between greater than zero degrees to + 90 degrees;
  • the piezoelectric actuator has a curvilinear length dimension
  • the bulk piezoelectric substrate has at least one intermediate surface
  • the bulk piezoelectric substrate is characterized by an operative condition comprising an out-of-plane twisting motion.
  • An aspect of the invention is a method for monolithically making a piezoelectric actuator.
  • the method includes the steps of providing a bulk piezoelectric (PZT) material that includes an electrode disposed on a starting top surface thereof and on an opposing starting bottom surface thereof; and using a direct write micropatterning technique to remove at least a portion of the electrode on at least one of the starting top surface and the starting bottom surface, such that the monolithic, bulk PZT material comprises a plurality of electrodes consisting of a plurality of discrete electrodes on the at least one of the starting top surface and the starting bottom surface and at least one electrode on the at least one of the respective starting bottom surface and the starting top surface.
  • PZT bulk piezoelectric
  • the method may include the following additional steps, features, limitations, and/or characteristics, alone or in combination:
  • the direct write (maskless) micropatterning technique includes at least one of laser micromachining, water-jet drilling, ultrasonic drilling, electrical discharge machining, laser- assisted etching, and micro-CNC machining;
  • the monolithic piezoelectric actuator into a beam shape in a length, L, direction characterized by a width, W and a height, H, where W is less than or about equal to H and W, H « L;
  • the monolithic piezoelectric actuator into a plurality of monolithic, contiguous segments, each next adjoining segment of which has an in-plane orientation along the length, L, that is different than that of its respective prior segment by between greater than zero degrees to + 90 degrees;
  • An aspect of the invention is a stage.
  • the stage includes a PZT base; a plurality of the piezoelectric actuators as described immediately herein above disposed on the base; a movable platform disposed on the base; and a plurality of deformable connectors each having a first connection to a respective one of the plurality of piezoelectric actuators and a second connection to a respective portion of the movable platform, wherein the stage is electrically controllable.
  • the piezoelectric actuator may include the following additional features, limitations, and/or characteristics, alone or in combination: -wherein each of the plurality of the piezoelectric actuators are characterized by an operative condition of substantially only in-plane motion;
  • each of the plurality of the piezoelectric actuators are characterized by a width, W, a height, H, and a length, L, where W is less than or about equal to H;
  • each of the plurality of the piezoelectric actuators is comprised of a plurality of monolithic, contiguous segments, each next adjoining segment of which has an in-plane orientation along the length, L, that is different than that of its respective prior segment by between greater than zero degrees to + 90 degrees;
  • each of the bulk piezoelectric actuators has a curvilinear length dimension; -wherein the bulk piezoelectric substrate of each of the plurality of the piezoelectric actuators has at least one intermediate surface;
  • each of the bulk piezoelectric substrates is asymmetric in the H direction
  • each of the bulk piezoelectric substrates is characterized by an operative condition comprising an out-of-plane twisting motion
  • the moveable PZT platform integrally comprises a monolithic, bulk PZT device
  • the monolithic, bulk PZT device is at least one of a sensor, a gyroscope, an accelerometer, and an energy harvester;
  • -further comprising a monolithic, bulk PZT device mounted on the moveable platform;
  • the monolithic, bulk PZT device is at least one of a sensor, a gyroscope, an accelerometer, and an energy harvester.
  • An aspect of the invention is a method for making a stage as described immediately herein above.
  • the method includes the steps of providing a plurality of the piezoelectric actuators as described herein above; providing a moveable PZT platform; providing a respective plurality of deformable connectors each having a first connection to a respective one of the plurality of piezoelectric actuators and a second connection to a respective portion of the movable platform.
  • the method may include the following additional steps, features, limitations, and/or characteristics, alone or in combination: -forming a monolithic, bulk PZT device in the moveable PZT platform.
  • Fig 1 (a) schematically shows the process flow used for fabricating a Bulk PZT bimorph; (b) shows an image of a fabricated 10 mm long, 0.45 mm wide, 0.5 mm thick bulk PZT bimorph for in-plane actuation; (c) schematically shows a top view of the bulk PZT bimorph unactuated (left) and actuated for lateral, in-plane deflection (right), according to illustrative embodiments of the invention.
  • Fig. 2 shows a schematic cross sectional view of a monolithic piezoelectric actuator in which the non-electrode containing starting top surface has been direct write micropatterned to form a non-electrode containing intermediate surface; (b) shows a schematic cross sectional view of a monolithic piezoelectric actuator in which the non-electrode containing starting bottom surface has been direct write micropatterned to form a non-electrode containing intermediate surface; (c) shows a schematic cross sectional view of a monolithic piezoelectric actuator in which the non- electrode containing starting top surface and the non-electrode containing starting top surface have been direct write micropatterned to form non-symmetrical, non-electrode containing intermediate surfaces, according to illustrative aspects of the invention.
  • Fig. 3 schematically illustrates in a top view a two section monolithic, contiguous PZT bimorph in an unactuated (top) and an actuated (bottom) state for providing in-plane deflection, according to an illustrative aspect of the invention.
  • Fig. 4 shows a photograph of a stage comprising a base, a rotatable platform, four quadratically positioned monolithic, contiguous PZT bimorph actuators, and four respective springs each connected to an actuator and the rotatable platform, according to an exemplary embodiment of the invention.
  • a device is shown mounted on the rotatable platform.
  • Fig. 5 schematically illustrates a four actuator stage (center), a cross sectional view of one of the monolithic PZT actuators comprising the stage (lower left), a table showing a positive or a negative voltage that can be applied to the numbered electrodes VI- V8 of the four PZT actuators to achieve a desired motion, and a graph showing angular and linear speeds of the actuators depending on the provided excitation, according to illustrative aspects of the invention.
  • Fig. 6 a) Cross sectional view of capacitors formed by selective depolarization of PZT; b) Capacitor in use as part of the associated electronic circuitry, according to illustrative aspects of the invention.
  • Fig. 7 schematically illustrates a monolithic, piezoelectric gyroscope design according to an illustrative aspect of the invention.
  • Fig. 8 shows a monolithically fabricated piezoelectric gyroscope (Fig. 7) placed in a DIP package (left), and mounting the piezoelectric gyroscope on the rotatable (dither) platform of the stage, according to illustrative aspects of the invention.
  • An embodiment of the invention is a monolithic, bulk piezoelectric actuator 100-1 capable of in- plane (lateral) motion with substantially no out-of-plane (transverse) motion, as illustrated, respectively, in Figs, la and lc.
  • the bulk piezoelectric actuator 100-1 is derived from a commercially available bulk PZT and consists of a bulk PZT material 101 and electrodes 102 T and 102 B on top and bottom surfaces, respectively, of the bulk PZT material 101.
  • Fig la also schematically shows the process flow used for fabricating the monolithic, bulk PZT actuator 100-1 from the monolithic, bulk PZT plate 100.
  • the top and bottom electrodes 102 ⁇ and 102B are provided on what are referred to as the starting top surface 108 and the starting bottom surface 109 of the bulk PZT plate 100.
  • a direct write micropatterning technique is used on the bulk PZT plate 100 to remove a portion of the starting top surface electrode 102 ⁇ and a portion of the starting bottom surface electrode 102 b , such that the monolithic, bulk PZT material 100 now comprises two discrete electrodes 102a, 102b on the starting top surface and two discrete electrodes 102c, 102d on the starting bottom surface resulting in monolithic, bulk PZT actuator 100-1.
