WO2014065825A1 - Procédé et système de duplexeur actif accordable électroniquement - Google Patents

Procédé et système de duplexeur actif accordable électroniquement Download PDF

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Publication number
WO2014065825A1
WO2014065825A1 PCT/US2012/062264 US2012062264W WO2014065825A1 WO 2014065825 A1 WO2014065825 A1 WO 2014065825A1 US 2012062264 W US2012062264 W US 2012062264W WO 2014065825 A1 WO2014065825 A1 WO 2014065825A1
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WO
WIPO (PCT)
Prior art keywords
port
duplexer
dup lexer
lexer
dup
Prior art date
Application number
PCT/US2012/062264
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English (en)
Inventor
Prasad Narasimha SHASTRY
Sureshbabu SUNDARAM
Balamurugan Sundaram
Original Assignee
Shastry Prasad Narasimha
Sundaram Sureshbabu
Balamurugan Sundaram
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shastry Prasad Narasimha, Sundaram Sureshbabu, Balamurugan Sundaram filed Critical Shastry Prasad Narasimha
Priority to PCT/US2012/062264 priority Critical patent/WO2014065825A1/fr
Publication of WO2014065825A1 publication Critical patent/WO2014065825A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/34—Networks for connecting several sources or loads working on different frequencies or frequency bands, to a common load or source
    • H03H11/344—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/46—One-port networks
    • H03H11/48—One-port networks simulating reactances
    • H03H11/481—Simulating capacitances
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H2210/00—Indexing scheme relating to details of tunable filters
    • H03H2210/01—Tuned parameter of filter characteristics
    • H03H2210/012—Centre frequency; Cut-off frequency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H2210/00—Indexing scheme relating to details of tunable filters
    • H03H2210/02—Variable filter component
    • H03H2210/025—Capacitor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H2210/00—Indexing scheme relating to details of tunable filters
    • H03H2210/03—Type of tuning
    • H03H2210/033—Continuous
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/18—Networks for phase shifting

