WO2014142781A1

WO2014142781A1 - A high electrical field driver

Info

Publication number: WO2014142781A1
Application number: PCT/US2013/030095
Authority: WO
Inventors: Whei-Chyou Wu; Yen-Wei Hsu
Original assignee: Whei-Chyou Wu; Yen-Wei Hsu
Priority date: 2013-03-11
Filing date: 2013-03-11
Publication date: 2014-09-18

Abstract

An inventive high electrical field driver is stabilized to produce at least one high electrical field with each high electrical field having single polarity. The inventive high electrical field driver is stabilized to produce at least one high electrical field with each high electrical field having single polarity. The inventive high electrical field driver can produce two high electrical fields having opposite polarities. The inventive high electrical field driver can be stabilized so that the driver can be dynamically operated at wide bandwidth. The inventive high electrical driver has advantaged having no expensive high voltage rectifier or diode, which are needed in producing single polarity in prior-art applications.

Description

TITLE OF INVENTION

A high electrical field driver FIELD OF INVENTION

This invention relates to a driver, more particularly, to a high electrical field driver for producing at least one high electrical field.

BACKGROUND INFORMATION

There number of prior-art voltage regulating circuits, for example, a boost circuit for boosting voltage level and a buck circuit for reducing voltage level. FIG. la has shown a prior-art boost circuit.

The boost circuit of FIG. la has shown an electrical power source 109, an inductor 101, a switch such as a transistor 103, a PWM controller 104 for controlling the on/off switching of the power transistor 103 and a loading 108. The electrical power source 109, the inductor 101 and the power transistor 103 are electrically connected in series with each other and the loading 108 is electrically connected to a low side of the inductor 101.

FIG. li has shown a prior-art blocking oscillator which can be divided into a first circuit 128 surrounded by a dotted block and a second circuit not in the dotted block electrically coupling with the first circuit 128. The second circuit formed by an electrical power source 120, a second inductor 124, a second resistor 122 which is the resistance of the second inductor 124, a switch such as a transistor 125 and a driven loading 127 electrically con- nected to a low side of the second inductor 124. The electrical power source 120, the second inductor 124, the transistor 125 are electrically connected in series with each other.

The first circuit 128 and the second circuit are powered by the electrical power source 120. The first circuit 128 is formed by a first resistor 121, a first inductor 123 forming a transformer with the second inductor 124 as a disturbance to the blocking oscillator, and a capacitor 126 oscillates the power transistor 125 of the second circuit so that the transistor 125 oscillated by the first circuit 128 can be viewed as a self-excitation switch and the blocking oscillator of FIG. li can be viewed as a self- excitation oscillator. Obviously, the first circuit 128 and the second circuit use the same electrical power source 120 and the first circuit 128 is a RLC circuit good for oscillation and the charge and the discharge of the capacitor 126 of the first circuit 128 switch the transistor 125.

The boost circuit of FIG. la and the blocking oscillator of FIG. li have a "switching circuit" in common. The switching circuit comprises an electrical power source for providing an electrical energy, an inductor for temporarily storing magnetic energy converted from the electrical energy of the electrical power source, and a frequency modulator or a switch such as a transistor for providing frequency-modulation to the switching circuit elec- trically connected in series with each other. The on/off switchings of the transistor can be controlled by a "given signal" provided by a PWM controller as the transistor 103 and the PWM controller 104 shown in FIG. la or the transistor is a self-excitation switch 125 of the second circuit shown in FIG. li.

The switching circuit describes converting an electrical energy of the electrical power source into a magnetic energy temporarily stored in the inductor and releasing the magnetic energy temporarily stored in the inductor into current controlled by the oscillation of the frequency modulator. By using the boost circuit of FIG. la as an example, when the power transistor 103 is in close state (or the power transistor 103 is on), a current from the electrical power source 109 flowing through the switching circuit magnetizes the inductor 102 converting an electrical energy from the electrical power source 109 into a magnetic energy temporarily stored in the inductor 101; and when the power transistor 103 is in open state (or the power transistor 103 is off), current from the electrical power source 109 stops and the magnetic energy temporarily stored in the inductor 101 will be immediately released in the form of a current for driving the loading 108. Obviously, converting the electrical energy from the electrical power source 109 into the magnetic energy stored in the inductor 101 and releasing the magnetic energy temporalily stored in the inductor 101 into current for driving the loading 108 is realized by the switchings of the power transistor 103.

