WO2013170083A1 - Éléments de découpe en diamant pour trépans ensemencés avec une matière cristalline hcp - Google Patents

Éléments de découpe en diamant pour trépans ensemencés avec une matière cristalline hcp Download PDF

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Publication number
WO2013170083A1
WO2013170083A1 PCT/US2013/040422 US2013040422W WO2013170083A1 WO 2013170083 A1 WO2013170083 A1 WO 2013170083A1 US 2013040422 W US2013040422 W US 2013040422W WO 2013170083 A1 WO2013170083 A1 WO 2013170083A1
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WO
WIPO (PCT)
Prior art keywords
seed material
mixture
compact
diamond
hcp
Prior art date
Application number
PCT/US2013/040422
Other languages
English (en)
Inventor
Andrew David MURDOCK
Matthew Douglas MUMMA
John Martin Clegg
William Henry DUBOSE
Neal Alan BOWDEN
Original Assignee
Ulterra Drilling Technologies, L.P.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulterra Drilling Technologies, L.P. filed Critical Ulterra Drilling Technologies, L.P.
Priority to CA2872871A priority Critical patent/CA2872871A1/fr
Priority to EP13788488.8A priority patent/EP2847413A4/fr
Priority to CN201380036169.6A priority patent/CN104662251A/zh
Priority to IN9854DEN2014 priority patent/IN2014DN09854A/en
Publication of WO2013170083A1 publication Critical patent/WO2013170083A1/fr
Priority to ZA2014/08477A priority patent/ZA201408477B/en

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    • E—FIXED CONSTRUCTIONS
    • E21—EARTH OR ROCK DRILLING; MINING
    • E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B10/00—Drill bits
    • E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
    • E21B10/56—Button-type inserts
    • E21B10/567—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C04B35/528—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3817—Carbides
    • C04B2235/3826—Silicon carbides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/386—Boron nitrides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/422—Carbon
    • C04B2235/427—Diamond
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5454—Particle size related information expressed by the size of the particles or aggregates thereof nanometer sized, i.e. below 100 nm
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/75—Products with a concentration gradient
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/363—Carbon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/58—Forming a gradient in composition or in properties across the laminate or the joined articles
    • C04B2237/588—Forming a gradient in composition or in properties across the laminate or the joined articles by joining layers or articles of the same composition but having different particle or grain sizes
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • C22C2026/008—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes with additional metal compounds other than carbides, borides or nitrides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes

Definitions

  • the invention relates generally to cutting elements used for drill for earth boring drill bits.
  • Drag bits have no moving parts. As a drag bit is rotated, typically by rotating a drill string to which it is attached, discrete cutting elements ("cutters”) affixed to the face of the bit drag across the bottom of the well, scraping or shearing the formation. Each cutter of a rotary drag bit is positioned and oriented on a face of the drag bit so that a portion of it, which will be referred to as its wear surface, engages the earth formation as the bit is being rotated. The cutters are spaced apart on an exterior cutting surface or face of the body of a drill bit in a fixed, predetermined pattern.
  • the cutters are typically arrayed along each of several blades, which are raised ridges extending generally radially from the central axis of the bit, toward the periphery of the face, usually in a sweeping manner (as opposed to a straight line).
  • the cutters along each blade present a predetermined cutting profile to the earth formation, shearing the formation as the bit rotates. Drilling fluid pumped down the drill string, into a central passageway formed in the center of the bit, and then out through ports formed in the face of the bit, both cools the cutters and helps to remove and carry cuttings from between the blades.
  • Roller cone bits are comprised of two or three cone-shaped cutters that rotate on an axis at a thirty-five degree angle to the axis of rotation of the drill bit. As the bit is rotated, the cones roll across the bottom of the hole. Cutting elements—also called cutters— on the surfaces of the cones crush the rock as they pass between the cones and the formation.
  • one or more wear or working surfaces of the cutting elements are made from a layer of polycrystalline diamond (“PCD”) in the form of a polycrystalline diamond compact (“PDC”) that is attached to a substrate.
  • PCD polycrystalline diamond
  • PDC polycrystalline diamond compact
  • a common substrate is cemented tungsten carbide. When PDC is made, it is bonded to the substrate, and PDC bonded to the substrate comprising the cutter. Drag bits with such PDC cutting elements are sometimes called "PDC bits.”
  • PDC though very hard with high abrasion or wear resistance, tends to be relatively brittle.
  • the substrate while not as hard, is tougher than the PDC, and thus has higher impact resistance.
  • the substrate is typically made long enough to act as a mounting stud, with a portion of it fitting into a pocket or recess formed in the body of the drag bit or, the case of a roller cone bit, in the packet formed in a roller.
  • the PDC and the substrate structure have been attached to a metal mounting stud, which is then inserted into a pocket or other recess.
  • a polycrystalline diamond compact is made by mixing the polycrystalline diamond in powder form with one or more powdered metal catalysts and other materials, forming the mixture into a compact, and then sintering it using high heat and pressure or microwave heating.
  • cobalt or an alloy of cobalt is the most common catalyst, other Group VIII metal, such as nickel, iron and alloys thereof can be used as catalyst.
  • a PDC is typically formed by packing polycrystalline diamond grains (referred to as "diamond grit") without the metal catalyst adjacent a substrate of cemented tungsten carbide, and then sintering the two together.
  • Substrates for supporting a PDC layer are made, at least in part, from cemented metal carbide, with tungsten carbide being the most common.
  • Cemented metal carbide substrates are formed by sintering powdered metal carbide with a metal alloy binder.
  • the composite of the PDC and the substrate can be fabricated in a number of different ways. It may also, for example, include transitional layers in which the metal carbide and diamond are mixed with other elements for improving bonding and reducing stress between the PDC and substrate. References herein to substrates include such substrates.
  • catalyst PDC Because of the presence of metal, catalyst PDC exhibits thermal instability. Cobalt has a different coefficient of expansion to diamond. It expands at a greater rate, thus tending to weaken the diamond structure at higher temperatures. Furthermore, the melting point of cobalt is lower than diamond, which can lead to the cobalt causing diamond crystals within the PDC to begin to graphitize when temperatures reach or exceed the melting point, also weakening the PDC.
  • a substantial percentage— usually more than 50%; often 70% to 85%; and possibly more— of the catalyst is removed from at least a region next to one or more working surfaces that experience the highest temperatures due to friction.
  • the catalyst is removed by a leaching process that involves placing the PDC in a hot strong acid, examples of which include nitric acid, hydrofluoric acid, hydrochloric acid, or perchloric acid, and combinations of them.
  • a hot strong acid examples of which include nitric acid, hydrofluoric acid, hydrochloric acid, or perchloric acid, and combinations of them.
  • the acid mix may be heated and/or agitated to accelerate the leaching process.
  • the invention pertains to improved cutting elements for earth boring drill bits, to methods for making such cutting elements, and to drill bits utilizing such cutting elements.
  • a polycrystalline diamond compact which is attached or bonded to a substrate to form a cutter for a drill bit, is comprised of sintered polycrystalline diamond interspersed with a seed material which has a hexagonal close packed (HCP) crystalline structure.
  • HCP hexagonal close packed
  • Regions with the HCP seed material leach more quickly as compared to regions of the sintered polycrystalline diamond structure without the HCP seed material, allowing deeper leaching than otherwise possible due to technical limitations of PCD made without any seeding material.
  • Fast leaching has a particular advantage with polycrystalline diamond feeds that include particles that are less than 30 microns particle in size.
  • Selectively seeding portions or regions of a sintered polycrystalline diamond structure also permits taking advantage of differing leach rates to form leached regions with differing distances or depths and geometries.
  • FIGURE 1 is a perspective view of a PDC drag bit.
  • FIGURES 2A, 2B and 2C are perspective, side and top views, respectively, of representative PDC cutter suitable for the drag bit of FIG. 1.
  • FIGURES 3A, 3B and 3C are cross-sections through four different examples of the PDC cutter of FIGS. 2A-2C, that has been seeded with HCP material in discrete regions within its diamond structure and then leached to partially or completely remove catalyst from at least the seeded region.
  • FIGURE 4 is a cross section of an embodiment of the PDC cutter of FIGURES 2A-2C with HCP seed material interspersed throughout the diamond layer.
  • FIG. 1 illustrates an example 100 of a PDC drag bit.
  • a PDC drag bit is intended to be a representative example of drag bits and, in general, drill bits for drilling oil and gas wells. It is designed to be rotated around its central axis 102. It is comprised of a bit body 104 connected to a shank 106 having a tapered threaded coupling 108 for connecting the bit to a drill string and a "bit breaker" surface 111 for cooperating with a wrench to tighten and loosen the coupling to the drill string.
  • the exterior surface of the body intended to face generally in the direction of boring is referred to as the face of the bit.
  • the face generally lies in a plane perpendicular to the central axis 102 of the bit.
  • the body is not limited to any particular material. It can be, for example, made of steel or a matrix material such as powdered tungsten carbide cemented by metal binder.
  • each blade Disposed on the bit face are a plurality of raised “blades,” each designated 110, that rise from the face of the bit.
  • Each blade extends generally in a radial direction, outwardly to the periphery of the cutting face.
  • each blade On each blade is mounted a plurality of discrete cutting elements, or “cutters,” 112. Each discrete cutting element is disposed within a recess or pocket.
  • the cutters are placed along the forward (in the direction of intended rotation) side of the blades, with their working surfaces facing generally in the forward direction for shearing the earth formation when the bit is rotated about its central axis.
  • the cutters are arrayed along blades to form a structure cutting or gouging the formation and then pushing the resulting debris into the drilling fluid which exits the drill bit through the nozzles 117.
