WO2014093295A3 - Nanostructured thin-film solar cell - Google Patents

Nanostructured thin-film solar cell Download PDF

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Publication number
WO2014093295A3
WO2014093295A3 PCT/US2013/074032 US2013074032W WO2014093295A3 WO 2014093295 A3 WO2014093295 A3 WO 2014093295A3 US 2013074032 W US2013074032 W US 2013074032W WO 2014093295 A3 WO2014093295 A3 WO 2014093295A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
film solar
nanocones
nanostructured thin
photovoltaic absorber
Prior art date
Application number
PCT/US2013/074032
Other languages
French (fr)
Other versions
WO2014093295A2 (en
Inventor
Inna Kozinsky
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP13811745.2A priority Critical patent/EP2929565A2/en
Priority to US14/651,063 priority patent/US20150325712A1/en
Publication of WO2014093295A2 publication Critical patent/WO2014093295A2/en
Publication of WO2014093295A3 publication Critical patent/WO2014093295A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Abstract

A nanostructured thin-film solar cell in one embodiment includes a photovoltaic absorber including a plurality of nanocones, each of the nanocones defining a longitudinal axis which extends through a first surface of the nanocone and a second surface of the nanocone, a translucent conductive coating positioned above the first surfaces of the photovoltaic absorber nanocones, and a conductive layer positioned on the second surfaces of the photovoltaic absorber nanocones.
PCT/US2013/074032 2012-12-10 2013-12-10 Nanostructured thin-film solar cell WO2014093295A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP13811745.2A EP2929565A2 (en) 2012-12-10 2013-12-10 Nanostructured thin-film solar cell
US14/651,063 US20150325712A1 (en) 2012-12-10 2013-12-10 Nanostructured Thin-Film Solar Cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261735198P 2012-12-10 2012-12-10
US61/735,198 2012-12-10

Publications (2)

Publication Number Publication Date
WO2014093295A2 WO2014093295A2 (en) 2014-06-19
WO2014093295A3 true WO2014093295A3 (en) 2014-10-23

Family

ID=49877062

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/074032 WO2014093295A2 (en) 2012-12-10 2013-12-10 Nanostructured thin-film solar cell

Country Status (3)

Country Link
US (1) US20150325712A1 (en)
EP (1) EP2929565A2 (en)
WO (1) WO2014093295A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108054225A (en) * 2017-12-13 2018-05-18 浙江海洋大学 A kind of cuprous oxide solar cell based on nano structure membrane electrode and preparation method thereof
CN108409155A (en) * 2018-05-31 2018-08-17 厦门大学 The preparation method of silica nanometer array on a kind of glass substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109962122A (en) * 2017-12-22 2019-07-02 北京铂阳顶荣光伏科技有限公司 Thin-film solar cells and preparation method thereof

Citations (4)

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Publication number Priority date Publication date Assignee Title
US20100178417A1 (en) * 2009-01-09 2010-07-15 Connor Steve T Systems, methods, devices and arrangements for nanowire meshes
US20110095389A1 (en) * 2009-10-23 2011-04-28 The Board Of Trustees Of The Leland Stanford Junior University Optoelectronic Semiconductor Device and Method of Fabrication
US20110094651A1 (en) * 2009-10-22 2011-04-28 Fujifilm Corporation Method for producing transparent conductor
US20110186119A1 (en) * 2009-12-24 2011-08-04 Atwater Harry A Light-trapping plasmonic back reflector design for solar cells

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US8198796B2 (en) * 2008-07-25 2012-06-12 Konica Minolta Holdings, Inc. Transparent electrode and production method of same
US8878055B2 (en) * 2010-08-09 2014-11-04 International Business Machines Corporation Efficient nanoscale solar cell and fabrication method
US9118272B2 (en) * 2010-09-08 2015-08-25 Momentive Performance Materials Inc. Light trapping photovoltaic cells
US20120286389A1 (en) * 2011-05-12 2012-11-15 Anjia Gu Method of design and growth of single-crystal 3D nanostructured solar cell or detector
US8628996B2 (en) * 2011-06-15 2014-01-14 International Business Machines Corporation Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells
US8685858B2 (en) * 2011-08-30 2014-04-01 International Business Machines Corporation Formation of metal nanospheres and microspheres
WO2014026109A1 (en) * 2012-08-09 2014-02-13 The Board Of Trustees Of The Leland Stanford Junior University Ultra thin film nanostructured solar cell

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US20100178417A1 (en) * 2009-01-09 2010-07-15 Connor Steve T Systems, methods, devices and arrangements for nanowire meshes
US20110094651A1 (en) * 2009-10-22 2011-04-28 Fujifilm Corporation Method for producing transparent conductor
US20110095389A1 (en) * 2009-10-23 2011-04-28 The Board Of Trustees Of The Leland Stanford Junior University Optoelectronic Semiconductor Device and Method of Fabrication
US20110186119A1 (en) * 2009-12-24 2011-08-04 Atwater Harry A Light-trapping plasmonic back reflector design for solar cells

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JIA ZHU ET AL: "Nanodome Solar Cells with Efficient Light Management and Self-Cleaning", NANO LETTERS, AMERICAN CHEMICAL SOCIETY, US, vol. 10, no. 6, 9 June 2010 (2010-06-09), pages 1979 - 1984, XP002632310, ISSN: 1530-6984, [retrieved on 20091105], DOI: 10.1021/NL9034237 *
ZHU J ET AL: "Nanostructured photon management for high performance solar cells", MATERIALS SCIENCE AND ENGINEERING R: REPORTS, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 70, no. 3-6, 22 November 2010 (2010-11-22), pages 330 - 340, XP027537230, ISSN: 0927-796X, [retrieved on 20100729] *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108054225A (en) * 2017-12-13 2018-05-18 浙江海洋大学 A kind of cuprous oxide solar cell based on nano structure membrane electrode and preparation method thereof
CN108409155A (en) * 2018-05-31 2018-08-17 厦门大学 The preparation method of silica nanometer array on a kind of glass substrate

Also Published As

Publication number Publication date
US20150325712A1 (en) 2015-11-12
WO2014093295A2 (en) 2014-06-19
EP2929565A2 (en) 2015-10-14

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