The sequence of the electrical power source, the inductor and the frequency modulator of the switching circuit is not limited in the switching circuit, for example, the frequency modulator can be disposed at the high side or the low side of the inductor as respectively shown in FIG. lc and FIG. lb. The switching circuit of FIG. lb and lc respectively comprises an electrical power source 159, an inductor 151, and a frequency modulator 153 electrically connected in series with each other. The frequency modulator 153 is not limited, for example, it can be a self-excitation switch 125 of the second circuit shown in FIG. li or a switch such as a transistor 103 controlled by the PWM controller 104 as shown in FIG. la. The switch as the frequency modulator can be in a general form as shown in FIG. Id comprising a first terminal marked by 1, a second terminal marked by 2, and a third terminal marked by 3 and the electrical connection or disconnection of the first terminal 1 and the second terminal 2 is controlled by the third terminal 3. The inductor is not limited, for example, it can be the inductor revealed in our previous invention no. 13/193,620 of USA. The electrical power source 159 is not limited, for example, it can be a dc power source such as a battery, a capacitor, a photo-electricity conversion device such as a solarcell.

Using the switching circuit of FIG. lb and assuming the frequency modulator 153 of the switching circuit of FIG. lb to be a transistor, current from the electrical power source 159 will flow through the inductor 151, the transistor 153 in close state and to the ground. When the transistor 153 is turned open the current is cut off at the opened point and a high Lenz voltage is produced by the current- cut- off. The produced high frequency ac Lenz current is opposite to the current from the electrical power source 159 and hard to go through the inductor 151 back to the electrical power source 159 because the impedance of the inductor 151 becomes very big due to the high frequency excitation of the Lenz current so that a circuit, which is called "reaction circuit" , in parallel with the inductor 151 is for the opposite Lenz current to go through.

For a switching circuit, a power source applies power to a loading is an "action" and when the action stops "a reaction to the action" occurs. For example, by employing the switching circuit of FIG. lb, when the power transistor 153 is in close state a current from the electrical power source 159 flowing through loadings, which include the inductor 151 and the transistor 153, is an "action" and when the transistor 153 is switched in open state the current from the electrical power source 159 is cut off at the transistor 153, the "action" stops, and an ac Lenz current, which is a reaction to the action, is expected to flow through the "reaction circuit" . It's im- portant that the "action" will not flow through the "reaction circuit" , which can be done by an action/reaction isolation device.

An action/reaction isolation device is disposed in the "reaction circuit" and is used to prohibit an action, which is the current from the electrical power source 159, to flow through the reaction circuit and allow a reaction to the action, which is the Lenz current opposite to the current from the electrical power source 159 to flow through the reaction circuit. The high frequency ac Lenz current flowing through the reaction circuit should be stablized or dissipated in the reaction circuit, which can be performed by a damper.

Shown in FIG. lb, the reaction circuit in parallel to the inductor 151 comprises a damper 1512 and an action/reaction isolation device 1511 electrically connected in series with each other. The action/reaction isolation device 1511 is used to prohibit an action, which is the current from the electrical power source 159, to flow through the reaction circuit in parallel to the inductor 151 and allow a reaction to the action, which is the Lenz current opposite to the current from the electrical power source 159 to flow through the reaction circuit. The damper 1512 is used to dissipate the Lenz current flowing through the reaction circuit.

The action/reaction isolation device 1511 is not limited to any particular action/ reaction isolation device, for example, an embodiment by using FIG. lb, if the electrical power source 159 in FIG. lb is a dc power source, the action/reaction isolation device can be an ac/dc isolation device such as a capacitor which can block the dc current from the dc power source from flowing through the reaction circuit but allow the opposite ac Lenz current to go through the reaction circuit. Another embodiment, the action/reaction isolation device can be an unidirectional device such as a diode for only allowing current to flow in one way. The unidirectional diode such as a diode prohibits current from the electrical power source flowing through the reaction circuit but allows the opposite Lenz current to flow through the reaction circuit.

