WO2014150263A1 - Impression d'une substance fluorescente sur une plaquette de del par lithographie sur pellicule sèche - Google Patents

Impression d'une substance fluorescente sur une plaquette de del par lithographie sur pellicule sèche Download PDF

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Publication number
WO2014150263A1
WO2014150263A1 PCT/US2014/022745 US2014022745W WO2014150263A1 WO 2014150263 A1 WO2014150263 A1 WO 2014150263A1 US 2014022745 W US2014022745 W US 2014022745W WO 2014150263 A1 WO2014150263 A1 WO 2014150263A1
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WO
WIPO (PCT)
Prior art keywords
phosphor
containing material
led
led dies
template
Prior art date
Application number
PCT/US2014/022745
Other languages
English (en)
Inventor
Zequn Mei
Xiantao Yan
Original Assignee
Ledengin, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/842,127 external-priority patent/US8900892B2/en
Application filed by Ledengin, Inc. filed Critical Ledengin, Inc.
Publication of WO2014150263A1 publication Critical patent/WO2014150263A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • the present invention relates in general to light-emitting diodes (LEDs) and in particular to deposition of phosphor-containing material on LED dies on a wafer.
  • LEDs are a promising technology and are already widely deployed for specific purposes, such as traffic signals and flashlights.
  • an LED chip is often combined with a wavelength-converting material to obtain desired output light color.
  • yellow phosphors are often combined with blue LEDs to produce white light.
  • the development of LED-based lamps for general illumination has run into various difficulties. Among these is the difficulty of
  • LED emitters with phosphors that provide a consistent light color.
  • Conventional LED emitters often include an LED die in a recess or cup structure that has phospho -containing material in the cup. In some cases, the phosphor-containing material is separated from the LED die by, for example, a silicone material.
  • These conventional methods tend suffer from many drawbacks. For example, conventional methods often use a large amount of phosphor, and they may cause poor cooling of the phosphor and the silicone material. As a result, the emitter can suffer from less reliable packaging and non-uniform angular distribution of light color. Given existing processes for LED manufacture, mass-producing white LEDs with a consistent color temperature has proven to be a challenge.
  • Embodiments of the present invention relate to methods for placing controlled amount of phosphor-containing material on top of LED dies formed on a substrate, such as a semiconductor wafer.
  • a patterned photoresist can be used to mask out areas of the wafer and the LED dies where no phosphor-containing material is desired.
  • the phosphor-containing material of suitable viscosity is applied, e.g., by printing, and then excess material is removed using the template as a guide, if needed.
  • the size of the opening limits the phosphor-containing material to only the exposed top surface of the LED dies, and the height of the template help control the thickness of the phosphor-containing material.
  • the methods described herein have many advantages that can be achieved over conventional techniques.
  • the methods use conventional equipment and processes and are suitable for cost-effective mass production.
  • the phosphor usage is reduced, since phosphor is placed only on the top surface of the LED die. Heat generated in the phosphor material can be dissipated through the LED die, and better cooling can reduce the temperature of the phosphor and the silicone material and lead to more reliable package.
  • a conventional method of placing phosphor on die top involves using a syringe to place liquid droplets of phosphor material.
  • One drawback of this method is that the liquid mixture tends to settle and can lead to color shifting.
  • the mixture of phosphor-containing material is formed to desired viscosity before being applied to the plurality of LED dies on the wafer.
  • a method for depositing a layer of phosphor-containing material on a plurality of LED (fight-emitting diode) dies on a wafer includes disposing a layer of dry photoresist film over a plurality of LED dies on a wafer, disposing a mask layer over the dry photoresist film, and patterning the dry photoresist film to form a plurality of openings in the dry photoresist film to expose a top surface of each
  • the method also includes depositing a phosphor-containing material on the exposed top surface of each the LED dies using a screen printing process, and removing the patterned dry photoresist film.
  • the patterned dry photoresist film is configured to cover bond pad areas on the LED dies.
