WO2014142737A1 - Agencement et procédé pour pulvérisation magnétron pulsée à forte puissance - Google Patents

Agencement et procédé pour pulvérisation magnétron pulsée à forte puissance Download PDF

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Publication number
WO2014142737A1
WO2014142737A1 PCT/SE2014/050292 SE2014050292W WO2014142737A1 WO 2014142737 A1 WO2014142737 A1 WO 2014142737A1 SE 2014050292 W SE2014050292 W SE 2014050292W WO 2014142737 A1 WO2014142737 A1 WO 2014142737A1
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WIPO (PCT)
Prior art keywords
target
arrangement
substrate
plasma
negative ions
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Application number
PCT/SE2014/050292
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English (en)
Inventor
Ulf Helmersson
Original Assignee
Ulf Helmersson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Ulf Helmersson filed Critical Ulf Helmersson
Publication of WO2014142737A1 publication Critical patent/WO2014142737A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS

Definitions

  • the present disclosure relates to an arrangement for high power pulsed magnetron sputtering for deposition of a thin film onto a substrate surface and to a method of depositing a thin film onto a substrate surface through high power pulsed magnetron sputtering.
  • High power pulsed magnetron sputtering of which high power impulse magnetron sputtering (HiPIMS) is the most well-known, is a physical vapor deposition technology which has gained substantial interest in recent years for applying functional thin films to various substrates.
  • HiPIMS the power is applied to the target in pulses of low duty cycle ( ⁇ 10%) and frequency ( ⁇ 10 kHz) leading to pulse target power densities of several kW/cm 2 .
  • This mode of operation results in generation of ultra-dense plasmas with unique properties, such as a high degree of ionization of the sputtered atoms.
  • HPPMS just like conventional dc magnetron sputtering, may be used both with planar magnetrons and rotating cylindrical magnetrons.
  • Mahieu et al. (S. Mahieu, W.P. Leroy, K. van Aeken, D. Depla, J. Appl. Phys. 106 (2009) 093302) teaches that in dc magnetron reactive sputtering processes there is an unwanted high-energy negative ion bombardment of the growing film resulting in degradation of the film quality both for planar and cylindrical targets. Mahieu et al. shows that negative ions formed on the target surface from the reactive gases used in the process are accelerated away from the target surface impinging upon the growing film, resulting in a degradation of the film quality.
  • a specific object is to present such an arrangement wherein detrimental effects on the growing film from negative ions produced in the high power pulsed magnetron sputtering process are reduced.
  • Further objects are to present a method for depositing a thin film onto a substrate surface with high power pulsed magnetron sputtering such that detrimental effects on the growing film from negative ions produced in the method are reduced.
  • an arrangement for high power pulsed magnetron sputtering for deposition of a thin film onto a substrate surface comprising: a substrate onto which surface deposition is to be made, a target which constitutes a cathode or is electrically connected to a cathode and is formed at least in part from a material(s) to be included in the thin film, a pulsed power supply for applying voltage pulses between an anode and the cathode to make discharges between the anode and cathode, producing a plasma, and a first magnet assembly for providing a first magnetic field in a magnetron configuration at a surface of the target trapping electrons in a first magnetic field, resulting in a confinement of the plasma close to the target surface.
  • the arrangement is further provided with a guide provided between the target and the substrate, providing a second magnetic field which guides the plasma towards the substrate surface, wherein all surface normals of an active surface portion of the target are directed such that negative ions travelling along such surface normals are prevented from reaching the substrate surface.
  • An active surface portion is here defined as a portion of the target surface where the momentary target erosion takes place during the sputtering process, i.e. a target erosion area.
  • the target erosion area is the area from which 80 - 90%, 90 - 95% or 95 - 99% of the sputtered material is produced.
  • the impact energy of the negative ions is sufficiently great to displace atoms in the growing film, resulting in a degradation of the film quality.
  • the negative ions may be considered being a part of the plasma, but are due to their high energy not easily guided by the applied second magnetic field. Due both to the sign of their charge and their lower energy the positive ions of the plasma, including material sputtered from the target, are guidable due to interactions with the electrons of the plasma and, hence, travels with the plasma in a main direction of plasma propagation towards the substrate surface.
  • films deposited on the substrate surface with such an arrangement are superior in quality to films where negative ions have been allowed to reach the substrate surface.
  • the portion of negative ions prevented from reaching the substrate surface may in one embodiment be 10, 20, 30, 40, 50, 60, 70, 80, 90 or 100% of all negative ions present in the arrangement.
  • a degree of ionization of material sputtered from the target may be at least 20%, at least 40% or at least 60%.
  • the invention is applicable to HPPMS range and in particular to the HiPI S range.
  • a momentary peak power density, P peak , at the active surface portion of the target may be about 0.05-100 kW/cm 2 , or about 0.1 -50 kW/cm 2 , or about 0.5-20 kW/cm 2 , or about 1-20 kW/cm 2 , or about 2-20 kW/cm 2 , or about 5-20 kW/cm 2 , or about 5-10 kW/cm 2 .
  • the peak power density is here to be understood as the peak momentary electric power i - u divided by the area of the active surface portion of the target surface as defined above.
  • a duty cycle, F D _ g , c(e , of the pulsed power supply may be related to the peak power density at the target in such a way that the product, I - U - F D ⁇ , of them, provides a time averaged power in the active surface portion, which may be about 0.01-500 kW/cm 2 , or about 0.01-100 kW/cm 2 , or about 0.5-500 kW/cm 2 , or about 0.5-100 kW/cm 2 , or about 1-500 kW/cm 2 , or about 1-100 kW/cm 2 .
  • the arrangement and the method may be operated at a momentary peak power density as described above and/or at a time averaged power as described above.
  • the time averaged power in the active surface portion at which damage to the target is incurred normally provides an upper limit to the duty cycle at each given peak power density.
