WO2014128833A1

WO2014128833A1 - Copper foil for graphene production, and graphene production method

Info

Publication number: WO2014128833A1
Application number: PCT/JP2013/054001
Authority: WO
Inventors: 倫也古曳; 和彦坂口
Original assignee: Jx日鉱日石金属株式会社
Priority date: 2013-02-19
Filing date: 2013-02-19
Publication date: 2014-08-28

Abstract

[Problem] To provide a copper foil for graphene production and a graphene production method using the copper foil, whereby it is possible to produce high-quality large-area graphene at a low cost. [Solution] A copper foil (10) for graphene production which has a surface roughness (Rz) of 0.5 μm or less, with at least 60% of the surface being constituted by the (111) plane.

Description

Copper foil for producing graphene and method for producing graphene

The present invention relates to a copper foil for producing graphene and a method for producing graphene.

Graphite has a layered structure in which a number of flat carbon 6-membered ring layers are stacked, but those with a single atomic layer to several atomic layers are called graphene or graphene sheets. Graphene sheets have unique electrical, optical and mechanical properties, and in particular have a high carrier moving speed. Therefore, graphene sheets are expected to have a wide range of applications in the industry, such as fuel cell separators, transparent electrodes, conductive thin films for display elements, mercury-free fluorescent lamps, composite materials, and drug delivery system (DDS) carriers. ing.

As a method of producing a graphene sheet, a method of peeling graphite with an adhesive tape is known, but the number of layers of the obtained graphene sheet is not constant, it is difficult to obtain a large area graphene sheet, and it is not suitable for mass production There's a problem.
Thus, a technique (chemical vapor deposition (CVD) method) has been developed in which a graphene sheet is grown by bringing a carbon-based material into contact with a sheet-like single crystal graphitized metal catalyst and then performing heat treatment (Patent Literature). 1). As this single crystal graphitized metal catalyst, a metal substrate of Ni, Cu, W or the like is described.
Similarly, a technique for forming graphene by chemical vapor deposition on a copper layer formed on a Ni or Cu metal foil or Si substrate has been reported. The graphene film is formed at about 1000 ° C. (Non-patent Document 1).

JP 2009-143799 A

However, as in Patent Document 1, it is not easy to manufacture a single crystal metal substrate, which is extremely expensive, and it is difficult to obtain a large-area substrate, and thus it is difficult to obtain a large-area graphene sheet. . In addition, when graphene is formed by chemical vapor deposition using Ni metal foil, carbon is dissolved in Ni, and then the carbon in Ni is reprecipitated in the process of cooling, so the number of graphene layers is There is a problem of non-uniformity.
On the other hand, Non-Patent Document 1 describes that Cu is used as a substrate, but graphene does not grow in the surface direction in a short time on the Cu foil, and the Cu layer formed on the Si substrate is annealed. The substrate is formed as coarse particles. In this case, the size of graphene is limited by the Si substrate size, and the manufacturing cost is high.
Therefore, as a result of intensive studies on the copper foil as a base material for graphene growth, the present inventors have invented a copper foil in which the copper foil surface is extremely smooth and the plane orientation of the copper layer is uniform. By using the copper foil, a factor that hinders the growth of graphene is suppressed, and uniform graphene is formed on the surface of the copper foil.
That is, an object of the present invention is to provide a copper foil for producing graphene that can produce large-area graphene at high quality and at low cost.

The copper foil for producing graphene of the present invention has a surface roughness Rz of 0.5 μm or less, and the (111) plane ratio occupies 60% or more on the surface.

Further, the copper foil for producing graphene of the present invention is formed by forming a Cu plating layer and / or a Cu sputter layer on the surface of the copper foil base material, the surface roughness Rz is 0.5 μm or less, and (111) The percentage of the surface occupies 60% or more.
It is preferable that the copper foil base material is an electrolytic copper foil.
It is preferable to form the Cu plating layer and / or the Cu sputter layer on the drum surface side of the electrolytic copper foil.