Definitions

  • the present inventive concept relates to a transceiver antenna, especially an
  • an electronically tunable active duplexer for wireless transceiver applications. Specifically, it relates to an active duplexer that includes one or more capacitance tuning circuit to allow for continuous electronic tuning, which permits the simultaneous transmission and reception of signals at same or different frequencies.
  • a duplexer is a critical component in the functioning of wireless transceivers, such as mobile phones, wireless network adapters, and PDAs. It allows simultaneous transmission and reception of signals from a single antenna. It provides isolation between transmitter and receiver.
  • the duplexers currently used in transceivers are passive filters and hence have insertion loss across the device. Furthermore, they are not tunable, or if they are tunable, they are not tunable electronically, and they do not provide amplification of transmitted and received signals.
  • a DA distributed amplifier
  • a DA is inherently bi-directional because of the symmetry in its architecture.
  • the signal paths in an exemplary DA are shown in FIG. 1.
  • S 2 i and S 34 represent the gains in the two directions.
  • a DA can be designed in such a way to produce low crosstalk between isolated ports, represented by S31 and S24 (see references 2, 3, and 4 [infra], which are herein incorporated by reference). Specifically, this is achieved by inserting phase shifting networks between the distributed amplifier gain cells (DA cells) to cancel the signals at the isolated ports at a given frequency as shown in FIG. 2 (see reference 3). Yet, the active duplexers reported in references 2 and 3 are not tunable. However, the isolation level and frequency can be slightly adjusted in those duplexers by replacing the fixed capacitors in the phase shifting networks (references 2 and 3) with mechanically adjustable capacitors (reference 4).
  • Each DA cell is comprised of a Field Effect Transistor (FET) and gate and drain line inductors (reference 1 ).
  • FET Field Effect Transistor
  • reference 1 gate and drain line inductors
  • duplexers generally describe duplexers.
  • U.S. Pat. No. 6,472,952 which is herein incorporated by reference, generally describes phase shifters, which are useful in duplexers.
  • U.S. Pat. No. 6,784,837 which is herein incorporated by reference, teaches a transmit/receive module for a high power active phased array antenna system based upon a combination of Hybrid Microwave Integrated Circuit (MIC) as well as Monolithic Microwave Integrated Circuit (MMIC) technology.
  • MIC Hybrid Microwave Integrated Circuit
  • MMIC Monolithic Microwave Integrated Circuit
  • the active duplexer of reference 2 was designed for isolation over a wideband.
  • the Chebyshev scaling of transconductances of transistors in a DA was shown to provide the specified isolation over a large bandwidth.
  • the duplexer provided a gain of 5 dB but the average Transmitter-Receiver isolation was less than 15 dB in the frequency range between 3 and 5 GHz.
  • the active duplexer of reference 3 was designed with fixed values of capacitances on the gate and drain lines of a DA.
  • the Transmitter-Receiver isolation achieved was about 17 dB and the gain was about 2.6 dB at 2.4 GHz.
  • the active duplexer of reference 4 provided a gain of 9 dB and a Transmitter- Receiver isolation of about 28 dB at 1.97 GHz.
  • the mechanically tunable capacitors on the gate and drain lines were intended for minute adjustments of the isolation frequency and level of isolation.
  • Many versions of this duplexer were fabricated using mechanically tunable capacitors for improved performance (reference 5), but none of them showed any improvement in isolation level or gain. Moreover, they were found to be unsuitable for repeated operation (by tuning) of the active duplexer over a desired set of frequencies in the tuning range.
  • the required phase shift ⁇ between the DA cells for obtaining the isolation between ports 1 and 3 in an active duplexer is determined by the number (n) of transistors used.
  • the present inventive concept is an improvement over U.S. patent no. 7,576,627 entitled "Electronically Tunable Active Duplexer," the entirety of which is herein incorporated by reference.
  • the tunable active duplexer of the present inventive concept has relatively constant forward and reverse signal gains between coupled ports while providing high signal isolation between isolated ports over a tuning range.
  • Objects of the instant invention include providing an electronically tunable active duplexer ("ETAD") system and related methods for wireless transceiver applications.
  • the ETAD offers improved precision in antenna tuning to obtain higher isolation of a desired frequency and provides repeatable, electronically tunable, isolations over a desired band of frequencies, which is a considerable improvement over the active duplexers described in references 2, 3, and 4.
  • the ETAD comprises a phase shifting network between distributed amplifier gain cells, wherein the phase shifting network does not require any varactor diode, but instead achieves the desirable variable capacitance by electronically tuning the gate voltage of a transistor.
  • phase shifting networks enables one to electronically tune, with ease and precision, the frequency at which isolation is desired, over a band in both transmit and receive modes of operations.
  • the electronically tunable configuration of this invention allows precise tuning to obtain higher isolation at a desired
  • the distributed amplifier gain cells of the ETAD comprise GaAsFET, gate and drain line inductors.