  • the duty cycle range is normally limited upwardly by the power limit (which provides an upper limit) and downwardly by a value which is about 1/10 - 1/20 of the power limit.
  • the arrangement may further comprise a shield for preventing negative ions from reaching the substrate surface.
  • the shield may comprise an apertured constriction.
  • An aperture area of the apertured constriction may be substantially circular, elliptical, or elongate.
  • An elongate aperture area may for example be a slit.
  • the aperture area of the constriction may be adjustable.
  • the shield may be formed by, or integrated with, the guide.
  • integrated is here meant that the guide and the shield may be made of the same part or as two parts permanently connected to each other.
  • At least one of the surface normals of an active surface portion may be directed towards the shield.
  • the guide may be arranged to guide the plasma, but not negative ions or uncharged atoms, past the shield
  • the guide may be arranged along a shortest distance between the substrate and the target.
  • the guide may be arranged offset a shortest distance between the substrate and the target.
  • the guide may comprise at least one solenoid.
  • a solenoid may be connected to a DC power supply to generate a controlled second magnetic field.
  • two or more solenoids may be connected in series.
  • the power to the solenoid may be connected to a pulsed power supply giving a magnetic field that is synchronized with the pulsed power on the cathode.
  • the cathode current can also drive the solenoid.
  • the guide may be arranged to alter the main direction of plasma propagation.
  • the target may be selected from a group comprising a substantially cylindrical target, a semicylindrical target, a partial cylindrical target, polygonal targets, arc-formed targets, rectangular or substantially flat targets.
  • the target surface to be sputtered may be the convex outside surface of the target.
  • the surface from which atoms are sputtered may be a continuous surface.
  • the surface from which atoms are sputtered may be a faceted surface.
  • the target may be a rotating substantially cylindrical target.
  • the target may be formed at least in part of a substance selected from a group consisting of Al, Ti, Cr, Cu, Zr, Zn, Ag, Sn, Ta, Pt, In, Ga, Ce, Y or any combination of two or more thereof.
  • the substance or substances are to be included in the thin film found on the substrate surface.
  • a method of depositing a thin film onto a substrate surface through high power pulsed magnetron sputtering comprising the steps of:
  • a target which constitutes a cathode or is connected to a cathode and is formed at least in part from a material(s) to be included in the thin film;
  • the step of preventing negative ions from reaching the substrate surface may comprise shielding of the negative ions.
  • the step of guiding the plasma towards the substrate surface may comprise altering the main direction of plasma propagation.
  • Fig. 1 shows a schematic cross-sectional view of an arrangement for high power pulsed magnetron sputtering with a substantially cylindrical target for deposition of a thin film onto a substrate surface.
  • Fig. 2 shows a schematic cross-sectional view of an arrangement for high power pulsed magnetron sputtering with a substantially flat target for deposition of a thin film onto a substrate surface.
  • FIG. 1 and Fig. 2 Cross- sectional views of two different arrangements 1 a, 1 b for high power pulsed magnetron sputtering for deposition of a thin film onto a substrate 2 surface are schematically shown in Fig. 1 and Fig. 2.
  • the substrate 2 may be all kind of substrates, such as metallic, ceramic, plastics and glass substrates.
  • the substrate may be a stationary substrate or a substrate which is movable beneath the sputtering target, e.g. in a reel-to-reel arrangement.
  • the target 3a, 3b used may be formed at least in part from AS, Ti, Cr, Cu, Zr, Zn, Ag, Sn, Ta, Pt, In, Ga, Ce, Y or combinations of two or more thereof. These materials are to be included in the thin film which is to be deposited on the substrate 2 surface.
  • the target 3a in Fig. 1 constitutes a cathode, which may be partially surrounded by a ground shield 4. In another embodiment the target may be electrically connected to a cathode.
  • the target is a substantially cylindrical target 3a.
  • Targets with other shapes are, however, possible, such as a semicylindrical target, a partial cylindrical target, polygonal targets, arc- formed targets, rectangular or substantially flat targets 3b (shown in Fig. 2).
  • the targets of the arrangements 1a, 1 b shown in Fig 1 and Fig 2 may be extended in a direction perpendicular to their surface normals.
  • the surface of the target 3a, 3b from which surface atoms are sputtered are in Fig. 1 and Fig. 2 continuous areas. In another embodiment the surface of the target may be faceted.
  • the substantially flat target 3b and the substrate 2 are arranged off-set each other and the target 3b surface has no surface normal pointing towards the substrate 2.
  • the substrate 2 is laterally spaced from the target 3b.
  • the surface normal at the target 3b closest to the substrate 2 may be laterally spaced from the surface normal of the substrate 2 closest to the target 3b.
  • a first magnet assembly 5b is mounted at a small distance from the rear side of the target 3b surface for providing a first magnetic field in a magnetron configuration at the surface of the target 3b.
  • Magnetic north poles, N are here arranged at the periphery of the target 3b and magnetic south poles, S, at the center of the target 3b.
  • the magnetic field lines thus pass from the periphery of the target 3b to the center thereof. It is also possible to position the south poles, S, at the periphery and the north poles, N, in the centre, creating field lines from the center to the periphery of the target 3b.
  • the exact positioning of the magnets in the magnet assembly 5b may different.
  • a first magnet assembly 5a comprising magnetic north- and south poles, N, S, is mounted inside the substantially cylindrical target 3a.
  • the exact positioning of the magnets in the magnet assembly 5a may be different.
  • the substantially cylindrical target 3a in the arrangement in Fig. 1 is a rotating cylindrical target.
  • the rotating cylindrical target may rotate around a stationary magnet assembly.
  • a rotatable cylindrical target has the advantage compared to stationary configurations, that there due to the rotation is a more uniform target erosion during the sputtering, resulting in a more effective target utilization.
  • the rotating substantially cylindrical target may rotate around the stationary magnet assembly with a speed of 1-50 rpm.
