WO2014037721A1 - Agencement cellulaire photovoltaïque concentré (cpv), module et procédé de fabrication - Google Patents
Agencement cellulaire photovoltaïque concentré (cpv), module et procédé de fabrication Download PDFInfo
- Publication number
- WO2014037721A1 WO2014037721A1 PCT/GB2013/052320 GB2013052320W WO2014037721A1 WO 2014037721 A1 WO2014037721 A1 WO 2014037721A1 GB 2013052320 W GB2013052320 W GB 2013052320W WO 2014037721 A1 WO2014037721 A1 WO 2014037721A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- cpv
- photovoltaic
- cell
- conductive
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 230000003287 optical effect Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 229920001296 polysiloxane Polymers 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- 238000013082 photovoltaic technology Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 239000004590 silicone sealant Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Definitions
- the present invention relates to backplane architecture for a concentrated photovoltaic module.
- the architecture permits rapid assembly of a photovoltaic receiver package onto a backplane using high speed pick and place (PnP) tools.
- PnP pick and place
- PV Solar photovoltaic
- multicrystalline silicon organic materials like dyes and finally inorganic III- V, semiconductor materials.
- Concentrated PV is a variation of solar PV technology which seeks to replace the large areas of semiconductor or thin-film materials by small areas of the more expensive, highly efficient III-V cells in combination with cheap plastic or glass Fresnel lenses or mirrors that concentrate the Sun's intensity several hundred times onto the cell .
- CPV modules or panels are mounted on a tracking system that keeps the focus of the Sun on the cell as it moves through the sky during the day.
- a complete CPV system can be broken down into a number of sub-units:
- III-V PV cells • III-V PV cells, receivers, lenses or mirrors which are assembled into
- Inverters - to convert the DC to an alternating current (AC) and feed the current into the grid
- CPV modules are constructed either using mirrors - a reflective system - or lenses - a refractive system.
- the main elements and technical challenges that need to be addressed in designing and constructing a CPV module are illustrated by reference to point focus reflective and refractive systems shown in Figure 1.
- the reflective system shown above uses a primary concave mirror (1) and a convex secondary mirror (2), with the light from the sun being focused through an optical rod (3) onto the solar cell (4), again mounted onto a suitable heatsink.
- This optical rod performs the same function as the SOE in the refractive system .
- the PV cell together with a silicon bypass or protection diode, PCB heatsink and SOE form a, so called, receiver (Rx) unit.
- the Rx is the power generator of the CPV system so its design, performance and reliability are one of the keys to building an efficient and economic system .
- Most manufacturers of CPV systems today use a SOE in their Rx design.
- a CPV module consists of an array of series connected Rx which have been mounted on the base of the module at the focus of either a parquet of Fresnel lenses or suitable reflective optics. Each module has to be mounted and accurately aligned on the dual axis sun tracker.
- Today's CPV technology aims to concentrate the sun anywhere between 300x and lOOOx.
- the geometric concentration factor is defined as the ratio between the area of the collection (Fresnel) lens and the illuminated area of the PV cell .
- these systems are designed around the use of PV cells that are, for example, 10mm x 10mm or 5.5mm x 5.5mm . This implies that for example, a 625x system has to have lenses that are larger than the cell by 25x in each planar direction. With such large lenses it is difficult to focus the sun's rays efficiently without the focal length of the lens being long; typically the z-dimension would be 1.5x to 3x the x-y dimension of the lens.
- This invention seeks to address the shortcomings of the current CPV module designs by:
- a Concentrated Photovoltaic (CPV) cell arrangement comprising an array of photovoltaic cells each connected to a patterned conductive backplane electrically connecting the array of photovoltaic cells together, the patterned conductive backplane comprising a heat sink layer, insulating layer, a conductive layer and a resist layer such that the photovoltaic cell is connected to the conductive layer through exposed regions in the resist layer.
- CPV Concentrated Photovoltaic
- a photovoltaic cell is mounted on a conductive base and wherein the conductive base is connected to the conductive layer of the patterned conductive backplane.
- the conductive layer is a patterned metal interconnect layer.
