WO2013157884A1 - Circuit de dispositif d'alimentation à découpage pour équipement d'éclairage à diode électroluminescente - Google Patents

Circuit de dispositif d'alimentation à découpage pour équipement d'éclairage à diode électroluminescente Download PDF

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Publication number
WO2013157884A1
WO2013157884A1 PCT/KR2013/003336 KR2013003336W WO2013157884A1 WO 2013157884 A1 WO2013157884 A1 WO 2013157884A1 KR 2013003336 W KR2013003336 W KR 2013003336W WO 2013157884 A1 WO2013157884 A1 WO 2013157884A1
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Prior art keywords
circuit
terminal
power supply
diode
bias
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PCT/KR2013/003336
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English (en)
Korean (ko)
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김영안
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Kim Young-Ahn Daniel
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Publication of WO2013157884A1 publication Critical patent/WO2013157884A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/37—Converter circuits
    • H05B45/3725—Switched mode power supply [SMPS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Definitions

  • the present invention relates to a switching mode power supply equipment circuit for power supply of light emitting diode (LED) lighting equipment.
  • LED light emitting diode
  • LED light emitting diode
  • LED lighting devices can express natural colors, are simple to install, and have about 10% power consumption compared to the same brightness as general incandescent lamps, thus saving a lot of power through high efficiency power design. As a result, the lighting device is being replaced by a light emitting diode (LED) lighting device in terms of energy saving from a social point of view.
  • LED light emitting diode
  • the general AC power source is often used 110V or 220V with a frequency of 50Hz or 60Hz, and the method of driving the light emitting diode (LED) device of the LED lighting device is largely classified into three methods.
  • the LED and LED devices are driven by controlling voltage and current in a linear manner.
  • the AC voltage is reduced by using a transformer, and then a constant level DC power is obtained through a rectifier.
  • It is a method of driving a constant current by connecting a light emitting diode (LED) element and a resistor to a constant voltage output from the (Integrated Circuit), and the linear constant current method outputs a constant current using a constant current IC.
  • the linear approach has the disadvantage that the drive circuit is simple, but the power efficiency is mainly due to the generation of heat in the resistor.
  • the switching method uses a duty ratio of ON-OFF of a square wave.
  • the linear method is a driving method using a pulse width modulation (PWM) method.
  • PWM pulse width modulation
  • heat generated in additional circuits other than the light emitting diode (LED) device can be reduced, thereby improving the life of the light emitting diode (LED) device.
  • current driving devices of LED lighting apparatuses generally use a switching mode power supply (SMPS) method that converts AC power into DC power using an inverter.
  • SMPS switching mode power supply
  • the switching power supply circuit has to be applied to the driving device.
  • a light emitting diode (LED) lighting device including a driving device using a conventional switching power supply device has a problem in that the circuit design and appearance design are difficult and the installation conditions for installing the light emitting diode (LED) lighting device are limited.
  • the prior art shown in FIG. 1 is connected to an input filter circuit including an noise suppression capacitor C1, C2 and a line filter LF, and an input filter circuit to alternating an alternating voltage.
  • Bridge diode DB for full-wave rectification of voltage, and smoothing capacitor C3 with a capacity of 1 ⁇ F or less connected to the output of the bridge diode DB to smooth the pulse voltage.
  • a DC-DC conversion circuit (here a step-down chopper circuit) connected to both ends of a smoothing capacitor C3 and light emission connected to the output of the DC-DC conversion circuit.
  • a DC-DC conversion circuit control circuit is suppressed by suppressing high frequency noise propagated at the same time and suppressing applied electromotive force after rectification at the time of application of a lightning surge in a common mode. It is claimed to have the effect of preventing the destruction of a control circuit or a light emitting diode (LED) device.
  • the conventional technique of FIG. 1 recommends a value of 1uF or less (represented value of 0.23 uF) of the smoothing capacitor C3
  • the maximum DC voltage of the pulse wave waveform after the bridge diode (DB) is considered in the case of 220V commercial AC power.
  • the internal pressure of the smoothing capacitor C3 is generally 400 V or more.
  • the high-pressure capacitor is generally used to reduce the volume and unit cost, even if the capacitor is relatively small.