The damper 1512 is for dissipating or stablizing the Lenz power flowing through the reaction circuit. The damper 1512 is not limited to any particular damper, for example, an embodiment, the damper can be realized by a positive differential resistance device (or PDR device in short) and a negative differential resistance device (or NDR device in short) electrically connected in series. The following has a brief discussion about this.

For any RLC circuit can be expressed by two first- order differential equations as followed:

of which x and y are state variables of which one is current and the other one is voltage and F (X) is the impedance function. The two first-order differential equations (1) can be expressed by a second-order differential equation as shown by: dF (x) dx

dt² dx dt

or

where

dx

It's note that the ¾^ in - ^d term is the damping term. According to the Lienard stabilized system theory, for any stabilized periodical system, ¾^ > o and < o hold simultaneously and the two must pass ¾^ = o , where ¾^ > o is defined as positive differential resistance or PDR in short, ¾^ < o is defined as negative differential resistance or NDR in short, and = o is a constant resistance or defined as pure resistance. Any device having PDR is a PDR device, any device having NDR is a NDR device, and any device having constant resistance is defined as pure resistor. It's obvious that a PDR device and a NDR device electrically connected in series can satify ¾^ > o and ¾^ < o simultaneously so that a PDR device and a NDR device electrically connected in series is a damper.

The PDR device and the NDR device are not limited to any particular PDR device and NDR device, for example, an embodiment, a PDR device and a NDR device can respectively be a positive temperature coefficient (or PTC in short) and negative temperature coefficient (or NTC in short) . According to the chain-rule, dF (x) _ dF dT

dx dT dx where τ is temperature and assuming the state x is current for the purpose of convience, can be interpreted as a change in current leads to a change in temperature, and the change in temperature leads to a change in resistance as described by . This explains why a PTC and a NTC can respectively be a PDR device and a NDR device.

More detailed about the damper formed by a PDR device and a NDR device electrically connected in series and an energy discharge capacitor formed with a PDR device and a NDR device can be referred to our previous invention "a capacitor" USA earily publication no. US2010-0277392A1 for reference. The energy discharge capacitor is a capacitor also is a damper. The "energy discharge capacitor" in the present invention is the capacitor of our previous invention "a capacitor" USA earily publication no. US2010-0277392A1.

The damper 1512 of the switching circuit of FIG. lb can be realized by a PDR device and a NDR device electrically connected in series such as a PTC and a NTC electrically connected in series or by an energy discharge capacitor formed with a PDR device and a NDR device. The action/reaction isolation device of FIG. lb can be realized by an ac/dc isolation device such as a capacitor that includes an energy discharge capacitor formed with a PDR device and a NDR device or an unidirectional device such as diode. FIG. le has shown the action/reaction isolation device is realized by a capacitor 15117 and the damper is realized by a PDR device 15126 and a NDR device 15127 electrically connected in series. FIG. If has shown the action/reaction isolation device is realized by a diode 15118 and the damper is realized by a PDR device 15126 and a NDR device 15127 electrically connected in series. FIG. lg has shown the action/reaction isolation device is realized by a capacitor 15117 and the damper is realized by a PTC device 15128 and a NTC device 15129 electrically connected in series. FIG. lh has shown the action/reaction isolation device is realized by an energy discharge capacitor 15118 formed with a PDR device and a NDR device and the damper is realized by a PTC device 15128 and a NTC device 15129 electrically connected in series. FIG. lj has shown the action/reaction isolation device and the damper are realized by an energy discharge capacitor 15118 formed with a PDR device and a NDR device.

The switching circuit can be stabilized by dampers so that the switching circuit can be dynamically operated at wide bandwidth.