  • a depth of the openings in the photoresist layer is equal to a desired thickness of the phosphor-containing material.
  • depositing the phosphor-containing material in each of the openings in the patterned dry resist film includes depositing the phosphor-containing material on the patterned photoresist layer and the LED dies, and removing the phosphor-containing material from the top surface of the photoresist layer and on the top surface of the LED dies that protrudes above the top surface of the patterned resist.
  • depositing the phosphor-containing material in each of the openings in the photoresist layer comprises using a screen printing method.
  • the plurality of LEDs is formed on a semiconductor substrate, for example, a silicon wafer , a silicon carbide (SiC) substrate, or a Sapphire (AI2O 3 ) substrate.
  • a method for depositing a layer of phosphor-containing material on a plurality of LED (light-emitting diode) dies on a substrate includes forming a patterned photoresist layer over a plurality of LED dies on a substrate, the patterned photoresist layer having a plurality of openings configured to expose a top surface of each of the LED dies.
  • the method also includes depositing a phosphor- containing material on the exposed top surface of each the LED dies, and removing the photoresist layer.
  • forming the photoresist layer includes disposing a layer of dry photoresist film over the template, disposing a mask layer over the dry photoresist film, and forming a plurality of openings in the dry photoresist film.
  • depositing the phosphor-containing material in each of the openings in the photoresist layer comprises using a screen printing method.
  • the plurality of LEDs is formed on a semiconductor substrate. In a specific embodiment, the plurality of LEDs is formed on a silicon wafer.
  • a method for depositing a layer of phosphor-containing material on a plurality of LED (light- emitting diode) dies on a substrate includes forming a template over a plurality of LED dies on the substrate, the template having a plurality of openings configured to expose a top surface of each of the LED dies.
  • the method also includes depositing a phosphor-containing material on the exposed top surface of each the LED dies and removing the template.
  • the template is made of a material that can be selectively etched from the phosphor-containing material.
  • the template has a non-sticky surface such that the template can be removed from the deposited phosphor- containing material.
  • the template is a patterned dry photoresist film.
  • the plurality of LEDs is formed on a semiconductor substrate for example, a silicon wafer.
  • FIGS. 1 - 13 are cross-sectional diagrams illustrating a method for carrying out a method for phosphor deposition according to an embodiment of the present invention.
  • FIG. 1 shows a substrate for carrying out the method for phosphor deposition according to an embodiment of the present inv ention;
  • FIGS. 2 and 3 show a grid template for carrying out the method for phosphor deposition according to an embodiment of the present invention
  • FIG. 4 illustrates the process of LED chips being placed into the grid openings of the template
  • FIGS. 5(a)-5(e) illustrate the template openings being filled with LED chips and bond patterns on the LED chips
  • FIG. 6 illustrates a mask layout that can be used in patterning a photoresist film
  • FIG. 7 shows a dry film photoresist disposed over the template and the LED chips
  • FIG. 8 illustrates a process of exposing dry film photoresist using a photomask
  • FIG. 9 shows the patterned photoresist after a development process
  • FIG. 10 shows phosphor material deposited in openings of the photoresist patterns
  • FIG. 1 1 1 shows curing the intermediate structure including a glass plate, a template over the plate, LED chips disposed in openings in the template, a photoresist pattern with a phosphor-containing mixture filling its openings and over the exposed top surface of the LED chips;
  • FIG. 12 shows the structure in FIG. 1 1 with the photoresist removed;
  • FIG. 13 shows a structure including a plurality of separate LED dies attached to an adhesive tape, each of the LED dies having a layer of phosphor-containing material on the top surface;
  • FIG. 14 is a flowchart summarizing the method for depositing a layer of phosphor- containing material on a plurality of LED dies according to an embodiment of the present invention.
  • FIG. 15 is a flowchart summarizing a method for depositing a layer of phosphor- containing material on a plurality of LED (light-emitting diode) dies on a wafer according to an embodiment of the present invention
  • FIGS. 16-21 are simplified cross-sectional views illustrating a method for forming a phosphor containing material on LED dies on a wafer.