  • an expensive electrolytic capacitor having an operating temperature characteristic of 105 degrees Celsius is generally used, and its lifetime is also longer than that of a general electrolytic capacitor of about 2,000 hours.
  • LED light emitting diode
  • more than 10,000 hours are used, and efforts are being made to minimize the overall lifespan of LED lighting equipment.
  • the lifetime of electrolytic capacitors is limited, which has a very short life cycle compared to other components, which greatly affects the shortening of the overall life of LED lighting devices. You can't avoid going crazy.
  • the present invention in the light emitting diode (LED) lighting device circuit, using the rectified output in the state of the pulsating state in which the rectifying part smoothing capacitor used in the conventional prior art is used as the positive electrode mains terminal (Vd) as it is, step-down chopper In the chopper switching power supply circuit, a current sensing diode D6 and a positive feedback loop are provided in a current detector 91 resistor R8 for sensing the maximum current flowing through the light emitting diode (LED) light load 22.
  • the present invention devises a relatively simple and simple switching power supply circuit without using an electrolytic capacitor which is a key cause of cost increase and lifespan in a light emitting diode (LED) lighting device power supply.
  • LED light emitting diode
  • the present invention provides switching power supply circuits for light emitting diode (LED) luminaires that not only significantly reduce production costs but also significantly extend their lifetime.
  • 1 is a circuit diagram showing an embodiment of the prior art.
  • FIG. 2 is a circuit diagram showing a first embodiment of a switching power supply circuit for a light emitting diode (LED) lighting device according to the present invention
  • FIG. 3 is a circuit diagram showing a second embodiment in which a charge pump circuit is applied to a bias 24 power supply in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention
  • FIG. 4 is a circuit diagram showing a third embodiment in which a semiconductor temperature compensation circuit is applied to a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention
  • Fig. 5 is a circuit diagram showing a fourth embodiment in which a flickering prevention circuit employing a differential amplifier circuit is applied to a switching power supply circuit for a light emitting diode (LED) lighting device according to the present invention.
  • FIG. 6 is a circuit diagram showing a fifth embodiment of applying a thermistor (NTC) temperature compensation circuit with reverse resistance in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention.
  • NTC thermistor
  • FIG. 7 shows a sixth embodiment to which a complementary circuit using a complementary device, which is an electronic circuit, is applied to a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention.
  • a complementary circuit using a complementary device which is an electronic circuit
  • a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention.
  • Fig. 8 is a waveform diagram showing in detail the operation waveforms of the main parts in the switching power supply circuit for the light emitting diode (LED) lighting apparatus according to the present invention.
  • Fig. 9 is a circuit diagram showing a seventh embodiment to which a stabilization circuit of an operating state is applied in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention.
  • Fig. 10 is a circuit diagram showing an eighth embodiment of applying a flickering prevention circuit employing a potential-current conversion constant current control circuit in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention.
  • Fig. 11 is a circuit diagram showing a ninth embodiment in which a temperature change compensation circuit is additionally applied to a potential-current conversion constant current control circuit in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention.
  • FIG. 12 is a circuit diagram showing a tenth embodiment in which a DC power supply such as a battery is applied as an input power supply in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention.
  • a DC power supply such as a battery
  • LED light emitting diode
  • Fig. 13 is a circuit diagram showing an eleventh embodiment in which a power efficiency improving circuit is applied in a switching power supply circuit for a light emitting diode (LED) lighting device according to the present invention.
  • Fig. 14 is a circuit diagram showing a twelfth embodiment for light output flickering compensation of a light emitting diode (LED) light load in a switching power supply circuit for a light emitting diode (LED) lighting device according to the present invention.
  • Fig. 15 is a circuit diagram showing a thirteenth embodiment for providing power factor and THD improvement function in a switching power supply circuit for a light emitting diode (LED) lighting device according to the present invention
  • FIG. 16 is a circuit diagram showing a fourteenth embodiment in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention.
