WO2013152447A3 - Pulsed semiconductor laser - Google Patents

Pulsed semiconductor laser Download PDF

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Publication number
WO2013152447A3
WO2013152447A3 PCT/CH2013/000058 CH2013000058W WO2013152447A3 WO 2013152447 A3 WO2013152447 A3 WO 2013152447A3 CH 2013000058 W CH2013000058 W CH 2013000058W WO 2013152447 A3 WO2013152447 A3 WO 2013152447A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
laser radiation
radiation
semiconductor gain
gain structure
Prior art date
Application number
PCT/CH2013/000058
Other languages
French (fr)
Other versions
WO2013152447A2 (en
Inventor
Thomas SÜDMEYER
Deran J.H.C. MAAS
Christian Anton ZAUGG
Wolfgang Peter PALLMANN
Martin Hoffmann
Kurt Weingarten
Ursula Keller
Original Assignee
Time-Bandwidth Products Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Time-Bandwidth Products Ag filed Critical Time-Bandwidth Products Ag
Publication of WO2013152447A2 publication Critical patent/WO2013152447A2/en
Publication of WO2013152447A3 publication Critical patent/WO2013152447A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0811—Construction or shape of optical resonators or components thereof comprising three or more reflectors incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)

Abstract

In accordance with an aspect of the invention, a laser for emitting pulsed electromagnetic laser radiation is provided, the laser being a vertical external cavity surface-emitting laser and comprising an optical resonator being defined by a radiation direction arrangement comprising two end reflectors, and the optical resonator defining a laser radiation beam path; the laser further comprising: - an essentially plane semiconductor gain structure having a surface plane for emitting said laser radiation; - pump for exciting said semiconductor gain structure to emit the laser radiation from the surface plane; - a mode locker arranged in the beam path for mode locking the laser radiation; - wherein the radiation direction arrangement is configured to direct the laser radiation on its path from one of the end reflectors to the other one of the end reflectors a plurality of times onto the semiconductor gain structure surface plane to stimulate the emission of the laser radiation from the semiconductor gain structure.
PCT/CH2013/000058 2012-04-11 2013-04-10 Pulsed semiconductor laser WO2013152447A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261622670P 2012-04-11 2012-04-11
US61/622,670 2012-04-11

Publications (2)

Publication Number Publication Date
WO2013152447A2 WO2013152447A2 (en) 2013-10-17
WO2013152447A3 true WO2013152447A3 (en) 2013-11-28

Family

ID=48128032

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2013/000058 WO2013152447A2 (en) 2012-04-11 2013-04-10 Pulsed semiconductor laser

Country Status (1)

Country Link
WO (1) WO2013152447A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2525252B (en) * 2014-04-18 2016-08-17 Solus Tech Ltd Improved passively mode-locking semiconductor disk laser (SDL)
GB2526063B (en) * 2014-04-28 2016-10-26 Solus Tech Ltd Optical amplifier
KR20220024908A (en) * 2019-07-24 2022-03-03 에이에스엠엘 네델란즈 비.브이. radiation source
CN114204397B (en) * 2021-11-19 2024-02-02 华中科技大学 GHz-magnitude ultra-high repetition frequency high-power femtosecond disc laser
DE102022125537A1 (en) 2022-10-04 2024-04-04 Rheinische Friedrich-Wilhelms-Universität Bonn, Körperschaft des öffentlichen Rechts Mirror arrangement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001043242A1 (en) * 1999-12-08 2001-06-14 Time-Bandwidth Products Ag Mode-locked thin-disk laser
US20030058915A1 (en) * 2001-08-09 2003-03-27 Trumpf Laser Gmbh+Co. Kg Laser amplifying system
EP2031712A2 (en) * 2007-08-30 2009-03-04 The Boeing Company Minimizing wavefront errors in resonators with thin disk lasers
WO2013003239A1 (en) * 2011-06-30 2013-01-03 Coherent, Inc. Mode-locked optically pumped semiconductor laser

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11505370A (en) 1995-05-19 1999-05-18 ケレル−ヴアインガルテン，ウルスラ Optical components used preferentially in laser devices that generate pulsed laser beams
US6735234B1 (en) 2000-02-11 2004-05-11 Giga Tera Ag Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001043242A1 (en) * 1999-12-08 2001-06-14 Time-Bandwidth Products Ag Mode-locked thin-disk laser
US20030058915A1 (en) * 2001-08-09 2003-03-27 Trumpf Laser Gmbh+Co. Kg Laser amplifying system
EP2031712A2 (en) * 2007-08-30 2009-03-04 The Boeing Company Minimizing wavefront errors in resonators with thin disk lasers
WO2013003239A1 (en) * 2011-06-30 2013-01-03 Coherent, Inc. Mode-locked optically pumped semiconductor laser

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SAARINEN E J ET AL: "Power-scalable 1.57 mumu mode-locked semiconductor disk laser using wafer fusion", OPTICS LETTERS, THE OPTICAL SOCIETY, vol. 34, no. 20, 15 October 2009 (2009-10-15), pages 3139 - 3141, XP001549149, ISSN: 0146-9592, DOI: 10.1364/OL.34.003139 *
ZAUGG C A ET AL: "257 MHz pulse repetition rate from a modelocked VECSEL", LASERS AND ELECTRO-OPTICS (CLEO), 2012 CONFERENCE ON, IEEE, 6 May 2012 (2012-05-06), pages 1 - 2, XP032246557, ISBN: 978-1-4673-1839-6 *

Also Published As

Publication number Publication date
WO2013152447A2 (en) 2013-10-17

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