WO2014007066A1

WO2014007066A1 - Plasma processing device

Info

Publication number: WO2014007066A1
Application number: PCT/JP2013/066918
Authority: WO
Inventors: 松田　竜一; 吉田　和人
Original assignee: 三菱重工業株式会社
Priority date: 2012-07-05
Filing date: 2013-06-20
Publication date: 2014-01-09
Also published as: TW201409564A; JP2014012875A

Abstract

Provided is a plasma processing device that is easily assembled, is easily maintained, and has uniform gas flow. In this plasma processing device a gas supply means is arranged symmetrical to the center axis (11a) of a processing chamber (11), and an antenna and a support stand are arranged coaxial to the central axis (11a). In addition, an exhaust port (21) is arranged on the bottom surface (17) such that with respect to the central axis (11a), the center (21a) of the exhaust port (21) is offset in the opening direction (OD) of a valve body (22a). A connecting port (24) is arranged on a portion of the bottom surface (17) where the exhaust port (21) does not exist, such that with respect to the central axis (11a), the center (24a) of the connecting port (24) is offset in the closing direction (CD) of the valve body (22a). A middle conduit (31b) between the upper conduit (31a) and the lower conduit (31c) of a power introduction conduit (31) intersects the central axis (11a) and is arranged along the direction of a center line (11b), which is the opening/closing direction of the valve body (22a).

Description

Plasma processing equipment

The present invention relates to a plasma processing apparatus having a support table on which a substrate is placed.

A plasma processing apparatus that mounts a substrate such as a wafer to be processed on a support table provided in the processing container, and uses the plasma generated in the processing container to perform film formation or etching by plasma processing on the substrate It has been known.

US Pat. No. 5,792,272

In the plasma processing apparatus, it is desirable that the structure of the support provided in the processing container satisfies the following conditions. Here, an ICP (Inductively-Coupled-Plasma) type plasma processing apparatus is shown in FIG. 8, and will be described with reference to FIG. In FIG. 8, reference numeral 51 is a processing container, reference numeral 52 is a support base, reference numeral 53 is a substrate, reference numeral 54 is an antenna, reference numeral 55 is an RF incident window, reference numeral 56 is a plasma region, and plasma is an RF incident window 55. And is generated by electromagnetic waves incident from the antenna 54.

(A) There is a columnar plasma region 56 on the upper side of the support base 52 on which the substrate 53 is placed, and the support base 52 and the center axis 51a of the cylindrical processing container 51 in which the inside of the container is columnar are coaxial. A substrate 53 is preferably disposed.
(B) The supply of the source gas to the plasma region 56 is axisymmetric with respect to the central axis 51a, and the flow for exhausting the gas used for the plasma processing is also preferably axially symmetric with respect to the central axis 51a. . In order to adjust the gas flow, the support base 52 is preferably cylindrical.
(C) Piping and cables such as a refrigerant, a heater wire, a temperature sensor, a high voltage wire, and a high frequency power are connected to the support base 52 in order to control the temperature of the substrate 53, electrostatic adsorption, and self-bias application. In addition, it is necessary to provide a power introduction path for guiding these to the outside of the processing container 51. Such a power introduction path is formed inside the support structure (utility introduction pipe) that supports the support base 52. However, since the processing container 51 is evacuated, the processing container 51 side and the support structure (utility introduction pipe) are provided. A seal structure that seals between the inside and the inside is also necessary.

In order to adjust the distance between the support base 52 and the plasma region 56, a drive mechanism for driving the support base 52 is required, and a link mechanism for that purpose needs to be connected within the cylinder of the support base 52. In this case, it is necessary to enlarge the utility introduction tube or add another utility introduction tube in view of space (for example, see the utility introduction tube 62 indicated by a dotted line in FIGS. 9 and 10 described later).

At present, considering the above conditions (a) to (c), the following arrangement examples (1) to (4) can be considered as the arrangement positions of the support structure (utility introduction pipe) and the exhaust port. Here, on the basis of the ICP type plasma processing apparatus shown in FIG. 8, examples of the arrangements (1) to (4) described below are shown in FIGS. 9 to 12, and refer to FIGS. 9 to 12. The configuration in each arrangement example will be described. 9 to 12, the same components as those shown in FIG. 8 are denoted by the same reference numerals, and redundant description is omitted.

(1) Exhaust port: a circular exhaust hole coaxial with the bottom surface of the processing container, support structure: supported from the side surface of the processing container In the plasma processing apparatus shown in FIG. 9, the exhaust port 61 is coaxial with the central axis 51 a on the bottom surface of the processing container 51. The utility introduction pipe 62, which is a formed circular exhaust hole and serves as a support structure, has one cantilever beam that supports the support base 52 from one side of the side surface of the processing vessel 51, or the cantilever beam structure. It has a plurality (for example, see FIG. 5a, 5b, etc. in Patent Document 1). When such a power introduction pipe 62 is adopted, the support base 52 and the power introduction pipe 62 are attached so as to be inserted from the side surface of the processing vessel 51, and these are one large replacement part, which is expensive and heavy. Yes, replacement is not easy. Further, since the exhaust gas is biased by the utility introduction pipe 62, in the case of a viscous flow close to the molecular flow region, the influence of the gas flow appears on the performance of film formation, self-cleaning, and etching, and the plasma processing may become non-uniform.

(2) Exhaust port: non-coaxial circular exhaust hole on the bottom surface of the processing container, support structure: supported from the side surface of the processing container In the plasma processing apparatus shown in FIG. It is a circular exhaust hole formed coaxially, and the utility introduction tube 62 has one cantilever or a plurality of cantilever structures as in the plasma processing apparatus shown in FIG. . If the exhaust port 63 is non-coaxial with the central shaft 51a, the exhaust gas is biased. However, when the pendulum type gate valve 64 is connected to the exhaust port 63, the exhaust port 63 is non-coaxial with the central shaft 51a. By decentering to a predetermined position, the gas flow can be made to approach uniformly. However, when the utility introduction pipe 62 is adopted, as described above, it is expensive and heavy, and replacement is not easy. Further, since the exhaust gas is biased by the utility introduction pipe 62, the gas flow becomes more uneven. As a result, the plasma processing may become non-uniform.

