WO2014117614A1 - 限制线路电流或使电流分断的装置及其控制方法 - Google Patents

限制线路电流或使电流分断的装置及其控制方法 Download PDF

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Publication number
WO2014117614A1
WO2014117614A1 PCT/CN2013/090615 CN2013090615W WO2014117614A1 WO 2014117614 A1 WO2014117614 A1 WO 2014117614A1 CN 2013090615 W CN2013090615 W CN 2013090615W WO 2014117614 A1 WO2014117614 A1 WO 2014117614A1
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Prior art keywords
current
branch
breaking
power semiconductor
semiconductor device
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PCT/CN2013/090615
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English (en)
French (fr)
Inventor
王宇
曹冬明
方太勋
杨浩
杨兵
石巍
吕玮
Original Assignee
南京南瑞继保电气有限公司
南京南瑞继保工程技术有限公司
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Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=51242078&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2014117614(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 南京南瑞继保电气有限公司, 南京南瑞继保工程技术有限公司 filed Critical 南京南瑞继保电气有限公司
Priority to ES13873552.7T priority Critical patent/ES2647156T3/es
Priority to KR1020157023625A priority patent/KR101720112B1/ko
Priority to EP13873552.7A priority patent/EP2953150B1/en
Priority to RU2015130271A priority patent/RU2614807C2/ru
Priority to US14/764,575 priority patent/US9362734B2/en
Priority to NO13873552A priority patent/NO2953150T3/no
Priority to BR112015018164-3A priority patent/BR112015018164B1/pt
Priority to AU2013376519A priority patent/AU2013376519B2/en
Priority to DK13873552.7T priority patent/DK2953150T3/da
Publication of WO2014117614A1 publication Critical patent/WO2014117614A1/zh

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541Contacts shunted by semiconductor devices
    • H01H9/542Contacts shunted by static switch means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H33/00High-tension or heavy-current switches with arc-extinguishing or arc-preventing means
    • H01H33/02Details
    • H01H33/59Circuit arrangements not adapted to a particular application of the switch and not otherwise provided for, e.g. for ensuring operation of the switch at a predetermined point in the ac cycle
    • H01H33/596Circuit arrangements not adapted to a particular application of the switch and not otherwise provided for, e.g. for ensuring operation of the switch at a predetermined point in the ac cycle for interrupting dc
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H71/00Details of the protective switches or relays covered by groups H01H73/00 - H01H83/00
    • H01H71/10Operating or release mechanisms
    • H01H71/1045Multiple circuits-breaker, e.g. for the purpose of dividing current or potential drop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/548Electromechanical and static switch connected in series
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H2009/0083Details of switching devices, not covered by groups H01H1/00 - H01H7/00 using redundant components, e.g. two pressure tubes for pressure switch

Definitions

  • the present invention relates to a device for limiting or breaking a line current, and a method of controlling the device. Background technique
  • high-voltage DC circuit breakers are one of the most important devices. Due to the high voltage level and low line impedance, the multi-terminal HVDC transmission system will soon affect the DC transmission network and the AC network, and the fault must be quickly removed. Therefore, the high-voltage DC circuit breaker needs to have a fast moving speed, which can minimize the duration of the fault or suppress the fault current, and reduce the impact of the fault on the AC/DC transmission network. Since the high-voltage DC circuit breaker is connected in series to the transmission line, the direction of the power flow in the transmission line is uncertain, and the current may exist in two directions. Therefore, the circuit breaker is required to be able to separate the direct current in both directions.
  • Chinese patent application CN 102780200 A uses a conventional high-voltage DC circuit breaker to break the DC current.
  • the conventional high-voltage DC circuit breaker structure consists of three parts: an AC circuit breaker, an LC oscillation circuit and an energy consuming component.
  • an AC circuit breaker When the AC circuit breaker is separated, an arc is generated, and the arc voltage resonates with the LC oscillation circuit.
  • the peak value of the oscillating current reaches the DC current amplitude, the DC current can be completely cancelled, causing the circuit breaker port to have a zero-crossing point, causing the arc to extinguish and achieving the shutdown DC current.
  • This type of breaking does not include power semiconductor devices, and has no directionality.
  • the traditional high-voltage DC circuit breaker has a long arc-extinguishing time of about several tens of milliseconds, which cannot meet the requirements of fast isolation of multi-terminal DC transmission system faults.
  • the Chinese patent application CN 102687221 A discloses a device and method for short-circuiting the current of a transmission line or a distribution line, and a current limiting arrangement, including a main breaker, a high-speed switch. , auxiliary circuit breakers and varistor energy consuming components.
  • a main breaker In normal operation mode, the line current flows through the auxiliary circuit, and the on-state loss is small.
  • the current is switched to the main breaker, and finally the energy-consuming component absorbs the breaking capacity.
  • the main circuit breaker After the high-voltage DC circuit breaker turns off the fault current, the main circuit breaker is subjected to hundreds of kV voltages, and the number of power semiconductor devices connected in series is only several hundred in one current direction. Since the power semiconductor device can only be turned on in one direction, in order to enable the fault current to be turned off in both current directions, the main series circuit of the main circuit breaker in the high voltage DC circuit breaker employs two power semiconductor devices in anti-series or reverse In the parallel configuration, the number of power semiconductor devices of the main circuit breaker is doubled. When the first current direction is divided, the power semiconductor device in the second current direction is divided into currents or The withstand voltage has no beneficial effect, which is equivalent to the utilization of the main circuit breaker power semiconductor device is only 50%.
  • the cost of the power semiconductor device occupies a large proportion in the total cost of the device, the cost of the device is greatly increased in order to realize the breaking function of the bidirectional current.
  • the increase of the power semiconductor device in the second current direction of the main circuit breaker not only does not have a beneficial effect, but the power semiconductor device in the second current direction is adversely affected by the overvoltage and overcurrent generated when the first current direction is turned off. .
  • the overvoltage when the first current direction is turned off is applied to the power semiconductor device in the second current direction,
  • the voltage is a reverse voltage for the power semiconductor device in the second current direction, causing damage to the device;
  • the power semiconductor device with the anti-parallel diode of the second current direction and the anti-parallel diode with the first current direction are used
  • the power semiconductor device is connected in reverse series, and a very high abrupt current generated during the first current direction turn-off will flow through the freewheeling diode in the power semiconductor device in the second current direction, which will cause the lifetime of the device. Negative Effects.
  • the increased power semiconductor device in the second current direction also adversely affects the structural design and electrical design of the main circuit breaker, and the arrangement direction of the power semiconductor devices in the first current direction is uniform, so that the electrical design and the structural design are consistent. Sex.