  • FIG. 1 shows a top view and a cross-sectional view of a substrate for carrying out the method for phosphor deposition.
  • An adhesive tape 110 is disposed on a glass plate 120.
  • the tape is a double-sided adhesive tape, which can be a thermal release or a UV release tape made of, e.g., polyester.
  • Tape 110 is attached to plate 120 the glass substrate.
  • plate 120 is about I mm thick. But plates having other suitable thicknesses can also be used.
  • a grid template 130 is disposed on the adhesive top side of tape 1 10.
  • the grid template includes openings arranged in a 6x6 array.
  • the grid template can have other grid patterns, e.g. 30x30.
  • the grid template is a metal plate with square openings. The opening is slightly larger than an LED chip size, and the plate thickness is the same as the LED chip thickness.
  • a specific example of the template 130 is shown in FIG. 3, where the size of the opening 132. is 0.95 mm by 0.95 mm for an LED chip of size 0.9 mm by 0.9 mm. In this example, the spacing between openings is 0.5 mm, and the plate thickness is 0.17 mm. Of course, these dimensions can be varied, [0033] In FIG. 4, individual LED chips 140 are placed into the grid openings.
  • FIG. 5(a) shows a top view of template 130 with LED chips 140 placed in the openings.
  • FIG. 5(b) shows a top view of an LED chip which includes bond pad areas 144 that will be shielded from the phosphor layer.
  • a dry film photoresist is used to protect bond pad areas, as described below.
  • FIG, 5 (c) shows a desired pattern for exposing the top surface of an LED chip for phosphor material deposition while protecting the bond pad areas.
  • dry film photoresist is used to mask out areas in the top surface of the LED dies, such as bond pad areas.
  • the Dupont, Riston series dry film resists have a thickness from 20 um to 100 um.
  • the Dupont resist has negative tone and needs UV light source for lithography.
  • the 416-DFR dry film resist from MG Chemicals are available in thicknesses from 1.5 to 2 mil.
  • the MG films are also negative tone, but they can use regular daylight fluorescent light bulb for lithography .
  • the dry film photoresist is often sandwiched between two films, a polyethylene film and a polyester film.
  • the area to be removed will be exposed and, therefore, appears as open areas in the mask, as illustrated in FIG. 5(c).
  • the areas to be removed in the mask is dark; an example of such a mask layout is shown in FIG. 6.
  • the mask artwork can be made using computer graphics software, and the artwork can be printed on a transparent film using, e.g., a laser printer.
  • the dry film resist 150 is laid over the template 130 with the LED chips 140.
  • the dry film resist is in contact with the LED chips and template. As shown in FIG. 7, the dry resist film can "tent" over the gap between the LED chips and template.
  • FIG. 8 shows the exposure of the dry resist film.
  • the photo mask 152 with the artwork printed on a transparent film, is disposed over the polyester cover of the dry film resist 150 th at has been adhered to the LED chips/template.
  • the ink side of the photo mask is in contact with the polyester cover.
  • a UV transparent glass or acrylic plate (not shown) is placed over the top of the photo mark, so that the photo mask can have a smooth and intimate contact with the polyester cover.
  • the exposure can be carried out using a UV light source 190, for example, LED lamp LuxSpot Alta from LedEngin can provide 400 um UV fight.
  • the exposure can be carried out for, e.g., 20 minutes.
  • a post-exposure bake is performed to further assist cross links of the photoresist.
  • the unexposed area s of the photoresist film is removed using a conventional resist development process.
  • the top surface of the LED dies is exposed, except the bond pad areas.
  • the bond pad areas and the rest of the surface of the template are now protected by the developed photoresist, as shown in the top view of a die area 154.
  • a phosphor containing mixture 160 is deposited over the patterned stack.