  • the ETAD optionally comprises bandpass filters on both transmission and receiver signal paths.
  • the ETAD can be used in either antenna configuration A or B (supra).
  • the inventors have developed a novel way of changing the phase shift through the phase-shifting networks without varactor diodes.
  • the variable drain-source capacitance needed has been realized by tuning the gate voltage of a transistor.
  • the range of tunable voltage to achieve the necessary frequency of isolation is well within the maximum power supply voltage to the chip, thus enabling single power supply operation of the active duplexer. Due to the simplicity of this design, it can be adapted to any other device technology.
  • An exemplary embodiment of an electronically tunable active duplexer MMIC of the present inventive concept is provided.
  • the exemplary embodiment provides an electronically tunable isolation of 20 to 45 dB between isolated ports and a gain of 14.5 to 16.5 dB between coupled ports in the tunable range from 2.32 to 2.48 GHz in both transmit and receive modes.
  • This chip is suitable for 2.3GHz WiMAX and WiBro applications.
  • Figure 1 depicts the signal paths in a distributed amplifier.
  • Figure 2 depicts a Tunable Active Duplexer. Ports 1 , 2, 3, and 4 are labeled.
  • T Bandpass filters are labeled, T for filters designed to pass transmit signals and R for filters designed to pass receive signals.
  • Tunable Phase Shifting Networks are indicated by TPSN.
  • Figure 3 depicts an exemplary circuit diagram of an Electronically Tunable Active
  • V1 , V2 and V3 each represent a capacitance tuning circuit, an example of which is enlarged and shown in greater detail in Figure 4.
  • V d and V g represent the DC Bias to the transistors.
  • Figure 4 depicts an enlarged and greater detail exemplary sub-component of the exemplary schematic diagram of Figure 3.
  • Figure 4 depicts an exemplary capacitance tuning circuit.
  • Figure 5 depicts measured tunable isolation plots (S 31 of FIG. 1 ) at various tuning voltage combinations (see Table), where the isolation is achieved between ports 1 and 3.
  • Figure 6 depicts measured tunable isolation plots (S24 of FIG. 1 ) at various tuning voltage combinations (see Table) between ports 2 and 4.
  • Figure 7 depicts measured gains (S 2 i of FIG. 1 ) in the transmit mode at various tuning voltage combinations (see Table).
  • Figure 8 depicts measured gains (S34 of FIG. 1 ) in the receive mode at various tuning voltage combinations (see Table).
  • Figure 9 depicts measured forward input return loss (S ) for various tuning voltage combinations (see Table).
  • Figure 10 depicts measured reverse input return loss (S44) for various tuning voltage combinations (see Table).
  • Figure 1 1 depicts measured forward output return loss (S 22 ) for various tuning
  • Figure 12 depicts measured reverse output return loss (S33) for various tuning
  • Figure 13 depicts measured capacitance at various tuning voltage combinations from 0 to 0.85V.
  • Figure 14 depicts measured phases of transmission coefficients in the transmit mode
  • Figure 15 depicts measured phases of transmission coefficients in the receive mode
  • the present general inventive concept provides an electronically tunable active duplexer.
  • One embodiment of the tunable active duplexer has been designed and produced in the form of a MMIC chip.
  • the tunable active duplexer includes a capacitance tuning circuit.
  • One exemplary embodiment of the tunable active duplexer gave a gain of 14 dB and isolation ranging from 21 to 44 dB in the tuning range (160 MHz) in both transmit and receive modes of operations. The return losses at all four ports were greater than 8 dB.
  • This duplexer chip is suitable for 2.3GHz WiMax and WiBro applications.
  • the present inventive concept provides several advantages over the prior art.
  • the dynamic range, the power handling capability and the noise figure of the active duplexer will depend upon the chosen transistor. In either antenna configuration A or B, tradeoffs between the dynamic range, power handling capability and noise figure will always be present. Moreover, in antenna configuration A the receiver filter R connected to port 4 of the duplexer shown in Figure 2 is not required if improved noise performance is essential and additional isolation is not necessary. Therefore, the primary advantages of this invention, namely gain in both transmit and receive modes and at the same time isolation between both pairs of isolated ports along with optional antenna configurations, can be utilized appropriately to achieve the desired duplexer specifications.
  • An exemplary embodiment of the present inventive concept has been realized as a MMIC, which is a significant improvement in terms of form-factor reduction.
  • Tunable duplexers of the prior art were demonstrated on a radio frequency PCB (Printed Circuit Board) which had a size of 1 10mm x 80mm x 0.5mm.
  • the relative dielectric constant of the substrate (PCB) was 2.9.
  • the prior art circuits were fabricated using hybrid microwave integrated circuit (MIC) technology. In this technology, packaged discrete components such as transistors, resistors, capacitors, inductors, and diodes, that are made of different materials, are assembled on a PCB having metal traces known as microstriplines; thus forming an electronic circuit.
  • MIC hybrid microwave integrated circuit
  • the size (3.3mm x 2.3mm x 0.1 mm) has been reduced by a factor of more than 1000, thereby enabling the usage of the invention in applications where size of the circuit is critical.