(3) Exhaust port: one exhaust hole on the side surface of the processing container, support structure: supported from the bottom surface of the processing container In the plasma processing apparatus shown in FIG. 11, the exhaust port 65 is one exhaust hole formed on the side surface of the processing container 51. The utility introduction pipe 66 serving as a support structure supports the support base 52 coaxially with the central axis 51a from the bottom surface of the processing vessel 51. When such a power introduction pipe 66 is employed, it is necessary to perform maintenance by lowering the flange on the bottom surface of the processing vessel 51, and the work target is large, and removal is not easy. In addition, it is difficult to provide an exhaust port on the bottom surface of the processing vessel 51, and since one exhaust port 65 is provided on the side surface of the processing vessel 51, exhaust is biased. The influence of the gas flow appears on the film, self-cleaning and etching performance, and the plasma processing may become non-uniform.

(4) Exhaust port: a plurality of exhaust holes on the side surface of the processing container, support structure: supported from the bottom surface of the processing container In the plasma processing apparatus shown in FIG. 12, the exhaust port 67 has a plurality of exhaust holes formed on the side surface of the processing container 51 In the same manner as the plasma processing apparatus shown in FIG. 11, the utility introduction tube 66 supports the support base 52 coaxially with the central axis 51 a from the bottom surface of the processing vessel 51. When such a power introduction pipe 66 is employed, as described above, the object of maintenance is large and removal is not easy. In addition, although it is difficult to provide an exhaust port on the bottom surface of the processing container 51, a plurality of exhaust ports 67 are provided on the side surface of the processing container 51, so if these are arranged symmetrically with respect to the central axis 51 a. The gas flow can be made to approach uniformly. However, in order to arrange the plurality of exhaust ports 67 symmetrically on the side surface of the processing vessel 51, it is necessary to extend the pipe to the corresponding position. As a result, the pipe becomes long and the exhaust conductance deteriorates. End up.

As described above, the configurations of the arrangement examples described with reference to FIGS. 9 to 12 each have advantages and disadvantages. For this reason, it is desired that the arrangements (a) to (c) are satisfied, the assembly property and the maintenance property are good, and the gas flow is uniform.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a plasma processing apparatus with good assemblability and maintainability and a uniform gas flow.

A plasma processing apparatus according to a first invention for solving the above-mentioned problems is
Gas supply means for supplying a desired gas into the inside of the cylindrical processing container;
A circular ring-shaped antenna for supplying electromagnetic waves to the inside of the processing container;
A cylindrical support provided inside the processing container and on which the substrate is placed;
A tubular support structure in which an upper part is connected to a lower part of the support table, and a lower part is connected to a connection port on the bottom surface of the processing container to support the support table and to insert a working force to be used on the support table inward. When,
A pendulum gate valve attached to the circular exhaust port on the bottom surface and having a valve body for opening and closing the exhaust port;
A vacuum pump attached to the lower part of the pendulum gate valve;
In the plasma processing apparatus for controlling the pressure in the processing container using the pendulum type gate valve and the vacuum pump, generating plasma of the gas by electromagnetic waves from the antenna, and performing plasma processing on the substrate,
The gas supply means is arranged axisymmetrically with respect to the central axis of the processing vessel,
The antenna and the support base are arranged coaxially with the central axis of the processing container,
The exhaust port is disposed on the bottom surface such that the center of the exhaust port is decentered in the opening direction of the valve body with respect to the central axis of the processing container,
The connection port is disposed in a portion of the bottom surface where the exhaust port is not provided so that the center of the connection port is decentered in the closing direction of the valve body with respect to the central axis of the processing container,
An intermediate portion between the upper portion and the lower portion of the support structure is arranged in a direction that intersects with a central axis of the processing vessel and along a straight line that is an opening / closing direction of the valve body.

A plasma processing apparatus according to a second invention for solving the above-mentioned problems is as follows.
In the plasma processing apparatus according to the first invention,
The support structure is a crank-shaped tube, and comprises a vertical upper tube, a vertical lower tube, and a horizontal middle tube connecting the upper tube and the lower tube,
The upper tube is connected to the lower surface of the support base and is arranged coaxially with the central axis of the processing vessel,
The middle tube is horizontally disposed in a direction along the straight line,
The lower pipe is connected to the connection port.

A plasma processing apparatus according to a third invention for solving the above-described problem is
In the plasma processing apparatus according to the second invention,
The distance in the height direction from the upper surface of the bottom surface to the lower surface of the middle pipe is H, and the horizontal distance from the end of the exhaust port in the closing direction of the valve body to the end of the middle pipe in the opening direction of the valve body When the distance in the direction is W, the middle tube is arranged at a position satisfying [H ≧ W / 4].

A plasma processing apparatus according to a fourth invention for solving the above-mentioned problems is as follows.
In the plasma processing apparatus according to the first invention,
The support structure is an oblique pipe formed obliquely,
Connect the upper end of the diagonal pipe to the lower surface of the support base,
The middle part of the oblique pipe is arranged along the straight line when viewed from above,
A lower end portion of the oblique pipe is connected to the connection port.

A plasma processing apparatus according to a fifth invention for solving the above-described problems is
In the plasma processing apparatus according to the fourth invention,
The distance in the height direction from the upper surface of the bottom surface to the oblique pipe at the end of the exhaust port in the closing direction of the valve body is H, and from the end of the exhaust port in the closing direction of the valve body, When the distance in the horizontal direction to the end in the opening direction of the valve body is W, the oblique pipe is arranged so as to satisfy [H ≧ W / 4].

A plasma processing apparatus according to a sixth invention for solving the above-described problems is
In the plasma processing apparatus according to the first invention,
The support structure is an L-shaped tube, and comprises a horizontal upper tube and a vertical lower tube connected to the upper tube,
The upper tube is connected to the lower side surface of the support base, and is disposed horizontally in the direction along the straight line,
The lower pipe is connected to the connection port.

A plasma processing apparatus according to a seventh invention for solving the above-described problems is
In the plasma processing apparatus according to the sixth invention,
The distance in the height direction from the upper surface of the bottom surface to the lower surface of the support base is H, and the horizontal distance from the end of the exhaust port in the closing direction of the valve body to the end of the support base in the opening direction of the valve body When the distance in the direction is W, the support base is arranged at a position satisfying [H ≧ W / 4].