SUMMARY OF THE INVENTION

A stabilized high electrical field driver is invented for producing at least one high electrical field based on the switching circuit. The inventive high electrical field driver is stabilized to produce at least one high electrical field with each high electrical field having single polarity. The inventive high electrical field driver can produce two high electrical fields having opposite polarities. The inventive high electrical field driver can be stabilized so that the driver can be dynamically operated at wide bandwidth. The inventive high electrical driver has advantaged having no expensive high voltage rectifier or diode, which are needed in producing single polarity in prior-art applications.

BRIEF DESCRIPTION OF THE DRAWINS

FIG. la has shown a prior-art boost circuit;

FIG. lb has shown a switching circuit in a general form;

FIG. lc has shown a switching circuit in a general form;

FIG. Id has shown the switching circuit of FIG. lb of which the frequency modulator is realized by a switch in a general form;

FIG. le has shown the switching circuit of FIG. lb of which the action/reaction isolation device is realized by a capacitor and the damper is realized by a PDR device and a NDR device electrically connected in series;

FIG. If has shown the switching circuit of FIG. lb of which the action/reaction isolation device is realized by a diode and the damper is realized by a PDR device and a NDR device electrically connected in series;

FIG. lg has shown the switching circuit of FIG. le of which the PDR device and the NDR device are respectively realized by a PTC and a NTC;

FIG. lh has shown the switching circuit of FIG. lg of which the capacitor is an energy discharge capacitor of our previous invention;

FIG. li has shown a prior-art blocking oscillator;

FIG. lj has shown the switching circuit of FIG. lb of which the action/reaction isolation device and the damper are realized by an energy discharge capacitor of our previous invention;

FIG. 2a has shown a first high electrical field driver;

FIG. 2b has shown a second high electrical field driver;

FIG. 2c has shown the first high electrical field driver of FIG. 2a with a npn type transistor;

FIG. 2d has shown the second high electrical field driver of FIG. 2b with a npn type transistor;

FIG. 2e has shown the combination of the first high electrical field driver of FIG. 2a and the second high electrical field driver of FIG. 2b;

FIG. 3a has shown an embodiment of an open circuit device; FIG. 3b has shown an embodiment of an open circuit device; and

FIG. 3c has shown an embodiment of an open circuit device.

DETAILED DESCRIPTION OF THE INVENTION

The switching circuit of FIG. lb or FIG. lc can be used to construct an inventive high electrical field driver. The concept is easy. The switching circuit of FIG. lb or FIG. lc can further comprise a coil, which has a first terminal and a second terminal, forming a transformer with the inductor of the switching circuit of FIG. lb or FIG. lc for voltage boosting on the coil and the first terminal of the coil is electrically connected to the low side terminal or the high side terminal of the inductor of the switching circuit of FIG. lb or FIG. lc and an expective high voltage output with single polarity can be obtained at the second terminal of the coil. Assuming a first polarity is presented at the second terminal of the coil with the first terminal of the coil electrically connected to the low side of the inductor of the switching circuit of FIG. lb or FIG. lc and assuming a second polarity is presented at the second terminal of the coil with the first terminal of the coil electrically connected to the high side of the inductor of the switching circuit of FIG. lb or FIG. lc. The first polarity is opposite to the second polarity.

Some embodiments are as followed. The switching circuit of FIG. lb is used to construct an embodiment of a first high electrical field driver shown in FIG. 2a and assuming the frequency modulator 153 of FIG. lb to be a transistor 1530 of the first high electrical field driver shown in FIG. 2a, the inductor 151 of FIG. lb is a first inductor of the first high electrical field driver shown in FIG. 2a, the damper 1512 of FIG. lb is a first damper of the first high electrical field driver shown in FIG. 2a, and the action/reaction isolation device 1511 of FIG. lb is a first action/reaction isolation device of the first high electrical field driver shown in FIG. 2a.

The switching circuit of FIG. lb further comprises a first coil 1513, which has a first terminal and a second terminal, forming a transformer with the first inductor 151 for voltage boosting on the first coil 1513, and the first terminal of the first coil 1513 electrically connects to a low side terminal of the first inductor 151 and a first high voltage output with a single polarity or a first polarity can be obtained at the second terminal of the first coil 1513 as shown in FIG. 2a.

