WO2014001071A3 - Lithographic apparatus - Google Patents

Lithographic apparatus Download PDF

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Publication number
WO2014001071A3
WO2014001071A3 PCT/EP2013/061941 EP2013061941W WO2014001071A3 WO 2014001071 A3 WO2014001071 A3 WO 2014001071A3 EP 2013061941 W EP2013061941 W EP 2013061941W WO 2014001071 A3 WO2014001071 A3 WO 2014001071A3
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
screen
infrared radiation
hotspot
dynamic range
Prior art date
Application number
PCT/EP2013/061941
Other languages
French (fr)
Other versions
WO2014001071A2 (en
Inventor
Niek KLEEMANS
Nicolaas Van Asten
Aleksey Kolesnychenko
Nick VAN AERLE
Gerardus Baas
Markus Eurlings
Rolf BEIJSENS
Original Assignee
Asml Netherlands B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Publication of WO2014001071A2 publication Critical patent/WO2014001071A2/en
Publication of WO2014001071A3 publication Critical patent/WO2014001071A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/425—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application in illumination systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4294—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect in multispectral systems, e.g. UV and visible
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

A collector module (SO) is disclosed comprising: a collector (14) for collecting radiation generated by a radiation generating plasma (10), and for directing at least a portion of the generated radiation to a focal point (16); a structure (30) upstream of the focal point and extending at least partially around an expected position of a beam comprising the at least a portion of the collected radiation (B); a diffractive element being arranged to diffract infrared radiation that is reflected from the plasma formation location. When the plasma formation location is at an intended location, m = +1 diffracted infrared radiation (32) is directed towards a first region of the structure. At m = -1 diffracted infrared radiation is directed towards a second region of the structure. Also disclosed is an infra-red detector with increased dynamic range obtained by providing a screen for forming an image of a hotspot and a camera directed on to the screen. The dynamic range of the detector is improved either by heating the screen such that a low intensity hotspot is raised above a camera threshold, or by dividing the image into multiple images of differing intensities.
PCT/EP2013/061941 2012-06-26 2013-06-11 Lithographic apparatus WO2014001071A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261664440P 2012-06-26 2012-06-26
US61/664,440 2012-06-26
US201261698869P 2012-09-10 2012-09-10
US61/698,869 2012-09-10

Publications (2)

Publication Number Publication Date
WO2014001071A2 WO2014001071A2 (en) 2014-01-03
WO2014001071A3 true WO2014001071A3 (en) 2014-05-30

Family

ID=48579085

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/061941 WO2014001071A2 (en) 2012-06-26 2013-06-11 Lithographic apparatus

Country Status (3)

Country Link
NL (1) NL2010950A (en)
TW (1) TW201403255A (en)
WO (1) WO2014001071A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017217266A1 (en) 2017-09-28 2019-03-28 Carl Zeiss Smt Gmbh Method for determining properties of an EUV source
EP3467588A1 (en) * 2017-10-03 2019-04-10 ASML Netherlands B.V. Method and apparatus for determining alignment properties of a beam of radiation
NL2022606A (en) * 2018-03-06 2019-09-10 Asml Netherlands Bv Radiation shielding device and apparatus comprising such shielding device
WO2020141052A1 (en) 2018-12-31 2020-07-09 Asml Netherlands B.V. Improved imaging via zeroth order suppression
DE102020203753A1 (en) * 2020-03-24 2021-09-30 Carl Zeiss Smt Gmbh Projection exposure system for semiconductor lithography

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064476A1 (en) * 1981-04-10 1982-11-10 Asulab S.A. Single mode laser resonator stabilization device
US5055695A (en) * 1990-06-28 1991-10-08 Wyko Corporation Alignment system and method for infrared interferometer
US20090284725A1 (en) * 2008-05-15 2009-11-19 Asml Netherlands B.V. Lithographic apparatus
US20090289205A1 (en) * 2008-05-20 2009-11-26 Komatsu Ltd. Mirror for extreme ultra violet, manufacturing method for mirror for extreme ultra violet, and far ultraviolet light source device
US20100140512A1 (en) * 2008-10-24 2010-06-10 Takashi Suganuma Extreme ultraviolet light source apparatus
EP2533078A1 (en) * 2011-06-09 2012-12-12 ASML Netherlands BV Radiation source and lithographic apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064476A1 (en) * 1981-04-10 1982-11-10 Asulab S.A. Single mode laser resonator stabilization device
US5055695A (en) * 1990-06-28 1991-10-08 Wyko Corporation Alignment system and method for infrared interferometer
US20090284725A1 (en) * 2008-05-15 2009-11-19 Asml Netherlands B.V. Lithographic apparatus
US20090289205A1 (en) * 2008-05-20 2009-11-26 Komatsu Ltd. Mirror for extreme ultra violet, manufacturing method for mirror for extreme ultra violet, and far ultraviolet light source device
US20100140512A1 (en) * 2008-10-24 2010-06-10 Takashi Suganuma Extreme ultraviolet light source apparatus
EP2533078A1 (en) * 2011-06-09 2012-12-12 ASML Netherlands BV Radiation source and lithographic apparatus

Also Published As

Publication number Publication date
TW201403255A (en) 2014-01-16
WO2014001071A2 (en) 2014-01-03
NL2010950A (en) 2013-12-31

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