  • an input AC power source Vs passes through a rectifying unit to form a power supply unit having a circuit ground G and a positive main power terminal Vd in the form of a pulse current.
  • the main power supply terminal Vd is connected to the series load circuit section 28 to which at least one step-down choke coil L2 and the light emitting diode (LED) lighting load 22 are connected in series and is connected between the load circuit section and the circuit ground (G).
  • the semiconductor switching element Q1 is formed of at least one field effect transistor (FET or MOSFET), a junction transistor (BJT), or an insulated gate bipolar transistor (IGBT), and the anode main power supply terminal Vd and the semiconductor switching element
  • FET or MOSFET field effect transistor
  • BJT junction transistor
  • IGBT insulated gate bipolar transistor
  • a free wheel diode D4 is present in circuit between Q1 so that the anode of the regenerative diode D4 is located at the drain terminal or the collector terminal of the semiconductor switching element Q1.
  • a terminal is connected, and a cathode terminal of a regenerative diode D4 is connected to the cathode main power terminal Vd, and a resistor R1 and a capacitor C1 are connected in series between the anode main power terminal Vd and the circuit ground G.
  • a current detector 91 resistor R8 is provided in series between the terminal and the circuit ground G, and a current is detected at a connection node between one end of the current detector 91 resistor R8 and the switching semiconductor element Q1. After the anode terminal of the diode D6 is connected, the cathode terminal of the current detecting diode D6 is connected to the junction-type transistor Q2 for ON-OFF switching control of the semiconductor switching element.
  • the bias supply circuit 23 of the base terminal When connected to the ear supply circuit 23, the bias supply circuit 23 of the base terminal includes a charge / discharge capacitor C3 in parallel between the cathode terminal of the current detecting diode D6 and the circuit ground G. After the discharge resistor R7 is provided in parallel, the connection node of the current detecting diode D6 and the capacitor C3 is connected to a circuit composed of resistors R6 and R5 and connected to the switching control junction transistor Q2.
  • the collector terminal is connected to the gate terminal when the switching semiconductor element Q1 is a field effect transistor (FET) or an insulated gate bipolar transistor (IGBT), and the base terminal when the junction transistor BJT is connected.
  • FET field effect transistor
  • IGBT insulated gate bipolar transistor
  • a light emitting diode LED
  • the supply circuit 23 in the circuit typically comprises a resistor Rh which provides hysteresis (hysteresis) between the characteristic is disclosed.
  • the AC input power supply Vs which has passed through the power switch SW1 and the overcurrent blocking fuse F1, respectively, passes through the varistor Z1, which is an overvoltage surge absorbing element, in parallel.
  • the varistor Z1 which is an overvoltage surge absorbing element, in parallel.
  • the bridge diode (DB1) rectifying unit is a circuit for providing an onion rectifying (or full-wave rectifying) waveform and may be configured by combining one integrated bridge diode element or four general rectifying diodes, and the rectifying unit is a half-wave rectifying unit consisting of one rectifying diode. It may be configured using a circuit.
  • the positive electrode mains terminal Vd passing through the rectifier provides a bias power VCC through a voltage drop and smoothing step through a resistor R1 and a capacitor C1, and a resistor switching semiconductor element Q1 through a zener diode D3. Limits the maximum bias voltage magnitude of the device to prevent destruction of the device.
  • a field effect transistor FET
  • FET field effect transistor
  • a junction transistor BJT or an insulated gate bipolar transistor IGBT may be used.
  • an ON-OFF control signal is applied to the switching semiconductor element Q1 through the bias resistor R2 by the switching transistor Q2 at the gate terminal or the base terminal of the switching semiconductor element Q1.
  • This bias circuit consists of a charge / discharge capacitor (C3) and resistors R5, R6, and R7 (resistors for setting the discharge time of capacitor C3), and are omitted for resistor R7 depending on the capacitance value of capacitor C3 and the presence or absence of resistor R5. Can be applied.
  • the current detecting diode D6 receives a voltage proportional to the load current value flowing through the resistor R8 of the current detector 91 when the switching semiconductor element Q1 is in the conduction state (ON), thereby charging the bias supply circuit 23. The electric charge is charged in the discharge capacitor C3 to supply the bias power through the base terminal of the switching transistor Q2.
  • the current detecting diode D6 is responsible for blocking the charge charged in the current detecting charge / discharge capacitor C3 from being rapidly discharged backward through the current detecting unit 91 resistor R8.