  • the mixture can be prepared by mixing silicone (e.g., Ker25Q0), phosphors (e.g., yellow and red phosphors), and diluting solution (e.g., KF-994, cyclotetrasiioxane) to achieve proper viscosity and thixotropy.
  • the mixture can have a higher viscosity than the mixture used in conventional liquid dispensing methods. Therefore, changes in the phosphor mixture caused by settling can be reduced.
  • a degas procedure can be used to remove bubbles. The mixture is then rolled over photoresist pattern and print.
  • the printing can be carried out using, e.g., the printing machine from DEK. After printing, excess siiieone/phosphor/diiutent mixture is removed from the stencil. The thickness of the photoresist allows a controlled thickness of the phosphor mixture on the die top.
  • FIG. 1 1 shows the intermediate structure including a glass plate 120, a template 130 over the plate, LED chips 140 disposed in openings in the template, a photoresist 150 with a phosphor-containing mixture 160 filling the openings in the photoresist and over the exposed top surface of the LED chips.
  • This intermediate structure is placed over a hot plate 200 to cure the silicone at 120-150°C for 2. minutes. During curing, the photoresist is maintained at the printing position so silicone does not ilow and cover the wire bond pads, until the silicone/phosphor/dilutent mixture is dried.
  • the photoresist is removed.
  • a suitable photoresist stripping solution such as those from Dupont or MG Chemical, can be used.
  • FIG. 13 the template is removed, and each individual LED die is now covered with a layer of phosphor-containing mixture.
  • a stracture shown in FIG. 13 includes a plurality of separate LED dies 140 attached to an adhesive tape 1 10, each of the LED dies having a layer of phosphor-containing material 160 on the die top.
  • a standard assembly process e.g., using a pick-and-place tool, can be used to install the phosphor-coated LED dies in an emitter package.
  • FIG. 14 is a flowchart summarizing a method for depositing a layer of phosphor- containing material on a plurality of LED (light-emitting diode) dies according to an embodiment of the present invention. As shown in FIG. 14, the method includes the following processes: ⁇ disposing a template with a plurality of openings on an adhesive tape;
  • the dry film photoresist layer having a plurality of openings configured to expose a top surface of each of the LED dies;
  • the process of depositing a phosphor-containing material on the top surface of each the LED dies includes:
  • each die is tested for light color. Two or more dies of opposite colors (with respect to the average color of all dies) may be selected and attached in a multi-die package.
  • the methods described herein can be applied to a plurality of LEDs formed on a conducting carrier substrate, ⁇ some embodiments, the methods described herein can be applied to a plurality of LEDs formed on a semiconductor wafer.
  • GaN (gallium nitride) LEDs can be formed on a SiC (silicon carbide) substrate or a sapphire (AI 2 O 3 ) wafers.
  • the methods described herein can be applied to a plurality of LEDs grown on a silicon wafer.
  • using silicon wafers as a substrate for GaN epitaxy could reduce the cost, simplify LED structure, and enable the integration of an optical device with CMOS circuits.
  • forming a phosphor layer on LED wafers can be an expensive and non-repeatable process.
  • gold (Au) stud bumps are first formed on the LED dies.
  • a phosphor material is dispensed on each LED die, which is often carried out in a slow serial process.
  • the phosphor on the LED dies on the same wafer may undergo different amount of settling.
  • the wafer goes through a grinding process to remove excess phosphor and expose the gold stud bumps.
  • thickness control of phosphor thickness is difficult to achieve.
  • FIG. 15 is a flowchart summarizing a method for depositing a layer of phosphor- containing material on a plurality of LED (light-emitting diode) dies on a wafer according to an embodiment of the present invention.
  • the method includes the foil owing processes : * forming a dry film photoresist layer over the template and the plurality of LED dies, the dry film photoresist layer having a plurality of openings configured to expose a top surface of each of the LED dies;
  • FIGS. 16-21 are simplified cross-sectional views illustrating a method for forming a phosphor containing material on LED dies on a wafer. The processes described here are similar to those illustrated above in FIGS. 7-12, in which the LED dies are placed in the openings in a template. In contrast, in FIGS. 16-21, the LED dies are formed on a substrate, for example, a semiconductor wafer.