Also shown in FIG. 2a, a second coil 1514, which has a first terminal and a second terminal, forms a transformer with the first inductor 151 for voltage boosting on the second coil 1514 and the first terminal of the second coil 1514 electrically connects to a high side terminal of the first inductor 151 and a second high voltage output with a single polarity or a second polarity opposite to the first polarity can be obtained at the second terminal of the second coil 1514. The first high electrical field driver shown in FIG. 2a has featured to produce two high voltage outputs with opposite polarities.

The switching circuit of FIG. lc can be used to construct an embodiment of a second high electrical field driver shown in FIG. 2b and assuming the frequency modulator 151 of FIG. lc to be a transistor 1530 of the second high electrical field driver shown in FIG. 2b, the inductor 151 of FIG. lc to be a second inductor 152 of the second high electrical field driver shown in FIG. 2b, the damper 1512 of FIG. lc to be a second damper 1522 of the second high electrical field driver shown in FIG. 2b, and the action/reaction isolation device 1511 of FIG. lc to be a second action/reaction isolation device 1521 of the second high electrical field driver shown in FIG. 2b.

Based on the switching circuit of FIG. lc, the second high electrical field driver shown in FIG. 2b has shown a third coil 1523, which has a first terminal and a second terminal, forming a transformer with the second inductor 152 for voltage boosting on the third coil 1523 and the first terminal of the third coil 1523 electrically connects to a low side terminal of the second inductor 152 and a third high voltage output with a single polarity or a third polarity can be obtained at the second terminal of the third coil 1523. The second high electrical field driver shown in FIG. 2b has also shown a fourth coil 1524, which has a first terminal and a second terminal, forming a transformer with the second inductor 152 for voltage boosting on the fourth coil 1524 and the first terminal of the fourth coil 1524 electrically connects to a high side terminal of the second inductor 152 and a fourth high voltage output with a single polarity or a fourth polarity opposite to the third polarity can be obtained at the second terminal of the fourth coil 1524. The second high electrical field driver has featured two high electrical fields with opposite polarities.

The way to switch the transistor 1530 of the first high electrical field driver and the second high electrical field driver is not limited to any particular way, for example, the transistor 1530 can be a self-excitation switch as discussed in the background information above or the switchings of the transistor 1530 can be controlled by a PWM controller. The PWM controller sends a waveform to turn the transistor 1530 on or off. The waveform is not limited to any particular waveform, for example, an embodiment, it can be a positive on-duty waveform 1535 or a negative on-duty waveform 1536 as shown in FIG. 2d.

The type of the transistor 1530 of the first high electrical field driver and the second high electrical field driver as pnp or npn type transistor and a waveform as a positive on-duty waveform or a negative on-duty wave- form switching the transistor 1530 can also decide the first, second, third and fourth polarities.

FIG. 2c has shown the embodiment of the first high electrical field driver of FIG. 2a by assigning the transistor 1530 as a npn transistor 1531 switched by a positive on-duty waveform 1535 or a negative on-duty waveform 1536 and FIG. 2d has shown the embodiment of the second high electrical field driver of FIG. 2b by assigning the transistor 1530 as a npn transistor 1531 switched by a positive on-duty waveform 1535 or a negative on-duty waveform 1536.

Shown in FIG. 2c, the first polarity of the first high electrical field obtained at the second terminal of the first coil 1513 depends on the positive on-duty waveform 1535 or the negative on-duty waveform 1536 switching the transistor 1531, and the second polarity of the second high electrical field obtained at the second terminal of the second coil 1514 depends on the positive on-duty waveform 1535 or the negative on-duty waveform 1536 switching the transistor 1531. Shown in FIG. 2c, the first polarity of the first high electrical field obtained at the second terminal of the first coil 1513 appears in a first small square 15141 with the transistor 1531 switched by the positive on-duty waveform 1535, the first polarity of the first high electrical field obtained at the second terminal of the third inductor 1513 appears in a second small square 15142 with the transistor 1531 switched by the negative on-duty waveform 1536, the second polarity of the second high electrical field obtained at the second terminal of the second coil 1514 appears in a third small square 15143 with the transistor 1531 switched by the positive on-duty waveform 1535 and the second polarity of the second high electrical field obtained at the second terminal of the second coil 1514 appears in a fourth small square 15144 with the transistor 1531 switched by the negative on-duty waveform 1536. A positive sign or a negative sign in the first, second, third and fourth squares respectively stands for a positive polarity or negative polarity. For example, as shown in FIG. 2c, a positive sign appears in the third square 15143 and a negative sign appears in the first square 15141.