  • the drilling fluid in turn transports the debris or cuttings uphole to the surface.
  • all of the cutters 112 are PDC cutters. However, in other embodiments, not all of the cutters need to be PDC cutters.
  • the PDC cutters in this example have a working surface made primarily of super hard, polycrystalline diamond, or the like, supported by a substrate that forms a mounting stud for placement in a pocket formed in the blade.
  • Each of the PDC cutters is fabricated discretely and then mounted— by brazing, press fitting, or otherwise — into pockets formed on bit.
  • the PDC layer and substrate are typically used in the cylindrical form in which they are made.
  • This example of a drill bit includes gauge pads 114. In some applications, the gauge pads of drill bits such as bit 100 can include an insert of thermally stable, sintered polycrystalline diamond (TSP).
  • TSP thermally stable, sintered polycrystalline diamond
  • FIGURES 2A-2C illustrate examples of a PDC cutter 200. It is comprised of a substrate 202, to which is attached a layer of sintered polycrystalline diamond (PCD) 204. This layer is sometimes also called a diamond table. Note that the cutter is not drawn to scale and intended to be representative of cutters generally that have a polycrystalline diamond structure attached to a substrate, and in particular the one or more of the PDC cutters 112 on the drill bit 100 of FIG. 1. Although frequently cylindrical in shape, PDC cutters in general are not limited to a particular shape, size or geometry, or to a single layer of PCD. In this example, an edge between top surface 206 and side surface 208 of the diamond layer 204 is beveled to form a beveled edge 210.
  • PCD sintered polycrystalline diamond
  • the top surface and the beveled surface are, in this example, each a working surface for contacting and cutting through the formation.
  • a portion of the side surface, particularly nearer the top, may also come into contact with the formation or debris.
  • Not all of the cutters on a bit must be of the same size, configuration, or shape.
  • PDC cutters can be cut, ground, or milled to change their shapes.
  • the cutter could have multiple discrete PCD structures.
  • Other examples of possible cutter shapes might pre-flatted gauge cutters, pointed or scribe cutters, chisel-shaped cutters, and dome inserts.
  • the diamond structure comprising the diamond layer 204 has at least one, discrete region or area within it interspersed with grains of a crystalline seed material.
  • a crystalline seed material is material having a hexagonal close pack (HCP) structure.
  • HCP crystalline seed material include materials with having a wurtzite crystal structure, including for example wurtzite boron nitride (BNw), wurtzite silicon carbide, and Lonsdaleite (hexagonal diamond).
  • the diamond structure is formed by mixing small or fine grains of synthetic or natural diamond, referred to within the industry as diamond grit, with grains of HCP seed material (with or without additional materials) according to a predetermined proportion to obtain a desired concentration.
  • a compact is then formed either entirely of the mixture or, alternately, the compact is formed with the mixture discrete regions or volumes within the compact— containing the mixture and the remaining portion of the compact (or at least one other region of the compact) comprising PCD grains (with any additional material) but not the HCP seed material.
  • the formed compact is then sintered under high pressure and high temperature in the presence of a catalyst, such as cobalt, a cobalt alloy, or any group VIII metal or alloy.
  • the catalyst may be infiltrated into the compact by forming the compact on a substrate of tungsten carbide that is cemented with the catalyst, and then sintering.
  • the result is a sintered PCD structure with at least one region containing HCP seed material dispersed throughout the region in the same proportion as the mixture.
  • the HCP seed material may have a grain size of between 0 and 60 microns in one embodiment, between 0 and 30 microns, and between 0 and 10 microns in another embodiment.
  • the grains of PCD in the mixture may be within the range of 0 to 40 microns, and may be as small as nano particle size.
  • the proportion or concentration of HCP seed material within the mixture, and thus within the region seeded with the HCP seed material is in one embodiment 5% or less by volume. In another embodiment it is in the range 0.05% to 2% by volume and in a further embodiment, in the range of 0.05% to 0.5% by volume.
  • the PCD may be layered within the compact according to grain size.
  • a layer next to a working layer will be comprised of finer grains (i.e. grains smaller than a predetermined grain size) and a layer further away, perhaps a base layer next to the substrate, with grain larger than the predetermined size.
  • the HCP seed material can be mixed with only the finer grain diamond grit mix to form a first region or layer next to a working surface, or with multiple layers of diamond grit mix.
  • mixtures having different concentrations or proportions of HCP seed material within the diamond layer may form a plurality of different regions or layers in the diamond structure, with or without having HCP seed material in the remaining structure of the PCD layer.
  • the HCP material is replaced with a crystalline seed material (other than diamond) having a zinc blend crystalline structure, which is a type of face centered cubic (FCC) structure.
  • a crystalline seed material other than diamond
  • FCC face centered cubic
  • examples of such material include cubic boron nitride.
  • the regions or portion of the sintered PCD diamond layer or structure 204 in which an HCP seed material is interspersed is generally indicated by stippling, and the depth to which the diamond layer is partially leached is indicated by dashed line 300.
  • the seeded region is adjacent the top surface 206 and the beveled peripheral edge surface 210, each of which is a working surface.
  • the region of seeding 302 extends across the entire top surface of diamond layer 204, and down a portion of its sides. It extends downwardly from the top surface 206 to a uniform depth 304 as measured from the top surface and is less than the thickness of the PCD layer. As indicated by the dashed line 300 the diamond layer is leached to the depth 304, the leaching removing a substantial percentage of the metal catalyst remaining in the diamond layer after sintering as compared to unleached regions.
  • the seeded region 306 of the embodiment of FIGURE 3B also extends, like the embodiment of FIGURE 3A, across the full face of the diamond layer 204.
  • the region extends a distance 308 down the side surface 208 that is approximately the same distance as the seeded region 302 is from the top surface of the embodiment of FIGURE 3A, as shown by depth 304.
  • the seeded region extends a depth from the top surface that is approximately the distance 308, which is substantially less than the depth 304 of FIGURE 3A. Because the rate of leaching is relatively faster in the seeded region 306 than the unseeded regions of the diamond layer, the leaching pattern, indicated by line 300, can be made substantially coincident with the seeded region's boundary.
  • FIGURE 3C has an annular shaped seeded region 310 that extends inwardly from the periphery of top surface 206, shown as 208 of FIGURE 3C, by a distance 312 (which is less than the radius of the top surface) and to a depth 314 as measured from the top surface 206.
  • This embodiment is leached to a depth indicated by a dashed line 300. Because the leaching rate is faster for the seeded region 310, leach depth 314 in the seeded region 310 is greater than the leach depth 316 in an unseeded region under the portion of top surface 206, shown as region 318.
  • the entire diamond layer 204 is seeded with HCP crystalline material.
  • the resultant PCD tends to be very dense. This increased density leads to considerable increases in leaching times. It is believed that this is due to the PCD microstructure having relatively little interstitial space, thus inhibiting the access of the leaching acid to the group VIII metal catalyst.
  • the PCD layer is comprised of diamond grit with grain sizes of 0-10 microns, pressed at elevated pressure, the practical limitation in leach depth will be of the order of 250 microns. This is due to the degradation of the sealing materials used to prevent the acid from contact the substrate.

