WO2014109535A1 - Appareil à distance à haute vitesse destiné à déposer une couche atomique de plasma - Google Patents

Appareil à distance à haute vitesse destiné à déposer une couche atomique de plasma Download PDF

Info

Publication number
WO2014109535A1
WO2014109535A1 PCT/KR2014/000184 KR2014000184W WO2014109535A1 WO 2014109535 A1 WO2014109535 A1 WO 2014109535A1 KR 2014000184 W KR2014000184 W KR 2014000184W WO 2014109535 A1 WO2014109535 A1 WO 2014109535A1
Authority
WO
WIPO (PCT)
Prior art keywords
unit
gas
plasma
source gas
substrate
Prior art date
Application number
PCT/KR2014/000184
Other languages
English (en)
Korean (ko)
Inventor
전형탁
최학영
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Publication of WO2014109535A1 publication Critical patent/WO2014109535A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B9/00—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour
    • B05B9/03—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/002—Manually-actuated controlling means, e.g. push buttons, levers or triggers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B9/00—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour
    • B05B9/005—Spraying apparatus for discharge of liquids or other fluent material, without essentially mixing with gas or vapour the liquid or other fluent material being a fluid close to a change of phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45538—Plasma being used continuously during the ALD cycle
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Definitions

  • the present invention relates to a high-speed remote plasma atomic layer deposition apparatus, and more particularly, to a high-speed remote plasma atomic layer deposition apparatus capable of ensuring fast throughput since the atomic layer is deposited using a long-distance plasma formed in a spatial division method. will be.
  • a semiconductor device, a flat panel display device, and the like go through various manufacturing processes, and among them, a process of depositing a thin film required on a substrate such as a wafer or glass is inevitably performed.
  • sputtering chemical vapor deposition (CVD), atomic layer deposition (ALD) and the like are mainly used.
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • atomic layer deposition is a nanoscale thin film deposition technique using chemical adsorption and desorption of monoatomic layers. Each reactant is individually separated and supplied to the chamber in a pulsed form. It is a new concept of thin film deposition technology using chemical adsorption and desorption by surface saturation reaction.
  • the atomic layer deposition apparatus has a problem that the device is complicated because it requires a separate device in addition to the device for injecting the source gas, the reaction gas to adjust or control the pressure in the reaction chamber.
  • the conventional remote plasma atomic layer deposition technique using a remote plasma instead of a reaction gas is a time division method in which the source gas and the remote plasma are reacted to the substrate in order (time order) as time passes.
  • time order time passes.
  • the present invention provides a high speed remote plasma deposition apparatus capable of performing exhaust and intake of source gas in one unit.
  • the present invention provides a high-speed remote plasma deposition apparatus capable of reacting a source gas and a remote plasma to a substrate in a space division method.
  • the present invention provides a high speed remote plasma atomic layer deposition apparatus capable of ensuring fast throughput.
  • a high-speed remote plasma atomic layer deposition apparatus including: a source gas unit supplying a gas to a substrate; A plasma unit generating a plasma on the substrate; And a gas suction unit provided between the source gas unit and the plasma unit to suck the source gas, wherein the substrate has a length direction of at least one of the source gas unit, the plasma unit, or the gas suction unit. And relative movement in a direction intersecting with.
  • the plasma unit the plasma generating tube formed in the lower opening state; A plasma electrode provided on the plasma generating tube; A power grid formed at an open lower end of the plasma generation tube; And a shower head attached to a lower portion of the power grid.
  • a gas injection unit having a gas supply passage for supplying a plasma generation gas may be formed at an upper end of the plasma generation tube.
  • the lower end of the gas injection unit may be formed to be opened toward the power grid.
  • a plasma discharge part may be formed in the power grid and the shower head.
  • the plasma discharge portion may be formed in the form of a hole or a slit.
  • the plasma generation unit may be formed as a slit formed in a direction orthogonal to the movement direction of the substrate.
  • the plasma electrode may generate any one of a capacitive plasma, an inductive plasma, or a direct current pulse plasma.