The graphene production method of the present invention uses the graphene production copper foil, arranges the heated graphene production copper foil in a predetermined chamber, supplies hydrogen gas and a carbon-containing gas, and supplies the graphene. A graphene forming step of forming graphene on the surface of the copper plating layer of the copper foil for manufacturing, a transfer sheet is laminated on the surface of the graphene, and the graphene manufacturing copper foil is transferred while transferring the graphene onto the transfer sheet And a graphene transfer step of removing by etching.

According to the present invention, a copper foil capable of producing a large area graphene with high quality and low cost can be obtained.

It is process drawing which shows the manufacturing method of the graphene which concerns on embodiment of this invention.

Hereinafter, a copper foil for producing graphene and a method for producing graphene according to embodiments of the present invention will be described. In the present invention, “%” means “% by mass” unless otherwise specified.

As the copper foil for producing graphene of the present invention, an electrolytic copper foil or a rolled copper foil can be used. The composition of the copper foil is preferably 99.8% or more in purity, and the thickness of the copper foil is not particularly limited, but is generally 5 to 150 μm. Furthermore, it is preferable to set the thickness of the copper foil to 12 to 50 μm in order to facilitate the etching removal described later while ensuring handling properties. If the thickness of the copper foil is less than 12 μm, it may be easily broken and inferior in handleability, and if the thickness exceeds 50 μm, it may be difficult to remove by etching.

The copper foil for producing graphene of the present invention has a surface roughness Rz of 0.5 μm or less, and the (111) plane accounts for 60% or more on the surface. This is because the smoother the copper foil surface, the fewer steps that hinder the growth of graphene, and the graphene film is uniformly formed on the copper foil surface. In addition, by setting the ratio of the (111) plane to 60% on the surface and increasing the orientation to the (111) plane, the graphene grows stably on the surface. Note that the ratio of the (111) plane on the copper foil surface is preferably 70% or more, more preferably 80% or more, and more preferably 90% or more.
In addition, although it is not necessary to provide the upper limit of the ratio of the (111) plane on the copper foil surface, it is preferably 99.9% or less, more preferably 99% or less in consideration of manufacturability and the like.
Rz is a ten-point average roughness measured in accordance with JIS B0601-1994. In the case of electrolytic copper foil, Rz is measured in the direction perpendicular to the drum rotation direction, and in the case of rolled copper foil, Rz is measured in the vertical direction of rolling.

By the way, it is not easy to smooth the Rz of the surface of the copper foil alone to 0.5 μm or less. For example, the drum surface of the electrolytic copper foil (the cathode drum side on which the copper foil is deposited) is smoother than the opposite surface, but the Rz is still about 1.2 to 1.4 μm. The Rz of the rolled copper foil is about 0.7 μm.
Therefore, when a Cu plating layer or a Cu sputter layer is formed on the surface of a copper foil base material made of electrolytic copper foil or rolled copper foil, the surface roughness Rz is 0.5 μm or less, and the (111) surface occupies 60% or more. The surface can be easily formed. In particular, a Cu plating layer or a Cu sputter layer is formed on a smoother surface (for example, a drum surface in the case of electrolytic copper foil) among the front and back surfaces of the copper foil, or Cu is formed on the smooth surface. It is preferable to form a plating layer and form a Cu sputter layer on the Cu plating layer.
In addition, by observing the metal structure of the cross section of Cu layer by FIB etc., it can be determined whether it is a Cu sputtered layer or a Cu plating layer. In general, since the Cu sputtered layer hardly causes recrystallization, the crystal grains are fine. In addition, since the Cu plating layer causes recrystallization, the crystal grains of the Cu plating layer are often larger than the crystal grains observed in the Cu sputter layer.
In addition, although Rz of the surface of copper foil is not specifically limited, when productivity etc. are considered, it is 0.005 micrometer or more, Preferably it is 0.01 micrometer or more, More preferably, it is 0.05 micrometer or more.
In order to make the Rz of the copper foil surface about 0.01 μm, for example, an electrolytic copper foil is manufactured using a cathode drum having a mirror finish to reduce the roughness of the copper foil substrate itself, or to a mirror finish. The rolled copper foil is manufactured using the rolled roll to reduce the roughness of the copper foil base itself, and the Cu plating layer and the Cu sputtered layer are sufficiently thick on the copper foil base as described above (for example, about 20 μm). There is a method of forming the film.
The composition and thickness of the copper foil base material may be the same as the values of the copper foil alone.