  • a Schottky diode having a low forward voltage is preferably used, and the charge / discharge capacitor C3 of the bias supply circuit 23 is a base bias of the junction transistor Q2 for switching control only. The discharge is performed only through the circuit, and maintains the conduction state of the switching control junction transistor Q2 for a predetermined time, thereby determining the Toff value, which is the OFF state time of the switching semiconductor element Q1. do.
  • hysteresis characteristics are given to the base bias circuit 23 of the switching transistor Q2.
  • the hysteresis characteristics are positively feedbacked in a circuit.
  • a resistor Rh providing hysteresis characteristics is provided between the bias supply circuits 23 of the base terminal of the switching control junction transistor Q2.
  • the bias supply circuit 23 includes a resistor R4 and a zener diode D5. Additional circuitry is added. In this case, the zener diode D5 may be replaced with a general switching diode. The larger the resistance value of Rh or R4 that provides this hysteresis characteristic in circuit, the smaller the Toff time.
  • a line filter circuit is added as a generally well-known circuit between the varistor Z1 and the bridge diode DB1 AC input unit, which is an overvoltage surge absorbing element, to reduce noise. Inflows and outflows can be attenuated to some extent.
  • a charge pump function from one end of the series load circuit section 28 in a switching power supply circuit for a light emitting diode (LED) lighting device according to the invention.
  • the capacitor C2 and the inductor L1 are formed in series circuit and then connected together with the anode terminal of the at least one charge pump charging diode D1 and the cathode terminal of the charge pump discharge diode D2,
  • An additional circuit diagram is characterized in that the cathode terminal of the charge pump charging diode D1 is connected to the bias circuit power supply Vcc, and the anode terminal of the other charge pump discharge diode D2 is connected to the circuit ground G. Is disclosed.
  • the circuit shown in FIG. 3 is due to the gate capacitance when the field effect transistor (FET) is used in the switching semiconductor element Q1 or the need for sufficient base driving current when the junction transistor BJT is used.
  • FET field effect transistor
  • the current drop across bias resistor R2 needs to meet several milliamps (eg, around 10 mA) to improve switching speed.
  • a charge pump circuit including the capacitor C2 and the inductor L1 and the diodes D1 to D2 is used.
  • the cathode terminal and the circuit of the current detecting diode (D6) When there is a temperature compensating diode D31 and a junction transistor Q31 circuit between ground G, the diode D6 is biased through a series circuit with a resistor R31 at the base terminal of the junction transistor Q31.
  • a circuit is provided, and the emitter terminal of the junction transistor Q31 is connected to the circuit ground G, and the collector terminal is a junction transistor Q2 for ON-OFF switching control of the semiconductor switching element Q1.
  • a circuit is characterized in that it is connected to a bias supply circuit (23) of a base terminal of.
  • the third embodiment of the present invention compensates for operating characteristics that change as the operating temperature of each device increases with respect to the current detecting diode D6 and the switching control junction transistor Q2.
  • the current detecting diode D6 generally has a property of decreasing forward voltage characteristics compared to the same operating current as the temperature of the device rises.
  • the temperature of the device is similarly increased. As it increases, the voltage characteristic between base emitters decreases compared to the same operating current. Therefore, the temperature compensation diode D31 is preferably an element having the same electrical temperature operating characteristics as the current detection diode D6.
  • the temperature compensation junction transistor Q31 is also used for the switching control junction transistor ( It is reasonable to use an element having an electrical temperature operating characteristic such as Q2). Therefore, in the embodiment of Fig. 4, Q1 is a state in which the elements of D6 and Q2 are low in the current detection value detected through R8 due to the lowered operating voltage characteristic due to the increase in operating temperature, i.e., in the state where the maximum value of the load current is small. Compensation for the switching operation is performed to prevent the average value of the load current from changing according to the ambient temperature change.
  • the conduction-blocking (ON) of the semiconductor switching element Q1 in the switching power supply circuit for the light emitting diode (LED) lighting apparatus according to the present invention.
  • -OFF When there is a differential amplifier circuit 51 to be connected to the bias supply circuit of the base terminal of the switching transistor Q2 for switching control, a voltage is supplied from the positive current main terminal Vd of the pulse current through the resistors R41 to R42.