  • the source gas unit and the plasma unit may be formed to be spatially divided.
  • the source gas unit may include a gas supply pipe in which a gas supply flow path is formed, and a gas exhaust pipe in which a pressure relaxation part communicating with the gas supply flow path is formed.
  • the internal volume of the pressure relief part may be larger than the internal volume of the gas supply passage.
  • the gas suction part may be integrally formed with the source gas unit, and the gas suction part may include a gas suction pipe surrounding at least a portion of an outer circumferential surface of the gas exhaust pipe so that a gas suction path is formed therein.
  • the bottom end of the gas intake pipe may extend longer downward than the bottom end of the gas exhaust pipe.
  • a vacuum exhaust unit may be formed at one side of the plasma unit to face the source gas unit or the gas suction unit.
  • a purge tube may be formed between the plasma unit and the vacuum exhaust unit.
  • the source gas unit, the plasma unit and the gas suction unit further comprises a chamber for forming a reaction space sealed therein to be located therein, the gas suction unit may be formed in the chamber.
  • the high-speed remote plasma atomic layer deposition apparatus can be expected to increase the productivity and can be applied to the display field because it is easy to enlarge.
  • the high-speed long-range plasma atomic layer deposition apparatus can easily control the basic pressure or the process pressure before the deposition revolution or during the process, and can control the process pressure by discharging the gas remaining after the deposition process to the outside of the chamber. Therefore, the configuration of the device can be prevented from becoming complicated.
  • the high-speed remote plasma atomic layer deposition apparatus sprays the source gas toward the substrate using a source gas unit having a pressure relief unit, so that the source gas can be evenly and uniformly sprayed, thereby increasing the deposition quality. have.
  • the high speed remote plasma atomic layer deposition apparatus can obtain fast throughput and increase yield because the atomic layer is deposited in a manner that spatially divides the supply of the source gas and the supply of the remote plasma.
  • FIG. 1 is a view schematically showing a high speed remote plasma atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view illustrating an interior of the atomic layer deposition apparatus of FIG. 1.
  • FIG. 3 is a perspective view illustrating a source gas unit used in the atomic layer deposition apparatus of FIG. 1, in which a gas suction unit is integrally formed with the source gas unit.
  • 4A and 4B are lateral and longitudinal cross-sectional views of the source gas unit according to FIG. 3.
  • 5A and 5B are a perspective view and a cross-sectional view of the plasma unit used in the atomic layer deposition apparatus according to FIG.
  • FIGS. 5A and 5B are cross-sectional views illustrating a plasma unit and a power unit connected thereto according to FIGS. 5A and 5B.
  • 7A to 7C are plan views illustrating electrode shapes of the plasma unit according to FIG. 5.
  • FIGS. 8 to 11 are schematic views showing modifications of the high speed remote plasma atomic layer deposition apparatus according to the present invention.
  • FIG. 1 is a view schematically showing a high-speed remote plasma atomic layer deposition apparatus according to an embodiment of the present invention
  • FIG. 2 is a cross-sectional view showing the inside of the atomic layer deposition apparatus according to FIG. 1
  • FIG. 6 is a cross-sectional view of the plasma unit and power supply connected thereto according to FIGS. 5A and 5B
  • FIG. 7A. 7C are a plan view showing the electrode form of the plasma unit according to FIG. 5, and FIGS. 8 to 11 are schematic views showing modifications of the high-speed remote plasma atomic layer deposition apparatus according to the present invention. to be
  • the high-speed remote plasma atomic layer deposition apparatus 100 may be provided to a source gas unit 130 and a substrate 110 that supply gas to the substrate 110.
  • a gas suction unit provided between the plasma unit 140 and the source gas unit 130 and the plasma unit 140 for generating a plasma to suck the source gas, and the substrate 110 includes a source gas unit 130,
  • the plasma unit 140 or the gas suction unit may be provided to move relative to the direction crossing the longitudinal direction of at least one.
  • the substrate 110 on which the atomic layer is deposited, the source gas unit 130, and the plasma unit 140 may move relative to each other.
  • the atomic layer may be deposited even when the size or length of the 110 is long, that is, a large substrate.
  • the atomic layer deposition apparatus 100 may create a condition for depositing an atomic layer if at least the source gas unit 130 and the plasma unit 140 are provided at least.