  • the increase in the power semiconductor device in the second current direction destroys the consistency of the original layout direction, resulting in an increase in the difficulty in device layout, mounting, and wiring.
  • the ultra-high-speed mechanical switch in the auxiliary circuit breaker branch of the Chinese patent application CN 102687221A is in parallel relationship with the main circuit breaker.
  • the ultra-high-speed mechanical switch cannot completely block the equipment, protect the main circuit breaker, and the main circuit breaker has no obvious break point, which is not conducive to overhaul. And maintenance. Summary of the invention
  • the object of the present invention is to provide a device for limiting or breaking a line current and a control method thereof, which can adapt to the bidirectional current of the line, and greatly reduce the cost of the device under the premise of ensuring a fast breaking speed and low loss. , to reduce the difficulty of device device layout, installation and wiring.
  • the solution adopted by the present invention is:
  • a device for limiting or breaking a line current comprising a breaking current branch, the breaking current branch comprising a breaking unit or a series connection of at least two breaking units, each of the breaking units comprising a solid state DC circuit breaker Parallel connection with a varistor;
  • a bridge branch is further included, the bridge branch includes two bridge arms formed by four identical current commutation branches, and the four current commutating branches are connected in series in the same direction.
  • the two bridge arms are further connected in parallel, and the two bridge arms are connected in parallel with the breaking current branch, and the midpoints of the bridge arms of the two bridge arms are respectively connected to both ends of the line;
  • the commutating branches each include at least one high speed isolating switch and at least one bidirectional power semiconductor switch connected in series; the defined current is entered by the midpoint of the bridge arm of the first bridge arm, and sequentially flows through the first current commutation branch of the first bridge arm.
  • the direction of the fourth current commutating branch in the second branch arm is the first current direction, and the defined current is entered by the midpoint of the bridge arm of the second bridge arm, and sequentially flows through the second bridge arm.
  • the direction of the three current commutating branch, the breaking current branch, and the second current commutating branch of the first arm is the second
  • the bidirectional power semiconductor switch is formed by antiparallel connection of two power semiconductor devices, and the second power semiconductor device has an on-off capability; the first power semiconductor device and the second current commutation branch in the first current commutation branch
  • the second power semiconductor device in the circuit, the second power semiconductor device in the third current commutation branch, and the first power semiconductor device in the fourth current commutation branch are in the same direction as the first current, the first current commutation branch a second power semiconductor device in the circuit, a first power semiconductor device in the second current commutation branch, a first power semiconductor device in the third current commutation branch, and a second power semiconductor device in the fourth current commutation branch
  • the second current direction is the same.
  • Each of the current commutating branches further includes at least one second bidirectional power semiconductor switch, the second bidirectional power semiconductor switch having the same structure as the bidirectional power semiconductor switch and connected in parallel with the same direction.
  • the first power semiconductor device described above does not have an on-off capability.
  • the above solid state DC circuit breaker is formed by connecting at least one power semiconductor device in series in the same direction.
  • a control method for breaking current by using the foregoing device the device is connected in series to a current path of a line, a solid-state DC circuit breaker in the breaking current branch is closed, a high-speed isolating switch and a bidirectional power in a current commutating branch
  • the semiconductor switch is closed, and the control method includes the following steps:
  • the high-speed isolating switch in the second and third current commutation branches is disconnected to complete the entire breaking process.
  • a control method for limiting line current using the foregoing device the device is connected in series to a current path of the line, the solid state DC circuit breaker in the breaking current branch is closed, the high speed isolating switch in the current commutating branch and the bidirectional power
  • the semiconductor switch is closed, the method comprising the steps of:
  • At least one solid state DC circuit breaker in the breaking current branch is disconnected, thereby converting the current to at least one non-linear resistor in the breaking current branch, thereby achieving the purpose of limiting the line current.
  • the current commutating branch can bypass the breaking current branch, and the line current flows through a high-speed isolating switch with almost zero impedance and a small amount of power semiconductor devices with small conduction voltage drop.
  • the breaking current branch is routed to require a higher conduction voltage drop, almost no current flows, and the total loss of the device is low.
  • the breaking speed is faster.
  • the power semiconductor device is used as the breaking current execution unit, and the speed is very fast.
  • the breaking speed of the power semiconductor device takes only tens of microseconds, which can be neglected, and the total breaking of the device.
  • the time is mainly based on the breaking time of the high-speed isolating switch.
  • the breaking speed of the high-speed isolating switch can reach 1-3ms. It can be predicted that the total breaking time of the device is about 3-5ms, which is much faster than the breaking speed of the traditional high-voltage DC circuit breaker. .
  • the breaking current branch in the present invention is composed of a series of power switching devices in the same current direction, and the bidirectional current in the line flows through the breaking current branch through the current commutating branch. In the same direction.
  • the power semiconductor device (7) in the current commutation branch (A, D) coincides with the first current direction, and the power in the current commutation branch (B, C) is turned off.
  • the semiconductor device (8) causes the power semiconductor device (7) in the current commutation branch (A, D) to be opposite to the first current direction, in a reverse-off state, so that the direction of the branch current flowing through the branch is a slave node (1) to node (2).
  • the current commutation branch (B, C) When the line current is in the second current direction, the current commutation branch (B, C) is in the same direction as the second current, and the power semiconductor device (8) in the current commutation branch (A, D) is turned off to make the current
  • the power semiconductor device (7) in the commutating branch (A, D) is opposite to the second current direction and is in a reverse-off state, so that the direction of flowing through the breaking current branch is from the node (1) to the node (2) . It can be seen that when the direction of the line current is different, the direction of the current flowing through the branch of the breaking current is uniform.
  • the current commutating branch includes a small number of power semiconductor devices and four sets of high-speed isolating switches.
  • the number of power semiconductor devices is small and the cost is very low.
  • the high-speed isolating switches are only separated without current, without arc extinguishing, and only serve to cut off the voltage. Function, lower cost.
  • the overall cost is greatly reduced compared with the Chinese patent application CN 102687221A, which improves the utilization efficiency of the power semiconductor device in the device, and avoids the defect of the bidirectional function of the Chinese patent application CN 102687221A.
  • the high-speed isolating switch in the current commutating branch is separated after the current is disconnected, so that all the power semiconductor devices in the device are completely isolated, safe and reliable, which is convenient for maintenance and maintenance, and no need to Save money by configuring additional isolation gates for the unit.