  • FIG. 16 shows a dry film resist 250 disposed over a wafer 220 that includes a plurality of LEDs 240.
  • wafer 220 can be a semiconductor wafer with LEDs built in it. Alternatively, the LEDs can be formed on a top surface of the wafer or formed partially in the wafer.
  • a dry film resist 150 is disposed over wafer 220 with the LEDs 240.
  • the dsy film resist is in contact with the LEDs and can be in contact with regions of the wafer between the LEDs.
  • the dry resist film can "tent" over the gaps between the LED chips on the wafer. Such gaps may be formed during LED wafer processing. For example, wire bond pads may be disposed below the top surface of the LEDs.
  • FIG. 17 shows the exposure of the dry resist film in the patterning process.
  • a photo mask 152 with the artwork printed on a transparent film, is disposed over the dr '- film resist 150 that has been adhered to the LED chips on the wafer.
  • the ink side of the photo mask is in contact with the polyester co ver of the dry film resist.
  • a LTV transparent glass or acrylic plate (not shown) is disposed over the top of the photo mark, so that the photo mask can have a smooth and intimate contact with the polyester cover.
  • the exposure can be carried out using a UV light source 190, for example, LED lamp Luxpot alia from LedEngin can provide 400 urn UV light.
  • the exposure can be carried out for, e.g., 20 minutes.
  • a post-exposure bake is performed to further assist cross-links of the photoresist.
  • the unexposed regions of the photoresist film are removed using a conventional resist development process.
  • the f op surfaces of the LED dies are exposed by the plurality of openings in the patterned resist, except the bond pad areas.
  • the bond pad areas and the rest of the surface of the wafer are now protected by the developed photoresist, as shown in the top view of a die area 154.
  • a phosphor containing mixture 160 is deposited over the patterned photoresist.
  • the mixture can be prepared by mixing silicone (e.g., Ker2500), phosphors (e.g., yellow and red phosphors), and diluting solution (e.g., KF-994,
  • the mixture can have a higher viscosity that the mixture used in conventional liquid dispensing methods. Therefore, changes in the phosphor mixture caused by settling can be reduced.
  • a degas procedure can be used to remove bubbles.
  • the mixture is then deposited over the photoresist pattern using a screen printing process. The printing can be carried out using, e.g., the printing machine from DEK. After printing, excess
  • silicone/phosphor/dilutent mixture is removed from the wafer.
  • the thickness of the photoresist allows a controlled thickness of the phosphor mixture on the die top.
  • depositing the phosphor-containing material in each of the openings in the patterned dry resist film includes depositing the phosphor-containing material on the patterned photoresist layer and the LED dies, and removing the phosphor-containing material from the top surface of the photoresist layer and on the top surface of the LED dies that protrudes above the top surface of the patterned resist.
  • depositing the phosphor-containing material in each of the openings in the photoresist layer comprises using a screen printing method.
  • FIG. 20 shows an intermediate structure including LED dies 240 in wafer 220, patterned photoresist 150 with a phosphor-containing mixture 160 filling the openings in the photoresist and over the exposed top surface of the LED chips.
  • This intermediate structure is placed over a hoi piaie 200 to cure the silicone, for example, at 120-150°C for 2 minutes. During curing, the photoresist is maintained at the printing position so silicone does not flow and cover the wire bond pads, until the silicone/phosphor/dilutent mixture is dried.
  • the photoresist is removed.
  • a suitable photoresist stripping solution such as those from Duporit or MG Chemical, can be used.
  • a structure shown in FIG. 2.1 includes a plurality of separate LED dies 240 on a wafer 220, each of the LED dies having a layer of phosphor-containing material 160 on the die top.
  • a standard manufacturing process can proceed.