A high electrical field driver can be constructed by a switching circuit having two inductors respectively disposed at two sides of a transistor. For convenience, using the embodiments of FIG. 2a and FIG. 2b, FIG. 2e has shown the combination of the first high electrical field driver of FIG. 2a and the second high electrical field driver of FIG. 2b revealed above. FIG. 2e has shown the first inductor 151, the second inductor 152, the transistor 1530 disposed between the first inductor 151 and the second inductor 152, the first coil 1513, the second coil 1514, the third coil 1523, the fourth coil 1524, a first reaction circuit in parallel to the first inductor 151 having the first damper 1512 and the first action/reaction isola- tion device 1511, a second reaction circuit in parallel to the second inductor 152 having the second damper 1522, and the second action/reaction isolation device 1521.

The inventive high electrical field driver can be stabilized by the damper so that the driver advantages to be dynamically operated at wide bandwidth. The inventive high electrical driver has advantaged having no expensive high voltage rectifier or diode, which are needed in producing single polarity in prior-art applications.

As shown in FIG. 3a, an open circuit device comprises a first terminal 301 and a second terminal 302 separating the first terminal 301 by an open gap having an open gap width d and an electrical discharge between the first terminal 301 and the second terminal 302 can take place if a voltage is applied between the first terminal 301 and the second terminal 302 and at least one of the first terminal 301 and the second terminal 302 is a discharge electrode of the electrical discharge. For the purpose of convenience, a voltage applied between a first terminal 301 and a second terminal 302 of an open circuit device for an occurence of an electrical discharge between the first terminal 301 and the second terminal 302 of the open circuit device is called "electrical discharge voltage" or "threshold voltage" in the present invention. In other words, an open circuit device has a threshold voltage for an occurence of an electrical discharge. A "threshold voltage" of an open circuit device can be obtained by a suitable design, for example, an embodiment, by adjusting the open gap width d of the open circuit device. The electrical discharge of the open circuit device is not limited, for example, it can be an electrical corona discharge or electrical glowing discharge.

An occurence of an electrical discharge between the first terminal 301 and the second terminal 302 of the open circuit device 30 can be decided by a voltage across the first terminal 301 and the second terminal 302, the frequency of the voltage applied between the first terminal 301 and the second terminal 302, the open gap width d of the open gap 303 between the first terminal 301 and the second terminal 302, a medium disposed between the first terminal 301 and the second terminal 302, an ionization condition between the first terminal 301 and the second terminal 302, an electrical field between the first terminal 301 and the second terminal 302, a temperature variation between the first terminal 301 and the second terminal 302, the shapes of the first terminal 301 and the second terminal 302, and/or the materials made of the first terminal 301 and the second terminal 302, etc. For example, an embodiment, a medium disposed in the open gap 303 can be in a form of a gas such as air or inert gas for isolating the first terminal 301 and the second terminal 302 from outside environment against oxidizing. A medium disposed in the open gap 303 can luminate when electrical discharge occurs as an indication of the occurence of electrical discharge.

The shapes of the first terminal 301 and the second terminal 302 are not limited, for example, the first terminal 301 and the second terminal 302 can be respectively shaped as needle point as shown in FIG. 3a advantaging for more precise control of an occurence of an electrical discharge and easier occurence of the an electrical discharge or shaped having shown in FIG. 3b which can be viewed to have a plurality of needle points featuring multiple electrical discharges between the first terminal 301 and the second terminal 302. Multiple electrical discharges between the first terminal 301 and the second terminal 302 of the open circuit device 30 features bigger current capability flowing through the first terminal 301 and the second terminal 302 of the open circuit device 30 at an electrical discharges. For the purpose of convenience, an open circuit device with its first terminal and second terminal respectively having

shown in FIG. 3b is called a first type open circuit device in the present invention.