  • Figure 1 is a schematic view showing the connection of the device of the present invention
  • FIG. 2 is a diagram showing a correspondence relationship between a first current direction and a direction of a power semiconductor device
  • FIG. 3 is a diagram showing a correspondence relationship between a second current direction and a direction of a power semiconductor device
  • Figure 4 is a normal mode diagram of the current commutation branch. detailed description
  • a device 20 for limiting the current of a line 44 or breaking a current including a breaking current branch 29 and a bridge branch, will be separately described below.
  • the breaking current branch 29 includes a series connection of at least one breaking unit, and the two ends are respectively nodes 1, 2, and each of the breaking units includes a parallel connection of a solid-state DC breaker 9 and a non-linear resistor 13, and
  • the solid state DC breaker 9 is formed by connecting at least one power semiconductor device 5 in series, and the solid state DC breaker 9 The direction of arrangement coincides with the direction of current flow from node 1 to node 2.
  • the bridge branch includes two bridge arms composed of four identical current commutation branches A, B, C, and D.
  • the specific connection relationship is: Current commutation branches A and B are connected in series in the same direction. a bridge arm, the midpoint 3 of the bridge arm is connected to one end of the line 44, the current commutation branches C, D are connected in series in the same direction to form a second bridge arm, and the midpoint 4 of the bridge arm is connected to the other end of the line 44, the two The bridge arms are paralleled in the same direction, and both bridge arms are connected in parallel with the aforementioned breaking current branch 29.
  • Each of the current commutation branches comprises a series connection of at least one high speed disconnector 6 and at least one bidirectional power semiconductor switch 10, wherein the bidirectional power semiconductor switch 10 of the current commutation branches A, D comprises a first current direction 14
  • the power semiconductor device 7 is connected in parallel with the power semiconductor device 8 of the second current direction 15, and the corresponding relationship between the current direction and the direction of the power semiconductor device is as shown in FIG.
  • the bidirectional power semiconductor switch 10 in the current commutation branches B, C comprises a parallel connection of the power semiconductor component 7 of the second current direction 15 and the power semiconductor component 8 of the first current direction 14 , the direction of the current and the direction of the power semiconductor component
  • FIG. 3 wherein the power semiconductor device 8 has an on-off capability.
  • the current commutation branches A, B, C, D may additionally be provided with at least one bidirectional power semiconductor switch 10, and the bidirectional power semiconductor in the current commutating branch, B, C, D
  • the switches 10 are connected in parallel in the same direction.
  • the current commutating branches have a smaller on-resistance than the breaking current branch 29, and the term "on-resistance" refers to the resistance of the current flowing through the turned-on power semiconductor device, in other words
  • the current commutation branch has a lower conduction voltage drop than the break current branch 29.
  • the breaking current branch 29 in the device 20 has a higher voltage blocking capability than the current commutating branch, and the breaking current branch 29 has the ability to break the current in one direction of the line, since the current will be broken after the current is broken.
  • a high breaking voltage is generated between the two ends of the breaking current branch 29, that is, between the node 1 and the node 2.
  • the breaking current branch 29 includes many The series connection of the power semiconductor devices 5, while operating at the same time, withstands the breaking voltage on average, so that the breaking current branch 29 has a higher voltage blocking capability than the current commutating branch.
  • each of the current commutation branches, B, C, and D has two modes of operation, including a normal mode and a break mode.
  • a normal mode that is, when the system is in normal operation, the device 20 flows through the normal line current, and at this time, the power semiconductor device 8 of the current commutating branches A, B, C, D can be controlled to be in a conducting state, and the normal line current flows.
  • the power semiconductor device 8 in the current switching branches A, B, C, D can be selectively turned off according to the current direction of the line 44, and the bidirectional power semiconductor switch 10 is turned by turning off the power semiconductor device 8.
  • a power semiconductor device having only one-direction conduction capability has a single-conducting characteristic of the power semiconductor device, so that the bidirectional current in the line flows through the breaking current branch 29 in the same direction, so that the breaking current branch 29 can be
  • the power semiconductor device 5 has only one arrangement direction, reducing the number of power semiconductor devices by half.
  • the main function of the high speed disconnector 6 is to isolate the voltage.
  • breaking current branch 29 After the breaking current branch 29 is disconnected, a high breaking voltage is generated between the node 1 and the node 2, and the voltage is applied to the current commutating branch, and the high-speed isolating switch 6 can withstand a high breaking voltage, which can make the current
  • the power semiconductor device in the commutation branch can withstand a small breaking voltage.
  • the current commutating branch can bypass the breaking current branch 29 during normal operation to reduce the running loss of the device 20, and when the current needs to be turned off, the current can be reversed, in one direction.
  • the current is transferred to the breaking current branch 29, which only needs to control the turn-on and turn-off of the power semiconductor device 8 without additional hardware cost.
  • the present invention also discloses a control method for breaking current using the aforementioned device 20, the device 20 being connected in series to the current path of the line 44, the solid state DC breaker 9 in the breaking current branch 29 being closed, the current commutation branch
  • the high speed isolating switch 6 and the bidirectional power semiconductor switch 10 in the roads, B, C, D are closed, and the control method comprises the following steps:
  • the high-speed isolating switch 6 of the current commutating branches B and C is simultaneously disconnected.
  • the first current direction is 14, as shown in FIG. 2, the current commutating branches B and C are subjected to the breaking current branch 29
  • the high breaking voltage generated by the breaking therefore, Before the breaking current branch 29 is disconnected, the high-speed isolating switch 6 of the current switching branches B and C must be separated to prevent the power semiconductor device of the above-mentioned branch from being damaged by the high breaking voltage; and the current commutating branch, D It is connected in series with the breaking current branch 29, and has a breaking current flowing, but does not withstand a high breaking voltage, and should be kept closed.
  • the high-speed isolating switch 6 in the split current-carrying branch A and D completes the entire breaking process.
  • the current commutating branch and the high-speed isolating switch 6 in D are simultaneously disconnected.
  • the breaking current branch 29 The high breaking voltage generated by the breaking, therefore, the high-speed isolating switch 6 in the current switching branches A, D must be separated before the breaking current branch 29 is disconnected, so as to prevent the power semiconductor device of the branch from being subjected to a high breaking voltage.
  • the current commutating branches B, C and the breaking current branch 29 are connected in series, and a breaking current flows, but does not withstand a high breaking voltage, and should be kept closed.
  • a split-current commutating branch B, C high-speed isolating switch 6, complete the entire breaking process.