  • the size reduction was accomplished by implementing the design on a 0.1 mm thick GaAs (Gallium Arsenide) wafer having a relative dielectric constant of 12.9. Due to reduction in thickness and increase in relative dielectric constant of the substrate the size reduction is achieved.
  • the Monolithic Microwave Integrated Circuit (MMIC) technology used in an embodiment of the present invention allows the fabrication of active (transistor) and passive (resistor, capacitor, inductor, and microstriplines) components of the circuit in the same substrate material.
  • the lengths of the metal traces (microstriplines) are drastically reduced in a MMIC; thus resulting in smaller size and superior performance relative to the same circuit fabricated using hybrid MIC technology.
  • Another advantage of the present inventive concept includes providing a way of changing the phase shift through a phase-shifting network in the active duplexer without using varactor diodes.
  • the variable capacitance previously achieved by changing the voltage of a varactor diode
  • a phase shifting network in order to tune the operating frequency has been realized by tuning the gate voltage of a transistor.
  • only transistors are used for both active duplexer operation and frequency tuning.
  • the implementation of the prior art (varactor diode based design) in the form of a MMIC required that the chosen foundry process supported technologies needed for both transistors and varactor diodes; and hence would be expensive and cumbersome.
  • CMOS Complementary Metal Oxide Semiconductor
  • HBT Hetero-Junction Bipolar Transistor
  • HEMT High Electron Mobility Transistor
  • GaN GaN
  • InP Indium Phosphide
  • SiGe Silicon Germanium
  • the prior art varactor-tuned phase-shifting networks required tuning voltages as high as 30 V and the transistors in the circuit needed a bias voltage of 2 V. Therefore, separate power supplies were needed for varactor diodes and transistors.
  • the tuning voltages needed to tune the phase-shifting network and the voltage needed to bias the transistors are derived from a single 5 V power supply. This is possible because in an embodiment of the present inventive concept, the transistor-tuned phase-shifting network requires only a maximum of 5 V.
  • the tuning voltages can be obtained by means of simple resistive voltage dividers.
  • the tunable phase-shifting networks were used only to obtain the required signal isolation between the isolated ports.
  • Another advantage of the present inventive concept is that the tunable phase shifting networks are used not only to obtain the required signal isolation between isolated ports, but also to obtain improved impedance matching at the ports. This has been accomplished by incorporating tunable phase shifting networks in the impedance matching networks at the ports.
  • FIG. 3 A schematic of the exemplary tunable active duplexer is shown in Fig. 3. The design approach used is explained in detail in reference [8].
  • the frequency (f 0 ) selected for isolation between ports 1 and 3 and, 2 and 4 is 2.3 GHz.
  • m is the number of ⁇ -sections between transistors
  • f 0 is the frequency at which isolation is desired
  • f c is the cutoff frequency of the gate and drain lines, in accordance with reference [8].
  • phase-shifting networks on gate and drain lines of an active duplexer are shown in Fig. 3.
  • the phase shifts through the phase shifting networks have to be realized accurately at that frequency.
  • a capacitance tuning circuit was designed and implemented.
  • This circuit enables the adjustment of the phase shift ( ⁇ ) through the phase shifting networks and also impedance matching at ports 2 and 3.
  • a variable capacitance Cv is realized between terminal IN and GND by adjusting the gate-source voltage of the transistor.
  • the capacitance Cv is equivalent to capacitor C in series with the drain-source capacitance (Cds) of the transistor. As the gate-source voltage is increased, Cds increases. This in turn increases the capacitance Cv.
  • the two resistors (Rb) act as a voltage divider and also provide isolation of the DC tuning voltage supply (VT) from RF signals.
  • the exemplary tunable capacitance circuit of Fig. 4 has a simulated capacitance (Cv) range from 100fF to 1500fF for a gate-source voltage (VT) varying from 0 to 1V.
  • exemplary duplexer schematic shown in Fig. 3 was implemented as a MMIC.
  • the circuit was simulated and optimized using Agilent's Advanced Design System (ADS).
  • ADS Agilent's Advanced Design System
  • the simulation showed forward and reverse gains (S 2 i and S 34 ) of 17dB and a return loss of more than 10dB at all four ports in the range 2-2.7GHz.
  • the frequency of isolation (S 31 and S24) was tunable from 2.25 to 2.5GHz.
  • the amplifier had a noise figure of 3.2dB and a P1dB of 13dBm at 2.3GHz. The amplifier was stable.
  • the duplexer has four RF ports and the test facility had only two RF probe positioners, the same circuit was fabricated with four different port termination combinations. Ports 3 and 4 and, ports 1 and 2 were terminated with 50 ohm on-chip resistors to measure forward and reverse gains and return losses. Ports 2 and 4 and, ports 1 and 3 were terminated with 50 ohm on-chip resistors to measure isolations.
  • Figs. 5 and 6 contain plots of isolation between ports (S31 and S24) for various tuning voltage combinations (see TABLE below). The isolations were between 21 and 44 dB in the tuning range (2.32 - 2.48 GHz).
  • the forward and reverse gains (S21 and S34) are shown in Figs. 7 and 8.
  • the gains in forward and reverse directions vary from 16.2 to 14.8 dB in the range 2 to 3 GHz.
  • the phases of S21 and S34 varied linearly in the range 2 to 3 GHz, as shown in Figs. 14 and 15.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