  • one source gas unit 130 is provided, two plasma units 140 are provided, and two vacuum exhaust units 150 are provided.
  • the number of the source gas unit 130, the plasma unit 140, and the vacuum exhaust unit 150 may be further enlarged.
  • at least one atomic layer deposition process may be performed in the form of the plasma unit 140, the source gas unit 130, and the plasma unit 140.
  • such an arrangement may include process requirements, yield, and throughput. It may be modified in various ways.
  • the fast remote plasma atomic layer deposition apparatus 100 may include a source gas unit 130 for supplying a source gas to the surface of the substrate 110.
  • the plasma unit 140 may be disposed on one side or both sides of the source gas unit 130 in the longitudinal direction.
  • the substrate 110 may move in the direction TD crossing the length direction of the source gas unit 130 or the plasma unit 140, or the source gas unit 130 or the plasma unit 140 may move.
  • the substrate 110 may be provided to relatively move in a direction TD crossing the length direction of at least one of the source gas unit 130 or the plasma unit 140. By configuring in this way, the throughput of the atomic layer deposition process can be improved.
  • the source gas is exhausted to deposit an atomic layer on the upper surface or the surface of the substrate 110. It may include at least one source gas unit 130 for suction.
  • exhaust means that the source gas is injected or blown to the surface of the substrate 110
  • intake means that the remaining source gas is suctioned (suction) from the surface of the substrate 110 without being involved in the reaction It means to discharge.
  • the substrate 110 is transferred while the source gas unit 130 or the plasma unit 140 is fixed, or the source gas unit 130 or the plasma unit 140 is transferred while the substrate 110 is fixed,
  • the substrate 110 and the source gas unit 130 or the plasma unit 140 may be transferred together.
  • the substrate 110 and the source gas unit 130 or the plasma unit 140 are transferred together, they move in opposite directions. Therefore, in either case, the substrate 110 and the source gas unit 130 or the plasma unit 140 move relative to each other.
  • Such a relative direction of movement TD is shown in FIGS. 1 and 2.
  • the substrate 110 may move relative to the source gas unit 130 or the plasma unit 140 in both directions, even when processing a large area substrate. No workspace is required.
  • the foot print can be shortened by shortening the relative movement distance of the substrate 110 with respect to the source gas unit 130 or the plasma unit 140, the large-area substrate can be easily processed. .
  • the substrate temperature variable part 120 may be provided below the substrate 110.
  • the substrate temperature variable part 120 may raise or lower the temperature of a portion of the substrate to which the first gas (source gas) is supplied.
  • the substrate temperature variable part 120 does not change the temperature of the entire substrate 110. Because it is variable, it can prevent thermal diffusion, reduced lifespan, and physical deformation, which may be a side problem due to temperature change.
  • the substrate temperature variable part 120 may have a form such as a heater or a cooling pad.
  • the source gas unit 130 or the plasma unit 140 of the atomic layer deposition apparatus 100 is preferably disposed at the same or a predetermined distance along the relative movement direction (TD). However, this separation may be adjusted in consideration of the time required for each reaction process step.
  • the bottom end of the source gas unit 130 or the plasma unit 140 preferably maintains a predetermined distance G from the surface of the substrate 110. More specifically, the lowermost end of the source gas unit 130 or the plasma unit 140 should maintain a predetermined distance G from the surface of the substrate 110. It is preferable that the said gap G does not exceed 20 mm. However, the distance G is not limited to 20 mm and may be determined in consideration of the overlap of the plasma.
  • the source gas unit 130 includes a gas supply pipe 131 having a gas supply passage 135 for supplying a source gas therein and a pressure relief unit 138 communicating with the gas supply passage 135 formed therein. It may include an exhaust pipe 134.
  • the gas suction part sucks and discharges source gas not involved in the reaction, and the source gas unit 130 and the gas suction part may be formed separately or may be integrally formed.
  • the atomic layer deposition apparatus 100 illustrated in FIGS. 1 to 4A and 4B is a case in which a gas suction unit is integrally formed in the source gas unit 130.
  • the gas suction unit is integrally formed with the source gas unit 130, and the gas suction unit 132 surrounds at least a portion of an outer circumferential surface of the gas exhaust pipe 134 so that the gas suction passage 139 is formed therein. It may include. That is, the gas suction part may be formed to surround the gas exhaust pipe 134 and may have a form of the gas suction pipe 132 integrally formed in the source gas unit 130.