  • Fig. 1 or Fig. 2 may be located in a substantially enclosed and evacuable chamber 6 (Fig. 1 ).
  • a sputtering gas may be introduced into the chamber through a gas inlet 7.
  • the sputtering gas may be a mixture of an inert gas with a reactive gas (0 2) N 2 , H 2 S, CH 4 , F, CI, Br, I, etc).
  • Typical mixtures are argon and nitrogen or argon and oxygen, which are known as such.
  • An electric pulsed power supply 8 is connected to an anode, e.g. the evacuable chamber 6 or the ground shield 4, with its positive end and with its negative terminal connected to the target 3a, 3b, which in Fig. 1 constitutes the cathode.
  • the power supply 8 generates high voltage pulses between the anode and cathode 3a, 3b resulting in electric discharges, producing a plasma.
  • the high voltage pulses are e.g. substantially square shaped pulses, and often voltage pulses superimposed on DC voltage. Other alternatives are, however, also possible.
  • a degree of ionization of material sputtered from the target 3a, 3b in the arrangements 1 a, 1 b shown in Fig 1 or Fig. 2 may be at least 20%, at least 40% or at least 60%.
  • An active surface portion of the target is here a portion of the target surface where the momentary target erosion takes place during the sputtering process, i.e. a target erosion area.
  • the target erosion area is the area from which 80 - 90%, 90 - 95% or 95 - 99% of the sputtered material is produced.
  • a momentary peak power density, P peak , at the active surface portion of the target may be about 0.05-100 kW/cm 2 , or about 0.1 -50 kW/cm 2 , or about 0.5-20 kW/cm 2 , or about 1-20 kW/cm 2 , or about 2-20 kW/cm 2 , or about 5-20 kW/cm 2 , or about 5-10 kW/cm 2 .
  • the peak power density, P peak is here to be understood as the peak momentary electric power / ⁇ (/ divided by the area of the active surface portion of the target surface as defined above.
  • a duty cycle, v, 9 , c/e ,of the pulsed power supply may be related to the peak power density at the target in such a way that the product, / ⁇ U ⁇ F D , e , of them, provides a time averaged power in the active surface portion, which may be about 0.01 -500 kW/cm 2 , 0.01-100 kW/cm 2 , or about 0.5-500 kW/cm 2 , or about 0.5-100 kW/cm 2 , or about 1-500 kW/cm 2 , or about 1 -100 kW/cm 2 .
  • the time averaged power in the active surface portion at which damage to the target is incurred normally provides an upper limit to the duty cycle at each given peak power density.
  • the duty cycle range is normally limited upwardly by the power limit (which provides an upper limit) and downwardly by a value which is about 1/10 - 1/20 of the power limit.
  • HiPIMS high power impulse magnetron sputtering
  • the arrangements 1 , 1 b may be operated at a momentary peak power density as described above and/or at a time averaged power as described above.
  • the arrangements 1 a, 1 b shown in Fig. 1 and Fig. 2 are provided with a shield 9a, 9b between the target 3a, 3b and the substrate 2 surface to be coated, shielding the negative ions, allowing a restricted flow between the target 3a, 3b and the substrate 2.
  • the shield may be grounded, a floating ground (electrically isolated from earth) or a shield having an applied voltage.
  • X " By utilizing the main spreading directions of negative ions, X " , from the target surfaces 3a, 3b together with shields (9a, 9b) 10, 20, 30, 40, 50, 60, 70, 80, 90 or 100% of all negative ions present in the arrangements 1 a, 1 b may be prevented from reaching the substrate 2 surface.
  • the shield 9a, 9b in Fig. 1 and Fig. 2 comprises an apertured constriction.
  • An aperture area 10a, 10b of the apertured constriction may be substantially circular, elliptical, or elongate, and is preferably adapted to the shape of the target 3a, 3b and the negative ion distribution pattern therefrom. In one embodiment the aperture area may be adjustable.
  • the arrangements 1 a, 1 b in Fig. 1 and Fig. 2 are further provided with a guide 11a, 1 1 b between the substrate 2 and the target surface 3a, 3b arranged to confine and guide the plasma, but not negative ions or uncharged atoms past the shield 9a, 9b.
  • the guide 11 a, 11 b provides a second magnetic field.
  • the negative ions may be considered a part of the plasma, but are due to their large mass, compared to the mass of the electrons of the plasma, not easily guided by the applied second magnetic field.
  • the positive ions of the plasma, Me + including material sputtered from the target 3b, are guidable due to electronic interactions and, hence, travels with the plasma in the main direction of plasma propagation towards the substrate 2 surface.
  • the guide 11a, 1 1 b is here comprised of a solenoid, which is connected to a DC power supply (not shown) to generate a controlled second magnetic field. More than one solenoid may be connected in series in other embodiments.
  • the shield 9a, 9b in Fig, 1 and Fig. 2 is integrated with the guide 1 1a, 1 1 b and is made of the same part, i.e. the solenoid constitutes both the shield 9a, 9b and the guide 11a, 1 1 b and constitutes a surface for catching ions.
  • the shield 9a, 9b and the guide 11 a, 1 1 b may be separate parts. In yet an embodiment the shield 9a, 9b and guide 1 1a, 11 b may be two parts permanently connected.
  • the guide 11 b is arranged to alter the main direction of plasma propagation, which direction is indicated in the figure.
  • the plasma has to be deflected in order to pass the shield 9b and reach the substrate 2 surface.
  • the directions of the negative ions, X " are not altered in the same way and continue in there determined directions which do not coincide with the main direction of plasma propagation.
  • Fig. 1 also here the main direction of plasma propagation and the main spreading directions of negative ions, X " , do not coincide.
  • the shape of the target 3a surface having active surface portions from which material is sputtered determines the directions of the negative ions, X " , from the target 3a, 3b surface.
  • the guide 11a is arranged along a shortest distance between the substrate 2 and the target 3a.
  • the guide 11 a, 11b may be arranged offset a shortest distance between the substrate 2 and the target 3a, 3b.
  • the said at least a portion of a distance between the target 3a, 3b and the substrate 2 may be 10, 20, 30, 40, 50, 60, 70, 80, 90 or 100% of a total distance between the target 3a, 3b and the substrate 2.
  • An angular deviation between the main direction of plasma propagation and the surface normal of a surface portion of the target 3a, 3b may be 5°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80°, 90° or 100°.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
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  • Materials Engineering (AREA)
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Abstract

