WO2013156328A3 - Mask for lithographic apparatus and methods of inspection - Google Patents

Mask for lithographic apparatus and methods of inspection Download PDF

Info

Publication number
WO2013156328A3
WO2013156328A3 PCT/EP2013/057235 EP2013057235W WO2013156328A3 WO 2013156328 A3 WO2013156328 A3 WO 2013156328A3 EP 2013057235 W EP2013057235 W EP 2013057235W WO 2013156328 A3 WO2013156328 A3 WO 2013156328A3
Authority
WO
WIPO (PCT)
Prior art keywords
top surface
mask
reflective
inspection
substrate
Prior art date
Application number
PCT/EP2013/057235
Other languages
French (fr)
Other versions
WO2013156328A2 (en
Inventor
Pedro Julian RIZO DIAGO
Original Assignee
Asml Netherlands B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Publication of WO2013156328A2 publication Critical patent/WO2013156328A2/en
Publication of WO2013156328A3 publication Critical patent/WO2013156328A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

A mask for use in a lithographic apparatus comprises a substrate, a reflective first multilayer structure deposited on the substrate, a pattern formed in the multilayer reflective structure either by depositing absorber material or by local deformation of the reflective structure, the top surface of the pattern being generally at the same height from the substrate as the top surface of the multilayer structure, and a second structure, preferably a multilayer structure, provided above the top surface of the first reflective structure and the top surface of the pattern, wherein the second structure has a planar top surface and wherein the second structure is chosen so as to minimize the transmission through the second structure of light of a given wavelength at a given angle of incidence and a given polarization such that inspection of the surface of the mask by light scattering can be employed.
PCT/EP2013/057235 2012-04-18 2013-04-05 Mask for lithographic apparatus and methods of inspection WO2013156328A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261625947P 2012-04-18 2012-04-18
US61/625,947 2012-04-18
US201261711430P 2012-10-09 2012-10-09
US61/711,430 2012-10-09

Publications (2)

Publication Number Publication Date
WO2013156328A2 WO2013156328A2 (en) 2013-10-24
WO2013156328A3 true WO2013156328A3 (en) 2013-12-19

Family

ID=49384163

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/057235 WO2013156328A2 (en) 2012-04-18 2013-04-05 Mask for lithographic apparatus and methods of inspection

Country Status (1)

Country Link
WO (1) WO2013156328A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6528287B2 (en) * 2017-06-27 2019-06-12 有限会社サンおきなわ Culture method of microalgae
US20230032950A1 (en) * 2021-07-30 2023-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Euv photo masks and manufacturing method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030013216A1 (en) * 2001-07-13 2003-01-16 Jenspeter Rau EUV reflection mask
US20030027053A1 (en) * 2001-07-31 2003-02-06 Pei-Yang Yan Damascene extreme ultraviolet lithography ( EUVL) photomask and method of making
US20060141370A1 (en) * 2004-12-29 2006-06-29 Kim Suk-Pil Photomasks and methods of manufacturing the same
US20070158636A1 (en) * 2005-12-22 2007-07-12 Intel Corporation Detecting and characterizing mask blank defects using angular distribution of scattered light
US20090263750A1 (en) * 2008-04-17 2009-10-22 Canon Kabushiki Kaisha Foreign particle inspection apparatus, exposure apparatus, and method of manufacturing device
US20120045712A1 (en) * 2010-08-17 2012-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (euv) photomasks, and fabrication methods thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030013216A1 (en) * 2001-07-13 2003-01-16 Jenspeter Rau EUV reflection mask
US20030027053A1 (en) * 2001-07-31 2003-02-06 Pei-Yang Yan Damascene extreme ultraviolet lithography ( EUVL) photomask and method of making
US20060141370A1 (en) * 2004-12-29 2006-06-29 Kim Suk-Pil Photomasks and methods of manufacturing the same
US20070158636A1 (en) * 2005-12-22 2007-07-12 Intel Corporation Detecting and characterizing mask blank defects using angular distribution of scattered light
US20090263750A1 (en) * 2008-04-17 2009-10-22 Canon Kabushiki Kaisha Foreign particle inspection apparatus, exposure apparatus, and method of manufacturing device
US20120045712A1 (en) * 2010-08-17 2012-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (euv) photomasks, and fabrication methods thereof

Also Published As

Publication number Publication date
WO2013156328A2 (en) 2013-10-24

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