  • the gas supply pipe 131 through which the source gas supplied from the external gas supply unit 160 passes is formed to protrude from the gas intake pipe 132 to the outside, and the gas exhaust pipe 134 is disposed inside the gas intake pipe 132. Can be formed. As shown in FIG. 1, the gas supply pipe 131 may be formed to be positioned inside the suction gas collecting unit 169.
  • the gas supply pipe 131 may be formed on the opposite side of the gas exhaust pipe 134 based on the gas intake pipe 132.
  • the cross-sectional size (diameter or area) of the gas supply pipe 131 is preferably smaller than the gas exhaust pipe 134 and the gas intake pipe 132.
  • the gas supply passage 135 may be formed in the gas supply pipe 131 so as to communicate in the longitudinal direction thereof.
  • At least one gas supply port 131a connected to the gas supply unit 160 may be formed at an uppermost end of the gas supply pipe 131.
  • the gas supply pipe 161 may communicate with the gas supply passage 135 through the gas supply port 131a.
  • both ends of the source gas unit 130 may be formed in a blocked state.
  • At least one gas supply nozzle 136 may be formed between the gas supply pipe 131 and the gas exhaust pipe 134 to communicate the gas supply passage 135 and the pressure relief 138.
  • the gas supply passage 135 and the pressure relief unit 138 may communicate with each other by the gas supply nozzle 136.
  • the gas supply passage 135, the gas supply nozzle 136, and the pressure relief unit 138 communicate with each other, but the gas intake passage 139 does not communicate with each other.
  • the gas supply passage 135, the gas supply nozzle 136, and the pressure releasing unit 138 are portions that are involved in the exhaust of the gas, and the gas intake passages 139 are portions that are involved in the intake of the gas, so that they do not communicate with each other. do.
  • the internal volume of the pressure relief unit 138 may be larger than the internal volume of the gas supply passage 135.
  • the pressure releasing unit 138 is a portion of a flow path through which the gas introduced through the gas supply passage 135 and the gas supply nozzle 136 flows, so that the gas passed through the narrow and small gas supply nozzle 136 can sufficiently remain. It is a part that has a relatively large volume.
  • the pressure of the gas is increased.
  • the pressure of the gas may be lowered while filling the pressure releasing unit 138 having a relatively large volume or space.
  • the gas whose pressure is reduced while filling the pressure releasing unit 138 is exhausted (injected) toward the substrate 110. In this process, the gas may be exhausted at an even pressure over the entire length of the source gas unit 130.
  • the pressure difference between the substrate 110 and the pressure releasing unit 138 is uniformly distributed over the entire length of the source gas unit 130. Gas can be injected.
  • the pressure releasing unit 138 is a part of the flow path formed to temporarily hold the gas having a high pressure to lower the pressure and to evenly inject the gas.
  • the pressure releasing unit 138 may have a form in which the cross-sectional structure is enlarged or enlarged, and the form is not limited to the shape of a jar as shown.
  • At least one gas exhaust port 132a connected to the vacuum pumping unit 170 may be formed in the gas intake pipe 132.
  • the gas exhaust port 132a is enclosed to be sealed by the suction gas collecting unit 169, and the suction gas collecting unit 169 may be connected to the vacuum pumping unit 170.
  • the gas exhaust port 132a formed in the gas intake pipe 132 is a port for discharging the source gas to the outside and may be connected to the vacuum pumping unit 170.
  • the gas passing through the gas exhaust port 132a may be discharged after filling the suction gas collecting unit 169 by leaving the source gas unit 130 by the vacuum pumping unit 170.
  • the gas exhaust port 132a may be directly connected to the vacuum pipe 172 without the suction gas collecting unit 169 being drawn out to take out the sucked gas.
  • FIG. 4B is a cross-sectional view along the cutting line "A-A" in FIG. 4A.
  • 4A is a longitudinal cross-sectional view of the source gas unit 130.
  • gas supply nozzles 136 are formed, only one gas supply nozzle 136 may be formed.
  • At least one gas exhaust unit 137 may be formed in the gas exhaust pipe 134 along its longitudinal direction.
  • the gas exhaust unit 137 is an outlet for discharging the gas filling the pressure relief unit 138 to the outside of the source gas unit 130.
  • the gas exhaust unit 137 has a form in communication with the outside and the pressure relief unit 138.