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  • Geochemistry & Mineralogy (AREA)
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Abstract

L'invention concerne un compact de diamant polycristallin (PDC) qui est attaché ou lié à un substrat pour former un outil de découpe pour un trépan, qui est constitué d'un diamant polycristallin fritté interespacé par une matière d'ensemencement qui a une structure cristalline hexagonale compacte (HCP). Une région de la structure de diamant polycristallin fritté, près d'une ou plusieurs de ses surfaces de travail, qui a été ensemencée avec une matière d'ensemencement HCP avant le frittage, est lixiviée pour éliminer le catalyseur. Un ensemencement de façon sélective de parties ou de régions d'une structure de diamant polycristallin fritté permet à différents taux de lixiviation de former des régions lixiviées ayant des distances ou des profondeurs et des géométries différentes.
PCT/US2013/040422 2012-05-11 2013-05-09 Éléments de découpe en diamant pour trépans ensemencés avec une matière cristalline hcp WO2013170083A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA2872871A CA2872871A1 (fr) 2012-05-11 2013-05-09 Elements de decoupe en diamant pour trepans ensemences avec une matiere cristalline hcp
EP13788488.8A EP2847413A4 (fr) 2012-05-11 2013-05-09 Éléments de découpe en diamant pour trépans ensemencés avec une matière cristalline hcp
CN201380036169.6A CN104662251A (zh) 2012-05-11 2013-05-09 接种有hcp晶体材料的用于钻头的金刚石切割部件
IN9854DEN2014 IN2014DN09854A (fr) 2012-05-11 2013-05-09
ZA2014/08477A ZA201408477B (en) 2012-05-11 2014-11-18 Diamond cutting elements for drill bits seeded with hcp crystalline material

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EP2847413A1 (fr) 2015-03-18
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CA2872871A1 (fr) 2013-11-14
IN2014DN09854A (fr) 2015-08-07

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