  • the manufacturing process can include wafer probe to determine the electrical and optical properties of the LED dies, backside wafer polish to reduce thickness, metallization of the backside of the wafer, and wafer dicing to form individual LED chips, etc.
  • the process of depositing a phosphor- containing material on the top surface of each the LED dies on a wafer includes using a screen printing process, in embodiments of this invention, the screen printing process provides uniform phosphor thickness and is fast and cost-effective.
  • the process of depositing a phosphor-containing material on the top surface of each the LED dies includes:
  • the openings in the patterned photoresist are used to deposit the phosphor-containing material onto the top surface of LED dies on a wafer.
  • the patterned photoresist film can be replaced by a pre-defined template having a plurality of openings patterned to expose the top surfaces of the LED dies.
  • a template can be made from a suitable material, such as metal or plastic.
  • a method for depositing a layer of phosphor-containing material on a plurality of LED (light- emitting diode) dies on a substrate includes forming a template over a plurality of LED dies on the substrate, the templ te having a plurality of openings configured to expose a top surface of each of the LED dies.
  • the method also includes depositing a phosphor- containing material on the exposed top surface of each the LED dies and removing the template.
  • the template is made of a material that can be selectively etched from the phosphor-containing material.
  • the template is a patterned dry photoresist film, which can be etched selectively with respect to the phosphor-containing material.
  • the template has a non-sticky surface such that the template can be removed from the deposited phosphor- containing material.
  • the template can be made of a metal material coated with Teflon.
  • the plurality of LEDs is formed on a semiconductor substrate for example, a silicon wafer.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé permettant de déposer une couche de matériau contenant une substance fluorescente sur une pluralité de puces de DEL (diodes électroluminescentes) sur une plaquette qui consiste à disposer une couche de pellicule photorésistante sèche sur une pluralité de puces de DEL sur une plaquette, à disposer un masque au-dessus de la pellicule photorésistante sèche, et à tracer un motif sur la pellicule photorésistante sèche pour former une pluralité d'ouvertures dans la pellicule photorésistante sèche pour découvrir une surface supérieure de chacune des puces de DEL. Le procédé consiste aussi à déposer un matériau contenant une substance fluorescente sur la surface supérieure découverte de chacune des puces de DEL au moyen d'un processus de sérigraphie, et à retirer la pellicule photorésistante sèche à motif.
PCT/US2014/022745 2013-03-15 2014-03-10 Impression d'une substance fluorescente sur une plaquette de del par lithographie sur pellicule sèche WO2014150263A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/842,127 2013-03-15
US13/842,127 US8900892B2 (en) 2011-12-28 2013-03-15 Printing phosphor on LED wafer using dry film lithography

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WO2014150263A1 true WO2014150263A1 (fr) 2014-09-25

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US10269781B1 (en) 2017-10-20 2019-04-23 Facebook Technologies, Llc Elastomeric layer fabrication for light emitting diodes
US11777059B2 (en) 2019-11-20 2023-10-03 Lumileds Llc Pixelated light-emitting diode for self-aligned photoresist patterning
US11949053B2 (en) 2020-12-14 2024-04-02 Lumileds Llc Stencil printing flux for attaching light emitting diodes

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US20090176324A1 (en) * 2008-01-03 2009-07-09 E.I. Du Pont De Nemours And Company Method for encapsulating a substrate and method for fabricating a light emitting diode device
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US4514489A (en) * 1983-09-01 1985-04-30 Motorola, Inc. Photolithography process
US20020053515A1 (en) * 1998-02-26 2002-05-09 Micron Technology, Inc. Methods using electrophoretically deposited patternable material
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US10685946B2 (en) 2017-10-20 2020-06-16 Facebook Technologies, Llc Elastomeric layer fabrication for light emitting diodes
US11777059B2 (en) 2019-11-20 2023-10-03 Lumileds Llc Pixelated light-emitting diode for self-aligned photoresist patterning
US11949053B2 (en) 2020-12-14 2024-04-02 Lumileds Llc Stencil printing flux for attaching light emitting diodes

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