WO2014074496A3 - Cam nand with or function and full chip search capability - Google Patents

Cam nand with or function and full chip search capability Download PDF

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Publication number
WO2014074496A3
WO2014074496A3 PCT/US2013/068448 US2013068448W WO2014074496A3 WO 2014074496 A3 WO2014074496 A3 WO 2014074496A3 US 2013068448 W US2013068448 W US 2013068448W WO 2014074496 A3 WO2014074496 A3 WO 2014074496A3
Authority
WO
WIPO (PCT)
Prior art keywords
operations
data
nand
cam
block
Prior art date
Application number
PCT/US2013/068448
Other languages
French (fr)
Other versions
WO2014074496A2 (en
Inventor
Yan Li
Steven T. Sprouse
Original Assignee
Sandisk Technologies Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/749,361 external-priority patent/US8634247B1/en
Priority claimed from US13/756,076 external-priority patent/US8811085B2/en
Priority claimed from US13/827,407 external-priority patent/US8792279B2/en
Priority claimed from US13/957,248 external-priority patent/US8780635B2/en
Priority claimed from US13/957,219 external-priority patent/US8773909B2/en
Priority claimed from US13/957,198 external-priority patent/US8780634B2/en
Application filed by Sandisk Technologies Inc. filed Critical Sandisk Technologies Inc.
Publication of WO2014074496A2 publication Critical patent/WO2014074496A2/en
Publication of WO2014074496A3 publication Critical patent/WO2014074496A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)

Abstract

Various techniques for extending the capabilities of CAM NAND type memories are discussed. Multi-block or even full chip search operations can be performed. In addition to the inherent AND property of NAND strings, the memory array has an inherent OR property between NAND string from different blocks along the same bit line that can be exploited through multi-block CAM-type operations. To reduce data-dependent word line to word line effects, in multiple data dependent sensing operations, the sensing can be broken up into sub-operations that avoid data dependent values on adjacent word lines. To improve data protection, subsequent to writing a memory block with indices, the word lines are read back and compared bit-by-bit with their intended values and the results are accumulated to determine whether any of indices include error. A bloom filter can also be used as an initial check during data search operations in order to provide increased data protection.
PCT/US2013/068448 2012-11-09 2013-11-05 Cam nand with or function and full chip search capability WO2014074496A2 (en)

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
US201261724401P 2012-11-09 2012-11-09
US61/724,401 2012-11-09
US201261730884P 2012-11-28 2012-11-28
US61/730,884 2012-11-28
US13/749,361 US8634247B1 (en) 2012-11-09 2013-01-24 NAND flash based content addressable memory
US13/749,361 2013-01-24
US13/756,076 US8811085B2 (en) 2012-11-09 2013-01-31 On-device data analytics using NAND flash based intelligent memory
US13/756,076 2013-01-31
US13/827,407 US8792279B2 (en) 2012-11-09 2013-03-14 Architectures for data analytics using computational NAND memory
US13/827,407 2013-03-14
US13/957,248 US8780635B2 (en) 2012-11-09 2013-08-01 Use of bloom filter and improved program algorithm for increased data protection in CAM NAND memory
US13/957,198 2013-08-01
US13/957,248 2013-08-01
US13/957,219 2013-08-01
US13/957,219 US8773909B2 (en) 2012-11-09 2013-08-01 CAM NAND with or function and full chip search capability
US13/957,198 US8780634B2 (en) 2012-11-09 2013-08-01 CAM NAND with OR function and full chip search capability

Publications (2)

Publication Number Publication Date
WO2014074496A2 WO2014074496A2 (en) 2014-05-15
WO2014074496A3 true WO2014074496A3 (en) 2014-07-03

Family

ID=50685301

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/068448 WO2014074496A2 (en) 2012-11-09 2013-11-05 Cam nand with or function and full chip search capability

Country Status (1)

Country Link
WO (1) WO2014074496A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11158369B2 (en) * 2018-12-26 2021-10-26 Western Digital Technologies, Inc. On-chip non-volatile memory (NVM) search

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1720168A1 (en) * 2005-04-27 2006-11-08 Samsung Electronics Co., Ltd. Integrated circuit device, flash memory array, nonvolatile memory device and operating method
US20090141566A1 (en) * 2007-12-03 2009-06-04 International Business Machines Corporation Structure for implementing memory array device with built in computation capability
US20090190404A1 (en) * 2008-01-25 2009-07-30 Roohparvar Frankie F Nand flash content addressable memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7170802B2 (en) 2003-12-31 2007-01-30 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US8287353B2 (en) 2003-07-02 2012-10-16 Scientific Games International, Inc. Lottery game method
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7394690B2 (en) 2006-03-24 2008-07-01 Sandisk Corporation Method for column redundancy using data latches in solid-state memories
US7616499B2 (en) 2006-12-28 2009-11-10 Sandisk Corporation Retention margin program verification
US7477547B2 (en) 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US8102705B2 (en) 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US7974124B2 (en) 2009-06-24 2011-07-05 Sandisk Corporation Pointer based column selection techniques in non-volatile memories
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1720168A1 (en) * 2005-04-27 2006-11-08 Samsung Electronics Co., Ltd. Integrated circuit device, flash memory array, nonvolatile memory device and operating method
US20090141566A1 (en) * 2007-12-03 2009-06-04 International Business Machines Corporation Structure for implementing memory array device with built in computation capability
US20090190404A1 (en) * 2008-01-25 2009-07-30 Roohparvar Frankie F Nand flash content addressable memory

Also Published As

Publication number Publication date
WO2014074496A2 (en) 2014-05-15

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