WO2014072183A3 - Receiver and method for receiving optical signals - Google Patents

Receiver and method for receiving optical signals Download PDF

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Publication number
WO2014072183A3
WO2014072183A3 PCT/EP2013/072250 EP2013072250W WO2014072183A3 WO 2014072183 A3 WO2014072183 A3 WO 2014072183A3 EP 2013072250 W EP2013072250 W EP 2013072250W WO 2014072183 A3 WO2014072183 A3 WO 2014072183A3
Authority
WO
WIPO (PCT)
Prior art keywords
contact layer
absorption layer
layer
receiver
face
Prior art date
Application number
PCT/EP2013/072250
Other languages
German (de)
French (fr)
Other versions
WO2014072183A2 (en
Inventor
Klemens Janiak
Patrick Runge
Gan Zhou
Martin Schell
Original Assignee
Fraunhofer Gesellschaft Zur Förderung Der Angew. Forschung E.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft Zur Förderung Der Angew. Forschung E.V. filed Critical Fraunhofer Gesellschaft Zur Förderung Der Angew. Forschung E.V.
Publication of WO2014072183A2 publication Critical patent/WO2014072183A2/en
Publication of WO2014072183A3 publication Critical patent/WO2014072183A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention relates to a receiver (1) for receiving optical signals, having at least one waveguide (2), to which an optical input signal can be supplied, at least one first photodiode mesa (3) having at least one first contact layer (31), which is arranged on a part-face of the waveguide (2), and at least one absorption layer (33), which is arranged at least on a part-face of the first contact layer (31), and at least one second contact layer (32), which is arranged on the absorption layer (33), wherein the receiver (1) contains at least one second photodiode mesa (4), which contains at least one first contact layer (41), an absorption layer (43) and a second contact layer (42), wherein the first contact layer (41) is arranged on a part-face of the waveguide (2) and the at least one absorption layer (43) is arranged on at least one part-face of the first contact layer (41) and the second contact layer (42) is arranged on the absorption layer (43), wherein the absorption layer (33) of the first photodiode mesa (3) contains at least one quantum well structure and is designed to absorb light having a first polarisation direction more than light having a second polarisation direction, and the absorption layer (43) of the second photodiode mesa (4) is composed differently from the absorption layer (33) of the first photodiode mesa (3).
PCT/EP2013/072250 2012-11-12 2013-10-24 Receiver and method for receiving optical signals WO2014072183A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012220548.9 2012-11-12
DE201210220548 DE102012220548A1 (en) 2012-11-12 2012-11-12 Receiver and method for receiving optical signals

Publications (2)

Publication Number Publication Date
WO2014072183A2 WO2014072183A2 (en) 2014-05-15
WO2014072183A3 true WO2014072183A3 (en) 2014-11-27

Family

ID=49554211

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/072250 WO2014072183A2 (en) 2012-11-12 2013-10-24 Receiver and method for receiving optical signals

Country Status (2)

Country Link
DE (1) DE102012220548A1 (en)
WO (1) WO2014072183A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5117469A (en) * 1991-02-01 1992-05-26 Bell Communications Research, Inc. Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well
US5125050A (en) * 1991-05-03 1992-06-23 Bell Communications Research, Inc. Vertical metallically loaded polarization splitter and polarization-diversified optical receiver
EP0558089A2 (en) * 1992-02-28 1993-09-01 Hitachi, Ltd. Semiconductor optical integrated device and method of manufacture thereof, and light receiver using said device
ES2100791A2 (en) * 1994-02-03 1997-06-16 Telefonica Nacional Espana Co Optoelectronic photodetector device in a waveguide with varied polarization.
US20040096175A1 (en) * 2001-03-27 2004-05-20 Tolstikhin Valery I. Single-mode vertical integration of active devices within passive semiconductor waveguides, a method and its applications for use in planar wdm components

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5117469A (en) * 1991-02-01 1992-05-26 Bell Communications Research, Inc. Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well
US5125050A (en) * 1991-05-03 1992-06-23 Bell Communications Research, Inc. Vertical metallically loaded polarization splitter and polarization-diversified optical receiver
EP0558089A2 (en) * 1992-02-28 1993-09-01 Hitachi, Ltd. Semiconductor optical integrated device and method of manufacture thereof, and light receiver using said device
ES2100791A2 (en) * 1994-02-03 1997-06-16 Telefonica Nacional Espana Co Optoelectronic photodetector device in a waveguide with varied polarization.
US20040096175A1 (en) * 2001-03-27 2004-05-20 Tolstikhin Valery I. Single-mode vertical integration of active devices within passive semiconductor waveguides, a method and its applications for use in planar wdm components

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FERRERAS A ET AL: "Compressive strained multiquantum-well waveguide photodetectors for coherent receivers", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 7, no. 5, May 1995 (1995-05-01), pages 546 - 548, XP011432840, ISSN: 1041-1135, DOI: 10.1109/68.384539 *
LARSSON A ET AL: "TUNABLE SUPERLATTICE P-I-N PHOTODETECTORS: CHARACTERISTICS, THEORY, AND APPLICATIONS", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, USA, vol. 24, no. 5, May 1988 (1988-05-01), pages 787 - 801, XP000002071, ISSN: 0018-9197, DOI: 10.1109/3.195 *

Also Published As

Publication number Publication date
WO2014072183A2 (en) 2014-05-15
DE102012220548A1 (en) 2014-02-27

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