The Cu plating layer can be formed by known bright copper plating. The bright copper plating can be formed by electroplating using a commercially available copper sulfate plating bath containing a brightener. Examples of plating bath compositions include Cu ions: 70-100 g / L, sulfuric acid: 80-100 g / L, Cl ions: 40-80 mg / L, bis (3-sulfopropyl) disulfide disodium: 10-30 mg / L L, dialkylamino group-containing polymer (weight average molecular weight 8500): 10 to 30 mg / L. The plating conditions can be, for example, an average current density of 20 to 100 A / dm 2 and a plating bath temperature of 45 to 65 ° C. The thickness of the Cu plating layer can be, for example, 10 to 20 μm.

The thickness of the Cu sputter can be set to 0.1 to 1.0 μm, for example. The sputtering conditions can be, for example, a discharge voltage of 500 to 700 V, a discharge current of 15 to 25 A, and a degree of vacuum of 3.9 to 6.7 × 10 ⁻² Pa in Ar gas using a Cu target.
Furthermore, the above-mentioned Cu plating layer and Cu sputtered layer may be laminated, and any of them may be an upper layer.

By using the graphene-producing copper foil specified as described above, large-area graphene can be produced at high quality and at low cost.

<Manufacture of copper foil for graphene production>
The copper foil for producing graphene according to the embodiment of the present invention can be produced, for example, as follows. First, after manufacturing the copper ingot of a predetermined composition and performing hot rolling, annealing and cold rolling are repeated and a rolled sheet is obtained. The rolled sheet is annealed and recrystallized, and finally cold-rolled to a predetermined thickness with a reduction ratio of 80 to 99.9% (preferably 85 to 99.9%, more preferably 90 to 99.9%). To obtain copper foil.
Moreover, an electrolytic copper foil can be manufactured by supplying an electrolytic solution between a rotating cathode drum and an anode opposite to the rotating cathode drum, and depositing the electrolytic copper foil on the drum surface that becomes the cathode.
By forming a Cu plating layer and / or a Cu sputter layer on the smooth surface of the copper foil, a graphene copper foil having a smoother surface layer than the copper foil itself is obtained.

<Graphene production method>
Next, with reference to FIG. 1, a method for producing graphene according to an embodiment of the present invention will be described.
First, the graphene producing copper foil 10 of the present invention described above is placed in a chamber (vacuum chamber or the like) 100, the graphene producing copper foil 10 is heated by the heater 104, and the inside of the chamber 100 is decompressed or evacuated. . Then, the carbon-containing gas G is supplied together with hydrogen gas from the gas inlet 102 into the chamber 100 (FIG. 1A). Examples of the carbon-containing gas G include, but are not limited to, carbon dioxide, carbon monoxide, methane, ethane, propane, ethylene, acetylene, alcohol, and the like. Good. Further, the heating temperature of the graphene-producing copper foil 10 may be equal to or higher than the decomposition temperature of the carbon-containing gas G, for example, 1000 ° C. or higher. Further, the carbon-containing gas G may be heated to a decomposition temperature or higher in the chamber 100, and the decomposition gas may be brought into contact with the copper foil 10 for producing graphene. At this time, by heating the copper foil 10 for producing graphene, the copper plating layer and / or the sputtered copper layer is in a semi-molten state and flows into the recesses on the surface of the copper foil. Unevenness is reduced. Then, the cracked gas (carbon gas) comes into contact with the smooth surface of the graphene-producing copper foil 10 as described above, and the graphene 20 is formed on the surface of the graphene-producing copper foil 10 (FIG. 1B).

And the copper foil 10 for graphene manufacture is cooled to normal temperature, the transfer sheet 30 is laminated | stacked on the surface of the graphene 20, and the graphene 20 is transcribe | transferred on the transfer sheet 30. FIG. Next, this laminated body is continuously immersed in the etching tank 110 through the sink roll 120, and the copper foil 10 for graphene production is removed by etching (FIG. 1C). Thus, the graphene 20 laminated on the predetermined transfer sheet 30 can be manufactured.
Furthermore, when the laminated body from which the copper foil 10 for producing graphene is removed is pulled up, the substrate 40 is laminated on the surface of the graphene 20, and the transfer sheet 30 is peeled off while transferring the graphene 20 onto the substrate 40, The stacked graphene 20 can be manufactured.