According to the present invention, the gas is supplied symmetrically to the central axis of the cylindrical processing vessel, the antenna for generating plasma is arranged coaxially with the central axis, and the cylindrical support base supported by the support structure is centered. Since it is arranged coaxially with the axis, the gas flow used with respect to the central axis is axisymmetrical in the vicinity of the substrate placed on the support base, and the gas flow can be made uniform. In addition, the exhaust port and the support structure to which the pendulum type gate valve is connected below the support base are not arranged coaxially with the central axis of the processing vessel, but intersect with the central axis of the processing vessel, and the pendulum type Since it is arranged in a direction along the straight line that is the opening and closing direction of the valve body of the gate valve, the flow of gas used with respect to the vertical plane including the straight line can be made symmetrical, and the gas flow can be made uniform. . Accordingly, the gas used in the processing container can be exhausted uniformly, and as a result, the plasma processing on the substrate, the processing container, and the like can be performed uniformly, and the performance and reliability of the plasma processing can be improved. .

In addition, since the exhaust port and the support structure are provided on the bottom surface of the processing vessel, not on the side surface, the structure is simpler than the case where the exhaust port and support structure are provided on the side surface, and the exhaust port and support structure are manufactured, assembled and maintained. Becomes easy.

It is a schematic block diagram which shows an example (Example 1) of embodiment of the plasma processing apparatus which concerns on this invention. It is a top view which shows the positional relationship of each structural member in the exhaust port part of the plasma processing apparatus shown in FIG. It is sectional drawing of the attachment part of the power introduction pipe | tube of the plasma processing apparatus shown in FIG. It is a schematic block diagram which shows another example (Example 2) of embodiment of the plasma processing apparatus which concerns on this invention. It is sectional drawing of the attachment part of the power introduction pipe | tube of the plasma processing apparatus shown in FIG. It is a schematic block diagram which shows another example (Example 3) of embodiment of the plasma processing apparatus which concerns on this invention. It is a top view which shows the positional relationship of each structural member in the exhaust port part of the plasma processing apparatus shown in FIG. It is a schematic block diagram explaining the structure of a general plasma processing apparatus. It is a schematic block diagram which shows an example of arrangement | positioning of the support structure (utility introduction pipe | tube) and exhaust port in the plasma processing apparatus shown in FIG. It is a schematic block diagram which shows another example of arrangement | positioning of the support structure (utility introduction pipe | tube) and exhaust port in the plasma processing apparatus shown in FIG. It is a schematic block diagram which shows another example of arrangement | positioning of the support structure (utility introduction pipe | tube) and exhaust port in the plasma processing apparatus shown in FIG. It is a schematic block diagram which shows another example of arrangement | positioning of the support structure (utility introduction pipe | tube) and exhaust port in the plasma processing apparatus shown in FIG.

Embodiments of a plasma processing apparatus according to the present invention will be described with reference to FIGS. The plasma processing apparatus according to the present invention is applicable to a plasma CVD apparatus or a plasma etching apparatus having a support table on which a substrate is placed.

(Example 1)
1 to 3 are diagrams showing a plasma processing apparatus of the present embodiment, FIG. 1 is a schematic configuration diagram showing the plasma processing apparatus of the present embodiment, and FIG. 2 is a plasma processing apparatus shown in FIG. It is a top view which shows the positional relationship of each member in the exhaust port part of an apparatus, FIG. 3 is sectional drawing of the attachment part of the power introduction pipe | tube of the plasma processing apparatus shown in FIG.

As shown in FIG. 1, the plasma processing apparatus 10 A according to the present embodiment includes a cylindrical processing container 11 in which a desired gas is supplied and the internal pressure is controlled in a vacuum region. A cylindrical support base 12 on which a substrate 13 on which a desired plasma treatment is performed is placed, a ceramics disk-like ceiling board 15 that closes an upper opening of the processing container 11, and a ceiling And a plurality of circular ring antennas 14 disposed above (directly above) the plate 15.

Although not shown, a high frequency power source is connected to the antenna 14 via a matching unit. When high-frequency power (for example, 13.56 MHz) is supplied from the high-frequency power source to the antenna 14, the high-frequency electromagnetic wave (RF) is transmitted through the ceiling plate 15 serving as an incident window, and the plasma 16 is generated in the processing container 11. Is generated. This is a configuration of a so-called ICP type plasma generation mechanism.

Although not shown, the processing container 11 is provided with a gas supply mechanism (gas supply means) for supplying a desired gas therein. For example, the central axis of the cylindrical processing container 11 is provided. A plurality of gas nozzles are arranged symmetrically with respect to 11a and gas is supplied so that the gas flow used for plasma processing is axially symmetric with respect to the central axis 11a.

Further, an exhaust port 21 is provided on the bottom surface 17 of the processing vessel 11, and a pendulum type gate valve 22 that controls the pressure inside the processing vessel 11 is attached to the lower portion of the exhaust port 21. A TMP (turbo molecular pump) 23 for exhausting the atmosphere inside the processing vessel 11 is attached to the lower part of the type gate valve 22.

Although details will be described later with reference to FIG. 2, the exhaust port 21 is arranged eccentrically from the central axis 11 a of the processing container 11 in consideration of the characteristics of the pendulum type gate valve 22. In addition, the pendulum type gate valve 22 and the TMP 23 are also arranged eccentrically. On the other hand, the central axis of the cylindrical support base 12 is arranged coaxially with the central axis 11a, and the center of the substrate 13 placed on the upper surface thereof is also arranged coaxially with the central axis 11a. Considering that the generated plasma 16 has a cylindrical shape coaxial with the central axis 11a, the centers of the circular ring antenna 14 and the disk-shaped ceiling plate 15 are also arranged coaxially with the central axis 11a. ing. That is, the plasma generation mechanism is preferably an ICP type using a circular ring antenna.

In the above-described configuration, if a power introduction tube serving as a support structure for the support base 12 is provided on the side wall of the processing container 11, as described with reference to FIGS. The uniformity of the flow will also deteriorate. On the other hand, since the exhaust port 21 is provided in the bottom surface 17 of the processing container 11, it is difficult to arrange the power introduction pipe coaxially with the central axis 11a as shown in FIGS.

Therefore, in this embodiment, as the support structure of the support table 12, the utility introduction pipe 31 from the lower part of the support table 12 to the bottom surface 17 of the processing container 11 is bent in a crank shape. More specifically, the upper tube 31a, which is a portion immediately below the support base 12, is arranged vertically coaxially with the central axis 11a, and the lower tube 31c, which is a portion connected to the bottom surface 17, is arranged in an eccentric manner. The middle tube 31b, which is vertically disposed on the portion of the bottom surface 17 (the connection port 24) without 21 and connects between the upper tube 31a and the lower tube 31c, is disposed horizontally. The crank-shaped power introduction pipe 31 can be easily configured by combining a commercially available elbow pipe and a straight pipe.