  • the invention contemplates an operable monolithic, bulk PZT actuator having at least two discrete electrodes disposed on at least one of the starting top surface and the starting bottom surface and at least one electrode disposed on the other respective starting bottom surface and starting top surface.
  • the embodied actuator exhibits substantially only lateral (i.e., in the plane of the length, L, direction) motion (see Fig. lc) upon application of a voltage.
  • the monolithic, bulk PZT actuator is in the geometry of a beam; i.e., having a cross sectional width, W and Height, H, where W is less than or about equal to H, and a length, L, where L is much greater than W or H.
  • Fig. la it schematically illustrates a method for monolithically making a piezoelectric actuator.
  • a bulk piezoelectric (PZT) material that includes an electrode disposed on a starting top surface thereof and on an opposing starting bottom surface thereof is provided.
  • a direct write micropatterning technique is used to remove at least a portion of the electrode on at least one of the starting top surface and the starting bottom surface, such that the monolithic, bulk PZT material comprises a plurality of electrodes consisting of a plurality of discrete electrodes on the at least one of the starting top surface and the starting bottom surface and at least one electrode on the at least one of the respective starting bottom surface and the starting top surface.
  • the direct write (maskless) micropatterning technique includes at least one of laser micromachining, water-jet drilling, ultrasonic drilling, electrical discharge machining, laser-assisted etching, and micro-CNC machining.
  • the direct write technique allows precision removal of PZT and/or electrode material, optionally with double-side (top-bottom) alignment capability.
  • Electrodes patterned on the PZT plate generates motion, whose direction and amplitude are controlled by the polarity and magnitudes of electrical potentials on the electrodes formed on the device.
  • An advantageous feature of the embodied invention is that it allows monolithic fabrication of actuators from commercially available piezoelectric plates without any mask making, lithography, or electrode deposition step, all of which increase the time and cost of manufacture. Furthermore, the ability to double side align the electrodes can yield almost doubling of the actuator displacements in certain actuation arrangements, and allows more complex displacement vectors at the tip due to an additional electrode formed on the back side.
  • Fig. lb shows an image of a fabricated 10 mm long, 0.45 mm wide, 0.5 mm thick bulk PZT bimorph (two electrodes top and bottom) for in-plane actuation.
  • the direct write micropatterning technique can also be advantageously employed to created intermediate PZT material surfaces (211, 212, 213, 214, others) as illustrated in Figs. 2(a, b, c).
  • the monolithic, bulk PZT actuators having symmetric or asymmetric, electrodeless intermediate surfaces can provide both controllable in-plane and/or out-of-plane (planar and/or twisting) motion(s) depending upon starting surface electrode number, sizes, and applied voltages. It will be appreciated that according to the embodied invention, electrodes are only disposed on the starting top and bottom surfaces and never on any of the intermediate PZT surfaces.
  • the monolithic, bulk PZT actuator 301 can be fabricated into a plurality of contiguous segments 301 n (two segments 301 nl , 301 n2 shown), such that when voltage is applied, the actuator experiences in-plane (plane of the paper) motion.
  • subsequent segment 301 2 is oriented (in-plane) at an angle of 90 degrees from preceding segment 301 ⁇ however, it is to be appreciated that the angle between adjoining contiguous segments can be any angle between greater than zero degrees to + 90 degrees.
  • the plurality of segments may also proceed in a curve manner such as an in-plane 'potato peel' shape.
  • Fig. 4 shows a stage 400 that includes a base 406, a plurality (four shown) of multi-segment (3011 , 301 2 , 301 3 , etc.), monolithic, bulk PZT actuators 401 piezoelectric actuators disposed quadratically on and about the base, a movable platform 407 disposed on the base, and a plurality (four shown) of deformable connectors 412 each having a first connection 412a to a respective one of the plurality of piezoelectric actuators 401 and a second connection 412b to a respective portion of the movable platform 407. Electrode connections are also illustrated.
  • the multi- segment, monolithic, bulk PZT actuators 401 can be of the no-intermediate surface type (Fig. 1) or of the electrodeless-intermediate surface type (Fig. 2).
  • Fig. 5 illustrates a stage 501 that schematically shows an actuator or actuator segment in cross section.
  • the illustrated actuator or actuator segment has two electrodes each on the starting top and bottom surfaces of the bulk PZT and no intermediate surfaces.
  • the table in Fig. 5 illustrates controllable motion control of the actuators and thus of the moveable platform by virtue of the voltage polarity applied to each of the electrodes.
  • Fig. 6a shows a cross sectional view of capacitors formed by selective depolarization of PZT.
  • Fig. 6b similarly shows a capacitor in use as part of the associated electronic circuitry.
  • the same direct write micropatterning technique and process flow as used for monolithically fabrication the embodied bulk, monolithic piezoelectric actuators can be used to form the electrical components.
  • piezoelectric device including but not limited to piezoelectric gyroscopes, accelerometers, and energy harvesters, mounted on or integrally formed in the rotatable platform of the motion stage. From cost and integration standpoints, it would be especially advantageous and beneficial to form these components directly,
  • Fig. 7 schematically illustrates an illustrative direct write micropatterned monolithic, piezoelectric gyroscope.
  • Fig. 8 shows the monolithically fabricated gyroscope incorporated into a piezoelectric rotatable (dither) platform of the motion stage, as illustrated in Figs. 4 and 5.
  • Monolithic integration of a piezoelectric device on a stage suspended far from the stage's base also allows thermal isolation of the device. This is useful for thermal actuation and sensing applications of bulk- PZT, which relies on generation or sustaining of large temperature gradients between the stage's base and the device.
  • inventive embodiments are presented by way of example only and that, within the scope of the appended claims and equivalents thereto, inventive embodiments may be practiced otherwise than as specifically described and claimed.
  • inventive embodiments of the present disclosure are directed to each individual feature, system, article, material, kit, and/or method described herein.
  • a reference to "A and/or B", when used in conjunction with open-ended language such as “comprising” can refer, in one embodiment, to A only (optionally including elements other than B); in another embodiment, to B only (optionally including elements other than A); in yet another embodiment, to both A and B (optionally including other elements); etc.
  • the phrase "at least one,” in reference to a list of one or more elements, should be understood to mean at least one element selected from any one or more of the elements in the list of elements, but not necessarily including at least one of each and every element specifically listed within the list of elements and not excluding any combinations of elements in the list of elements.
  • This definition also allows that elements may optionally be present other than the elements specifically identified within the list of elements to which the phrase "at least one" refers, whether related or unrelated to those elements specifically identified.
  • At least one of A and B can refer, in one embodiment, to at least one, optionally including more than one, A, with no B present (and optionally including elements other than B); in another embodiment, to at least one, optionally including more than one, B, with no A present (and optionally including elements other than A); in yet another embodiment, to at least one, optionally including more than one, A, and at least one, optionally including more than one, B (and optionally including other elements); etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Micromachines (AREA)