  • the present invention also provides a control method for limiting the current of line 44 using the aforementioned apparatus 20: the apparatus 20 is connected in series to the current path of line 44, the solid state DC breaker 9 in the breaking current branch 29 is closed, current commutation The high speed disconnector 6 and the bidirectional power semiconductor switch 10 in the branches A, B, C, D are closed, the method comprising the steps of:
  • the above specific number is determined by the current current value and the current limit target value.
  • the design device 20 is capable of limiting or breaking the bidirectional current of the ⁇ 200 kV HVDC transmission line 44 with a current breaking capability of 2 kA and a current limiting capability.
  • the device 20 includes a breaking current branch 29 and a current commutating branch, B, C, D, wherein the breaking current branch 29 includes a parallel connection of two sets of DC solid-state circuit breakers 9 and a non-linear resistor 13
  • the DC solid-state circuit breaker 9 includes at least one power semiconductor device 5 in one direction.
  • the breaking current branch 29 should be able to withstand at least a breaking voltage of 400 kV, considering a certain margin, according to the 600 kV design, two IGBTs of 4. 5 kV/l. 6 kA are connected in parallel as a unit device, considering There may be uneven voltage at the moment of turn-off. There is a certain margin for the withstand voltage design of the device. A total of 200 unit devices are required in series, and a total of two groups are included. Each group of DC solid-state circuit breakers 9 is connected in series with 100 unit devices. All IGBTs are arranged in the same direction.
  • the device 20 further includes current commutation branches A, B, C, D, wherein the current commutation branches A, B constitute a first bridge arm, and the midpoint 3 of the bridge arm is connected to one end of the line 44, and the current commutation branch ( :, D constitutes a second bridge arm, the midpoint 4 of the bridge arm is connected to the other end of the line 44, and both bridge arms are connected in parallel with the breaking current branch 29 .
  • a total of four current commutation branches are required for device 20, with the same device for each branch.
  • Each branch includes at least one bidirectional power semiconductor switch 10 and a high speed isolating switch 6.
  • the high speed isolating switch 6 is required to withstand a breaking voltage of 600 kV and is fast.
  • the bidirectional power semiconductor switch 10 is composed of an IGBT unit with an anti-parallel diode, and the bidirectional power semiconductor switch 10 is subjected to a small breaking voltage, and an IGBT unit having an anti-parallel diode of 4. 5 kV/1. 6 kA is selected.
  • the bidirectional power semiconductor switch 10 requires a total of three bidirectional power semiconductor switches 10, and the arrangement direction of the devices is as shown in FIGS. 2 and 3.

Abstract