Pipes and cables (utility) such as a refrigerant, a heater wire, a temperature sensor, a high-voltage wire, and a high-frequency power are inserted into the utility introduction tube 31 for temperature control of the substrate 13, electrostatic adsorption, and self-bias application. The heater is connected to the heater and electrodes inside the support base 12. Such a power introduction pipe 31 may be formed in a crank shape by connecting a plurality of pipes such as a cylinder and a square cylinder.

As shown in FIG. 3, a flange 31 d is provided on the outer periphery of the lower pipe 31 c of the utility introduction pipe 31, and is disposed on the upper surface of the bottom surface 17 via the O-ring 32. The structure is fixed to the bottom surface 17 by a plurality of inserted bolts 33. The connecting portion between the lower pipe 31c and the flange 31d is sealed by welding or the like over the entire circumference, and the bolt hole for the bolt 33 on the inner circumference of the O-ring 32 is formed without penetrating the flange 31d. . With such a structure, the inside of the processing container 11 is sealed from the atmosphere side. Further, since the inside of the utility introduction pipe 31 is also on the atmosphere side, maintenance of this portion is facilitated. In addition, since the utility introduction pipe 31 is inserted into the connection port 24 of the bottom surface 17 from above and the bolt 33 is inserted into the bolt hole of the flange 31d from below the bottom surface 17, an operation of using a tool in a narrow region in the processing container 11 is performed. There is no need, and the assembly work becomes easy. Further, the rotation direction can be positioned at the position of the bolt hole of the flange 31d. Note that a positioning pin or the like may be provided on the flange 31d or the bottom plate 17 in order to prevent an assembly error and perform installation with high accuracy.

Furthermore, the positional relationship between the constituent members in the exhaust port 21 will be described with reference to FIG. 2 together with FIG. Here, a straight line that intersects the central axis 11a perpendicularly and that opens and closes the valve element 22a of the pendulum gate valve 22 is called a center line 11b, and the following description will be given. The movement direction of the circular valve body 22a is strictly an arc due to the structure of the pendulum type gate valve 22, but can be regarded as a substantially straight line. Therefore, here, the movement direction of the valve body 22a is a straight line. Will be described.

The exhaust port 21 is arranged eccentric from the central axis 11a of the processing container 11 in consideration of the characteristics of the pendulum type gate valve 22. Specifically, the valve body 22a is offset in the opening direction OD so that the area center Mc of the opening region formed by the exhaust port 21 and the valve body 22a of the pendulum gate valve 22 coincides with the center axis 11a of the processing vessel 11. The exhaust port 21 is arranged in mind. Therefore, the opening center 21a of the exhaust port 21 itself is decentered in the opening direction OD on the center line 11b with respect to the central axis 11a of the processing container 11.

The opening area of the pendulum gate valve 22 naturally changes depending on the opening ratio, but in this embodiment, the central value of the recommended use value (10% to 50%) of the opening ratio in the pendulum gate valve 22 is 30%. The area center Mc of the crescent-shaped opening area at that time is obtained on the basis of the opening area, and the exhaust port 21 is arranged eccentrically so that the area center Mc coincides with the central axis 11a.

Further, the upper pipe 31a of the utility introduction pipe 31 is arranged coaxially with the central axis 11a together with the support base 12 immediately above. Further, the lower pipe 31c of the utility introduction pipe 31 is arranged at a portion of the bottom surface 17 (connecting port 24) where there is no exhaust port 21 arranged eccentrically, and its center 24a is closed on the center line 11b in the closing direction CD. It is decentered from the central axis 11a (in the direction opposite to the opening direction OD). And the middle pipe | tube 31b which connects between the upper pipe | tube 31a and the lower pipe | tube 31c is horizontally arrange | positioned in the direction in alignment with the center line 11b.

As described above, inside the processing container 11, the cylindrical support base 12 and the upper pipe 31 a of the cylindrical power introduction pipe 31 are arranged coaxially with the central axis 11 a of the processing container 11. A gas used for processing is supplied into the processing vessel 11 symmetrically with respect to the central axis 11a, and high-frequency electromagnetic waves are supplied from an antenna 14 arranged coaxially with the central axis 11a, so that cylindrical plasma is supplied. 16 is generated, and the gas used for the processing flows around the support base 12 and the upper pipe 31a of the power introduction pipe 31 so as to be uniform with respect to the central axis 11a. Therefore, as compared with the case where it is attached to the side surface of the processing container as shown in FIGS.

On the other hand, below the support 12, the middle pipe 31 b and the lower pipe 31 c of the utility introduction pipe 31 are not arranged coaxially with the central axis 11 a of the processing vessel 11, but the middle pipe 31 b is in a direction along the center line 11 b. Is arranged. Further, the exhaust port 21 is not arranged coaxially with the central axis 11a of the processing vessel 11, but the opening center 21a is arranged eccentrically with respect to the central axis 11a on the center line 11b in the opening direction OD. ing. In this case, when viewed from above the processing container 11, as shown in FIG. 2, a part of the crescent-shaped opening region formed by the exhaust port 21 and the valve body 22a is hidden by the middle tube 31b. And even if the valve element 22a moves and the size of the crescent-shaped opening region changes, the shape of the opening region that is not hidden by the middle tube 31b is axisymmetric with respect to the middle tube 31b (center line 11b). Will change. Therefore, considering the vertical plane including the center line 11b (hereinafter referred to as the central vertical plane), the gas used for the processing is uniform in the plane of the middle pipe 31b so as to be symmetrical with respect to the central vertical plane. It will flow around.

Here, considering the influence on the exhaust conductance, it is necessary to consider the height position of the middle pipe 31b of the utility introduction pipe 31 arranged above the exhaust port 21. The distance in the height direction between the upper surface of the bottom surface 17 and the position of the lower surface of the middle tube 31b disposed horizontally is H, and the end of the exhaust port 21 in the closing direction CD and the opening direction of the middle tube 31b of the utility introduction tube 31 When the horizontal distance from the end of the OD is W, it is desirable that the lower surface of the middle pipe 31b of the utility introduction pipe 31 is positioned at a height position where [H ≧ W / 4].