Abstract

A monolithic, bulk piezoelectric actuator includes a bulk piezoelectric substrate having a starting top surface and an opposing starting bottom surface and a at least two electrodes operatively disposed on the bulk piezoelectric substrate consisting of at least two discrete electrodes disposed on either/both of the starting top surface and the starting bottom surface and at least one electrode disposed on the respective other starting bottom surface or starting top surface. A stage includes a base, at least two of the monolithic, bulk piezoelectric actuators disposed on the base, a movable platform disposed on the base, and a respective number of deformable connectors each having a first connection to a respective one of the piezoelectric actuators and a second connection to a respective portion of the movable platform. A method for monolithically making a monolithic, bulk piezoelectric actuator involves a direct write micropatterning technique.

Description

MONOLITHIC PZT ACTUATOR, STAGE, AND METHOD FOR MAKING
Related Application Data
The instant application claims priority to US provisional application Serial No. 61/813,498 filed April 18, 2013, the subject matter of which is incorporated herein by reference in its entirety.
Background
Aspects and embodiments of the invention are generally directed to piezoelectric actuators, precision moveable stages utilizing the piezoelectric effect, and methods for making the piezoelectric actuators and, more particularly, to monolithic bulk-piezoelectric actuators, precision moveable stages utilizing the monolithic bulk-piezoelectric actuators, and methods for making the monolithic bulk-piezoelectric actuators using direct-write micro-patterning techniques.
Precision piezoelectric stages for linear and rotary motion have proven to be of great value in areas that require accurate and precise positioning and calibration. Ultrasonic motors and piezoelectric actuators utilize actuator constructs such as bimorphs, unimorphs, and shear tubes made of piezoelectric materials such PZT (Lead Zirconate Titanate Oxide).
Piezoelectric materials undergo a change in shape by extension or compression depending on poling directions and electrodes used to provide charges that develop an electric field across the piezoelectric materials. Bimorph actuation is most commonly used to maximize displacement in piezoelectric actuators. Most commercially available bimorphs are made of ceramic
piezoelectric materials with thicknesses ranging from 10s of microns to a few millimeters. These piezoelectric materials are often referred to as bulk piezoelectric materials. These actuators are macro-scale, millimeter in thickness, and centimeter in width and length, and are often designed by gluing multiple layers, making them mostly unsuitable for integration in microsystems, where many actuators are required within volumes of mm 3 to 1 cm 3. Manual assembly of many of these large devices and/or special attention to polarization directions are required for large displacements, which does not lead to small systems, as the manual assembly techniques generally preclude precision placement and repeatable performance across different assembled actuators in one assembly.
Alternatively, thin film MEMS unimorphs and bimorphs use micron-thick piezoelectric material (e.g. PZT, A1N, ZnO) that can result in actuator arrays that can be made in small volumes, in a monolithic manner. Typical thicknesses for the active piezoelectric layer that can be achieved range from nanometers to 10s of microns. The amount of mechanical energy generated by the piezoelectric actuator is proportional to its volume. Hence, the thickness of these structures is too small to produce sufficient forces. Therefore, there is a need for developing thicker piezoelectric actuators, monolithically, to create repeatable, and matched actuators. In light of these shortcomings, others have tried to form monolithic piezoelectric actuators with bulk piezoelectric materials. For example, Aktakka et ah (A 3-DOF piezoelectric micro vibratory stage based on bulk-PZT/silicon crab-leg suspensions, IEEE MEMS. 2013) first polished PZT plates, bonded them to silicon substrates, and then wet etched them to form structures in PZT and silicon. As another example, Kommepalli et al. (Piezoelectric T-beam actuators, ASME J. Mechanical Design, vol. 133, 061003, pp. 1-9, 2011) cut PZT plates using a dicing saw and dry etching to obtain T-structures with six (3 on top and 3 on bottom) electrodes on one beam. This reference develops a structure that enables in-plane and out-of-plane actuation. The dry etching approach requires lithographic patterning and a mask layer. These steps are time-consuming and costly due to the plasma generation system, cost of the gases used, and the need for a cleanroom to manufacture the actuators. It would be cost-effective and commercially attractive to develop a maskless patterning and etching technique in one, to develop and fabricate monolithic piezoelectric actuator arrays. In addition, one can develop approaches to tune the structures for perfect matching across actuators in the same fabrication process.
Focused laser beams are regularly used to cut and drill (laser-micromachining) into ceramic plates including PZT plates. The incorporation of laser cutting to realize planar structures is therefore an attractive method to achieve low-cost, out-of-cleanroom fabrication of actuator arrays. For the specific application of implementing a motion stage, one often needs to develop pure motion only in one direction. For example, one desires pure rotation or pure linear motion in two directions. If one actuates in one direction, it should lead to minimal motion in the other directions. At the same time one desires to maximize the motion of the stage for a given drive voltage. In the case of a rotary motion, the in-plane motion due to lateral bimorphs generates bending at the interface of the actuators to the stage, which also excites shear motion if directly connected to a rotary stage. Hence, realization of a pure rotary dither motion is a technical challenge not addressed before, and its enablement would be beneficial.
In addition to the actuators, it is often desirable to include capacitors near the stage for buffering and filtering electronic signals. For some electronic sensors and actuators one often needs passive electrical components such as capacitors, resistors, and inductors. It would be advantageous and beneficial to be able to form these components directly, monolithically in PZT using direct write micropatterning.
Piezoelectric devices also include piezoelectric gyroscopes, accelerometers, and energy harvesters. It would be advantageous and beneficial to be able to form these components directly, monolithically in a PZT, co-fabricated with the motion stage, using direct write micropatterning, with the lateral actuator as the elemental component.
In view of the aforementioned shortcomings and problems associated with conventional unimorph and bimorph piezoelectric actuators, and existing approaches to monolithic actuation, the inventors have recognized the advantages and benefits to be realized by addressing these challenges and solving these problems, many of which are realized by the embodied invention directed to monolithic bulk-piezoelectric actuators, precision moveable stages utilizing the monolithic bulk-piezoelectric actuators, and methods for making the monolithic bulk- piezoelectric actuators using direct-write micropatterning techniques, as disclosed and claimed herein below.
Definitions as used herein The term 'bulk piezo' as it refers to a material or a substrate means a commercially available piezoelectric (PZT) plate having deposited electrodes on two opposing surfaces thereof.
The term 'starting top surface' means a top electrode-deposited surface of the bulk piezoelectric material or substrate; the term 'starting bottom surface' means a bottom electrode-deposited surface of the bulk piezoelectric material or substrate.
The term 'monolithic' means a single piece as, for example, the bulk PZT including the deposited electrodes is a monolithic piece, whereas two or more monolithic pieces clamped or bonded together is not considered monolithic as used herein.
The term 'plurality of monolithic, contiguous segments' means a monolithic plurality of continuous segments oriented in a non-linear manner; e.g., like a 'potato peel.'
The term 'in-plane' means in the plane containing the length, L, dimension of the monolithic PZT actuator.
The term 'about' means the amount of the specified quantity plus/minus a fractional amount (e.g., +10%, ±9%, ±8%, ±7%, +6%, ±5%, ±4%, +3%, ±2%, +1%, etc.) thereof that a person skilled in the art would recognize as typical and reasonable for that particular quantity or measurement.