La présente invention concerne un agencement (1a, 1b) pour pulvérisation magnétron pulsée à forte puissance destinée au dépôt d'un film mince sur la surface d'un substrat (2). L'agencement (1a, 1b) est pourvu d'un guide (11a, 11b) entre la cible (3a, 3b) et le substrat (2), fournissant un champ magnétique qui guide le plasma en direction de la surface du substrat (2), toutes les perpendiculaires à la surface d'une partie de surface active de ladite cible (3a, 3b) étant dirigées de telle sorte que des ions négatifs se déplaçant le long de telles perpendiculaires à la surface sont empêchés d'atteindre ledit substrat (2). L'agencement est de plus pourvu d'un moyen pour empêcher une partie importante des ions négatifs d'atteindre la surface du substrat (2). Ainsi, les effets néfastes sur le film en croissance sur le substrat (2) des ions négatifs produits par le processus de pulvérisation magnétron pulsée à forte puissance, sont réduits. L'invention concerne également un procédé de dépôt d'un film mince sur un substrat (2) par l'intermédiaire d'une pulvérisation magnétron pulsée à forte puissance telle que les effets néfastes sur le film en croissance des ions négatifs produits par le procédé sont réduits.
PCT/SE2014/050292 2013-03-13 2014-03-11 Agencement et procédé pour pulvérisation magnétron pulsée à forte puissance WO2014142737A1 (fr)