The above arrangement is for the following reasons. Considering the case where the valve body 22a is moved to the fully open position (the position of the one-dot chain line in FIG. 2) and the exhaust port 21 is fully open, the diameter D of the exhaust port 21 is used [H ≧ D / 4]. However, the exhaust port 21 is not fully opened during exhaust control during actual plasma processing. Normally, it is used at an opening ratio of the recommended use value (10% to 50%) described above, so it is better to consider the size of the middle pipe 31b of the utility introduction pipe 31 that may affect the exhaust conductance. For this reason, [H ≧ W / 4] is obtained by using the horizontal distance W between the end portion in the closing direction CD of the exhaust port 21 and the end portion in the opening direction OD of the middle tube 31b of the power introduction tube 31. The height position.

By disposing the middle pipe 31b of the utility introduction pipe 31 at such a height position H, the gas used for processing can be exhausted without affecting the exhaust conductance.

The effect of the above configuration is noticeable when plasma processing is performed at a relatively high vacuum pressure. For example, plasma cleaning in a plasma CVD apparatus is performed at a relatively high vacuum pressure. In particular, in the configuration shown in FIGS. 9 to 11, there is a bias in plasma cleaning, and in order to perform a predetermined cleaning, excessive gas is consumed or a part of the cleaning is performed, resulting in plasma damage. May occur. On the other hand, in this embodiment, uniform plasma cleaning (plasma processing) is performed on the processing container 11 and the support base 12 by using the above-described configuration. As a result, useless gas usage and plasma damage can be reduced, reducing the frequency of maintenance and extending the life of parts. In particular, when [H = W / 4], the height position H of the lower surface of the middle pipe 31b of the utility introduction pipe 31 is the shortest height position that does not affect the conductance of the gas flow at the exhaust port 21, There is no need to raise the height of the support 12 or the processing container 11 more than necessary.

Further, as shown in FIG. 1, the pendulum type gate valve 22 and the TMP 23 are also arranged eccentrically together with the exhaust port 21, so that the pendulum type gate valve 22, Since there is no TMP 23, a space is created, access to this part is facilitated, and utility wiring and piping construction are facilitated. In particular, the pendulum gate valve 22 has a valve body storage portion 22b for storing the valve body 22a, and an installation space for the valve body storage portion 22b is necessary. However, the pendulum type gate valve 22 is biased to the opening direction OD. Since the valve body storage portion 22b is also moved and arranged in an eccentric direction, a space is created below the lower pipe 31c of the utility introduction pipe 31. Therefore, assembly and maintenance of the utility introduction pipe 31 are facilitated, and the assemblability and maintainability can be improved. Further, as can be seen from FIG. 1, the valve body storage portion 22b of the pendulum type gate valve 22 arranged eccentrically is arranged so as to protrude outward from the side surface of the apparatus. Maintenance such as replacement becomes easy.

For example, when assembling the inside of the processing container 11, first, the support base 12 is attached to a crank-shaped power introduction pipe 31 that is integrally manufactured in advance. At this time, the working force (pipe, cable, etc.) on the support base 12 side is inserted from above into the upper tube 31a of the power introduction tube 31 and pulled out from the lower tube 31c via the middle tube 31b. The support 12 is fixed to the upper tube 31a. That is, the support base 12 and its usage force and the usage introduction pipe 31 are in an assembled state.

Next, as described with reference to FIG. 3, the power introduction pipe 31 is disposed via the O-ring 32 at the position of the connection port 24 on the bottom surface 17 of the processing container 11, and a plurality of bolts 33 are formed from the bottom surface side of the bottom surface 17. And the lower pipe 31c of the utility introduction pipe 31 is temporarily fixed to the bottom surface 17. At this time, the working force of the support base 12 is drawn from the connection port 24 to below the bottom surface 17.

Next, the arrangement is adjusted so that the support 12 and the upper pipe 31a of the utility introduction pipe 31 are coaxial with the central axis 11a of the processing vessel 11, and the middle pipe 31b of the utility introduction pipe 31 is arranged horizontal. After these adjustments, the bolts 33 are finally fixed. The utility introduction pipe 31 can be fixed to the bottom surface 17 from the outside of the processing container 11 and the operation is easy.

Finally, the power on the support base 12 side and the power on the apparatus side extended to the vicinity of the connection port 24 are connected.

As described above, the assembly of the support base 12 and the utility introduction pipe 31 is facilitated as compared with the case where they are attached to the side surface of the processing container as shown in FIGS.

Further, when removing the support base 12 and the utility introduction pipe 31 during maintenance, the support stage 12 and the utility introduction pipe 31 may be removed by a procedure reverse to the above-described procedure, so that the maintenance becomes easy. In addition, as a consumable item (replacement part) of the support base 12, there is an electrostatic chuck attached to the upper part of the support base 12, but such a lightweight part can be replaced from above the processing container 11. it can.

As described above, in the plasma processing apparatus 10A of the present embodiment, the gas flow to be used is axially symmetric with respect to the central axis 11a up to the support base 12 and the upper pipe 31a of the utility introduction pipe 31. Further, below the upper pipe 31a, the gas flow used is symmetrical with respect to the central vertical plane, the gas flow is uniform, and the gas used in the processing vessel 11 is exhausted uniformly. As a result, it is possible to uniformly perform the plasma processing on the substrate 13 and the processing container 11.

Further, since the exhaust port 21 and the utility introduction pipe 31 are provided not on the side surface of the processing vessel 11 but on the bottom surface 17 thereof, the structure becomes simpler than the case where the exhaust port and the utility introduction tube 31 are provided on the side surface. The introduction pipe 31 can be easily manufactured, assembled and maintained.

(Example 2)
4 and 5 are diagrams showing the plasma processing apparatus of the present embodiment, FIG. 4 is a schematic configuration diagram showing the plasma processing apparatus of the present embodiment, and FIG. 5 is the plasma processing shown in FIG. It is sectional drawing of the attachment part of the power introduction pipe | tube of an apparatus.

As shown in FIG. 4, the plasma processing apparatus 10 B according to the present embodiment is different from the utility introduction pipe 31 described in the first embodiment in the configuration of the utility introduction pipe 34. The configuration is the same as the plasma processing apparatus 10 A described in the first embodiment. Therefore, here, the same reference numerals are used for the equivalent components, and the description of the overlapping description is omitted.