La présente invention concerne un duplexeur actif accordable électroniquement innovant et destiné à des applications d'émetteur-récepteur sans fil. Elle concerne plus précisément un duplexeur actif présentant un fonctionnement en duplex intégral permettant une émission et une réception simultanées de signaux à des fréquences identiques ou différentes. Dans la présente invention, les condensateurs fixes ou ajustables mécaniquement et les diodes varactors sont remplacés par un ou plusieurs circuits d'accord de capacité agencés en réseaux à décalage de phase permettant d'accorder électroniquement, simplement et avec précision, la fréquence à laquelle une isolation est souhaitée sur une bande et dans des modes de fonctionnement en émission et en réception.
PCT/US2012/062264 2012-10-26 2012-10-26 Procédé et système de duplexeur actif accordable électroniquement WO2014065825A1 (fr)

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PCT/US2012/062264 WO2014065825A1 (fr) 2012-10-26 2012-10-26 Procédé et système de duplexeur actif accordable électroniquement

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2551346A (en) * 2016-06-13 2017-12-20 Toshiba Kk Technique for full duplex with single antenna
CN107896094A (zh) * 2017-12-07 2018-04-10 中国电子科技集团公司第四十研究所 一种分布式放大器电路及其实现方法
US10644763B1 (en) 2019-03-21 2020-05-05 Kabushiki Kaisha Toshiba Technique for single antenna full duplex
US11569555B2 (en) * 2019-12-06 2023-01-31 Qualcomm Incorporated Phase shifter with active signal phase generation

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070247257A1 (en) * 2006-04-24 2007-10-25 Shastry Prasad N Electronically tunable active duplexer
US20090285135A1 (en) * 2008-05-19 2009-11-19 Nokia Corporation Apparatus method and computer program for radio-frequency path selection and tuning
US20100134202A1 (en) * 2008-12-02 2010-06-03 Nokia Corporation Output selection of multi-output filter
US20110316636A1 (en) * 2009-08-19 2011-12-29 Qualcomm Incorporated Digital tunable inter-stage matching circuit
US20120243447A1 (en) * 2011-03-21 2012-09-27 Qual Comm Incorporated Dual antenna distributed front-end radio

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070247257A1 (en) * 2006-04-24 2007-10-25 Shastry Prasad N Electronically tunable active duplexer
US20090285135A1 (en) * 2008-05-19 2009-11-19 Nokia Corporation Apparatus method and computer program for radio-frequency path selection and tuning
US20100134202A1 (en) * 2008-12-02 2010-06-03 Nokia Corporation Output selection of multi-output filter
US20110316636A1 (en) * 2009-08-19 2011-12-29 Qualcomm Incorporated Digital tunable inter-stage matching circuit
US20120243447A1 (en) * 2011-03-21 2012-09-27 Qual Comm Incorporated Dual antenna distributed front-end radio

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2551346A (en) * 2016-06-13 2017-12-20 Toshiba Kk Technique for full duplex with single antenna
US10644394B2 (en) 2016-06-13 2020-05-05 Kabushiki Kaisha Toshiba Technique for full duplex with single antenna
GB2551346B (en) * 2016-06-13 2020-05-06 Toshiba Kk Technique for full duplex with single antenna
CN107896094A (zh) * 2017-12-07 2018-04-10 中国电子科技集团公司第四十研究所 一种分布式放大器电路及其实现方法
US10644763B1 (en) 2019-03-21 2020-05-05 Kabushiki Kaisha Toshiba Technique for single antenna full duplex
US11569555B2 (en) * 2019-12-06 2023-01-31 Qualcomm Incorporated Phase shifter with active signal phase generation

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