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SE1350301 2013-03-13

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021053115A1 (fr) 2019-09-18 2021-03-25 Danmarks Tekniske Universitet Agencement de pulvérisation de plasma par magnétron
CN114908324A (zh) * 2022-03-23 2022-08-16 广州益华数字科技有限公司 一种Pt热阻薄膜的制备方法
WO2023020709A1 (fr) * 2021-08-18 2023-02-23 Applied Materials, Inc. Procédé de dépôt de matériau sur un substrat, et système configuré pour déposer un matériau sur un substrat avec des cibles de pulvérisation en regard

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US20070256927A1 (en) * 2004-06-24 2007-11-08 Metaplas Ionon Oberflaechenveredelungstechnik Gmbh Coating Apparatus for the Coating of a Substrate and also Method for Coating
WO2011130092A1 (fr) * 2010-04-14 2011-10-20 The Regents Of The University Of California Procédé et appareil pour pulvérisation cathodique avec une lentille plasma
WO2012138279A1 (fr) * 2011-04-07 2012-10-11 Plasmadvance Ab Procédé de pulvérisation permettant de pulvériser une cible de carbone

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US20040020760A1 (en) * 2000-06-19 2004-02-05 Vladimir Kouznetsov Pulsed highly ionized magnetron sputtering
US6503380B1 (en) * 2000-10-13 2003-01-07 Honeywell International Inc. Physical vapor target constructions
US20070256927A1 (en) * 2004-06-24 2007-11-08 Metaplas Ionon Oberflaechenveredelungstechnik Gmbh Coating Apparatus for the Coating of a Substrate and also Method for Coating
WO2011130092A1 (fr) * 2010-04-14 2011-10-20 The Regents Of The University Of California Procédé et appareil pour pulvérisation cathodique avec une lentille plasma
WO2012138279A1 (fr) * 2011-04-07 2012-10-11 Plasmadvance Ab Procédé de pulvérisation permettant de pulvériser une cible de carbone

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Title
ANDRÉ, A ET AL.: "A Plasma Lens for Magnetron Sputtering", IEEE TRANSACTIONS ON PLASMA SCIENCE, vol. 39, no. 11, November 2011 (2011-11-01), pages 2528 - 2529 *
MAHIEU, S ET AL.: "Modeling the flux of high energy negative ions during reactive magnetron sputtering", JOURNAL OF APPLIED PHYSICS, vol. 106, 2009, pages 093302 - 1 -093302-7 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021053115A1 (fr) 2019-09-18 2021-03-25 Danmarks Tekniske Universitet Agencement de pulvérisation de plasma par magnétron
WO2023020709A1 (fr) * 2021-08-18 2023-02-23 Applied Materials, Inc. Procédé de dépôt de matériau sur un substrat, et système configuré pour déposer un matériau sur un substrat avec des cibles de pulvérisation en regard
CN114908324A (zh) * 2022-03-23 2022-08-16 广州益华数字科技有限公司 一种Pt热阻薄膜的制备方法

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