The term 'substantially' means as close to or similar to the specified term being modified as a person skilled in the art would recognize as typical and reasonable; for e.g., within typical manufacturing and/or assembly tolerances, as opposed to being intentionally different by design and implementation or. For example, the claimed term "...an operative condition of substantially only in-plane motion" means measurable in-plane motion and de-minimus, if any, out-of-plane motion.
SUMMARY An aspect of the invention is a monolithic piezoelectric actuator. In an embodiment, the piezoelectric actuator includes a bulk piezoelectric substrate having a starting top surface and an opposing starting bottom surface; and a plurality of electrodes operatively disposed on the bulk piezoelectric substrate consisting of a plurality of discrete electrodes disposed on at least one of the starting top surface and the starting bottom surface and at least one electrode disposed on the at least one of the respective starting bottom surface and the starting top surface. According to various exemplary, non-limiting embodiments, the piezoelectric actuator may include the following additional features, limitations, and/or characteristics, alone or in combination:
-wherein the piezoelectric actuator is characterized by an operative condition of substantially only in-plane motion;
-wherein the piezoelectric actuator is characterized by a width, W, a height, H, and a length, L, where W is less than or about equal to H to enable high aspect ratio piezoelectric beam structures;
-wherein the piezoelectric actuator is comprised of a plurality of monolithic, contiguous segments, each next adjoining segment of which has an in-plane orientation along the length, L, that is different than that of its respective prior segment by between greater than zero degrees to + 90 degrees;
-wherein the piezoelectric actuator has a curvilinear length dimension;
-wherein the bulk piezoelectric substrate has at least one intermediate surface;
-wherein the bulk piezoelectric substrate is asymmetric in the H direction;
-wherein the bulk piezoelectric substrate is characterized by an operative condition comprising an out-of-plane twisting motion.
An aspect of the invention is a method for monolithically making a piezoelectric actuator. In an embodiment, the method includes the steps of providing a bulk piezoelectric (PZT) material that includes an electrode disposed on a starting top surface thereof and on an opposing starting bottom surface thereof; and using a direct write micropatterning technique to remove at least a portion of the electrode on at least one of the starting top surface and the starting bottom surface, such that the monolithic, bulk PZT material comprises a plurality of electrodes consisting of a plurality of discrete electrodes on the at least one of the starting top surface and the starting bottom surface and at least one electrode on the at least one of the respective starting bottom surface and the starting top surface. According to various exemplary, non-limiting
embodiments, the method may include the following additional steps, features, limitations, and/or characteristics, alone or in combination:
-wherein the direct write (maskless) micropatterning technique includes at least one of laser micromachining, water-jet drilling, ultrasonic drilling, electrical discharge machining, laser- assisted etching, and micro-CNC machining;
-further comprising removing at least a portion of at least one of the non-electrode containing starting top surface and the non-electrode containing starting bottom surface to form at least one non-electrode containing intermediate surface;
-comprising forming asymmetric intermediate surfaces in the respective non-electrode containing regions of the starting top surface and the starting bottom surface;
-comprising forming the monolithic piezoelectric actuator into a beam shape in a length, L, direction characterized by a width, W and a height, H, where W is less than or about equal to H and W, H « L;
-comprising forming the monolithic piezoelectric actuator into a plurality of monolithic, contiguous segments, each next adjoining segment of which has an in-plane orientation along the length, L, that is different than that of its respective prior segment by between greater than zero degrees to + 90 degrees;
-comprising forming the monolithic piezoelectric actuator into a curvilinear shape along the length, L, direction.
An aspect of the invention is a stage. According to an embodiment, the stage includes a PZT base; a plurality of the piezoelectric actuators as described immediately herein above disposed on the base; a movable platform disposed on the base; and a plurality of deformable connectors each having a first connection to a respective one of the plurality of piezoelectric actuators and a second connection to a respective portion of the movable platform, wherein the stage is electrically controllable. According to various exemplary, non-limiting embodiments, the piezoelectric actuator may include the following additional features, limitations, and/or characteristics, alone or in combination: -wherein each of the plurality of the piezoelectric actuators are characterized by an operative condition of substantially only in-plane motion;
-wherein each of the plurality of the piezoelectric actuators are characterized by a width, W, a height, H, and a length, L, where W is less than or about equal to H;
-wherein each of the plurality of the piezoelectric actuators is comprised of a plurality of monolithic, contiguous segments, each next adjoining segment of which has an in-plane orientation along the length, L, that is different than that of its respective prior segment by between greater than zero degrees to + 90 degrees;
-wherein each of the bulk piezoelectric actuators has a curvilinear length dimension; -wherein the bulk piezoelectric substrate of each of the plurality of the piezoelectric actuators has at least one intermediate surface;
-wherein each of the bulk piezoelectric substrates is asymmetric in the H direction;
-wherein each of the bulk piezoelectric substrates is characterized by an operative condition comprising an out-of-plane twisting motion;
-wherein the moveable platform is PZT;
-wherein the moveable PZT platform integrally comprises a monolithic, bulk PZT device;
-wherein the monolithic, bulk PZT device is at least one of a sensor, a gyroscope, an accelerometer, and an energy harvester;
-further comprising a monolithic, bulk PZT device mounted on the moveable platform;
-wherein the monolithic, bulk PZT device is at least one of a sensor, a gyroscope, an accelerometer, and an energy harvester.
An aspect of the invention is a method for making a stage as described immediately herein above. The method includes the steps of providing a plurality of the piezoelectric actuators as described herein above; providing a moveable PZT platform; providing a respective plurality of deformable connectors each having a first connection to a respective one of the plurality of piezoelectric actuators and a second connection to a respective portion of the movable platform. According to various exemplary, non-limiting embodiments, the method may include the following additional steps, features, limitations, and/or characteristics, alone or in combination: -forming a monolithic, bulk PZT device in the moveable PZT platform. It should be appreciated that all combinations of the foregoing steps, features, limitations, and/or characteristics, and additional aspects and embodiments discussed in greater detail below (provided such concepts are not mutually inconsistent) are contemplated as being part of the inventive subject matter disclosed herein. In particular, all combinations of claimed subject matter appearing at the end of this disclosure are contemplated as being part of the inventive subject matter disclosed herein. It should also be appreciated that terminology explicitly employed herein that also may appear in any disclosure incorporated by reference should be accorded a meaning most consistent with the particular concepts disclosed herein.
BRIEF DESCRIPTION OF THE FIGURES
Fig 1: (a) schematically shows the process flow used for fabricating a Bulk PZT bimorph; (b) shows an image of a fabricated 10 mm long, 0.45 mm wide, 0.5 mm thick bulk PZT bimorph for in-plane actuation; (c) schematically shows a top view of the bulk PZT bimorph unactuated (left) and actuated for lateral, in-plane deflection (right), according to illustrative embodiments of the invention.