As the transfer sheet 30, various resin sheets (polymer sheets such as polyethylene and polyurethane) can be used. As an etching solution for etching and removing the copper foil 10 for producing graphene, for example, a sulfuric acid solution, a sodium persulfate solution, hydrogen peroxide, a sodium persulfate solution, or a solution obtained by adding sulfuric acid to hydrogen peroxide can be used. As the substrate 40, for example, Si, SiC, Ni, or Ni alloy can be used.

<Preparation of sample>
As the copper foil base material, the electrolytic copper foil is a JTC (product name) foil having a thickness of 18 μm manufactured by JX Nippon Mining & Metals, and the rolled copper foil is a tough pitch copper (JIS H3100 alloy manufactured by JX Nippon Mining & Metals). A foil having a thickness of 18 μm consisting of number C1100 (hereinafter referred to as “TPC”) was used.

<Example 1>
On the drum surface side of the electrolytic copper foil substrate of Table 1, a 6 μm thick Cu electroplating layer was formed by the following Cu plating bath. The plating bath temperature was 55 ° C., and the average current density during plating was 50 A / dm 2.
Cu plating bath: Cu ion 100 g / L, sulfuric acid 80 g / L, Cl ion 50 mg / L, bis (3-sulfopropyl) disulfide disodium 30 mg / L, dialkylamino group-containing polymer (weight average molecular weight 8500) 30 mg / L L
<Example 2>
A Cu electroplating layer having a thickness of 4 μm was formed on the drum surface side of the electrolytic copper foil substrate of Table 1 by the following Cu plating bath. The plating bath temperature was 55 ° C., and the current density during plating was 30 A / dm 2.
Cu plating bath: Cu ion 100 g / L, sulfuric acid 80 g / L, Cl ion 50 mg / L, bis (3-sulfopropyl) disulfide disodium 10 mg / L, dialkylamino group-containing polymer (weight average molecular weight 8500) 10 mg / L L
<Example 3>
A Cu electroplating layer having a thickness of 10 μm was formed on the drum surface side of the electrolytic copper foil substrate of Table 1 by the following Cu plating bath. The plating bath temperature was 55 ° C., and the average current density during plating was 50 A / dm 2.
Cu plating bath: Cu ion 100 g / L, sulfuric acid 80 g / L, Cl ion 50 mg / L, bis (3-sulfopropyl) disulfide disodium 20 mg / L, dialkylamino group-containing polymer (weight average molecular weight 8500) 20 mg / L L

<Example 4>
A Cu electroplating layer having a thickness of 6 μm was formed on the electrolytic copper foil base material drum surface side of Example 1, and a Cu sputtering layer having a thickness of 0.5 μm was formed on the Cu electroplating layer by Cu sputtering.
Cu sputtering conditions: Ar gas, discharge voltage 500V, discharge current 15A, degree of vacuum 5 × 10 ⁻² Pa
<Example 5>
On the surface of the rolled copper foil base material of Table 1, a 0.5 μm Cu sputter layer was formed by Cu sputtering.
Cu sputtering conditions: Ar gas, discharge voltage 500V, discharge current 15A, degree of vacuum 5 × 10 ⁻² Pa
<Example 6>
A Cu electroplating layer having a thickness of 20 μm was formed on the electrolytic copper foil base drum surface side of Example 1, and a Cu sputter layer having a thickness of 2.0 μm was formed on the Cu electroplating layer by Cu sputtering.
Cu sputtering conditions: Ar gas, discharge voltage 500V, discharge current 15A, degree of vacuum 5 × 10 ⁻² Pa.

<Comparative Example 1>
The electrolytic copper foil of Table 1 was used as it was.
<Comparative example 2>
The rolled copper foil of Table 1 was used as it was.