  • the gas intake passage 139 may be formed so that the space is partitioned by the gas supply nozzle 136. As shown in FIG. 4B, the gas intake passage 139 formed between the gas intake pipe 132 and the gas exhaust pipe 134 is divided into two spaces by the gas supply nozzle 136. At this time, the gas intake passage 139 is preferably partitioned symmetrically by the gas supply nozzle (136).
  • the gas exhaust pipe 134 may include an exhaust guide 137a extending to the gas exhaust part 137 toward the outside of the gas exhaust pipe 134. As shown in FIG. 4, the exhaust guide 137a extends downwardly in which the substrate 110 is positioned so that the gas passing through the gas exhaust unit 137 can contact the substrate 110 as much as possible. I can guide you.
  • the exhaust guide 137a may be formed on both sides of the exhaust guide 137a so as to be symmetrical with respect to an imaginary line passing through the center of the gas supply nozzle 136, so that the angle between the exhaust guides 137a formed on both sides becomes larger toward the bottom, The gas passing through the exhaust guide 137a may be guided to reach the substrate 110 while spreading.
  • the gas exhaust unit 137 may include at least one hole or slit formed between the exhaust guides 137a.
  • the gas exhaust part 137 is formed of a plurality of holes, according to the pressure magnitude or the difference according to the position in the gas exhaust flow path 138, it is preferable to increase the size of the hole or decrease the gap between the holes in the small pressure portion. desirable.
  • the gas exhaust portion 137 is formed of a single slit, it is preferable to increase the width of the slit in a portion having a small pressure depending on the pressure magnitude or the difference according to the position in the gas exhaust passage 139.
  • a gas intake unit 133 is formed between the circumferential end 133a of the gas intake pipe 132 and one end of the exhaust guide 137a, and the gas intake unit 133 is a gas exhaust pipe 134 or a gas intake pipe ( It may be located symmetrically with respect to the gas exhaust 137 along the circumferential direction of the 132.
  • the circumferential end 133a of the gas intake pipe 132 forming the gas intake unit 133 may have a shape bent toward the exhaust guide 137a.
  • the bottom end 133a of the gas intake pipe 132 may extend longer than the bottom end 137a of the gas exhaust pipe 134.
  • the bottom end 133a of the gas intake pipe 132 may extend further by a predetermined length t below the bottom end 137a of the gas exhaust pipe 134.
  • the protruding length t is preferably about 3 mm.
  • the lower end 133a of the gas intake pipe 132 extends longer than the lower end 137a of the gas exhaust pipe 134 so that the exhausted source gas can be sucked back before passing through the source gas unit 130. .
  • a vacuum exhaust unit 150 may be formed at one side of the plasma unit 140 to face the source gas unit 130 or the gas suction unit.
  • the vacuum exhaust unit 150 forms a vacuum on the surface of the substrate 110 and may be connected to the vacuum pumping unit 170 and the vacuum pipe 171.
  • the plasma unit 140 positioned between the source gas unit 130 and the vacuum exhaust unit 150 generates a long distance plasma and supplies it to the surface of the substrate 110.
  • the plasma unit 140 is formed at the lower end of the plasma generating tube 142, the plasma electrode 143 provided on the upper portion of the plasma generating tube 142, and the opening of the plasma generating tube 142. It may include a power grid 144 and a showerhead 145 attached to a lower portion of the power grid 144.
  • the high speed remote plasma atomic layer deposition apparatus 100 includes a plasma unit 140 having a form similar to that of the source gas unit 130, that is, a pipe or bar form. There is one feature to depositing an atomic layer by use.
  • the plasma unit 140 has a substantially rectangular cross section because the cross section of the plasma unit 140 is limited by the shape of the plasma electrode 143.
  • the plasma generating tube 142 has a substantially rectangular tube shape having a predetermined space filled with the plasma P therein, and the longitudinal direction thereof is perpendicular to the movement direction TD of the substrate 110.
  • a gas injection unit 141 having a gas supply passage 141a therein may be formed at an upper end of the plasma generating tube 142.
  • the gas supplied through the gas injection unit 141 connected to the plasma reactive gas supply unit (not shown) provided separately may flow through the gas supply passage 141a and be supplied into the plasma generation tube 142.
  • the lower end 142a of the gas injection unit 141 may be formed to be opened toward the power grid 144. Gas flows into the plasma generating tube 142 through the opened portion of the gas injection unit 141.
  • the plasma electrode 143 provided on the ceiling side of the plasma generating tube 142 is preferably formed to cover the entire longitudinal direction of the plasma generating tube 142.
  • the plasma electrode 143 may be connected to the impedance matching unit 182 and the RF power source 181 provided outside the plasma generating tube 142.