Fig. 2: (a) shows a schematic cross sectional view of a monolithic piezoelectric actuator in which the non-electrode containing starting top surface has been direct write micropatterned to form a non-electrode containing intermediate surface; (b) shows a schematic cross sectional view of a monolithic piezoelectric actuator in which the non-electrode containing starting bottom surface has been direct write micropatterned to form a non-electrode containing intermediate surface; (c) shows a schematic cross sectional view of a monolithic piezoelectric actuator in which the non- electrode containing starting top surface and the non-electrode containing starting top surface have been direct write micropatterned to form non-symmetrical, non-electrode containing intermediate surfaces, according to illustrative aspects of the invention.
Fig. 3 schematically illustrates in a top view a two section monolithic, contiguous PZT bimorph in an unactuated (top) and an actuated (bottom) state for providing in-plane deflection, according to an illustrative aspect of the invention. Fig. 4 shows a photograph of a stage comprising a base, a rotatable platform, four quadratically positioned monolithic, contiguous PZT bimorph actuators, and four respective springs each connected to an actuator and the rotatable platform, according to an exemplary embodiment of the invention. A device is shown mounted on the rotatable platform.
Fig. 5 schematically illustrates a four actuator stage (center), a cross sectional view of one of the monolithic PZT actuators comprising the stage (lower left), a table showing a positive or a negative voltage that can be applied to the numbered electrodes VI- V8 of the four PZT actuators to achieve a desired motion, and a graph showing angular and linear speeds of the actuators depending on the provided excitation, according to illustrative aspects of the invention.
Fig. 6: a) Cross sectional view of capacitors formed by selective depolarization of PZT; b) Capacitor in use as part of the associated electronic circuitry, according to illustrative aspects of the invention.
Fig. 7 schematically illustrates a monolithic, piezoelectric gyroscope design according to an illustrative aspect of the invention.
Fig. 8 shows a monolithically fabricated piezoelectric gyroscope (Fig. 7) placed in a DIP package (left), and mounting the piezoelectric gyroscope on the rotatable (dither) platform of the stage, according to illustrative aspects of the invention.
DETAILED DESCRIPTION OF NON-LIMITING, EXEMPLARY EMBODIMENTS An embodiment of the invention is a monolithic, bulk piezoelectric actuator 100-1 capable of in- plane (lateral) motion with substantially no out-of-plane (transverse) motion, as illustrated, respectively, in Figs, la and lc. Referring to Fig. la, the bulk piezoelectric actuator 100-1 is derived from a commercially available bulk PZT and consists of a bulk PZT material 101 and electrodes 102T and 102B on top and bottom surfaces, respectively, of the bulk PZT material 101. Fig la also schematically shows the process flow used for fabricating the monolithic, bulk PZT actuator 100-1 from the monolithic, bulk PZT plate 100. As further illustrated in the lower left 'Initial Cross Section AA' diagram of Fig. la, the top and bottom electrodes 102χ and 102B are provided on what are referred to as the starting top surface 108 and the starting bottom surface 109 of the bulk PZT plate 100. As further illustrated in the diagrams along the top of Fig. la, a direct write micropatterning technique is used on the bulk PZT plate 100 to remove a portion of the starting top surface electrode 102χ and a portion of the starting bottom surface electrode 102b, such that the monolithic, bulk PZT material 100 now comprises two discrete electrodes 102a, 102b on the starting top surface and two discrete electrodes 102c, 102d on the starting bottom surface resulting in monolithic, bulk PZT actuator 100-1.
It is to be appreciated that although two discrete electrodes on each of the starting top surface and the starting bottom surface are shown, the invention contemplates an operable monolithic, bulk PZT actuator having at least two discrete electrodes disposed on at least one of the starting top surface and the starting bottom surface and at least one electrode disposed on the other respective starting bottom surface and starting top surface. When there are no intermediate PZT surfaces (described further below) the embodied actuator exhibits substantially only lateral (i.e., in the plane of the length, L, direction) motion (see Fig. lc) upon application of a voltage.
Further as illustrated in Fig. lc, the monolithic, bulk PZT actuator is in the geometry of a beam; i.e., having a cross sectional width, W and Height, H, where W is less than or about equal to H, and a length, L, where L is much greater than W or H.
Referring again to Fig. la, it schematically illustrates a method for monolithically making a piezoelectric actuator. As shown from left to right, a bulk piezoelectric (PZT) material that includes an electrode disposed on a starting top surface thereof and on an opposing starting bottom surface thereof is provided. A direct write micropatterning technique is used to remove at least a portion of the electrode on at least one of the starting top surface and the starting bottom surface, such that the monolithic, bulk PZT material comprises a plurality of electrodes consisting of a plurality of discrete electrodes on the at least one of the starting top surface and the starting bottom surface and at least one electrode on the at least one of the respective starting bottom surface and the starting top surface. The direct write (maskless) micropatterning technique includes at least one of laser micromachining, water-jet drilling, ultrasonic drilling, electrical discharge machining, laser-assisted etching, and micro-CNC machining. The direct write technique allows precision removal of PZT and/or electrode material, optionally with double-side (top-bottom) alignment capability.
Electrical excitation of electrodes patterned on the PZT plate generates motion, whose direction and amplitude are controlled by the polarity and magnitudes of electrical potentials on the electrodes formed on the device. An advantageous feature of the embodied invention is that it allows monolithic fabrication of actuators from commercially available piezoelectric plates without any mask making, lithography, or electrode deposition step, all of which increase the time and cost of manufacture. Furthermore, the ability to double side align the electrodes can yield almost doubling of the actuator displacements in certain actuation arrangements, and allows more complex displacement vectors at the tip due to an additional electrode formed on the back side.
Fig. lb shows an image of a fabricated 10 mm long, 0.45 mm wide, 0.5 mm thick bulk PZT bimorph (two electrodes top and bottom) for in-plane actuation.
The direct write micropatterning technique can also be advantageously employed to created intermediate PZT material surfaces (211, 212, 213, 214, others) as illustrated in Figs. 2(a, b, c). Depending upon the number of discrete electrodes on the starting top and bottom surfaces of the bulk PZT, the monolithic, bulk PZT actuators having symmetric or asymmetric, electrodeless intermediate surfaces can provide both controllable in-plane and/or out-of-plane (planar and/or twisting) motion(s) depending upon starting surface electrode number, sizes, and applied voltages. It will be appreciated that according to the embodied invention, electrodes are only disposed on the starting top and bottom surfaces and never on any of the intermediate PZT surfaces. Still further advantageously as illustrated in Fig. 3, the monolithic, bulk PZT actuator 301 can be fabricated into a plurality of contiguous segments 301n (two segments 301nl, 301n2 shown), such that when voltage is applied, the actuator experiences in-plane (plane of the paper) motion. As illustrated, subsequent segment 3012 is oriented (in-plane) at an angle of 90 degrees from preceding segment 301 ^ however, it is to be appreciated that the angle between adjoining contiguous segments can be any angle between greater than zero degrees to + 90 degrees. The plurality of segments may also proceed in a curve manner such as an in-plane 'potato peel' shape.
Fig. 4 shows a stage 400 that includes a base 406, a plurality (four shown) of multi-segment (3011 , 3012, 3013, etc.), monolithic, bulk PZT actuators 401 piezoelectric actuators disposed quadratically on and about the base, a movable platform 407 disposed on the base, and a plurality (four shown) of deformable connectors 412 each having a first connection 412a to a respective one of the plurality of piezoelectric actuators 401 and a second connection 412b to a respective portion of the movable platform 407. Electrode connections are also illustrated. The multi- segment, monolithic, bulk PZT actuators 401 can be of the no-intermediate surface type (Fig. 1) or of the electrodeless-intermediate surface type (Fig. 2).