<Surface orientation>
The X-ray diffraction integrated intensities of the (111), (200), (311), (220), and (331) planes of the surface of the obtained sample were measured. For the measurement, RINT 2500 made by Rigaku was used, the X-ray irradiation conditions were a Co tube, tube voltage 25 KV, tube current 20 mA.
And the ratio of the (111) plane of the surface was computed with the following formula | equation.
Ratio of surface (111) plane (%) = (111) plane X-ray diffraction integrated intensity (−) / {(111) plane X-ray diffraction integrated intensity (−) + (200) plane X-ray diffraction integral Intensity (−) + (311) plane X-ray diffraction integral intensity (−) + (220) plane diffraction integral intensity (−) + (331) plane X-ray diffraction integral intensity (−)} × 100

<Measurement of surface roughness (Rz)>
The surface roughness of the obtained sample was measured.
Using a non-contact laser surface roughness meter (confocal microscope (HD100D manufactured by Lasertec Corporation), ten-point average roughness (Rz) was measured according to JIS B0601-1994. Measurement standard length 0.8 mm, The measurement position was changed 10 times under the conditions of an evaluation length of 4 mm, a cut-off value of 0.8 mm, and a feed rate of 0.1 mm / second, and values were obtained for 10 measurements in the following directions.
In addition, when the copper foil base material was an electrolytic copper foil, Rz was measured in a direction perpendicular to the drum rotation direction, and when the copper foil base material was a rolled copper foil, Rz was measured in the vertical direction of rolling.

<Manufacture of graphene>
The copper foil for producing graphene of each example (vertical and horizontal 100 × 100 mm) was placed in a vacuum chamber and heated to 1000 ° C. Hydrogen gas and methane gas are supplied to this vacuum chamber under vacuum (pressure: 0.2 Torr) (supply gas flow rate: 10 to 100 cc / min), and the copper foil is heated to 1000 ° C. in 30 minutes and then held for 1 hour. Then, graphene was grown on the copper foil surface.
After sticking a PET film on the graphene side of the copper foil with graphene grown on the surface and etching away the copper foil with acid, the sheet resistance of the graphene was measured by a four-probe method. Note that the etching reaction time was determined in advance by investigating the relationship between the reaction time and the sheet resistance and stabilizing the sheet resistance.
If the sheet resistance of graphene is 400Ω / □ or less, there is no practical problem.

The results obtained are shown in the table.

As is clear from Table 1, in each of the examples in which the surface roughness Rz is 0.5 μm or less and the (111) plane occupies 60% or more on the surface, the sheet resistance of graphene is 400 Ω / □ or less, The quality was excellent.

On the other hand, in the case of Comparative Example 1 in which the surface roughness Rz exceeds 0.5 μm and the (111) plane is less than 60% on the surface, the sheet resistance of graphene exceeds 400Ω / □, and the quality of graphene is inferior.
Further, in Comparative Example 2 where the surface roughness Rz exceeded 0.5 μm, the sheet resistance of graphene exceeded 400Ω / □, and the quality of graphene was inferior.

10 Copper foil for graphene production 20 Graphene 30 Transfer sheet

Claims

A graphene-producing copper foil having a surface roughness Rz of 0.5 μm or less and a (111) plane ratio of 60% or more on the surface.
For the production of graphene, which is formed by forming a Cu plating layer and / or a Cu sputter layer on the surface of a copper foil substrate, the surface roughness Rz is 0.5 μm or less, and the proportion of the (111) plane accounts for 60% or more on the surface Copper foil.
The copper foil for producing graphene according to claim 2, wherein the copper foil base material is an electrolytic copper foil.
The copper foil for producing graphene according to claim 3, wherein the Cu plating layer and / or the Cu sputter layer is formed on the drum surface side of the electrolytic copper foil.
A method for producing graphene using the copper foil for producing graphene according to any one of claims 1 to 4,
A graphene forming step of arranging the heated copper foil for producing graphene in a predetermined chamber and supplying a hydrogen gas and a carbon-containing gas, and forming graphene on the surface of the copper plating layer of the copper foil for producing graphene,
A graphene transfer process comprising: laminating a transfer sheet on the surface of the graphene; and transferring the graphene onto the transfer sheet while etching and removing the copper foil for producing graphene.