  • the RF power source 181 preferably supplies an AC power source having a frequency of 13.56 MHz.
  • the plasma electrode 143 may have various forms. That is, as shown in FIGS. 7A to 7C, the plasma electrode 143 may be formed to generate any one of capacitive plasma (CCP), inductive plasma (ICP), or DC pulsed plasma. Can be.
  • CCP capacitive plasma
  • ICP inductive plasma
  • DC pulsed plasma Can be.
  • the plasma electrode 143a may generate capacitive plasma by using a plasma electrode 143a having a shape similar to that of the plasma generating tube 142, that is, a rectangle having a length longer than the width, and the AC power source 181a.
  • the plasma electrode 143b is formed of an approximately C-shaped antenna electrode, and two antenna electrodes facing each other are used, and an inductive plasma can be generated using an AC power source 181b connected to each antenna electrode. .
  • a DC pulsed plasma may be generated using a rectangular electrode 143c and a DC power source 181c connected thereto.
  • the power grid (144) formed in the lower opening of the plasma generating tube 142 may be connected to the grid power supply (183).
  • the grid power supply 183 may be a DC power source or an RF power source.
  • a showerhead 145 may be formed under the power grid 144.
  • the reaction gas supplied into the plasma generating tube 142 forms the plasma P by an electrochemical reaction with the plasma electrode 143 and the power grid 144.
  • the far plasma thus produced may be supplied to the substrate 110 and may react with the source gas to form an atomic layer on the surface of the substrate 110.
  • Plasma discharge portions 146 and 147 may be formed in the power grid 144 and the showerhead 145. That is, the first plasma discharge unit 147 may be formed in the power grid 144, and the second plasma discharge unit 146 may be formed in the shower head 145 so that the plasma may be supplied toward the substrate 110. have. At this time, it is preferable that the first / second plasma discharge portions 146 and 147 communicate with each other.
  • the plasma discharge parts 146 and 147 may be formed in the form of holes or slits. When the plasma discharge portions 146 and 147 have the shape of holes, the plasma discharge portions 146 and 147 should be formed evenly over the entire lower portion of the plasma generating tube 142.
  • the plasma generators 146 and 147 may be formed in a direction orthogonal to the movement direction TD of the substrate 110. That is, the slit-type plasma generating units 146 and 147 may be formed along the longitudinal direction of the plasma generating tube 142. If formed along the longitudinal direction of the plasma generating tube 142, it is possible to supply a plasma having an even distribution according to the entire area of the substrate 110. That is, the uniformity of the plasma can be improved.
  • a source gas unit 130 supplying a source gas and a plasma unit 140 supplying a plasma are separated from each other. Or it is formed in the form of a bar to form an atomic layer.
  • the source gas unit 130 and the plasma unit 140 of the atomic layer deposition apparatus 100 according to the embodiment of the present invention may be formed to be spatially divided. That is, in the present invention, the atomic layer may be deposited using the remote plasma unit 140 and the source gas unit 130 having a space division type. In this way, a fast throughput can be secured by using a space-divided far-field plasma.
  • the source gas unit 130 illustrated in FIG. 2 may perform exhaust and suction of the source gas in one unit 130.
  • the gas supply unit 160 connected to the source gas unit 130 receives and exhausts source gas, and sucks out residual source gas not involved in the reaction and exhausts the source gas to the outside.
  • FIG. 8 illustrates a high-speed remote plasma atomic layer deposition apparatus 200 in which a source gas unit 230, a plasma unit 240, and a vacuum exhaust unit 250 are formed in the chamber 210.
  • the atomic layer deposition apparatus 200 may further include a chamber dry pump 202 connected to the chamber 201 to form a vacuum in the chamber 201.
  • the chamber dry pump 202 is provided outside the chamber 101 and may be connected to the chamber 201 by a pumping pipe 203.
  • the pumping pipe 203 may be connected to the chamber 201, or may be connected to the side where the substrate 210 is located as shown in FIG.
  • An exhaust port 204 may be formed at the lower side of the chamber 201 or the substrate 210 to be connected to the pumping pipe 203.
  • the atomic layer deposition apparatus 200 shown in FIG. 8 may vacuum the inside of the chamber 201 by the operation of the chamber dry pump 202 before starting the deposition process, by the chamber dry pump 202.
  • the inside of the chamber 201 may be vacuumed up to a base pressure (about 10-3 torr), and the inside of the chamber 201 may be maintained at atmospheric pressure.