一种限制线路电流或使电流分断的装置及其控制方法,所述装置包括分断电流支路(29)和桥式支路,桥式支路包括由4条完全相同的电流换向支路构成的两条桥臂,4条电流换向支路两两同向串联,形成的两条桥臂再进行并联,两条桥臂均与分断电流支路并联,且两条桥臂的中点分别连接线路两端,各电流换向支路均包括相互串联的至少一个高速隔离开关(6)和至少一个双向功率半导体开关(10)。该装置能够断开双向电流。

Description

限制线路电流或使电流分断的装置及其控制方法
技术领域
本发明涉及一种限制线路电流或使线路电流分断的装置, 以及一种控制该装置的方 法。 背景技术
在多端直流输电系统中, 高压直流断路器是至关重要的设备之一。 多端高压直流输 电系统由于电压等级高、 线路阻抗小, 一旦发生线路短路故障, 将很快影响到直流输电 网络和交流网络, 必须迅速切除故障。 因此, 高压直流断路器需要动作速度快, 能够最 大限度地减小故障持续时间或抑制故障电流, 减小故障对交 /直流输电网络的冲击。 由于 高压直流断路器串联于输电线路, 输电线路中潮流方向不确定, 电流可能存在两个方向, 因此要求断路器能够分断两个方向的直流电流。
中国专利申请 CN 102780200 A采用传统高压直流断路器分断直流电流, 传统高压直 流断路器结构由 3部分构成: 交流断路器、 LC振荡回路和耗能元件。 交流断路器分开后 产生电弧, 电弧电压与 LC振荡回路发生谐振, 当振荡电流峰值达到直流电流幅值时可完 全抵消直流电流, 使断路器端口出现过零点, 促使电弧熄灭, 实现关断直流电流的目的。 这种分断方式不包括功率半导体器件, 没有方向性, 因此, 可以分断两个方向的电流, 且正常工作时损耗很小。 但是, 传统高压直流断路器灭弧时间较长, 约几十毫秒, 无法 满足快速隔离多端直流输电系统故障的需求。
为满足快速隔离直流故障电流并且保持较高的输电效率, 中国专利申请 CN 102687221A公开了一种使输电线路或配电线路的电流短路的装置和方法以及限流布置, 包括主断路器、 高速开关、 辅助断路器和非线性电阻耗能元件。 正常工作模式下, 线路 电流流过辅助回路, 通态损耗小; 故障模式下, 电流换至主断路器, 最终由耗能元件吸 收分断能力。
高压直流断路装置关断故障电流后主断路器承受数百 kV电压,仅在一个电流方向上 功率半导体器件串联数目就已达到数百只。 由于功率半导体器件只能单方向导通, 为了 实现在两个电流方向上都能够关断故障电流, 该高压直流断路装置中的主断路器基本串 联单元采用了两个功率半导体器件反串联或反并联结构, 主断路器的功率半导体器件数 量增加了一倍, 在第一电流方向分断时, 第二电流方向的功率半导体器件对分断电流或 承受电压没有有益作用, 相当于主断路器功率半导体器件的利用率只有 50 %。 由于功率 半导体器件的成本在该装置总成本中占有很大的比例, 因此为了实现双向电流的分断功 能, 大大增加了装置的成本。 主断路器中第二电流方向的功率半导体器件的增加不但不 会产生有益作用, 第二电流方向的功率半导体器件反而会受到在第一电流方向关断时产 生的过压和过流的不利影响。 如果第二电流方向的功率半导体器件与第一电流方向的功 率半导体器件采用反向并联的方式连接, 在第一电流方向关断时的过电压将施加在第二 电流方向的功率半导体器件上, 该电压对于第二电流方向的功率半导体器件来说是反向 电压, 会对器件造成损伤; 如果采用第二电流方向的带反并联二极管的功率半导体器件 与第一电流方向的带反并联二极管的功率半导体器件采用反向串联的方式连接, 在第一 电流方向关断过程中产生的很高的突变电流将流过第二电流方向的功率半导体器件中的 续流二极管, 会对器件的寿命造成不利影响。
增加的第二电流方向的功率半导体器件也会对主断路器的结构设计及电气设计造成 不利的影响, 第一电流方向的功率半导体器件的布置方向是一致的, 使得电气设计及结 构设计具有一致性。 第二电流方向的功率半导体器件的增加破坏了原有布置方向的一致 性, 导致对器件布局、 安装及布线的难度增加。
中国专利申请 CN 102687221A的辅助断路器支路中的超高速机械开关与主断路器是 并联关系, 超高速机械开关无法完全隔断设备, 保护主断路器, 主断路器没有明显断点, 不利于检修和维护。 发明内容
本发明的目的, 在于提供一种限制线路电流或使电流分断的装置及其控制方法, 其 能够适应线路的双向电流, 在保证足够快地分断速度和低损耗的前提下, 大大降低装置 的成本, 减小装置器件布局、 安装及布线的难度。
为了达成上述目的, 本发明采用的解决方案是:
一种限制线路电流或使电流分断的装置, 包括分断电流支路, 所述分断电流支路包 括一个分断单元或至少两个分断单元的串联连接, 所述各分断单元均包括一个固态直流 断路器和一个非线性电阻的并联连接;
还包括桥式支路, 所述桥式支路包括由 4条完全相同的电流换向支路所构成的两条 桥臂, 所述 4条电流换向支路两两同向串联, 所形成的两条桥臂再进行并联, 两桥臂均 与所述分断电流支路并联连接, 且两桥臂的桥臂中点分别连接线路的两端; 所述各电流 换向支路均包括相互串联的至少一个高速隔离开关和至少一个双向功率半导体开关; 定 义电流由第一桥臂的桥臂中点进入, 依次流经第一桥臂中第一电流换向支路、 分断电流 支路、 第二桥臂中第四电流换向支路的方向为第一电流方向, 定义电流由第二桥臂的桥 臂中点进入, 依次流经第二桥臂中第三电流换向支路、 分断电流支路、 第一桥臂中第二 电流换向支路的方向为第二电流方向, 所述固态直流断路器的布置方向与第一、 二电流 方向相同。
上述双向功率半导体开关由两个功率半导体器件反向并联而成, 第二功率半导体器 件具有开通关断能力; 所述第一电流换向支路中第一功率半导体器件、 第二电流换向支 路中第二功率半导体器件、 第三电流换向支路中第二功率半导体器件及第四电流换向支 路中第一功率半导体器件与第一电流方向相同, 所述第一电流换向支路中第二功率半导 体器件、 第二电流换向支路中第一功率半导体器件、 第三电流换向支路中第一功率半导 体器件及第四电流换向支路中第二功率半导体器件与第二电流方向相同。
上述各电流换向支路还包括至少一个第二双向功率半导体开关, 所述第二双向功率 半导体开关与双向功率半导体开关的结构相同, 并与其同向并联连接。
上述第一功率半导体器件不具有开通关断能力。
上述固态直流断路器由至少一个功率半导体器件同向串联而成。
一种使用前述装置使电流分断的控制方法, 所述装置串联连接到线路的电流通路, 所述分断电流支路中的固态直流断路器闭合, 电流换向支路中的高速隔离开关和双向功 率半导体开关闭合, 所述控制方法包括下列步骤:
如果接收到断开线路电流指令信号, 判断线路电流方向:
如果为第一电流方向, 按照如下操作顺序:
一同时关断第二、三电流换向支路中的双向功率半导体开关的第二功率半导体器件, 由此将电流变换到分断电流支路;
一此后, 同时断开电第二、 三电流换向支路的高速隔离开关;
一此后, 同时断开分断电流支路中的固态直流断路器, 由此将电流变换到分断电流 支路中的非线性电阻;
一分断第一、 四电流换向支路中的高速隔离开关, 完成整个分断过程;
如果为第二电流方向, 按照如下操作顺序:
一同时关断第一、四电流换向支路中的双向功率半导体开关的第二功率半导体器件, 由此将电流变换到分断电流支路; 一此后, 同时断开第一、 四电流换向支路中的高速隔离开关;
一此后, 同时断开分断电流支路中的固态直流断路器, 由此将电流变换到分断电流 支路中的非线性电阻; ,
一分断第二、 三电流换向支路中的高速隔离开关, 完成整个分断过程。
一种使用前述装置限制线路电流的控制方法:所述装置串联连接到线路的电流通路, 所述分断电流支路中的固态直流断路器闭合, 电流换向支路中的高速隔离开关和双向功 率半导体开关闭合, 所述方法包括下列步骤:
如果接收到限制线路电流指令信号, 判断线路电流方向:
如果为第一电流方向, 按照如下操作顺序:
一同时关断第二、三电流换向支路中的双向功率半导体开关的第二功率半导体器件, 由此将电流变换到分断电流支路;
一此后, 同时断开第二、 三电流换向支路中的高速隔离开关;
一此后, 断开分断电流支路中的至少一个固态直流断路器, 由此将电流变换到分断 电流支路中的至少一个非线性电阻;
如果为第二电流方向, 按照如下操作顺序:
一同时关断第一、四电流换向支路中的双向功率半导体开关的第二功率半导体器件, 由此将电流变换到分断电流支路;
一此后, 同时断开第一、 四电流换向支路中的高速隔离开关;
一此后, 断开分断电流支路中的至少一个固态直流断路器, 由此将电流变换到分断 电流支路中的至少一个非线性电阻, 由此达到限制线路电流的目的。
采用上述方案后, 本发明的优点体现在以下几个方面:
一通态损耗低: 在线路正常工作时, 电流换向支路可以将分断电流支路旁路, 线路 电流流过由几乎零阻抗的高速隔离开关与导通压降很小的少量功率半导体器件组成的电 流换向支路。 分断电流支路由于需要更高的导通压降, 几乎没有电流流过, 装置的总损 耗很低。
一与传统高压直流断路器相比分断速度较快, 采用功率半导体器件作为分断电流执 行单元, 速度很快, 通常功率半导体器件的分断速度仅需几十微秒, 可以忽略不计, 装 置的总分断时间主要在于高速隔离开关的分断时间, 目前, 高速隔离开关的分断速度可 达 1一 3ms, 可以预测, 装置的总分断时间在 3— 5ms左右, 比传统高压直流断路器的分断 速度快的多。 一仅较小的成本实现双向电流的分断: 本发明中的分断电流支路由同一个电流方向 的功率开关器件串联组成, 通过电流换向支路使得线路中的双向电流流过分断电流支路 为同一方向。 当线路电流为第一电流方向时, 电流换向支路(A,D) 中的功率半导体器件 ( 7 ) 与第一电流方向一致, 关断电流换向支路 (B,C) 中的功率半导体器件 (8 ) , 使电 流换向支路 (A,D) 中的功率半导体器件 (7 )与第一电流方向相反, 处于反向截止状态, 使流过分断电流支路的方向为从节点 (1 ) 到节点 (2 ) 。 当线路电流为第二电流方向时, 电流换向支路 (B,C) 与第二电流方向一致, 关断电流换向支路 (A,D ) 中的功率半导体 器件 (8 ) , 使电流换向支路 (A,D) 中的功率半导体器件 (7 ) 与第二电流方向相反, 处 于反向截止状态, 使流过分断电流支路的方向为从节点 (1 ) 到节点 (2 ) 。 由此可见, 当线路电流方向不同时, 流过分断电流支路的电流方向是一致的。 电流换向支路一共包 括少量的功率半导体器件和四组高速隔离开关, 功率半导体器件数量很少, 成本很低, 高速隔离开关只是无电流状态下分开, 无需灭弧, 仅起到隔断电压的作用, 成本较低。 总体成本与中国专利申请 CN 102687221A相比成本大大减小, 提高了装置中的功率半导 体器件的利用效率, 同时避免了中国专利申请 CN 102687221A实现双向功能的缺陷。
一较好的隔离与检修功能: 本发明中电流换向支路中的高速隔离开关在电流分断后 分开, 使装置中的所有功率半导体器件完全被隔离, 安全可靠, 利于检修和维护, 无需 再为装置配置额外的隔离刀闸, 节省成本。 附图说明
图 1是本发明装置的连接示意图;
图 2是第一电流方向与功率半导体器件的方向对应关系图;
图 3是第二电流方向与功率半导体器件的方向对应关系图;
图 4是电流换向支路正常模式图。 具体实施方式
如图 1所示,本发明一种限制线路 44电流或使电流分断的装置 20,包括分断电流支 路 29和桥式支路, 下面分别进行说明。
所述分断电流支路 29包括至少一个分断单元的串联连接, 两端分别是节点 1、 2, 所 述各分断单元均包含有一个固态直流断路器 9和一个非线性电阻 13的并联连接,且所述 固态直流断路器 9由至少一个功率半导体器件 5同向串联而成, 且固态直流断路器 9的 布置方向与从节点 1流向节点 2的电流方向一致。
桥式支路包括由 4条完全相同的电流换向支路 A、 B、 C, D所构成的两条桥臂, 具体 连接关系是: 电流换向支路 A、 B同向串联, 构成第一桥臂, 桥臂中点 3与线路 44的一 端连接, 电流换向支路 C、 D同向串联, 构成第二桥臂, 桥臂中点 4与线路 44的另一端 连接, 所述两条桥臂再进行同向并联, 且两条桥臂均与前述分断电流支路 29并联连接。
各电流换向支路均包括至少一个高速隔离开关 6和至少一个双向功率半导体开关 10 的串联连接, 其中, 电流换向支路 A、 D中的双向功率半导体开关 10包括第一电流方向 14的功率半导体器件 7与第二电流方向 15的功率半导体器件 8组成的并联连接,电流方 向与功率半导体器件方向的对应关系如图 2所示, 其中所述功率半导体器件 8具有开通 关断能力; 所述电流换向支路 B、 C中的双向功率半导体开关 10包括第二电流方向 15的 功率半导体器件 7与第一电流方向 14的功率半导体器件 8组成的并联连接, 电流方向与 功率半导体器件方向的对应关系如图 3所示, 其中所述功率半导体器件 8具有开通关断 能力。
在实际操作中, 所述电流换向支路 A、 B、 C, D还可另外设置至少一个双向功率半导 体开关 10, 其与前述电流换向支路 、 B、 C, D中的双向功率半导体开关 10同方向并联 连接。 通过设置多路同向并联的结构, 可提高装置 20承受电流的能力。
所述各电流换向支路与所述分断电流支路 29相比具有更小的导通电阻, 术语 "导通 电阻"指的是流经被接通的功率半导体器件的电流的电阻, 换言之电流换向支路比分断 电流支路 29具有更低的导通压降。
所述装置 20中的分断电流支路 29与所述电流换向支路相比具有更高的电压阻塞能 力, 分断电流支路 29具备能够分断线路单方向电流的能力, 由于在电流分断后会在分断 电流支路 29两端, 即节点 1与节点 2之间产生很高的分断电压, 在高压直流输电系统中 应用, 能够产生几百千伏的高电压, 因此分断电流支路 29包括很多个功率半导体器件 5 的串联连接, 同时动作, 平均承受分断电压, 因此, 分断电流支路 29与所述电流换向支 路相比具有更高的电压阻塞能力。