- the conductive base of a photovoltaic cell is soldered or epoxy bonded to exposed regions on the patterned metal interconnect layer. More preferably, the resist layer is deposited over the conductive layer. In this way, the resist is exposed to define pads for soldering the conductive base of a photovoltaic cell to exposed regions on the patterned metal
- the arrangement of the patterned conductive backplane is preferred as having the heat sink layer affixed to the back of the insulating layer.
- the heat sink layer may feature additional metallic fins.
- the insulating layer comprises a dielectric over the heat sink layer and under the pattered metal interconnect layer.
- a further preferred arrangement includes a secondary optical element mounted over the photovoltaic cell, the secondary optical element being a moulded lens containing an optically transparent lens material disposed over the photovoltaic cell.
- a preferred lens is an aspheric lens with optionally the optically transparent lens material being silicone.
- the lens may be glass.
- the array of photovoltaic cells are arranged to receive light via a primary optical element, eg., a Fresnel lens.
- a method of forming a photovoltaic cell arrangement comprising picking a photovoltaic cell and placing the photovoltaic cell on a patterned conductive backplane electrically connecting an array of photovoltaic cells together, the patterned conductive backplane comprising a heat sink layer, insulating layer, a conductive layer and a resist layer such that the photovoltaic cell is connected to the conductive layer through exposed regions in the resist layer.
- the method includes soldering or epoxy bonding the photovoltaic cell to the exposed regions in the resist layer and melting the solder or epoxy to ensure electrical contact with the conductive layer.
- Figure 1 represents schematic illustrations of point-focus reflective and refractive CPV optical systems
- Figure 2a is cross section of an overmoulded photovoltaic leadless chip package, also known as a receiver (Rx);
- Figure 2b illustrates the way in which the PV cell is connected to the Cu leadframe portion of the Rx
- Figure 3 is a schematic diagram of how the Rx are soldered to the IMS baseplate
- Figure 4 is a schematic diagram showing the functionality of the Fresnel lens parquet and its relation to the Rx arranged on the IMS baseplate;
- Figures 5a-c are schematic diagrams in cross section of the CPV module showing the lens support and details showing the way in which one embodiment of the invention seals the module against water and dust ingress;
- Figures 6a-b are schematic diagrams of a circuit layout that connects the PV cell and reverse biased bypass diode silicon diode in parallel on the IMS backplane and an example of how an array of Rx and bypass diodes could be arranged in parallel strings on the IMS backplane.
- the solder resist layer has been omitted for clarity;
- Figure 7 is a schematic diagram of Rx and bypass diodes together with an IC chip that is capable of performing local maximum power point tracking
- Figure 8 is a schematic diagram of Rx and bypass diodes together with an IC chip that is capable of performing local DC to AC conversion. Again, the solder resist layer has been omitted in both these diagrams.
- the preferred CPV module is made from the following component parts
- a receiver having :
- a PV cell - preferably a high efficiency, III-V multi-junction cell that has an optical aperture of ⁇ 1.5mm x 1.5mm;
- a leadless chip package in which the PV cell is die attached to a metallic leadframe by a suitable electrically conductive solder or epoxy;
- An aspheric silicone lens a secondary optical element (SOE) that is capable of focusing light from an upper primary optical element (POE), usually a Fresnel lens, onto the optically active area of the PV cell.
- POE primary optical element
- the SOE is preferably produced by overmoulding the silicone lens onto the PV cell and leadframe or chip carrier which results in a simplified packaging process that simultaneously protects the PV cell and that is small enough to be assembled onto the CPV module's backplane using high speed pick and place (PnP) tools readily available from the optoelectronics and in particular the high brightness LED industry.
- PnP high speed pick and place
- a metal cored printed circuit board that forms the baseplate of the CPV module and which can be patterned with electronic circuitry that allows series and parallel connections of receivers and bypass, protection diodes.
- Receivers are placed into position on the PCB and subsequently re-flow soldered to allow electrical connections and final positioning.
- a matrix of Fresnel lenses often referred to as a parquet, that is positioned at a predetermined vertical position relative to the PCB backplane
- FIG. 2a illustrates a cross section through a leadless chip package 200 into which has been attached a multi-junction photovoltaic (PV) cell (4).