Fig. 5 illustrates a stage 501 that schematically shows an actuator or actuator segment in cross section. The illustrated actuator or actuator segment has two electrodes each on the starting top and bottom surfaces of the bulk PZT and no intermediate surfaces. The table in Fig. 5 illustrates controllable motion control of the actuators and thus of the moveable platform by virtue of the voltage polarity applied to each of the electrodes.
As mentioned hereinabove, it would be advantageous to integrate passive electrical components such as capacitors, resistors, and inductors into a device (e.g., sensor) mounted on or in the rotatable platform of the piezoelectric motion stage as embodied herein, for buffering and filtering electronic signals. Fig. 6a shows a cross sectional view of capacitors formed by selective depolarization of PZT. Fig. 6b similarly shows a capacitor in use as part of the associated electronic circuitry. The same direct write micropatterning technique and process flow as used for monolithically fabrication the embodied bulk, monolithic piezoelectric actuators can be used to form the electrical components.
In addition to a sensor, one may wish to have a piezoelectric device, including but not limited to piezoelectric gyroscopes, accelerometers, and energy harvesters, mounted on or integrally formed in the rotatable platform of the motion stage. From cost and integration standpoints, it would be especially advantageous and beneficial to form these components directly,
monolithically in a PZT material, co-fabricated with the motion stage, using direct write micropatterning, with the lateral actuator as the elemental component. Fig. 7 schematically illustrates an illustrative direct write micropatterned monolithic, piezoelectric gyroscope. Fig. 8 shows the monolithically fabricated gyroscope incorporated into a piezoelectric rotatable (dither) platform of the motion stage, as illustrated in Figs. 4 and 5. Monolithic integration of a piezoelectric device on a stage suspended far from the stage's base also allows thermal isolation of the device. This is useful for thermal actuation and sensing applications of bulk- PZT, which relies on generation or sustaining of large temperature gradients between the stage's base and the device.
While several inventive embodiments have been described and illustrated herein, those of ordinary skill in the art will readily envision a variety of other means and/or structures for performing the function and/or obtaining the results and/or one or more of the advantages described herein, and each of such variations and/or modifications is deemed to be within the scope of the inventive embodiments described herein. More generally, those skilled in the art will readily appreciate that all parameters, dimensions, materials, and configurations described herein are meant to be exemplary and that the actual parameters, dimensions, materials, and/or configurations will depend upon the specific application or applications for which the inventive teachings is/are used. Those skilled in the art will recognize, or be able to ascertain using no more than routine experimentation, many equivalents to the specific inventive embodiments described herein. It is, therefore, to be understood that the foregoing embodiments are presented by way of example only and that, within the scope of the appended claims and equivalents thereto, inventive embodiments may be practiced otherwise than as specifically described and claimed. Inventive embodiments of the present disclosure are directed to each individual feature, system, article, material, kit, and/or method described herein. In addition, any combination of two or more such features, systems, articles, materials, kits, and/or methods, if such features, systems, articles, materials, kits, and/or methods are not mutually inconsistent, is included within the inventive scope of the present disclosure.
All definitions, as defined and used herein, should be understood to control over dictionary definitions, definitions in documents incorporated by reference, and/or ordinary meanings of the defined terms.
The indefinite articles "a" and "an," as used herein in the specification and in the claims, unless clearly indicated to the contrary, should be understood to mean "at least one."
The phrase "and/or," as used herein in the specification and in the claims, should be understood to mean "either or both" of the elements so conjoined, i.e., elements that are conjunctively present in some cases and disjunctively present in other cases. Multiple elements listed with "and/or" should be construed in the same fashion, i.e., "one or more" of the elements so conjoined. Other elements may optionally be present other than the elements specifically identified by the "and/or" clause, whether related or unrelated to those elements specifically identified. Thus, as a non-limiting example, a reference to "A and/or B", when used in conjunction with open-ended language such as "comprising" can refer, in one embodiment, to A only (optionally including elements other than B); in another embodiment, to B only (optionally including elements other than A); in yet another embodiment, to both A and B (optionally including other elements); etc.
As used herein in the specification and in the claims, "or" should be understood to have the same meaning as "and/or" as defined above. For example, when separating items in a list, "or" or "and/or" shall be interpreted as being inclusive, i.e., the inclusion of at least one, but also including more than one, of a number or list of elements, and, optionally, additional unlisted items. Only terms clearly indicated to the contrary, such as "only one of or "exactly one of," or, when used in the claims, "consisting of," will refer to the inclusion of exactly one element of a number or list of elements. In general, the term "or" as used herein shall only be interpreted as indicating exclusive alternatives (i.e. "one or the other but not both") when preceded by terms of exclusivity, such as "either," "one of," "only one of," or "exactly one of." "Consisting essentially of," when used in the claims, shall have its ordinary meaning as used in the field of patent law.
As used herein in the specification and in the claims, the phrase "at least one," in reference to a list of one or more elements, should be understood to mean at least one element selected from any one or more of the elements in the list of elements, but not necessarily including at least one of each and every element specifically listed within the list of elements and not excluding any combinations of elements in the list of elements. This definition also allows that elements may optionally be present other than the elements specifically identified within the list of elements to which the phrase "at least one" refers, whether related or unrelated to those elements specifically identified. Thus, as a non-limiting example, "at least one of A and B" (or, equivalently, "at least one of A or B," or, equivalently "at least one of A and/or B") can refer, in one embodiment, to at least one, optionally including more than one, A, with no B present (and optionally including elements other than B); in another embodiment, to at least one, optionally including more than one, B, with no A present (and optionally including elements other than A); in yet another embodiment, to at least one, optionally including more than one, A, and at least one, optionally including more than one, B (and optionally including other elements); etc.
It should also be understood that, unless clearly indicated to the contrary, in any methods claimed herein that include more than one step or act, the order of the steps or acts of the method is not necessarily limited to the order in which the steps or acts of the method are recited.
In the claims, as well as in the specification above, all transitional phrases such as "comprising," "including," "carrying," "having," "containing," "involving," "holding," "composed of," and the like are to be understood to be open-ended, i.e., to mean including but not limited to. Only the transitional phrases "consisting of and "consisting essentially of shall be closed or semi-closed transitional phrases, respectively, as set forth in the United States Patent Office Manual of Patent Examining Procedures, Section 2111.03.