在本发明中, 各电流换向支路 、 B、 C, D均存在两种工作模式, 包括正常模式和分 断模式。 正常模式下, 即在系统正常运行时, 装置 20流过正常线路电流, 此时可控制电 流换向支路 A、 B、 C, D的功率半导体器件 8处于导通状态, 正常线路电流流过电流换向 支路 A、 B、 C, Do 如图 4所示, 正常线路电流流经电流换向支路 A、 C和电流换向支路8、 D, 由于电流换向支路 A、 B、 C, D比分断电流支路 29具有更低的导通压降, 分断电流支 路 29被旁路, 几乎没有电流流过, 电流换向支路 A、 C和电流换向支路8、 D平均承担线 路电流, 且双向电流均可以流通, 当线路电流为第一电流方向 14时, 一部分电流流经电 流换向支路 A的功率半导体器件 7和电流换向支路 C的功率半导体器件 8,另一部分电流 流经电流换向支路 B的功率半导体器件 8和电流换向支路 D的功率半导体器件 7;当线路 电流为第二电流方向 15时,一部分电流流经电流换向支路 A的功率半导体器件 8和电流 换向支路 C的功率半导体器件 7,另一部分电流流经电流换向支路 B的功率半导体器件 7 和电流换向支路 D的功率半导体器件 8; 由于电流换向支路仅需要很少的器件实现,导通 电阻很小, 故装置 20串入线路 44产生的额外的损耗很小。
在分断模式下, 可根据线路 44电流方向, 选择性关断电流换向支路 A、 B、 C、 D中 的功率半导体器件 8, 通过关断功率半导体器件 8使双向功率半导体开关 10变成只有单 方向导通能力的功率半导体器件, 利用功率半导体器件具有单向导通的特性, 使线路中 的双向电流流过分断电流支路 29为同一方向, 这样就可以使分断电流支路 29中的功率 半导体器件 5仅具有一个布置方向, 将功率半导体器件数量减小一半。 高速隔离开关 6 的主要作用是隔断电压。在分断电流支路 29分断后, 会在节点 1和节点 2之间产生很高 的分断电压, 该电压施加到电流换向支路, 高速隔离开关 6可承受很高的分断电压, 可 以使电流换向支路中的功率半导体器件承受很小的分断电压即可。
总体来说, 电流换向支路正常运行时可以将分断电流支路 29旁路, 以减小装置 20 运行损耗, 在需要关断电流时, 又能起到电流换向作用, 将一个方向的电流转移到分断 电流支路 29, 该切换仅需要控制功率半导体器件 8的开通和关断完成, 不需要额外增加 硬件成本。
本发明还公开一种使用前述装置 20使电流分断的控制方法, 所述装置 20串联连接 到线路 44的电流通路, 所述分断电流支路 29中的固态直流断路器 9闭合, 电流换向支 路 、 B、 C, D中的高速隔离开关 6和双向功率半导体开关 10闭合, 所述控制方法包括 下列步骤:
如果接收到断开线路 44电流指令信号, 判断线路 44电流方向:
如果为第一电流方向 14, 按照如下操作顺序:
一同时关断电流换向支路 B、 C中的双向功率半导体开关 10的功率半导体器件 8, 由 此将电流变换到分断电流支路 29,
一此后, 同时断开电流换向支路 B、 C的高速隔离开关 6, 当为第一电流方向 14时, 如图 2所示, 电流换向支路 B、 C会承受分断电流支路 29分断产生的高分断电压, 因此, 在分断电流支路 29分断之前, 务必将电流换向支路 B、 C的高速隔离开关 6分开, 以防 止上述支路的功率半导体器件承受高分断电压而损坏; 而电流换向支路 、 D与分断电流 支路 29是串联连接关系, 有分断电流流过, 但不会承受高分断电压, 应保持闭合状态。
一此后, 同时断开分断电流支路 29中的固态直流断路器 9, 由此将电流变换到分断 电流支路 29中的非线性电阻 13;
一分断电流换向支路 A、 D中的高速隔离开关 6, 完成整个分断过程。
如果为第二电流方向 15, 按照如下操作顺序:
一同时关断电流换向支路 A、 D中的双向功率半导体开关 10的功率半导体器件 8, 由 此将电流变换到分断电流支路 29;
一此后, 同时断开电流换向支路 、 D 中的高速隔离开关 6, 当为第二电流方向 15 时, 如图 3所示, 电流换向支路 A、 D会承受分断电流支路 29分断产生的高分断电压, 因此, 在分断电流支路 29分断之前, 务必将电流换向支路 A、 D中的高速隔离开关 6分 开, 以防止上述支路的功率半导体器件承受高分断电压而损坏; 而电流换向支路 B、 C与 分断电流支路 29是串联连接关系, 有分断电流流过, 但不会承受高分断电压, 应保持闭 合状态。
一此后, 同时断开分断电流支路 29中的固态直流断路器 9, 由此将电流变换到分断 电流支路 29中的非线性电阻 13;
一分断电流换向支路 B、 C中的高速隔离开关 6, 完成整个分断过程。
本发明还提供一种使用前述装置 20限制线路 44电流的控制方法:所述装置 20串联 连接到线路 44的电流通路, 所述分断电流支路 29中的固态直流断路器 9闭合, 电流换 向支路 A、 B、 C, D中的高速隔离开关 6和双向功率半导体开关 10闭合, 所述方法包括 下列步骤:
如果接收到限制线路 44电流指令信号, 判断线路 44电流方向:
如果为第一电流方向 14, 按照如下操作顺序:
一同时关断电流换向支路 B、 C中的双向功率半导体开关 10的功率半导体器件 8, 由 此将电流变换到分断电流支路 29;
一此后, 同时断开电流换向支路 B、 C中的高速隔离开关 6;
一此后, 断开分断电流支路 29中的特定数量的至少一个固态直流断路器 9, 由此将 电流变换到分断电流支路 29中的特定数量的至少一个非线性电阻 13;
如果为第二电流方向 15, 按照如下操作顺序: 一同时关断电流换向支路 A、 D中的双向功率半导体开关 10的功率半导体器件 8, 由 此将电流变换到分断电流支路 29;
一此后, 同时断开电流换向支路 A、 D中的高速隔离开关 6;
一此后, 断开分断电流支路 29中的特定数量的至少一个固态直流断路器 9, 由此将 电流变换到分断电流支路 29中的特定数量的至少一个非线性电阻 13,由此达到限制线路 44电流的目的。
上述特定数量由当前电流值与限流目标值决定。
以一个实施例说明本发明装置的具体实现方式:
设计装置 20能够限制或分断 ± 200kV高压直流输电线路 44的双向电流,电流分断能 力为 2kA, 具有限制电流能力。
如图 1所示, 装置 20包括分断电流支路 29及电流换向支路 、 B、 C, D, 其中分断 电流支路 29包括两组直流固态断路器 9和非线性电阻 13的并联连接, 其中直流固态断 路器 9在一个方向上至少包括一个功率半导体器件 5。对于本实施例,其中分断电流支路 29应至少能够承受 400kV的分断电压, 考虑一定裕量, 按照分断 600kV设计, 选择两个 4. 5kV/l. 6kA的 IGBT并联作为一个单元器件, 考虑在关断时刻可能出现的电压不均, 对 器件的耐压设计要留有一定裕量, 共需要 200个单元器件串联, 一共包括两组, 每组直 流固态断路器 9为 100个单元器件串联, 所有 IGBT布置方向一致。
装置 20还包括电流换向支路 A、 B、 C, D, 其中电流换向支路 A、 B构成第一桥臂, 桥臂中点 3与线路 44的一端连接, 电流换向支路 (:、 D构成第二桥臂, 桥臂中点 4与线 路 44的另一端连接, 两桥臂均与分断电流支路 29并联连接。