- PV photovoltaic
- the PV cell (4) has wire bonds (7) attached to its upper surface to complete the electrical circuit and the open package is then placed into an appropriate mould, the inner surface of which has been highly polished in the shape of an aspheric lens (6) to focus incident light onto the optical aperture of the PV cell.
- the mould is then filled with an optically clear silicone, for example, which once cured completely
- Figure 2b shows how the PV cell is mounted and bonded to the two sections of the Cu pads that are an integral part of the package.
- the package is made rigid by the simultaneous moulding of sides and base that separates the two Cu connector pads.
- the entire package is made from a material able to withstand high temperatures whilst also being resistant to damage by intense levels of UV, candidate materials would be, but not limited to, a silicone.
- the sides of the package would be first moulded in a material able to withstand high temperatures and intense levels of UV, such as a liquid crystal polymer (LCP) or even a metal,
- the transparent silicone lens would be overmoulded, simultaneously filling the open cavity, encasing the PV cell and forming the lens to focus the light from the primary optical element - the Fresnel lens or similar.
- Figure 3 shows a cross section of two moulded packages that have been soldered 9 to pads 11 that form part of the electronic circuitry that has been patterned onto a MCPCB 10 or IMS.
- the Rx packages 200 are picked and placed accurately and at high speed onto exposed features on the PCB (10) that are defined by openings in the solder resist layer 12.
- the whole PCB would then be placed into a standard re-flow oven to melt the solder to ensure electrical contact with the circuitry on the PCB and hold the PV cells accurately in place.
- the PV cell 4 can be mounted directly upon pads 11 without the base of a PV cell being first soldered to a metallic leadframe 8.
- the PV cell is soldered to one pad 11 and is wire bonded from its upper surface to an adjacent pad to complete the electrical circuit.
- Figure 4 shows us in cross section how the array of receivers are positioned relative to a parquet 14 of Fresnel lenses whose centres are positioned such that parallel light from the Sun's rays are focussed to a position either at the apex of the silicone lens or just inside its body.
- the lens parquet could be made from PMMA for example or of a thin layer of silicone that is laminated to a suitable glass - a so-called Silicone-on-glass (SOG) lens.
- SOG Silicone-on-glass
- Figure 5a is a cross section of the assembled module where the lens parquet 14 is held in place by a support structure 16.
- the support structure would be typically aluminium; it could however be any material that is rigid enough to support the lens and will not deteriorate over more than twenty years exposure of extremes of temperature a prolonged exposure to UV. It should also be able to withstand high concentrations of sunlight should the tracker malfunction and an "off axis" beam be directed toward the support structure.
- Figures 5b and 5c show detail of how the support structure is attached to the base of the module and the lens parquet.
- a thin, continuous bead of an appropriate silicone adhesive (15) is sandwiched between the parts to be joined and then cured once in place.
- a bead of silicone sealant but other materials such as 3M VHB tape (or equivalent) might also be used.
- Figure 6a shows an example of how the Rx 200 and silicon bypass diode 19 can be connected in parallel on the IMS baseplate with the Rx 200 and bypass diodes reflow soldered to pads 18, 20 opened up on the IMS
- Figure 6b shows one example of the way in which the Rx 200 and silicon bypass diodes are arranged on the IMS baseplate.
- the Rx 200 are arranged in parallel strings so as to optimise the voltage and current being delivered from each individual module to either a central inverter or a micro-inverter that is sited within the module.
- Figure 7 shows an example of how the Rx 200 can be connected on the PCB together with an integrated circuit or set of microchips (21) that can locally optimise the maximum power point tracking (MPPT) of each individual module on a distributed array which will significantly increase the overall power generated compared to an array with just a central inverter.