Needle points can be in micro or nano scale if the first terminal 301 and the second terminal 302 of an open circuit device 30 of FIG. 3a or FIG. 3b are made of nanoscaled materials. Smaller scaled needle points feature more precise control of an occurence of an electrical discharge, higher density of needle points, more numbers of electrical discharges taking place between the first terminal 301 and the second terminal 302, bigger current capability flowing between the first terminal 301 and the second terminal 302 of the open circuit device 30, and more complicated and more randomly electrical discharge routes.

Nanoscaled material can be viewed to be formed or treated by nanoscaled particles which can be reasonably viewed as "micro needle array" . A conductive nanoscaled material is not limited to a particular one, for example, it can be a CNT, a graphene, a carbon-like diamond, or C₆₀ family. "A conductive nanoscaled material" includes a CNT, a graphene, a carbon-like diamond, or C₆₀ family in the present invention.

An embodiment, the first terminal 301 and the second terminal 302 of the first type open circuit device of FIG. 3b respectively can be made of a conductive nanoscaled material having micro needle array. For the purpose of convenience, the open circuit device of the embodiment is called a second type open circuit device in the present invention.

An embodiment, an open circuit device is shown in FIG. 3c, FIG. 3c has shown a first terminal of an open circuit device 30 is formed by a first conductive nanoscaled material 3811 and a first conductive material 3812 electrically connecting to the first conductive nanoscaled material 3811, a second terminal of the open circuit device 30 is formed by a second conductive nanoscaled material 3821 and a second conductive material 3822 electrically connecting to the second conductive nanoscaled material 3821, and an open gap 303 is formed between the first conductive nanoscaled material 3811 and the second conductive nanoscaled material 3821. Electrical discharges take place between the first conductive nanoscaled material 3811 and the second conductive nanoscaled material 3821. For the purpose of convenience, the open circuit device of the embodiment is called a third type open circuit device in the present invention.

Any one of the first conductive material 3812 and the second conductive material 3822 of the third type open circuit device can be a conductive PDR device and the other one of the first conductive material 3812 and the second conductive material 3822 not the conductive PDR device of the third type open circuit device can be a conductive NDR device. For the purpose of convenience, the open circuit device is called a fourth type open circuit device in the present invention.

The behavior of the electrical discharge of an open circuit device is very complicated, which can be seen in its I-V curve. Explaining the complicated behavior in a simple way, the complicated behavior of the electrical discharge of an open circuit device can be categoried into a PDR (Positively Differential Resistance) , a NDR (Negatively Differential Resistance) and a constant resistance. By using FIG. 3a as an example, when a voltage built between the first terminal 301 and the second terminal 302 of the open circuit device 30 reaches its "threshold voltage" , an electrical discharge takes place causing current to flow through the first terminal 301 and the second terminal 302 to present a NDR, then the voltage across the first terminal 301 and the second terminal 302 will drop to a level by the NDR unable to keep the electrical discharge, then current stops flowing between the first terminal 301 and the second terminal 302 and a voltage across the first terminal 301 and the second terminal 302 will be built again to present a PDR until reaching to a next discharge voltage for a next electrical discharge. The PDR and the NDR will alternatively proceed with its current between zero and a non-zero value and its impedance chaotically randomly varying between zero and infinity.

The PDR device and the NDR device are not limited. The PDR device can be easily found anywhere, for example, an embodiment, the PDR device can be a Positive Temperature Coefficient (or PTC in short) as revealed in the background information above. The NDR device can be a metal oxided material such as ZnO or a Naga- tive Temperature Coefficient (or NTC in short) as also revealed in the background information above.

The term "Open circuit device" used in the present invention can be the first type open circuit device, the second type open circuit device, the third type open cir- cuit device, or the fourth type open circuit device.

The first terminal and the second terminal of the first type open circuit device, the second type open circuit device, the third type open circuit device, or the fourth type open circuit device are not limited to be made of a particular material, for example, they can be made of a conductive material such as a conductor or semiconductors.