  • the chamber dry pump 202 may stop operating, and the deposition process may adjust the process pressure (0.1 to 0.2 torr) inside the chamber 201 by the vacuum pump 270.
  • the vacuum pumping unit 270 and the chamber dry pump 202 work together to create a pressure difference inside the chamber 201 and homogeneity of the gas discharged (injected) from the source gas unit 230 by the pressure difference. It can also improve the uniformity and make the spray evenly.
  • the source gas unit 230 may replace the chamber dry pump 202 and replace the function of the chamber dry pump 202. That is, the basic pressure may be formed or the pressure difference may be formed in the chamber 201 by the gas suction (suction, suction) operation of the source gas unit 230.
  • the source gas unit 230 may be connected to the gas supply unit 260 by a pipe 261, and the vacuum exhaust unit 250 may be connected to the vacuum pumping unit 270 by a vacuum pipe 271.
  • the vacuum pipe 271 may be connected to the vacuum collecting unit 279 formed on the upper portion of the chamber 201 to communicate with the vacuum exhausting unit 250.
  • the source gas sucked by the source gas unit 230 may be discharged to the vacuum pumping unit 270 by the vacuum pipe 272.
  • the vacuum pipe 272 may be connected to a collecting unit 269 formed in the chamber 201 to communicate with the source gas unit 230.
  • a vacuum exhaust unit 350 may be formed between the source gas unit 330 and the plasma unit 340 to suck and discharge the source gas.
  • the vacuum exhaust unit 350 may be provided on the other side of the plasma unit 340.
  • the source gas unit 330, the plasma unit 340, and the vacuum exhaust unit 350 are positioned in the chamber 301, and an exhaust port 301a is provided in a portion of the chamber 301 connected to the vacuum pumping unit 370. May be formed.
  • the remaining part is the same as the atomic layer deposition apparatus 200 shown in FIG.
  • the reference numerals are in the form of three digit numbers, the reference numerals for the same parts are described so that the second digit and the first digit are the same.
  • the high speed remote plasma atomic layer deposition apparatus 400 illustrated in FIG. 10 has a structure in which the source gas unit 430 only exhausts the source gas and cannot inhale the source gas. In addition, there is no separate vacuum exhaust.
  • the exhaust and vacuum suction of the source gas may be performed by the vacuum pump 470 connected to the chamber 401 and the chamber 410. It may also be performed in a chamber dry pump 402 connected to the chamber 401.
  • Emission of the source gas not participating in the reaction or remaining source gas after the reaction may be made through the port 401a in the chamber 401 to correspond to a position between the source gas unit 430 and the plasma unit 440.
  • the vacuum exhaust may be made through the port 401a formed in the chamber 401 to correspond to the other side of the plasma unit 440.
  • the vacuum pump 470 may be connected to the port 401a.
  • the remaining part is the same as the atomic layer deposition apparatus 300 shown in FIG.
  • the fast remote plasma atomic layer deposition apparatus 500 illustrated in FIG. 11 is a purge tube 590 between the plasma unit 540 and the vacuum exhaust unit 550, as compared with the atomic layer deposition apparatus 100 illustrated in FIG. 2. There is a difference in the point at which) is formed.
  • the purge pipe 590 may have a pipe or bar shape similar to the source gas unit 530, and may include a purge pipe body 591 having purge ports 592 and 593 formed at the bottom and the top thereof, respectively.
  • the purge pipe 590 may be connected to the purge gas line 596 by the purge pipe 597. The remaining part is the same as the atomic layer deposition apparatus of FIG.
  • the present invention can be used in the field of manufacturing semiconductors, displays, and the like.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil à distance à haute vitesse destiné à déposer une couche atomique de plasma, comprenant les éléments suivants : une unité de gaz source pour fournir du gaz à un substrat ; une unité de plasma pour générer du plasma pour le substrat ; et une unité d'aspiration de gaz disposée entre l'unité de gaz source et l'unité de plasma pour aspirer le gaz source, et le substrat peut être utilisé pour permettre un déplacement relatif dans la direction coupant le sens longitudinal d'au moins l'unité de gaz source, l'unité de plasma et/ou l'unité d'aspiration de gaz. Le débit rapide peut ainsi être assuré en déposant une couche atomique en se servant de l'unité de plasma et de l'unité de gaz source du type à division d'espace.
PCT/KR2014/000184 2013-01-14 2014-01-08 Appareil à distance à haute vitesse destiné à déposer une couche atomique de plasma WO2014109535A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020130004051A KR101407068B1 (ko) 2013-01-14 2013-01-14 고속 원거리 플라즈마 원자층 증착장치
KR10-2013-0004051 2013-01-14