- MPPT maximum power point tracking
- Figure 8 shows an example of how the Rx 200 can be easily connected to an integrated circuit or chip set (22) that will allow each individual module to convert the local DC to AC without the need of a central, expensive and potentially unreliable inverter.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Agencement cellulaire photovoltaïque concentré (CPV) comprenant un réseau de cellules photovoltaïques, dont chaque cellule est montée sur un fond de panier conducteur à motifs connectant électriquement les cellules photovoltaïques du réseau les unes aux autres, le fond de panier conducteur à motifs comprenant une couche formant puits de chaleur, une couche isolante, une couche conductrice et une couche de photorésine, de sorte que la cellule photovoltaïque est connectée à la couche conductrice par des zones exposées de la couche de photorésine.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1215834.1 | 2012-09-05 | ||
GBGB1215834.1A GB201215834D0 (en) | 2012-09-05 | 2012-09-05 | Concentrated photovoltaic (CPV) cell arrangement, module and method of fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014037721A1 true WO2014037721A1 (fr) | 2014-03-13 |
Family
ID=47136966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2013/052320 WO2014037721A1 (fr) | 2012-09-05 | 2013-09-05 | Agencement cellulaire photovoltaïque concentré (cpv), module et procédé de fabrication |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB201215834D0 (fr) |
WO (1) | WO2014037721A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015202007A (ja) * | 2014-04-10 | 2015-11-12 | 日中東北物産有限会社 | 太陽光発電パネルの設置構造 |
FR3024591A1 (fr) * | 2014-07-29 | 2016-02-05 | Bubendorff | Procede de fabrication d’un panneau photovoltaique |
JP2021506128A (ja) * | 2017-12-07 | 2021-02-18 | コミサリヤ・ア・レネルジ・アトミク・エ・オ・エネルジ・アルテルナテイブ | 光起電力アセンブリ方式を使用した集光型サブモジュールの製造 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080185034A1 (en) * | 2007-02-01 | 2008-08-07 | Corio Ronald P | Fly's Eye Lens Short Focal Length Solar Concentrator |
US20100319773A1 (en) * | 2009-06-22 | 2010-12-23 | Solarmation, Inc. | Optics for Concentrated Photovoltaic Cell |
JP2011138970A (ja) * | 2009-12-29 | 2011-07-14 | Sharp Corp | 集光型太陽電池、集光型太陽電池モジュールおよびその製造方法 |
US20120138145A1 (en) * | 2010-09-30 | 2012-06-07 | International Business Machines Corporation | Structure and design of concentrator solar cell assembly receiver substrate |
-
2012
- 2012-09-05 GB GBGB1215834.1A patent/GB201215834D0/en not_active Ceased
-
2013
- 2013-09-05 WO PCT/GB2013/052320 patent/WO2014037721A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080185034A1 (en) * | 2007-02-01 | 2008-08-07 | Corio Ronald P | Fly's Eye Lens Short Focal Length Solar Concentrator |
US20100319773A1 (en) * | 2009-06-22 | 2010-12-23 | Solarmation, Inc. | Optics for Concentrated Photovoltaic Cell |
JP2011138970A (ja) * | 2009-12-29 | 2011-07-14 | Sharp Corp | 集光型太陽電池、集光型太陽電池モジュールおよびその製造方法 |
US20120291850A1 (en) * | 2009-12-29 | 2012-11-22 | Hiroyuki Juso | Concentrating solar battery, concentrating solar battery module, concentrating solar battery system, method for manufacturing concentrating solar battery, and method for manufacturing concentrating solar battery module |
US20120138145A1 (en) * | 2010-09-30 | 2012-06-07 | International Business Machines Corporation | Structure and design of concentrator solar cell assembly receiver substrate |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015202007A (ja) * | 2014-04-10 | 2015-11-12 | 日中東北物産有限会社 | 太陽光発電パネルの設置構造 |
FR3024591A1 (fr) * | 2014-07-29 | 2016-02-05 | Bubendorff | Procede de fabrication d’un panneau photovoltaique |
JP2021506128A (ja) * | 2017-12-07 | 2021-02-18 | コミサリヤ・ア・レネルジ・アトミク・エ・オ・エネルジ・アルテルナテイブ | 光起電力アセンブリ方式を使用した集光型サブモジュールの製造 |
Also Published As
Publication number | Publication date |
---|---|
GB201215834D0 (en) | 2012-10-24 |
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