The inventive high electrical field driver can produce high electrical field to drive an open circuit device, which can be the first type open circuit device, the second type open circuit device, the third type open circuit device, or the fourth type open circuit device revealed above.

Claims

1. A high electrical field driver, comprising:

an electrical power source;

an inductor having a low side terminal and a high side terminal;

a reaction circuit in parallel to the inductor comprising an action/reaction isolation device and a damper electrically connected in series;

a frequency modulator; and

a first coil having a first terminal and a second terminal;

wherein the electrical power source, the inductor and the frequency modulator are electrically connected in series with each other, the first coil forms a transformer with the inductor for voltage boosting on the first coil, the first terminal of the first coil electrically connects to the low side terminal or the high side terminal of the inductor, a first high voltage output having a first polarity presents at the second terminal of the first coil.

2. The high electrical field driver of claim 1, further comprising a second coil having a first terminal and a second terminal, wherein the second coil forms a transformer with the inductor for voltage boosting on the second coil, the first terminal of the second coil electrically connects to the low side terminal or the high side terminal of the inductor not electrically connecting to the first terminal of the first coil, a second high voltage output having a second polarity opposite to the first polarity presents at the second terminal of the second coil.

3. The high electrical field driver of claim 1, further comprising a PWM controller, wherein the frequency modulator is a transistor switched by the PWM controller, the damper is formed by a PDR device and a NDR device electrically connected in series, the action/reaction isolation device is an unidirectional device.

4. The high electrical field driver of claim 2, further comprising a PWM controller, wherein the frequency modulator is a transistor switched by the PWM controller, the damper is formed by a PDR device and a NDR device electrically connected in series, the action/reaction isolation device is an unidirectional device.

5. The high electrical field driver of claim 1, further comprising a PWM controller, wherein the frequency modulator is a transistor switched by the PWM controller, the damper is formed by a PDR device and a NDR device electrically connected in series, the action/reaction isolation device is an ac/dc isolation device.

6. The high electrical field driver of claim 2, further comprising a PWM controller, wherein the frequency modulator is a transistor switched by the PWM controller, the damper is formed by a PDR device and a NDR device electrically connected in series, the action/reaction isolation device is an ac/dc isolation device.

7. The high electrical field driver of claim 3, wherein the unidirectional device is a diode.

8. The high electrical field driver of claim 4, wherein the unidirectional device is a diode.

9. The high electrical field driver of claim 5, wherein the ac/dc isolation device is a capacitor.

10. The high electrical field driver of claim 6, wherein the ac/dc isolation device is a capacitor.

11. The high electrical field driver of claim 7, wherein the PDR device is a positive temperature coefficient (PTC) and the NDR device is a negative temperature coefficient (NTC).

12. The high electrical field driver of claim 8, wherein the PDR device is a positive temperature coefficient (PTC) and the NDR device is a negative temperature coefficient (NTC).

13. The high electrical field driver of claim 9, wherein the PDR device is a positive temperature coefficient (PTC) and the NDR device is a negative temperature coefficient (NTC).

14. The high electrical field driver of claim 10, wherein the PDR device is a positive temperature coefficient (PTC) and the NDR device is a negative temperature coefficient (NTC).

15. The high electrical field driver of claim 1, wherein the action/reaction isolation device and the damper is an energy discharge capacitor formed with a PDR device and a NDR device.

16. The high electrical field driver of claim 2, wherein the action/reaction isolation device and the damper is an energy discharge capacitor formed with a PDR device and a NDR device.

17. The high electrical field driver of claim 9, wherein the capacitor is an energy discharge capacitor formed with a PDR device and a NDR device.

18. The high electrical field driver of claim 10, wherein the capacitor is an energy discharge capacitor formed with a PDR device and a NDR device.

19. The high electrical field driver of claim 13, wherein the capacitor is an energy discharge capacitor formed with a PDR device and a NDR device.

20. The high electrical field driver of claim 14, wherein the capacitor is an energy discharge capacitor formed with a PDR device and a NDR device.