  • the fourth embodiment of the present invention prevents the brightness of the light emitting diode illumination load 22 from changing due to a variation in the average voltage of the input AC power supply Vs, and in particular, prevents the input AC from changing.
  • Vs variation period of the voltage
  • LED light emitting diode
  • the flickering frequency setting to be compensated depends on the time constant values of the capacitor C41 and the resistor R43, and is preferably set to about 20 hertz (Hz).
  • the differential amplifier circuit 51 may use components in the form of integrated circuits (ICs), such as operational amplifiers (OP-Amps), and the embodiment is omitted since it is well known to those skilled in the art. I shall.
  • FIG. 6 shows a fifth embodiment in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention, wherein the semiconductor switching element (Q1) is for ON-OFF switching control junction.
  • a circuit is disclosed in which a thermistor (NTC) and a resistor (R51) having reverse resistance characteristics for temperature compensation are provided between a base terminal of a type transistor (Q2) and a circuit ground (G) in a series circuit.
  • NTC thermistor
  • R51 resistor
  • G circuit ground
  • having a temperature reverse resistance characteristic means that the resistance value decreases as the temperature of the device rises, and the bias current flowing in Q2 in combination with the resistance reduction rate of NTC and the series resistor R51 in a certain temperature range. By compensating for it, it is possible to stabilize the switching operation unevenness of Q1 due to the change of the operating point of D6 to Q2 according to the temperature change.
  • FIG. 7 shows a sixth embodiment in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention, and an electronic circuit complementary element corresponding to the circuit as the first embodiment shown in FIG.
  • a circuit diagram is disclosed in which a complementary circuit using a complementary device is used instead.
  • the complementary device refers to an N-channel device and a P-channel device for a field effect transistor (FET), and an NPN device for a junction transistor (BJT).
  • FET field effect transistor
  • BJT junction transistor
  • PNP-type devices are used to refer to each other, and each of these devices is manufactured with the opposite polarity of electrical operation but with almost the same characteristics.
  • the complementary circuit is a circuit designed by reversing the electrical polarity of the original circuit using the complementary device, and the wiring of the components having the polarity is reversed.
  • Typical polar components include diodes, electrolytic capacitors, and tantalum capacitors.
  • FIG. 8 shows a switching power supply circuit for a light emitting diode (LED) lighting device according to the present invention, wherein the input AC voltage (Vs) and the positive main power terminal (Vd), which are main parts of the embodiment shown in FIG. And an operating waveform diagram of Vp representing the gate-source voltage or the base emitter voltage of the semiconductor switching element Q1 and the load current Io flowing through the light emitting diode (LED) load 22 is shown.
  • the load current Io is repeatedly increased and decreased around the switching threshold Imax to supply current to the light emitting diode (LED) load 22, and when the semiconductor switching element Q1 is in the ON state,
  • the time from when it starts to rise and reaches Imax and changes the semiconductor switching element Q1 to the OFF state is Ton, and the discharge time constant value of the base bias circuit part of Q2 centering on the capacitor C3 and the resistor R7 is After the predetermined time Toff value, the semiconductor switching device Q1 is repeatedly turned on.
  • the operating frequency varies from about 10 kilohertz (KHz) to 100 kilohertz (KHz), depending on the voltage state of the positive mains terminal (Vd) in the form of a pulse, and the visual organs of the human body Operation occurs in high frequency bands outside the perceivable range.
  • FIG. 9 is a circuit diagram illustrating a seventh embodiment in which a stabilization circuit in an operating state is applied in a switching power supply circuit for a light emitting diode (LED) lighting device according to the present invention.
  • a part 25 and a second semiconductor switching element Q4 interlocked therewith are provided to be inserted between the bias circuit power supply Vcc and the bias circuit portion of the main semiconductor switching element Q1 to form a switching circuit to form a second bias power supply Vcc2.
  • Vcc When providing the second semiconductor switching element (Q4) is turned into a conductive state (ON) after the bias circuit power supply Vcc reaches a predetermined potential level or more to supply power to the second bias power supply Vcc2, Vcc Is turned off when the power supply falls below a predetermined potential level so that the power supply to the second bias power supply Vcc2 is cut off.
  • a switching power supply circuit for a lighting device is disclosed.