Claims

We claim:
1. A monolithic piezo actuator, comprising:
a bulk piezoelectric substrate having a starting top surface and an opposing starting bottom surface; and
a plurality of electrodes operatively disposed on the bulk piezoelectric substrate, consisting of:
a plurality of discrete electrodes disposed on at least one of the starting top surface and the starting bottom surface and at least one electrode disposed on the at least one of the respective starting bottom surface and the starting top surface.
2. The piezoelectric actuator of claim 1, characterized by an operative condition of substantially only in-plane motion.
3. The piezoelectric actuator of claim 1, characterized by a width, W, a height, H, and a length, L, where W is less than or about equal to H to enable high aspect ratio piezoelectric beam structures.
4. The piezoelectric actuator of claim 3, wherein the piezoelectric actuator is comprised of a plurality of monolithic, contiguous segments, each next adjoining segment of which has an in- plane orientation along the length, L, that is different than that of its respective prior segment by between greater than zero degrees to + 90 degrees.
5. The piezoelectric actuator of claim 1, wherein the bulk piezoelectric substrate has at least one intermediate surface.
6. The piezoelectric actuator of claim 5, wherein the bulk piezoelectric substrate is asymmetric in the H direction.
7. The piezoelectric actuator of claim 5, characterized by an operative condition comprising an out-of-plane twisting motion.
8. The piezoelectric actuator of claim 3, wherein the piezoelectric actuator has a curvilinear length dimension.
9. A stage, comprising:
a PZT base;
a plurality of the piezoelectric actuators of claim 1 disposed on the base;
a movable platform disposed on the base; and
a plurality of deformable connectors each having a first connection to a respective one of the plurality of piezoelectric actuators and a second connection to a respective portion of the movable platform,
wherein the stage is electrically controllable.
10. The stage of claim 9, wherein each of the plurality of the piezoelectric actuators are characterized by an operative condition of substantially only in-plane motion.
11. The stage of claim 9, wherein each of the plurality of the piezoelectric actuators are characterized by a width, W, a height, H, and a length, L, where W is less than or about equal to H.
12. The stage of claim 11, wherein each of the plurality of the piezoelectric actuators is comprised of a plurality of monolithic, contiguous segments, each next adjoining segment of which has an in-plane orientation along the length, L, that is different than that of its respective prior segment by between greater than zero degrees to + 90 degrees.
13. The stage of claim 9, wherein the bulk piezoelectric substrate of each of the plurality of the piezoelectric actuators has at least one intermediate surface.
14. The stage of claim 13, wherein each of the bulk piezoelectric substrates is asymmetric in the H direction.
15. The stage of claim 13, wherein each of the bulk piezoelectric substrates is characterized by an operative condition comprising an out-of-plane twisting motion.
16. The stage of claim 11, wherein each of the bulk piezoelectric actuators has a curvilinear length dimension.
17. The stage of claim 9, wherein the moveable platform is PZT.
18. The stage of claim 17, wherein the moveable PZT platform integrally comprises a monolithic, bulk PZT device.
19. The stage of claim 18, wherein the monolithic, bulk PZT device is at least one of a sensor, a gyroscope, an accelerometer, and an energy harvester.
20. The stage of claim 9, further comprising a monolithic, bulk PZT device mounted on the moveable platform.
21. The stage of claim 20, wherein the monolithic, bulk PZT device is at least one of a sensor, a gyroscope, an accelerometer, and an energy harvester.
22. A method for monolithically making a piezoelectric actuator, comprising:
providing a bulk piezoelectric (PZT) material that includes an electrode disposed on a starting top surface thereof and on an opposing starting bottom surface thereof; and using a direct write micropatterning technique to remove at least a portion of the electrode on at least one of the starting top surface and the starting bottom surface, such that the monolithic, bulk PZT material comprises a plurality of electrodes consisting of a plurality of discrete electrodes on the at least one of the starting top surface and the starting bottom surface and at least one electrode on the at least one of the respective starting bottom surface and the starting top surface.
23. The method of claim 22, wherein the direct write (maskless) micropatterning technique includes at least one of laser micromachining, water-jet drilling, ultrasonic drilling, electrical discharge machining, laser-assisted etching, and micro-CNC machining.
24. The method of claim 22, further comprising removing at least a portion of at least one of the non-electrode containing starting top surface and the non-electrode containing starting bottom surface to form at least one non-electrode containing intermediate surface.
25. The method of claim 24, comprising forming asymmetric intermediate surfaces in the respective non-electrode containing regions of the starting top surface and the starting bottom surface.
26. The method of claim 22, comprising forming the monolithic piezoelectric actuator into a beam shape in a length, L, direction characterized by a width, W and a height, H, where W is less than or about equal to H and W, H « L.
27. The method of claim 22, comprising forming the monolithic piezoelectric actuator into a plurality of monolithic, contiguous segments, each next adjoining segment of which has an in- plane orientation along the length, L, that is different than that of its respective prior segment by between greater than zero degrees to + 90 degrees.
28. The method of claim 22, comprising forming the monolithic piezoelectric actuator into a curvilinear shape along the length, L, direction.
29. A method for making a stage, comprising:
providing a plurality of the actuators according to claim 22;
providing a moveable PZT platform; providing a respective plurality of deformable connectors each having a first connection to a respective one of the plurality of piezoelectric actuators and a second connection to a respective portion of the movable platform.
30. The method of claim 29, further comprising forming a monolithic, bulk PZT device in the moveable PZT platform.
PCT/US2014/034620 2013-04-18 2014-04-18 Monolithic pzt actuator, stage, and method for making WO2014172617A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/785,442 US10158063B2 (en) 2013-04-18 2014-04-18 Monolithic PZT actuator, stage, and method for making
US16/222,243 US20190214543A1 (en) 2013-04-18 2018-12-17 Monolithic pzt actuator, stage, and method for making

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361813498P 2013-04-18 2013-04-18
US61/813,498 2013-04-18

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/785,442 A-371-Of-International US10158063B2 (en) 2013-04-18 2014-04-18 Monolithic PZT actuator, stage, and method for making
US16/222,243 Continuation US20190214543A1 (en) 2013-04-18 2018-12-17 Monolithic pzt actuator, stage, and method for making

Publications (1)

Publication Number Publication Date
WO2014172617A1 true WO2014172617A1 (en) 2014-10-23