Also in the present embodiment, the utility introduction pipe 34 is provided as a support structure of the support base 12, but the shape is different from the utility introduction pipe 31 described in the first embodiment, and treatment is performed from the lower part of the support base 12. The utility introduction pipe 34 up to the bottom surface 17 of the container 11 is constituted by an inclined oblique pipe. More specifically, the upper end portion 34a of the power introduction pipe 34 connected to the lower surface of the support base 12 is centered in the same manner as the upper pipe 31a of the power introduction pipe 31 as shown in FIG. Although it arrange | positions coaxially with the axis | shaft 11a, it is not necessary to limit to this arrangement position. On the other hand, the lower end portion 34c connected to the bottom surface 17 is disposed at a portion (connecting port 24) of the bottom surface 17 where there is no exhaust port 21 arranged eccentrically, and an intermediate portion connecting between the upper end portion 34a and the lower end portion 34c. 34b is arranged diagonally.

The utility (pipe, cable, etc.) is inserted into the utility introduction pipe 34 as in the first embodiment. In the case of the present embodiment, unlike the crank-shaped power introduction pipe 31, the power introduction pipe 34 is a substantially straight pipe, and the inside can be seen through. Insertion of utility becomes easier. Further, the length of the utility introduction pipe 34 and the length of the insertion force to be inserted can be shortened.

As shown in FIG. 5, a flange 34 d is provided on the outer periphery of the lower end 34 c of the utility introduction pipe 34, and is disposed on the upper surface of the bottom surface 17 via the O-ring 32. The structure is fixed to the bottom surface 17 by a plurality of inserted bolts 33. With such a structure, the inside of the processing container 11 is sealed from the atmosphere side. Further, since the inside of the utility introduction pipe 34 is also on the atmosphere side, maintenance of this portion is facilitated. In addition, the utility introduction pipe 34 may include all of the inclined pipes including the lower end part 34c. However, considering the formation of the flange 34d, the lower end part 34c is arranged with respect to the bottom surface 17 as shown in FIG. A configuration in which the lower end portion 34c and the intermediate portion 34b are connected to each other is preferable. In that case, for example, a plurality of tubes such as cylinders and square tubes may be connected.

Regarding the positional relationship between the constituent members in the portion of the exhaust port 21, the arrangement position of the exhaust port 21 is the same as in the first embodiment. The arrangement position of the utility introduction pipe 34 is substantially the same as that of the first embodiment although the shape is different from that of the utility introduction pipe 31. Specifically, the upper end portion 34a of the utility introduction pipe 34 is disposed coaxially with the central axis 11a together with the support base 12 immediately above the upper end portion 34a. The lower end 34c is arranged at a portion of the bottom surface 17 (connecting port 24) where there is no exhaust port 21 arranged eccentrically, and its center 24a extends from the central axis 11a in the closing direction CD on the center line 11b. It is arranged eccentrically. The intermediate portion 34b connecting the upper end portion 34a and the lower end portion 34c is disposed obliquely when viewed from the side, but is disposed in a direction along the center line 11b when viewed from above.

As described above, inside the processing container 11, the cylindrical support 12 is disposed coaxially with the central axis 11 a of the processing container 11. A gas used for processing is supplied into the processing vessel 11 symmetrically with respect to the central axis 11a, and high-frequency electromagnetic waves are supplied from an antenna 14 arranged coaxially with the central axis 11a, so that cylindrical plasma is supplied. 16 is generated, and the gas used for the processing flows around the support base 12 so as to be uniform with respect to the central axis 11a. Therefore, as compared with the case where it is attached to the side surface of the processing container as shown in FIGS.

On the other hand, below the support 12, the intermediate part 34 b and the lower end part 34 c of the utility introduction pipe 34 are not arranged coaxially with the central axis 11 a of the processing container 11, but the intermediate part 34 b is a center line as viewed from above. It is arranged along 11b. Further, although the exhaust port 21 is not arranged coaxially with the central axis 11a of the processing vessel 11, the opening center 21a is located on the central line 11b with respect to the central axis 11a as described in FIG. It is arranged eccentrically in the opening direction OD. Therefore, also in the case of the present embodiment, when viewed from above the processing container 11, as described in FIG. 2, a part of the crescent-shaped opening region formed by the exhaust port 21 and the valve body 22a is hidden by the intermediate portion 34b. Therefore, the shape of the opening region that is not hidden by the intermediate portion 34b changes axisymmetrically with respect to the intermediate portion 34b (center line 11b). Therefore, the gas used for the treatment flows around the intermediate portion 34b so as to be uniform in plane symmetry with respect to the central vertical plane.

Also in this embodiment, in consideration of the influence on the exhaust conductance, it is necessary to consider the height position of the intermediate portion 34b of the utility introduction pipe 34 disposed above the exhaust port 21. In the present embodiment, since the intermediate portion 34b is inclined, the distance in the height direction between the upper surface of the bottom surface 17 and the position of the lower surface of the intermediate portion 34b at the end portion in the closing direction CD of the exhaust port 21 is H. The horizontal distance between the end of the exhaust port 21 in the closing direction CD and the end of the intermediate portion 34b in the opening direction OD is W. And it is desirable to arrange | position so that the lower surface of the intermediate part 34b may be located in the edge part of the closing direction CD of the exhaust port 21 so that it may become a height position used as [H> = W / 4].

As described in the first embodiment, since it is normally used at the opening ratio of the recommended use value (10% to 50%) described above, the arrangement of this embodiment may also affect the exhaust conductance. The size of the intermediate portion 34b of the utility introduction pipe 34 is taken into account, and therefore, the horizontal direction between the end portion in the closing direction CD of the exhaust port 21 and the end portion in the opening direction OD of the intermediate portion 34b of the utility introduction tube 34 is considered. The distance W is used as a height position where [H ≧ W / 4].

By disposing the utility introduction pipe 34 at such a height position H, the gas used for processing can be exhausted without affecting the exhaust conductance. In the case of the present embodiment, even if the height position H is the same as that of the first embodiment, the distance between the exhaust port 21 and the support base 12 is shortened, so that the overall height of the processing container 11 can be reduced. it can.

With the above configuration, the plasma processing is performed uniformly on the processing vessel 11 and the support base 12 as in the first embodiment. As a result, useless gas usage and plasma damage can be reduced, reducing the frequency of maintenance and extending the life of parts.

The procedures for assembling and maintaining the inside of the processing container 11 are the same as the procedures described in the first embodiment. However, since the utility introduction pipe 34 is a straight pipe or a substantially straight pipe, in particular, the usage force on the support base 12 side ( (Piping, cables, etc.) can be easily inserted. Further, since the utility introduction pipe 34 has a simpler configuration than the utility introduction pipe 31, its assembly and maintenance are facilitated, and its assemblability and maintenance can be improved.