  • a series on the gate terminal or base terminal connection node of the semiconductor switching element (Q1) The low diode D9 is inserted so that the anode terminal of the diode D9 is connected to the gate terminal or the base terminal of the semiconductor switching element Q1, and the cathode terminal of the diode D9 is the switching control junction transistor Q2.
  • a second switching control transistor Q3 together with the diode D9, and the collector terminal in the case of a junction transistor or the drain terminal in the case of a field effect transistor is connected to the bias power supply unit Vcc.
  • the base terminal to the gate terminal is connected to the cathode terminal of the diode (D9) and the switching control contact It is connected to the connection node with the collector terminal of the transistor Q2, the emitter terminal to the source terminal of the coupling node of the anode terminal of the diode (D9) and the gate terminal to the base terminal of the semiconductor switching element (Q1)
  • the conduction of the semiconductor switching element Q1 due to the gate or base input capacitance of the semiconductor switching element Q1 at the time of its conduction (ON) operation ( ON) prevents a decrease in the operating speed
  • the operation state of the diode D9 inserted in series is a forward conduction (ON) operation when the switching control junction transistor Q2 is connected to circuit ground (ON).
  • the semiconductor switching element Q1 is discharged to the circuit ground G while the charge charged in the gate or base input capacitance of the semiconductor switching element Q1 is quickly discharged. It is characterized in that the (OFF) to improve the operation speed.
  • a capacitor in parallel with the current detector 91 resistor is provided, and a circuit in which a capacitor C4 or a capacitor C4 and a resistor R10 are connected in series is used as the load circuit unit 28.
  • the stabilization result can be obtained, and in the bias supply circuit 23 of the base terminal of the switching control junction transistor Q2, a resistor R5 in parallel between the base terminal of the switching control junction transistor Q2 and the circuit ground.
  • At least one capacitor C3 and at least one resistor R7 is provided in parallel between the connection node and the circuit ground of the cathode.
  • a cathode terminal of the diode D5 is connected to a bias supply circuit 23 of the base terminal of the switching control junction transistor Q2, and an anode terminal of the diode D5 is connected to a circuit ground (
  • a switching power supply circuit for a light emitting diode (LED) lighting device is provided in connection with G), and the diode D5 can be used in the form of a zener diode.
  • FIG. 10 shows an eighth embodiment in which a flickering prevention circuit employing a potential-current conversion constant current control circuit 26 is applied to a switching power supply circuit for a light emitting diode (LED) lighting device according to the present invention.
  • the potential-current conversion constant current control circuit 26 connected with the bias supply circuit 23 of the base terminal of the junction-type transistor Q2 for ON-OFF switching control of the semiconductor switching element is described above.
  • the anode which is input from the anode main power supply terminal Vd, undergoes voltage division of the resistors R13 to R14, passes through the rectifying diode D14, and is formed through a parallel circuit of the smoothing capacitor C8 and the discharge resistor R17.
  • the potential-current conversion constant current control circuit 26 is connected to the anode main power supply.
  • a constant current sink inversely proportional to the magnitude of the average potential of (Vd) is provided to the bias supply circuit 23 of the base terminal of the junction transistor Q2 for ON-OFF switching control of the semiconductor switching element.
  • a switching power supply circuit for a light emitting diode (LED) lighting device is disclosed.
  • an eighth embodiment of a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention shown in FIG. 10 is applied to a bias supply circuit 23 of a base terminal of the switching transistor Q2.
  • a circuit is disclosed in which an anode terminal of a diode D11 is connected to a node connected to the resistor Rh, and a cathode terminal of the diode D11 is connected to the bias power supply unit Vcc.
  • power consumption of the bias power supply Vcc can be increased as a result of reducing unnecessary power consumption when D5 is a zener diode.
  • FIG. 11 shows a ninth embodiment in which a temperature change compensation circuit is additionally applied to the potential-current conversion constant current control circuit 26 in the switching power supply circuit for the LED lighting device according to the present invention.
  • the potential-current is provided after voltage division circuits R21 to R22 are provided from the bias power supply unit Vcc through a series connection circuit of a resistor and at least one anode terminal of the temperature compensation diode D16 is connected from the voltage division circuit.