Publications (1)

Publication Number Publication Date
WO2014109535A1 true WO2014109535A1 (fr) 2014-07-17

Family

ID=51132783

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2014/000184 WO2014109535A1 (fr) 2013-01-14 2014-01-08 Appareil à distance à haute vitesse destiné à déposer une couche atomique de plasma

Country Status (3)

Country Link
KR (1) KR101407068B1 (fr)
TW (1) TWI583821B (fr)
WO (1) WO2014109535A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI127769B (en) * 2016-03-11 2019-02-15 Beneq Oy Apparatus and method
KR102131933B1 (ko) 2018-08-17 2020-07-09 주식회사 넥서스비 원자층 증착 장치 및 이를 이용한 원자층 증착 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090080257A (ko) * 2008-01-21 2009-07-24 한양대학교 산학협력단 플라즈마 처리장치
KR20120051059A (ko) * 2009-07-30 2012-05-21 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오 원자층 증착을 위한 장치 및 방법
KR20120111108A (ko) * 2011-03-31 2012-10-10 한양대학교 산학협력단 가스 주입 장치, 원자층 증착장치 및 이 장치를 이용한 원자층 증착방법
KR20120135906A (ko) * 2010-02-25 2012-12-17 비전 다이나믹스 홀딩 비.브이. 층 증착을 위한 방법 및 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070221129A1 (en) * 2006-03-21 2007-09-27 Atto Co., Ltd Apparatus for depositing atomic layer using gas separation type showerhead

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090080257A (ko) * 2008-01-21 2009-07-24 한양대학교 산학협력단 플라즈마 처리장치
KR20120051059A (ko) * 2009-07-30 2012-05-21 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오 원자층 증착을 위한 장치 및 방법
KR20120135906A (ko) * 2010-02-25 2012-12-17 비전 다이나믹스 홀딩 비.브이. 층 증착을 위한 방법 및 장치
KR20120111108A (ko) * 2011-03-31 2012-10-10 한양대학교 산학협력단 가스 주입 장치, 원자층 증착장치 및 이 장치를 이용한 원자층 증착방법

Also Published As

Publication number Publication date
TW201428131A (zh) 2014-07-16
TWI583821B (zh) 2017-05-21
KR101407068B1 (ko) 2014-06-13

Similar Documents

Publication Publication Date Title
KR101944894B1 (ko) 대칭적인 플라즈마 프로세스 챔버
WO2009104918A2 (fr) Appareil et procédé pour traitement de substrat
WO2014030973A1 (fr) Appareil de traitement de substrat et procédé de traitement de substrat
WO2013095030A1 (fr) Appareil de traitement de substrat et procédé de traitement de substrat
WO2012134070A2 (fr) Appareil d'injection de gaz, appareil de dépôt de couche atomique, et méthode de dépôt de couche atomique utilisant l'appareil
WO2015072691A1 (fr) Appareil et procédé de dépôt de couche atomique
WO2014109535A1 (fr) Appareil à distance à haute vitesse destiné à déposer une couche atomique de plasma
WO2019212270A1 (fr) Appareil de traitement de substrat
WO2014119971A1 (fr) Dispositif de dépôt de film mince en phase vapeur
WO2014007572A1 (fr) Appareil de traitement de substrat
KR20110054726A (ko) 기판처리장치
WO2015083883A1 (fr) Appareil permettant de traiter un substrat
KR20130071586A (ko) 다이렉트 플라즈마 형성 증착장치
WO2022260473A1 (fr) Procédé de formation d'une couche barrière
KR101627698B1 (ko) 기판처리장치
WO2024010295A1 (fr) Appareil de pulvérisation de gaz, appareil de traitement de substrat et procédé de dépôt de couche mince
WO2024054056A1 (fr) Appareil de pulvérisation de gaz, appareil de traitement de substrat et procédé de dépôt de film mince
KR102195981B1 (ko) 유도 결합 플라즈마 처리장치
WO2020138739A2 (fr) Pomme de douche pour dépôt chimique en phase vapeur et appareil de dépôt comprenant celle-ci
WO2015072690A1 (fr) Appareil et procédé de dépôt de couche atomique
CN214043598U (zh) 电感耦合等离子体处理装置
WO2020235912A1 (fr) Dispositif de traitement de substrat
KR102599410B1 (ko) 기판 처리 장치
WO2023008805A1 (fr) Appareil de traitement de substrat
KR20230165965A (ko) 박막 처리 장치

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14737945

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14737945

Country of ref document: EP

Kind code of ref document: A1