As described above, in the plasma processing apparatus 10B of the present embodiment, the gas flow to be used is axisymmetric with respect to the central axis 11a up to the lower end of the support base 12, and the gas flow is uniform. Below the lower end of the support base 12, the gas flow used is plane-symmetric with respect to the central vertical plane, the gas flow is uniform, and the gas used in the processing vessel 11 can be exhausted uniformly. As a result, the plasma processing for the substrate 13 and the processing container 11 can be performed uniformly.

Further, since the exhaust port 21 and the utility introduction pipe 34 are provided not on the side surface of the processing vessel 11 but on the bottom surface 17 thereof, the structure becomes simpler than the case where the exhaust port and the utility introduction tube 34 are provided on the side surface. Production, assembly and maintenance of the introduction pipe 34 are facilitated.

(Example 3)
6 and 7 are diagrams showing the plasma processing apparatus of the present embodiment, FIG. 6 is a schematic configuration diagram showing the plasma processing apparatus of the present embodiment, and FIG. 7 is the plasma processing shown in FIG. It is a top view which shows the positional relationship of each member in the exhaust-portion part of an apparatus.

As for the plasma processing apparatus 10C of the present embodiment, as shown in FIG. 6, the configuration of the power introduction tube 35 is different from that of the power introduction tube 31 described in the first embodiment. The configuration is the same as the plasma processing apparatus 10 A described in the first embodiment. FIG. 7 also has the same configuration as that of the plasma processing apparatus 10 A described in the first embodiment except for the utility introduction pipe 35. Accordingly, here, the same reference numerals are used for the same components, and the description of the overlapping description is omitted.

Also in the present embodiment, the utility introduction pipe 35 is provided as a support structure of the support base 12, but the shape is different from the utility introduction pipe 31 described in the first embodiment, and from the lower side surface of the support base 12. The utility introduction tube 35 up to the bottom surface 17 of the processing container 11 is bent into an L shape. More specifically, the upper tube 35a connected to the lower side surface of the support base 12 is disposed horizontally along the center line 11b shown in FIG. 7, and the lower tube 35b which is a portion connected to the bottom surface 17 is It is arranged vertically in the portion of the bottom surface 17 (connection port 24) where there is no exhaust port 21 arranged eccentrically. In addition, the position connected to the lower side surface of the support base 12 of the upper pipe 35a is preferably as close to the lower end of the support base 12 as possible.

The utility (pipe, cable, etc.) is inserted into the utility introduction pipe 35 as in the first embodiment. In the case of the present embodiment, it is bent in the same manner as the crank-shaped power introduction tube 31, but since there is only one bent portion of the power introduction tube 35, the amount of bending the utility force is small inside the power introduction tube 35. Thus, the utility can be inserted more easily. Such a power introduction pipe 35 may be formed in an L shape by connecting a plurality of pipes such as a cylinder and a square cylinder.

And although illustration is abbreviate | omitted, as demonstrated in FIG. 3, the flange is provided in the outer periphery of the lower pipe 35b of the utility introduction pipe 35, and it arrange | positions through the O-ring 32 on the upper surface of the bottom face 17, This is a structure that is fixed to the bottom surface 17 by a plurality of bolts 33 inserted from the bottom surface of 17. With such a structure, the inside of the processing container 11 is sealed from the atmosphere side. Further, since the inside of the utility introduction pipe 35 is also on the atmosphere side, maintenance of this portion is facilitated.

Regarding the positional relationship between the constituent members in the exhaust port 21 part, the arrangement position of the exhaust port 21 is the same as in the first embodiment. On the other hand, the arrangement position of the utility introduction pipe 35 is such that the upper pipe 35a is connected to the lower side surface of the support 12 and is arranged horizontally, and the arrangement direction thereof is the direction along the center line 11b shown in FIG. It has become. The lower pipe 35b is arranged at a portion of the bottom surface 17 (connection port 24) where there is no exhaust port 21 arranged eccentrically, and its center 24a is centered on the center line 11b in the closing direction CD in the center axis 11a. It is arranged eccentrically. Note that the upper tube 35a may be configured by an oblique pipe as in the intermediate portion 34b of the second embodiment as long as the arrangement direction is along the center line 11b when viewed from above.

As described above, inside the processing container 11, the cylindrical support 12 is disposed coaxially with the central axis 11 a of the processing container 11. A gas used for processing is supplied into the processing vessel 11 symmetrically with respect to the central axis 11a, and high-frequency electromagnetic waves are supplied from an antenna 14 arranged coaxially with the central axis 11a, so that cylindrical plasma is supplied. 16 is generated, and the gas used for the processing flows around the support base 12 so as to be uniform with respect to the central axis 11a. Therefore, in the support base 12 above the upper end portion UL of the upper pipe 35a of the utility introduction pipe 35, the gas flow in the vicinity of the substrate 13 is made smaller than when the support base 12 is attached to the side surface of the processing container as shown in FIGS. It is possible to uniformly perform the plasma processing on the substrate 13.

On the other hand, below the upper end portion UL, the upper pipe 35a and the lower pipe 35b of the utility introduction pipe 35 are not arranged coaxially with the central axis 11a of the processing container 11, but in this embodiment, the upper pipe 35a is Since the gas is disposed horizontally in the direction along the center line 11b, the gas used for processing flows around the upper tube 35a so as to be uniform in plane symmetry with respect to the central vertical plane.

Further, although the exhaust port 21 is not arranged coaxially with the central axis 11a of the processing vessel 11, the opening center 21a is located on the central line 11b with respect to the central axis 11a as described in FIG. It is arranged eccentrically in the opening direction OD. Here, the case of the present embodiment will be described with reference to FIG. In the case of the present embodiment, when viewed from above the processing container 11, a part of the crescent-shaped opening region formed by the exhaust port 21 and the valve body 22a is hidden by the support base 12 and the upper tube 35a. The shape of the opening region that is not hidden by the table 12 and the upper tube 35a changes symmetrically with respect to the center line 11b. Therefore, the gas used for the treatment flows around the support base 12 and the upper tube 35a so as to be uniform in plane symmetry with respect to the central vertical plane.