  • the base terminal of the NPN-type junction transistor Q6 constituting the constant current circuit portion 30 of the conversion constant current control circuit 26 is connected in series through a resistor R19, and the temperature compensation diode D16 and the series connection resistor are connected to each other.
  • a switching power supply circuit for a light emitting diode (LED) lighting device is characterized in that it acts to increase the supplied bias current.
  • FIG. 12 is a circuit diagram illustrating a tenth embodiment in which a DC power supply such as a battery is applied as an input power supply in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention.
  • the input power is rectified from the AC power supply to receive the input power in a pulsating state without the smoothing capacitor, and is sufficient to be used as a light emitting diode (LED) power supply as well as a battery system.
  • the LCD (LCD) TV (TV) backlight (Back Light) system has the advantage that can be applied to low cost. Therefore, such a system is mainly used to rectify the AC power through a general AC power source or a generator, the DC power that went through a smoothing process, the technology according to the present invention can be effectively applied.
  • FIG. 13 is a circuit diagram of an eleventh embodiment to which a power efficiency improving circuit is applied in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention, and a resistor Rh for providing hysteresis characteristics.
  • a switching power supply circuit for a light emitting diode (LED) lighting device characterized in that a capacitor (Ch) is connected in series. Due to the insertion of the series connection capacitor Ch on the positive feedback loop, the value of the resistor Rh can be set to a relatively small capacitance value, and the result is a bias supply circuit of the base terminal of the switching transistor Q2.
  • the positive feedback loop current value supplied to (23) is instantaneously increased, resulting in an effect of rapidly improving the overall circuit circuit operation speed, which is consumed during the switching operation of the semiconductor switching element Q1.
  • the reduced power consumption has the advantage of increasing the overall power efficiency of the switching power supply circuit system for a light emitting diode (LED) lighting device according to the present invention.
  • FIG. 14 is a circuit diagram illustrating a twelfth embodiment for compensating optical output flickering of a light emitting diode (LED) light load in a switching power supply circuit for a light emitting diode (LED) lighting device according to the present invention.
  • LED An embodiment in which the capacitor C91 is provided in parallel with the lighting loads LED11 to LED1n is shown.
  • the capacitor C91 is provided in parallel with the lighting loads LED11 to LED1n is shown.
  • the diode D91 is provided in series with the resistor R8 of the current detector 91 in FIG. 14, through which the base operating voltage variation of the junction transistor Q2 and the forward direction of the current detection diode D6 are changed. It is possible to compensate for voltage fluctuations, so that stable operation characteristics can be expected due to temperature changes in a circuit.
  • FIG. 15 is a circuit diagram illustrating a thirteenth embodiment for providing power factor and Total Harmonic Distortion (THD) improvement function in a switching power supply circuit for an LED lighting device according to the present invention.
  • (3) a three-stage circuit of a potential dividing circuit 93, a potential-current conversion bias circuit 94, and a constant current sink circuit 95 to form a junction transistor for ON-OFF switching control of the semiconductor switching element.
  • a power factor and total harmonic distortion (THD) compensator 92 is provided, which is provided to a bias supply circuit of a base terminal.
  • FIG. 16 is a circuit diagram showing a fourteenth embodiment in a switching power supply circuit for a light emitting diode (LED) lighting apparatus according to the present invention, and shows initial power from the anode main power supply terminal (Vd) to the bias circuit (24).
  • An embodiment in which a circuit of a charge pump charging diode D1 and a charge pump discharge diode D2 is inserted between a resistor R1 and a capacitor C1 for supplying is shown. This has the effect of reducing the number of circuit-connected nodes, thereby reducing the number of pins in the package when fabricating an integrated circuit (IC).
  • IC integrated circuit
  • a switching power supply circuit for a light emitting diode (LED) lighting device is produced from office lighting equipment, for office use and production. It can be used in all places where single-phase AC 110V to 220V can be supplied, from factory lighting equipment to street lamps, and LCD TVs using LED backlights.
  • the present invention provides a lighting device device having high power efficiency, long life, and easy installation at low manufacturing cost in various fields including a battery-powered vehicle light emitting diode (LED) lighting device.