Family

ID=51731867

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/034620 WO2014172617A1 (en) 2013-04-18 2014-04-18 Monolithic pzt actuator, stage, and method for making

Country Status (2)

Country Link
US (2) US10158063B2 (en)
WO (1) WO2014172617A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017075569A1 (en) * 2015-10-29 2017-05-04 Cornell University Inertial measurement unit calibration stage, method, and applications
CN111245290A (en) * 2020-01-20 2020-06-05 哈尔滨工业大学 Single-degree-of-freedom piezoelectric turntable and excitation method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10324494B2 (en) 2015-11-25 2019-06-18 Intel Corporation Apparatus for detecting electromagnetic field change in response to gesture

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040244167A1 (en) * 2002-05-28 2004-12-09 Ngk Insulators, Ltd. Piezoelectric/electrostrictive film type actuator and method for manufacturing the same
US6909221B2 (en) * 2002-08-01 2005-06-21 Georgia Tech Research Corporation Piezoelectric on semiconductor-on-insulator microelectromechanical resonators
US20070252485A1 (en) * 2005-12-28 2007-11-01 Takashi Kawakubo Thin-film piezoelectric resonator and filter circuit
JP2009189194A (en) * 2008-02-08 2009-08-20 Brother Ind Ltd Actuator and method of manufacturing the same
US20100045142A1 (en) * 2008-08-21 2010-02-25 Us Government As Represented By Secretary Of The Army Negative vertical deflection piezoelectric mems actuators and method of fabrication

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2373431A (en) * 1943-03-30 1945-04-10 Bell Telephone Labor Inc Electric wave filter
US3487239A (en) * 1968-12-10 1969-12-30 Motorola Inc Piezoelectric transformer
SE436675B (en) * 1975-08-12 1985-01-14 Ki Politekhnichsky I Im 50 Let ELECTRIC ENGINE OPERATED BY PIEZOELECTRIC FORCES
US5043621A (en) * 1988-09-30 1991-08-27 Rockwell International Corporation Piezoelectric actuator
US6327120B1 (en) * 1997-04-17 2001-12-04 Fujitsu Limited Actuator using piezoelectric element and head-positioning mechanism using the actuator
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
US7459834B2 (en) * 2005-06-22 2008-12-02 Qortek, Inc. Solid state gimbal system
JP2007005635A (en) * 2005-06-24 2007-01-11 Toshiba Corp Semiconductor device
US7501743B2 (en) * 2006-04-28 2009-03-10 The Penn State Research Foundation Piezoelectric ultrasonic motor for 2-dimensional positioning
JP5191939B2 (en) * 2009-03-31 2013-05-08 スタンレー電気株式会社 Actuator device for optical deflector
US8767355B2 (en) * 2012-01-19 2014-07-01 Agency For Science, Technology And Research Piezoelectric actuator, head gimbal assembly including the same and method of forming the same
JP5524254B2 (en) * 2012-02-14 2014-06-18 富士フイルム株式会社 Mirror drive device and control method thereof
US9705425B2 (en) * 2012-07-03 2017-07-11 Discovery Technology International, Inc. Piezoelectric linear motor
US10263173B2 (en) * 2015-01-16 2019-04-16 The Regents Of The University Of Michigan Multi-axis piezoelectric transducer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040244167A1 (en) * 2002-05-28 2004-12-09 Ngk Insulators, Ltd. Piezoelectric/electrostrictive film type actuator and method for manufacturing the same
US6909221B2 (en) * 2002-08-01 2005-06-21 Georgia Tech Research Corporation Piezoelectric on semiconductor-on-insulator microelectromechanical resonators
US20070252485A1 (en) * 2005-12-28 2007-11-01 Takashi Kawakubo Thin-film piezoelectric resonator and filter circuit
JP2009189194A (en) * 2008-02-08 2009-08-20 Brother Ind Ltd Actuator and method of manufacturing the same
US20100045142A1 (en) * 2008-08-21 2010-02-25 Us Government As Represented By Secretary Of The Army Negative vertical deflection piezoelectric mems actuators and method of fabrication

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017075569A1 (en) * 2015-10-29 2017-05-04 Cornell University Inertial measurement unit calibration stage, method, and applications
US11340251B2 (en) 2015-10-29 2022-05-24 Cornell University Inertial measurement unit calibration stage, method, and applications
CN111245290A (en) * 2020-01-20 2020-06-05 哈尔滨工业大学 Single-degree-of-freedom piezoelectric turntable and excitation method thereof

Also Published As

Publication number Publication date
US20190214543A1 (en) 2019-07-11
US20160072041A1 (en) 2016-03-10
US10158063B2 (en) 2018-12-18

Similar Documents

Publication Publication Date Title
Todaro et al. Piezoelectric MEMS vibrational energy harvesters: Advances and outlook
Eom et al. Thin-film piezoelectric MEMS
JP3521499B2 (en) Piezoelectric / electrostrictive film type element
Yen et al. Corrugated aluminum nitride energy harvesters for high energy conversion effectiveness
US20190214543A1 (en) Monolithic pzt actuator, stage, and method for making
US7876026B2 (en) Large force and displacement piezoelectric MEMS lateral actuation
JP2006518094A (en) BENDING ACTUATOR AND SENSOR COMPOSED OF MODELING ACTIVE MATERIAL AND METHOD FOR PRODUCING THEM
KR20220130720A (en) MEMS transducer with improved performance
Hong et al. Design of MEMS PZT circular diaphragm actuators to generate large deflections
Zhou et al. Analysis and design of a self-powered piezoelectric microaccelerometer
EP1932803B1 (en) MEMS device with Z-axis asymetry
JP4114321B2 (en) Inkjet printer head and piezoelectric / electrostrictive actuator for inkjet printer head
JPH10209517A (en) Piezoelectric element
Sabri et al. Fabrication and characterization of microstacked PZT actuator for MEMS applications
Toprak et al. Micron scale energy harvesters using multiple piezoelectric polymer layers
KR101659127B1 (en) Manufacturing method of piezoelectric actuator module
JP2010283038A (en) Piezoelectric actuator and method of manufacturing the same
JP2000317898A (en) Piezoelectric/electrostrictive device
JP4636086B2 (en) Vibrator and manufacturing method thereof
US20150188029A1 (en) Piezoelectric actuator module, method of manufacturing the same, and mems sensor having the same
EP4233099A1 (en) Piezoelectric device comprising flexible single crystalline piezoelectric linbo3 and/or litao3 films integrated on flexible substrate and methods for producing the same
Gao et al. A piezoelectric micro-actuator with a three-dimensional structure and its micro-fabrication
US20150143914A1 (en) Piezoelectric actuator module and mems sensor having the same
JP2009170631A (en) Piezoelectric element and method of manufacturing the same, and piezoelectric application device using the same
JP2008067539A (en) Ultrasonic actuator and method of manufacturing its vibrator

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14784632

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 14785442

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 14784632

Country of ref document: EP

Kind code of ref document: A1