装置 20共需要 4个电流换向支路, 每个支路的器件相同。每个支路包括至少一个双 向功率半导体开关 10和高速隔离开关 6, 高速隔离开关 6要求能够承受 600kV的分断电 压, 动作快速。
双向功率半导体开关 10由一个带有反并联二极管的 IGBT单元组成, 双向功率半导 体开关 10承受很小的分断电压即可, 选择带有反并联二极管的 4. 5kV/1. 6kA 的 IGBT单 元组成一个双向功率半导体开关 10,共需要 3个双向功率半导体开关 10组成,器件的布 置方向如图 2和图 3所示。
以上实施例仅用以说明本发明的技术方案而非对其限制, 尽管本领域的技术人员阅 读本申请后, 参照上述实施例本本发明进行种种修改或变更, 但这些修改或变更均在申 请待批本发明的权利申请要求保护范围之内。

Claims

权利要求书
1、 一种限制线路电流或使电流分断的装置, 包括分断电流支路, 所述分断电流支路 包括一个分断单元或至少两个分断单元的串联连接, 所述各分断单元均包括一个固态直 流断路器和一个非线性电阻的并联连接; 其特征在于:
还包括桥式支路, 所述桥式支路包括由 4 条完全相同的电流换向支路所构成的两条 桥臂, 所述 4 条电流换向支路两两同向串联, 所形成的两条桥臂再进行并联, 两桥臂均 与所述分断电流支路并联连接, 且两桥臂的桥臂中点分别连接线路的两端; 所述各电流 换向支路均包括相互串联的至少一个高速隔离开关和至少一个双向功率半导体开关; 定 义电流由第一桥臂的桥臂中点进入, 依次流经第一桥臂中第一电流换向支路、 分断电流 支路、 第二桥臂中第四电流换向支路的方向为第一电流方向, 定义电流由第二桥臂的桥 臂中点进入, 依次流经第二桥臂中第三电流换向支路、 分断电流支路、 第一桥臂中第二 电流换向支路的方向为第二电流方向, 所述固态直流断路器的布置方向与第一、 二电流 方向相同。
2、 如权利要求 1 所述的限制线路电流或使电流分断的装置, 其特征在于: 所述双向 功率半导体开关由两个功率半导体器件反向并联而成, 第二功率半导体器件具有开通关 断能力; 所述第一电流换向支路中第一功率半导体器件、 第二电流换向支路中第二功率 半导体器件、 第三电流换向支路中第二功率半导体器件及第四电流换向支路中第一功率 半导体器件与第一电流方向相同, 所述第一电流换向支路中第二功率半导体器件、 第二 电流换向支路中第一功率半导体器件、 第三电流换向支路中第一功率半导体器件及第四 电流换向支路中第二功率半导体器件与第二电流方向相同。
3、 如权利要求 2 所述的限制线路电流或使电流分断的装置, 其特征在于: 所述各电 流换向支路还包括至少一个第二双向功率半导体开关, 所述第二双向功率半导体开关与 双向功率半导体开关的结构相同, 并与其同向并联连接。
4、 如权利要求 2 所述的限制线路电流或使电流分断的装置, 其特征在于: 所述第一 功率半导体器件不具有开通关断能力。
5、 如权利要求 1或 2所述的限制线路电流或使电流分断的装置, 其特征在于: 所述 固态直流断路器由至少一个功率半导体器件同向串联而成。
6、 一种使用如权利要求 2 所述的装置使电流分断的控制方法, 所述装置串联连接到 线路的电流通路; 其特征在于: 所述分断电流支路中的固态直流断路器闭合, 电流换向 支路中的高速隔离开关和双向功率半导体开关闭合, 所述控制方法包括下列步骤: 如果接收到断开线路电流指令信号, 判断线路电流方向:
如果为第一电流方向, 按照如下操作顺序:
一同时关断第二、 三电流换向支路中的双向功率半导体开关的第二功率半导体器 件, 由此将电流变换到分断电流支路;
一此后, 同时断开第二、 三电流换向支路的高速隔离开关;
一此后, 同时断开分断电流支路中的固态直流断路器, 由此将电流变换到分断电流 支路中的非线性电阻;
一分断第一、 四电流换向支路中的高速隔离开关, 完成整个分断过程;
如果为第二电流方向, 按照如下操作顺序:
一同时关断第一、 四电流换向支路中的双向功率半导体开关的第二功率半导体器 件, 由此将电流变换到分断电流支路;
一此后, 同时断开第一、 四电流换向支路中的高速隔离开关;
一此后, 同时断开分断电流支路中的固态直流断路器, 由此将电流变换到分断电流 支路中的非线性电阻;
一分断第二、 三电流换向支路中的高速隔离开关, 完成整个分断过程。
7、 一种使用如权利要求 2 所述的装置限制线路电流的控制方法: 所述装置串联连接 到线路的电流通路; 其特征在于: 所述分断电流支路中的固态直流断路器闭合, 电流换 向支路中的高速隔离开关和双向功率半导体开关闭合, 所述方法包括下列步骤:
如果接收到限制线路电流指令信号, 判断线路电流方向:
如果为第一电流方向, 按照如下操作顺序:
一同时关断第二、 三电流换向支路中的双向功率半导体开关的第二功率半导体器 件, 由此将电流变换到分断电流支路;
一此后, 同时断开第二、 三电流换向支路中的高速隔离开关;
一此后, 断开分断电流支路中的至少一个固态直流断路器, 由此将电流变换到分断 电流支路中的至少一个非线性电阻;
如果为第二电流方向, 按照如下操作顺序:
一同时关断第一、 四电流换向支路中的双向功率半导体开关的第二功率半导体器 件, 由此将电流变换到分断电流支路;
一此后, 同时断开第一、 四电流换向支路中的高速隔离开关;
一此后, 断开分断电流支路中的至少一个固态直流断路器, 由此将电流变换到分断 电流支路中的至少一个非线性电阻, 由此达到限制线路电流的目的。
PCT/CN2013/090615 2013-01-31 2013-12-27 限制线路电流或使电流分断的装置及其控制方法 WO2014117614A1 (zh)

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US20150372473A1 (en) 2015-12-24
CN103972875A (zh) 2014-08-06
DK2953150T3 (da) 2017-11-13
RU2614807C2 (ru) 2017-03-29
US9362734B2 (en) 2016-06-07
AU2013376519A1 (en) 2015-08-06
NO2953150T3 (zh) 2018-02-17
BR112015018164B1 (pt) 2021-07-13
KR101720112B1 (ko) 2017-03-27
BR112015018164A8 (pt) 2019-11-05
AU2013376519B2 (en) 2015-11-12
PT2953150T (pt) 2017-11-15
RU2015130271A (ru) 2017-03-07
EP2953150A1 (en) 2015-12-09
EP2953150A4 (en) 2016-10-19
BR112015018164A2 (pt) 2017-08-22
ES2647156T3 (es) 2017-12-19
CN103972875B (zh) 2016-07-06
KR20150115854A (ko) 2015-10-14

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