Landscapes

  • Circuit Arrangement For Electric Light Sources In General (AREA)

Abstract

La présente invention concerne un circuit de dispositif d'alimentation à découpage destiné à alimenter un équipement d'éclairage à diode électroluminescente (DEL). Plus particulièrement, dans le circuit de dispositif d'alimentation à découpage pour équipement d'éclairage à DEL, un condensateur de lissage de redresseur utilisé dans l'état de la technique apparenté est éliminé, et ainsi une sortie redressée présentant un courant ondulé ou une alimentation en courant continu de la batterie est utilisée telle quelle en tant que Vd de borne principale d'anode. Un circuit d'alimentation à découpage à hacheur dévolteur comprend : un circuit qui combine une diode de détection de courant D6, un condensateur de charge/décharge à détection de courant (C3), et une résistance (Rh) assurant des caractéristiques d'hystérésis avec une résistance (R8) d'unité de détection de courant (91) pour détecter le courant maximal circulant dans une charge d'éclairage (22) de diode électroluminescente (DEL) ; et le circuit de polarisation de base d'un transistor à jonctions bipolaires (BJT, Q2). Le circuit selon l'invention est un circuit de dispositif d'alimentation à découpage de haute efficacité pour équipement d'éclairage à DEL qui permet d'obtenir une performance excellente au moyen d'un circuit relativement simple.
PCT/KR2013/003336 2012-04-20 2013-04-19 Circuit de dispositif d'alimentation à découpage pour équipement d'éclairage à diode électroluminescente WO2013157884A1 (fr)

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KR10-2012-0041254 2012-04-20
KR1020120041254A KR101365307B1 (ko) 2012-04-20 2012-04-20 발광다이오드 조명 기기를 위한 스위칭 전원 공급 장치 회로

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Cited By (1)

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WO2016122182A1 (fr) * 2015-01-30 2016-08-04 주식회사 실리콘웍스 Circuit de commande pour appareil d'éclairage à diodes électroluminescentes et son procédé de commande

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KR101487321B1 (ko) * 2014-03-13 2015-02-04 주식회사 이티스 엘이디 가로등 조도 자동 조절장치
KR101655343B1 (ko) * 2015-10-29 2016-09-08 레이져라이팅(주) 전원 리플 제거 장치
KR101674501B1 (ko) * 2016-07-26 2016-11-09 (주)아크로 발광 다이오드 조명 장치
KR101850609B1 (ko) * 2016-07-28 2018-04-19 최현배 Led 조명램프제어장치

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JP2002231470A (ja) * 2001-02-05 2002-08-16 Pioneer Electronic Corp 発光ダイオード駆動回路
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KR20090015609A (ko) * 2007-08-09 2009-02-12 엘지이노텍 주식회사 엘이디 구동 회로
JP2010016350A (ja) * 2008-06-30 2010-01-21 Green Solution Technology Inc トランジスタスイッチモジュール及びこれを利用した発光ダイオード駆動回路

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KR20080079775A (ko) * 2007-02-28 2008-09-02 엘지이노텍 주식회사 엘이디 백라이트 구동회로
KR20090015609A (ko) * 2007-08-09 2009-02-12 엘지이노텍 주식회사 엘이디 구동 회로
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WO2016122182A1 (fr) * 2015-01-30 2016-08-04 주식회사 실리콘웍스 Circuit de commande pour appareil d'éclairage à diodes électroluminescentes et son procédé de commande
US10271397B2 (en) 2015-01-30 2019-04-23 Silicon Works Co., Ltd. Control circuit and method of LED lighting apparatus

Also Published As

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KR20130118426A (ko) 2013-10-30
KR101365307B1 (ko) 2014-02-19

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