Also in this embodiment, in consideration of the influence on the exhaust conductance, it is necessary to consider the height position of the support base 12 disposed above the exhaust port 21. In the present embodiment, the distance in the height direction between the upper surface of the bottom surface 17 and the position of the lower surface of the support base 12 is H, the end of the exhaust port 21 in the closing direction CD and the end of the support base 12 in the opening direction OD. When the distance in the horizontal direction is W, it is desirable that the lower surface of the support base 12 be positioned at a height position satisfying [H ≧ W / 4].

As described in the first embodiment, since it is normally used at the opening ratio of the recommended use value (10% to 50%) described above, the arrangement of this embodiment may also affect the exhaust conductance. The size of the support base 12 is taken into account, and therefore the horizontal distance W between the end portion of the exhaust port 21 in the closing direction CD and the end portion of the support base 12 in the opening direction OD is used, [H ≧ W / 4].

By arranging the support base 12 at such a height position H, the gas used for the processing can be exhausted without affecting the exhaust conductance. In the case of the present embodiment, even if the height position H is the same as that of the first embodiment, there is no upper tube 31b as shown in the first embodiment, so that the height of the entire processing container 11 can be reduced. it can.

The procedures for assembling and maintaining the inside of the processing container 11 are the same as those described in the first embodiment. However, since the utility introduction pipe 35 is L-shaped, the utility (pipe, cable, etc.) on the support base 12 side. Is easier to insert than in the first embodiment. Further, since the utility introduction pipe 35 has a simpler configuration than the utility introduction pipe 31, its assembly and maintenance are facilitated, and its assembly and maintenance can be improved.

As described above, in the plasma processing apparatus 10C of the present embodiment, the gas flow to be used is made symmetrical with respect to the central axis 11a in the support base 12 above the upper end portion UL, and the gas flow is made uniform. In addition, in the support base 12 below the upper end UL, the gas flow used is symmetrical with respect to the central vertical plane, the gas flow is uniform, and the gas used in the processing vessel 11 is exhausted uniformly. As a result, it is possible to uniformly perform the plasma processing on the substrate 13 and the processing container 11.

Further, since the exhaust port 21 and the utility introduction pipe 35 are provided not on the side surface of the processing vessel 11 but on the bottom surface 17 thereof, the structure becomes simpler than the case where the exhaust port and the utility introduction tube are provided on the side surface. Production, assembly, and maintenance of the introduction pipe 35 are facilitated.

The present invention is applied to a plasma processing apparatus (plasma CVD apparatus or plasma etching apparatus) having a support table on which a substrate is placed, and is particularly suitable for an ICP type plasma processing apparatus.

10A, 10B, 10C Plasma processing apparatus 11 Processing vessel 12 Support base 13 Substrate 14 Antenna 17 Bottom surface 21 Exhaust port 22 Pendulum type gate valve 23 Vacuum pump (TMP)
31, 34, 35 Power introduction pipe

Claims

Gas supply means for supplying a desired gas into the inside of the cylindrical processing container;
A circular ring-shaped antenna for supplying electromagnetic waves to the inside of the processing container;
A cylindrical support provided inside the processing container and on which the substrate is placed;
A tubular support structure in which an upper part is connected to a lower part of the support table, and a lower part is connected to a connection port on the bottom surface of the processing container to support the support table and to insert a working force to be used on the support table inward. When,
A pendulum gate valve attached to the circular exhaust port on the bottom surface and having a valve body for opening and closing the exhaust port;
A vacuum pump attached to the lower part of the pendulum gate valve;
In the plasma processing apparatus for controlling the pressure in the processing container using the pendulum type gate valve and the vacuum pump, generating plasma of the gas by electromagnetic waves from the antenna, and performing plasma processing on the substrate,
The gas supply means is arranged axisymmetrically with respect to the central axis of the processing vessel,
The antenna and the support base are arranged coaxially with the central axis of the processing container,
The exhaust port is disposed on the bottom surface such that the center of the exhaust port is decentered in the opening direction of the valve body with respect to the central axis of the processing container,
The connection port is disposed in a portion of the bottom surface where the exhaust port is not provided so that the center of the connection port is decentered in the closing direction of the valve body with respect to the central axis of the processing container,
An intermediate portion between the upper portion and the lower portion of the support structure is disposed in a direction that intersects a central axis of the processing vessel and extends along a straight line that is an opening / closing direction of the valve body. apparatus.
The plasma processing apparatus according to claim 1,
The support structure is a crank-shaped tube, and comprises a vertical upper tube, a vertical lower tube, and a horizontal middle tube connecting the upper tube and the lower tube,
The upper tube is connected to the lower surface of the support base and is arranged coaxially with the central axis of the processing vessel,
The middle tube is horizontally disposed in a direction along the straight line,
A plasma processing apparatus, wherein the lower tube is connected to the connection port.
The plasma processing apparatus according to claim 2, wherein
The distance in the height direction from the upper surface of the bottom surface to the lower surface of the middle pipe is H, and the horizontal distance from the end of the exhaust port in the closing direction of the valve body to the end of the middle pipe in the opening direction of the valve body When the distance in the direction is W, the plasma processing apparatus is characterized in that the intermediate tube is disposed at a position satisfying [H ≧ W / 4].
The plasma processing apparatus according to claim 1,
The support structure is an oblique pipe formed obliquely,
Connect the upper end of the diagonal pipe to the lower surface of the support base,
The middle part of the oblique pipe is arranged along the straight line when viewed from above,
A plasma processing apparatus, wherein a lower end portion of the oblique pipe is connected to the connection port.
The plasma processing apparatus according to claim 4, wherein
The distance in the height direction from the upper surface of the bottom surface to the oblique pipe at the end of the exhaust port in the closing direction of the valve body is H, and from the end of the exhaust port in the closing direction of the valve body, The plasma processing apparatus, wherein the diagonal pipe is arranged so as to satisfy [H ≧ W / 4], where W is a horizontal distance to an end of the valve body in the opening direction.
The plasma processing apparatus according to claim 1,
The support structure is an L-shaped tube, and comprises a horizontal upper tube and a vertical lower tube connected to the upper tube,
The upper tube is connected to the lower side surface of the support base, and is disposed horizontally in the direction along the straight line,
A plasma processing apparatus, wherein the lower tube is connected to the connection port.
The plasma processing apparatus according to claim 6, wherein
The distance in the height direction from the upper surface of the bottom surface to the lower surface of the support base is H, and the horizontal distance from the end of the exhaust port in the closing direction of the valve body to the end of the support base in the opening direction of the valve body A plasma processing apparatus, wherein the support is disposed at a position satisfying [H ≧ W / 4], where W is a distance in the direction.